JPH0430132B2 - - Google Patents
Info
- Publication number
- JPH0430132B2 JPH0430132B2 JP57176307A JP17630782A JPH0430132B2 JP H0430132 B2 JPH0430132 B2 JP H0430132B2 JP 57176307 A JP57176307 A JP 57176307A JP 17630782 A JP17630782 A JP 17630782A JP H0430132 B2 JPH0430132 B2 JP H0430132B2
- Authority
- JP
- Japan
- Prior art keywords
- hole
- shadow mask
- etching
- forming
- resistive layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000005530 etching Methods 0.000 claims description 57
- 239000000463 material Substances 0.000 claims description 25
- 229920002120 photoresistant polymer Polymers 0.000 claims description 25
- 238000001035 drying Methods 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 238000010894 electron beam technology Methods 0.000 claims description 8
- 238000005406 washing Methods 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 239000003795 chemical substances by application Substances 0.000 claims description 2
- 239000007787 solid Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 description 17
- 239000007788 liquid Substances 0.000 description 9
- 239000011148 porous material Substances 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- JHWIEAWILPSRMU-UHFFFAOYSA-N 2-methyl-3-pyrimidin-4-ylpropanoic acid Chemical compound OC(=O)C(C)CC1=CC=NC=N1 JHWIEAWILPSRMU-UHFFFAOYSA-N 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- JOSWYUNQBRPBDN-UHFFFAOYSA-P ammonium dichromate Chemical compound [NH4+].[NH4+].[O-][Cr](=O)(=O)O[Cr]([O-])(=O)=O JOSWYUNQBRPBDN-UHFFFAOYSA-P 0.000 description 1
- -1 azide compound Chemical class 0.000 description 1
- 239000005018 casein Substances 0.000 description 1
- BECPQYXYKAMYBN-UHFFFAOYSA-N casein, tech. Chemical compound NCCCCC(C(O)=O)N=C(O)C(CC(O)=O)N=C(O)C(CCC(O)=N)N=C(O)C(CC(C)C)N=C(O)C(CCC(O)=O)N=C(O)C(CC(O)=O)N=C(O)C(CCC(O)=O)N=C(O)C(C(C)O)N=C(O)C(CCC(O)=N)N=C(O)C(CCC(O)=N)N=C(O)C(CCC(O)=N)N=C(O)C(CCC(O)=O)N=C(O)C(CCC(O)=O)N=C(O)C(COP(O)(O)=O)N=C(O)C(CCC(O)=N)N=C(O)C(N)CC1=CC=CC=C1 BECPQYXYKAMYBN-UHFFFAOYSA-N 0.000 description 1
- 235000021240 caseins Nutrition 0.000 description 1
- 239000011280 coal tar Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 125000000664 diazo group Chemical group [N-]=[N+]=[*] 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000004922 lacquer Substances 0.000 description 1
- 235000013336 milk Nutrition 0.000 description 1
- 239000008267 milk Substances 0.000 description 1
- 210000004080 milk Anatomy 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000012188 paraffin wax Substances 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/14—Manufacture of electrodes or electrode systems of non-emitting electrodes
- H01J9/142—Manufacture of electrodes or electrode systems of non-emitting electrodes of shadow-masks for colour television tubes
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- ing And Chemical Polishing (AREA)
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明はカラーブラウン管に使用されるシヤド
ウマスクの製造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a method for manufacturing a shadow mask used in a color cathode ray tube.
カラーブラウン管に使用されるシヤドウマスク
は主として写真製版法によつて製造される。その
写真製版法を大別すると、シヤドウマスク素材の
両主面に感光液を塗布する感光液塗布工程、この
感光液を成膜化して感光膜とする乾燥工程、この
感光膜上に大孔用ネガパターン、小孔用ネガパタ
ーンを有するネガ原板を密着して露光する露光工
程、未露光部を除去する現像工程、残存した感光
部の耐エツチング性及びシヤドウマスク素材との
密着性を向上させ、エツチング液による分解剥離
を防止するためのベーキング工程及びエツチング
工程などから構成されている。
Shadow masks used in color cathode ray tubes are mainly manufactured by photolithography. The photolithography method can be roughly divided into a photosensitive liquid coating process in which a photosensitive liquid is applied to both main surfaces of the shadow mask material, a drying process in which this photosensitive liquid is formed into a film and a photosensitive film, and a large hole negative is applied on this photosensitive film. An exposure process in which a negative original plate having a negative pattern for small holes is closely exposed to light, a development process in which unexposed areas are removed, the etching resistance of the remaining exposed areas and adhesion with the shadow mask material are improved, and an etching solution is The process consists of a baking process and an etching process to prevent decomposition and peeling due to oxidation.
一方、カラーブラウン管は一般用、モニターや
デイスプレイ用など、その用途が多岐にわたつて
おり、このうち一般用は別として、モニターやデ
イスプレイ用のカラーブラウン管は極めて微細な
画質が要求されるため、これらに使用されるシヤ
ドウマスクの電子ビーム通過孔部は高精度かつ微
細なものが要求されている。 On the other hand, color cathode ray tubes have a wide variety of uses, including general use, monitors and displays, and apart from general use, color cathode ray tubes for monitors and displays require extremely fine image quality, so The electron beam passage hole of the shadow mask used for this purpose is required to be highly precise and minute.
次に本発明のシヤドウマスクの製造方法に最も
近い従来例である特公昭57−26345号公報による
シヤドウマスクの製造方法を第１図乃至第５図に
より説明すると、先ず、第１図のようにシヤドウ
マスク素材１の両主面に感光液を塗布乾燥して感
光膜２を形成したのち、大孔用ネガパターン、小
孔用ネガパターンを有するネガ原版を密接して、
露光したのち現像し、直径d1の小孔形成部と、直
径d2の大孔形成部の感光膜２を除去し、次に第２
図のように両面にエツチング液をスプレイ方法に
より吹きつけ、小孔部３の開口部径がD1になる
まで第１のエツチングを行なう。この場合、大孔
形成部からも所定深さの大孔部４がエツチングさ
れる。次に第３図のように小孔部３内も含めて感
光膜２上にエツチング液の抵抗層６を被着形成す
る。その後、第４図に示すように、主として大孔
部４側よりエツチング液をスプレイ方法により吹
きつけ、小孔部３内に被着形成されたエツチング
液の抵抗層５に達し、かつ小孔部３の開口部径
D1を乱すことがないように大孔部４の開孔部径
がD2になるまで第２のエツチングを行ない、水
洗、乾燥後、エツチング液の抵抗層６及び感光膜
２を除去し、シヤドウマスク素材１の板厚の40％
程度の孔径を有する第５図に示すシヤドウマスク
（実際にはフラツトマスク）を得る。 Next, the method of manufacturing a shadow mask according to Japanese Patent Publication No. 57-26345, which is the closest conventional example to the method of manufacturing a shadow mask of the present invention, will be explained with reference to FIGS. 1 to 5. First, as shown in FIG. After applying a photosensitive liquid to both main surfaces of 1 and drying it to form a photosensitive film 2, a negative master plate having a negative pattern for large holes and a negative pattern for small holes is closely attached.
After exposure, development is performed to remove the photoresist film 2 in the small hole forming area with diameter d 1 and the large hole forming area with diameter d 2 .
As shown in the figure, an etching solution is sprayed onto both sides by a spray method, and the first etching is performed until the opening diameter of the small hole 3 becomes D1 . In this case, the large hole portion 4 is also etched to a predetermined depth from the large hole forming portion. Next, as shown in FIG. 3, a resistive layer 6 of an etching solution is formed on the photoresist film 2, including inside the small holes 3. Thereafter, as shown in FIG. 4, the etching solution is sprayed mainly from the side of the large hole 4, reaching the resistive layer 5 of the etching liquid formed in the small hole 3, and spraying the etching liquid mainly from the side of the large hole 4. 3 opening diameter
A second etching is performed until the opening diameter of the large hole 4 becomes D2 without disturbing D1, and after washing and drying, the resistive layer 6 of the etching solution and the photoresist film 2 are removed. 40% of the thickness of shadow mask material 1
A shadow mask (actually a flat mask) shown in FIG. 5 having a hole diameter of approximately
前記シヤドウマスクの製造方法では、第１のエ
ツチングのおいてシヤドウマスク素材１の両主面
より目的とする深さまでエツチングし、その後、
水洗、乾燥し、次いで小孔部３内も含めて感光膜
２上にエツチング液の抵抗層６を形成している。
In the method for manufacturing a shadow mask, in the first etching, both main surfaces of the shadow mask material 1 are etched to a desired depth, and then,
After washing and drying, a resistive layer 6 of an etching solution is formed on the photoresist film 2 including inside the small holes 3.
しかし、一般の写真製版法では、孔形成部以外
は耐エツチング性を有する感光膜２が形成され、
この感光膜２が通常の露光、現像、乾燥、ベーキ
ング後、エツチング液または水に浸漬されたり、
スプレイされ、その後乾燥して第２のエツチング
を行なつた場合、この感光膜２の耐エツチング液
特性が低下する。つまり、第２のエツチングを行
なつたとき、感光膜２とシヤドウマスク素材１と
の付着力が低下することにより矢印７方向のサイ
ドエツチング量が大きくなることと、感光膜２の
浮きまたは剥離が発生し、孔寸法のばらつきや孔
欠陥を起し易いという問題がある。更のエツチン
グ液または水に浸漬、さらにスプレイを行なつた
のちの乾燥時に感光膜２の収縮が起き、サイドエ
ツチングにより生じた感光膜２のひさし部８の形
状が歪み、結果として孔寸法及び孔形状の不均一
を起し易いという問題もある。 However, in the general photolithography method, the photoresist film 2 is formed which has etching resistance except for the hole forming part.
After the photoresist film 2 is exposed to light, developed, dried, and baked, it is not immersed in an etching solution or water.
If the photoresist film 2 is sprayed, then dried, and then subjected to a second etching, the resistance of the photoresist film 2 to etching liquids deteriorates. In other words, when the second etching is performed, the adhesion between the photoresist film 2 and the shadow mask material 1 decreases, resulting in an increase in the amount of side etching in the direction of the arrow 7, and the lifting or peeling of the photoresist film 2. However, there are problems in that variations in pore size and pore defects are likely to occur. After further immersion in etching solution or water and further spraying, the photoresist film 2 shrinks during drying, and the shape of the eaves 8 of the photoresist film 2 caused by side etching is distorted, resulting in pore size and pore size. There is also the problem that non-uniformity in shape is likely to occur.
本発明は前述した問題点に鑑みなされたもので
あり、シヤドウマスク素材の全面に均一な微細な
電子ビーム通過孔部を形成することが可能なシヤ
ドウマスクの製造方法を提供することを目的とし
ている。
The present invention has been made in view of the above-mentioned problems, and it is an object of the present invention to provide a method for manufacturing a shadow mask that can form uniform fine electron beam passage holes over the entire surface of a shadow mask material.
即ち、本発明はシヤドウマスク素材の両主面に
それぞれ大孔及び小孔形成部を除いた部分に感光
膜を形成する工程と、大孔及び小孔形成部の形成
されたいずれか一方の主面からのみエツチング液
により所望深さの第１の孔部を形成する第１のエ
ツチング工程と、水洗、第１の乾燥を行なつたの
ち第１の孔部内にエツチング液の抵抗層を充実状
態に形成する抵抗層形成工程と、抵抗層を乾燥す
る第２の乾燥を行なつたのち第１の孔部の形成さ
れたシヤドウマスク素材の反対面からエツチング
液により第１の孔部内に形成された抵抗層を露出
させ所望径の電子ビーム通過孔部を形成し得るま
で第２の孔部を形成する第２のエツチング工程
と、エツチング液の抵抗層及び感光膜を除去する
工程とからなり、第１のエツチング工程と抵抗層
形成工程において第１の孔部を形成するシヤドウ
マスク素材の反対面にエツチング液やエツチング
液の抵抗層を形成するときの抵抗剤が回り込まな
いようにシヤドウマスク素材の幅方向の端部を覆
う遮蔽体からなる液密手段を設けてなることを特
徴としている。
That is, the present invention includes a step of forming a photoresist film on both main surfaces of a shadow mask material excluding the large hole and small hole forming portions, and forming a photoresist film on one of the main surfaces where the large hole and small hole forming portion are formed. After a first etching step of forming a first hole of a desired depth using an etching solution, washing with water, and a first drying process, a resistive layer of the etching solution is filled in the first hole. After performing the resistor layer forming step and the second drying of the resistor layer, the resistor formed in the first hole is etched from the opposite side of the shadow mask material where the first hole is formed. The first etching process consists of a second etching process in which the layer is exposed and a second hole is formed until an electron beam passage hole with a desired diameter can be formed; In the etching process and the resistive layer forming process, the edge of the shadow mask material in the width direction is placed on the opposite side of the shadow mask material that forms the first hole so that the etching solution and the resistive agent when forming the resistive layer of the etching solution do not go around. It is characterized by being provided with a liquid-tight means consisting of a shield covering the area.
次に本発明のシヤドウマスクの製造方法を第６
図乃至第１２図により説明する。
Next, the method for manufacturing a shadow mask of the present invention will be explained in the sixth step.
This will be explained with reference to FIGS. 12 to 12.
まず平滑な鉄などの金属板からなるシヤドウマ
スク素材１１の両主面に牛乳カゼインまたはポリ
ビニルアルコールと重クロム酸アンモニウム、重
クロム酸ナトリウム、ジアゾまたはアジド化合物
の少くとも一種とからなる感光液を塗布乾燥し、
感光膜１２を形成したのち、目的とする電子ビー
ム通過孔部を得るために両主面に所定のネガ像を
有するネガ原版を密着し、紫外線などの光源を使
用してネガ像を感光膜１２に焼付ける。次いで温
水などにより未露光未硬化部の感光膜を溶解除去
し、シヤドウマスク素材１１の両主面に直径d3の
小孔形成部及び直径d4の大孔形成部にあたるシヤ
ドウマスク素材１１の金属面を露出させる。即
ち、シヤドウマスク素材１１の両主面に感光膜１
２を小孔形成部及び大孔形成部を除いた部分に形
成する。次にこの感光膜１２の耐エツチング性及
びシヤドウマスク素材１１との密着性を向上させ
てエツチング液による分解、剥離を防止するた
め、ベーキングと呼ばれる高温熱処理を施し、シ
ヤドウマスク部材１０とする（第６図）。 First, a photosensitive liquid consisting of milk casein or polyvinyl alcohol and at least one of ammonium dichromate, sodium dichromate, diazo or azide compound is applied to both main surfaces of the shadow mask material 11 made of a smooth metal plate such as iron and dried. death,
After forming the photoresist film 12, in order to obtain the desired electron beam passage hole, a negative master having a predetermined negative image is brought into close contact with both main surfaces, and a negative image is transferred to the photoresist film 12 using a light source such as ultraviolet light. Burn it on. Next, the photoresist film in the unexposed and uncured areas is dissolved and removed using hot water or the like, and the metal surfaces of the shadow mask material 11 corresponding to the small hole forming part with a diameter d 3 and the large hole forming part with a diameter d 4 are formed on both main surfaces of the shadow mask material 11. expose. That is, the photoresist film 1 is formed on both main surfaces of the shadow mask material 11.
2 is formed in the portion excluding the small hole forming portion and the large hole forming portion. Next, in order to improve the etching resistance of this photoresist film 12 and its adhesion with the shadow mask material 11 and to prevent it from being decomposed and peeled off by the etching solution, it is subjected to high temperature heat treatment called baking to form the shadow mask member 10 (Fig. 6). ).
次に、このシヤドウマスク部材１０を第１１図
に示すエツチング装置の第１のエツチング槽２１
に送り込む。このエツチング装置の第１のエツチ
ング槽２１、続く水洗槽２２、次の乾燥槽２３に
続く抵抗層形成槽２４にはそれぞれ第１２図に示
すようにシヤドウマスク部材１０の幅方向の端部
即ち走行部に当たる側面部にほぼ断面Ｌ字形のエ
ツチングなどの遮蔽体３２が設けられており、第
１のエツチング槽２１に送り込まれたシヤドウマ
スク部材１０はその第１のエツチング槽２１の遮
蔽体３２により大孔形成部側にエツチング液が回
り込まないように液密に遮蔽される。この状態で
第７図に示すように所定径D3、所定深さの小孔
部１３が形成されるまでエツチングを行なう。 Next, this shadow mask member 10 is placed in the first etching bath 21 of the etching apparatus shown in FIG.
send to. As shown in FIG. 12, each of the first etching tank 21, the washing tank 22, the next drying tank 23, and the resistance layer forming tank 24 of this etching apparatus has a widthwise end portion, that is, a running portion, of the shadow mask member 10. A shielding member 32 such as an etching member having a substantially L-shaped cross section is provided on the side surface corresponding to the etching tank, and the shadow mask member 10 sent into the first etching tank 21 is formed with a large hole by the shielding member 32 of the first etching tank 21. It is liquid-tightly shielded to prevent the etching solution from getting around to the side. In this state, etching is performed until a small hole 13 of a predetermined diameter D 3 and a predetermined depth is formed as shown in FIG.
次に水洗槽２２、第１の乾燥槽２３を通過させ
たのち、抵抗層形成槽２４内でノズル２４ａから
小孔部１３を含む感光膜１２にパラフイン、コー
ルタール、ラツカーなどのエツチング液の抵抗剤
をスプレイし、第８図に示すように小孔部１３内
に充実状態に抵抗層１６を形成する。 Next, after passing through a water washing tank 22 and a first drying tank 23, an etching solution such as paraffin, coal tar, lacquer, etc. The resistive layer 16 is sprayed to form a solid resistive layer 16 inside the small hole 13 as shown in FIG.
次に第２の乾燥槽２５により抵抗層を乾燥させ
る。その後、第２のエツチング槽２６において、
ノズル２６ａからエツチング液を吹き付け、第９
図に示すように直径D4を有し、抵抗層１６を露
出して所望径の電子ビーム通過孔部を形成し得る
大孔部１４が形成されるまでエツチングを行な
う。最後に抵抗層１６、感光膜１２を除去し、第
１０図のようなフラツトマスク１１1を形成する。 Next, the resistance layer is dried in the second drying tank 25. After that, in the second etching tank 26,
The etching liquid is sprayed from the nozzle 26a, and the ninth
As shown in the figure, etching is performed until a large hole 14 having a diameter D 4 and capable of exposing the resistive layer 16 and forming an electron beam passage hole of a desired diameter is formed. Finally, the resistive layer 16 and photoresist film 12 are removed to form a flat mask 111 as shown in FIG.
本実施例のシヤドウマスクの製造方法によれ
ば、シヤドウマスク素材１１の板厚の半分以下の
寸法を有する電子ビーム通過孔部も容易に形成で
きる。また感光膜１２のシヤドウマスク素材１１
への付着が強固となり、かつ歪がないため、孔寸
法や孔形状のばらつきのないシヤドウマスクを得
ることができる。 According to the method of manufacturing a shadow mask of this embodiment, it is possible to easily form an electron beam passage hole having a dimension that is less than half the thickness of the shadow mask material 11. Also, the shadow mask material 11 of the photoresist film 12
Since the adhesion is strong and there is no distortion, it is possible to obtain a shadow mask with no variation in hole size or hole shape.
なお遮蔽体３２1としては、第１３図に示すよ
うに断面Ｕ字状にして更に液密効果を上げた遮蔽
体３２2や、第１４図に示すように内部にローラ
３３を内装し、液密効果を上げると共にシヤドウ
マスク部材１０の送りを良好にしたものなどが用
いられる。 The shielding body 32 1 may be a shielding body 32 2 which has a U-shaped cross section to further improve the liquid-tight effect as shown in FIG. A material that improves the density effect and allows for good feeding of the shadow mask member 10 is used.
なお前記実施例では小孔部側に抵抗層を形成し
たが、これは先に大孔部を形成し、大孔部側に抵
抗層を形成してもよいことは勿論である。 In the above embodiment, the resistance layer was formed on the side of the small hole, but it goes without saying that the large hole may be formed first, and then the resistance layer may be formed on the side of the large hole.
上述のように本発明のシヤドウマスクの製造方
法によれば、感光膜の歪やシヤドウマスク素材か
らの剥離が皆無となり、極めて品位の良好な微細
な電子ビーム通過孔部を形成することが可能であ
り、その工業的価値は極めて大である。
As described above, according to the method of manufacturing a shadow mask of the present invention, there is no distortion of the photoresist film or peeling from the shadow mask material, and it is possible to form fine electron beam passage holes with extremely high quality. Its industrial value is extremely large.
第１図乃至第５図は従来のシヤドウマスクの製
造方法を工程順に示す説明用断面図、第６図乃至
第１２図は本発明のシヤドウマスクの製造方法を
示す図であり、第６図乃至第１０図は製造方法を
工程順に示す説明用断面図、第１１図はエツチン
グ装置の線図、第１２は遮蔽体の説明用斜視図、
第１３図及び第１４図は遮蔽体のそれぞれ異なる
例を示す説明用斜視図である。
１，１１……シヤドウマスク素材、２，１２…
…感光膜、３，１３……小孔、４，１４……大
孔、６，１６……抵抗層、１０……シヤドウマス
ク部材、２１……第１のエツチング槽、２２……
水洗槽、２３……第１の乾燥槽、２４……抵抗層
形成槽、２５……第２の乾燥槽、２６……第２の
エツチング槽、３２1，３２2，３２3……遮蔽体。
1 to 5 are explanatory cross-sectional views showing a conventional method for manufacturing a shadow mask in the order of steps; FIGS. 6 to 12 are diagrams showing a method for manufacturing a shadow mask according to the present invention; The figure is an explanatory cross-sectional view showing the manufacturing method in the order of steps, FIG. 11 is a diagram of the etching device, and No. 12 is an explanatory perspective view of the shield.
FIGS. 13 and 14 are explanatory perspective views showing different examples of the shielding body. 1,11...Shadow mask material, 2,12...
... Photoresist film, 3, 13 ... Small hole, 4, 14 ... Large hole, 6, 16 ... Resistance layer, 10 ... Shadow mask member, 21 ... First etching tank, 22 ...
Washing tank, 23... First drying tank, 24... Resistance layer forming tank, 25... Second drying tank, 26... Second etching tank, 32 1 , 32 2 , 32 3 ... Shielding body .
Claims (1)
及び小孔形成部を除いた部分に感光膜を形成する
工程と、前記大孔及び小孔形成部の形成されたい
ずれか一方の主面からのみエツチング液により所
望深さの第１の孔部を形成する第１のエツチング
工程と、水洗、第１の乾燥を行なつたのち前記第
１の孔部内に前記エツチング液の抵抗層を充実状
態に形成する抵抗層形成工程と、前記抵抗層を乾
燥する第２の乾燥を行なつたのち前記第１の孔部
の形成された前記シヤドウマスク素材の反対面か
らエツチング液により前記第１の孔部内に形成さ
れた前記抵抗層を露出させ所望径の電子ビーム通
過孔部を形成し得るまで第２の孔部を形成する第
２のエツチング工程と、前記エツチング液の抵抗
層及び前記感光膜を除去する工程とからなり、前
記第１のエツチング工程と前記抵抗層形成工程に
おいて前記第１の孔部を形成する前記シヤドウマ
スク素材の反対面にエツチング液や前記エツチン
グ液の抵抗層を形成するときの抵抗剤が回り込ま
ないように前記シヤドウマスク素材の幅方向の端
部を覆う遮蔽体からなる液密手段を設けてなるこ
とを特徴とするシヤドウマスクの製造方法。1. Forming a photoresist film on both main surfaces of the shadow mask material, excluding the large hole and small hole forming portions, and etching only from one of the main surfaces where the large hole and small hole forming portions are formed. After a first etching step of forming a first hole of a desired depth with a solution, washing with water, and a first drying, a resistive layer of the etching solution is formed in the first hole in a solid state. After performing a second drying step of drying the resistive layer, forming a resistive layer in the first hole using an etching solution from the opposite side of the shadow mask material where the first hole is formed. a second etching step of exposing the resistive layer and forming a second hole until an electron beam passing hole having a desired diameter is formed; and a step of removing the resistive layer and the photoresist film using the etching solution. In the first etching step and the resistive layer forming step, an etching solution and a resistive agent used when forming a resistive layer of the etching solution on the opposite side of the shadow mask material forming the first hole are used. A method for producing a shadow mask, characterized in that a liquid-tight means comprising a shielding member is provided to cover the ends in the width direction of the shadow mask material so that the shadow mask material does not go around.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17630782A JPS5968147A (en) | 1982-10-08 | 1982-10-08 | Manufacturing method of shadow mask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17630782A JPS5968147A (en) | 1982-10-08 | 1982-10-08 | Manufacturing method of shadow mask |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5968147A JPS5968147A (en) | 1984-04-18 |
| JPH0430132B2 true JPH0430132B2 (en) | 1992-05-20 |
Family
ID=16011292
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17630782A Granted JPS5968147A (en) | 1982-10-08 | 1982-10-08 | Manufacturing method of shadow mask |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5968147A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6160889A (en) * | 1984-08-30 | 1986-03-28 | Toshiba Corp | Production of shadow mask |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4978478A (en) * | 1972-11-30 | 1974-07-29 | ||
| JPS5726346A (en) * | 1980-07-22 | 1982-02-12 | Kubota Ltd | Hot water feeder |
| JPS57141645A (en) * | 1981-02-25 | 1982-09-02 | Canon Inc | Manufacture of image retaining member |
-
1982
- 1982-10-08 JP JP17630782A patent/JPS5968147A/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4978478A (en) * | 1972-11-30 | 1974-07-29 | ||
| JPS5726346A (en) * | 1980-07-22 | 1982-02-12 | Kubota Ltd | Hot water feeder |
| JPS57141645A (en) * | 1981-02-25 | 1982-09-02 | Canon Inc | Manufacture of image retaining member |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5968147A (en) | 1984-04-18 |
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