JPH04300081A - Cutting method for fuse - Google Patents
Cutting method for fuseInfo
- Publication number
- JPH04300081A JPH04300081A JP3063282A JP6328291A JPH04300081A JP H04300081 A JPH04300081 A JP H04300081A JP 3063282 A JP3063282 A JP 3063282A JP 6328291 A JP6328291 A JP 6328291A JP H04300081 A JPH04300081 A JP H04300081A
- Authority
- JP
- Japan
- Prior art keywords
- fuse
- insulating film
- memory cell
- cut
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000034 method Methods 0.000 title claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 238000007743 anodising Methods 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims description 3
- 230000008018 melting Effects 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 239000004020 conductor Substances 0.000 abstract description 12
- 239000002893 slag Substances 0.000 abstract description 10
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 abstract description 6
- 239000004065 semiconductor Substances 0.000 abstract description 6
- 230000003647 oxidation Effects 0.000 abstract description 4
- 238000007254 oxidation reaction Methods 0.000 abstract description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract description 2
- 235000006408 oxalic acid Nutrition 0.000 abstract description 2
- 229910052697 platinum Inorganic materials 0.000 abstract description 2
- 239000010936 titanium Substances 0.000 abstract description 2
- 229910052719 titanium Inorganic materials 0.000 abstract description 2
- 229910000838 Al alloy Inorganic materials 0.000 abstract 1
- 239000003792 electrolyte Substances 0.000 abstract 1
- 230000002950 deficient Effects 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 238000010586 diagram Methods 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Abstract
Description
【0001】0001
【産業上の利用分野】本発明は半導体メモリのリペア技
術に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to semiconductor memory repair technology.
【0002】0002
【従来の技術】半導体メモリのリペア技術として、従来
から欠陥メモリセルを予備メモリセルに切換えることが
行われている。あらかじめ冗長データ線を通常データ線
に対して並列に設ける。通常データ線が欠陥データ線と
なった場合には、欠陥データ線から冗長データ線に回路
を切換える。この切換方法は、欠陥データ線に直列に接
続されている導体ヒューズにレーザー光を照射して、該
ヒューズを溶断することにより行う。図4(A)は該ヒ
ューズの断面図を示している。図から明かなように、ヒ
ューズは基板1上に設けられた導体配線2と、該配線2
上をおおう絶縁膜3とからなる。該ヒューズを溶断する
ときは、ヒューズ上方からレーザー光を選択的に照射し
、前記絶縁膜及び配線を溶断する。2. Description of the Related Art Conventionally, as a repair technique for semiconductor memory, a defective memory cell is replaced with a spare memory cell. A redundant data line is provided in advance in parallel to the normal data line. When the normal data line becomes a defective data line, the circuit is switched from the defective data line to the redundant data line. This switching method is performed by irradiating a laser beam onto a conductor fuse connected in series to the defective data line to blow the fuse. FIG. 4(A) shows a cross-sectional view of the fuse. As is clear from the figure, the fuse connects the conductor wiring 2 provided on the substrate 1 and the wiring 2.
It consists of an insulating film 3 covering the top. When blowing the fuse, laser light is selectively irradiated from above the fuse to blow the insulating film and wiring.
【0003】0003
【発明が解決しようとする課題】このように欠陥データ
線を直列に接続されたヒューズを切断するには、アルミ
ニウムなどの導電性金属ヒューズをレーザー光で切断す
るが、このとき金属ヒューズを完全に溶断することがで
きなかったり、切断面から溶融して飛散ったヒューズ金
属がその上をおおう絶縁層のガラス質と溶融し合って、
スラグを形成し、このスラグが図4(B)に示すように
切断した配線の間に介在して切断不良となることがあり
、これらがリペアの歩留りを低下させる原因となってい
る。本発明の目的は、このような問題点に鑑み、ヒュー
ズの溶断を確実にし、これによってリペアの歩留りを向
上させることにある。[Problem to be Solved by the Invention] In order to cut fuses connected in series with defective data lines, a conductive metal fuse such as aluminum is cut with a laser beam. Fuse metal that cannot be blown or melts and scatters from the cut surface fuses with the glassy insulating layer that covers it.
A slag is formed, and as shown in FIG. 4(B), this slag may be interposed between the cut wiring lines, resulting in defective cutting, and this is a cause of lowering the repair yield. SUMMARY OF THE INVENTION In view of these problems, it is an object of the present invention to ensure that the fuse blows out, thereby improving the repair yield.
【0004】0004
【課題を解決するための手段】上記課題は、基板上に設
けられた金属配線と、該金属配線をおおう絶縁膜とから
なるヒューズの切断方法であって、該ヒューズに対し選
択的にエネルギー線を照射して、該金属配線及び絶縁膜
を溶融し、該配線を切断する工程と、次に前記溶融によ
って前記絶縁膜にあけられた開口部に露出している金属
配線を陽極酸化する工程を有することを特徴とする、ヒ
ューズの切断方法によって解決することができる。[Means for Solving the Problems] The above object is a method for cutting a fuse consisting of metal wiring provided on a substrate and an insulating film covering the metal wiring, in which energy rays are selectively applied to the fuse. irradiation to melt the metal wiring and insulating film and cutting the wiring, and then anodizing the metal wiring exposed in the opening made in the insulating film by the melting. The problem can be solved by a method for cutting a fuse, which is characterized by having the following characteristics.
【0005】[0005]
【作用】従来のように、ヒューズの金属配線の切断不良
や切断した金属配線間に前記スラグが介在している場合
でも、本発明によれば、そのような切断不良部分やスラ
グは陽極酸化により絶縁化されるので、金属配線の切断
を確実に行うことができ、従ってリペアの歩留りの向上
に寄与する。[Function] Even if, as in the conventional case, there is a defect in cutting the metal wiring of the fuse or the slag is present between the cut metal wiring, according to the present invention, such a defective cutting part and the slag are removed by anodic oxidation. Since it is insulated, the metal wiring can be cut reliably, which contributes to improving the repair yield.
【0006】半導体メモリセルを電解液に浸漬させて、
レーザー光で切断したヒューズを電源の正極に接続して
電解すると、切断面および切断面に一部分が接触したス
ラグは、陽極酸化されて絶縁酸化膜を形成する。これに
よって、不良メモリセルを完全に絶縁することができる
。[0006] By immersing the semiconductor memory cell in an electrolytic solution,
When a fuse cut by a laser beam is connected to the positive electrode of a power source and electrolyzed, the cut surface and the slag partially in contact with the cut surface are anodized to form an insulating oxide film. This makes it possible to completely insulate defective memory cells.
【0007】[0007]
【実施例】図2はヒューズの平面図を示す。ヒューズ導
線2はたとえばアルミニウム、アルミニウム銅合金ある
いはチタンなどからなり、配線6で電極パッド7と接続
している。ヒューズ導線2は、絶縁膜3たとえばPSG
で被覆されている。なお電極パッド7は、ヒューズ切断
後に本発明によって陽極酸化するときの通電に使用する
ので、絶縁膜1では被覆されていない。図2にはヒュー
ズ導線2の切断すべき部分8を示す。DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 2 shows a top view of a fuse. The fuse conductor 2 is made of, for example, aluminum, an aluminum-copper alloy, or titanium, and is connected to the electrode pad 7 through a wiring 6. The fuse conductor 2 is connected to an insulating film 3 such as PSG.
covered with. Note that the electrode pad 7 is not covered with the insulating film 1 because it is used for energization during anodic oxidation according to the present invention after cutting the fuse. FIG. 2 shows the portion 8 of the fuse conductor 2 to be cut.
【0008】図1は本発明のヒューズ絶縁方法の工程図
を示す。図1(A)は図2のヒューズのA−A′線断面
図に相当する。絶縁膜1の上に、ヒューズ導線2を設け
、その上に絶縁膜3を有する。各層の厚みは、例えばヒ
ューズ導線2が約7000Åであり、絶縁膜3が約1μ
mである。常法によって、1.2μJのYAGレーザー
を使用して、ヒューズ導線2の切断すべき部分8を約5
μmのスポットで照射すると、図1(B)に示すように
、まず上層のPSG膜が局部的に溶解し、次にその下の
アルミニウム導線2も溶解してアルミニウム導線2が切
断される。しかしながらこのとき図1(C)のごとくア
ルミニウムとPSGとが混合したスラグ4が切断したア
ルミニウムと導線の間に付着する場合がある。FIG. 1 shows a process diagram of the fuse insulation method of the present invention. FIG. 1A corresponds to a cross-sectional view taken along line A-A' of the fuse in FIG. A fuse conducting wire 2 is provided on an insulating film 1, and an insulating film 3 is provided thereon. For example, the thickness of each layer is approximately 7000 Å for the fuse conductor 2, and approximately 1 μm for the insulating film 3.
It is m. In a conventional manner, using a 1.2 μJ YAG laser, the portion 8 of the fuse conductor 2 to be cut is approximately 5
When irradiated with a μm spot, as shown in FIG. 1B, first the upper PSG film is locally dissolved, and then the aluminum conductive wire 2 underneath is also dissolved, and the aluminum conductive wire 2 is cut. However, at this time, as shown in FIG. 1C, a slag 4 containing a mixture of aluminum and PSG may adhere between the cut aluminum and the conductive wire.
【0009】なお、図3に図1(C)に対応する切断部
分の拡大部分平面図を示す。ヒューズ導体2はクレータ
状に溶解して切断されるが、クレータの周りに溶解した
絶縁膜3のガラス質と混合ってスラグ4を形成する。こ
のスラグ4が左右の金属膜と接続されていない場合は切
断不良が起きないが、図1(B)のごとく凹部からはみ
出して左右の導電膜と接続されている場合は切断不良と
なる。Note that FIG. 3 shows an enlarged partial plan view of the cut portion corresponding to FIG. 1(C). The fuse conductor 2 melts into a crater shape and is cut, but it mixes with the glassy substance of the insulating film 3 melted around the crater to form a slag 4. If this slug 4 is not connected to the left and right metal films, no cutting failure will occur, but if it protrudes from the recess and is connected to the left and right conductive films as shown in FIG. 1(B), a cutting failure will occur.
【0010】次に、本発明によって、このヒューズを含
む半導体メモリセルを温度20℃の2%しゅう酸溶液に
浸漬し、導体ヒューズ2の電極パッド7を12Vの直流
電源の正極に接続し、白金陰極を電極の負極に接続し、
5分間陽極酸化を行った。陽極酸化後のヒューズは図(
C)に示すように、開口部に露出しているアルミニウム
表面およびスラグが酸化された。この酸化部分5は非導
電性であり、回路テストを行った結果、完全に絶縁され
たことが判明した。Next, according to the present invention, the semiconductor memory cell containing this fuse is immersed in a 2% oxalic acid solution at a temperature of 20° C., the electrode pad 7 of the conductive fuse 2 is connected to the positive terminal of a 12 V DC power supply, and the platinum Connect the cathode to the negative pole of the electrode,
Anodic oxidation was performed for 5 minutes. The fuse after anodizing is shown in the figure (
As shown in C), the aluminum surface and slag exposed in the opening were oxidized. This oxidized portion 5 is non-conductive, and circuit tests have shown that it is completely insulated.
【0011】[0011]
【発明の効果】本発明によれば、レーザー光を用いて切
断したヒューズを完全に絶縁することができる。According to the present invention, a fuse cut using laser light can be completely insulated.
【図1】本発明のヒューズの切断方法の工程図である。FIG. 1 is a process diagram of a method for cutting a fuse according to the present invention.
【図2】ヒューズの平面図である。FIG. 2 is a plan view of the fuse.
【図3】切断したヒューズの拡大部分平面図である。FIG. 3 is an enlarged partial plan view of a blown fuse.
【図4】図2のヒューズのA−A′線断面図であり、(
A)は切断前、(B)は切断後の断面を示す。FIG. 4 is a sectional view taken along line A-A' of the fuse in FIG.
A) shows the cross section before cutting, and (B) shows the cross section after cutting.
1,3…絶縁膜 2…ヒューズ導線 4…スラグ 5…陽極酸化部分 6…配線 7…電極パッド 8…切断すべき部分 1, 3...Insulating film 2...Fuse conductor wire 4...Slag 5...Anodized part 6...Wiring 7...Electrode pad 8... Part to be cut
Claims (1)
属配線をおおう絶縁膜とからなるヒューズの切断方法で
あって、該ヒューズに対し選択的にエネルギー線を照射
して、該金属配線及び絶縁膜を溶融し、該配線を切断す
る工程と、次に前記溶融によって前記絶縁膜にあけられ
た開口部に露出している金属配線を陽極酸化する工程を
有することを特徴とするヒューズの切断方法。1. A method for cutting a fuse consisting of a metal wiring provided on a substrate and an insulating film covering the metal wiring, the method comprising: selectively irradiating the fuse with an energy beam; and a step of melting the insulating film and cutting the wiring, and then anodizing the metal wiring exposed in the opening made in the insulating film by the melting. Cutting method.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3063282A JPH04300081A (en) | 1991-03-27 | 1991-03-27 | Cutting method for fuse |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3063282A JPH04300081A (en) | 1991-03-27 | 1991-03-27 | Cutting method for fuse |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH04300081A true JPH04300081A (en) | 1992-10-23 |
Family
ID=13224817
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3063282A Withdrawn JPH04300081A (en) | 1991-03-27 | 1991-03-27 | Cutting method for fuse |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH04300081A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6255144B1 (en) | 1998-06-10 | 2001-07-03 | Hyundai Electronics Industries, Co., Ltd. | Repairing fuse for semiconductor device and method for fabricating the same |
KR100855832B1 (en) * | 2002-07-18 | 2008-09-01 | 주식회사 하이닉스반도체 | Repairing method of semiconductor device |
US7534752B2 (en) * | 1996-07-03 | 2009-05-19 | Advanced Technology Materials, Inc. | Post plasma ashing wafer cleaning formulation |
CN104551394A (en) * | 2013-10-22 | 2015-04-29 | 昆山杰士德精密工业有限公司 | Full-automatic laser welding device for battery production |
-
1991
- 1991-03-27 JP JP3063282A patent/JPH04300081A/en not_active Withdrawn
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7534752B2 (en) * | 1996-07-03 | 2009-05-19 | Advanced Technology Materials, Inc. | Post plasma ashing wafer cleaning formulation |
US6255144B1 (en) | 1998-06-10 | 2001-07-03 | Hyundai Electronics Industries, Co., Ltd. | Repairing fuse for semiconductor device and method for fabricating the same |
KR100855832B1 (en) * | 2002-07-18 | 2008-09-01 | 주식회사 하이닉스반도체 | Repairing method of semiconductor device |
CN104551394A (en) * | 2013-10-22 | 2015-04-29 | 昆山杰士德精密工业有限公司 | Full-automatic laser welding device for battery production |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A300 | Application deemed to be withdrawn because no request for examination was validly filed |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 19980514 |