JPH04294043A - Charge-up control device for ion implanting machine - Google Patents

Abstract

PURPOSE:To prevent charging-up uniformly over the whole surface of a base board to be ion implanted. CONSTITUTION:A charge-up control device for an ion implanting machine a which is low energy electron generating device 2 is installed in such a way as surrounding the ion beam 5. Thereby electrons with the same energy can be supplied evenly to the whole surface of the base board 1, and its charging-up is controlled uniformly and prevented.

Description

[Detailed description of the invention]

0001

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a charge-up control device for an ion implanter that prevents a substrate into which ions are implanted from being destroyed due to charge-up during ion implantation.

0002

2. Description of the Related Art A conventional charge-up control device for an ion implanter will be described below. FIG. 3 is a perspective view of a conventional charge-up control device for an ion implanter. In FIG. 3, 11 is a substrate typified by a semiconductor wafer, 12 is a low-energy electron generation mechanism, 13 is a negative voltage application electrode, and 1
4 is an electrode with a built-in magnet, 15 is an ion beam, and 16 is a low energy electron.

The operation of the charge-up control device for an ion implanter constructed as described above will be explained below. Low-energy electrons 16 generated for charge-up control are bent toward the substrate 11 by the magnetic field, electric field, ion beam 15, etc. near the substrate, and are supplied to the substrate 11, which is undergoing charge-up, to the surface of the substrate 11. Neutralize the charge and increase the charge on board 1
Prevent the destruction of 1.

0004

[Problems to be Solved by the Invention] However, in the above-mentioned conventional configuration, the force due to the magnetic field, electric field, etc. applied to the electron 16 is constant, but since the electron 16 has an energy distribution, the energy of the electron 16 causes the force to be The problem is that the trajectories are different, and as a result, the distribution becomes uneven locally on the substrate 11.

The present invention solves the above-mentioned conventional problems, and aims to uniformly control charge-up on a substrate into which ions are implanted.

[0006]

[Means for Solving the Problems] In order to achieve this object, a charge-up control device for an ion implanter according to the present invention has the following features:
It has a configuration in which a low-energy electron generation mechanism is provided surrounding the ion beam near the substrate into which ions are implanted.

[0007]

[Operation] With this configuration, electrons having the same average energy can be supplied to all locations on the surface of the substrate, and charge-up of the substrate can be uniformly controlled.

[0008]

DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is a perspective view of a charge-up control device for an ion implanter according to a first embodiment of the present invention. In FIG. 1, 1 is a substrate represented by a semiconductor wafer, 2 is a low-energy electron generation mechanism, 2a to 2d are low-energy electron generators, 3 is a negative voltage application electrode, 4 is an electrode with a built-in magnet, 5 is an ion beam, 6 is a low energy electron. By surrounding the ion beam 5 with the four low-energy electron generators 2a to 2d in this manner, electrons 6 having approximately the same energy can be uniformly supplied onto the surface of the substrate 1. In addition, in the first embodiment shown in FIG. 1, an example was shown in which the low-energy electron generation mechanism 2 was configured with four low-energy generators 2a to 2d, but it can be further divided into four or more low-energy generators. Even more effects can be obtained by configuring it with a container.

FIG. 2 is a perspective view of a charge-up control device for an ion implanter according to a second embodiment of the present invention. Note that in FIG. 2, the same parts as in the first embodiment shown in FIG. 1 are denoted by the same reference numerals, and detailed explanations are omitted. The second embodiment shown in FIG. 2 differs from the first embodiment in a low energy generation mechanism 7. In the second embodiment, the low energy generation mechanism 7 has an annular shape, and can supply low energy electrons 6 more uniformly over the entire surface of the substrate 1.

0010

As described above, the present invention provides a low-energy electron generation mechanism that includes a plurality of or annular low-energy generators surrounding an ion beam.
It is possible to realize an excellent charge-up control device for an ion implanter that can uniformly control the charge-up of the substrate by supplying electrons with the same average energy to all locations on the surface of the substrate.

[Brief explanation of drawings]

FIG. 1 is a perspective view of a charge-up control device for an ion implanter in a first embodiment of the present invention.

FIG. 2 is a perspective view of a charge-up control device for an ion implanter according to a second embodiment of the present invention.

[Figure 3] Perspective view of a conventional ion implanter charge-up control device

[Explanation of symbols]

1 Board 2 Low energy electron generation mechanism 5 Ion beam

Claims (3)

[Claims] 1. A charge-up control device for an ion implanter, which includes a low-energy electron generation mechanism surrounding an ion beam near a substrate into which ions are implanted. 2. The charge-up control device for an ion implanter according to claim 1, wherein the low-energy electron generation mechanism comprises a plurality of low-energy electron generators. 3. The charge-up control device for an ion implanter according to claim 1, wherein the low-energy electron generation mechanism comprises a circular low-energy electron generator.