JPH0429359A - Semiconductor device - Google Patents

Abstract

PURPOSE:To enable transmission property of a light with a desired wavelength to be improved by constituting a light-transmission member which covers a light- transmission member which covers a light-emitting part of a memory element and a synthetic resin which does not allow light to be transmitted which is filled with and hardened by potting for forming the memory element and a frame body which becomes a package for the memory element in one piece. CONSTITUTION:A glass plate 2 is closely adhered to a light-receiving surface of a memory element 3, a black epoxy resin 4 and a frame body 5 of the glass plate 2 are formed in one piece, and the entire body forms a package, thus enabling light to be emitted onto the memory element 3 from a part other than the glass plate 2 when performing packaging operation as well as after packaging to be screened completely. When packaging in a bright room, an undesirable erasure can be completely prevented due to leakage light by screening the glass plate 2 with a tape after packaging, thus enabling reliability of a product to be improved. Also, since the glass plate 2 with improved transmission of ultraviolet rays is used, deletion by an eraser can be performed efficiently, thus enabling transmission property of light with a desired wavelength to be improved.

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention is applicable to EPROM (Erasable Programmer)
Regarding semiconductor devices such as amarable ROM),
More specifically, the present invention relates to a package structure suitable for this type of semiconductor device.

[Prior Art] Semiconductor devices such as the EPROM have been packaged using ceramics with excellent moisture resistance. but,
As demand increases, usage patterns become more diverse, and there is a growing demand for smaller and lighter products.

Therefore, in order to meet the above-mentioned demands, and also due to cost considerations, there is a trend toward plastic packaging instead of ceramic packaging.

However, when plastic packaging a semiconductor device that requires a light transmitting part, such as an EPROM, it is necessary to solve unique problems different from those of general semiconductor devices.

[Problems to be Solved by the Invention] That is, since EPROM erases electrically written information by irradiation with light such as ultraviolet rays, the light irradiation part is packaged with a light-transmitting member such as glass. . To prevent the program from being erased by light irradiation after programming, for example, when mounting in a brightly lit room, a piece of tape was placed over the light irradiation area to cover the eyes.

Therefore, in order to replace a ceramic package with a plastic package, the structure other than the light irradiation part should be made to have excellent light slow closing properties, and a material should be selected that has excellent light slow closing properties.
It is necessary to prevent unwanted erasure due to leaked light.

Incidentally, image sensors and the like are semiconductor devices that require light transmission, and are packaged in plastic for reasons such as cost reduction. However, since the image sensor is installed in the imaging system so as to be shielded from unnecessary external light, and the light-receiving section is equipped with a lens system, the plastic package member is molded with a resin that transmits visible light. The reality is that there are.

However, unlike image sensors, EPROMs are used in a wide variety of ways; light leaking from outside the device, light emitted from inside the device, for example from a pylon lamp, etc.
There is a high risk of irradiation with M. For this reason, EPROM
For plastic packaging, it is necessary to particularly improve the light slow closing properties of parts other than the light irradiated parts.

Furthermore, when producing plastic packaging, it is desirable to have a structure that allows for easy production of shapes and sizes that match the usage pattern without using expensive molds.

The present invention has been made in view of the above-mentioned circumstances, and its purpose is to provide a semiconductor which is not only resin-sealed but also has excellent light slow closing properties, and which improves the transparency of light of a desired wavelength in the light irradiation part. The goal is to provide equipment.

[Problems to be Solved by the Invention] The object of the present invention is to replace the light irradiation part of the memory element for erasing electrically written information by light irradiation with a light transmitting member,
For example, a synthetic resin is sealed by UV glass with excellent ultraviolet transmittance, and filled and solidified by potting between a frame formed into a desired shape of synthetic resin and the memory element fixed in this frame. This is achieved by a semiconductor device integrated with resin.

Further, the above object is achieved by applying, for example, a synthetic resin with excellent ultraviolet transmittance as the light transmitting member, and integrating the light transmitting synthetic resin, the memory element, and the frame with the synthetic resin filled and solidified by potting. be done.

[Effect 1] In other words, according to the semiconductor device having the above structure, the irradiation part of the memory element is covered with UV glass or synthetic resin that has excellent ultraviolet transmittance and is suitable for erasing information, so erasing efficiency is improved. .

Furthermore, since the memory element, the light transmitting member, and the frame for fixing the memory element are integrated by a synthetic resin that is filled and solidified by potting, by using a synthetic resin that cannot transmit light, Unnecessary light can be blocked and erroneous erasing can be prevented. Furthermore, it is also possible to improve moisture resistance through integration.

The memory element and frame are integrated using synthetic resin that is filled and solidified by potting, which eliminates the need for expensive molds and reduces production costs. Weight reduction becomes easy.

[Embodiment] An embodiment of a semiconductor device to which the present invention is applied will be described below with reference to the drawings.

Note that Fig. 1 is a perspective view showing the external structure of the semiconductor device, and Fig. 2 is a perspective view showing the external structure of the semiconductor device.
The figure is a partially cutaway plan view, Figure 3 is a sectional view of the main part, and Figure 4 is a cross-sectional view of the main part.
The figure is a perspective view showing the structure of the frame.

The feature of this embodiment is that, for example, for an EPROM, which corresponds to the semiconductor device referred to in the present invention, the frame that becomes a part of the package is molded from thermoplastic synthetic resin, and the light-receiving surface of the memory element disposed in the frame. The glass is closely attached to the glass, and the periphery of the glass, the memory element, and the frame are integrated with a thermosetting resin injected by potting.

In explaining the embodiments, the external structure and internal structure of the EPROMI will be explained, followed by a manufacturing method, and furthermore, ideas for improving moisture resistance, etc. will be explained.

The shape of the EPROMI may be a dual in-line type, which has been widely used in the past, but the structure shown in this embodiment can be easily applied to a configuration other than the dual in-line type.

Therefore, in the embodiments described below, an example of application to a shape known to those skilled in the art as a mini-flat package will be described.

The upper surface of the EPROMI is covered with a glass plate 2 at the center.
It constitutes a light irradiation section that can transmit light.

The lower surface of the glass plate 2 is tightly adhered to the light-receiving surface of a memory element 3, which will be described later, and a part of the lower surface and its vertical surroundings, in other words, most of the rectangular vertical cross section 2a, are covered with thermosetting epoxy resin 4. It's glued. This epoxy resin 4 is colored black or the like to prevent light transmission.

On the other hand, the outer periphery of the EPROMI package is formed in a line with the surface of the glass plate 2 and further with the surface of the epoxy resin 4. The outer periphery of the blood line is a frame body 5 that serves as a package for EPROMI, and consists of an upper package 5a and a lower package 5b. The frame body 5 is also made of synthetic resin colored black to prevent light transmission.

The structure of the frame body 5 will be described in detail later, but it is molded using thermoplastic synthetic resin, and the upper package 5
A large number of glue portions 6, which serve as external connection terminals of the memory element 3, are led out from a substantially central position between the lower package 5b and the lower package 5b. Note that, among those skilled in the art, the leads outside the package are called outer leads, and the leads inside the package are called inner leads, but in this embodiment, for convenience of explanation, they are simply called leads.

Next, the internal structure of the EPROM 1 will be explained with reference to FIGS. 2 and 3.

The lower surface of the memory element 3 is bonded to the tab suspension lead 7 approximately in the center of the package. This bonding is made to be electrically conductive, and the lead 7a of the tab suspension lead 7 is grounded or held at a predetermined potential to ensure stable operation.

Further, each bonding pad 8 of the memory element 3, in other words, the external connection terminal and the tip of each inner lead are connected to the second
As shown in the figure and FIG. 3, they are connected by bonding wires 9.

The glass plate 2 is tightly adhered to the upper part of the memory element 3 fixed in this way, that is, the light receiving surface using a transparent adhesive such as UV resin. This bonding thickness is minute, about 5 to 20 μm, and the two are substantially integrated. As for the glass plate 2, UV glass having excellent UV (ultraviolet) transmittance as shown in the light transmission characteristic a in FIG. 5 is suitable.

However, in addition to the above-mentioned UV glass, glass coated with UV-transparent resin (approximately 10'μm) (light transmission property b)
Furthermore, UV glass coated with a normal UV curable resin (about 10 μm) (light transmission property C) or a normal UV curable resin (light transmission property d) can also be used.

Next, a positioning structure between the memory element 3 and the glass plate 2 will be explained.

As shown in FIGS. 2 and 4, positioning members 10 are provided on the inner wall of the frame 5 at positions facing each other.

A first stepped portion 10 is provided on the tip end surface of each positioning member 10 for fitting and positioning a diagonal corner portion of the memory element 3.
a, a second stepped portion 10b is formed for fitting and positioning the diagonal corner portions of the glass plate 2;

To position the memory element 3, it is sufficient to simply fit the two diagonal corners into the first step portion 10a, and this fitting completely prevents lateral displacement.

Furthermore, the glass plate 2 can be positioned simply by fitting the two diagonal corners to the second step portion 10b. This fitting determines the overlapping position of the glass plate 2 and the memory element 3, and also completely prevents lateral displacement.

When manufacturing EPROMI, lead frame and frame 5
Alignment with Ma automatically and strictly.

be exposed.

Further, the shape and size of the lead frame, the memory element 3 fixed to the lead frame l, and the glass plate 2 positioned on the light-receiving surface of the lead frame are known at the time of design. Therefore, by providing the positioning member 1o in accordance with the shape and size of each member and forming the first and second step portions 10a and 10b, the positional relationship between the lead frame and the glass plate 2 can be adjusted. can be easily determined, and undesirable displacement can be prevented.

The first embodiment of the EPROMI to which the present invention is applied has been described above, and the EFROMI with the above structure has the following notable effects.

That is, the glass plate 2 is tightly adhered to the light-receiving surface of the memory element 3, and the glass plate 2, black epoxy resin 4, and frame 5 are integrated to form a package.

Therefore, not only during the mounting work but also after mounting, it is possible to completely block out light that attempts to irradiate the memory element 3 from sources other than the glass plate 2. When implementing in a bright room,
Even after mounting, by shielding the glass plate 2 with tape, undesired erasure due to leaked light can be completely prevented, improving the reliability of the product. In addition, since the glass plate 2 is made of a material having excellent ultraviolet transmittance as shown in FIG. 5, erasing by the laser can be performed efficiently.

Further, as clearly shown in FIG. 3, there is a step of height h between the upper surface of the frame 5 and the surface of the glass plate 2.

Therefore, even if the EPROMI is placed upside down during mounting, for example, objects are less likely to hit the glass surface and the surface is less likely to be damaged. As a result, cracks in the glass, diffused reflection of light, etc. are reduced, and the reliability of the EPROMI is improved.

Next, a method for manufacturing the EPROM will be explained with reference to FIGS. 6 and 7.

First, the first manufacturing method will be explained with reference to FIG. The materials of each member constituting the EPROMI will be described after the manufacturing method is explained.

In manufacturing EPROMI, as shown in step S1 (the description of the step is omitted below),
The lead frame is placed in a mold (not shown) for forming the frame 5.

Next, as a thermoplastic resin for molding the frame 5, for example, ABS resin, Vectra resin, etc. is injected into the mold.

Then, as shown in S2, the frame body 5 is formed, and then, as shown in S3, the memory element 3 is adhered, that is, bonded, onto the lead frame. This bonding is performed by Ag paste curing.

Next, as shown in S4, wire bonding is performed using, for example, Au wire (gold wire), and further as shown in S5,
Glass plate 2 is bonded to the light-receiving surface of memory element 3 using V-resin.

At this time, the positioning of the memory element 3 and the glass plate 2 is performed as described above.

After the glass plate 2 is bonded, the open lower portion of the frame 5 is closed using the lid 11 as shown in S6.

This closing operation is performed to prevent the thermosetting resin, such as epoxy resin, from flowing out, which will be injected into the frame 5 in the next step.

At the stage where the steps up to S6 are completed, the memory element 3 is arranged in a so-called box-shaped frame 5 in a suspended state.

Then, in S7, the epoxy resin 4 is injected, but this injection is performed by pumping a certain amount of the epoxy resin 4, and no special mold is used.

The epoxy resin 4 at the time of ponting is in a liquid state, and the frame body 5
The hollow space formed between the photoelectric conversion element 3 and the photoelectric conversion element 3 is gradually filled from below. Moreover, since it is liquid,
It penetrates into minute spaces and crevices, and during the penetration, gas does not get mixed into the epoxy resin, and bubbles and the like are not generated.

What should be noted here is that the amount of epoxy resin 4 to be injected can be determined in advance to prevent the epoxy resin 4 from flowing onto the surface of the glass plate 20. That is, as shown in FIG. 3, the injection amount of the epoxy resin 4 is adjusted to such an extent that the epoxy resin 4 adheres to the entire vertical surface around the glass plate 2.

As a result, the memory element 3 is placed on the vertical surface of the glass plate 2 and the lower surface thereof.
All surfaces that are not in contact with the epoxy resin 4 will come into contact with the epoxy resin 4.

Next, it is carried into the furnace, and as shown in S8, for example, 1
The epoxy resin is cured by heating at a temperature of about 50°C.

By this curing, the epoxy resin 4 becomes almost flat without using a mold, and becomes a part of the package that seals the memory element 3.

At this stage, the dam connecting the leads 6 is not cut, and each lead 6 is in a short-circuited state.

Therefore, the dam is cut as shown in S9, and the leading end of the lead is bent (lead forming) in the next step SIO.

The EFROMI completed in this way moves to a testing process as shown in Sll, and is judged to be good or bad through a predetermined inspection.

As is clear from the series of manufacturing steps described above, the epoxy resin 4 that becomes part of the EFROMI package is placed without a mold.

Furthermore, the epoxy resin 4 does not require surface finishing, and only needs to be cured following botting.

As described above, since an expensive mold is not required and the working process can be shortened, working efficiency can be improved and manufacturing costs can be reduced.

Next, a second example of the manufacturing process will be described with reference to FIG.

Incidentally, the same steps as in the first example are given the same step numbers, and the description thereof will be omitted.

The manufacturing steps from Sl to 85 are the same as in the first example.

In S16, instead of attaching the lid 11 in step S6, an epoxy resin coating is applied, and following this step, the product is carried into a furnace and hardened as shown in S17.

Next, a portion corresponding to the lid 11 is molded and assembled, and Vectra resin may be used for this molding.

Thereafter, the EPROM is manufactured through the manufacturing steps 89 to Sll in the same manner as in the first example.

The above manufacturing processes all relate to the manufacturing process of an EPROM made into a mini flat package.

However, there are a wide variety of package structures, and
The EPROM can be configured in a chip carrier package, and the structure and manufacturing method of the present invention can also be applied to the chip carrier package.

FIG. 8 is a cross-sectional view showing an example of an EPROM 20 configured with a chip carrier package.

Reference numeral 21 designates a glass epoxy substrate, in which a memory element 22 is fixed in the center of the recess, and a glass plate 23 having the light transmission characteristics described in the first embodiment is tightly adhered to the light receiving surface thereof in the same manner as described above.

Since the resin retaining frame 24 is attached to the upper part of the blood line outer peripheral part of the epoxy resin 21, the glass epoxy substrate 21
and the resin stopper frame 24 form a so-called box body with an open top.

The space inside the box body is filled with epoxy resin 25 and the resin is solidified.

Next, the manufacturing process of the chip carrier package will be explained with reference to FIG.

The glass epoxy resin 21 is set in S21, and then the memory element 22 is attached as shown in S22, and this attachment is performed using, for example, Ag paste.

Next, wire bonding (S23, not shown) is performed.
), and then the glass plate 23 is bonded as shown in S24.

After that, the frame body 24 is attached in S25,
Furthermore, filling with epoxy resin 25 is performed in S26.

The filling is performed by botting in the same manner as described above, and after a certain amount is filled, it is carried into a furnace and hardened as shown in S27, and then the process moves to testing (32B).

As described above, the package structure and manufacturing method of the present invention can be applied not only to mini-flat packages but also to chip carrier packages.

Here, the materials of each member constituting the EPROMI and 20 will be explained.

The lead frame serving as the lead 6 and the tab hanging lead 7 was made of 42 alloy material with a plate thickness of t=0.15 mm, taking into consideration the package dimensions, the number of lead terminals, etc., and the entire surface was plated with Ag of 4 μm.

Regarding the frame 5, reliability such as dimensional accuracy, heat resistance during the assembly process, solder heat resistance when mounting the EFROMI on a printed wiring board (not shown), coefficient of thermal expansion, mechanical strength, etc. It is necessary to decide on the material taking this into account.

The synthetic resin used to mold the frame 5 and lid 11 in this example was Hectra A-
410, but ABS resin may also be used.

In addition, synthetic resins 4 and 2 are filled using the potting method.
5 used a liquid epoxy resin with good adhesion, but
Silicone resin may also be used.

According to the EPROMI and 20 having the above configuration, the glass plate 2
and No. 23 have excellent ultraviolet transmittance and have high surface hardness, making them less likely to be scratched, resulting in improved cheek quality.

In addition, since the outer periphery of the glass plate 2 and a part of its lower surface are integrated with the epoxy resin 4 having good adhesive properties, it reaches the memory element 3 along the interface between the glass plate 2 and the epoxy resin 4. It becomes difficult to form an intrusion path for moisture and the like. Therefore, it becomes difficult for water and humidity to infiltrate, making it difficult for EPROM
I Improves overall moisture resistance.

By the way, improving moisture resistance is an extremely important issue not only for the EPROM but also for semiconductor devices.

Therefore, in order to further improve moisture resistance, the inventors of the present invention have devised various ideas as described below regarding the material of the synthetic resin serving as the pancage and the package structure.

That is, a desiccant is mixed into the epoxy resin 4.25 which is filled by pouring. The desiccant may be any desiccant as long as it can absorb moisture seeping into the package, such as what is known as silica gel.

Furthermore, by forming a package structure as shown in FIG. 9, moisture resistance can be improved.

That is, in the image sensor 30, the frame 31 is molded from thermoplastic resin such as Hectra resin.

Then, a desiccant layer 32 is formed in the recessed part of the frame 31, in other words, in the inner plane part, and the epoxy resin 33 is filled by botting so as to be laminated on the desiccant layer 32.

Note that the desiccant layer 32 may be made of silica gel in the same manner as described above, and the layer may be formed in either a powdered or solidified state.

The frame body 31 is molded from Hectra resin, which is more susceptible to moisture infiltration than the epoxy resin 33.

However, by forming the desiccant layer 32, when moisture infiltrates from the frame 31, the desiccant layer 32 reduces or prevents further infiltration.

Even if moisture were to infiltrate into the epoxy resin 33, the amount would be significantly reduced, and since the epoxy resin 33 is difficult for moisture to infiltrate, it would be difficult for the moisture to reach the photoelectric conversion element 34.

Note that a glass plate 35 is tightly adhered to the light receiving surface of the memory element 34, as in the previous embodiment, and most of the vertical surface of the outer peripheral portion of the glass plate 35 is adhered to the epoxy resin 33.

Further, the memory element 34 and each lead 36 are wire-bonded as described above.

According to the package structure, moisture infiltrating from the frame 31 is at least reduced by the desiccant layer 32;
Since the epoxy resin 33 is difficult to infiltrate with moisture, the moisture resistance is improved as a whole.

Next, another package structure that enables improved moisture resistance will be described with reference to FIG.

That is, in the image sensor 40, the frame body 41 is molded using Vectra resin or the like.

Then, the inside of the frame 41 is filled with resin that will become a part of the package by botting, and the filling is done in three layers, for example.

The lowermost resin layer 42 and the uppermost resin layer 1i44 are made of a resin that is difficult to infiltrate with water, and the intermediate layer 43 may be a layer that is more easily infiltrated with water than the resin layers 42 and 44. .

As the resin forming the resin layers 42 and 44, for example, epoxy resin, silicone resin, etc. are suitable. Further, as the resin constituting the intermediate layer 43, for example, three-dimensionally crosslinked acrylic resin, epoxy mixed with molecular sheep material such as zeolite, silicone acrylic resin, etc. are suitable. Note that 45 is a memory element, and a glass plate 46 is tightly adhered to the light-receiving surface of the memory element.
7 is wire bonded.

In the EFROM 40 having the package structure, even if water infiltrates from the frame 41, the resin layer 42 reduces the amount of water infiltrated.

On the other hand, the portion of the package surface that comes into contact with the moisture-containing atmosphere is constituted by a resin layer 44, which is difficult for moisture to infiltrate. Moreover, when an epoxy resin is used for the resin layer 44, it has good adhesion to the glass plate 46, so that an intrusion path passing through the interface of the glass plate 46 is less likely to be formed, and these factors combine to improve moisture resistance.

In each of the above embodiments, a glass plate is applied to the light transmitting portion, but as explained about the light transmitting characteristic d, UV
It may also be constructed using a cured resin.

Its structure will be explained with reference to FIG. Note that the configuration other than the light transmitting part is not particularly limited, so the third
The structures, symbols, etc. shown in the figures are used.

That is, as the light transmitting member 100, a UV cured resin formed into a plate shape (about 0.5 mm thick) is used.

In this case, if the UV curing resin is formed into a plate shape in advance,
The same structure as above can be achieved by the same steps as above, and the effects are also the same. Alternatively, the UV curable resin may not be formed into a plate shape, but may be laminated on the memory element 3 in a liquid state and then cured. In this case, the surface of the light-transmitting part is not necessarily flat, and may take the shape shown by the dotted line in Figure 12, but during erasing, ultraviolet rays are consciously irradiated by the eraser, so it is not flat. Information can be deleted even if the

Although the present invention has been described in detail above, the present invention is not limited to the above, and various modifications are possible.

For example, the epoxy resin filled by potting is colored black, but it may be of any other color.

Further, the light transmitting material is not limited to the glass plate, but may be a color filter or a prism, and other optical materials such as quartz, calcite, fluorite, KDP or ADP having an electro-optic effect may also be used. I can do it.

[Effects of the Invention] As explained above, in the semiconductor device according to the present invention, a light transmitting material excellent in transmitting ultraviolet light, such as UV glass or UV curing resin, is closely adhered to the light receiving surface of the memory element, and the memory element is positioned in a frame molded using thermoplastic resin,
Further, the frame body, the memory element, and the light transmitting material are integrated by a thermosetting resin injected by potting.

According to the above configuration, the light transmitting material has excellent UV transmission, and the frame body and thermosetting resin have excellent light slow closing properties, so that information can be reliably erased by UV irradiation, and unnecessary light can be blocked. Therefore, information is not erased unexpectedly and reliability is improved.

In addition, since the thermosetting resin that will become part of the package is injected by pouring, part of the package can be configured into the desired shape without using a mold, which significantly reduces manufacturing costs. It is possible to reduce the size and weight.

Furthermore, since the light-transmitting material is integrated with a thermosetting resin that has excellent adhesive properties, the adhesion at the interface between the light-transmitting material and the thermosetting resin is good, and even though it is resin-sealed, In addition, the infiltration of water and humidity is reduced and moisture resistance is improved.

[Brief explanation of drawings]

Fig. 1 is a perspective view showing the external structure of a semiconductor device to which the present invention is applied, Fig. 2 is a partially cutaway plan view of the semiconductor device, Fig. 3 is a cross-sectional view of the main part, and Fig. 4 is a frame body. A perspective view showing the structure, Figure 5 is a characteristic diagram showing ultraviolet transmission characteristics, Figures 6 and 7
The figure is a manufacturing process diagram of a semiconductor device, Figure 8 is a cross-sectional view showing another example of a semiconductor device, Figure 9 is a diagram of another manufacturing process of a semiconductor device, and Figures 10 and 11 are diagrams for improving moisture resistance. Cross-sectional view of semiconductor device FIG. 12 is a cross-sectional view of a semiconductor device showing another example of a light transmitting member. Codes in the figure; 1.20, 30, 40: EPROM 2.23, 35, 45, 100: light transmitting member 3.22.
34, 45: Memory element 4. 25, 33, 43: Epoxy resin 5. 21, 31, 41: Frame 6: Lead 7: Tab hanging lead 8: Bonding pad 9: Bonding wire 10: Positioning member 10a, 10b: First and second stepped portions 11: M body 32: Desiccant layer 42, 43, 44: Resin layer. Fig. 1 Fig. 4 n Fig. λ (nm) Fig. 6 Fig. 8 Fig. 9

Claims (1)

[Scope of Claims] [1] A memory element that erases electrically written information by light irradiation, a light transmitting member that covers at least a light irradiated portion of the memory element, the light transmitting member, the memory element, and the memory. A semiconductor device made of a synthetic resin that cannot transmit light and is filled and solidified by potting to integrate with a frame that serves as a package for the device. [2] The above-mentioned claim [1], wherein the light transmitting member has a light transmitting property that transmits light of a desired wavelength.
The semiconductor device described. [3] A memory element in which electrically written information is erased by light irradiation, a light transmitting member made of synthetic resin formed in close contact with at least the light irradiated portion of the memory element, and the light transmitting member and the memory. A semiconductor device made of a synthetic resin that cannot transmit light and is filled and solidified by potting to integrate the element and a frame that serves as a package for the memory element.