JPH04288825A - Method of forming heat resistant contact - Google Patents
Method of forming heat resistant contactInfo
- Publication number
- JPH04288825A JPH04288825A JP5271791A JP5271791A JPH04288825A JP H04288825 A JPH04288825 A JP H04288825A JP 5271791 A JP5271791 A JP 5271791A JP 5271791 A JP5271791 A JP 5271791A JP H04288825 A JPH04288825 A JP H04288825A
- Authority
- JP
- Japan
- Prior art keywords
- melting point
- layer
- high melting
- point metal
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title abstract description 21
- 239000010410 layer Substances 0.000 claims abstract description 50
- 229910052751 metal Inorganic materials 0.000 claims abstract description 28
- 239000002184 metal Substances 0.000 claims abstract description 28
- 238000002844 melting Methods 0.000 claims abstract description 23
- 230000008018 melting Effects 0.000 claims abstract description 21
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 15
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 239000011229 interlayer Substances 0.000 claims abstract description 9
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000010703 silicon Substances 0.000 claims abstract description 8
- 150000004767 nitrides Chemical class 0.000 claims abstract description 7
- 239000003870 refractory metal Substances 0.000 claims 4
- 230000004888 barrier function Effects 0.000 abstract description 9
- 229910052721 tungsten Inorganic materials 0.000 abstract description 7
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract description 5
- 239000010937 tungsten Substances 0.000 abstract description 5
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 239000010936 titanium Substances 0.000 description 8
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 229910008486 TiSix Inorganic materials 0.000 description 5
- 229910052681 coesite Inorganic materials 0.000 description 5
- 229910052906 cristobalite Inorganic materials 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 229910052682 stishovite Inorganic materials 0.000 description 5
- 229910021341 titanium silicide Inorganic materials 0.000 description 5
- 229910052905 tridymite Inorganic materials 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910010348 TiF3 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910008814 WSi2 Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は、耐熱性コンタクト形成
方法に係り、特に超ＬＳＩ等のように高集積化を図るた
めに必要な電気抵抗が低い耐熱性コンタクトの形成方法
に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming heat-resistant contacts, and more particularly to a method for forming heat-resistant contacts with low electrical resistance, which is necessary for achieving high integration such as in VLSIs.
【０００２】0002
【従来の技術】サブミクロン以下の寸法の微細化が設計
上必要とされる超ＬＳＩでは、第１層の配線よりも上層
に負荷トランジスタ（Ｔｒ）等を形成することが考えら
れている。このために第１層の配線およびこの配線とそ
の近傍の拡散層とのコンタクトが、少なくともＴｒ形成
のプロセスに耐える耐熱性（例えば９００℃以上）を有
し、しかも電気抵抗が低いことを要する。2. Description of the Related Art In ultra-LSIs whose design requires miniaturization of submicron dimensions or less, it has been considered to form load transistors (Tr) and the like in a layer above the first layer wiring. For this purpose, it is necessary that the first layer wiring and the contact between the wiring and the diffusion layer in the vicinity have heat resistance (for example, 900° C. or higher) that can at least withstand the process of forming the Tr, and have low electrical resistance.
【０００３】0003
【発明が解決しようとする課題】９００℃以上の耐熱性
を有し、電気抵抗が低い配線としては、高融点金属、特
にタングステン（Ｗ）を用いた配線が注目される。しか
し、ＬＳＩプロセスではＷを例えば拡散層のシリコン（
Ｓｉ）に直接被着させると、６００℃以上の熱処理によ
りシリサイド化（ＷＳｉ２）反応を生じ耐熱性コンタク
トが得られない。そこで、Ｗと拡散層との間に窒化チタ
ン（ＴｉＮ）等のバリアメタル層を形成して、ＷとＳｉ
のシリサイド化を防止する方法が考えられている。Problems to be Solved by the Invention As wiring having heat resistance of 900° C. or higher and low electrical resistance, wiring using a high melting point metal, particularly tungsten (W), is attracting attention. However, in the LSI process, W is used, for example, in the silicon of the diffusion layer (
If it is directly deposited on Si), a silicidation (WSi2) reaction occurs due to heat treatment at 600° C. or higher, making it impossible to obtain a heat-resistant contact. Therefore, a barrier metal layer such as titanium nitride (TiN) is formed between W and the diffusion layer to
Methods are being considered to prevent silicide formation.
【０００４】しかしながら、ＴｉＮをＷとＳｉ層に介在
させる方法も以下の如き問題があった。However, the method of interposing TiN between the W and Si layers also has the following problems.
【０００５】第１の問題は、バリアメタルとしてのＴｉ
Ｎは、通常スパッタ法で形成されるために、Ｗ配線用コ
ンタクトホール開口の径が微細化し、なおかつその深さ
が深くなると、図３（ａ）に示すように、ＴｉＮ１２が
Ｓｉ基板１１上のＳｉＯ２層間絶縁膜１７のコンタクト
ホール１３下部では薄く被着し、上部ではオーバーハン
グ（上方になるにしたがって開口部が狭くなる）を形成
し、その後の全面Ｗ１４被着がＴｉＮ１２の被着形成状
態により図３（ｂ）に示すようにコンタクトホール底部
でボイド等の空隙部１５を形成することである。The first problem is that Ti as a barrier metal
Since N is usually formed by a sputtering method, as the diameter of the contact hole opening for W wiring becomes finer and the depth becomes deeper, TiN12 is formed on the Si substrate 11 as shown in FIG. 3(a). The SiO2 interlayer insulating film 17 is thinly deposited at the bottom of the contact hole 13, an overhang is formed at the top (the opening becomes narrower as it goes upward), and the subsequent entire surface W14 is deposited depending on the state of TiN12 deposition. As shown in FIG. 3(b), a void 15 such as a void is formed at the bottom of the contact hole.
【０００６】第２の問題は、ＴｉＮは上記スパッタ法の
他、ＣＶＤ（化学気相成長）法で形成するプロセスが知
られている。しかし、まだ開発の段階であり、例えば塩
素（Ｃｌ）等の不純物をＴｉＮ内に取り込み、要求され
るバリア性を低下させることが課題として残されている
。[0006] The second problem is that, in addition to the above-mentioned sputtering method, a process for forming TiN using a CVD (chemical vapor deposition) method is known. However, it is still in the development stage, and there remains the issue of incorporating impurities such as chlorine (Cl) into TiN and reducing the required barrier properties.
【０００７】本発明は、タングステン（Ｗ）等の高融点
金属と、Ｓｉとのシリサイド化を防止するためのバリア
層を容易に形成しうる耐熱性コンタクトの形成方法を提
供することを目的とする。An object of the present invention is to provide a method for forming a heat-resistant contact that can easily form a barrier layer for preventing silicidation between a high-melting point metal such as tungsten (W) and Si. .
【０００８】[0008]
【課題を解決するための手段】上記課題は本発明によれ
ば、シリコン基板上に自己整合的に高融点金属シリサイ
ド層を形成し、全面に層間絶縁膜を形成し、前記高融点
金属シリサイド層表面の少なくとも１部を露出させるコ
ンタクトホールを前記層間絶縁膜に形成し、前記高融点
金属の窒化物層を前記コンタクトホールの高融点金属シ
リサイド層表面に自己整合的に形成した後、全面に高融
点金属層を配線として形成することを特徴とする耐熱性
コンタクトの形成方法によって解決される。[Means for Solving the Problems] According to the present invention, the above problem is solved by forming a high melting point metal silicide layer on a silicon substrate in a self-aligned manner, forming an interlayer insulating film on the entire surface, and forming the high melting point metal silicide layer on the entire surface. A contact hole exposing at least a portion of the surface is formed in the interlayer insulating film, and the high melting point metal nitride layer is formed in a self-aligned manner on the surface of the high melting point metal silicide layer in the contact hole, and then a high melting point metal nitride layer is formed on the entire surface. The problem is solved by a method for forming a heat-resistant contact, which is characterized by forming a melting point metal layer as a wiring.
【０００９】[0009]
【作用】本発明では、配線形成領域を含むシリコン基板
１全面に、例えばチタン、タングステン等の高融点金属
層を形成した後、所定の熱処理（アニール）を施すこと
によってシリコン基板上の配線形成領域に自己整合的に
、例えばチタンシリサイド（ＴｉＳｉｘ）、タングステ
ンシリサイド（ＷＳｉｘ）等の高融点金属シリサイド層
６を形成することができる。また、本発明ではコンタク
トホール８を形成した後、ＮＨ３等の窒素雰囲気で熱処
理を行なうことによりコンタクトホール８の高融点金属
シリサイド層６表面に自己整合的にＴｉＮ、ＷＮ等の高
融点金属の窒化物層９を形成することができる。更に、
本発明では配線材料としての高融点金属としてＴｉ、Ｗ
等が好ましく、その形成方法はカバレージのよいＣＶＤ
法が好ましい。[Operation] In the present invention, after forming a high-melting point metal layer such as titanium or tungsten on the entire surface of the silicon substrate 1 including the wiring formation area, a predetermined heat treatment (annealing) is performed to form the wiring formation area on the silicon substrate. A high melting point metal silicide layer 6 such as titanium silicide (TiSix) or tungsten silicide (WSix) can be formed in a self-aligned manner. Further, in the present invention, after forming the contact hole 8, heat treatment is performed in a nitrogen atmosphere such as NH3 to nitride a high melting point metal such as TiN or WN in a self-aligned manner on the surface of the high melting point metal silicide layer 6 of the contact hole 8. A material layer 9 can be formed. Furthermore,
In the present invention, Ti and W are used as high melting point metals as wiring materials.
etc., and the forming method is CVD with good coverage.
law is preferred.
【００１０】本発明によれば、コンタクトホール内にバ
リアメタル層として高融点金属窒化物をカバレージよく
容易に形成することができるため配線金属層とシリサイ
ド層との反応を抑制することができ、低抵抗化が図られ
、しかもコンタクトホール内の高融点金属層にはボイド
等の空隙部が発生しない。According to the present invention, since a high melting point metal nitride can be easily formed as a barrier metal layer in a contact hole with good coverage, the reaction between a wiring metal layer and a silicide layer can be suppressed, and a low Resistance is achieved, and voids such as voids are not generated in the high melting point metal layer within the contact hole.
【００１１】[0011]
【実施例】以下、本発明の実施例を図面に基づいて詳細
に説明する。Embodiments Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
【００１２】図１及び図２は本発明の方法の一実施例を
示す工程断面図であり、特に図１は前半工程、図２はそ
の後半の工程を示す。FIGS. 1 and 2 are process cross-sectional views showing one embodiment of the method of the present invention, in particular, FIG. 1 shows the first half of the process, and FIG. 2 shows the second half of the process.
【００１３】まず、図１（ａ）に示すように、通常の工
程によりシリコン（Ｓｉ）基板１上にポリシリコンゲー
ト４を形成する。図中２，３はそれぞれ絶縁酸化膜のＳ
ｉＯ２膜である。ポリシリコンゲート４形成後、全面に
Ｔｉをスパッタにより５００オングストロームの厚さに
被着してＴｉ層５を形成する。First, as shown in FIG. 1(a), a polysilicon gate 4 is formed on a silicon (Si) substrate 1 by a normal process. 2 and 3 in the figure are insulating oxide films, respectively.
It is an iO2 film. After forming the polysilicon gate 4, Ti layer 5 is formed by sputtering Ti to a thickness of 500 angstroms over the entire surface.
【００１４】次に図１（ｂ）に示すように、約８００℃
の温度でアニール処理を行い、シリコンと接する面すな
わち拡散層及びポリシリコンゲート４上のみを選択的に
反応させＴｉをシリサイド化して厚さ約５００オングス
トロームのＴｉＳｉｘ（チタンシリサイド）層６を形成
する。この時ＴｉＳｉｘの最表面は約１００オングスト
ロームのＴｉＮが形成されている。Next, as shown in FIG. 1(b), about 800°C
An annealing treatment is performed at a temperature of 200 nm to selectively react only on the surface in contact with silicon, that is, on the diffusion layer and polysilicon gate 4, to silicide Ti and form a TiSix (titanium silicide) layer 6 with a thickness of about 500 angstroms. At this time, about 100 angstroms of TiN is formed on the outermost surface of TiSix.
【００１５】次に、図１（ｃ）に示すように、Ｔｉ層５
のみをアンモニアと過酸化水素の混合溶液によるウエッ
トエッチングにより除去する。Next, as shown in FIG. 1(c), the Ti layer 5
Only the wafer is removed by wet etching using a mixed solution of ammonia and hydrogen peroxide.
【００１６】更に、図２（ａ）に示すように、全面にＳ
ｉＯ２をＣＶＤ法を用いて８０００オングストロームの
厚さに堆積させＳｉＯ２層間絶縁膜７を形成し、続いて
ＴｉＮ膜９を約１０００オングストロームスパッタによ
り形成する。その後、図２（ｂ）に示すように配線形成
部にコンタクトホール８を形成する。コンタクトホール
８形成時にオーバーエッチングによってＴｉＳｉｘ層６
の表面のＴｉＮ膜９もエッチングされてしまうのでコン
タクトホール８を形成した後、例えばＮＨ３雰囲気中で
８００℃の温度で６０秒間熱処理することにより、Ｔｉ
Ｓｉｘ層６表面にセルフアラインで厚さ約１０００オン
グストロームのＴｉＮ膜９ａを形成する。ＴｉＮ膜９ａ
は主にコンタクト部のバリア層として作用し、ＴｉＮ膜
９は密着層として作用する。Furthermore, as shown in FIG. 2(a), S is applied to the entire surface.
A SiO2 interlayer insulating film 7 is formed by depositing iO2 to a thickness of 8000 angstroms using the CVD method, and then a TiN film 9 is formed by sputtering to a thickness of about 1000 angstroms. Thereafter, as shown in FIG. 2(b), a contact hole 8 is formed in the wiring forming portion. TiSix layer 6 is removed by over-etching when forming contact hole 8.
Since the TiN film 9 on the surface of the TiN film 9 is also etched, after forming the contact hole 8, heat treatment is performed at a temperature of 800° C. for 60 seconds in an NH3 atmosphere.
A TiN film 9a having a thickness of about 1000 angstroms is formed on the surface of the Six layer 6 in a self-aligned manner. TiN film 9a
acts mainly as a barrier layer for the contact portion, and the TiN film 9 acts as an adhesion layer.
【００１７】次に、図２（ｃ）に示すように全面にタン
グステン（Ｗ）をＣＶＤ法を用いて厚さ５０００オング
ストローム（ＳｉＯ２層間絶縁膜７上で）に堆積させる
と同時にコンタクトホール８内に埋め込まれたＷ層１０
を形成する。このＣＶＤ条件は温度４７５℃、圧力８０
Ｔｏｒｒとし、原料ガスＷＦ６、還元性のガスＨ２を用
い、その流量はＷＦ６／Ｈ２を６０／３６０ＳＣＣＭと
した。このようにしてＳｉ基板１上にセルフアラインに
より形成されたチタンシリサイド上にセルフアラインに
よりバリアメタル層としてのＴｉＮ膜を形成した後、耐
熱性のＷ配線が形成される。Next, as shown in FIG. 2C, tungsten (W) is deposited on the entire surface to a thickness of 5000 angstroms (on the SiO2 interlayer insulating film 7) using the CVD method, and at the same time, it is deposited in the contact hole 8. Embedded W layer 10
form. This CVD condition is a temperature of 475℃ and a pressure of 80℃.
Torr, source gas WF6 and reducing gas H2 were used, and the flow rates were WF6/H2 at 60/360 SCCM. After a TiN film as a barrier metal layer is formed by self-alignment on the titanium silicide formed on the Si substrate 1 by self-alignment in this manner, a heat-resistant W wiring is formed.
【００１８】[0018]
【発明の効果】以上説明したように、本発明によれば、
Ｓｉ基板と例えばＷ配線間にセルフアラインにより容易
にバリア層としてのＴｉＮ膜を形成することができ、耐
熱性コンタクトが形成される。しかも、本発明では例え
ばチタンシリサイドとＷＦ６とが直接接触されないため
に絶縁物ＴｉＦ３が形成されず、低抵抗コンタクトが実
現できる。[Effects of the Invention] As explained above, according to the present invention,
A TiN film as a barrier layer can be easily formed between the Si substrate and, for example, W wiring by self-alignment, and a heat-resistant contact is formed. Moreover, in the present invention, for example, titanium silicide and WF6 are not in direct contact, so that insulator TiF3 is not formed, and a low resistance contact can be realized.
【図１】本発明の方法の一実施例における前半の工程断
面図である。FIG. 1 is a cross-sectional view of the first half of an embodiment of the method of the present invention.
【図２】本発明の方法の一実施例における後半の工程断
面図である。FIG. 2 is a cross-sectional view of the latter half of an embodiment of the method of the present invention.
【図３】従来の技術を説明するための工程断面図である
。FIG. 3 is a process sectional view for explaining a conventional technique.
１，１１ Ｓｉ基板
２，３ ＳｉＯ２膜
４ ポリシリコンゲート
５ Ｔｉ層
６ ＴｉＳｉｘ（チタンシリサイド）層７，１７
ＳｉＯ２層間絶縁膜
８，１３ コンタクトホール
９，９ａ ＴｉＮ膜
１０ Ｗ層
１２ ＴｉＮ
１４ Ｗ1, 11 Si substrate 2, 3 SiO2 film 4 Polysilicon gate 5 Ti layer 6 TiSix (titanium silicide) layer 7, 17
SiO2 interlayer insulating film 8, 13 Contact hole 9, 9a TiN film 10 W layer 12 TiN 14 W
Claims (1)
金属シリサイド層を形成し、全面に層間絶縁膜を形成し
、前記高融点金属シリサイド層表面の少なくとも１部を
露出させるコンタクトホールを前記層間絶縁膜に形成し
、前記高融点金属の窒化物層を前記コンタクトホールの
高融点金属シリサイド層表面に自己整合的に形成した後
、全面に高融点金属層を配線として形成することを特徴
とする耐熱性コンタクトの形成方法。1. A high melting point metal silicide layer is formed on a silicon substrate in a self-aligned manner, an interlayer insulating film is formed on the entire surface, and a contact hole is formed between the layers to expose at least a part of the surface of the high melting point metal silicide layer. The nitride layer of the refractory metal is formed on an insulating film, and after the nitride layer of the refractory metal is formed in a self-aligned manner on the surface of the refractory metal silicide layer of the contact hole, the refractory metal layer is formed as a wiring on the entire surface. How to form heat-resistant contacts.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5271791A JPH04288825A (en) | 1991-03-18 | 1991-03-18 | Method of forming heat resistant contact |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5271791A JPH04288825A (en) | 1991-03-18 | 1991-03-18 | Method of forming heat resistant contact |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04288825A true JPH04288825A (en) | 1992-10-13 |
Family
ID=12922669
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5271791A Pending JPH04288825A (en) | 1991-03-18 | 1991-03-18 | Method of forming heat resistant contact |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04288825A (en) |
-
1991
- 1991-03-18 JP JP5271791A patent/JPH04288825A/en active Pending
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