JPH04287314A - Hydrogenated amorphous silicon laminated body and its manufacture - Google Patents
Hydrogenated amorphous silicon laminated body and its manufactureInfo
- Publication number
- JPH04287314A JPH04287314A JP3077052A JP7705291A JPH04287314A JP H04287314 A JPH04287314 A JP H04287314A JP 3077052 A JP3077052 A JP 3077052A JP 7705291 A JP7705291 A JP 7705291A JP H04287314 A JPH04287314 A JP H04287314A
- Authority
- JP
- Japan
- Prior art keywords
- amorphous silicon
- hydrogenated amorphous
- film
- silicon
- base material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 title claims abstract description 31
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 239000000463 material Substances 0.000 claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 229920000307 polymer substrate Polymers 0.000 claims abstract description 8
- XMIJDTGORVPYLW-UHFFFAOYSA-N [SiH2] Chemical compound [SiH2] XMIJDTGORVPYLW-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000004952 Polyamide Substances 0.000 claims abstract description 4
- 238000000862 absorption spectrum Methods 0.000 claims abstract description 4
- 229920001577 copolymer Polymers 0.000 claims abstract description 4
- 229920000058 polyacrylate Polymers 0.000 claims abstract description 4
- 229920002647 polyamide Polymers 0.000 claims abstract description 4
- 229920000515 polycarbonate Polymers 0.000 claims abstract description 4
- 239000004417 polycarbonate Substances 0.000 claims abstract description 4
- 229920000728 polyester Polymers 0.000 claims abstract description 4
- 229920000098 polyolefin Polymers 0.000 claims abstract description 4
- 229920000915 polyvinyl chloride Polymers 0.000 claims abstract description 4
- 239000004800 polyvinyl chloride Substances 0.000 claims abstract description 4
- 239000010408 film Substances 0.000 claims description 24
- 239000010409 thin film Substances 0.000 claims description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 16
- 229910052710 silicon Inorganic materials 0.000 claims description 16
- 239000010703 silicon Substances 0.000 claims description 16
- 239000007789 gas Substances 0.000 claims description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- 239000004215 Carbon black (E152) Substances 0.000 claims description 2
- 229910000676 Si alloy Inorganic materials 0.000 claims description 2
- 229910052786 argon Inorganic materials 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- QUZPNFFHZPRKJD-UHFFFAOYSA-N germane Chemical compound [GeH4] QUZPNFFHZPRKJD-UHFFFAOYSA-N 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- 229910052986 germanium hydride Inorganic materials 0.000 claims description 2
- 229910052736 halogen Inorganic materials 0.000 claims description 2
- 150000002367 halogens Chemical class 0.000 claims description 2
- 239000001307 helium Substances 0.000 claims description 2
- 229910052734 helium Inorganic materials 0.000 claims description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 2
- 229930195733 hydrocarbon Natural products 0.000 claims description 2
- 150000002430 hydrocarbons Chemical class 0.000 claims description 2
- 239000011364 vaporized material Substances 0.000 claims description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims 1
- -1 and (B) H2 Chemical compound 0.000 description 7
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- 229920000139 polyethylene terephthalate Polymers 0.000 description 6
- 239000005020 polyethylene terephthalate Substances 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 206010034972 Photosensitivity reaction Diseases 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000036211 photosensitivity Effects 0.000 description 3
- 150000005837 radical ions Chemical class 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 1
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- 239000004962 Polyamide-imide Substances 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 239000004697 Polyetherimide Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 108091008695 photoreceptors Proteins 0.000 description 1
- 229920002312 polyamide-imide Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920006267 polyester film Polymers 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 229920001601 polyetherimide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は、水素化アモルファスシ
リコン薄膜に関し、良質の水素化アモルファスシリコン
系合金膜を低温で高分子基板（基材）上に作製すること
で基板（基材）材料の選択範囲が広く、安価なアモルフ
ァスシリコン薄膜を提供することである。[Industrial Application Field] The present invention relates to hydrogenated amorphous silicon thin films, and the present invention relates to thin films of hydrogenated amorphous silicon, and the present invention relates to thin films of hydrogenated amorphous silicon. The object of the present invention is to provide an inexpensive amorphous silicon thin film with a wide selection range.
【０００２】0002
【従来の技術】水素化アモルファスシリコン薄膜は、太
陽電池、光センサー、薄膜トランジスター、電子写真感
光体等に幅広く実用化されつつある。かかるシリコン及
びシリコン系合金薄膜の形成手段として、シリコンター
ゲットを活性水素雰囲気でスパッタリングする方法、又
はＳｉＨ４ 等のガスをグロー放電で分解する方法が知
られている。2. Description of the Related Art Hydrogenated amorphous silicon thin films are being widely put into practical use in solar cells, optical sensors, thin film transistors, electrophotographic photoreceptors, and the like. As means for forming such silicon and silicon-based alloy thin films, a method is known in which a silicon target is sputtered in an active hydrogen atmosphere, or a method in which a gas such as SiH4 is decomposed by glow discharge.
【０００３】0003
【発明が解決しようとする課題】上記スパッタリング法
で得られるシリコン及びシリコン系合金薄膜は、膜特性
に大きく影響を与える水素含有量をコントロールするこ
とが困難なため良質のものが得られ難い。一方グロー放
電ではダングリングボンド、ボイド等の欠陥の少ない膜
が得られるため、シリコン及びシリコン系合金薄膜形成
の主流となっている。しかし、ながらこのグロー放電と
いえども解決すべき問題点を内在させている。従来の成
膜方法では、良い性能（光感度４桁以上）のシリコン及
びシリコン系合金薄膜を得るためには、基板（基材）を
比較的高温（１００℃〜３５０℃）に加熱する必要があ
るために、高分子材料等の比較的融点の低い材料は基板
として適用することができず、基板材料の適用範囲が狭
くなり安価な材料を提供できないと言う問題がある。[Problems to be Solved by the Invention] It is difficult to obtain high-quality silicon and silicon-based alloy thin films obtained by the above-mentioned sputtering method because it is difficult to control the hydrogen content, which greatly affects film properties. On the other hand, glow discharge provides a film with fewer defects such as dangling bonds and voids, so it has become the mainstream method for forming silicon and silicon-based alloy thin films. However, even this glow discharge has inherent problems that need to be solved. In conventional film-forming methods, in order to obtain silicon and silicon-based alloy thin films with good performance (photosensitivity of 4 digits or more), it is necessary to heat the substrate (base material) to a relatively high temperature (100°C to 350°C). Therefore, materials with relatively low melting points such as polymeric materials cannot be used as substrates, and there is a problem that the range of application of substrate materials is narrowed and inexpensive materials cannot be provided.
【０００４】事実、高分子基板上のアモルファスシリコ
ン薄膜はすでに、特開昭５４ー１４９４８９号、特開昭
５５ー４９９４号、特開昭５５ー１５４７２６号各公報
に記載されている。しかし、いずれの場合も、高分子基
板としては、良質のアモルファスシリコンを積層すると
言う点である程度の耐熱性を有することが必要である。
耐熱性のある高分子と言うことでは、一般的にポリイミ
ド、ポリアミドイミド、ポリフェニレンサルファイド、
ポリエーテルイミド、ポリエーテルスルフォン、ポリエ
ーテルエーテルケトン等が用いられているが、これはア
モルファスシリコンを堆積する温度領域での加熱により
溶媒、水等の放出が起こり、良質のアモルファスシリコ
ンが形成できない。尚且つ、価格が高い。In fact, amorphous silicon thin films on polymer substrates have already been described in Japanese Patent Laid-Open Nos. 149489-1989, 4994-1980, and 154726-1980. However, in either case, the polymer substrate needs to have a certain degree of heat resistance since high-quality amorphous silicon is laminated thereon. Heat-resistant polymers generally include polyimide, polyamideimide, polyphenylene sulfide,
Polyetherimide, polyether sulfone, polyether ether ketone, etc. are used, but when heated in the temperature range for depositing amorphous silicon, solvents, water, etc. are released, and good quality amorphous silicon cannot be formed. Moreover, the price is high.
【０００５】[0005]
【課題を解決するための手段】そこで、本発明者らはか
かる状況に鑑み、鋭意研究を重ねた結果、次なる発明に
到達した。すなわち本発明は、従来法のような高温に基
材を加熱する必要が少なく、比較的低温で、しかも速い
堆積速度で薄膜を製造することができ、かつ優れた特性
を有する含シリコン薄膜及びその製造方法を提供するも
のである。[Means for Solving the Problems] In view of the above situation, the present inventors have conducted extensive research and have arrived at the following invention. In other words, the present invention provides a silicon-containing thin film and its silicon-containing thin film that can be produced at a relatively low temperature and at a high deposition rate without the need to heat a substrate to high temperatures unlike conventional methods, and that has excellent properties. A manufacturing method is provided.
【０００６】すなわち、本発明は水素化アモルファスシ
リコン膜が、高分子基材（板）上に積層されてなる水素
化アモルファスシリコン積層体であって、該水素化アモ
ルファスシリコン膜中において、ＳｉＨ２ ／ＳｉＨ比
（赤外吸収スペクトルの２０９０ｃｍ−１のピーク高さ
と同２０００ｃｍ−１のピーク高さとの比）が１以上で
あることを特徴とする水素化アモルファスシリコン積層
体であり、高分子基材が、ポリエステル、ポリアミド、
ポリオレフィン、ポリアクリレート、ポリカ−ボネ−ト
、ポリ塩化ビニル、およびそれらの共重合体から選ばれ
た１種以上を主成分とするものである水素化アモルファ
スシリコン積層体であり、また高分子基材（板）上に水
素化アモルファスシリコン薄膜を形成するに際して、（
Ａ）シリコン、シリコン系合金、ゲルマニウム、炭素か
ら選ばれた１種または２種以上の、かつ少なくともシリ
コンを含む蒸気化した材料と、（Ｂ）Ｈ２ 、ＧｅＨ４
、ＳｉＨ４ 、ハロゲン、アルゴン、ヘリウムのガス
および炭化水素ガスから選ばれた１種または２種以上が
プラズマ中に導入された材料とを、同一チャンバに導入
し、低温（９５℃以下）の基材上に（Ａ）と（Ｂ）とを
含有する薄膜を形成せしめることを特徴とする水素化ア
モルファスシリコン積層体の製法である。That is, the present invention provides a hydrogenated amorphous silicon laminate in which a hydrogenated amorphous silicon film is laminated on a polymer substrate (plate), and in the hydrogenated amorphous silicon film, SiH2 /SiH A hydrogenated amorphous silicon laminate characterized in that the ratio (ratio of the peak height at 2090 cm-1 to the peak height at 2000 cm-1 in the infrared absorption spectrum) is 1 or more, and the polymer base material is polyester, polyamide,
A hydrogenated amorphous silicon laminate whose main component is one or more selected from polyolefin, polyacrylate, polycarbonate, polyvinyl chloride, and copolymers thereof, and a polymer base material. When forming a hydrogenated amorphous silicon thin film on (plate), (
A) a vaporized material containing at least silicon and one or more selected from silicon, silicon-based alloys, germanium, and carbon, and (B) H2, GeH4
, SiH4, halogen, argon, helium gas, and a material in which one or more selected from hydrocarbon gases are introduced into the plasma into the same chamber, and the base material is heated at a low temperature (below 95°C). This is a method for producing a hydrogenated amorphous silicon laminate, characterized by forming a thin film containing (A) and (B) thereon.
【０００７】従来グロー放電（ＣＶＤ）では、基板温度
を比較的高温（１００℃〜３５０℃）に加熱する必要が
あるため膜中の水素がある程度熱脱離しその結果、膜中
の水素結合様式はＳｉＨ２ 比べＳｉＨが多い方が良質
の膜が得られるとされていた。しかしながら、本発明に
於いては、低温で良質の膜が得られるため膜中の水素結
合様式はＳｉＨ比べＳｉＨ２ が多い。In conventional glow discharge (CVD), it is necessary to heat the substrate to a relatively high temperature (100°C to 350°C), so hydrogen in the film is thermally desorbed to some extent, and as a result, the hydrogen bonding pattern in the film is It was believed that a higher quality film could be obtained with more SiH than SiH2. However, in the present invention, since a high quality film can be obtained at a low temperature, the hydrogen bonding mode in the film is more SiH2 than SiH.
【０００８】より具体的に本発明を説明する。図１は本
発明における１例の装置の概略を示す図である。チャン
バー１．、チャンバ２．は真空ライン（ガス排気口）を
有しており、チャンバ内は大気圧より低圧にすることが
できる。チャンバ２．、内部には第一の材料を入れるた
め“るつぼ”５．が設けられており、このるつぼは、Ｅ
Ｂガン６．（電子銃）又は抵抗加熱装置又は誘導加熱に
より加熱され、中の材料は蒸気となる。第１の材料を２
種以上使用する時は、混合もしくは５．を２ヶ以上設け
ることにより対応する。るつぼ上部には、基材３．が基
材ホルダー４．によって支持されている。基材ホルダー
４．は任意の角度θで固定されている。さらに基材およ
び基材ホルダーは、ヒーター１２．によって加熱されて
もよいが、但し基材が高分子フィルムのような高分子基
材であるときは、勿論、基材に損傷のおよぼさないよう
に制御されねばならない。一方、第二の材料、すなわち
（Ｂ）はチャンバ１．内にガス導入口１１．から導入さ
れる。導入された第二の材料は、マイクロ波電源９．（
通常は２．４５ＧＨｚ程度）により発生するマイクロ波
が導波管１０．を通り第二の材料と接することにより、
励起されプラズマを発生する。この発生したプラズマは
、好ましい適応として、コイル８．により磁場で閉じ込
められ、そのラジカル・イオン濃度が高められる、この
際の磁場の磁束密度は、１００〜３０００ガウスが好ま
しい。The present invention will be explained in more detail. FIG. 1 is a diagram schematically showing an example of an apparatus according to the present invention. Chamber 1. , chamber 2. has a vacuum line (gas exhaust port), and the pressure inside the chamber can be lower than atmospheric pressure. Chamber 2. 5. Inside is a "crucible" to put the first material. is provided, and this crucible is
B gun 6. (electron gun) or resistance heating device or induction heating, and the material inside becomes a vapor. 2 of the first ingredients
When using more than one species, mix or 5. This can be handled by providing two or more. At the top of the crucible, there is a base material 3. is the base material holder 4. Supported by Base material holder 4. is fixed at an arbitrary angle θ. Further, the substrate and the substrate holder are connected to the heater 12. However, when the substrate is a polymeric substrate such as a polymeric film, the heating must be controlled so as not to damage the substrate. On the other hand, the second material, i.e. (B), is in the chamber 1. Gas inlet 11. It is introduced from The second material introduced is the microwave power source 9. (
Microwaves generated by the waveguide 10. By passing through and coming into contact with the second material,
It is excited and generates plasma. This generated plasma is preferably applied to the coil 8. The radical ions are confined in a magnetic field and the concentration of radical ions is increased.The magnetic flux density of the magnetic field is preferably 100 to 3000 Gauss.
【０００９】このプラズマ中で発生したラジカル・イオ
ンと、るつぼで蒸気化された第一の材料とが同時に基材
上、または基材近傍に供給され、基材上に両者を含む薄
膜が堆積する。チャンバ内の圧力は、電子銃の動作を安
定させるために、１×１０−３Ｔｏｒｒ以下であること
が望ましい。[0009] The radical ions generated in this plasma and the first material vaporized in the crucible are simultaneously supplied onto the base material or near the base material, and a thin film containing both is deposited on the base material. . The pressure inside the chamber is preferably 1×10 −3 Torr or less in order to stabilize the operation of the electron gun.
【００１０】本発明に用いられる高分子基材（板）は、
ポリエステル、ポリアミド、ポリオレフィン、ポリアク
リレート、ポリカ−ボネ−ト、ポリ塩化ビニル、および
それらの共重合体から選ばれた１種以上を主成分とする
ものであり、好ましくは、フィルムまたはシートの形態
であり、なかでもポリエチレンテレフタレートを主とす
るポリエステルのフィルムが好ましい。[0010] The polymer base material (plate) used in the present invention is
The main component is one or more selected from polyester, polyamide, polyolefin, polyacrylate, polycarbonate, polyvinyl chloride, and copolymers thereof, and is preferably in the form of a film or sheet. Among them, polyester films mainly made of polyethylene terephthalate are preferred.
【００１１】[0011]
【実施例】以下に本発明の実施例を示すが本発明はこれ
らの実施例に限定されるものではい。
実施例１
基材としてポリエチレンテレフタレートを用いて水素化
アモルファスシリコン膜を以下の条件で堆積させた製膜
条件
真空度：１．５＊１０−４Ｔｏｒｒ
第一の材料：ポリシリコン（Ｎ型）
第二の材料：Ｈ２ ガス
マイクロ波パワー：３５０Ｗ ２．４５ＧＨｚ電
子銃出力：１０ＫＶ，１３５ｍＡ
磁束密度：２０００ガウス
基材温度：２０℃
得られた膜の暗導電率は、２．３＊１０−１１ Ｓ・ｃ
ｍ−１，光導電率は、４．４＊１０−６Ｓ・ｃｍ−１で
あった。又、膜中の水素結合様式のＳｉＨ２ ／ＳｉＨ
比（赤外吸収スペクトルの２０９０ｃｍ−１／２０００
ｃｍ−１のピーク比）は１．３であった。[Examples] Examples of the present invention are shown below, but the present invention is not limited to these examples. Example 1 Film forming conditions in which a hydrogenated amorphous silicon film was deposited under the following conditions using polyethylene terephthalate as a base material Vacuum degree: 1.5*10-4 Torr First material: Polysilicon (N type) Second Material: H2 Gas microwave power: 350W 2.45GHz electron gun output: 10KV, 135mA Magnetic flux density: 2000 Gauss Base material temperature: 20℃ Dark conductivity of the obtained film is 2.3*10-11 S. c.
m-1, and the photoconductivity was 4.4*10-6S·cm-1. In addition, the hydrogen bonding mode of SiH2 /SiH in the film
Ratio (infrared absorption spectrum 2090cm-1/2000
The peak ratio in cm-1) was 1.3.
【００１２】比較例１
基材としてポリエチレンテレフタレートを用いて水素化
アモルファスシリコン膜を平行平板プラズマＣＶＤで以
下の条件で堆積させた
真空度：２．３＊１０−２Ｔｏｒｒ
原料の材料：シラン ＳｉＨ４ ５０ＳＣＣＭＲ
Ｆパワー：１００Ｗ １３．５６ＭＨｚ基材温度：２
０℃
得られた膜の暗導電率は、３．７＊１０−１２ Ｓ・ｃ
ｍ−１，光導電率は、３．９＊１０−１２ Ｓ・ｃｍ−
１で光感度を有する膜は得られなかった。Comparative Example 1 Using polyethylene terephthalate as a base material, a hydrogenated amorphous silicon film was deposited by parallel plate plasma CVD under the following conditions. Degree of vacuum: 2.3*10-2 Torr Raw material: Silane SiH4 50SCCMR
F power: 100W 13.56MHz Base material temperature: 2
The dark conductivity of the obtained film at 0°C is 3.7*10-12 S・c
m-1, photoconductivity is 3.9*10-12 S cm-
No film with photosensitivity was obtained with Sample No. 1.
【００１３】比較例１ー２
基材としてポリエチレンテレフタレートを用いて水素化
アモルファスシリコン膜を平行平板プラズマＣＶＤで以
下の条件で堆積させた
真空度：３．５＊１０−２Ｔｏｒｒ
原料の材料：シラン ＳｉＨ４ ５０ＳＣＣＭＲ
Ｆパワー：１００Ｗ １３．５６ＭＨｚ基材温度：１
５０℃
この条件ではポリエチレンテレフタレートから水分が多
く放出されている（比較例１に比べ２３倍）ことが四重
極質量分析計により確認された。又、熱分解したポリエ
チレンテレフタレートのオリゴマーも検出された。得ら
れた膜の暗導電率は、４．４＊１０−１１ Ｓ・ｃｍ−
１，光導電率は、１．１＊１０−１０ Ｓ・ｃｍ−１で
光感度を有する膜は得られなかった。Comparative Example 1-2 Using polyethylene terephthalate as a base material, a hydrogenated amorphous silicon film was deposited by parallel plate plasma CVD under the following conditions. Vacuum degree: 3.5*10-2 Torr Raw material: Silane SiH4 50SCCMR
F power: 100W 13.56MHz Base material temperature: 1
50°C Under this condition, it was confirmed by a quadrupole mass spectrometer that a large amount of water was released from polyethylene terephthalate (23 times as much as in Comparative Example 1). Oligomers of pyrolyzed polyethylene terephthalate were also detected. The dark conductivity of the obtained film was 4.4*10-11 S cm-
1. The photoconductivity was 1.1*10-10 S·cm-1, and no film with photosensitivity was obtained.
【００１４】[0014]
【発明の効果】本発明によれば、良質のシリコン系合金
膜を低温で高分子基板（基材）上に作製することで基板
（基材）材料の選択範囲が広く、安価なアモルファスシ
リコン薄膜を提供することができる。[Effects of the Invention] According to the present invention, by producing a high-quality silicon alloy film on a polymer substrate (base material) at low temperature, a wide range of substrate (base material) materials can be selected, and an inexpensive amorphous silicon thin film is produced. can be provided.
【図１】本発明における１例の装置の概略を示す図であ
る。FIG. 1 is a diagram schematically showing an example of a device according to the present invention.
１．チャンバ１ ２．チャンバ２ ３．基材 ４．基材ホルダー ５．るつぼ ６．ＥＢガン ７．ガス排気口 ８．コイル ９．マイクロ波電源 １０．導波管 １１．ガス導入口 １２．ヒーター 1. chamber 1 2. chamber 2 3. Base material 4. base material holder 5. crucible 6. EB gun 7. gas exhaust port 8. coil 9. microwave power supply 10. waveguide 11. Gas inlet 12. heater
Claims (3)
、高分子基材（板）上に積層されてなる水素化アモルフ
ァスシリコン積層体であって、該水素化アモルファスシ
リコン膜中において、ＳｉＨ２ ／ＳｉＨ比（赤外吸収
スペクトルの２０９０ｃｍ−１のピーク高さと同２００
０ｃｍ−１のピーク高さとの比）が１以上であることを
特徴とする水素化アモルファスシリコン積層体。1. A hydrogenated amorphous silicon laminate in which a hydrogenated amorphous silicon film is laminated on a polymer substrate (plate), wherein the hydrogenated amorphous silicon film has a SiH2 /SiH ratio (red Same as the peak height of 2090 cm-1 in the external absorption spectrum 200
1. A hydrogenated amorphous silicon laminate, characterized in that the ratio (to a peak height of 0 cm-1) is 1 or more.
リアミド、ポリオレフィン、ポリアクリレート、ポリカ
−ボネ−ト、ポリ塩化ビニル、およびそれらの共重合体
から選ばれた１種以上を主成分とするものである請求項
１の水素化アモルファスシリコン積層体。2. The polymeric base material is mainly composed of one or more selected from polyester, polyamide, polyolefin, polyacrylate, polycarbonate, polyvinyl chloride, and copolymers thereof. A hydrogenated amorphous silicon laminate according to claim 1.
ルファスシリコン薄膜を形成するに際して、（Ａ）シリ
コン、シリコン系合金、ゲルマニウム、炭素から選ばれ
た１種または２種以上の、かつ少なくともシリコンを含
む蒸気化した材料と、（Ｂ）Ｈ２ 、ＧｅＨ４ 、Ｓｉ
Ｈ４ 、ハロゲン、アルゴン、ヘリウムのガスおよび炭
化水素ガスから選ばれた１種または２種以上がプラズマ
中に導入された材料とを、同一チャンバに導入し、低温
（９５℃以下）の基材上に（Ａ）と（Ｂ）とを含有する
薄膜を形成せしめることを特徴とする水素化アモルファ
スシリコン積層体の製法。3. When forming a hydrogenated amorphous silicon thin film on a polymer substrate (plate), (A) one or more selected from silicon, silicon alloy, germanium, and carbon, and at least Vaporized materials containing silicon and (B) H2, GeH4, Si
A material in which one or more selected from H4, halogen, argon, helium gas, and hydrocarbon gas is introduced into the plasma is introduced into the same chamber, and the material is placed on a substrate at a low temperature (below 95°C). 1. A method for producing a hydrogenated amorphous silicon laminate, which comprises forming a thin film containing (A) and (B).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3077052A JPH04287314A (en) | 1991-03-15 | 1991-03-15 | Hydrogenated amorphous silicon laminated body and its manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3077052A JPH04287314A (en) | 1991-03-15 | 1991-03-15 | Hydrogenated amorphous silicon laminated body and its manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04287314A true JPH04287314A (en) | 1992-10-12 |
Family
ID=13623017
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3077052A Pending JPH04287314A (en) | 1991-03-15 | 1991-03-15 | Hydrogenated amorphous silicon laminated body and its manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04287314A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1997022141A1 (en) * | 1995-12-14 | 1997-06-19 | Seiko Epson Corporation | Method of manufacturing thin film semiconductor device, and thin film semiconductor device |
| US6391690B2 (en) | 1995-12-14 | 2002-05-21 | Seiko Epson Corporation | Thin film semiconductor device and method for producing the same |
| EP1918319A3 (en) * | 2006-10-30 | 2009-02-18 | Shin-Etsu Film Co., Ltd. | Gas barrier plastic body and gas barrier plastic film |
-
1991
- 1991-03-15 JP JP3077052A patent/JPH04287314A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1997022141A1 (en) * | 1995-12-14 | 1997-06-19 | Seiko Epson Corporation | Method of manufacturing thin film semiconductor device, and thin film semiconductor device |
| US6391690B2 (en) | 1995-12-14 | 2002-05-21 | Seiko Epson Corporation | Thin film semiconductor device and method for producing the same |
| US6660572B2 (en) | 1995-12-14 | 2003-12-09 | Seiko Epson Corporation | Thin film semiconductor device and method for producing the same |
| EP1918319A3 (en) * | 2006-10-30 | 2009-02-18 | Shin-Etsu Film Co., Ltd. | Gas barrier plastic body and gas barrier plastic film |
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