JPH04284640A - Inspection apparatus for semiconductor wafer - Google Patents

Inspection apparatus for semiconductor wafer

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Publication number
JPH04284640A
JPH04284640A JP7205491A JP7205491A JPH04284640A JP H04284640 A JPH04284640 A JP H04284640A JP 7205491 A JP7205491 A JP 7205491A JP 7205491 A JP7205491 A JP 7205491A JP H04284640 A JPH04284640 A JP H04284640A
Authority
JP
Japan
Prior art keywords
semiconductor wafer
wafer
probe needle
contact
probe
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7205491A
Other languages
Japanese (ja)
Inventor
Shinjiro Watanabe
真二郎 渡辺
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Yamanashi Ltd
Original Assignee
Tokyo Electron Yamanashi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Yamanashi Ltd filed Critical Tokyo Electron Yamanashi Ltd
Priority to JP7205491A priority Critical patent/JPH04284640A/en
Publication of JPH04284640A publication Critical patent/JPH04284640A/en
Pending legal-status Critical Current

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  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Measuring Leads Or Probes (AREA)

Abstract

PURPOSE:To enhance the production yield of semiconductor chips by a method wherein whether a probe needle has come into contact with a semiconductor wafer or not is detected by using a contact detection part, an operation is executed by using an operation device on the basis of its result and a control device adjusts the reference face of a semiconductor-wafer mounting-stage movement device according to the swell of the semiconductor wafer. CONSTITUTION:A wafer mounting stage 1 is raised largely and coarsely to the upper part up to a coarse raise face by using a wafer mounting-stage movement device 9; after that, the wafer mounting stage 1 is raised fine and slightly a plurality of times. Then, a probe-needle movable part 3 comes into contact with a chip electrode 5 on a semiconductor wafer 2; the movable part 3 is separated form a probe-needle fixation part 4; the movable part 3 and the fixation part 4 are changed from a contact state to a noncontact state. A change in the state is detected by using a contact detection part 6, and an operation is executed by using an operation device 7. A control part 8 adjusts the reference face of the movement device 9 according to the swell of the semiconductor wafer 2.

Description

【発明の詳細な説明】[Detailed description of the invention]

【0001】0001

【産業上の利用分野】本発明は半導体ウエハ検査装置に
関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor wafer inspection apparatus.

【0002】0002

【従来の技術】従来、半導体素子を製造する場合におい
て、半導体ウエハ上に形成された複数の半導体チップの
電気的特性を検査するために、ウエハプローバが用いら
れてきた。図3は従来の半導体ウエハプローバのプロー
ブカードの構造を示す図である。図において、プローブ
カードは基板10上に開口15が設けられ、この開口の
下に検査されるべき半導体ウエハ2が位置され、プロー
ブ針11〜14がその半導体ウエハ2に接触して、半導
体ウエハ2の存在を確認するとともに半導体ウエハの特
性を検査する。図4は半導体ウエハ2の存在を確認する
ためのプローブ針11、14の構造を示す図であり、上
記プローブ針11、14は固定針4と可動針3から構成
されている。図4(a)はプローブ針11が半導体ウエ
ハ2に接触する前の状態を示す。プローブ針11が半導
体ウエハ2に接触する前はプローブ針11の固定針4と
可動針3とが接触し導通状態になっている。図4(b)
はプローブ針11が半導体ウエハ2に接触した後可動針
3が押し上げられた状態を示す。プローブ針11が半導
体ウエハ2に接触した後はプローブ針11の固定針4と
可動針3とが離れ非導通状態になり、プローブ針11の
導通または非導通の状態によって半導体ウエハとプロー
ブ針11〜14との接触状態が検出される。
2. Description of the Related Art Conventionally, when manufacturing semiconductor devices, a wafer prober has been used to inspect the electrical characteristics of a plurality of semiconductor chips formed on a semiconductor wafer. FIG. 3 is a diagram showing the structure of a probe card of a conventional semiconductor wafer prober. In the figure, the probe card is provided with an opening 15 on a substrate 10, a semiconductor wafer 2 to be inspected is placed under this opening, and the probe needles 11 to 14 are in contact with the semiconductor wafer 2. In addition to confirming the existence of FIG. 4 is a diagram showing the structure of the probe needles 11 and 14 for confirming the presence of the semiconductor wafer 2. The probe needles 11 and 14 are composed of a fixed needle 4 and a movable needle 3. FIG. 4A shows the state before the probe needle 11 comes into contact with the semiconductor wafer 2. Before the probe needle 11 contacts the semiconductor wafer 2, the fixed needle 4 and the movable needle 3 of the probe needle 11 are in contact with each other and are in a conductive state. Figure 4(b)
shows a state in which the movable needle 3 is pushed up after the probe needle 11 contacts the semiconductor wafer 2. After the probe needle 11 contacts the semiconductor wafer 2, the fixed needle 4 and the movable needle 3 of the probe needle 11 are separated and become non-conductive, and depending on the conductive or non-conductive state of the probe needle 11, the semiconductor wafer and the probe needles 11- 14 is detected.

【0003】0003

【発明が解決しようとする課題】しかしながら、図2に
示すように半導体ウエハはその面全体ではうねりDがあ
る。図2においてこのうねりDの幅は最大数百μにもな
る。このために、検出対象のチップの位置が半導体ウエ
ハのうねりの低部にある場合はプローブ針可動部3は半
導体ウエハのチップに接触することができない。また、
検出対象のチップが半導体ウエハのうねりの高部にある
場合はプローブ針可動部3は半導体ウエハに対して圧力
が強すぎることになり半導体ウエハ上の電極またはプロ
ーブ針可動部が損傷することになる。このために半導体
チップの製造歩留まりが悪くなる。本発明は半導体ウエ
ハにうねりがあっても、半導体ウエハ検査装置がそのう
ねりに追随してウエハプローバのプローブ針可動部を常
に、ウエハの面に適当な圧力で接触させるように構成さ
れた半導体ウエハ検査装置を提供することにある。
However, as shown in FIG. 2, a semiconductor wafer has undulations D over its entire surface. In FIG. 2, the width of this undulation D is several hundred μ at the maximum. For this reason, when the chip to be detected is located at the bottom of the undulations of the semiconductor wafer, the probe needle movable section 3 cannot come into contact with the chip of the semiconductor wafer. Also,
If the chip to be detected is located at the height of the undulations of the semiconductor wafer, the probe needle movable section 3 will apply too much pressure to the semiconductor wafer, resulting in damage to the electrode on the semiconductor wafer or the probe needle movable section. . For this reason, the manufacturing yield of semiconductor chips deteriorates. The present invention provides a semiconductor wafer that is configured such that even if the semiconductor wafer has waviness, the semiconductor wafer inspection device follows the waviness and always brings the movable probe needle of the wafer prober into contact with the surface of the wafer with an appropriate pressure. Our objective is to provide inspection equipment.

【0004】0004

【課題を解決するための手段】本発明は、半導体ウエハ
上に形成された複数の半導体チップの電気的特性を検査
する半導体ウエハ検査装置において、半導体ウエハ上の
チップに接触するプローブ針と、前記プローブ針の接触
状態を検出する接触検出部と、前記接触検出部の結果に
従って演算を行う演算装置と、半導体ウエハを移動させ
るウエハ載置台移動装置と、前記演算装置の結果によっ
て前記ウエハ載置台移動装置の移動を制御する制御装置
とを備え、半導体ウエハのうねりに追随してプローブ針
の圧力がほぼ一定になるように前記ウエハ載置台移動装
置が制御される。
[Means for Solving the Problems] The present invention provides a semiconductor wafer inspection apparatus for inspecting the electrical characteristics of a plurality of semiconductor chips formed on a semiconductor wafer. a contact detection section that detects the contact state of the probe needle; a calculation device that performs calculations according to the results of the contact detection section; a wafer table moving device that moves the semiconductor wafer; and a wafer table movement device that moves the wafer placement table based on the results of the calculation device. and a control device for controlling movement of the device, and the wafer stage moving device is controlled so that the pressure of the probe needle is substantially constant following the undulations of the semiconductor wafer.

【0005】[0005]

【作用】本発明においては、プローブ針が半導体ウエハ
に接触したか否かを接触検出部で検出し、その結果に基
づいて演算装置で演算を行い、制御装置が半導体ウエハ
載置台移動装置の基準面を半導体ウエハのうねりに応じ
て調整する。
[Operation] In the present invention, the contact detection unit detects whether or not the probe needle has contacted the semiconductor wafer, the arithmetic unit performs calculations based on the result, and the control unit controls the semiconductor wafer mounting table moving device. Adjust the surface according to the waviness of the semiconductor wafer.

【0006】[0006]

【実施例】第1図は本発明の一実施例の半導体ウエハ検
査装置を示すブロック図である。図1において、1はウ
エハ載置台、2は半導体ウエハ、3はプローブ針可動部
、4はプローブ針固定部、5はチップ電極、6は接触検
出部、7は演算装置、8は制御装置、9はウエハ載置台
移動装置であり、水平方向のX,Y軸方向及び垂直方向
のZ軸方向に移動可能である。図において、まず測定開
始時の最初のチップにおいて、ウエハ載置台移動装置9
がウエハ載置台1を上方に、半導体ウエハのうねりの状
態によって若干異なるが半導体ウエハ表面より、例えば
25μm手前の位置である粗上昇面まで大きく粗上昇さ
せ、その後小幅に(たとえば10μずつ)複数回数ウエ
ハ載置台1を微上昇させ30μm上昇させると、プロー
ブ針可動部3が半導体ウエハ2上のチップ電極5に接触
し、プローブ針可動部3はプローブ針固定部4から離れ
、プローブ針可動部3とプローブ針固定部4は接触状態
から非接触状態に変化する。この状態変化を接触検出部
6が検出し、演算装置7内の図示しないメモリ部に記憶
させる。この後にチップの電気的特性の測定が行われる
DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a block diagram showing a semiconductor wafer inspection apparatus according to an embodiment of the present invention. In FIG. 1, 1 is a wafer mounting table, 2 is a semiconductor wafer, 3 is a probe needle movable part, 4 is a probe needle fixing part, 5 is a chip electrode, 6 is a contact detection part, 7 is a calculation device, 8 is a control device, Reference numeral 9 denotes a wafer mounting table moving device, which is movable in the horizontal direction of the X and Y axes and the vertical direction of the Z axis. In the figure, for the first chip at the start of measurement, the wafer mounting table moving device 9
The wafer mounting table 1 is roughly raised upwards to a roughly raised surface that is, for example, 25 μm in front of the semiconductor wafer surface, although it varies slightly depending on the waviness state of the semiconductor wafer, and then in small steps (for example, by 10 μm) multiple times. When the wafer mounting table 1 is slightly raised by 30 μm, the probe needle movable part 3 comes into contact with the chip electrode 5 on the semiconductor wafer 2, the probe needle movable part 3 separates from the probe needle fixed part 4, and the probe needle movable part 3 Then, the probe needle fixing portion 4 changes from a contact state to a non-contact state. The contact detection section 6 detects this state change and stores it in a memory section (not shown) in the arithmetic unit 7. After this, the electrical characteristics of the chip are measured.

【0007】次のチップを検査するために、演算装置7
は、最初に測定したチップの隣のチップ位置にプローブ
針可動部3が移動するように、ウエハ載置台移動装置9
をX,Y軸方向に所定量移動させる。さらに演算装置7
は制御装置8とウエハ載置台移動装置9を制御してウエ
ハ載置台1を前回定めた上記粗上昇面まで大きく粗上昇
させ、その後小幅に(例えば、10μずつ)あらかじめ
定められた回数(例えば、6回)ウエハ載置台1を上方
に微上昇させる。例えばウエハ載置台1を20μm上昇
させると、プローブ針可動部3が半導体ウエハ2上のチ
ップ電極5に接触し、プローブ針可動部3はプローブ針
固定部4から離れ、プローブ針可動部3とプローブ針固
定部4は接触状態から非接触状態に変化する。この状態
変化を接触検出部6が検出し、演算装置7内の図示しな
いメモリ部に記憶させる。上記の状態においては、最初
のチップと次のチップの位置におけるウエハは、メモリ
のデータから高い方向に10μmうねっていると判定さ
れる。したがって、このような接触状態が、例えば連続
2回(一般的にはn回)続いた場合にはその時点のウエ
ハ載置台1の粗上昇面を、例えば10μm低く演算装置
7が再設定する。
In order to test the next chip, the arithmetic unit 7
The wafer stage moving device 9 moves the probe needle movable part 3 to the chip position next to the chip measured first.
is moved by a predetermined amount in the X and Y axis directions. Furthermore, the calculation device 7
controls the control device 8 and the wafer mounting table moving device 9 to raise the wafer mounting table 1 largely to the previously determined rough rising surface, and then moves it in small steps (for example, in increments of 10μ) a predetermined number of times (for example, (6 times) Slightly raise the wafer mounting table 1 upward. For example, when the wafer mounting table 1 is raised by 20 μm, the probe needle movable part 3 comes into contact with the chip electrode 5 on the semiconductor wafer 2, the probe needle movable part 3 separates from the probe needle fixed part 4, and the probe needle movable part 3 and the probe The needle fixing portion 4 changes from a contact state to a non-contact state. The contact detection section 6 detects this state change and stores it in a memory section (not shown) in the arithmetic unit 7. In the above state, it is determined that the wafer at the positions of the first chip and the next chip is undulated by 10 μm in the upward direction from the data in the memory. Therefore, when such a contact state continues, for example, twice in a row (generally n times), the arithmetic unit 7 resets the rough raised surface of the wafer mounting table 1 at that point to be lower, for example, by 10 μm.

【0008】次のチップを測定する場合は、前回定めら
れた粗上昇面にウエハ載置台1を粗上昇させその後ウエ
ハ載置台1を10μmづつ一定回数(例えば、6回)微
上昇させることによってプローブ針可動部3とチップ電
極5の接触を高精度にかつ迅速に行うことができる。ウ
エハ載置台1をプローブ針とチップが接触後、例えば5
0μm以上上昇させると、チップ検査時のオーバードラ
イブ量、例えば80μmと重なりプローブ針可動部3と
チップ電極5との接触が強すぎることになり、電極また
はプローブ針可動部が損傷するおそれが生じる。このよ
うに、半導体ウエハが、例えば10μm高い方向にうね
っている場合が連続2回(一般的にはn回)続いた場合
には、ウエハ載置台1の新しい粗上昇面が10μm下が
るように設定し、また、半導体ウエハが低い方向にうね
っている場合には、ウエハ載置台1の粗上昇面を所定高
さ分上昇させた新しい粗上昇面に再設定する。この後に
チップの電気的特性の測定が行われる。
When measuring the next chip, the wafer mounting table 1 is roughly raised to the previously determined rough rising surface, and then the wafer mounting stage 1 is slightly raised by 10 μm a certain number of times (for example, 6 times) to raise the probe. The needle movable part 3 and the tip electrode 5 can be brought into contact with high precision and quickly. After the probe needle and the chip come into contact with the wafer mounting table 1, for example, 5
If it is increased by more than 0 μm, the contact between the probe needle movable portion 3 and the tip electrode 5 will be too strong due to the overdrive amount during chip inspection, for example, 80 μm, and there is a risk that the electrode or the probe needle movable portion may be damaged. In this way, if the semiconductor wafer is undulated in a higher direction by, for example, 10 μm twice in a row (generally n times), the new rough raised surface of the wafer mounting table 1 is set to be lowered by 10 μm. However, if the semiconductor wafer is undulating in a lower direction, the rough raised surface of the wafer mounting table 1 is reset to a new rough raised surface raised by a predetermined height. After this, the electrical characteristics of the chip are measured.

【0009】上記に、プローブ針可動部3とチップ電極
5との接触検出について述べた。実際の半導体ウエハの
チップの電気的特性の測定は、プローブ針可動部3がチ
ップ電極5に接触した後、さらにプローブ針可動部3に
適当なオーバードライブ(プローブ針とウエハを例えば
、80μm近づける)を行いウエハ載置台移動装置9を
上方に押し上げた後に行われる。このオーバドライブに
よって、プローブ針可動部3はチップ電極5に食い込み
、チップ電極5の酸化膜を破り確実な接触が得られる。 上述したように、ウエハ2のうねりがだんだん上昇して
いるときはウエハ載置台1の粗上昇面をだんだん下降し
、うねりがだんだん下降しているときはウエハ載置台1
の粗上昇面をだんだん上昇するように制御されるので、
半導体ウエハ2上のチップ電極5とプローブ針可動部3
との接触圧力は常に適当な値になるように調整される。
The detection of contact between the probe needle movable part 3 and the tip electrode 5 has been described above. In actual measurement of the electrical characteristics of a semiconductor wafer chip, after the probe needle movable part 3 contacts the chip electrode 5, the probe needle movable part 3 is further overdriven (by bringing the probe needle and the wafer closer by, for example, 80 μm). This is performed after the wafer mounting table moving device 9 is pushed upward. Due to this overdrive, the probe needle movable part 3 bites into the tip electrode 5, breaks the oxide film of the tip electrode 5, and secures contact. As mentioned above, when the waviness of the wafer 2 is gradually rising, the rough rising surface of the wafer mounting table 1 is gradually lowered, and when the waviness is gradually descending, the wafer mounting table 1 is moved downward.
It is controlled so that the rough rising surface of
Chip electrode 5 on semiconductor wafer 2 and probe needle movable part 3
The contact pressure is always adjusted to an appropriate value.

【0010】0010

【発明の効果】以上説明したように、本発明によれば、
半導体ウエハにうねりがあっても、半導体ウエハ検査装
置がウエハプローバのプローブ針が常にそのうねりに追
随して、ウエハの面に適当な圧力で接触するように適応
的に追随する。しかも粗上昇面を前もって設定しておく
ので、チップ測定の際、プローブ針可動部を迅速に半導
体ウエハのチップ面上に持っていくことができる。また
、ウエハのうねりにかかわらず、検査対象のチップ上で
電極とプローブ針可動部が常に適当な圧力で接触するの
で電極またはプローブ針可動部が強すぎる圧力のために
損傷することを防止できる。
[Effects of the Invention] As explained above, according to the present invention,
Even if the semiconductor wafer has undulations, the semiconductor wafer inspection apparatus adaptively follows the undulations so that the probe needle of the wafer prober always follows the undulations and contacts the surface of the wafer with appropriate pressure. Furthermore, since the rough rising surface is set in advance, the probe needle movable portion can be quickly brought onto the chip surface of the semiconductor wafer during chip measurement. Furthermore, regardless of the waviness of the wafer, the electrodes and the probe needle movable section are always in contact with each other with appropriate pressure on the chip to be inspected, so that damage to the electrode or the probe needle movable section due to excessive pressure can be prevented.

【図面の簡単な説明】[Brief explanation of the drawing]

【図1】本発明の一実施例の半導体ウエハ検査装置を示
すブロック図である。
FIG. 1 is a block diagram showing a semiconductor wafer inspection apparatus according to an embodiment of the present invention.

【図2】半導体ウエハのうねりの状態を示す図である。FIG. 2 is a diagram showing the state of waviness of a semiconductor wafer.

【図3】従来技術の半導体ウエハ検査装置のウエハプロ
ーバの基板およびプローブ針を示す図である。
FIG. 3 is a diagram showing a substrate and a probe needle of a wafer prober of a conventional semiconductor wafer inspection apparatus.

【図4】従来技術の半導体ウエハ検査装置のウエハプロ
ーバのプローブ針の詳細構造を示す図である。
FIG. 4 is a diagram showing the detailed structure of a probe needle of a wafer prober of a conventional semiconductor wafer inspection apparatus.

【符号の説明】[Explanation of symbols]

1  ウエハ載置台 2  半導体ウエハ 3  プローブ針可動部 4  プローブ針固定部 5  電極 6  接触検出部 7  演算装置 8  制御装置 9  ウエハ載置台移動装置 1 Wafer mounting table 2 Semiconductor wafer 3. Probe needle movable part 4 Probe needle fixing part 5 Electrode 6 Contact detection part 7 Arithmetic device 8 Control device 9 Wafer mounting table moving device

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】半導体ウエハ上に形成された複数の半導体
チップの電気的特性を順次検査する半導体ウエハ検査装
置において、半導体ウエハ上のチップに接触するプロー
ブ針と、前記プローブ針の接触状態を検出する接触検出
部と、前記接触検出部の結果に従って演算を行う演算装
置と、半導体ウエハを移動させるウエハ載置台移動装置
と、前記演算装置の結果によって前記ウエハ載置台移動
装置の移動を制御する制御装置とを備え、半導体ウエハ
のうねりに追随してプローブ針の圧力をほぼ一定になる
ように前記ウエハ載置台移動装置を制御することを特徴
とする半導体ウエハ検査装置。
1. A semiconductor wafer inspection device that sequentially inspects the electrical characteristics of a plurality of semiconductor chips formed on a semiconductor wafer, wherein a contact state between a probe needle that contacts a chip on the semiconductor wafer and the probe needle is detected. a wafer platform moving device that moves a semiconductor wafer; and a control device that controls movement of the wafer platform moving device based on the results of the computing device. 1. A semiconductor wafer inspection apparatus, comprising: a semiconductor wafer inspection apparatus, wherein the wafer stage moving apparatus is controlled so that the pressure of the probe needle is substantially constant in accordance with the waviness of the semiconductor wafer.
JP7205491A 1991-03-13 1991-03-13 Inspection apparatus for semiconductor wafer Pending JPH04284640A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7205491A JPH04284640A (en) 1991-03-13 1991-03-13 Inspection apparatus for semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7205491A JPH04284640A (en) 1991-03-13 1991-03-13 Inspection apparatus for semiconductor wafer

Publications (1)

Publication Number Publication Date
JPH04284640A true JPH04284640A (en) 1992-10-09

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ID=13478290

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7205491A Pending JPH04284640A (en) 1991-03-13 1991-03-13 Inspection apparatus for semiconductor wafer

Country Status (1)

Country Link
JP (1) JPH04284640A (en)

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