JPH04278589A - Manufacture of infrared sensor - Google Patents
Manufacture of infrared sensorInfo
- Publication number
- JPH04278589A JPH04278589A JP3063794A JP6379491A JPH04278589A JP H04278589 A JPH04278589 A JP H04278589A JP 3063794 A JP3063794 A JP 3063794A JP 6379491 A JP6379491 A JP 6379491A JP H04278589 A JPH04278589 A JP H04278589A
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- cdte
- substrate
- hgcdte
- sensing element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 239000013078 crystal Substances 0.000 claims abstract description 70
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 claims abstract description 43
- 229910004613 CdTe Inorganic materials 0.000 claims abstract description 40
- 239000000463 material Substances 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims description 41
- 238000000034 method Methods 0.000 claims description 11
- 239000007791 liquid phase Substances 0.000 claims description 8
- 239000007788 liquid Substances 0.000 abstract description 2
- 229910052594 sapphire Inorganic materials 0.000 description 11
- 239000010980 sapphire Substances 0.000 description 11
- 239000000289 melt material Substances 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000002109 crystal growth method Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910000673 Indium arsenide Inorganic materials 0.000 description 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000001931 thermography Methods 0.000 description 1
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は赤外線検知素子の製造方
法に関する。赤外線センサは目標物体に接触することな
く物体の存在、形状、温度、組成等を知ることができる
ため、人工衛星による気象観測、防犯、防災、地質・資
源調査、赤外線サーモグラフィによる医療用等の多くの
分野で用いられている。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing an infrared sensing element. Infrared sensors can detect the existence, shape, temperature, composition, etc. of a target object without coming into contact with it, so it is used in many applications such as weather observation using artificial satellites, crime prevention, disaster prevention, geological and resource surveys, and medical use using infrared thermography. It is used in the field of
【０００２】このような赤外線センサのうち、二元又は
三元化合物半導体を利用した光電効果型センサは、感度
が高く、応答速度も速いが、通常素子の概略液体窒素温
度での冷却が必要である。Among such infrared sensors, photoelectric effect sensors using binary or ternary compound semiconductors have high sensitivity and fast response speed, but usually require cooling to approximately the liquid nitrogen temperature of the element. be.
【０００３】光電効果型センサは、光導電型、光起電力
型、ＭＩＳ型に大別されるが、このうち光導電型センサ
を構成する素子としてＨｇＣｄＴｅ結晶がよく用いられ
る。ＨｇＣｄＴｅ結晶は通常液相エピタキシャル結晶成
長方法により製造され、この結晶を加工して赤外線検知
素子として使用している。この赤外線検知素子は、光照
射時の抵抗変化を利用したものであり、半導体素子であ
るためにその抵抗が温度とともに変化する。Photoelectric effect sensors are broadly classified into photoconductive type, photovoltaic type, and MIS type, and among these, HgCdTe crystal is often used as an element constituting the photoconductive type sensor. HgCdTe crystals are usually manufactured by a liquid phase epitaxial crystal growth method, and this crystal is processed and used as an infrared sensing element. This infrared sensing element utilizes a change in resistance upon irradiation with light, and since it is a semiconductor element, its resistance changes with temperature.
【０００４】0004
【従来の技術】従来のＨｇＣｄＴｅ結晶の一般的な結晶
成長方法として、ボートスライド式の液相エピタキシャ
ル結晶成長方法が知られている。即ち、カーボン製ボー
ト内に予め所定組成比に秤量されたＨｇ１−Ｘ ＣｄＸ
Ｔｅからなる結晶成長用のメルト材料を収容し、これ
を結晶成長温度よりも高い所定温度に加熱して結晶成長
用のメルト材料を溶融させる。2. Description of the Related Art A boat slide liquid phase epitaxial crystal growth method is known as a conventional general crystal growth method for HgCdTe crystals. That is, Hg1-X CdX weighed in advance at a predetermined composition ratio in a carbon boat
A melt material for crystal growth made of Te is stored and heated to a predetermined temperature higher than the crystal growth temperature to melt the melt material for crystal growth.
【０００５】そして、カーボン製ボート内に予め収容し
たメルト材料に隣接して収容したＣｄＴｅ基板を溶融し
た結晶成長用メルト材料に接触させ、炉内温度を所定の
結晶成長温度に低下させると、ＣｄＴｅ基板上にＨｇＣ
ｄＴｅ結晶が成長する。[0005] Then, when the CdTe substrate housed adjacent to the melt material previously housed in a carbon boat is brought into contact with the molten melt material for crystal growth and the temperature inside the furnace is lowered to a predetermined crystal growth temperature, CdTe HgC on the substrate
A dTe crystal grows.
【０００６】所定の厚さのＨｇＣｄＴｅ結晶層が形成さ
れた時点で、ＣｄＴｅ基板を収容したカーボン製ボート
をスライドさせることにより、ＣｄＴｅ基板をメルト材
料内から除去して結晶成長を停止させる。[0006] When a HgCdTe crystal layer of a predetermined thickness is formed, the CdTe substrate is removed from the melt material by sliding a carbon boat containing the CdTe substrate to stop crystal growth.
【０００７】これにより、図４（Ａ）に示すように厚さ
約８００μｍのＣｄＴｅ基板２上に厚さ約５０μｍのＨ
ｇＣｄＴｅ結晶４を得ることができる。ＨｇＣｄＴｅ結
晶４の成長温度は約６００℃である。[0007] As a result, as shown in FIG.
gCdTe crystal 4 can be obtained. The growth temperature of the HgCdTe crystal 4 is approximately 600°C.
【０００８】[0008]
【発明が解決しようとする課題】しかし、ＣｄＴｅ基板
２上にＨｇＣｄＴｅ結晶４を成長させるという従来の方
法では、室温におけるＣｄＴｅとＨｇＣｄＴｅの熱膨張
係数の差のために、図４（Ｂ）に示すように、ＣｄＴｅ
基板２上にＨｇＣｄＴｅ結晶４を成長させたウエハが反
るという問題があった。However, in the conventional method of growing HgCdTe crystal 4 on CdTe substrate 2, due to the difference in thermal expansion coefficient between CdTe and HgCdTe at room temperature, As in, CdTe
There was a problem that the wafer on which the HgCdTe crystal 4 was grown on the substrate 2 warped.
【０００９】ちなみに、３００ＫにおけるＣｄＴｅとＨ
ｇＣｄＴｅの熱膨張係数はそれぞれ以下の通りである。
ＣｄＴｅ：４．５×１０−６（Ｋ−１）ＨｇＣｄＴｅ：
５．１×１０−６（Ｋ−１）[0009] By the way, CdTe and H at 300K
The thermal expansion coefficients of gCdTe are as follows. CdTe:4.5×10-6(K-1)HgCdTe:
5.1×10-6 (K-1)
【００１０】即ち、結晶成
長温度である約９００Ｋでは、図４（Ａ）に示すように
平坦なＨｇＣｄＴｅ結晶４が得られているが、これを室
温（約３００Ｋ）に冷却すると、ＨｇＣｄＴｅの熱膨張
係数がＣｄＴｅの熱膨張係数よりも大きいために、図４
（Ｂ）に示すようにＨｇＣｄＴｅ結晶４が反ってしまう
ことになる。That is, at the crystal growth temperature of about 900 K, a flat HgCdTe crystal 4 is obtained as shown in FIG. Because the coefficient is larger than the thermal expansion coefficient of CdTe, Figure 4
As shown in (B), the HgCdTe crystal 4 is warped.
【００１１】このように反ったＨｇＣｄＴｅ結晶４を用
いて赤外線検知素子の素子化プロセスを行うと、ＨｇＣ
ｄＴｅ結晶４上に均一な性能を持つ赤外線検知素子が作
成できないという問題があった。[0011] When the HgCdTe crystal 4 warped in this way is used to fabricate an infrared sensing element, HgC
There was a problem in that an infrared sensing element with uniform performance could not be created on the dTe crystal 4.
【００１２】本発明はこのような点に鑑みてなされたも
のであり、その目的とするところは、室温において反り
のない平坦なＨｇＣｄＴｅ結晶を得ることのできる赤外
線検知素子の製造方法を提供することである。The present invention has been made in view of the above points, and its purpose is to provide a method for manufacturing an infrared sensing element that can obtain a flat HgCdTe crystal without warping at room temperature. It is.
【００１３】[0013]
【課題を解決するための手段】本発明の第１の側面によ
ると、ＣｄＴｅ基板上にＨｇＣｄＴｅ結晶を液相エピタ
キシャル成長させ、該ＨｇＣｄＴｅ結晶を加工して赤外
線検知素子として使用する赤外線検知素子の製造方法に
おいて、前記ＣｄＴｅ基板の裏面側全面に、表面側に成
長させるＨｇＣｄＴｅ結晶の成長温度と概略同一温度で
、ＨｇＣｄＴｅ結晶の熱膨張係数とほぼ同一の熱膨張係
数を有する材料をＨｇＣｄＴｅ結晶とほぼ同一の厚さ形
成することを特徴とする赤外線検知素子の製造方法が提
供される。[Means for Solving the Problems] According to a first aspect of the present invention, a method for manufacturing an infrared sensing element includes growing an HgCdTe crystal on a CdTe substrate by liquid phase epitaxial growth, processing the HgCdTe crystal, and using the HgCdTe crystal as an infrared sensing element. In this step, a material having a coefficient of thermal expansion almost the same as that of the HgCdTe crystal is applied to the entire back surface of the CdTe substrate at approximately the same temperature as the growth temperature of the HgCdTe crystal grown on the front surface. A method of manufacturing an infrared sensing element is provided, which is characterized by forming a thickness.
【００１４】ＣｄＴｅ基板の裏面側全面に形成する代わ
りに、ＣｄＴｅ基板の裏面側外周のみに形成するように
しても良い。[0014] Instead of forming on the entire back surface side of the CdTe substrate, it may be formed only on the outer periphery of the back surface side of the CdTe substrate.
【００１５】本発明の第２の側面によると、ＣｄＴｅ基
板の表面側外周にＣｄＴｅ基板の熱膨張係数より小さい
熱膨張係数を有する材料を所定厚さ形成し、次いでＣｄ
Ｔｅ基板表面側にＨｇＣｄＴｅ結晶を前記所定厚さとほ
ぼ同一厚さ液相エピタキシャル成長させることを特徴と
する赤外線検知素子の製造方法が提供される。According to the second aspect of the present invention, a material having a thermal expansion coefficient smaller than that of the CdTe substrate is formed to a predetermined thickness on the outer periphery of the surface side of the CdTe substrate, and then the CdTe substrate is
There is provided a method for manufacturing an infrared sensing element, characterized in that a HgCdTe crystal is liquid-phase epitaxially grown on the surface side of a Te substrate to a thickness that is substantially the same as the predetermined thickness.
【００１６】[0016]
【作用】第１の側面によると、ＣｄＴｅ基板の裏面側に
形成したＨｇＣｄＴｅ結晶とほぼ同一の熱膨張係数を有
する材料により、室温冷却時に表面側のＨｇＣｄＴｅ結
晶が収縮しようとする力が均衡させられるため、ＨｇＣ
ｄＴｅ結晶の反りが防止される。[Operation] According to the first aspect, the material having almost the same coefficient of thermal expansion as the HgCdTe crystal formed on the back side of the CdTe substrate balances the force that causes the HgCdTe crystal on the front side to contract when cooled to room temperature. Therefore, HgC
Warping of the dTe crystal is prevented.
【００１７】また第２の側面によると、ＣｄＴｅ基板の
表面側外周に形成したＣｄＴｅ基板の熱膨張係数よりも
小さい熱膨張係数を有する材料により、室温冷却時に表
面側のＨｇＣｄＴｅ結晶が収縮しようとする力が均衡さ
せられるため、ＨｇＣｄＴｅ結晶の反りが防止される。According to the second aspect, the HgCdTe crystal on the surface side tends to contract when cooled to room temperature due to the material formed on the outer periphery of the surface side of the CdTe substrate and having a coefficient of thermal expansion smaller than that of the CdTe substrate. Since the forces are balanced, warping of the HgCdTe crystal is prevented.
【００１８】[0018]
【実施例】図１は本発明の第１実施例を示している。こ
の実施例においては、厚さ約８００μｍのＣｄＴｅ基板
１２の裏面側に５．３×１０−６／Ｋの熱膨張係数を有
するサファイア１６を約６００℃でＣｄＴｅ基板１２に
貼付する。サファイア１６の厚さは約５０μｍである。DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 shows a first embodiment of the present invention. In this example, sapphire 16 having a thermal expansion coefficient of 5.3 x 10-6/K is attached to the back side of the CdTe substrate 12 with a thickness of about 800 .mu.m at about 600.degree. The thickness of sapphire 16 is approximately 50 μm.
【００１９】次いで、図１（Ａ）に示すようにＣｄＴｅ
基板１２の表面側に約６００℃でＨｇＣｄＴｅ結晶１４
を約５０μｍの厚さまで成長させる。Next, as shown in FIG. 1(A), CdTe
A HgCdTe crystal 14 is formed on the surface side of the substrate 12 at about 600°C.
is grown to a thickness of approximately 50 μm.
【００２０】ＨｇＣｄＴｅ結晶１４の熱膨張係数は５．
１×１０−６／Ｋでサファイア１６の熱膨張係数に近い
ため、室温に冷却すると図１（Ｂ）に示すように、Ｈｇ
ＣｄＴｅ結晶１４、ＣｄＴｅ基板１２及びサファイア１
６内に矢印で示すような内部応力が発生し、ＨｇＣｄＴ
ｅ結晶１４が収縮しようとする力が均衡させられるため
、反りのない平坦なＨｇＣｄＴｅ結晶１４を得ることが
できる。The coefficient of thermal expansion of the HgCdTe crystal 14 is 5.
Since the coefficient of thermal expansion is 1×10-6/K, which is close to that of sapphire 16, when it is cooled to room temperature, Hg
CdTe crystal 14, CdTe substrate 12 and sapphire 1
6, internal stress as shown by the arrow occurs, and HgCdT
Since the forces that tend to cause the e-crystal 14 to contract are balanced, it is possible to obtain a flat HgCdTe crystal 14 without warping.
【００２１】ＣｄＴｅ基板１２上にＨｇＣｄＴｅ結晶１
４が得られたならば、基板１２と反対側をサファイア基
板に貼付し、エッチング等によりサファイア１６及びＣ
ｄＴｅ基板１２を落としてから、ＨｇＣｄＴｅ結晶１４
を約１５μｍ厚まで研磨加工して赤外線検知素子を製造
する。HgCdTe crystal 1 on CdTe substrate 12
4 is obtained, the side opposite to the substrate 12 is attached to a sapphire substrate, and sapphire 16 and C are formed by etching or the like.
After dropping the dTe substrate 12, the HgCdTe crystal 14 is
An infrared detecting element is manufactured by polishing to a thickness of approximately 15 μm.
【００２２】この実施例ではＣｄＴｅ基板１２の裏面側
にサファイア１６を貼付しているが、約６００℃で熱膨
張係数５．２×１０−６／ＫのＧａＰ又は熱膨張係数５
．２×１０−６／ＫのＩｎＡｓを結晶成長させるように
しても良い。In this embodiment, sapphire 16 is attached to the back side of the CdTe substrate 12, but GaP with a thermal expansion coefficient of 5.2 x 10-6/K at about 600°C or sapphire 16 with a thermal expansion coefficient of 5.
．． InAs crystals of 2×10 −6 /K may be grown.
【００２３】図２は本発明の第２実施例を示しており、
この実施例はＨｇＣｄＴｅの結晶成長温度である約６０
０℃でＣｄＴｅ基板１２の裏面側の外周部のみにサファ
イア１８を貼付し、次いで図２（Ａ）に示すように基板
１２の表面側に約６００℃でＨｇＣｄＴｅ結晶１４を成
長させるようにする。FIG. 2 shows a second embodiment of the present invention,
This example is about 60°C, which is the crystal growth temperature of HgCdTe.
Sapphire 18 is attached only to the outer periphery of the back side of CdTe substrate 12 at 0°C, and then HgCdTe crystal 14 is grown on the front side of substrate 12 at about 600°C as shown in FIG. 2(A).
【００２４】この実施例においても、室温に冷却すると
図２（Ｂ）の矢印に示すような内部応力が働くため、Ｈ
ｇＣｄＴｅ結晶１４が収縮しようとする力を均衡させる
ことができ、反りのない平坦なＨｇＣｄＴｅ結晶１４を
得ることができる。In this example as well, when cooled to room temperature, internal stress as shown by the arrow in FIG. 2(B) acts, so H
The force that causes the gCdTe crystal 14 to shrink can be balanced, and a flat HgCdTe crystal 14 without warping can be obtained.
【００２５】第２実施例において、サファイア１８を基
板１２の裏面側外周に貼付する代わりに、中央部をマス
クして基板１２の裏面側外周部にＧａＰ又はＩｎＡｓを
結晶成長させるようにしても良い。In the second embodiment, instead of attaching the sapphire 18 to the outer periphery of the back side of the substrate 12, the central part may be masked and GaP or InAs crystals may be grown on the outer periphery of the back side of the substrate 12. .
【００２６】図３は本発明の第３実施例を示しており、
この実施例においてはＣｄＴｅ基板１２の表面側外周に
基板１２の熱膨張係数よりも小さい熱膨張係数を有する
材料、例えば熱膨張係数４．２×１０−６／Ｋを有する
Ｓｉを貼付する。次いで、図３（Ａ）に示すようにＣｄ
Ｔｅ基板１２の表面側に約６００℃でＨｇＣｄＴｅ結晶
１４を成長させる。FIG. 3 shows a third embodiment of the present invention,
In this embodiment, a material having a thermal expansion coefficient smaller than that of the substrate 12, such as Si having a thermal expansion coefficient of 4.2 x 10-6/K, is attached to the outer periphery of the CdTe substrate 12 on the front side. Next, as shown in FIG. 3(A), Cd
HgCdTe crystal 14 is grown on the surface side of Te substrate 12 at about 600°C.
【００２７】室温に冷却すると、図３（Ｂ）の矢印に示
すような内部応力が働くため、ＨｇＣｄＴｅが収縮しよ
うとする力が均衡され、反りのない平坦なＨｇＣｄＴｅ
結晶１４を得ることができる。When cooled to room temperature, internal stress acts as shown by the arrow in FIG.
Crystal 14 can be obtained.
【００２８】[0028]
【発明の効果】本発明によると、室温において反りのな
い平坦なＨｇＣｄＴｅ結晶を得ることができるため、Ｈ
ｇＣｄＴｅ結晶の全面に均一な性能を有する赤外線検知
素子を作成できるという効果を奏する。Effects of the Invention According to the present invention, a flat HgCdTe crystal without warping can be obtained at room temperature.
This has the effect of making it possible to create an infrared sensing element having uniform performance over the entire surface of the gCdTe crystal.
【図１】第１実施例断面図である。FIG. 1 is a sectional view of a first embodiment.
【図２】第２実施例断面図である。FIG. 2 is a sectional view of a second embodiment.
【図３】第３実施例断面図である。FIG. 3 is a sectional view of a third embodiment.
【図４】従来例断面図である。FIG. 4 is a sectional view of a conventional example.
２，１２ ＣｄＴｅ基板 ４，１４ ＨｇＣｄＴｅ結晶 １６，１８ サファイア ２０ Ｓｉ 2,12 CdTe substrate 4,14 HgCdTe crystal 16,18 Sapphire 20 Si
Claims (3)
ｅ結晶（１４）を液相エピタキシャル成長させ、該Ｈｇ
ＣｄＴｅ結晶（１４）を加工して赤外線検知素子として
使用する赤外線検知素子の製造方法において、前記Ｃｄ
Ｔｅ基板（１２）の裏面側全面に、表面側に成長させる
ＨｇＣｄＴｅ結晶（１４）の成長温度と概略同一温度で
、ＨｇＣｄＴｅ結晶（１４）の熱膨張係数とほぼ同一の
熱膨張係数を有する材料（１６）をＨｇＣｄＴｅ結晶（
１４）とほぼ同一の厚さ形成することを特徴とする赤外
線検知素子の製造方法。[Claim 1] HgCdT on a CdTe substrate (12)
The e-crystal (14) is grown by liquid phase epitaxial growth, and the Hg
In the method for manufacturing an infrared sensing element in which a CdTe crystal (14) is processed and used as an infrared sensing element, the CdTe crystal (14) is processed.
A material having a coefficient of thermal expansion that is approximately the same as that of the HgCdTe crystal (14) at approximately the same temperature as the growth temperature of the HgCdTe crystal (14) grown on the front side is applied to the entire back side of the Te substrate (12). 16) with HgCdTe crystal (
14) A method for manufacturing an infrared sensing element, characterized in that it is formed to have substantially the same thickness as 14).
晶（１４）を液相エピタキシャル成長させ、該ＨｇＣｄ
Ｔｅ結晶（１４）を加工して赤外線検知素子として使用
する赤外線検知素子の製造方法において、前記ＣｄＴｅ
基板（１２）の裏面側外周に、表面側に成長させるＨｇ
ＣｄＴｅ結晶（１４）の成長温度と概略同一温度で、Ｈ
ｇＣｄＴｅ結晶（１４）の熱膨張係数とほぼ同一の熱膨
張係数を有する材料（１８）をＨｇＣｄＴｅ結晶（１４
）とほぼ同一の厚さ形成することを特徴とする赤外線検
知素子の製造方法。2. A HgCdTe crystal (14) is grown on a CdTe substrate (12) by liquid phase epitaxial growth.
In the method for manufacturing an infrared sensing element in which a Te crystal (14) is processed and used as an infrared sensing element, the CdTe
Hg grown on the outer periphery of the back side of the substrate (12) on the front side
At approximately the same temperature as the growth temperature of CdTe crystal (14), H
A material (18) having a coefficient of thermal expansion that is almost the same as that of the gCdTe crystal (14) is used as a HgCdTe crystal (14).
) A method for manufacturing an infrared sensing element, characterized in that the element is formed to have almost the same thickness.
晶（１４）を液相エピタキシャル成長させ、該ＨｇＣｄ
Ｔｅ結晶（１４）を加工して赤外線検知素子として使用
する赤外線検知素子の製造方法において、前記ＣｄＴｅ
基板（１２）の表面側外周にＣｄＴｅ基板（１２）の熱
膨張係数より小さい熱膨張係数を有する材料（２０）を
所定厚さ形成し、次いでＣｄＴｅ基板（１２）表面側に
ＨｇＣｄＴｅ結晶（１４）を前記所定厚さとほぼ同一厚
さ液相エピタキシャル成長させることを特徴とする赤外
線検知素子の製造方法。3. A HgCdTe crystal (14) is grown on a CdTe substrate (12) by liquid phase epitaxial growth,
In the method for manufacturing an infrared sensing element in which a Te crystal (14) is processed and used as an infrared sensing element, the CdTe
A material (20) having a thermal expansion coefficient smaller than that of the CdTe substrate (12) is formed to a predetermined thickness on the outer periphery of the surface side of the substrate (12), and then a HgCdTe crystal (14) is formed on the surface side of the CdTe substrate (12). A method for manufacturing an infrared sensing element, characterized in that the method comprises growing the liquid phase epitaxially to a thickness substantially the same as the predetermined thickness.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3063794A JPH04278589A (en) | 1991-03-06 | 1991-03-06 | Manufacture of infrared sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3063794A JPH04278589A (en) | 1991-03-06 | 1991-03-06 | Manufacture of infrared sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04278589A true JPH04278589A (en) | 1992-10-05 |
Family
ID=13239642
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3063794A Withdrawn JPH04278589A (en) | 1991-03-06 | 1991-03-06 | Manufacture of infrared sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04278589A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013069492A1 (en) * | 2011-11-09 | 2013-05-16 | シャープ株式会社 | Bypass diode |
-
1991
- 1991-03-06 JP JP3063794A patent/JPH04278589A/en not_active Withdrawn
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013069492A1 (en) * | 2011-11-09 | 2013-05-16 | シャープ株式会社 | Bypass diode |
| US9214573B2 (en) | 2011-11-09 | 2015-12-15 | Sharp Kabushiki Kaisha | Bypass diode |
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