JPH0426825A - Thin-film transistor array and production thereof - Google Patents

Thin-film transistor array and production thereof

Info

Publication number
JPH0426825A
JPH0426825A JP13175490A JP13175490A JPH0426825A JP H0426825 A JPH0426825 A JP H0426825A JP 13175490 A JP13175490 A JP 13175490A JP 13175490 A JP13175490 A JP 13175490A JP H0426825 A JPH0426825 A JP H0426825A
Authority
JP
Japan
Prior art keywords
gate
bus
electrode
semiconductor film
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13175490A
Other versions
JP2628928B2 (en
Inventor
Satoru Hayasaka
Original Assignee
Alps Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alps Electric Co Ltd filed Critical Alps Electric Co Ltd
Priority to JP13175490A priority Critical patent/JP2628928B2/en
Publication of JPH0426825A publication Critical patent/JPH0426825A/en
Application granted granted Critical
Publication of JP2628928B2 publication Critical patent/JP2628928B2/en
Anticipated expiration legal-status Critical
Application status is Expired - Lifetime legal-status Critical

Links

Abstract

PURPOSE: To lower the resistance value of gate wirings and to lessen the delay in switching operation by forming a gate bus and a drain bus on a semiconductor film and connecting the gate bus and a gate electrode as well as a drain electrode and the drain bus via a contact hole penetrated through a gate insulating film and the semiconductor film.
CONSTITUTION: The gate electrode 4 and the drain bus 2 are formed on a substrate 26 and a picture element electrode 1 is formed. The gate insulating film 10 is formed on the gate electrode 4 and the semiconductor film 9 is laminated on this gate insulating film. Further, the gate bus 3, the drain electrode 5 and the source electrode 6 are provided on this semiconductor film 9. The gate bus 3 is connected via the contact hole 8 bored in the semiconductor film 9 and the gate insulating film 10. The drain electrode 5 is connected via the contact hole 8 bored in the semiconductor film 9 and the gate insulating film 10 to the drain bus 2. The resistance of the gate wiring is lowered in this way and the delay in the switching operation of the thin-film transistor is decreased.
COPYRIGHT: (C)1992,JPO&Japio
JP13175490A 1990-05-22 1990-05-22 Thin film transistor array and a manufacturing method thereof Expired - Lifetime JP2628928B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13175490A JP2628928B2 (en) 1990-05-22 1990-05-22 Thin film transistor array and a manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13175490A JP2628928B2 (en) 1990-05-22 1990-05-22 Thin film transistor array and a manufacturing method thereof

Publications (2)

Publication Number Publication Date
JPH0426825A true JPH0426825A (en) 1992-01-30
JP2628928B2 JP2628928B2 (en) 1997-07-09

Family

ID=15065410

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13175490A Expired - Lifetime JP2628928B2 (en) 1990-05-22 1990-05-22 Thin film transistor array and a manufacturing method thereof

Country Status (1)

Country Link
JP (1) JP2628928B2 (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07244298A (en) * 1994-03-07 1995-09-19 G T C:Kk Active-matrix liquid crystal display
EP1045451A2 (en) * 1999-04-12 2000-10-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for fabricating the same
KR100775130B1 (en) * 1999-04-12 2007-11-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR100775129B1 (en) * 1999-04-12 2007-11-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
WO2011004723A1 (en) * 2009-07-10 2011-01-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method the same
JP2011023728A (en) * 2009-07-17 2011-02-03 Beijing Boe Optoelectronics Technology Co Ltd Tft-lcd array substrate and manufacturing method thereof
JP2013219348A (en) * 2012-03-14 2013-10-24 Semiconductor Energy Lab Co Ltd Semiconductor device
JP2018533211A (en) * 2015-10-10 2018-11-08 深▲せん▼市華星光電技術有限公司Shenzhen China Star Optoelectronics Technology Co., Ltd. Array substrate and manufacturing method thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6191688A (en) * 1984-10-11 1986-05-09 Matsushita Electric Ind Co Ltd Liquid crystal display panel
JPS63253391A (en) * 1987-04-09 1988-10-20 Alps Electric Co Ltd Thin film transistor array
JPS6489369A (en) * 1987-09-29 1989-04-03 Sharp Kk Thin film transistor
JPH02157729A (en) * 1988-12-09 1990-06-18 Matsushita Electric Ind Co Ltd Substrate for thin-film transistor array

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6191688A (en) * 1984-10-11 1986-05-09 Matsushita Electric Ind Co Ltd Liquid crystal display panel
JPS63253391A (en) * 1987-04-09 1988-10-20 Alps Electric Co Ltd Thin film transistor array
JPS6489369A (en) * 1987-09-29 1989-04-03 Sharp Kk Thin film transistor
JPH02157729A (en) * 1988-12-09 1990-06-18 Matsushita Electric Ind Co Ltd Substrate for thin-film transistor array

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07244298A (en) * 1994-03-07 1995-09-19 G T C:Kk Active-matrix liquid crystal display
US8071981B2 (en) 1999-04-12 2011-12-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for fabricating the same
EP1045451A3 (en) * 1999-04-12 2006-08-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for fabricating the same
KR100775130B1 (en) * 1999-04-12 2007-11-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR100775129B1 (en) * 1999-04-12 2007-11-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US7456430B1 (en) 1999-04-12 2008-11-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for fabricating the same
US7855380B2 (en) 1999-04-12 2010-12-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for fabricating the same
EP1045451A2 (en) * 1999-04-12 2000-10-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for fabricating the same
US8129721B2 (en) 1999-04-12 2012-03-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for fabricating the same
WO2011004723A1 (en) * 2009-07-10 2011-01-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method the same
US9379141B2 (en) 2009-07-10 2016-06-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method the same
US8797472B2 (en) 2009-07-17 2014-08-05 Beijing Boe Optoelectronics Technology Co., Ltd. TFT-LCD array substrate and manufacturing method thereof
JP2011023728A (en) * 2009-07-17 2011-02-03 Beijing Boe Optoelectronics Technology Co Ltd Tft-lcd array substrate and manufacturing method thereof
JP2013219348A (en) * 2012-03-14 2013-10-24 Semiconductor Energy Lab Co Ltd Semiconductor device
JP2018533211A (en) * 2015-10-10 2018-11-08 深▲せん▼市華星光電技術有限公司Shenzhen China Star Optoelectronics Technology Co., Ltd. Array substrate and manufacturing method thereof

Also Published As

Publication number Publication date
JP2628928B2 (en) 1997-07-09

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