JPH04260327A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPH04260327A JPH04260327A JP2189191A JP2189191A JPH04260327A JP H04260327 A JPH04260327 A JP H04260327A JP 2189191 A JP2189191 A JP 2189191A JP 2189191 A JP2189191 A JP 2189191A JP H04260327 A JPH04260327 A JP H04260327A
- Authority
- JP
- Japan
- Prior art keywords
- film
- bonding pad
- wire
- semiconductor device
- resin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 22
- 238000002161 passivation Methods 0.000 claims abstract description 13
- 229920001721 polyimide Polymers 0.000 claims abstract description 10
- 239000009719 polyimide resin Substances 0.000 claims abstract description 8
- 239000011347 resin Substances 0.000 claims abstract description 7
- 229920005989 resin Polymers 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 229920002050 silicone resin Polymers 0.000 claims description 2
- 239000011229 interlayer Substances 0.000 abstract description 3
- 150000004767 nitrides Chemical class 0.000 abstract description 3
- 229910052710 silicon Inorganic materials 0.000 abstract description 2
- 239000010703 silicon Substances 0.000 abstract description 2
- 239000004593 Epoxy Substances 0.000 abstract 1
- 230000002093 peripheral effect Effects 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
- 239000003822 epoxy resin Substances 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は半導体装置に関し、特に
ボンディングパッド近傍のパッシベーション膜の構造に
関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, and more particularly to the structure of a passivation film near a bonding pad.
【０００２】0002
【従来の技術】従来の半導体装置は図２に示すように、
回路素子が形成された半導体基板１上に、配線に接続さ
れたボンディングパッド２と層間膜としての酸化膜３を
形成したのち、全面に窒化膜等のパッシベーション膜４
を形成し、次でボンディングパッド２上のパッシベーシ
ョン膜４を除去し、金等のワイヤー５をボンディングし
た構造となっていた。ワイヤー５をボンディングしたボ
ンディングパッド２の表面は、コーティングを施すこと
なく、エポキシ樹脂等による外装封止が実施されていた
。[Prior Art] A conventional semiconductor device, as shown in FIG.
After forming bonding pads 2 connected to wiring and an oxide film 3 as an interlayer film on a semiconductor substrate 1 on which circuit elements are formed, a passivation film 4 such as a nitride film is formed on the entire surface.
was formed, then the passivation film 4 on the bonding pad 2 was removed, and a wire 5 made of gold or the like was bonded. The surface of the bonding pad 2 to which the wire 5 was bonded was sealed with an epoxy resin or the like without being coated.
【０００３】0003
【発明が解決しようとする課題】上述した従来の半導体
装置におけるパッシベーション膜の構造では、高湿度の
環境における半導体装置の使用により、何らかの原因で
半導体回路素子の周辺に水分等が浸入し、ボンディング
パッドの表面がコーティングされていない為に、ボンデ
ィングパッドの溶解が起る。このため、ワイヤーのルー
ズコンタクトあるいは断続等を招き、半導体装置の信頼
性が低下するという問題点があった。[Problems to be Solved by the Invention] In the structure of the passivation film in the conventional semiconductor device described above, when the semiconductor device is used in a high humidity environment, moisture etc. may infiltrate around the semiconductor circuit element for some reason, causing bonding pads to deteriorate. Dissolution of the bonding pad occurs because the surface of the bonding pad is not coated. For this reason, there is a problem that loose contact or disconnection of wires occurs, and the reliability of the semiconductor device decreases.
【０００４】0004
【課題を解決するための手段】本発明の半導体装置は、
半導体基板上に形成されたボンディングパッドと、この
ボンディングパッドの周囲を覆うパッシベーション膜と
、前記ボンディングパッド上に接続されたワイヤーと、
少くともこのワイヤーの接続部を含む前記ボンディング
パッド上に形成された樹脂膜とを含むものである。[Means for Solving the Problems] A semiconductor device of the present invention includes:
A bonding pad formed on a semiconductor substrate, a passivation film surrounding the bonding pad, and a wire connected to the bonding pad,
and a resin film formed on the bonding pad including at least the connection portion of the wire.
【０００５】[0005]
【実施例】次に、本発明の実施例について図面を参照し
て説明する。図１は本発明の一実施例の断面図である。Embodiments Next, embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a sectional view of one embodiment of the present invention.
【０００６】図１において、回路素子が形成されたシリ
コン等からなる半導体基板１上にはボンディングパッド
２と層間膜としての酸化膜３が形成されている。そして
この酸化膜３上には、ボンディングパッド２の周囲を覆
う窒化膜等からなるパッシベーション膜４が形成されて
おり、ボンディングパッド２の中央部にはワイヤー５が
ボンディングされている。そして、特にこのワイヤー５
の接続部を含むパッシベーション膜４上にはポリイミド
樹脂膜６が形成されている。エポキシ樹脂の外装封止は
このポリイミド樹脂膜６の上に実施される。In FIG. 1, bonding pads 2 and an oxide film 3 as an interlayer film are formed on a semiconductor substrate 1 made of silicon or the like on which circuit elements are formed. A passivation film 4 made of a nitride film or the like is formed on the oxide film 3 to cover the periphery of the bonding pad 2, and a wire 5 is bonded to the center of the bonding pad 2. And especially this wire 5
A polyimide resin film 6 is formed on the passivation film 4 including the connection portion. Exterior sealing with epoxy resin is performed on this polyimide resin film 6.
【０００７】このように構成された本実施例によれば、
少くともボンディングパッド２上がエポキシ樹脂に比べ
弾力性のあるポリイミド樹脂膜６により覆われているた
め、耐湿性が向上する。特にパッシベーション膜４の全
面を覆うようにした場合は、パッシベーション膜４のひ
び割れによる耐湿性の劣化を補うことができるので、半
導体装置の信頼性はより向上したものとなる。ポリイミ
ド樹脂膜６は、ワイヤー５をボンディングした半導体チ
ップ上にディスペンサーによりポリイミド樹脂を摘下す
ることにより、５〜１０μｍの厚さに形成できる。According to this embodiment configured as described above,
Since at least the top of the bonding pad 2 is covered with the polyimide resin film 6, which is more elastic than epoxy resin, moisture resistance is improved. In particular, when the entire surface of the passivation film 4 is covered, deterioration in moisture resistance due to cracks in the passivation film 4 can be compensated for, thereby further improving the reliability of the semiconductor device. The polyimide resin film 6 can be formed to a thickness of 5 to 10 μm by applying polyimide resin onto the semiconductor chip to which the wire 5 is bonded using a dispenser.
【０００８】本発明をフォトカプラに適用した場合、プ
ッシャーフッカーテストにおける寿命時間を約４倍に向
上させることができた。When the present invention was applied to a photocoupler, the life time in the Pusher-Hooker test could be improved by about four times.
【０００９】なお、上記実施例においてはボンディング
パッド上を覆う樹脂膜としてポリイミド膜を用いた場合
について説明したが、シリコン樹脂膜を用いてもよい。[0009] In the above embodiment, a polyimide film is used as the resin film covering the bonding pad, but a silicone resin film may also be used.
【００１０】0010
【発明の効果】以上説明した様に本発明は、少くともワ
イヤーの接続部を含むボンディングパッド上を樹脂膜で
覆うことにより、半導体回路素子周辺ヘの水分の浸入に
よるボンディングパッドの溶解を防止できるため、半導
体装置の高湿度環境における使用の信頼性を向上させる
ことができる。[Effects of the Invention] As explained above, the present invention can prevent the bonding pad from dissolving due to moisture intrusion into the periphery of the semiconductor circuit element by covering the bonding pad including at least the wire connection portion with a resin film. Therefore, the reliability of use of the semiconductor device in a high humidity environment can be improved.
【図１】本発明の一実施例の断面図である。FIG. 1 is a sectional view of one embodiment of the present invention.
【図２】従来の半導体装置の一例の断面図である。FIG. 2 is a cross-sectional view of an example of a conventional semiconductor device.
１ 半導体基板 ２ ボンディングパッド ３ 酸化膜 ４ パッシベーション膜 ５ ワイヤー ６ ポリイミド樹脂膜 1 Semiconductor substrate 2 Bonding pad 3 Oxide film 4 Passivation film 5 Wire 6 Polyimide resin film
Claims (2)
グパッドと、このボンディングパッドの周囲を覆うパッ
シベーション膜と、前記ボンディングパッド上に接続さ
れたワイヤーと、少くともこのワイヤーの接続部を含む
前記ボンディングパッド上に形成された樹脂膜とを含む
ことを特徴とする半導体装置。1. A bonding pad formed on a semiconductor substrate, a passivation film surrounding the bonding pad, a wire connected to the bonding pad, and the bonding pad including at least a connecting portion of the wire. A semiconductor device comprising a resin film formed thereon.
コン樹脂膜である請求項１記載の半導体装置。2. The semiconductor device according to claim 1, wherein the resin film is a polyimide resin film or a silicone resin film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2189191A JPH04260327A (en) | 1991-02-15 | 1991-02-15 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2189191A JPH04260327A (en) | 1991-02-15 | 1991-02-15 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04260327A true JPH04260327A (en) | 1992-09-16 |
Family
ID=12067733
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2189191A Pending JPH04260327A (en) | 1991-02-15 | 1991-02-15 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04260327A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108649018A (en) * | 2018-05-14 | 2018-10-12 | 深圳市欧科力科技有限公司 | A kind of power device and its packaging method |
-
1991
- 1991-02-15 JP JP2189191A patent/JPH04260327A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108649018A (en) * | 2018-05-14 | 2018-10-12 | 深圳市欧科力科技有限公司 | A kind of power device and its packaging method |
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