JPH0425709B2 - - Google Patents
Info
- Publication number
- JPH0425709B2 JPH0425709B2 JP57139931A JP13993182A JPH0425709B2 JP H0425709 B2 JPH0425709 B2 JP H0425709B2 JP 57139931 A JP57139931 A JP 57139931A JP 13993182 A JP13993182 A JP 13993182A JP H0425709 B2 JPH0425709 B2 JP H0425709B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- type
- injector
- emitter
- logic elements
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 17
- 238000002347 injection Methods 0.000 claims description 14
- 239000007924 injection Substances 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 11
- 238000000926 separation method Methods 0.000 claims description 5
- 239000012212 insulator Substances 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 42
- 238000010586 diagram Methods 0.000 description 15
- 230000000694 effects Effects 0.000 description 14
- 239000012535 impurity Substances 0.000 description 10
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 8
- 229910052698 phosphorus Inorganic materials 0.000 description 8
- 239000011574 phosphorus Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 101000995832 Homo sapiens Nephronectin Proteins 0.000 description 1
- 102100034595 Nephronectin Human genes 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57139931A JPS5931054A (ja) | 1982-08-13 | 1982-08-13 | 半導体集積回路装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57139931A JPS5931054A (ja) | 1982-08-13 | 1982-08-13 | 半導体集積回路装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5931054A JPS5931054A (ja) | 1984-02-18 |
| JPH0425709B2 true JPH0425709B2 (ko) | 1992-05-01 |
Family
ID=15256996
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57139931A Granted JPS5931054A (ja) | 1982-08-13 | 1982-08-13 | 半導体集積回路装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5931054A (ko) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4957705A (en) * | 1986-11-10 | 1990-09-18 | Japan Electronic Control Systems Co., Ltd. | Oxygen gas concentration-detecting apparatus |
| JP4815754B2 (ja) * | 2004-04-27 | 2011-11-16 | 株式会社デンソー | 半導体装置 |
-
1982
- 1982-08-13 JP JP57139931A patent/JPS5931054A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5931054A (ja) | 1984-02-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4862240A (en) | Complementary semiconductor device | |
| US4826780A (en) | Method of making bipolar transistors | |
| US4669177A (en) | Process for making a lateral bipolar transistor in a standard CSAG process | |
| US3430110A (en) | Monolithic integrated circuits with a plurality of isolation zones | |
| US6365447B1 (en) | High-voltage complementary bipolar and BiCMOS technology using double expitaxial growth | |
| US4536784A (en) | Semiconductor device having a junction capacitance, an integrated injection logic circuit and a transistor in a semiconductor body | |
| JPH06151859A (ja) | 半導体装置 | |
| US3460006A (en) | Semiconductor integrated circuits with improved isolation | |
| US5089429A (en) | Self-aligned emitter bicmos process | |
| US4404738A (en) | Method of fabricating an I2 L element and a linear transistor on one chip | |
| US4975764A (en) | High density BiCMOS circuits and methods of making same | |
| USRE34158E (en) | Complementary semiconductor device | |
| EP0413256B1 (en) | Method of producing a semiconductor structure for high power integrated circuits | |
| US4160989A (en) | Integrated circuit having complementary bipolar transistors | |
| US3707656A (en) | Transistor comprising layers of silicon dioxide and silicon nitride | |
| JPH0425709B2 (ko) | ||
| US6664574B2 (en) | Heterojunction semiconductor device and method of manufacturing | |
| US3617826A (en) | An integrated transistor with a polycrystalline contact to a buried collector region | |
| US4692784A (en) | Dielectric insulation type semiconductor integrated circuit having low withstand voltage devices and high withstand voltage devices | |
| US3885994A (en) | Bipolar transistor construction method | |
| US5481130A (en) | Semiconductor IIL device with dielectric and diffusion isolation | |
| JPS6133261B2 (ko) | ||
| JPH07130898A (ja) | 半導体装置およびその製造方法 | |
| JPH0250475A (ja) | 絶縁垂直スーパー・ベータ・バイポーラ・トランジスタの製造工程 | |
| JPS61280650A (ja) | 入力回路 |