JPH0425704B2 - - Google Patents
Info
- Publication number
- JPH0425704B2 JPH0425704B2 JP57093345A JP9334582A JPH0425704B2 JP H0425704 B2 JPH0425704 B2 JP H0425704B2 JP 57093345 A JP57093345 A JP 57093345A JP 9334582 A JP9334582 A JP 9334582A JP H0425704 B2 JPH0425704 B2 JP H0425704B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- type
- island
- conductivity type
- island region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS
- H10D84/854—Complementary IGFETs, e.g. CMOS comprising arrangements for preventing bipolar actions between the different IGFET regions, e.g. arrangements for latchup prevention
Landscapes
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57093345A JPS58210658A (ja) | 1982-05-31 | 1982-05-31 | 半導体集積回路 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57093345A JPS58210658A (ja) | 1982-05-31 | 1982-05-31 | 半導体集積回路 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58210658A JPS58210658A (ja) | 1983-12-07 |
| JPH0425704B2 true JPH0425704B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1992-05-01 |
Family
ID=14079674
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57093345A Granted JPS58210658A (ja) | 1982-05-31 | 1982-05-31 | 半導体集積回路 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58210658A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5399783A (en) * | 1977-02-10 | 1978-08-31 | Hewlett Packard Yokogawa | Ic with schottky barrier diode |
| JPS5433681A (en) * | 1977-08-22 | 1979-03-12 | Hitachi Ltd | Semiconductor integrated circuit device |
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1982
- 1982-05-31 JP JP57093345A patent/JPS58210658A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58210658A (ja) | 1983-12-07 |