JPH04243117A - X-ray exposure mask manufacturing apparatus - Google Patents

Abstract

PURPOSE:To suppress the distribution of an etching speed in a substrate surface and avoid the breakdown of an X-ray transmitting film by a method wherein a nozzle to jet etchant against the rear surface of a rotating substrate and the rear surface of the substrate are relatively moved constantly along a plain perpendicular to a nozzle axis. CONSTITUTION:An etching nozzle 5 having a plurality of etchant jet outlets 4 is provided at the bottom of an etching chamber 1 and, further, a recovery tube 2 of jetted etchant 3 is provided. The etching nozzle 5 jets the etchant 3 against the whole rotation/revolution plane of a mask in a direction perpendicular to a plane parallel with the rotation/revolution plane of the mask. In other works, etchant 3 is jetted out while all the points of the rear of a substrate 51 are relatively moved constantly against the etching nozzle 5 in a direction perpendicular to a nozzle axis to etch the rear plane of the substrate 51. With this constitution, the distribution of an etching speed in the substrate 51 surface can be suppressed and the breakdown of an X-ray transmitting film 52 can be avoided without reducing an etching speed.

Description

[Detailed description of the invention]

0001

[Industrial Application Field] The present invention relates to an X-ray exposure mask manufacturing apparatus, and more specifically, to selectively selectively expose areas of a substrate on which an X-ray transparent film is laminated, leaving the X-ray transparent film. The present invention relates to an X-ray exposure mask manufacturing apparatus used for etching removal.

[0002] X-ray exposure technology is attracting attention as a means of transferring and forming fine circuit patterns in the VLSI manufacturing process, but the X-ray exposure mask used in this technology is different from conventional light exposure masks. The shape is complex. Therefore, in order to improve the quality and manufacturing yield, it is necessary to devise a manufacturing apparatus that is compatible with the structure of the X-ray exposure mask.

0003

2. Description of the Related Art FIGS. 5(a) to 5(c) are cross-sectional views of a method for manufacturing an X-ray exposure mask. Typically, an X-ray exposure mask has a thickness of 500 mm, as shown in Figure 5(a).
After forming an X-ray transparent film 52 made of silicon carbide (SiC) with a thickness of about 2 to 3 μm by epitaxial growth on a silicon (Si) substrate 51 with a thickness of about 600 μm, sputtering is performed on this X-ray transparent film 52. Made of tantalum (Ta) or gold (Au), etc., with a thickness of 5000 to 6
After depositing an X-ray absorber film 53 with a thickness of about 0.000 Å, and then dividing this Si substrate 51 into predetermined sizes and shapes, the Si substrate 51 is made of SiC as shown in FIG. 5(b).
It is adhesively fixed onto a support frame 54 made of ceramic or the like and having a thickness of about 5 mm.

Then, using the support frame 54 as a mask, the exposed Si substrate 51 is selectively etched away from the back side using an etching solution jetted from below, as shown in FIG.
c) As shown in FIG.
is formed into a structure that is mechanically protected from deformation and destruction.

In the manufacturing process of such an X-ray exposure mask, when selectively etching away the Si substrate 51 defined by the support frame 54 and exposed on the lower surface of the mask as described above, conventional methods are used. 6, an etching container 1 having an etching liquid recovery pipe 2, an etching nozzle 5 fixed at the center of the bottom of the etching container 1 and having a plurality of chemical liquid ejection holes 4 for ejecting etching liquid 3 upward. ,
A liquid temperature adjusting tank 6 having a function of storing the etching liquid 3 and adjusting its temperature, a liquid feeding means 7 for pressure-feeding the etching liquid 3 from the liquid temperature adjusting tank 6 into the etching nozzle 5, and An X-ray exposure mask 8 to which an X-ray transparent film 52 having an X-ray absorber film 53 on the upper surface is fixed via a Si substrate 51 is tightened at a support frame 54 via an O-ring 9. a substrate holder 11 fixedly placed on the etching container 1 so as to be rotatable about the central axis of the etching nozzle 5 via a sliding surface 10;
A rotation mechanism 12 for rotating the substrate holder 11 is provided, and while the X-ray exposure mask 8 is rotated by the substrate holder 11, the etching solution 3 is supplied from the chemical jet hole 4 of the etching nozzle 5 to the X-ray exposure mask 8. It had a structure that emitted radiation almost perpendicularly toward the back surface.

[0006]

[Problems to be Solved by the Invention] In the conventional X-ray exposure mask manufacturing apparatus described above, each point on the back surface of the Si substrate 51 to be selectively etched is perpendicular to the direction in which the etching solution 3 is spouted as the substrate 51 rotates. In the conventional structure in which the substrate 51 rotates around its center as described above, the momentum at the center of rotation of the substrate 51 is 0, and as it moves away from the rotation axis, , the momentum increases in proportion to its radius. The etching rate of the substrate 51 depends on the above-mentioned momentum, and as shown in FIG. 7, the etching rate distribution within the substrate plane is as shown in FIG. The etching rate increases as the distance increases, that is, as the distance approaches the outer periphery of the substrate. Therefore, due to this etching rate distribution, the substrate 51
Even though the etching has been completed on the outer periphery, the substrate 51 still remains in the center, and the X-ray transparent film 52 remains due to the Si substrate 51 remaining in this part.
A problem has arisen in that excessive local stress is generated in the X-ray transmitting film 52 and the X-ray transmitting film 52 is destroyed.

Therefore, the present invention reduces the etching rate distribution within the substrate surface without reducing the etching rate of the substrate, thereby preventing destruction of the X-ray transmitting film and improving the manufacturing yield of X-ray exposure masks. The purpose is to

[0008]

[Means for Solving the Problems] The above problem is to solve the above problem by rotating a substrate having etching selectivity with respect to the X-ray transparent film, the surface of which is coated with the X-ray transparent film. An X-ray exposure mask manufacturing apparatus that selectively etches and removes the back side of the substrate with a chemical liquid ejected from a nozzle arranged perpendicular to the substrate, wherein all points on the back side of the substrate are etched away. This problem is solved by the X-ray exposure mask manufacturing apparatus according to the present invention, which has means for etching the back surface of the substrate by ejecting a chemical solution while constantly moving relative to the nozzle in a direction perpendicular to the axis of the nozzle.

[0009]

[Operation] That is, in the X-ray exposure mask manufacturing apparatus of the present invention, a nozzle that injects an etching solution onto a rotating substrate from below toward the back surface of the substrate and the back surface of the substrate are constantly connected along a plane perpendicular to the nozzle axis. By making the relative movement, the total relative momentum between the back surface of the substrate and the nozzle during the pre-etching time is averaged, thereby reducing the etching rate distribution within the substrate surface and reducing the local etching delay of the substrate. This is intended to prevent the destruction of the X-ray transparent film caused by this and improve the manufacturing yield of X-ray exposure masks.

0010

[Example] FIG. 1 is a schematic sectional view of a first embodiment of the X-ray exposure mask manufacturing apparatus according to the present invention, FIG. 2 is a distribution diagram of etching rate within the substrate plane showing the effects of the present invention, and FIG. and Figure 4
FIG. 2 is a schematic perspective view of a means for relative movement between a nozzle and a substrate in second and third embodiments of the present invention. Identical objects are indicated by the same reference numerals throughout the figures.

The present invention will be explained in detail below with reference to illustrated embodiments. The X-ray exposure mask manufacturing apparatus according to the present invention includes:
As shown in FIG. 1, a mask revolution shaft 1 consisting of a shaft of a drive motor 13 fixed to a support arm 12, for example.
4, a mask rotation shaft 16 rotatably attached to an eccentric position of a rotating disk 15 fixed to this mask rotation shaft 14, and a substrate holder 11 fixed to the tip of this mask rotation shaft 16. , a transmission gear 17A provided on each shaft to engage the mask revolution shaft 14 and the mask rotation shaft 16.
, 17B, which causes the X-ray exposure mask 8 that rotates around the mask rotation shaft 16 to revolve around the mask revolution shaft 14, and a An etching nozzle 5 having a plurality of chemical liquid ejection ports 4 for ejecting etching liquid 3 in a direction perpendicular to the entire surface of the rotational revolution plane of the mask is disposed at the bottom;
In addition, an etching container 1 having a recovery pipe 2 for the spouted etching liquid, a liquid temperature adjustment tank 6 to which the etching liquid recovery pipe 2 is connected, and a liquid for pumping the etching liquid 3 from the liquid temperature adjustment tank 6 to the etching nozzle 5. and a feeding means 7. Further, the substrate holder 11 used in this embodiment is
The X-ray transparent film 52 having the X-ray absorber film 53 on the top is made of Si.
The X-ray exposure mask 8 fixed on the support frame 54 via the substrate 51 is held between the O-rings 9 and the mask rotation shaft 14 with the Si substrate 51 side of the mask 8 facing the etching nozzle 5 side. It has a hanging structure. In the figure, 18 indicates a bearing, and 19 indicates a collar.

Then, the X-ray exposure mask 8 is rotated around the mask rotation shaft 16 and revolved around the mask revolution shaft 14, so that the X-ray exposure mask 8 is rotated in a direction perpendicular to the Si substrate 51 surface exposed on the back surface of the mask. Then, the etching liquid 3 is sprayed from the etching nozzle 5 to etch the Si substrate 51 until the entire surface defined by the support frame 54 on the back surface of the upper X-ray transparent film 52 is exposed. At this time, the etching solution used is, for example, a mixed solution of 1 volume of hydrofluoric acid (HF) and 3 volumes of nitric acid (HNO3).

In the above apparatus, as a result of performing etching while varying the ratio of the number of rotations and the number of revolutions of the mask, the total relative momentum of each part of the Si substrate 51 surface to the etching nozzle until the etching is completed is averaged. As shown in the etching rate distribution diagram in the substrate plane in Figure 2, the etching rate is not different from the etching rate at the outer periphery of the conventional mask (Si substrate), and is almost constant up to the center of the mask (Si substrate). This makes it possible to perform etching at a high etching rate, and eliminates the possibility of locally thick Si substrate 51 remaining during the etching process.
There was almost no damage to the radiation transmitting film 52.

Note that the same effect as in the above embodiment can be obtained by rotating the X-ray exposure mask 8 fixed to a substrate holder (not shown) around the center, as in the second embodiment shown in FIG.
and a rotation axis S5 eccentric from the rotation axis S4 of the mask 8.
This can also be achieved by rotating (revolving) the etching nozzle 5 around the .

Furthermore, as in the third embodiment shown in FIG.
Alternatively, the X-ray exposure mask 8 may be rotated eccentrically around one eccentric axis S6, and the etching nozzle 5 may be further rotated (revolving) around an axis S7 that is offset from the eccentric axis S6. achieved.

Furthermore, although not shown, while rotating the X-ray exposure mask, the Si substrate surface exposed on the back side of the X-ray exposure mask is sequentially scanned with an etching solution using an etching nozzle that can be moved back and forth and left and right. It can also be achieved by

[0017]

Effects of the Invention As explained above, according to the X-ray exposure mask manufacturing apparatus according to the present invention,
The etching rate of the entire surface of the laminated substrate (Si substrate) of the X-ray transparent film is averaged, so that there is no local residual of the laminated substrate (Si substrate) of the X-ray transparent film during the etching process, and the resulting local stress is reduced. The resulting damage to the X-ray transmitting film is almost completely eliminated, and the manufacturing yield of X-ray exposure masks is improved.

[Brief explanation of the drawing]

FIG. 1 A schematic cross-sectional view of a first embodiment of an X-ray exposure mask manufacturing apparatus according to the present invention.

[Figure 2] Distribution diagram of etching rate within the substrate plane showing the effects of the present invention

FIG. 3 is a schematic perspective view of a means for relative movement between a nozzle and a substrate in a second embodiment of the present invention.

[Figure 4]
FIG. 4 is a schematic perspective view of a means for relative movement between a nozzle and a substrate in a third embodiment of the present invention.

[Figure 5] Cross-sectional diagram of the process for manufacturing an X-ray exposure mask

[Figure 6] Conventional X
Schematic cross-sectional view of line exposure mask manufacturing equipment

[Figure 7] Distribution diagram of etching rate within the substrate plane using conventional equipment

[Explanation of symbols]

1 Etching container 2 Etching liquid recovery pipe 3 Etching solution 4 Chemical liquid jet hole 5 Etching nozzle 6 Liquid temperature adjustment tank 7 Liquid feeding means 8. X-ray exposure mask 9 O-ring 10 Sliding surface 11　Substrate holder 12 Support arm 13 Drive motor 14 Mask revolution shaft 15 Rotating disk 16 Mask rotation shaft 17A, 17B Transmission gear 18 Bearing 19 Color 51 Si substrate 52 X-ray transparent membrane 53 X-ray absorber membrane 54 Support frame

Claims (2)

[Claims] Claim 1: In a rotated state, a substrate having etching selectivity with respect to the X-ray transparent film, the surface of which is coated with the X-ray transparent film, is placed below the substrate in a direction perpendicular to the substrate. An X-ray exposure mask manufacturing device that selectively etches and removes the back side of the substrate with a chemical jetted from arranged nozzles, the device etching away all points on the back side of the substrate with respect to the nozzle axis. An X-ray exposure mask manufacturing apparatus characterized by having means for etching the back surface of the substrate by ejecting a chemical solution while constantly making a relative movement in a perpendicular direction. 2. The means for constantly moving the back surface of the substrate relative to the nozzle is configured to rotate and revolve the substrate in opposite rotational directions along a plane perpendicular to the nozzle. 2. The X-ray exposure mask manufacturing apparatus according to claim 1.