JPH04242981A - Embedding type compound semiconductor light emitting device and manufacture thereof - Google Patents

Abstract

PURPOSE:To obtain higher light-emission efficiency by a method wherein a fourth semiconductor layer formed with atom-layer epitaxial growth method is inserted between a first semiconductor lamination body and a semi--insulation semiconductor layer. CONSTITUTION:Between a semiconductor lamination body 2 and a semi- insulation semiconductor layer 11, a semiconductor layer 10 is inserted being formed with the atom-layer epitaxial growth method where impurities that provides a conduction type consisting of InP is not introduced intentionally or, even if introduced, impurities that provides p-type is introduced only with low density. Even if an electrode layer 13 passes over the semiconductor layer 10 to extend to the surface of the semi-insulation semiconductor layer 11, it is possible to narrowly feed current to the mesa section 3 of the semiconductor lamination body 2 so that the light-emission within the mesa 3 can be effectively obtained.

Description

[Detailed description of the invention]

0001

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a buried compound semiconductor light emitting device having a double heterojunction or a pn junction and a method for manufacturing the same.

0002

2. Description of the Related Art Hitherto, a buried compound semiconductor light emitting device has been proposed which will be described below with reference to FIG. That is,
A semiconductor stack 2 having a mesa portion 3 is formed on a semiconductor substrate 1 made of, for example, InP and having, for example, n-type.

In this case, the semiconductor laminate 2 includes: (1) a semiconductor layer 4 formed on the semiconductor substrate 1, which is made of, for example, InP and serves as a cladding layer having an n-type, and an impurity that imparts a conductivity type is intentionally introduced into the semiconductor layer 4; For example, In
A semiconductor layer 5 as an active layer made of GaAsP, another semiconductor layer 6 as another cladding layer made of, for example, InP and having p-type, and an electrode attachment layer made of, for example, InGaAsP and having p-type. From a semiconductor stacked body (not shown) having a structure in which other semiconductor layers 7 and other semiconductor layers 7 are stacked in that order, It is formed by etching.

Further, a semi-insulating semiconductor layer 11 made of InP and exhibiting semi-insulating properties due to the introduction of Fe is provided on the semiconductor stack 2 having the mesa portion 3 described above, which embeds the mesa portion 3 and The upper surface is formed so as to substantially coincide with the top surface of the mesa portion 3.

Furthermore, a semiconductor laminate 2 is provided on the semiconductor substrate 1.
An electrode layer 12 is formed on the opposite side.

Further, on the top surface of the mesa portion 3 of the semiconductor stack 2, that is, on the top surface of the semiconductor layer 7 and the top surface of the semi-insulating semiconductor layer 11, an electrode layer common to them extends continuously between them. 13 are formed.

The above is the structure of the conventionally proposed buried compound semiconductor light emitting device.

[0008] Conventionally, a method for manufacturing an embedded compound semiconductor light emitting device has been proposed as described below with reference to FIGS. 9 and 10.

In FIGS. 9 and 10, parts corresponding to those in FIG. 8 are designated by the same reference numerals, and detailed description thereof will be omitted.

The method for manufacturing the conventional buried compound semiconductor light emitting device shown in FIGS. 9 and 10 involves the following sequential steps to manufacture the conventional buried compound semiconductor light emitting device shown in FIG. .

That is, a semiconductor substrate 1 is prepared (FIG. 9).
A).

[0012] Then, a semiconductor laminate 2 having a structure in which semiconductor layers 4, 5, 6, and 7 are laminated in that order on the semiconductor substrate 1 will become a semiconductor laminate 2 having a mesa portion 3. ' is formed by vapor phase epitaxial growth (FIG. 9B).

Next, by etching the semiconductor stack 2' from the side opposite to the semiconductor substrate 1 to a depth that reaches the inside of the semiconductor layer 4, the semiconductor stack 2' is etched to a depth that reaches the inside of the semiconductor layer 4. 2 (Figure 9C).

Next, as described above in the semiconductor stack 2, a semi-insulating semiconductor layer 11 is formed by vapor phase epitaxial growth to fill the mesa portion 3 of the semiconductor stack 2 and whose upper surface substantially coincides with the top surface of the mesa portion 3. (Fig. 10D).

Next, a semiconductor stack 2 is placed on the semiconductor substrate 1.
On the opposite side, an electrode layer 12 is formed, and the top surface of the mesa portion 3 of the semiconductor stack 2 and the semi-insulating semiconductor layer 1 are formed.
1, with a common electrode layer 13 extending continuously between them (FIG. 10E), thus
The conventional embedded compound semiconductor light emitting device described above with reference to FIG. 8 is obtained.

The above is a conventionally proposed method for manufacturing a buried compound semiconductor light emitting device.

According to the conventional embedded compound semiconductor light emitting device having the configuration described above with reference to FIG. , the current flows through the mesa portion 3 of the semiconductor stack 2.
The light flows to the semiconductor layer 5 as an active layer, and based on this, light emission is obtained in the semiconductor layer 5 as an active layer, and the light is transmitted to the semiconductor layer 5 as an active layer.
A function as a light emitting device is obtained in which the light propagates while being confined by the semiconductor layers 4 and 6 as cladding layers.

The semi-insulating semiconductor layer 11 formed on the semiconductor stack 2 so as to fill the mesa portion 3 is
However, if the semiconductor layer 5 as an active layer is made of InGaAs as in the above example, the semi-insulating semiconductor layer 1
1 functions as a cladding layer. Therefore, the light generated in the semiconductor layer 5 as an active layer is propagated within the semiconductor layer 5 while being confined by the semi-insulating semiconductor layer 11. This results in less loss than when the semiconductor layer 11 does not function as a cladding layer.

Furthermore, a semi-insulating semiconductor layer 1 made of InP
1 exhibits semi-insulating properties due to the introduction of Fe, even if the electrode layer 13 extends over the semi-insulating semiconductor layer 11, current will not flow into the mesa portion 3 of the semiconductor stack 2. The flow is constricted, and therefore, in the semiconductor layer 5 as an active layer,
Since current can be injected at high current density,
Light emission from the semiconductor layer 5 as an active layer can be obtained with relatively high efficiency.

Furthermore, according to the method for manufacturing the conventional embedded compound semiconductor light emitting device described above with reference to FIGS. 9 and 10, the conventional embedded compound semiconductor light emitting device described above with reference to FIG. 8 can be easily manufactured. .

[0021]

However, in the case of the conventional buried compound semiconductor light emitting device shown in FIG. Therefore, it is undeniable that a leakage current that spreads toward the semi-insulating semiconductor layer 11 side occurs, and the region where the leakage current spreads is the mesa portion 3 of the semi-insulating semiconductor layer 11.
Therefore, Fe is present in that region. For this reason, Fe acts as a recombination center for carriers (electrons) that become leakage current and absorbs the leakage current, so that the leakage current is generated at a value that cannot be ignored.

From the above, it has been stated that in the case of the conventional embedded compound semiconductor light emitting device described above with reference to FIG. The drawback is that the efficiency is not sufficiently high.

In addition, in the case of the conventional method for manufacturing the buried compound semiconductor light emitting device described above with reference to FIGS. 9 and 10, the temperature of the semiconductor substrate 1 is kept at 450° C.
By raising the temperature to a relatively high temperature such as ℃ or higher, it can be formed with good crystallinity, but in this case, the thickness and composition of the semiconductor layer 5 as an active layer are changed from the original values. Therefore, it is difficult to manufacture an embedded compound semiconductor light emitting device with desired excellent characteristics.

[0024] Therefore, the present invention is free from the above-mentioned drawbacks.
This paper aims to propose a novel embedded compound semiconductor light emitting device and its manufacturing method.

[0025]

[Means for Solving the Problems] The embedded compound semiconductor light emitting device according to the present invention, as in the case of the conventional embedded compound semiconductor light emitting device described above with reference to FIG. On the semiconductor substrate having the first conductivity type, ■
A first semiconductor layer made of a compound semiconductor and having a first conductivity type formed on the semiconductor substrate; and a second semiconductor layer made of a compound semiconductor and having a second conductivity type opposite to the first conductivity type. The second semiconductor layer is made of a compound semiconductor and an impurity that imparts a conductivity type is not intentionally introduced, or even if it is introduced, it is introduced only at a low concentration, via a third semiconductor layer, From a first semiconductor laminate having a structure in which these layers are laminated in this order, (1) an etching process to a depth reaching into the first semiconductor layer from the side opposite to the semiconductor substrate side; ■ A second semiconductor stack having a mesa portion is formed, (ii
) on the second semiconductor laminate, made of InP and made of Fe.
A semi-insulating semiconductor layer exhibiting semi-insulating properties is formed so as to fill the mesa portion, and a semi-insulating semiconductor layer exhibiting semi-insulating properties is formed on the semiconductor substrate on the side opposite to the second semiconductor stack. an electrode layer is formed on the top surface of the mesa portion of the second semiconductor stack and the top surface of the semi-insulating semiconductor layer, and a common electrode layer is formed on the top surface of the mesa portion of the second semiconductor stack and the top surface of the semi-insulating semiconductor layer, and It has a structure in which two electrode layers are formed.

However, in the embedded compound semiconductor light emitting device according to the present invention having such a configuration, there is a gap between the second semiconductor stack and the semi-insulating semiconductor layer. , ■ It is made of InP, and impurities that give conductivity type are not intentionally introduced, or even if they are, impurities that give p-type conductivity are only introduced at a low concentration. ■ Formed by atomic layer epitaxial growth method. A fourth semiconductor layer is interposed.

Furthermore, the method for manufacturing the embedded compound semiconductor light emitting device according to the present invention is similar to the method for manufacturing the conventional embedded compound semiconductor light emitting device described above with reference to FIGS. 9 and 8. a first semiconductor layer made of a compound semiconductor and having the first conductivity type; a second semiconductor layer made of a compound semiconductor and having the opposite conductivity type; A third semiconductor layer in which the second semiconductor layer having a conductivity type is made of a compound semiconductor, and impurities that impart a conductivity type are not intentionally introduced, or if they are introduced, only at a low concentration. (ii) forming a first semiconductor laminate having a structure in which the first semiconductor laminate is stacked in this order through the first semiconductor laminate from the side opposite to the semiconductor substrate side with respect to the first semiconductor laminate; (iii) forming a second semiconductor stack having a mesa portion from the first semiconductor stack by etching deep enough to reach inside the semiconductor layer; and (iii) forming a second semiconductor stack on the second semiconductor stack. , forming a semi-insulating semiconductor layer made of InP and having semi-insulating properties by introducing Fe into the mesa portion of the second semiconductor stack by vapor phase epitaxial growth; (iv) forming a first electrode layer on the semiconductor substrate on a side opposite to the second semiconductor stack; and forming a first electrode layer on the top surface of the mesa portion of the second semiconductor layer and the semi-insulating semiconductor A second electrode layer common to the layers is formed on the top surface of the layers, extending continuously therebetween.

However, in the method for manufacturing an embedded compound semiconductor light emitting device according to the present invention, in the method for manufacturing such an embedded compound semiconductor light emitting device, (v) from the first semiconductor laminate to the second semiconductor laminate, After the step of forming the semiconductor layer and before the step of forming the semi-insulating semiconductor layer, (1) introducing or introducing an impurity that is InP and imparts a conductivity type onto the second semiconductor layered body; The fourth semiconductor layer, in which only a low concentration of impurities that give p-type conductivity is introduced, is grown by atomic layer epitaxial growth. and forming each part to have substantially uniform thickness.

[0029]

[Operations and Effects] The embedded compound semiconductor light emitting device according to the present invention is different from the conventional embedded compound semiconductor light emitting device described above with reference to FIG. ■It is made of InP and impurities that give conductivity type are not intentionally introduced, or even if they are, the impurities that give p-type conductivity are only introduced at a low concentration. ■It is formed by atomic layer epitaxial growth The structure is similar to that of the conventional buried compound semiconductor light emitting device described above with reference to FIG. 8, except that a fourth semiconductor layer is inserted, and the fourth semiconductor layer is Because it has a high resistivity, even if the second electrode layer extends across the fourth semiconductor layer and onto the semi-insulating semiconductor layer,
As in the case of the conventional embedded compound semiconductor light emitting device described above, the current can be passed through the mesa portion of the second semiconductor stack in a constricted manner.
As in the case of the conventional buried compound semiconductor light emitting device described above, light emission within the mesa portion can be obtained with relatively high efficiency.

However, in the case of the embedded compound semiconductor light emitting device according to the present invention, when current flows through the mesa portion of the second semiconductor stack, a portion of the current leaks to the semi-insulating semiconductor layer side. Even if a current is generated, the region where the leakage current spreads does not reach into the semi-insulating semiconductor layer.
can be terminated in the fourth semiconductor layer and in that region include Fe such as is present in the semi-insulating semiconductor layer.
does not have. For this reason, even if carriers that become a leakage current are accumulated in the fourth semiconductor layer, the leakage current is hardly absorbed. This is a much smaller and negligible value than in the case of the embedded compound semiconductor light emitting device.

From the above, according to the embedded compound semiconductor light emitting device according to the present invention, a significantly higher luminous efficiency can be obtained than in the case of the conventional embedded compound semiconductor light emitting device described above with reference to FIG. I can do it.

Furthermore, according to the method for manufacturing a buried compound semiconductor light emitting device according to the present invention, a buried compound semiconductor light emitting device that can obtain the above-mentioned excellent effects according to the present invention can be manufactured using a conventional buried compound semiconductor light emitting device. A step of forming a second semiconductor stack from the first semiconductor stack in the method for manufacturing the device;
By simply providing a step of forming the 64th semiconductor layer to prevent the occurrence of leakage current as described for the embedded compound semiconductor light emitting device according to the present invention between the step of forming the semi-insulating semiconductor layer, the process can be easily performed. can be manufactured.

Furthermore, since the embedded compound semiconductor light emitting device is formed with a fourth semiconductor layer that does not cause leakage current, it is not necessary to form a semi-insulating semiconductor layer by applying high temperatures to the semiconductor substrate. Therefore, the semi-insulating semiconductor layer may be formed with somewhat poor insulating properties, and since the fourth semiconductor layer is formed by atomic layer epitaxial growth, the fourth semiconductor layer may be formed on the semiconductor substrate. It can be easily formed to have a high specific resistance without applying high temperatures, and therefore a buried compound semiconductor light emitting device can be easily manufactured to have desired characteristics.

[0034]

[Embodiment 1] Next, a first embodiment of a buried compound semiconductor light emitting device according to the present invention will be described with reference to FIG.

In FIG. 1, parts corresponding to those in FIG. 8 are designated by the same reference numerals, and detailed description thereof will be omitted.

The embedded compound semiconductor light emitting device according to the present invention shown in FIG. 1 differs from the conventional embedded compound semiconductor light emitting device described above in FIG. A semiconductor formed by the atomic layer epitaxial growth method, which is made of InP and has not intentionally introduced an impurity that imparts a conductivity type, or has only a low concentration of an impurity that imparts a p-type conductivity. The structure is similar to that of the conventional embedded compound semiconductor light emitting device described above with reference to FIG. 8, except that the layer 10 is inserted.

The above is the structure of the first embodiment of the embedded compound semiconductor light emitting device according to the present invention.

The embedded compound semiconductor light emitting device according to the present invention having such a configuration has the same structure as the conventional embedded compound semiconductor light emitting device described above with reference to FIG. 8, except for the above-mentioned matters. has.

Therefore, although a detailed explanation is omitted, even if the electrode layer 13 extends across the semiconductor layer 10 and onto the semi-insulating semiconductor layer 11, the conventional buried type described above with reference to FIG. As in the case of a compound semiconductor light emitting device, the semiconductor stack 2
Since the current can be passed through the mesa part 3 in a constricted manner,
As in the case of the conventional buried compound semiconductor light emitting device described above with reference to FIG. 8, light emission within the mesa portion 3 can be obtained with relatively high efficiency.

However, in the case of the embedded compound semiconductor light emitting device according to the present invention shown in FIG. Even if a leakage current that spreads to the side occurs, the region where the leakage current spreads can be terminated within the semiconductor layer 10 that does not reach the semi-insulating semiconductor layer 11. It does not contain Fe, which is present in the semiconductor layer 11. For this reason, even if carriers that become a leakage current are accumulated in the semiconductor layer 10, the leakage current is hardly absorbed. Compared to the case of embedded compound semiconductor light-emitting devices, this phenomenon occurs only at a much smaller and negligible value.

From the above, the buried compound semiconductor light emitting device according to the present invention shown in FIG. You can gain efficiency.

[0042]

[Embodiment 2] Next, a second embodiment of the buried compound semiconductor light emitting device according to the present invention will be described with reference to FIG.

In FIG. 2, parts corresponding to those in FIG. 1 are designated by the same reference numerals, and detailed description thereof will be omitted.

The buried compound semiconductor light emitting device according to the present invention shown in FIG. 2 is the same as the buried compound semiconductor light emitting device according to the present invention described above in FIG. In the case of the buried compound semiconductor light emitting device according to the present invention as described above in FIG. It has a similar configuration.

The above is the structure of the second embodiment of the embedded compound semiconductor light emitting device according to the present invention.

The embedded compound semiconductor light emitting device according to the present invention having such a configuration has the same features as the embedded compound semiconductor light emitting device according to the present invention described above with reference to FIG. 1, except for the above-mentioned matters. and an electrode layer 12
By connecting a required power source between the semiconductor layers 4 and 13 and injecting a current into the mesa portion 3 of the semiconductor stack 2, light is emitted at the pn junction between the semiconductor layers 4 and 6, and the light is transmitted to the semiconductor layers 6 and 13. 7 and the electrode layer 13, so further detailed explanation will be omitted, but as in the case of the embedded compound semiconductor light emitting device according to the present invention described above with reference to FIG. It is clear that the function as a device can be obtained.

Furthermore, in the case of the buried compound semiconductor light emitting device according to the present invention shown in FIG. 2, as in the case of the buried compound semiconductor light emitting device according to the present invention described above with reference to FIG. Since the semiconductor layer 10 is provided between the insulating semiconductor layers 11, almost no leakage current from the mesa portion 3 to the semi-insulating semiconductor layer 11 occurs. The same excellent effects as in the case of a type compound semiconductor light emitting device can be obtained.

[0048]

[Embodiment 3] Next, a first embodiment of a method for manufacturing a buried compound semiconductor light emitting device according to the present invention will be described with reference to FIGS. 3 and 4.

In FIGS. 3 and 4, parts corresponding to those in FIGS. 1, 9, and 10 are designated by the same reference numerals, and detailed description thereof will be omitted.

The method for manufacturing the buried compound semiconductor light emitting device according to the present invention shown in FIGS. 3 and 4 includes the following sequential steps to manufacture the buried compound semiconductor light emitting device according to the present invention shown in FIG. Manufacture.

A semiconductor substrate 1 is prepared in the same manner as in the manufacturing method of the conventional buried compound semiconductor light emitting device described above with reference to FIGS. 9 and 10 (FIG. 3A).

Next, a semiconductor stack of semiconductor layers 4, 5, 6 and 7 is formed on the semiconductor substrate 1 in the same way as in the manufacturing method of the conventional embedded compound semiconductor light emitting device described above with reference to FIGS. 9 and 10. body 2' is formed (Fig. 3B).

Next, in the same manner as in the manufacturing method of the conventional buried compound semiconductor light emitting device described above with reference to FIGS. 9 and 10, a semiconductor laminate 2 having a mesa portion 3 is formed from the semiconductor laminate 2'. (Figure 3C).

Next, whether an impurity made of InP and giving a conductivity type is not intentionally introduced onto the semiconductor stack 2, or even if it is, the impurity giving a p-type is only introduced at a low concentration. A semiconductor layer 10 is formed by atomic layer epitaxial growth so as to extend on the side surfaces of the mesa portion 3 but not on the top surface thereof and to have a substantially uniform thickness (FIG. 4D).

In this case, the semiconductor layer 10 is formed on the semiconductor substrate 1
For example, if the temperature is as low as 350°C and the crystallinity is good and the resistivity is high,
It can be easily formed to a thickness of A. An example of the atomic layer epitaxial growth method in this case uses InCl as the In source gas and PH3 as the P source gas.
The semiconductor layer 10 made of InP is formed by repeatedly forming a monoatomic layer of In and a monoatomic layer of P in a large number of alternating sequences.

Next, the semi-insulating semiconductor layer 11 and the mesa portion 3 are formed on the semiconductor stack 2 according to the method for manufacturing the conventional buried compound semiconductor light emitting device described above with reference to FIGS. 9 and 10. Formed so as to be buried through the semiconductor layer 10 (FIG. 4E)
.

In this case, the semi-insulating semiconductor layer 11 can be formed by heating the semiconductor substrate 1 to a low temperature of 450° C. or lower.

Next, as in the case of the manufacturing method of the conventional embedded compound semiconductor light emitting device described above with reference to FIGS. 9 and 10, an electrode is formed on the surface of the semiconductor substrate 1 opposite to the semiconductor stack 2 A layer 12 is formed, and a semiconductor layer 10 is formed on the top surface of the mesa portion 3 of the semiconductor stack 2 and the top surface of the semi-insulating semiconductor layer 11.
An electrode layer 13 is formed that extends continuously across the upper surface of the substrate (FIG. 4F), thus producing the buried compound semiconductor light emitting device according to the invention as described above in FIG.

The above is the first embodiment of the method for manufacturing a buried compound semiconductor light emitting device according to the present invention.

According to the manufacturing method of the embedded compound semiconductor light emitting device according to the present invention, although detailed explanation is omitted,
The embedded compound semiconductor light emitting device according to the present invention shown in FIG. Between the step of forming the semiconductor stack 2 and the step of forming the semi-insulating semiconductor layer 11,
It can be easily manufactured by simply providing a step of forming the semiconductor layer 10.

Furthermore, since the embedded compound semiconductor light emitting device is formed as having the semiconductor layer 10, it is not necessary to form the semi-insulating semiconductor layer 11 while the semiconductor substrate 1 is at a high temperature. Since layer 10 can also be formed at low temperatures, the semiconductor layer can be easily manufactured with desired properties. This is clear from the results shown in FIG. 7 obtained when measuring the relationship between the diffusion distance of impurities in the semiconductor layer 4 or 6 formed on the semiconductor substrate with respect to the temperature of the semiconductor substrate 1. Will.

[0062]

Embodiment 4 Next, a second embodiment of the method for manufacturing a buried compound semiconductor light emitting device according to the present invention will be described with reference to FIGS. 5 and 6.

In FIGS. 5 and 6, parts corresponding to those in FIGS. 2, 3, and 4 are designated by the same reference numerals, and detailed description thereof will be omitted.

The method for manufacturing the embedded compound semiconductor light emitting device according to the present invention shown in FIGS. 5 and 6 will not be described in detail, but
3 and 4, the present invention described above with reference to FIGS. 3 and 4 except that the semiconductor stack 2' to the semiconductor stack 2 are formed without the semiconductor layer 5 as an active layer. A buried compound semiconductor light emitting device which can obtain the excellent functions and effects of the present invention as described above with reference to FIG. 2 is manufactured using the same sequential steps as the buried compound semiconductor light emitting device according to the present invention.

The above is the second embodiment of the method for manufacturing a buried compound semiconductor light emitting device according to the present invention.

Although a detailed explanation will be omitted, the method for manufacturing the embedded compound semiconductor light emitting device according to the present invention also has the following advantages:
It is clear that the same excellent effects as in the method for manufacturing the embedded compound semiconductor light emitting device according to the present invention described above with reference to FIGS. 3 and 4 can be obtained.

Note that the above description merely shows a few embodiments of the present invention, and the semiconductor layer 5 as an active layer may have a multiple quantum well structure, and other methods may depart from the spirit of the present invention. Various modifications and changes may be made without the above.

[Brief explanation of the drawing]

FIG. 1 is a schematic cross-sectional view showing a first embodiment of an embedded compound semiconductor light emitting device according to the present invention.

FIG. 2 is a schematic cross-sectional view showing a second embodiment of the embedded compound semiconductor light emitting device according to the present invention.

FIG. 3 is a schematic cross-sectional view showing sequential steps of a first embodiment of the method for manufacturing an embedded compound semiconductor light emitting device according to the present invention.

FIG. 4 is a schematic cross-sectional view showing sequential steps of a first embodiment of a method for manufacturing an embedded compound semiconductor light-emitting device according to the present invention.

FIG. 5 is a schematic cross-sectional view showing sequential steps of a second embodiment of the method for manufacturing an embedded compound semiconductor light emitting device according to the present invention.

FIG. 6 is a schematic cross-sectional view showing sequential steps of a second embodiment of the method for manufacturing an embedded compound semiconductor light-emitting device according to the present invention.

FIG. 7 is a diagram showing the temperature dependence of the diffusion distance of impurities in a semiconductor layer, which is used to explain the manufacturing method of a buried compound semiconductor light emitting device according to the present invention.

FIG. 8 is a schematic cross-sectional view showing a conventional embedded compound semiconductor light emitting device.

FIGS. 9A and 9B are schematic cross-sectional views showing sequential steps in a conventional method for manufacturing an embedded compound semiconductor light-emitting device.

FIGS. 10A and 10B are schematic cross-sectional views showing sequential steps in a conventional method for manufacturing a buried compound semiconductor light-emitting device. 1 Semiconductor substrate 2, 2'
Semiconductor laminate 3
Mesa portions 4, 5, 6, 7 Semiconductor layer 10 Semiconductor layer 11
Semi-insulating semiconductor layers 12, 13
electrode layer

Claims (2)

[Claims] Claim 1: (1) on a semiconductor substrate made of a compound semiconductor and having a first conductivity type; (2) a first semiconductor layer made of a compound semiconductor and having a first conductivity type formed on the semiconductor substrate; and a second semiconductor layer made of a compound semiconductor and having a second conductivity type opposite to the first conductivity type,
They are laminated in that order via a third semiconductor layer which is made of a compound semiconductor and in which impurities that impart conductivity type are not intentionally introduced, or if they are introduced, they are introduced only at a low concentration. 2. A second semiconductor layer having a mesa portion formed by etching the first semiconductor layer from the side opposite to the semiconductor substrate to a depth reaching into the first semiconductor layer. A semiconductor stack is formed, and on the second semiconductor stack,
A semi-insulating semiconductor layer made of InP and exhibiting semi-insulating properties due to the introduction of Fe is formed so as to fill the mesa portion, and is formed on the semiconductor substrate, opposite to the side of the second semiconductor stack. A first electrode layer is formed on the top surface of the mesa portion of the second semiconductor stack and the top surface of the semi-insulating semiconductor layer, and a first electrode layer is formed on the top surface of the mesa portion of the second semiconductor stack and a top surface of the semi-insulating semiconductor layer. In the buried compound semiconductor light emitting device in which a second electrode layer is formed, ■In is formed between the second semiconductor laminate and the semi-insulating semiconductor layer.
The impurity that is P and gives conductivity type is not intentionally introduced, or even if it is, the impurity that gives p-type conductivity is only introduced at a low concentration. 1. An embedded compound semiconductor light emitting device, characterized in that a semiconductor layer is inserted therein. 2. On a semiconductor substrate made of a compound semiconductor and having a first conductivity type, a semiconductor substrate made of a compound semiconductor and having a first conductivity type is provided.
a first semiconductor layer having a conductivity type, and a second semiconductor layer made of a compound semiconductor and having a second conductivity type opposite to the first conductivity type.
The third semiconductor layer is made of a compound semiconductor and impurities that give conductivity type are not intentionally introduced, or even if they are, they are introduced only at a low concentration. a step of forming a first semiconductor laminate having a structure in which the first semiconductor laminate is stacked in order; forming a second semiconductor laminate having a mesa portion from the first semiconductor laminate by etching, and introducing InP and Fe onto the second semiconductor laminate; forming a semi-insulating semiconductor layer having semi-insulating properties by a vapor phase epitaxial growth method so as to fill the mesa portion of the second semiconductor stack; a first electrode layer is formed on the opposite side, and on the top surface of the mesa portion of the second semiconductor layer and the top surface of the semi-insulating semiconductor layer,
a second common to those with a continuous extension between them
Forming the semi-insulating semiconductor layer after the step of forming the second semiconductor laminate from the first semiconductor laminate Before the step of (1) introducing an impurity that is InP and imparting conductivity type onto the second semiconductor layered body, or even if it is introduced, the impurity imparting p-type conductivity is introduced only at a low concentration. Not the 4th
(1) Forming the semiconductor layer by atomic layer epitaxial growth so that the semiconductor layer extends on the side surfaces of the mesa portion but does not extend on the top surface, and has a substantially uniform thickness at each portion. A method for manufacturing an embedded compound semiconductor light emitting device.