JPH04242114A - Vibration type angular velocity sensor - Google Patents

Abstract

PURPOSE:To make it possible to achieve a compact configuration and mass production, to make it possible to achieve the large displacement of a vibrating body by an input angular velocity and to obtain the excellent output by forming a sensor by using a semiconductor process technology. CONSTITUTION:A vibrating body 32 which is vibrated in parallel with a substrate 31, flexible supporting bodies 33a, 33b, (33c and 33d) for supporting the vibrating body 32, pairs of vibration driving electrodes 35a and 35b, and 34a and 34b which are attached to the vibrating body 32 and the substrate 31, respectively, and detecting electrodes 36a and 26b for detecting the displacement of the vibrating body 32 are formed of semiconductors made of the same material on the substrate 31. The thickness of the vibration driving electrodes 34a and 34b is made smaller than the thickness of the counter electrodes 35a and 35b. Thus, the electrodes 34a and 34b can be deflected in the vertical direction.

Description

[Detailed description of the invention]

0001

[Industrial Application Field] This invention vibrates a vibrating body, generates a Coriolis force on the vibrating body according to the input angular velocity, and detects the input angular velocity from the displacement of the vibrating body due to the Coriolis force. This relates to the structure of the sensor.

0002

[Prior art] Figure 7 shows the structure of a conventional vibration type angular velocity sensor.
and shown in FIG. FIG. 7 shows an example in which a rectangular prism-shaped vibration beam is used as the vibrating body, and FIG. 8 shows an example in which a tuning fork is used. In FIG. 7, the rectangular prism-shaped vibration beam 11 is connected between both sides 13a and 13b of the U-shaped pedestal 13 by the support wire 12 at each two nodes of natural vibration on two mutually parallel surfaces 11a and 11b in the longitudinal direction. Supported.

[0003] A detection piezoelectric element 14 is bonded to each of the surfaces 11a and 11b of the vibrating beam 11 approximately at the center thereof in the longitudinal direction. In the figure, the detection piezoelectric element 14 on the surface 11b side is hidden and cannot be seen. Also, surfaces 11c, 11 perpendicular to the longitudinal surface 11a of the vibration beam 11
A drive piezoelectric element 15 is bonded to each of the drive piezoelectric elements 15 at substantially the center in the longitudinal direction. In the figure, the driving piezoelectric element 15 on the surface 11d side is hidden and cannot be seen.

[0004] An alternating current voltage is applied to both drive piezoelectric elements 15 to cause the vibration beam 11 to bend and vibrate. In this state, when an angular velocity with the longitudinal direction as the axis is input to the vibrating beam 11, the Coriolis force generated in the vibrating beam 11 causes the vibrating beam 11 to move in a direction perpendicular to the bending vibration direction of the driving piezoelectric element 15. Vibrate. This vibration component is detected as an output voltage by the detection piezoelectric element 14, the distortion of the vibration beam 11 due to the Coriolis force is determined, and the input angular velocity is calculated.

In FIG. 8, drive piezoelectric elements 22 are bonded to both U-shaped outer surfaces 21a and 21b of the tuning fork 21 (the surface 21b side is hidden and cannot be seen), and the tuning fork 2
The twist detection unit 23 is located on the center line of the U-shape on the end surface 21c perpendicular to the U-shaped outer surface 21a of the U-shape 1.
It protrudes vertically from the The twist detection section 23 is formed of a metal plate, and its free end 24 is located between a pair of detection electrodes 25a and 25b.

In this structure, an alternating current voltage is applied to the driving piezoelectric element 22 to cause the tuning fork 21 to bend and vibrate, and an angular velocity is input to the tuning fork 21 at the center of both vibrating pieces with the longitudinal direction as the axis. The torsion detection unit 23 detects torsional vibrations generated in the
Then, the detection electrodes 25a and 25b detect the change in capacitance, determine the displacement of the tuning fork 21 due to the Coriolis force, and calculate the input angular velocity. 7 and 8, driving means for driving piezoelectric elements 15 and 22, detection piezoelectric element 14, torsion detection section 23, and detection electrodes 25a and 2 are shown.
5b and the detection means are omitted from illustration.

[0007]

[Problems to be Solved by the Invention] As described above, the conventional vibrating angular velocity sensor measures minute distortions and displacements of the vibrating beam 11 and tuning fork 21, and determines the angular velocity from these measured values. High precision is required in the dimensions and assembly of each component. However, in the device using the vibrating beam 11 shown in FIG. 7, it is difficult to assemble the vibrating beam 11 to be supported by the support wire 12 with high precision, and in the device using the tuning fork 21 in FIG. It is difficult to attach 23 to the tuning fork 21 and assemble it with the pair of detection electrodes 25a and 25b with high precision.

Furthermore, it is difficult to adhere the driving piezoelectric elements 15, 22 and the detection piezoelectric element 14 to the vibrating beam 11 or the tuning fork 21 with high precision. Furthermore, since the vibrating beam 11 and the tuning fork 21 have a size of several mm to several cm, it is difficult to process them with high precision. Therefore, the conventional vibrating angular velocity sensor has insufficient precision in the dimensions and assembly of each component.

The frequency and vibration components of the vibrating beam 11 and tuning fork 21 may vary due to variations in the processing dimensions and assembly dimensions of each part of the vibrating beam 11 and tuning fork 21, and differences in elastic modulus and thermal expansion coefficient due to differences in the materials of each part. And their output characteristics such as temperature characteristics vary depending on each vibrating angular velocity sensor. For this reason, each vibrating angular velocity sensor requires individual adjustment when measuring angular velocity, so conventional vibrating angular velocity sensors are not suitable for mass production and are not easy to use. Further, since the vibrating beam 11 and the tuning fork 21 are manufactured by machining, it is difficult to miniaturize them.

The present invention solves the drawbacks of the conventional sensor, and provides a small vibrating angular velocity sensor that simplifies the measurement of angular velocity by eliminating the need for individual adjustments, and is excellent in mass production. .

[0011]

[Means for Solving the Problems] The present invention includes a vibrating body that is provided on a substrate and vibrates in parallel with the substrate, and a vibrating body that is supported on the substrate and that vibrates in a direction perpendicular to the substrate. a support body that can be deflected; a pair of vibration driving electrodes that are respectively attached to the vibrating body and the substrate and facing each other in a direction perpendicular to the substrate; and displacement of the vibrating body in a direction perpendicular to the substrate; a detection electrode provided to detect the vibration body, the support body,
The vibration drive electrode and the detection electrode are made of the same semiconductor material.

0012

[Operation] In the present invention configured as described above, the vibrating body, support body, vibration drive electrode, and detection electrode that constitute the vibrating angular velocity sensor are made of the same semiconductor material, so semiconductor process technology is used. can be created by In other words, since it can be created using film-forming methods such as photolithography, etching, CVD (vapor phase growth), and vapor deposition, it has higher dimensional accuracy compared to those created by conventional machining and assembly operations. It is possible to realize miniaturization. Moreover, the influence on the output characteristics caused by the difference in the elastic modulus and thermal expansion coefficient of each part in the conventional example is eliminated for the same reason.

[0013]

DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a plan view of a first embodiment of the present invention, and FIG. 2 is a perspective view taken along the line AA. For example, on a semiconductor substrate 31 such as silicon, a vibrating body 32 is arranged at intervals so as to be able to vibrate in parallel thereto. The vibrating body 32 has a relatively thick rectangular shape and is parallel to the substrate 31.

The vibrating body 32 is supported on the substrate 31 by a support 33, which can be bent in a direction perpendicular to the substrate 31 and in the vibration direction of the vibrating body 32. In this example, the supports 33 are four supports 33a that respectively support the four corners of the rectangular vibrating body 32.
, 33b, 33c, and 33d. As understood from the support 33a in FIG.
One end is connected to one corner of the surface of the vibrating body 32 opposite to the substrate 31, and is extended from this in parallel with the short side of the vibrating body 32 to form a horizontal portion 33a1, and the extended end is connected to the substrate 31 at a right angle. The horizontal part 33a2 is bent and extended outward parallel to the horizontal part 33a2.
The extended end is widened and extended outward parallel to the horizontal part 33a2 to form a horizontal part 33a3, and the extended end is bent at a right angle to reach the substrate 31 and extended to form a vertical part 33a4. The extended end is a fixed part 33a5 that extends parallel to the board 31 and is fixed to the board 31, and includes horizontal parts 33a1, 33a2, 33a3, and fixed part 33a.
5 has a plate shape parallel to the substrate 31, and has a vertical portion 33a4.
has a plate shape parallel to the long side of the vibrating body 32.

Other supports 33b, 33c, 33d
The support body 33 has horizontal parts 33a1, 33a2 and other supports 33b, 33.
The substrate 3 is formed by the corresponding parts of c and 33d.
1 and can be bent in the vertical direction, and the horizontal portion 33a2
, the vertical portion 33a4 and the other supports 33b, 33c,
These corresponding portions of 33d allow the vibrating body 32 to deflect in the vibration direction of the vibrating body 32, that is, in this example, in a direction parallel to the short side of the vibrating body 32.

Vibration driving electrodes 34 and 35 are attached to the substrate 31 and the vibrating body 32, respectively, and are opposed to each other in a direction perpendicular to the substrate 31. That is, in this example, electrode supports 34a1 and 34b1 are provided on the substrate 31 to face both side surfaces parallel to the longitudinal direction of the vibrating body 32, and the vibrating body 3 is provided from the electrode supports 34a1 and 34b1.
A plurality of vibration driving electrodes 34a and 34b parallel to the substrate 31 are arranged perpendicularly to the substrate 31 and integrally formed on the second side. A plurality of vibration driving electrodes 35a are provided on both sides of the vibrating body 32 in the longitudinal direction, each parallel to the substrate 31.
, 35b are arranged vertically and integrally formed with the substrate 31. A plurality of vibration driving electrodes 35a, 3
Each of the electrodes 5b is arranged so as to alternately face each of the plurality of vibration drive electrodes 34a and 34b in a direction perpendicular to the substrate 31.

Detection electrodes 36a and 36b for detecting displacement of the vibrating body 32 in a direction perpendicular to the substrate 31 are provided facing each other on the surface of the vibrating body 32 on the substrate 31 side and on the opposite surface. . The detection electrode 36a is formed on the substrate 31, and the detection electrode 36b has both ends of the vibrating body 32 in the longitudinal direction bent toward the substrate 31 and extended outward from each other on the substrate 31. supported above.

Note that a detection electrode 36a is provided on the substrate 31.
, an insulating film 37 is formed on the outside of the portion where the electrode supports 34a1, 34b1 are formed, and each substrate 3 of the supports 33a, 33b, 33c, 33d is formed on the insulating film 37.
Each fixed part on the first side and the fixed part of the detection electrode 36b are located. An insulating film 37 is formed on one side of the substrate 31.
Terminals 38a, 38b, 38c, 38d, 3 on top
8e is formed, and terminals 38a, 38b, 38c
, 38d and 38e are wirings 39a and 39b, respectively.
, 39c, 39d, 39e, the detection electrode 3
6a, 36b, support body 33c, electrode support part 34a
1,34b1. Vibrating body 32, support body 33a
33d, electrode supports 34a1 and 34b1, detection electrodes 36a and 36b, terminals 38a and 38e, and wiring lines 39a and 39e are all made of the same material, in this example silicon semiconductor.

Next, the operation of the vibration type angular velocity sensor having the above configuration will be explained. Terminal 38c and terminals 38d, 38e
Vibration driving electrodes 35a and 35b formed on the vibrating body 32 by applying an alternating voltage of opposite phase between
and vibration drive electrodes 34a, 3 arranged on the substrate 31.
An electrostatic force is generated between 4b and 4b. Since the vibrating body 32 is supported by flexible supports 33a, 33b, 33c, and 33d, it is driven by this electrostatic force and moves closer to the electrode support 34a1 side or moves closer to the electrode support 34a1.
It vibrates as it approaches the b1 side or parallel to the substrate 31 as shown by an arrow 41.

In this state, when an angular velocity about an axis perpendicular to the vibration direction of the vibrating body 32 and parallel to the substrate 31 is applied to the vibrating body 32 as shown by an arrow 42, the Coriolis force generated in the vibrating body 32 causes vibrations. A vibrational displacement 43 is generated in the body 32 in a direction perpendicular to the substrate 31. Therefore,
The capacitance between the vibrating body 32 and the detection electrode 36a and the capacitance between the vibrating body 32 and the detection electrode 36b change in opposite ways. A capacitance change depending on the input angular velocity is obtained between the terminals 38a, 38b and 38c.

[0021] In the above operation, the vibration driving electrodes 35a and 35b formed on the vibrating body 32
and a vibration driving electrode 34a arranged on the substrate 31.
, 34b must be kept constant so that the electrostatic force does not change in order to drive the vibrating body 32 in a constant manner. On the other hand, in order to improve the sensitivity of detection based on capacitance changes, the displacement of the vibrating body 32 in the direction perpendicular to the substrate 31 should be large.

Therefore, in this embodiment, the substrate 3
The thickness of the vibration drive electrodes 34a, 34b on the first side is made thinner than the thickness of the vibration drive electrodes 35a, 35b on the vibrator 32 side, so that when the vibrator 32 is displaced in a direction perpendicular to the substrate 31, the vibration drive electrodes 34a, 34b on the substrate 31 side are The vibration drive electrodes 34a and 34b are made to bend. Vibration drive electrodes 34a, 34b
The thickness ratio between 35a and 35b is 1:3 to 1:
15, preferably 1:5 to 1:10.

FIG. 3 shows the displacement state of the vibrating body 32 in this embodiment. In FIG. 3, (A) shows a non-driving state and a non-input angular velocity state. (B) to (E) are no-input angular velocity states, and the driving states of the vibrating body 32 are different from each other. That is, (B) is the electrode 34a, 35a
When a voltage is applied between the electrodes 34b and 35b, and the vibrating body 32 is driven to the left in the figure, (c), the voltage between the electrodes 34a and 35a is zero, and a voltage is applied between the electrodes 34b and 35b, and the vibrating body 32 is driven to the left in the figure. When moving to the right from , with velocity v, (D)
When moved to the right, (E) is the electrode 34b, 35b
The voltage between the electrodes 34a and 35a is set to zero, and a voltage is applied between the electrodes 34a and 35a to represent a state where the electrodes are moving from right to left at a speed v.

In the states of (C) and (E), the displacement states of the vibrating body 32 when an angular velocity in a direction perpendicular to the plane of the paper is input are shown in (F) and (G). The direction in which the vibrating body 32 is displaced differs depending on its direction of motion; (F) shows the vibrating body 32 moving away from the substrate 31, and (G) shows the vibrating body 32 displacing toward the substrate 31. ing. This amount of displacement is proportional to the magnitude of the input angular velocity, and the phase of this displacement with respect to the drive signal corresponds to the direction of the input angular velocity. Vibration drive electrode 34a on the substrate 31 side
, 34b are vibration driving electrodes 35a on the vibrating body 32 side.
, 35b, so it can bend. Therefore, even if the vibrating body 32 is displaced in the direction perpendicular to the substrate 31, a predetermined gap between the opposing electrodes of the vibration drive electrodes 34a, 34b and 35a, 35b is maintained, and the vibrating body 32 is displaced in the direction perpendicular to the substrate 31. can do.

In this embodiment, the vibration driving electrodes 34a, 34b on the substrate 31 side are made thinner than the vibration driving electrodes 35a, 35b on the vibrating body 32 side, but the vibration driving electrodes 35a, 35b are made thinner than the vibration driving electrodes 34a, 35b on the vibrating body 32 side. A similar effect can be obtained with the opposite configuration where the thickness is made thinner than 34b. Next, a method for creating this embodiment using semiconductor process technology will be described. FIG. 4 shows an example of the procedure for creating the detection electrodes 36a, 36b, the vibrating body 32, the vibration driving electrodes 34a, 34b, 35a, 35b, and the electrode supports 34a1, 34b1 in this embodiment. (1) to (34) indicate the process order. (1) is the state of the silicon substrate 31, (2)
is subjected to thermal oxidation to form an oxide film (Si02)4 on the surface.
4 was formed. (3) is patterning of the oxide film 44, using photolithography and dry etching. (4) is one in which boron is diffused. This diffusion layer 45 is used for manufacturing safety in order to prevent excessive etching during etching of the wiring portion and the sacrificial layer in (34) described below.

(5) is the removal of the oxide film 44, and (6) is the removal of the P
type epitaxial growth or polysilicon film formation, (7
) is patterning of the film formed in (6), (8)
is n-type epitaxial growth or Si02 or PS
G film formation (9) is the patterning of the film formed in (8), leaving the missing part of the film in (7). Below (1
0) to (33) P-type epitaxial growth or polysilicon film formation and n-type epitaxial growth or Si0
2 or PSG film formation and patterning thereof are repeated, and the detection electrodes 36a, 36b and the vibrating body 32 are formed.
and vibration drive electrodes 34a, 34b, 35a, 35
b and the electrode supporting parts 34a1 and 34b1 are formed by P-type epitaxial growth or polysilicon film formation, and the space between them is formed by N-type epitaxial growth or Si
It is formed as a sacrificial layer by film formation of O2 or PSG.

In addition, in FIG. 4, P-type epitaxial growth or polysilicon film formation is shown by distributing points.
N-type epitaxial growth or Si02 or PSG
The film formation is indicated by diagonal hatching from the upper left to the lower right. (34) is a step of etching away the n-type silicon film, SiO2, or PSG sacrificial layer left after film formation and patterning. The vibration type angular velocity sensor according to the present invention can be created on the silicon substrate 31 using the procedure described above.

FIG. 5 is a plan view of a second embodiment of the present invention, and FIG. 6 shows a cross section taken along line B--B. In this example,
Two movable parts are arranged in parallel, and the two movable parts are connected at both ends in the longitudinal direction by a flexible connecting body. Further, each movable part has a vibrating body in the center part in the longitudinal direction, and supports are provided on both sides of the vibrating body,
A driving section is disposed via this support.

A rectangular plate-shaped vibrating body 51-1 is provided on and opposite to the substrate 31 so as to be able to vibrate parallel to the substrate 31 in its longitudinal direction. Flexible rectangular frame-shaped supports 52a-1 and 52b-1 are integrally connected to both ends of the vibrating body 51-1 in the longitudinal direction so that these extend respectively,
Drive parts 53a-1, 53b-1 are integrally extended in the longitudinal direction of the vibrating body 51-1 at the outer ends of the supports 52a-1, 52b-1, respectively.
On both sides of b-1, comb-shaped vibration drive electrodes 54a-1 and 54b-1 are integrally protruded in parallel with the substrate 31, respectively. Additional mass portions 55a-1 and 55a-1 extend to the outer ends of the drive portions 53a-1 and 53b-1, respectively.
55b-1 is integrally formed. These vibrating bodies 51
-1, support bodies 52a-1, 52b-1, drive part 53a-
1, 53b-1, vibration drive electrode 54a-1, 54b-
1. The additional mass parts 55a-1 and 55b-1 are configured as a movable part using a single plate.

[0030] In exactly the same way, the vibrating body 51-2 and the support body 52
a-2, 52b-2, drive section 53a-2, 53b-2,
Vibration drive electrodes 54a-2, 54b-2, additional mass part 5
5a-2 and 55b-2 are constituted by a single plate as a movable part, and these vibrating bodies 51-1 and 51-2 have the same vibration direction and are arranged side by side. Additional mass part 5
5a-1, 55a-2 are connected by a flexible connecting body 56a, and the additional mass parts 55b-1, 55b-2 are connected by a flexible connecting body 56b. Additional mass parts 55a-1, 55b-1, 55a-2, 55
b-2 are flexible supports 57a-1 and 57b-1, respectively.
, 57a-2, 57b-2, supported by the substrate 31,
And the vibrating bodies 51-1, 51-2 are flexible supports 58-1
, 58-2 are supported by the substrate 31, respectively. These supports 57a-1, 57b-1, 57a-2, 57b
-2, 58-1, 58-2, the two movable parts are supported parallel to the substrate 31 so as to be able to vibrate. In addition, supports 52a-1, 52b-1 and 52a-2, 5
2b-2, the vibrating bodies 51-1 and 51-2 can be displaced in a direction perpendicular to the substrate 31, respectively.

As shown in FIG. 6, the vibration driving electrode 54b-
The substrate 31 supports the same number of vibration drive electrodes 59b-2 and 60b-2 as the vibration drive electrode 54b-2, which are arranged in the vibration direction with the two vibration surfaces spaced apart from each other. Other vibration drive electrodes 54a-1, 54b-1, 54a-2
Similarly, the vibration driving electrodes 59a-1 and 60
a-1, 59b-1, 60b-1, 59a-2, 60a
-2 is supported by the substrate 31. The vibration drive electrodes of these movable parts and the vibration drive electrodes supported by the substrate 31 are connected to the vibration bodies 51-1 and 5 by an electrostatic linear motor drive method.
1-2 is vibrated in its longitudinal direction. Vibrating body 51-
Detection electrodes 61a-1 and 61a-2 are provided facing the substrate 31 side of each of the substrates 1 and 51-2, respectively, and detection electrodes 61b-1 and 61b are provided facing the opposite side of the substrate 31, respectively.
-2 is provided.

In this second embodiment, between the vibration drive electrode 54a-1 and 59a-1, 60a-1, 54
At the same time, an alternating driving voltage is applied between b-1 and 59b-1, 60b-1 using an electrostatic linear motor method, and at the same time, the vibration driving electrodes 54a-2 and 59a are applied in opposite phase to this alternating driving voltage.
-2,60a-2, between 54b-2 and 59b-2,6
0b-2, an alternating driving voltage is applied using an electrostatic linear motor method. Therefore, the vibrating body 51-1 and the vibrating body 51-2
vibrate in opposite directions in their longitudinal directions. The angular velocity around the axis parallel to this vibration direction is the vibrating body 5
When input to 1-1 and 51-2 simultaneously, the vibrating body 51-
1 and 51-2 are each vibratedly displaced in opposite directions perpendicular to the substrate 31. Based on this displacement, the vibrating body 51-1 and the detection electrode 61a-
1 and 61b-1, and the vibrating body 51-
The input angular velocity can be detected by additively detecting each capacitance change of 2 and the detection electrodes 61a-2 and 61b-2.

In the second embodiment as described above, the vibration driving electrodes 54a-1, 54b-1, 54a-2, 5
4b-2 is a vibration driving electrode 59 supported by the substrate 31.
a-1, 60a-1, 59b-1, 60b-1, 59a
-2, 60a-2, 59b-2, and 60b-2, respectively. Therefore, the electrode 54a-1 for vibration driving in the vertical direction with respect to the substrate 31 by inputting the angular velocity,
Displacement of 54b-1, 54a-2, and 54b-2 is electrostatically suppressed. However, the vibrating bodies 51-1, 51-2 and the driving parts 53a-1, 53b-1, 53a-2, 53b-2 are supported by supports 52a-1, 52b, which can be bent in a direction perpendicular to the substrate 31. -1, 52a-2, 52b-2, so when the angular velocity is input, the drive unit 53
Compared to a-1, 53b-1, 53a-2, and 53b-2, the vibrating bodies 51-1 and 51-2 can be displaced to a greater extent in the direction perpendicular to the substrate 31.

Furthermore, additional mass parts 55a-1, 55b-
1, 55a-2, 55b-2 are driving parts 53a-1, 5
3b-1, 53a-2, 53b-2, the additional mass portions 55a-1, 55
a-2, 55b-1, 55b-2 are coupled to each other, and the additional mass parts 55a-1, 55a-
2, 55b-1, 55b-2 receive vertical displacement opposite to that of the substrate 31, and act to suppress each other's displacement, and the vibration driving electrodes 54a-1, 54b-1, 54a
-2, 54b-2 in the direction perpendicular to the substrate 31 is further suppressed. Additional mass parts 55a-1, 55b-1, 55
a-2 and 55b-2 are omitted, and drive parts 53a-1 and 53
a-2 may be directly coupled with the flexible coupling body 56a, and the drive parts 53b-1 and 53b-2 may be directly coupled with the flexible coupling body 56b.

[0035]

As explained above, according to the present invention, a vibration type angular velocity sensor can be manufactured using semiconductor process technology, and has the advantage of being miniaturized and excellent in mass production. In addition, since it can be manufactured with high dimensional accuracy, stable performance can be obtained, no individual adjustment is required during use, and angular velocity measurement can be simplified.

Furthermore, one of the pair of vibration drive electrodes facing each other is made thinner and more flexible than the other;
Alternatively, input can be achieved by interposing a flexible support between the vibrating body and the drive unit, or by providing two vibrating bodies and connecting them with a flexible connecting body, or by using these together. Displacement due to angular velocity can be reduced in the drive section to achieve stable driving, and increased in the vibrator to improve output sensitivity. Therefore, a vibration type angular velocity sensor with excellent performance can be obtained.

[Brief explanation of the drawing]

FIG. 1 is a plan view of a first embodiment of a vibrating angular velocity sensor according to the present invention.

FIG. 2 is a perspective view taken along the line AA in FIG. 1;

FIG. 3 is a diagram showing the displacement state of the vibrating body in the first embodiment of the vibrating angular velocity sensor according to the present invention.

FIG. 4 is a diagram showing an example of the procedure for creating the first embodiment of the vibration type angular velocity sensor according to the present invention.

FIG. 5 is a plan view of a second embodiment of the vibration type angular velocity sensor according to the present invention.

FIG. 6 is a sectional view taken along line BB in FIG. 5;

FIG. 7 is a perspective view of an example of a conventional vibration type angular velocity sensor.

FIG. 8 is a perspective view of another example of a conventional vibration type angular velocity sensor.

[Explanation of symbols]

11 Vibration beam 14 Piezoelectric element for detection 15 Piezoelectric element for drive 21 Tuning fork 22 Piezoelectric element for drive 23 Torsion detection part 31 Substrate 32 Vibrating body 33a, 33b, 33c, 33d Support body 34a,
34b Vibration drive electrodes 35a, 35b Vibration drive electrodes 36a, 36b Detection electrodes 51-1, 51-2 Vibrating bodies 52a-1, 52a-2, 52b-1, 52b-2
Supports 53a-1, 53a-2, 53b-1, 53
b-2 Drive section 54a-1, 54a-2, 54b
-1, 54b-2 Vibration drive electrode 55a-1, 55a-2, 55b-1, 55b-2
Additional mass parts 56a, 56b Connecting bodies 57a-1, 57a-2, 57b-1, 57b-2
Supports 58-1, 58-2 Supports 59a-1, 59a-2, 59b-1, 59b-2
Vibration drive electrodes 60a-1, 60a-2, 60b-1, 60b-2
Vibration drive electrodes 61a-1, 61a-2, 61b-1, 61b-2
Detection electrode

Claims (4)

[Claims] [Claim 1] A substrate, a vibrating body disposed on the substrate and vibrating parallel to the substrate, the vibrating body being supported on the substrate and deflecting in the vibration direction and in a direction perpendicular to the substrate. a pair of vibration drive electrodes each attached to the vibrating body and the substrate and facing each other in a direction perpendicular to the substrate; and detecting displacement of the vibrating body in a direction perpendicular to the substrate. 1. A vibrating angular velocity sensor comprising: a detection electrode provided as shown in FIG. 2. Claim 1, wherein one of the pair of vibration drive electrodes is thinner than the other.
The vibration type angular velocity sensor described. 3. The vibration type angular velocity sensor according to claim 1, wherein the vibrating body is provided between the vibration drive electrode and the detection electrode with a flexible support interposed therebetween. 4. The vibrating angular velocity sensor according to claim 1, wherein two of the vibrating bodies are provided, and these vibrating bodies are mutually coupled by a flexible connecting body.