JPH04232766A - Preparation of ion flow recording head - Google Patents

Abstract

PURPOSE:To form a highly detailed electrode pattern after a through-hole is formed in an ion flow recording head. CONSTITUTION:A through-hole 1 is filled with a hole filling agent 2 and a photoresist 5 is applied to an electrode layer 4 to obtain a uniform photoresist coating surface and an electrode pattern 4 is formed to said coating surface by photolithographic technique. Or, a lift-off type resist is applied to a substrate having a through hole formed thereto and, next, the negative image of the electrode pattern is patterned to remove the resist only from the part of the electrode pattern and, subsequently, the electrode layer is formed to the substrate to remove the lift-off type resist. Whereupon, the electrode layer on the resist is removed along with the resist and only the electrode layer directly bonded to the substrate remains as the electrode pattern. By this method, the electrode pattern is formed.

Description

[Detailed description of the invention]

0001

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing an ion flow recording head.

0002

2. Description of the Related Art FIG. 4 is a block diagram of a recording head that forms an electrostatic latent image using ion flow.
An ion flow recording head 52 is provided opposite to. In the ion flow recording head 52, a high-density through hole array 52a of, for example, 300 dpi is formed on an insulating substrate, and a common electrode 52b and individual electrodes 52c are formed on the upper and lower surfaces of the substrate at each position of the through hole array 52a. The configuration is such that a predetermined voltage can be applied independently between the common electrode 52b and the individual electrodes 52c at each through hole. This recording head faces the dielectric layer 53a on the drum 53. Corona ions generated from the corona discharger 51 are transferred to the through hole 52 where an electric field is generated by applying a voltage.
a and adheres to the dielectric layer 53a, thereby forming an electrostatic latent image.

After the dielectric drum 53 on which the electrostatic latent image has been formed is developed, the image is transferred to a recording medium, and the dielectric drum 53 is initialized and cleaned to form the next electrostatic latent image. (Illustration omitted).

[0004] Since the through holes of the ion flow recording head have a fine pattern with high density as described above, a method of opening them by etching is used.

Conventionally, electrodes are formed after the through holes are formed because it is possible to form a pattern with higher definition by directly aligning the electrode pattern with the formed through holes.

[0006]

[Problems to be Solved by the Invention] However, since the through holes have already been formed and the electrode layer has been formed, it is difficult to apply photoresist to form an electrode pattern thereon by spin coating or other methods. When applied by
There was a problem in that the photoresist accumulated around the through hole, making it difficult to coat the photoresist with a uniform thickness, and making it impossible to form an electrode pattern with a high yield.

SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a method for manufacturing an ion flow recording head that can form an electrode pattern with a high yield.

[0008]

[Means for Solving the Problems] In order to achieve the above object, a method for manufacturing an ion flow recording head of the present invention includes the following steps:
A step of forming a through-hole in the substrate, a step of filling the formed through-hole with a hole-filling agent, a step of forming an electrode layer on the substrate, and a step of filling the through-hole with the hole-filling agent. The method includes a step of applying a photoresist to the substrate, a step of patterning the photoresist, and a step of etching the electrode layer after patterning the photoresist to form an electrode pattern.

[0009] Before the step of filling the formed through-hole with the hole-filling agent, a step of treating the surface of the substrate on which the electrode layer is formed to repel the hole-filling agent may be provided.

In order to achieve the above object, the method for manufacturing an ion flow recording head of the present invention includes a step of forming a through hole in a substrate, and after forming the through hole, forming an electrode pattern on the substrate. a step of applying a lift-off type resist to the surface; a step of patterning a negative image of an electrode pattern on the applied lift-off type resist;
After patterning a negative image of the electrode pattern on a lift-off type resist, forming an electrode layer on the surface of the substrate on which the electrode pattern is to be formed, and after the electrode layer is formed,
and a step of removing a lift-off type resist.

[0011] Before the step of applying the lift-off type resist, a step of filling the formed through hole with a resist of the same type as the lift-off type resist may be provided.

0012

[Function] After the through-holes are filled with a hole-filling agent, by applying photoresist on the electrode layer, the substrate becomes a continuous surface, which reduces the amount of photoresist that accumulates around the through-holes. It becomes possible to apply the resist uniformly.

When a lift-off type resist is applied to the surface of the substrate on which the electrode pattern is formed after forming the through holes, the lift-off type resist and the electrode layers other than the individual electrodes are removed together, and the electrode layers are removed individually. Can form electrodes. Further, when filling the through holes with a lift-off type resist, it is possible to uniformly apply the lift-off type resist to the surface of the substrate after that.

[0014]

Embodiments Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

First, a first embodiment of the present invention will be explained based on FIG.

A photosensitive glass plate 1 (eg, trade name "PEG", manufactured by HOYA Co., Ltd.) having a thickness of 0.4 mm is prepared as a substrate. For example, a photomask in which a hole array shape with a hole diameter of 50 to 100 μm is formed is placed on the photosensitive glass plate 1, exposed to light, and thermally developed to crystallize the hole array shape portion. For example, use an etching solution with a hydrofluoric acid concentration of 6% and a solution temperature of 20°C at a shower pressure of 3.0 kg/cm2 to approx.
Etching is performed by spraying for 0 minutes. Then, Figure 1 (a
), a through hole array 1a is formed in the substrate 1. Note that due to the effect of side etching, the pore diameter is larger in the portion closer to the etched surface.

[0017] Then, using a squeegee 3, the hole-filling agent 2 is filled into each through-hole from the side with the larger hole diameter (FIG. 1(b)). Then, since the through-holes are filled with the hole-filling agent 2, the surface on the side filled with the hole-filling agent has no holes and becomes a continuous and substantially smooth surface. The hole-filling agent 2 is preferably a paste-like substance that can be removed later with a solvent or the like and that can sufficiently penetrate into the through-hole, and more preferably a paste-like substance that can be heat-treated or the like after filling. Use a hardenable substance. For example, a positive photosensitive resin such as Positive Resist 809 (trade name: manufactured by Nagase Sangyo Co., Ltd.), a photosensitive acrylic resin in the form of a solution, or the like can be used.

Next, the hole-filling agent is hardened by heat treatment, etc.
An electrode layer 4 is formed by sputtering or the like on the side filled with the hole filling agent (FIG. 1(c)). Note that since the through-hole 1a is blocked by the hole-filling agent 2, the electrode layer is covered with the through-hole 1a.
It does not get inside and adhere to the inner surface of the through hole.
Therefore, short circuits with electrodes formed on the opposite surface are prevented.

Next, a photoresist is applied onto the electrode layer 4 while the substrate 1 is being spun (spin coating method).
, a photoresist film 5 is formed on the electrode layer 4 (FIG. 1(d)). Since the through holes are filled to form a continuous smooth surface, the photoresist does not accumulate around the through holes 1a, and a photoresist film 5 having a uniform thickness can be formed. As the photoresist, the same substance as the hole-filling agent, for example, Positive Resist 809 (trade name: manufactured by Nagase Sangyo Co., Ltd.), etc. can be used.

Next, using the so-called photolithography technique, a photomask 6 on which individual electrode patterns are formed is placed on the photoresist film 5 (FIG. 1(e)), and the photoresist is exposed and developed. (FIG. 1(f)), the electrode layer 4 is etched with a predetermined etching solution to form an individual electrode pattern 4 (FIG. 1(g)), and the photoresist on the individual electrode pattern 4 is etched. (Figure 1(h)).

Then, the filler 2 in the through hole 1a is removed using a predetermined solvent (FIG. 1(i)). As a solvent,
For example, acetone, ethanol, etc. can be used.

Next, a common electrode is formed on the opposite surface of the substrate by sputtering, vapor deposition, etc. (not shown). Since the surface on the opposite side of the substrate has the smaller diameter of the through hole 1a, the electrode material that has flown into the through hole portion does not adhere to the side surface of the through hole 1a. Note that the filler 2 in the through hole may be removed after forming the common electrode on the opposite surface.

In the above embodiment, the hole-filling step was performed before the formation of the electrode layer, but the hole-filling step may be performed before the photoresist is applied. For example, the hole-filling step may be performed after the formation of the electrode layer.

Furthermore, although the through-holes are filled from the etched side, ie, the side where the hole diameter is larger, the holes may be filled from the side where the hole diameter is smaller.

Furthermore, in the above embodiment, photolithography technology is not used on the common electrode side, but the common electrode also requires a predetermined electrode pattern. Therefore, if photolithography technology is required, the common electrode side Similarly to the above embodiment, the through holes may be filled with a filler and then coated with photoresist.

Next, a second embodiment will be explained based on FIG. 2.

This embodiment is different from the first embodiment in that it prevents contamination of the substrate surface due to the application of a hole-filling agent.

First, in the same manner as in the first embodiment, a row of through holes 1a are formed in the substrate 1 (FIG. 2(a)).

Next, the surface 1b of the substrate 1 on which the hole is to be filled is
Then, the surface is treated to repel the hole-filling agent (Fig. 2(b)
)). For example, the surface treatment agent 7 is attached to a brush or cloth, and the surface of the substrate is rubbed with the surface treatment agent 7. As a surface treatment agent, when the hole filling agent is water-based,
For example, a mold release agent such as Teflon powder or paraffin can be used.

Next, in the same manner as in the first embodiment, the through-holes are filled with a hole-filling agent (FIG. 2(c)).

Surface treatment is applied to the surface 1b of the substrate,
No hole-filling agent 2 remains, and the hole-filling agent is filled only into the through holes.

Next, the surface treatment agent 7 on the surface 1b of the substrate is removed by, for example, reverse sputtering. Note that if there is no problem in the formation of the electrode film in the subsequent process in terms of the adhesion strength of the electrode film, the smoothness of the surface of the substrate, etc., there is no need to remove it.

Next, the electrode layer 4 is formed on the surface of the substrate by spin coating in the same manner as in FIGS. 1(c) to 1(i) of the first embodiment. The hole-filling agent 2 is not attached to the surface 1b of the substrate, so that the electrode layer can be adhered to the surface of the substrate sufficiently without peeling off.

In this embodiment, the surface treatment is performed after the through-holes 1a are formed, but the surface treatment may be performed before the through-holes are formed if there is no problem with etching.

Next, a third embodiment of the present invention will be explained based on FIG.

As a substrate, for example, a photosensitive glass plate 1 with a thickness of 0.4 mm (eg, product name "PEG3": manufactured by HOYA Co., Ltd.
(manufactured by). For example, a photomask in which a hole row shape with a hole diameter of 50 to 100 μm is formed is placed on a photosensitive glass plate 1.
The hole array shape portion is crystallized by exposure and heat development. For example, hydrofluoric acid concentration is 6%, liquid temperature is 20℃
Etching is performed by spraying an etching solution at a shower pressure of 3.0 kg/cm2 for about 30 minutes. Then, Figure 1 (
As shown in a), a row of through holes 1a are formed in the substrate 1. Note that due to the effect of side etching, the pore diameter is larger in the portion closer to the etched surface.

Next, a lift-off type resist 15 is applied to the etched side of the substrate by spin coating or the like (FIG. 3(b)).

[0038] As a lift-off type resist, for example, a deep UV resist for lift-off "LMR-33"
(Product name: manufactured by Fuji Pharmaceutical Co., Ltd.) can be used. Note that this embodiment uses a positive type, and the exposed portion is removed.

Next, a photomask 1 with the individual electrode patterns hollowed out, that is, having a negative image of the electrode pattern is prepared.
6 on the resist 15 and exposed (FIG. 3(c)
).

Then, the resist 15a in the individual electrode pattern portion is exposed.

[0041] Then, when development is performed with a predetermined developer such as LMR developer C type, the exposed portion is developed and removed, and the substrate surface is exposed at the individual electrode pattern portion (FIG. 3(d)). .

Next, an electrode film 14 is formed by sputtering or the like on the surface on which the resist 15 is formed (FIG. 3).
(e)). Then, an electrode film is attached to the entire surface, and the electrode film is directly formed on the substrate 1 on the resist 15 and on the portions of the individual electrode patterns from which the resist has been removed. Note that since the through hole 1a is filled with resist, there is no adhesion of the electrode film to the inner surface of the through hole.

Next, the resist 15 is removed using a predetermined stripping solution such as acetone or dimethylformamide (FIG. 3).
(f)). The resist filling the through holes and the resist on the surface of the substrate are peeled off together with the electrode film. Therefore, an electrode film in the shape of an individual electrode pattern formed directly on the substrate remains on the substrate. This completes the individual electrode pattern. In this embodiment, since the electrode layer is not etched, disconnection due to over-etching does not occur. Furthermore, since the electrode film can be thickened, wiring with low resistance is possible.

A common electrode is formed on the other surface of the substrate by sputtering, vapor deposition, etc. (not shown). Note that the resist may be peeled off after forming the common electrode. Furthermore, if the common electrode also requires a predetermined electrode pattern, the common electrode may be formed using a lift-off type resist as in this embodiment.

Further, in order to uniformly apply the resist, hole filling processing may be performed in advance.

That is, the same hole-filling process as in the first embodiment may be performed in advance. At this time, if the through-holes are filled with a resist of the same type as the lift-off type resist used in this example, the resist (hole-filling agent) will be transferred to the substrate when filling the through-holes. It does not matter if it adheres to the surface. A lift-off type resist is further applied on top of this, and during development (Figure 3(d)),
The resist in the individual electrode pattern portions is removed together because the resist used for filling the holes and the resist used for subsequent application of the resist film are of the same type.

Furthermore, although a positive type resist was used as the lift-off type resist in this embodiment, it is also possible to use a negative type lift-off type resist if the pattern of the exposure mask is reversed.

[0048]

According to the present invention, with the above structure, it is possible to form an electrode pattern having a highly precise shape after forming the through holes.

[Brief explanation of the drawing]

FIG. 1 is an explanatory diagram illustrating each process of a first embodiment of the present invention.

FIG. 2 is an explanatory diagram illustrating each process of a second embodiment of the present invention.

FIG. 3 is an explanatory diagram illustrating each process of a third embodiment of the present invention.

FIG. 4 is a configuration diagram of a recording head that forms an electrostatic latent image using ion flow.

[Explanation of symbols]

1 Board 1a Through hole 1b　Surface on which the electrode layer is formed 2 Hole filler 4,14 Electrode layer 5 Photoresist 15 Lift-off type resist

Claims (5)

[Claims] 1. A step of forming a through-hole in a substrate, a step of filling the formed through-hole with a hole-filling agent, a step of forming an electrode layer on the substrate, and a step of filling the through-hole with the hole-filling agent. After being filled, applying a photoresist on the electrode layer, patterning the photoresist, and after patterning the photoresist,
A method for manufacturing an ion flow recording head, comprising the step of etching the electrode layer to form an electrode pattern. 2. In claim 1, before the step of filling the formed through-hole with a hole-filling agent, the step of performing a treatment to repel the hole-filling agent on the surface of the substrate on which the electrode layer is formed. A method of manufacturing an ion flow recording head, comprising: 3. A method for manufacturing an ion flow recording head according to claim 1 or 2, wherein the step of filling the formed through hole with a hole filling agent is performed before forming the electrode layer. . 4. A step of forming a through hole in a substrate, a step of applying a lift-off type resist to a surface of the substrate on which an electrode pattern is to be formed after forming the through hole, and a step of applying a lift-off type resist to the surface of the substrate on which an electrode pattern is to be formed; a step of patterning a negative image of the electrode pattern on the resist of the lift-off type, and a step of forming an electrode layer on the surface of the substrate on which the electrode pattern is formed after patterning the negative image of the electrode pattern on the lift-off type resist. . A method for manufacturing an ion flow recording head, comprising the steps of: removing the lift-off type resist after the electrode layer is formed. 5. In claim 4, before the step of applying the lift-off type resist, the formed through hole is filled with a resist of the same type as the lift-off type resist to fill the through hole. 1. A method of manufacturing an ion flow recording head, comprising the steps of: