JPH04226088A - Josephson element and its manufacture - Google Patents
Josephson element and its manufactureInfo
- Publication number
- JPH04226088A JPH04226088A JP3125632A JP12563291A JPH04226088A JP H04226088 A JPH04226088 A JP H04226088A JP 3125632 A JP3125632 A JP 3125632A JP 12563291 A JP12563291 A JP 12563291A JP H04226088 A JPH04226088 A JP H04226088A
- Authority
- JP
- Japan
- Prior art keywords
- josephson
- manufacturing
- josephson element
- phase
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 28
- 239000002887 superconductor Substances 0.000 claims abstract description 31
- 238000000034 method Methods 0.000 claims abstract description 28
- 239000000203 mixture Substances 0.000 claims abstract description 4
- 239000000463 material Substances 0.000 claims description 4
- 238000001354 calcination Methods 0.000 claims 1
- 238000000465 moulding Methods 0.000 claims 1
- 238000010298 pulverizing process Methods 0.000 claims 1
- 238000005245 sintering Methods 0.000 claims 1
- 238000009413 insulation Methods 0.000 abstract 1
- 230000005668 Josephson effect Effects 0.000 description 6
- 239000000919 ceramic Substances 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 3
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 241000238366 Cephalopoda Species 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 235000010216 calcium carbonate Nutrition 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- HTUMBQDCCIXGCV-UHFFFAOYSA-N lead oxide Chemical compound [O-2].[Pb+2] HTUMBQDCCIXGCV-UHFFFAOYSA-N 0.000 description 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N lead(II) oxide Inorganic materials [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 229910000018 strontium carbonate Inorganic materials 0.000 description 1
- LEDMRZGFZIAGGB-UHFFFAOYSA-L strontium carbonate Chemical compound [Sr+2].[O-]C([O-])=O LEDMRZGFZIAGGB-UHFFFAOYSA-L 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/10—Junction-based devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/10—Junction-based devices
- H10N60/12—Josephson-effect devices
- H10N60/124—Josephson-effect devices comprising high-Tc ceramic materials
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Compositions Of Oxide Ceramics (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明はジョセフソン素子および
その製造方法に係り、より詳細にはＢｉ系高温超伝導体
を通常の方法で線材化して冷却圧延方法を使用したジョ
セフソン層およびこれを製造するジョセフソン素子およ
びその製造方法に関する。[Field of Industrial Application] The present invention relates to a Josephson device and a method for manufacturing the same, and more particularly to a Josephson layer formed by forming a Bi-based high-temperature superconductor into a wire by a conventional method and using a cooling rolling method. The present invention relates to a Josephson device to be manufactured and a method for manufacturing the same.
【０００２】0002
【従来の技術】ジョセフソン効果と２個の超伝導対間に
絶縁物を挿入する構造（ｓｕｐｅｒｃｏｎｄｕｃｔｏｒ
−ｉｎｓｕｌａｔｏｒ−ｓｕｐｅｒｃｏｎｄｕｃｔｏｒ
，ＳＩＳ）においてみられるように、電流が０より一定
の電流値に至るまで電流の発生がなく、一定の条件下で
はその間に絶縁体が存在するにもかかわらず、一方の超
伝導物質より他方の超伝導物質に電流が流れる現象を言
い、ジョセフソン素子は特にスイッチ回路に利用して超
高速コンピュータ素子を製造することができるので、か
なり注目されている。[Prior Art] Josephson effect and a structure in which an insulator is inserted between two superconducting pairs (superconductor
-insulator-superconductor
, SIS), no current is generated until the current reaches a certain current value from 0, and under certain conditions, one superconducting material is more sensitive to the other than the other, despite the presence of an insulator between them. Josephson devices are attracting considerable attention because they can be used in switch circuits to manufacture ultra-high-speed computer devices.
【０００３】高温超伝導体と低温超伝導体の物性の相違
により、低温超伝導体の技術を高温超伝導技術に適用す
ることはできない。高温超伝導体は多孔性であり接着長
さが非常に短いので、厚さが数ナノメートルの絶縁層の
良好な製造は極めて困難である。Due to the difference in physical properties between high temperature superconductors and low temperature superconductors, low temperature superconductor technology cannot be applied to high temperature superconductor technology. The porous nature of high temperature superconductors and the very short bond lengths make successful production of insulating layers several nanometers thick extremely difficult.
【０００４】従って、前記ＳＩＳ構造の代わりにマイク
ロブリッジ、サーフェイスコンタクトおよび点接触（ｍ
ｉｃｒｏ−ｂｒｉｄｇｅ，ｓｕｒｆａｃｅ ｃｏｎｔ
ａｃｔおよびｐｏｉｎｔ ｃｏｎｔａｃｔ）のごとき
構造を利用して高温超伝導体からジョセフソン効果を得
ようとしたが、これに関する成功が報告された例は殆ど
みられない。Therefore, instead of the SIS structure, microbridges, surface contacts and point contacts (m
icro-bridge, surface cont.
Attempts have been made to obtain the Josephson effect from high-temperature superconductors using structures such as act and point contacts, but there have been few reports of success in this regard.
【０００５】従前の技術に関し、より詳述すれば次の通
りである。[0005] The conventional technology will be described in more detail as follows.
【０００６】ジョセフソン素子の製作技術は低温超伝導
体を基本として開発され、その代表的方法はアイ・ビ・
エム，ジー・レス、ディベロップメント２４（２）（１
９８０年３月）〔ＩＢＭ Ｊ．Ｒｅｓ．Ｄｅｖｅｌｏ
ｐ．，２４（２）（Ｍａｒｃｈ１９８０）〕の第１９５
−２０４頁においてジェー、エッチ、グレイナー（Ｊ．
Ｈ．Ｇｒｅｉｎｅｒ）等が発表した「ジョセフソンＩＣ
の製造方法」および同第１８８−１９４頁においてアイ
・エイムズ（Ｉ．Ａｍｅｓ）が発表した「ジョセフソン
ＩＣの製造に関する素材およびプロセスの再考」に記述
されている通りである。これを図４を参照して説明する
と、図４はジョセフソン接合素子の断面を示し、ここで
重要なことはＭ２，Ｉｎ２Ｏ３，Ｍ３層である。Ｍ２の
Ｐｂ−Ｉｎ−ＡｕとＭ３のＰｂ−Ｂｉ（Ｍ３）層は超伝
導体であり、Ｍ２上に成長させたＰｂＯ＋Ｉｎ２Ｏ３酸
化物層（Ｍ４）は絶縁層であり、これらの接合がジョセ
フソン接合を形成する。Ｍ２層はＡｕ，Ｐａｂ，Ｉｎの
順にそれぞれ４．５ｎｍ，１６０ｎｍ，３５ｎｍの厚さ
で蒸着して形成する。これらは常温で相互拡散を起して
合金となる。絶縁層として作動するＩｎ２Ｏ３は２．７
Ｐａ，Ｏ２雰囲気の下で２４℃および７０℃の温度でそ
れぞれ３０分ずつ熱処理を行うか、アール・エフ酸化（
ｒｆ ｏｘｉｄａｔｉｏｎ）させて形成する。Ｍ３層
は絶縁層の形成後、５×１０−５Ｐａの真空度でＰｂ−
Ｂｉ（２９重量％）の合金を原料として直接蒸着させる
。[0006] Josephson device manufacturing technology was developed based on low-temperature superconductors, and a typical method is the I.B.
M, G Res, Development 24(2)(1
March 980) [IBM J. Res. Develo
p. , 24(2) (March 1980)] No. 195
- On page 204, J. H., Greiner (J.
H. Greiner) announced “Josephson IC”
188-194, published by I. Ames on pages 188-194 of the same. This will be explained with reference to FIG. 4. FIG. 4 shows a cross section of a Josephson junction element, and what is important here are the M2, In2O3, and M3 layers. The Pb-In-Au of M2 and the Pb-Bi (M3) layer of M3 are superconductors, and the PbO+In2O3 oxide layer (M4) grown on M2 is an insulating layer, and their junction is a Josephson junction. form. The M2 layer is formed by depositing Au, Pab, and In in this order to a thickness of 4.5 nm, 160 nm, and 35 nm, respectively. These materials undergo interdiffusion at room temperature to form an alloy. In2O3, which acts as an insulating layer, is 2.7
Heat treatment is performed at 24°C and 70°C for 30 minutes each under Pa, O2 atmosphere, or RF oxidation (
rf oxidation). After forming the insulating layer, the M3 layer is made of Pb-
An alloy of Bi (29% by weight) is directly deposited as a raw material.
【０００７】このような方法を高温超伝導体に利用する
ことは、高温超伝導体が酸化物であり、その表面が非常
に多孔性であり、不純物が多いので、数十オングストロ
ームの薄い絶縁層の均一な形成が不可能であるので困難
である。[0007] Application of such a method to high-temperature superconductors is difficult because high-temperature superconductors are oxides and their surfaces are extremely porous and contain many impurities. It is difficult because it is impossible to uniformly form the film.
【０００８】その他高温超伝導体を利用したジョセフソ
ン接合素子の製造は現在実験段階にあり、図５（ａ）〜
（ｆ）のような方法により弱い結合を作っている。更に
、分けて説明すると次の通りである。The production of Josephson junction devices using other high-temperature superconductors is currently in the experimental stage, and is shown in Figures 5(a) to 5(a).
A weak bond is created by the method shown in (f). Further, the explanations are as follows.
【０００９】図５（ａ）は点接触方法であり、Ｎｂ紹任
導体を鋭く形成し（直径０．１ｍｍ）、スプリングを利
用して高温超伝導体に機械的に押圧する方法であり、ジ
ョン、モレランド（Ｊｏｈｎ Ｍｏｒｅｌａｎｄ）等
がＡｐｐｌ．ｐｈｙｓ．Ｌｅｔｔ．５１（７）（１９８
７年）の第５４０−５４１頁に発表した「ＹＢａＣｕＯ
接合体中の７７度Ｋ以上におけるジョセフソン効果」に
おいてに記述されている。FIG. 5(a) shows a point contact method in which a Nb introducing conductor is formed sharply (0.1 mm in diameter) and is mechanically pressed onto a high temperature superconductor using a spring. , John Moreland et al. in Appl. phys. Lett. 51(7)(198
7), pp. 540-541, “YBaCuO
Josephson effect above 77 degrees K in zygotes.
【００１０】図５（ｂ）はエッジコンタクト（Ｅｄｇｅ
−ｃｏｎｔａｃｔ）であり、高温超伝導体を２つ割に切
断後、特殊な方法で切断面を押圧する方法であり、ジェ
ー、エス、トサイ（Ｊ．Ｓ．Ｔｓａｉ）等がＪａｐ．Ｊ
．Ａｐｐｌ．Ｐｈｙｓ．、２６（５）（１９８７年）の
第Ｌ７０１−７０３頁に発表した「９０度Ｋ以上におい
て動作する全セラミックジョセフソン接合体」において
記述されている。FIG. 5(b) shows an edge contact (Edge contact).
-contact) is a method in which a high-temperature superconductor is cut into two halves and then the cut surfaces are pressed using a special method, and J.S. Tsai et al. J
．． Appl. Phys. , 26(5) (1987), pp. L701-703, ``All-Ceramic Josephson Junction Operates Above 90 degrees K''.
【００１１】図５（ｃ）はサーフェイスコンタクトであ
り、２個の高温超伝導体をねじを利用して付着させる方
法であり、ワイ、ツアング（Ｙ．Ｚｈａｎｇ）等がＪａ
ｐ．Ｊ．Ａｐｐｌ．Ｐｈｙｓ．、５６（１６）（１６
Ａｐｒｉｌ １９９０年）の第１５７９−１５８１
頁の「１０１度Ｋ以上で動作するＢｉＰｂＳｒＣａＣｕ
Ｏｒｆ ＳＱＵＩＤ バルク」において記述されて
いる。FIG. 5(c) shows a surface contact, which is a method of attaching two high-temperature superconductors using screws, as described by Y. Zhang et al.
p. J. Appl. Phys. , 56(16)(16
April 1990) No. 1579-1581
"BiPbSrCaCu operating above 101 degrees K" on page
Orf SQUID Bulk”.
【００１２】図５（ｄ）はインジウムコンタクト（Ｉｎ
ｄｉｕｍ−ｃｏｎｔａｃｔ）であり、インジウムを高温
超伝導体に圧着させる方法であり、インジウムを軟かく
して酸化物超伝導体の内部に容易に浸透させるもので、
ジー、ブリセノ（Ｇ．Ｂｒｉｃｅｎｏ）等がＳｏｌｉｄ
Ｓｔａｔｅ Ｃｏｍｍ．，７０（１１）（１９８
９年）の第１０５５−１０５８頁の「Ｂｉ２Ｓｒ２Ｃａ
Ｃｕ２Ｏ８中のトンネル分光学（エネルギギャップは異
方性を有するか）」において記述されている。FIG. 5(d) shows an indium contact (In
dium-contact) is a method of pressing indium onto a high-temperature superconductor, which softens the indium and allows it to easily penetrate inside the oxide superconductor.
G. Briceno et al.
State Comm. , 70 (11) (198
9), pages 1055-1058, “Bi2Sr2Ca
"Tunnel spectroscopy in Cu2O8 (does the energy gap have anisotropy?)".
【００１３】図５（ｅ）はクラックコンタクト（Ｃｒａ
ｃｋ−ｃｏｎｔａｃｔ）であり、バルク（ｂｕｌｋ）の
高温超伝導体を２つ割に切断後、接触面積を小さくして
機械的に付着させる方法であり、エイ、ゼット、リン（
Ａ．Ｚ．Ｌｉｎ）等がＪａｐ．Ｊ．Ａｐｐｌ．Ｐｈｙｓ
．、２７（７）（Ｊｕｌｙ １９８８年）の第Ｌ１２
０４−１２０５頁の「７７度ＫにおけるＹ−Ｂａ−Ｃｕ
−Ｏ厚膜フィルムのジョセフソン接合体および直流ＳＱ
ＵＩＤ」において記述されている。FIG. 5(e) shows a crack contact (Cra
ck-contact) is a method in which a bulk high-temperature superconductor is cut in half and then mechanically attached by reducing the contact area.
A. Z. Lin) et al. Jap. J. Appl. Phys.
．． , 27(7) (July 1988) No. L12
"Y-Ba-Cu at 77 degrees K" on page 04-1205
-O Josephson junction of thick film and DC SQ
UID”.
【００１４】図５（ｆ）はブリッジコンタクトであり、
パターンニング法でブリッジをつくり、弱い結合を形成
させる方法で、現在最も広範に試されているものである
が、これはティー、エンドー（Ｔ．Ｅｎｄｏ）等がＥｌ
ｅｃｔｒｏｔｅｃｈ．Ｌａｂ．＜５１（９）（５ Ａ
ｕｇｕｓｔ １９８７年）の第６７１−６７９頁の「
ＹＢａＣｕＯセラミック超伝導体の弱いリンクにおける
交流ジョセフソン効果の観察」において記述されている
。FIG. 5(f) shows a bridge contact,
This method uses patterning to create bridges and form weak bonds, and is currently the most widely tested method.
electrotech. Lab. <51 (9) (5 A
August 1987), pp. 671-679, “
"Observations of AC Josephson Effects in Weak Links of YBaCuO Ceramic Superconductors".
【００１５】[0015]
【発明が解決しようとする課題】しかし、前記方法等は
前述の通り未だに試験段階であり、またこれらの大部分
の方法によっては４．２度Ｋで特性率が得られ、再現性
の確保が困難であるので均一な特性を有する接合率を得
ることが困難な実情である。[Problem to be solved by the invention] However, as mentioned above, the above methods are still in the testing stage, and most of these methods can obtain characteristic rates at 4.2 degrees K, making it difficult to ensure reproducibility. The actual situation is that it is difficult to obtain a bonding rate with uniform characteristics.
【００１６】本発明は前述の問題点を解決できるジョセ
フソン素子の提供を目的とするものであり、他の目的は
前記ジョセフソン素子の製造方法を提供することにある
。An object of the present invention is to provide a Josephson device that can solve the above-mentioned problems, and another object of the present invention is to provide a method for manufacturing the Josephson device.
【００１７】[0017]
【課題を解決するための手段】本発明ではセラミック高
温超伝導体が、一般に多数の粒界面（ｇｒａｉｎ ｂ
ｏｕｎｄａｒｙ）を有する多結晶である点を利用して、
物理的な圧力を加えると、粒子と粒子との間の粒界面が
粒子よりも大きくなるに伴って、前記粒界面がジョセフ
ソン接合作用をする事実に着眼してなされたものである
。SUMMARY OF THE INVENTION In the present invention, ceramic high temperature superconductors generally have a large number of grain interfaces (grain b
Taking advantage of the fact that it is a polycrystal with a
This was done based on the fact that when physical pressure is applied, the grain interface between particles becomes larger than the grain, and the grain interface acts as a Josephson junction.
【００１８】また、本発明によるジョセフソン素子はセ
ラミックを利用するものであるから、圧力を受けるとこ
われ易いので、前記圧力を加える前に通常の線材化方法
、例えばＡｇ管を利用して延伸し、こわれを防止して軟
性を与えるようにしている。更に説明すると、請求項１
に記載の本発明のジョセフソン素子は、Ｂｉ系高温超伝
導体となるジョセフソン素子において、Ｂｉ２Ｓｒ２Ｃ
ａ２Ｃｕ３の高温超伝導相とＢｉ２Ｓｒ２Ｃａ１Ｃｕ３
の低温超伝導相を除外した第２相が絶縁層の役割をする
ことを特徴とする。Furthermore, since the Josephson element according to the present invention uses ceramic, it is easily broken when subjected to pressure. Therefore, before applying the pressure, it is necessary to stretch it using a conventional wire forming method, for example, using an Ag tube. , to prevent breakage and provide flexibility. To explain further, claim 1
The Josephson device of the present invention described in
High temperature superconducting phase of a2Cu3 and Bi2Sr2Ca1Cu3
The second phase excluding the low-temperature superconducting phase serves as an insulating layer.
【００１９】請求項２に記載のジョセフソン素子は、前
記第２相が粒界面であり、裏面が絶縁層の役割をするこ
とを特徴とする。The Josephson element according to the second aspect is characterized in that the second phase is a grain boundary, and the back surface serves as an insulating layer.
【００２０】請求項３に記載のジョセフソン素子の製造
方法は、Ｂｉ系高温超伝導体となるジョセフソン素子の
製造方法において、Ｂｉ系高温超伝導体組成物を通常の
方法でか焼（Ｃａｌｃｉｎａｔｉｏｎ）、粉砕、成形お
よび焼結させることを特徴とする。The method for manufacturing a Josephson device according to claim 3 is a method for manufacturing a Josephson device that becomes a Bi-based high-temperature superconductor, in which a Bi-based high-temperature superconductor composition is calcined by a conventional method. ), characterized by being crushed, shaped and sintered.
【００２１】請求項４に記載のジョセフソン素子の製造
方法は、Ａｇ管を利用した線材化方法によって請求項２
に記載のジョセフソン素子を製造することを特徴とする
。[0021] The method of manufacturing a Josephson element according to claim 4 is a method of manufacturing a Josephson element according to claim 2, by a method of producing a wire rod using an Ag tube.
The present invention is characterized by manufacturing the Josephson device described in .
【００２２】請求項５に記載のジョセフソン素子の製造
方法は、Ｂｉ系超伝導組成物がＢｉ１．６Ｐｂ０．４Ｓ
ｒ２Ｃａ２Ｃｕ３Ｏｙであることを特徴とする。[0022] In the method for manufacturing a Josephson device according to claim 5, the Bi-based superconducting composition is Bi1.6Pb0.4S.
It is characterized by being r2Ca2Cu3Oy.
【００２３】[0023]
【作用】請求項１および２に記載の本発明のジョセフソ
ン素子は、再現性よく、しかも、優れた特性を示すもの
であり、応用範囲が極めて広く有用なものであり、また
請求項３から５に記載の本発明の製造方法は容易に高性
能なジョセフソン素子を製造可能とさせて、極めて有効
なものとである。[Function] The Josephson element of the present invention as set forth in claims 1 and 2 has good reproducibility and exhibits excellent characteristics, and is useful in an extremely wide range of applications. The manufacturing method of the present invention described in No. 5 makes it possible to easily manufacture a high-performance Josephson element and is extremely effective.
【００２４】[0024]
【実施例】以下、本発明の実施例を説明する。[Examples] Examples of the present invention will be described below.
【００２５】先ず、例えば、出発物質としてＢｉ２Ｏ３
、ＰｂＯ、ＳｒＣＯ３、ＣａＣＯ３、ＣｕＯをＢｉ１．
６Ｐｂ０．４Ｃａ２Ｃｕ３Ｏｙとなるように秤量して混
合し、８００℃で２０時間２回反復してか焼後、粉砕し
、空気中で焼結した後、焼結した材料を１μｍ以下に再
粉砕して、外径８ｍｍ、肉厚２ｍｍ、長さ３００ｍｍ、
のＡｇ管に入れ、外径４ｍｍとなるように延伸した後、
この延伸した線を８４５℃で８０時間焼結し、肉厚が０
．１から０．２ｍｍとなるように冷間圧延（常温下で）
した後、この冷間圧延した試片を８４５℃で５０時間焼
結して本発明のジョセフソン接合素子を製造する。First, for example, Bi2O3 is used as a starting material.
, PbO, SrCO3, CaCO3, CuO in Bi1.
6Pb0.4Ca2Cu3Oy was weighed and mixed, calcined twice for 20 hours at 800°C, crushed, sintered in air, and the sintered material was re-pulverized to 1 μm or less. , outer diameter 8mm, wall thickness 2mm, length 300mm,
After putting it into a Ag tube and stretching it to an outer diameter of 4 mm,
This stretched wire was sintered at 845°C for 80 hours to reduce the wall thickness to 0.
．． Cold rolled to a thickness of 1 to 0.2 mm (at room temperature)
Thereafter, the cold-rolled specimen was sintered at 845° C. for 50 hours to produce the Josephson junction element of the present invention.
【００２６】以上のように、ジョセフソン接合素子には
多数の粒界面が接合作用を行い、試片全体の特性はその
接合中に最も小さい臨界電流密度を有する接合により決
定されるのである。As described above, in the Josephson junction element, a large number of grain boundaries perform a bonding action, and the characteristics of the entire specimen are determined by the bond having the smallest critical current density during the bond.
【００２７】前述のようにして製造されたジョセフソン
素子の特性を図１および図２に示したが、図１は製造さ
れたジョセフソン素子の温度の変化に伴なう抵抗の変化
を示し、８７度Ｋで抵抗は０となり、図２は接合のＤＣ
ジョセフソン効果を測定したもので、前述の図面に示さ
れたように、本発明による接合は、確実にジョセフソン
効果を示していることが認められる。また、図３は本発
明のジョセフソン接合素子の走査電子顕微鏡写真であり
、黒い線で示されたものは前記第２相を表わしている。The characteristics of the Josephson element manufactured as described above are shown in FIGS. 1 and 2, and FIG. 1 shows the change in resistance of the manufactured Josephson element as the temperature changes. At 87 degrees K, the resistance becomes 0, and Figure 2 shows the DC of the junction.
The Josephson effect was measured, and as shown in the above-mentioned drawings, it was found that the bond according to the present invention definitely exhibits the Josephson effect. Further, FIG. 3 is a scanning electron micrograph of the Josephson junction element of the present invention, and the black line represents the second phase.
【００２８】本発明の製造方法は工程が複雑でなく、既
存の方法よりずっと大きくすることができるので、その
応用分野も相当に広いものである。The manufacturing method of the present invention is not complicated and can be made much larger than existing methods, so its application field is quite wide.
【００２９】なお、本発明は前記実施例に限定されるも
のではなく、必要に応じて変更することができる。It should be noted that the present invention is not limited to the above embodiments, and can be modified as necessary.
【００３０】[0030]
【発明の効果】このように本発明のジョセフソン素子は
、再現性よく、しかも、優れた特性を示すものであり、
応用範囲が極めて広く有用なものであり、また本発明の
製造方法は容易に高性能なジョセフソン素子を製造可能
とさせて、極めて有効なものとなる等の効果を奏する。[Effects of the Invention] As described above, the Josephson element of the present invention has good reproducibility and exhibits excellent characteristics.
The present invention has an extremely wide range of applications and is useful, and the manufacturing method of the present invention has effects such as being able to easily manufacture high-performance Josephson elements and being extremely effective.
【図１】本発明のジョセフソン素子の一実施例の温度−
抵抗特性図FIG. 1: Temperature of one embodiment of the Josephson element of the present invention.
Resistance characteristic diagram
【図２】本発明のジョセフソン素子の一実施例の電圧−
電流特性図[Fig. 2] Voltage of one embodiment of the Josephson element of the present invention -
Current characteristic diagram
【図３】本発明のジョセフソン素子の金属組織の走査電
子顕微鏡によるＸ線写真（×２０，０００）[Fig. 3] X-ray photograph (×20,000) of the metal structure of the Josephson element of the present invention taken by a scanning electron microscope.
【図４】従
前の低温超伝導体を利用したジョセフソン素子の断面図[Figure 4] Cross-sectional view of a Josephson device using a conventional low-temperature superconductor
Claims (5)
ン素子において、Ｂｉ２Ｓｒ２Ｃａ２Ｃｕ３の高温超伝
導相とＢｉ２Ｓｒ２Ｃａ１Ｃｕ３の低温超伝導相を除外
した第２相が絶縁層の役割をすることを特徴とするジョ
セフソン素子。1. A Josephson element that is a Bi-based high-temperature superconductor, in which a second phase excluding the high-temperature superconducting phase of Bi2Sr2Ca2Cu3 and the low-temperature superconducting phase of Bi2Sr2Ca1Cu3 serves as an insulating layer. Song Motoko.
縁層の役割をすることを特徴とする請求項１に記載のジ
ョセフソン素子。2. The Josephson device according to claim 1, wherein the second phase is a grain boundary, and the back surface serves as an insulating layer.
ン素子の製造方法において、Ｂｉ系高温超伝導体組成物
を通常の方法でか焼、粉砕、成形および燃結させること
を特徴とするジョセフソン素子の製造方法。3. A method for manufacturing a Josephson element that is a Bi-based high-temperature superconductor, comprising: calcination, pulverization, molding, and sintering of a Bi-based high-temperature superconductor composition in a conventional manner. Method of manufacturing a son element.
請求項２に記載のジョセフソン素子を製造することを特
徴とするジョセフソン素子の製造方法。4. A method for manufacturing a Josephson device, comprising manufacturing the Josephson device according to claim 2 by a wire forming method using an Ag tube.
０．４Ｓｒ２Ｃａ２Ｃｕ３Ｏｙであることを特徴とする
請求項２に記載のジョセフソン素子の製造方法。[Claim 5] The Bi-based superconducting introduction product is Bi1.6Pb.
3. The method of manufacturing a Josephson device according to claim 2, wherein the material is 0.4Sr2Ca2Cu3Oy.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1990P4770 | 1990-04-07 | ||
| KR1019900004770A KR910019273A (en) | 1990-04-07 | 1990-04-07 | Josephson device and its manufacturing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04226088A true JPH04226088A (en) | 1992-08-14 |
Family
ID=19297765
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3125632A Pending JPH04226088A (en) | 1990-04-07 | 1991-03-07 | Josephson element and its manufacture |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPH04226088A (en) |
| KR (1) | KR910019273A (en) |
| DE (1) | DE4022309A1 (en) |
| FR (1) | FR2660800A1 (en) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE68923325T2 (en) * | 1988-05-11 | 1995-11-23 | Canon Kk | Josephson facility. |
| JP2790494B2 (en) * | 1989-10-13 | 1998-08-27 | 松下電器産業株式会社 | Superconducting element |
-
1990
- 1990-04-07 KR KR1019900004770A patent/KR910019273A/en not_active Application Discontinuation
- 1990-07-13 DE DE4022309A patent/DE4022309A1/en not_active Withdrawn
- 1990-08-13 FR FR9010295A patent/FR2660800A1/en not_active Withdrawn
-
1991
- 1991-03-07 JP JP3125632A patent/JPH04226088A/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| FR2660800A1 (en) | 1991-10-11 |
| KR910019273A (en) | 1991-11-30 |
| DE4022309A1 (en) | 1991-10-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR910007901B1 (en) | Super conductor device | |
| JPH03153089A (en) | Tunnel junction element wherein compound oxide superconductive material is used | |
| JPH04226088A (en) | Josephson element and its manufacture | |
| JPH02207420A (en) | Manufacture of superconducting wire rod | |
| JPH02391A (en) | Superconductive field-effect transistor | |
| JPH0272685A (en) | Method for forming weakly coupled superconductor part | |
| EP0494830A2 (en) | Method for manufacturing tunnel junction type josephson device composed of compound oxide superconductor material | |
| JP2773503B2 (en) | Superconducting field effect element and method for producing the same | |
| JP2647251B2 (en) | Superconducting element and fabrication method | |
| JP2763075B2 (en) | Oxide superconductor | |
| JPH01137682A (en) | Superconducting switching element | |
| JP3590567B2 (en) | Manufacturing method of oxide superconducting wire and oxide superconducting wire | |
| JP3313907B2 (en) | Bi-based superconducting material, Bi-based superconducting wire having the same, and method of manufacturing the superconducting wire | |
| JP3313908B2 (en) | Bi-based superconducting material, Bi-based superconducting wire having the same, and method of manufacturing the superconducting wire | |
| Torsoni et al. | IV characteristic behavior of BSCCO-2223 superconductor under low intensity DC magnetic fields a Home-Made Experiment | |
| JP2862706B2 (en) | Superconducting element | |
| JPH04224114A (en) | Production of thick film of oxide superconductor | |
| JP4092393B2 (en) | High temperature superconducting Josephson junction forming method and high temperature superconducting Josephson device comprising Josephson junction formed thereby | |
| JPH04368185A (en) | Tunnel junction element | |
| JPH02264486A (en) | Superconductive film weakly coupled element | |
| JPH02186681A (en) | Superconductive junction device | |
| JPH01137683A (en) | Superconducting switching element | |
| JPH04292814A (en) | Manufacture of bismuth-based oxide superconductive wire | |
| JPH04288885A (en) | Tunnel-type josephson element | |
| JPH03295282A (en) | Superconducting element |