JPH0422606B2 - - Google Patents
Info
- Publication number
- JPH0422606B2 JPH0422606B2 JP1278034A JP27803489A JPH0422606B2 JP H0422606 B2 JPH0422606 B2 JP H0422606B2 JP 1278034 A JP1278034 A JP 1278034A JP 27803489 A JP27803489 A JP 27803489A JP H0422606 B2 JPH0422606 B2 JP H0422606B2
- Authority
- JP
- Japan
- Prior art keywords
- waste gas
- treatment
- hydride
- volatile
- liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000002912 waste gas Substances 0.000 claims description 48
- 239000007788 liquid Substances 0.000 claims description 23
- 150000004678 hydrides Chemical class 0.000 claims description 11
- 239000000428 dust Substances 0.000 claims description 10
- 230000005587 bubbling Effects 0.000 claims description 6
- 239000000346 nonvolatile oil Substances 0.000 claims description 5
- 238000002203 pretreatment Methods 0.000 claims description 5
- 150000007524 organic acids Chemical class 0.000 claims description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 3
- 150000007522 mineralic acids Chemical class 0.000 claims description 3
- 229910000077 silane Inorganic materials 0.000 claims description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 12
- 239000003795 chemical substances by application Substances 0.000 description 7
- 239000002253 acid Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000010419 fine particle Substances 0.000 description 4
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 235000019353 potassium silicate Nutrition 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000010687 lubricating oil Substances 0.000 description 1
- 239000012286 potassium permanganate Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
Description
【発明の詳細な説明】
≪産業上の利用分野≫
本発明は、例えば半導体製造過程からのシラン
等の水素化物系廃ガスの処理装置に関する。DETAILED DESCRIPTION OF THE INVENTION <<Industrial Application Field>> The present invention relates to an apparatus for treating hydride-based waste gases such as silane from, for example, semiconductor manufacturing processes.
≪従来技術≫
水素化物系の廃ガスは、有毒であつたり、発火
性が強かつたりすることから、処理塔で無害化し
てから放出されるのであるが、半導体製造過程か
らの廃ガス中には、ケイ素、二酸化ケイ素、一酸
化ケイ素等の微粒子が混入しており、この微粒子
が直接処理塔に入り込むと、圧損の増大、閉塞等
により、処理塔での処理能力に影響を与える。<<Prior art>> Hydride-based waste gas is toxic and highly flammable, so it is made harmless in a treatment tower before being released. is contaminated with fine particles such as silicon, silicon dioxide, and silicon monoxide, and if these fine particles directly enter the treatment tower, they will affect the treatment capacity of the treatment tower due to increased pressure loss, blockage, etc.
このため、従来では、処理塔に廃ガスを供給す
る廃ガス供給路に水酸化ナトリウム溶液を貯溜し
た前処理槽を配置し、廃ガスを水酸化ナトリウム
溶液中でバブリングすることにより、廃ガス中か
ら微粒子を除去し、微粒子を含まない状態での廃
ガスを処理塔に送り込むようにしていた。 For this reason, in the past, a pretreatment tank storing a sodium hydroxide solution was placed in the waste gas supply line that supplies waste gas to the treatment tower, and the waste gas was bubbled in the sodium hydroxide solution. Particulates were removed from the waste gas, and the waste gas, which did not contain any particulates, was sent to the treatment tower.
≪解決しようとする課題≫
ところが、半導体製造過程からの廃ガスを水酸
化ナトリウム溶液中でバブリングさせると、前処
理槽から導出される廃ガスが過度に加湿されるこ
とになり、加湿された廃ガスが処理塔に流入する
と、処理塔内に充填されている処理剤の表面を水
ガラスでコーテイングすることになり、処理剤の
寿命が短くなるという問題があつた。≪Problem to be solved≫ However, when waste gas from the semiconductor manufacturing process is bubbled in a sodium hydroxide solution, the waste gas discharged from the pretreatment tank becomes excessively humidified. When the gas flows into the treatment tower, the surface of the treatment agent filled in the treatment tower is coated with water glass, resulting in a problem that the life of the treatment agent is shortened.
本発明はこのような点に着目してなされたもの
で、廃ガスから微粒子を除去しながらも、廃ガス
を加湿しない前処理を行なえる処理装置を提供す
ることを目的とする。 The present invention has been made with attention to such points, and an object of the present invention is to provide a processing device that can perform pretreatment without humidifying the waste gas while removing particulates from the waste gas.
≪課題を解決するための手段≫
上記目的を達成するために本発明は、処理塔へ
廃ガスを供給する廃ガス供給路に配置した前処理
槽に硫酸等の不揮発性無機酸液、不揮発性有機酸
液、あるいは不揮発性油からなる除塵液を貯溜
し、廃ガスを不揮発性液内でバブリングすること
により、廃ガス中に含まれている微粒子を除去す
るように構成したことを特徴としている。≪Means for Solving the Problems≫ In order to achieve the above object, the present invention provides a pretreatment tank disposed in a waste gas supply path that supplies waste gas to a treatment tower, a non-volatile inorganic acid liquid such as sulfuric acid, a non-volatile It is characterized by a structure in which a dust removal liquid made of an organic acid liquid or a non-volatile oil is stored, and the particulates contained in the waste gas are removed by bubbling the waste gas within the non-volatile liquid. .
≪作用≫
処理塔へ廃ガスを供給する廃ガス供給路に配置
した前処理槽に不揮発性酸液あるいは不揮発性油
を貯溜し、廃ガスを不揮発性液体内でバブリング
することにより、廃ガス中に含まれている微粒子
を除去するように構成しているので、廃ガス中に
含まれていた微粒子が不揮発性液体内で除去さ
れ、しかも、前処理槽から導出された廃ガスは過
度に加湿されることがなくなる。≪Operation≫ A non-volatile acid liquid or non-volatile oil is stored in a pre-treatment tank placed in the waste gas supply path that supplies waste gas to the treatment tower, and by bubbling the waste gas in the non-volatile liquid, Since the structure is configured to remove particulates contained in the waste gas, the particulates contained in the waste gas are removed within the nonvolatile liquid, and the waste gas discharged from the pretreatment tank is not excessively humidified. You will no longer be exposed to it.
≪実施例≫
図面は水素化物系廃ガスの処理系を示す流れ図
である。<<Example>> The drawing is a flowchart showing a treatment system for hydride-based waste gas.
図中符号１は半導体製造装置等の水素化物系廃
ガス供給源であり、この水素化物系廃ガス供給源
１は廃ガス供給路２で処理塔３に連通している。
処理塔３内にはアルミナ等の固形担体に水酸化ナ
トリウムと過マンガン酸カリウムとを含浸させて
なる処理剤４が充填してある。 Reference numeral 1 in the figure is a hydride waste gas supply source from semiconductor manufacturing equipment, etc., and this hydride waste gas supply source 1 is connected to a processing tower 3 through a waste gas supply path 2.
The treatment tower 3 is filled with a treatment agent 4 made of a solid carrier such as alumina impregnated with sodium hydroxide and potassium permanganate.
水素化物系廃ガス供給源１と処理塔３との間の
廃ガス供給路２に前処理槽５が配置してある。こ
の前処理槽５には濃硫酸やリン酸に代表される不
揮発性強酸液からなる除塵液６が貯溜してあり、
廃ガスはこの除塵液６内に吹き込まれてバブリン
グするようにしてある。そして、このバブリング
中に廃ガスに含まれているケイ素、二酸化ケイ素
一酸化ケイ素等の微粒子が除塵液６で除去される
ことになるから、微粒子が処理塔３内に流入する
ことがなくなるうえ、除塵液６に不揮発性強酸を
使用しているから、この除塵液成分が処理塔３に
流れ込むことがなく、処理塔３内の処理剤４に影
響を与えることがない。また、不揮発性強酸液は
脱水作用が大きいから、処理塔３に流入する廃ガ
スは乾燥状態になつており、処理剤４の表面に水
ガラスが付着することがなくなる。 A pretreatment tank 5 is arranged in the waste gas supply path 2 between the hydride waste gas supply source 1 and the treatment tower 3 . This pre-treatment tank 5 stores a dust removal liquid 6 made of a non-volatile strong acid solution such as concentrated sulfuric acid or phosphoric acid.
The waste gas is blown into this dust removal liquid 6 to cause bubbling. During this bubbling, fine particles such as silicon, silicon dioxide, silicon monoxide, etc. contained in the waste gas are removed by the dust removal liquid 6, so that fine particles will not flow into the treatment tower 3, and Since a non-volatile strong acid is used in the dust removal liquid 6, the components of the dust removal liquid do not flow into the treatment tower 3 and do not affect the treatment agent 4 in the treatment tower 3. Furthermore, since the nonvolatile strong acid liquid has a strong dehydration effect, the waste gas flowing into the treatment tower 3 is in a dry state, and water glass does not adhere to the surface of the treatment agent 4.
なお、上記実施例では前処理槽５に貯溜する除
塵液６を不揮発性酸液で形成しているが、除塵液
６を真空ポンプ用潤滑油（例えばフオンブリン
グ）等の不揮発性油で構成するようにしてもよ
い。 In the above embodiment, the dust removal liquid 6 stored in the pretreatment tank 5 is made of a nonvolatile acid solution, but the dust removal liquid 6 may be made of a nonvolatile oil such as a lubricating oil for a vacuum pump (for example, Fonbling). You can do it like this.
≪効果≫
処理塔へ廃ガスを供給する廃ガス供給路に配置
した前処理槽に不揮発性無機酸液、不揮発性有機
酸液あるいは不揮発性油を貯溜し、廃ガスを不揮
発性液体内でバブリングすることにより、廃ガス
中に含まれている微粒子を除去するように構成し
ているので、廃ガス中に含まれていた微粒子が不
揮発性液体内で除去され、しかも、前処理槽から
導出された廃ガスは過度に加湿されることがなく
なるから、処理塔内で処理剤の表面を水ガラスで
コーテイングすることがなくなり、処理剤の性能
を十分発揮させることができる。≪Effect≫ A nonvolatile inorganic acid liquid, a nonvolatile organic acid liquid, or a nonvolatile oil is stored in a pretreatment tank placed in the waste gas supply path that supplies waste gas to the treatment tower, and the waste gas is bubbled within the nonvolatile liquid. By doing this, the particulates contained in the waste gas are removed, so the particulates contained in the waste gas are removed within the nonvolatile liquid, and moreover, they are removed from the pretreatment tank. Since the waste gas is not excessively humidified, the surface of the processing agent is not coated with water glass in the processing tower, and the performance of the processing agent can be fully demonstrated.
図面は水素化物系廃ガスの処理系を示す流れ図
である。
３……処理塔(3)、２……廃ガス供給路、５……
前処理槽、６……除塵液。
The drawing is a flowchart showing a treatment system for hydride-based waste gas. 3...Treatment tower (3), 2...Waste gas supply line, 5...
Pre-treatment tank, 6...dust removal liquid.
Claims (1)
内する廃ガス供給路２に前処理槽５を配置し、こ
の前処理槽５に除塵液６として不揮発性無機また
は有機酸液を貯溜し、廃ガスを不揮発性無機また
は有機酸液内でバブリングすることにより、廃ガ
ス中に含まれている微粒子を除去するように構成
したことを特徴とする水素化物系廃ガスの乾式処
理装置。 ２ シラン等の水素化物系廃ガスを処理塔３に案
内する廃ガス供給路２に前処理槽５を配置し、こ
の前処理槽５に除塵液６として不揮発性油を貯溜
し、廃ガスを不揮発性油圧でバブリングすること
により、廃ガス中に含まれている微粒子を除去す
るように構成したことを特徴とする水素化物系廃
ガスの乾式処理装置。[Claims] 1. A pretreatment tank 5 is disposed in the waste gas supply path 2 that guides hydride-based waste gas such as silane to the treatment tower 3, and a non-volatile inorganic or A hydride-based waste gas characterized by being configured to remove particulates contained in the waste gas by storing an organic acid liquid and bubbling the waste gas within the nonvolatile inorganic or organic acid liquid. dry processing equipment. 2. A pre-treatment tank 5 is arranged in the waste gas supply path 2 that guides hydride-based waste gas such as silane to the treatment tower 3, and a non-volatile oil is stored in the pre-treatment tank 5 as a dust removal liquid 6 to remove the waste gas. A dry treatment device for hydride waste gas, characterized in that it is configured to remove particulates contained in the waste gas by bubbling with non-volatile hydraulic pressure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1278034A JPH03137916A (en) | 1989-10-24 | 1989-10-24 | Apparatus for dry treatment of hydride type waste gas |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1278034A JPH03137916A (en) | 1989-10-24 | 1989-10-24 | Apparatus for dry treatment of hydride type waste gas |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03137916A JPH03137916A (en) | 1991-06-12 |
| JPH0422606B2 true JPH0422606B2 (en) | 1992-04-20 |
Family
ID=17591729
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1278034A Granted JPH03137916A (en) | 1989-10-24 | 1989-10-24 | Apparatus for dry treatment of hydride type waste gas |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03137916A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB9614848D0 (en) * | 1996-07-15 | 1996-09-04 | Boc Group Plc | Processes for the scrubbing of noxious substances |
| DE19854235A1 (en) * | 1998-11-24 | 2000-05-25 | Wacker Siltronic Halbleitermat | Continuous combustible metallurgical dust passivation, especially in Czochralski silicon single crystal growth units, comprises controlled dust oxidation in off-gas stream |
-
1989
- 1989-10-24 JP JP1278034A patent/JPH03137916A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH03137916A (en) | 1991-06-12 |
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