JPH04222940A - Optical information recording medium and its production - Google Patents
Optical information recording medium and its productionInfo
- Publication number
- JPH04222940A JPH04222940A JP40703790A JP40703790A JPH04222940A JP H04222940 A JPH04222940 A JP H04222940A JP 40703790 A JP40703790 A JP 40703790A JP 40703790 A JP40703790 A JP 40703790A JP H04222940 A JPH04222940 A JP H04222940A
- Authority
- JP
- Japan
- Prior art keywords
- film
- moisture
- optical information
- information recording
- recording medium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 34
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 43
- 239000004033 plastic Substances 0.000 claims abstract description 20
- 229920003023 plastic Polymers 0.000 claims abstract description 20
- 238000004544 sputter deposition Methods 0.000 claims abstract description 18
- 230000003247 decreasing effect Effects 0.000 claims abstract 2
- 238000006116 polymerization reaction Methods 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 7
- 239000002994 raw material Substances 0.000 claims description 7
- 239000000696 magnetic material Substances 0.000 claims description 4
- 239000000203 mixture Substances 0.000 abstract description 9
- 239000000463 material Substances 0.000 abstract description 7
- 238000010521 absorption reaction Methods 0.000 abstract description 4
- 230000007774 longterm Effects 0.000 abstract description 4
- 230000003449 preventive effect Effects 0.000 abstract 3
- 229920000642 polymer Polymers 0.000 abstract 1
- 239000010408 film Substances 0.000 description 95
- 239000010410 layer Substances 0.000 description 40
- 230000000052 comparative effect Effects 0.000 description 9
- 239000011241 protective layer Substances 0.000 description 8
- 239000011347 resin Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 230000006866 deterioration Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 239000000178 monomer Substances 0.000 description 3
- 150000002894 organic compounds Chemical class 0.000 description 3
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 2
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical class FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910005091 Si3N Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- 238000000862 absorption spectrum Methods 0.000 description 2
- KDKYADYSIPSCCQ-UHFFFAOYSA-N but-1-yne Chemical compound CCC#C KDKYADYSIPSCCQ-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- RWRIWBAIICGTTQ-UHFFFAOYSA-N difluoromethane Chemical class FCF RWRIWBAIICGTTQ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 description 2
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- -1 propylene, tetrafluoroethylene, monofluoromethane Chemical class 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- LVGUZGTVOIAKKC-UHFFFAOYSA-N 1,1,1,2-tetrafluoroethane Chemical class FCC(F)(F)F LVGUZGTVOIAKKC-UHFFFAOYSA-N 0.000 description 1
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- OEPOKWHJYJXUGD-UHFFFAOYSA-N 2-(3-phenylmethoxyphenyl)-1,3-thiazole-4-carbaldehyde Chemical compound O=CC1=CSC(C=2C=C(OCC=3C=CC=CC=3)C=CC=2)=N1 OEPOKWHJYJXUGD-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- PRNZBCYBKGCOFI-UHFFFAOYSA-N 2-fluoropropane Chemical class CC(C)F PRNZBCYBKGCOFI-UHFFFAOYSA-N 0.000 description 1
- OUVJBYLCMMJCIJ-UHFFFAOYSA-N 3,3-diphenylprop-1-enylsilane Chemical compound C1(=CC=CC=C1)C(C1=CC=CC=C1)C=C[SiH3] OUVJBYLCMMJCIJ-UHFFFAOYSA-N 0.000 description 1
- XSSBJTGLJOGGGP-UHFFFAOYSA-N 6-butyldec-5-en-5-ylsilane Chemical compound CCCCC([SiH3])=C(CCCC)CCCC XSSBJTGLJOGGGP-UHFFFAOYSA-N 0.000 description 1
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- NOZAQBYNLKNDRT-UHFFFAOYSA-N [diacetyloxy(ethenyl)silyl] acetate Chemical compound CC(=O)O[Si](OC(C)=O)(OC(C)=O)C=C NOZAQBYNLKNDRT-UHFFFAOYSA-N 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000001273 butane Substances 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- ZZNQQQWFKKTOSD-UHFFFAOYSA-N diethoxy(diphenyl)silane Chemical compound C=1C=CC=CC=1[Si](OCC)(OCC)C1=CC=CC=C1 ZZNQQQWFKKTOSD-UHFFFAOYSA-N 0.000 description 1
- CTCMZLFWDKHYMJ-UHFFFAOYSA-N diethyl(diphenyl)silane Chemical compound C=1C=CC=CC=1[Si](CC)(CC)C1=CC=CC=C1 CTCMZLFWDKHYMJ-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- AHUXYBVKTIBBJW-UHFFFAOYSA-N dimethoxy(diphenyl)silane Chemical compound C=1C=CC=CC=1[Si](OC)(OC)C1=CC=CC=C1 AHUXYBVKTIBBJW-UHFFFAOYSA-N 0.000 description 1
- OIKHZBFJHONJJB-UHFFFAOYSA-N dimethyl(phenyl)silicon Chemical compound C[Si](C)C1=CC=CC=C1 OIKHZBFJHONJJB-UHFFFAOYSA-N 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- FWDBOZPQNFPOLF-UHFFFAOYSA-N ethenyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C=C FWDBOZPQNFPOLF-UHFFFAOYSA-N 0.000 description 1
- JEWCZPTVOYXPGG-UHFFFAOYSA-N ethenyl-ethoxy-dimethylsilane Chemical compound CCO[Si](C)(C)C=C JEWCZPTVOYXPGG-UHFFFAOYSA-N 0.000 description 1
- ADLWTVQIBZEAGJ-UHFFFAOYSA-N ethoxy-methyl-diphenylsilane Chemical compound C=1C=CC=CC=1[Si](C)(OCC)C1=CC=CC=C1 ADLWTVQIBZEAGJ-UHFFFAOYSA-N 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- BFXIKLCIZHOAAZ-UHFFFAOYSA-N methyltrimethoxysilane Chemical compound CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 description 1
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 1
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 1
- MSRJTTSHWYDFIU-UHFFFAOYSA-N octyltriethoxysilane Chemical compound CCCCCCCC[Si](OCC)(OCC)OCC MSRJTTSHWYDFIU-UHFFFAOYSA-N 0.000 description 1
- 229960003493 octyltriethoxysilane Drugs 0.000 description 1
- 239000005304 optical glass Substances 0.000 description 1
- 150000003961 organosilicon compounds Chemical class 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920002492 poly(sulfone) Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- MWWATHDPGQKSAR-UHFFFAOYSA-N propyne Chemical compound CC#C MWWATHDPGQKSAR-UHFFFAOYSA-N 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- UQMOLLPKNHFRAC-UHFFFAOYSA-N tetrabutyl silicate Chemical compound CCCCO[Si](OCCCC)(OCCCC)OCCCC UQMOLLPKNHFRAC-UHFFFAOYSA-N 0.000 description 1
- REWDXIKKFOQRID-UHFFFAOYSA-N tetrabutylsilane Chemical compound CCCC[Si](CCCC)(CCCC)CCCC REWDXIKKFOQRID-UHFFFAOYSA-N 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical class FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- UFHILTCGAOPTOV-UHFFFAOYSA-N tetrakis(ethenyl)silane Chemical compound C=C[Si](C=C)(C=C)C=C UFHILTCGAOPTOV-UHFFFAOYSA-N 0.000 description 1
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- GQIUQDDJKHLHTB-UHFFFAOYSA-N trichloro(ethenyl)silane Chemical compound Cl[Si](Cl)(Cl)C=C GQIUQDDJKHLHTB-UHFFFAOYSA-N 0.000 description 1
- WILBTFWIBAOWLN-UHFFFAOYSA-N triethyl(triethylsilyloxy)silane Chemical compound CC[Si](CC)(CC)O[Si](CC)(CC)CC WILBTFWIBAOWLN-UHFFFAOYSA-N 0.000 description 1
- KHQZLUVCZCAMFU-UHFFFAOYSA-N tripropyl(tripropylsilyloxy)silane Chemical compound CCC[Si](CCC)(CCC)O[Si](CCC)(CCC)CCC KHQZLUVCZCAMFU-UHFFFAOYSA-N 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 239000005050 vinyl trichlorosilane Substances 0.000 description 1
Abstract
Description
【0001】0001
【産業上の利用分野】本発明は光情報記録媒体及びその
製造方法に係る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical information recording medium and a method for manufacturing the same.
【0002】0002
【従来の技術】基板がプラスチックである光情報記録媒
体の場合、基板の吸湿に起因する光情報記録媒体の変形
ひいては磁気特性の劣化が問題となる。2. Description of the Related Art In the case of an optical information recording medium whose substrate is made of plastic, deformation of the optical information recording medium and deterioration of magnetic properties due to moisture absorption of the substrate becomes a problem.
【0003】そこで、基板の記録層を、例えばSi3N
4等からなる保護膜ではさみこんで、防湿を行ったり、
さらには、記録層とは反対側の面に不透湿性の無機膜を
形成することにより吸湿量を基板両面で均一にして反り
等を防止したりすることが試みられている(例えば特開
昭58−32238号公報)。Therefore, the recording layer of the substrate is made of, for example, Si3N.
Sandwiched with a protective film consisting of 4 components to prevent moisture,
Furthermore, attempts have been made to form a moisture-impermeable inorganic film on the surface opposite to the recording layer to make the amount of moisture absorbed uniform on both sides of the substrate and prevent warping. 58-32238).
【0004】しかし、この試みにおいては、短期的な防
湿効果は見られるが、高温高湿下に長期間放置すると、
無機膜と記録層との端面から水分が浸入して、無機膜の
剥離が生じる。さらに、無機膜に存在する応力や、無機
膜と他の層との熱膨張率の差に起因して無機膜の剥離が
生じたり、無機膜にクラック等が発生してしまう。従っ
て、長期的にみるとこの技術も光情報記録媒体の変形ひ
いては磁気特性の劣化という問題に対する解決とはなっ
ていない。However, although a short-term moisture-proofing effect was observed in this attempt, if left for a long period of time under high temperature and high humidity,
Moisture enters from the end faces of the inorganic film and the recording layer, causing peeling of the inorganic film. Furthermore, due to the stress existing in the inorganic film and the difference in coefficient of thermal expansion between the inorganic film and other layers, the inorganic film may peel off or cracks may occur in the inorganic film. Therefore, in the long term, this technology does not solve the problem of deformation of optical information recording media and deterioration of magnetic properties.
【0005】[0005]
【発明が解決しようとする課題】本発明は、防湿膜の密
着性が良好であり、吸湿による基板の変形をおさえた長
期的な信頼性の高い光情報記録媒体およびその製造方法
を提供することを目的とする。SUMMARY OF THE INVENTION An object of the present invention is to provide an optical information recording medium that has good adhesion of a moisture-proof film and has high long-term reliability in which deformation of the substrate due to moisture absorption is suppressed, and a method for manufacturing the same. With the goal.
【0006】[0006]
【課題を解決するための手段】上記課題を解決するため
の本発明の第1の要旨は、プラスチック基板上に非晶質
磁性体からなる記録層を有する光情報記録媒体において
、該記録層が形成されている面とは反対側の基板面に、
プラズマ重合膜と、スパッタ膜とからなる防湿膜を有す
ることを特徴とする光情報記録媒体に存在する。[Means for Solving the Problems] A first aspect of the present invention for solving the above problems is an optical information recording medium having a recording layer made of an amorphous magnetic material on a plastic substrate, in which the recording layer is On the side of the substrate opposite to the side where it is formed,
An optical information recording medium characterized by having a moisture-proof film made of a plasma polymerized film and a sputtered film.
【0007】さらに本発明の第2の要旨は、プラスチッ
ク基板が配置された成膜室に、プラズマ重合用の原料を
供給して放電を開始し、次いで、プラズマ重合用の原料
の供給量を徐々に減少させるとともにスパッタ用のガス
の供給を開始し、最終的にスパッタ用のガスのみを供給
してプラズマ重合膜とスパッタ膜とからなる防湿膜をプ
ラスチック基板上の記録層が形成される面とは反対側の
面に形成することを特徴とする光情報記録媒体の製造方
法に存在する。Furthermore, the second gist of the present invention is to supply a raw material for plasma polymerization to a film forming chamber in which a plastic substrate is placed, to start electric discharge, and then to gradually reduce the amount of raw material supplied for plasma polymerization. At the same time, supply of sputtering gas is started, and finally only sputtering gas is supplied to coat the surface of the plastic substrate where the recording layer will be formed with a moisture-proof film consisting of a plasma polymerized film and a sputtered film. exists in a method of manufacturing an optical information recording medium characterized in that the method is formed on the opposite surface.
【0008】以下本発明の実施態様例を構成要件別に詳
細に説明する。Embodiments of the present invention will be explained in detail below by component.
【0009】(層構造)本発明においては、プラスチッ
ク基板上に記録層を有し、記録層が形成されている面と
は反対側の基板面に防湿膜を有している。(Layer structure) In the present invention, a recording layer is provided on a plastic substrate, and a moisture-proof film is provided on the surface of the substrate opposite to the surface on which the recording layer is formed.
【0010】ただ、図1に示すように、プラスチック基
板10と記録層12との間に誘電体層11を介在せしめ
てもよく、また、防湿性等をより高めるために、記録層
12上に、保護層13、さらに保護層13の上に、紫外
線硬化樹脂層15を形成してもよい。また、例えばAl
等による反射層を加えた層構造としてもよい。However, as shown in FIG. 1, a dielectric layer 11 may be interposed between the plastic substrate 10 and the recording layer 12, and a dielectric layer 11 may be interposed between the plastic substrate 10 and the recording layer 12. , the protective layer 13, and further on the protective layer 13, an ultraviolet curing resin layer 15 may be formed. Also, for example, Al
It is also possible to have a layered structure in which a reflective layer is added.
【0011】この場合、誘電体層11、保護層13の材
質としては、例えば、Si,Al,Mg,Ca,Ti,
Zr,Zn等の化合物(例えば、窒化物、酸化物)を用
いることができる。なお、誘電体層の厚みは、50〜3
00nmが好ましく、保護層の厚みは、50〜300n
mが好ましい。In this case, the materials of the dielectric layer 11 and the protective layer 13 include, for example, Si, Al, Mg, Ca, Ti,
Compounds (eg, nitrides, oxides) of Zr, Zn, etc. can be used. Note that the thickness of the dielectric layer is 50 to 3
00 nm is preferable, and the thickness of the protective layer is 50 to 300 nm.
m is preferred.
【0012】(基板)本発明における基板10は、プラ
スチックよりなる基板であり、プラスチックは透光性を
有するものであれば特に限定されず、例えば、ポリカー
ボネート、ポリメチルメタクリレート、ポリサルフォン
、非晶質ポリオレフィン、エポキシ樹脂等が好適に用い
られる。(Substrate) The substrate 10 in the present invention is a substrate made of plastic, and the plastic is not particularly limited as long as it has translucency, and examples thereof include polycarbonate, polymethyl methacrylate, polysulfone, and amorphous polyolefin. , epoxy resin, etc. are preferably used.
【0013】(記録層)本発明における記録層12は、
非晶質磁性体からなる。非晶質磁性体の材料としては、
例えば、GaFe,TbFe,TbCo,TbFeCo
,GdTbFe,TbDyFe,GdFe,GdCo,
GdFeCo,TbFeO3,GdIG等が好適に用い
られる。(Recording layer) The recording layer 12 in the present invention is:
Made of amorphous magnetic material. Materials for amorphous magnetic materials include:
For example, GaFe, TbFe, TbCo, TbFeCo
, GdTbFe, TbDyFe, GdFe, GdCo,
GdFeCo, TbFeO3, GdIG, etc. are preferably used.
【0014】記録層の厚さとしては、30〜300nm
が好ましく、その形成方法としては、例えば、真空蒸着
法、スパッタリング法等があげられるが、これらに限定
されるものではない。[0014] The thickness of the recording layer is 30 to 300 nm.
is preferable, and examples of methods for forming it include, but are not limited to, vacuum evaporation, sputtering, and the like.
【0015】(防湿膜)本発明では、記録層12が形成
されている側のプラスチック基板10の面と反対側の面
に防湿膜14が形成されている。この防湿膜は、プラズ
マ重合膜と、スパッタ膜とからなる。この膜厚としては
、50〜300nmが好ましい。(Moisture-proof film) In the present invention, a moisture-proof film 14 is formed on the surface of the plastic substrate 10 opposite to the surface on which the recording layer 12 is formed. This moisture-proof film consists of a plasma polymerized film and a sputtered film. The thickness of this film is preferably 50 to 300 nm.
【0016】[プラズマ重合膜]グロー放電を起こして
いる成膜室内に有機化合物の気体を導入すると、その気
体と放電の結果生じた電子とが衝突し、ラジカルやイオ
ン等の化学的に不安定な活性種が生成する。この活性種
により重合が促進される。このような重合をプラズマ重
合という。このような重合により形成された膜をプラズ
マ重合膜という。本発明において、プラズマ重合膜を形
成する有機モノマーとしては、有機化合物であれば特に
限定することなく広範囲のものが用いられるが、例えば
、次のような化合物が好適である。[Plasma polymerized film] When a gas of an organic compound is introduced into a film forming chamber where a glow discharge is occurring, the gas collides with the electrons generated as a result of the discharge, resulting in chemically unstable radicals and ions. active species are generated. This active species promotes polymerization. This type of polymerization is called plasma polymerization. A film formed by such polymerization is called a plasma polymerized film. In the present invention, the organic monomer forming the plasma polymerized film is not particularly limited and a wide range of organic compounds can be used, but for example, the following compounds are suitable.
【0017】・有機ケイ素化合物として、ビニルトリク
ロロシラン、テトラエトキシシラン、ビニルトリエトキ
シシラン、テトラビニルシラン、ビニルトリアセトキシ
シラン、ヘキサメチルジシラザン、テトラメチルシラン
、ビニルジメチルエトキシシラン、トリメトキシビニル
シラン、トリメトキシメチルシラン、ジエトキシジフェ
ニルシラン、ジフェニルエトキシメチルシラン、オクチ
ルトリエトキシシラン、ジエチルジフェニルシラン、ジ
フェニルメチルビニルシラン、テトラブチルシラン、テ
トラブトキシシラン、トリブチルビニルシラン、ジメト
キシジフェニルシラン、ジメチルフェニルシラン、ヘキ
サプロピルジシロキサン、ヘキサエチルジシロキサン、
ヘキサメチルジシロキサン等が例示される。- As organosilicon compounds, vinyltrichlorosilane, tetraethoxysilane, vinyltriethoxysilane, tetravinylsilane, vinyltriacetoxysilane, hexamethyldisilazane, tetramethylsilane, vinyldimethylethoxysilane, trimethoxyvinylsilane, trimethoxy Methylsilane, diethoxydiphenylsilane, diphenylethoxymethylsilane, octyltriethoxysilane, diethyldiphenylsilane, diphenylmethylvinylsilane, tetrabutylsilane, tetrabutoxysilane, tributylvinylsilane, dimethoxydiphenylsilane, dimethylphenylsilane, hexapropyldisiloxane, hexaethyldisiloxane,
Examples include hexamethyldisiloxane.
【0018】・フッ素系有機化合物として、6−フッ化
プロピレン、テトラフルオロエチレン、モノフルオロメ
タン、ジフルオロメタン、トリフルオロメタン、テトラ
フルオロメタン、テトラフルオロエタン、モノフルオロ
プロパン等が例示される。- Examples of fluorine-based organic compounds include 6-fluorinated propylene, tetrafluoroethylene, monofluoromethane, difluoromethane, trifluoromethane, tetrafluoromethane, tetrafluoroethane, and monofluoropropane.
【0019】・炭化水素系有機化合物として、メタン、
エタン、プロパン、ブタン、エチレン、プロピレン、ブ
テン、ブタジエン、アセチレン、プロピン、ブチン等が
例示される。- Hydrocarbon organic compounds include methane,
Examples include ethane, propane, butane, ethylene, propylene, butene, butadiene, acetylene, propyne, butyne, and the like.
【0020】・その他として、塩化ビニル、塩化ビニリ
デン、アクリロニトリル、アクリル酸、メチルメタクリ
レート、スチレン等が例示される。Other examples include vinyl chloride, vinylidene chloride, acrylonitrile, acrylic acid, methyl methacrylate, and styrene.
【0021】[スパッタ膜]スパッタリングは、放電の
結果生じたイオンがターゲットから原子をたたき出す現
象である。たたき出された原子は基板に到着して薄膜を
形成する。このようにして形成された膜をスパッタ膜と
いう。[Sputtered Film] Sputtering is a phenomenon in which ions generated as a result of electric discharge knock out atoms from a target. The ejected atoms arrive at the substrate and form a thin film. The film formed in this way is called a sputtered film.
【0022】本発明において、スパッタ膜を構成する材
料としては、例えば、Si,Al,Mg,Ca,Ti,
Zr,Zn等の無機化合物があげられる。より具体的に
は、Si,Al,Mg,Ca,Ti,Zr,Zn等の一
種または二種以上の窒化物あるいは酸化物があげられる
。もちろん窒化物あるいは酸化物にかぎるものではない
。In the present invention, materials constituting the sputtered film include, for example, Si, Al, Mg, Ca, Ti,
Examples include inorganic compounds such as Zr and Zn. More specifically, examples include nitrides or oxides of one or more of Si, Al, Mg, Ca, Ti, Zr, Zn, and the like. Of course, it is not limited to nitrides or oxides.
【0023】スパッタ膜を成膜する際のターゲット材料
としては、Si,Al,Mg,Ca,Ti,Zr,Zn
等を含有する材料を用いればよく、スパッタリングを行
うためのガスとしては、例えば、Ar,N2,O2等の
ガスが用いられる。なお、N2,O2を用いた場合には
、Si,Al,Mg,Ca,Ti,Zr,Zn等単体の
ターゲットを用いても反応性スパッタにより窒化物ある
いは酸化物を容易に生成せしめることができる。Target materials for forming sputtered films include Si, Al, Mg, Ca, Ti, Zr, and Zn.
For example, a gas such as Ar, N2, O2, etc. may be used as the gas for sputtering. Note that when N2 and O2 are used, nitrides or oxides can be easily generated by reactive sputtering even if single targets such as Si, Al, Mg, Ca, Ti, Zr, and Zn are used. .
【0024】[組成]プラズマ重合膜とスパッタ膜との
混合割合は、特に限定されないが、基板側をプラズマ重
合膜のみにより、また、防湿膜の表面側をスパッタ膜の
みにより構成し、その間において、混合割合を連続的に
変化せしめることが好ましい。なお、このように変化す
る組成をここでは傾斜組成という。[Composition] The mixing ratio of the plasma polymerized film and the sputtered film is not particularly limited, but the substrate side is composed only of the plasma polymerized film, and the surface side of the moisture-proof film is composed only of the sputtered film, and in between, It is preferable to continuously change the mixing ratio. Note that the composition that changes in this way is referred to herein as a gradient composition.
【0025】(製造方法例)記録層が形成されている面
とは反対側の基板面に、プラズマ重合膜と、スパッタ膜
との傾斜組成を有する防湿膜を形成するための装置例が
図4に示してある。(Example of manufacturing method) FIG. 4 shows an example of an apparatus for forming a moisture-proof film having a gradient composition of a plasma polymerized film and a sputtered film on the substrate surface opposite to the surface on which the recording layer is formed. It is shown in
【0026】図4において、111は成膜室を構成する
ベルジャーであり、ベルジャー111には、その内部に
原料モノマー121、スパッタ用ガス122を導入する
ためのラインが混合器119を介して設けられている。In FIG. 4, reference numeral 111 is a bell jar constituting a film forming chamber, and a line for introducing raw material monomer 121 and sputtering gas 122 into the bell jar 111 is provided through a mixer 119. ing.
【0027】プラスチック基板116は電極114上に
置かれており、また、対向電極113に一体的に取り付
けられたターゲット115がプラスチック基板116に
対向して配置されている。A plastic substrate 116 is placed on the electrode 114, and a target 115, which is integrally attached to the counter electrode 113, is placed opposite the plastic substrate 116.
【0028】かかる装置を用いてプラスチック基板に防
湿膜を成膜するには次のように行えばよい。A moisture-proof film can be formed on a plastic substrate using such an apparatus as follows.
【0029】ベルジャー111内を、油拡散ポンプ11
7、油回転ポンプ118を作動させることにより10ー
5Torr程度に排気し、その後プラズマ重合用の原料
ガスを混合器119を介して所定の流量供給し、ベルジ
ャー111内を10〜10ー4Torrの範囲内で維持
し、プラズマ発生電源112をオンにして放電を開始す
る。
放電の開始にともない重合が行われ、プラズマ膜が形成
される。次いで、プラズマ重合用の原料ガスの流量を徐
々に落として行き、スパッタ用のガスの供給を始めれば
、プラズマ重合膜とスパッタ膜とからなる防湿膜が形成
される。なお、最終的に、スパッタ用のガスのみとする
と、プラスチック基板116上にプラズマ重合膜とスパ
ッタ膜との傾斜組成を有する防湿膜が形成される。Inside the bell jar 111, the oil diffusion pump 11
7. Operate the oil rotary pump 118 to exhaust the air to about 10-5 Torr, and then supply raw material gas for plasma polymerization at a predetermined flow rate via the mixer 119 to bring the inside of the bell jar 111 to a pressure in the range of 10 to 10-4 Torr. The plasma generation power source 112 is turned on to start discharging. Polymerization occurs with the start of discharge, forming a plasma film. Next, the flow rate of the source gas for plasma polymerization is gradually reduced and the supply of gas for sputtering is started, thereby forming a moisture-proof film consisting of a plasma polymerized film and a sputtered film. Note that, in the end, if only the sputtering gas is used, a moisture-proof film having a gradient composition of the plasma polymerized film and the sputtered film is formed on the plastic substrate 116.
【0030】なお、プラズマ発生電源としては高周波電
源、マイクロ波電源、直流電源、交流電源等いずれも利
用できる。また、プラズマ重合膜部を外部放電電極のア
フターグロー放電重合で行うこともできる。[0030] As the plasma generation power source, any of a high frequency power source, a microwave power source, a direct current power source, an alternating current power source, etc. can be used. Further, the plasma polymerized film portion can also be formed by afterglow discharge polymerization using an external discharge electrode.
【0031】以上のようにして、記録層が形成された面
とは反対側の面に、傾斜組成を有する防湿膜を形成し、
次いでその裏面に誘電体膜、記録膜、保護膜を順次形成
すれば、図1に示す構造の光情報記録媒体を得ることが
できる。As described above, a moisture-proof film having a gradient composition is formed on the surface opposite to the surface on which the recording layer is formed,
Next, by sequentially forming a dielectric film, a recording film, and a protective film on the back surface, an optical information recording medium having the structure shown in FIG. 1 can be obtained.
【0032】[0032]
【作用】本発明においては、記録層が形成されている面
とは反対側の基板面に、プラズマ重合膜と、スパッタ膜
とからなる防湿膜を有しているため、長期にわたり基板
の変形をおさえた信頼性の高い光情報記録媒体を得るこ
とが可能となる。[Operation] In the present invention, since a moisture-proof film made of a plasma polymerized film and a sputtered film is provided on the surface of the substrate opposite to the surface on which the recording layer is formed, deformation of the substrate is prevented over a long period of time. It becomes possible to obtain an optical information recording medium with low reliability and high reliability.
【0033】[0033]
【実施例】以下に、本発明の実施例を、比較例とともに
説明する。[Examples] Examples of the present invention will be described below along with comparative examples.
【0034】(実施例)本例では、図4に示す装置を用
いて図1に示す構造の光情報記録媒体1を作製した。(Example) In this example, the optical information recording medium 1 having the structure shown in FIG. 1 was manufactured using the apparatus shown in FIG.
【0035】直径130mm、厚さ1.2mmのポリカ
ーボネート基板10を図4に示す装置内にセットし、一
旦10ー5Torrの真空度に引いた後、下記の表1に
示す条件にてプラズマ重合膜とスパッタ膜との傾斜組成
を有する膜14aを防湿膜14として記録層12とは反
対側の面に形成した。なお、防湿膜14の全厚みは12
0nmとした。A polycarbonate substrate 10 with a diameter of 130 mm and a thickness of 1.2 mm was set in the apparatus shown in FIG. A film 14a having a composition gradient of that of the sputtered film was formed as the moisture-proof film 14 on the surface opposite to the recording layer 12. Note that the total thickness of the moisture-proof film 14 is 12
It was set to 0 nm.
【0036】その際、プラズマ重合膜用の原料モノマー
としてトリメトキシビニルシランを用い、スパッタ用ガ
スとしてArを用い、ターゲットにはSi3N4を用い
た。At that time, trimethoxyvinylsilane was used as a raw material monomer for the plasma polymerized film, Ar was used as a sputtering gas, and Si3N4 was used as a target.
【0037】[0037]
【0038】なお、プラズマ重合膜とスパッタ膜との傾
斜組成を有する膜をIR(赤外線吸収スペクトル)によ
り確認した。その確認は、表1に示す、No.1,No
.5,No.8のみの単独の条件でKBr基板上に成膜
し、その膜を透過で測定して行った。その測定結果を図
5に示す。プラズマ重合膜の比率が低くなるほど(No
.1→No.8)透過度は低下していくことがわかる。[0038] A film having a gradient composition between the plasma polymerized film and the sputtered film was confirmed by IR (infrared absorption spectrum). The confirmation is shown in Table 1, No. 1, No
.. 5, No. A film was formed on a KBr substrate under a single condition of No. 8, and the film was measured by transmission. The measurement results are shown in FIG. The lower the ratio of plasma polymerized film (No.
.. 1→No. 8) It can be seen that the transmittance decreases.
【0039】上記条件により形成した防湿膜14とは反
対側の基板10の面上に、誘電体層11としてSi3N
4を、記録層12としてTbFeCoを、さらに、記録
層12上の保護層13としてSi3N4を、順次スパッ
タ法によりそれぞれ100nm厚に積層した。Si3N is deposited as a dielectric layer 11 on the surface of the substrate 10 opposite to the moisture-proof film 14 formed under the above conditions.
4, TbFeCo as the recording layer 12, and Si3N4 as the protective layer 13 on the recording layer 12 were sequentially laminated to a thickness of 100 nm by sputtering.
【0040】なお、スパッタリングの条件は、下記の通
りとした。The sputtering conditions were as follows.
【0041】動作圧力 10−2Tor
r高周波パワー 300W
周波数 13.56MHzガス
Ar[0041] Operating pressure: 10-2 Torr
rHigh frequency power 300W Frequency 13.56MHz Gas
Ar
【0042】その後、最外面に、紫外線硬化樹脂(大日
本インキ化学株式会社製、商品名:SD−304)をス
ピンコート法により、12μmの厚さに設け、160w
/cm、30秒紫外線照射し、架橋、硬化させ、紫外線
樹脂硬化層15をトップコートとして形成することによ
り図1に示す構造の光磁気情報記録媒体1を作製した。[0042] Thereafter, an ultraviolet curable resin (manufactured by Dainippon Ink Chemical Co., Ltd., trade name: SD-304) was applied to the outermost surface to a thickness of 12 μm using a spin coating method.
A magneto-optical information recording medium 1 having the structure shown in FIG. 1 was prepared by irradiating the film with ultraviolet light for 30 seconds to crosslink and cure the resin, and then forming a cured ultraviolet resin layer 15 as a top coat.
【0043】(比較例1)本例では、図2に示す構造の
光情報記録媒体1を作製した。(Comparative Example 1) In this example, an optical information recording medium 1 having the structure shown in FIG. 2 was manufactured.
【0044】本例では、実施例と同様の基板10を用い
た。基板10の記録層11とは反対側の面に、実施例の
条件No.1を5分間行って、プラズマ重合膜14bを
形成し、次いで、十分排気後、条件No.9を7分間行
いスパッタ膜14bを形成することにより防湿膜14を
形成した。その後、実施例と同様に、誘電体層11、記
録層12、保護層13、紫外線樹脂硬化層15を記録面
側に形成し、図2に示す構造の光情報記録媒体1を作製
した。すなわち、本例においては、防湿膜14はプラズ
マ重合膜14bのみからなる膜と、スパッタ膜14cの
みからなる膜とが積層した構造となっている。In this example, the same substrate 10 as in the example was used. Condition No. of the example was applied to the surface of the substrate 10 opposite to the recording layer 11. 1 was carried out for 5 minutes to form the plasma polymerized film 14b, and then, after sufficient exhaust, the condition No. 1 was carried out for 5 minutes. 9 for 7 minutes to form a sputtered film 14b, thereby forming the moisture-proof film 14. Thereafter, in the same manner as in the example, a dielectric layer 11, a recording layer 12, a protective layer 13, and an ultraviolet resin hardening layer 15 were formed on the recording surface side, thereby producing an optical information recording medium 1 having the structure shown in FIG. 2. That is, in this example, the moisture-proof film 14 has a structure in which a film made only of the plasma polymerized film 14b and a film made only of the sputtered film 14c are laminated.
【0045】(比較例2)本例では、図3に示す構造の
光情報記録媒体1を作製した。(Comparative Example 2) In this example, an optical information recording medium 1 having the structure shown in FIG. 3 was manufactured.
【0046】本例では、実施例と同様の基板10を用い
た。この基板10の記録層12とは反対側の面に直接条
件No.9のスパッタ条件により100nmのスパッタ
膜14cを形成し防湿膜14とし、以下実施例と同様に
、誘電体層11、記録層12、保護層13、紫外線樹脂
硬化層15を記録面側に形成し図3に示す構造の光情報
記録媒体1を作製した。すなわち、本例においては、防
湿膜14はスパッタ膜14cのみからなる単一膜が形成
された構造となっている。In this example, the same substrate 10 as in the example was used. Condition No. 1 was applied directly to the surface of the substrate 10 opposite to the recording layer 12. A 100 nm sputtered film 14c was formed under the sputtering conditions of 9 to serve as the moisture-proof film 14, and then similarly to the example, a dielectric layer 11, a recording layer 12, a protective layer 13, and an ultraviolet resin hardening layer 15 were formed on the recording surface side. An optical information recording medium 1 having the structure shown in FIG. 3 was manufactured. That is, in this example, the moisture-proof film 14 has a structure in which a single film consisting of only the sputtered film 14c is formed.
【0047】実施例、比較例1、比較例2で作成した3
種類の光情報記録媒体を温度80℃、湿度90%の環境
下で、500hrの加速劣化試験を行ない、その後、室
温に48時間放置後、図6に示す反りを測定する装置に
て、温度湿度変化による光情報記録媒体の反り量を調べ
た。図6に示す装置は、恒温恒湿室220の前面が光学
ガラス225になっており、レーザー光223を外から
ミラー222と光情報記録媒体221とに入射し、反射
光を記録紙224に記録して光情報記録媒体の反り量を
出すものである。3 prepared in Example, Comparative Example 1, and Comparative Example 2
Various types of optical information recording media were subjected to an accelerated deterioration test for 500 hours in an environment with a temperature of 80°C and a humidity of 90%, and then left at room temperature for 48 hours. The amount of warpage of the optical information recording medium due to changes was investigated. In the apparatus shown in FIG. 6, the front surface of a constant temperature and humidity chamber 220 is an optical glass 225, a laser beam 223 is incident on a mirror 222 and an optical information recording medium 221 from the outside, and the reflected light is recorded on a recording paper 224. This method calculates the amount of warpage of the optical information recording medium.
【0048】加速劣化試験後48時間放置した後、それ
ぞれの光情報記録媒体を図6に示す恒温恒湿室200内
にセットし、温度60℃、湿度30%から温度60℃、
湿度80%へ10分間で変化させ、そのときの光情報記
録媒体の反り量の変化を調べた。その結果を図7に示す
。After leaving for 48 hours after the accelerated deterioration test, each optical information recording medium was set in a constant temperature and humidity chamber 200 shown in FIG.
The humidity was changed to 80% for 10 minutes, and the change in the amount of warpage of the optical information recording medium at that time was examined. The results are shown in FIG.
【0049】比較例1(○)、比較例2(△)の光情報
記録媒体は、温度80℃、湿度90%環境下における5
00hrでの加速劣化試験において、微少なクラックや
剥離が防湿膜に生じており、防湿性能がおちてしまって
いる。しかし、実施例(□)のものは、防湿膜が密着性
よく形成されており、光情報記録媒体の反りは見られな
かった。The optical information recording media of Comparative Example 1 (○) and Comparative Example 2 (△) were
In the accelerated deterioration test at 00 hours, minute cracks and peeling occurred in the moisture-proof film, and the moisture-proof performance deteriorated. However, in Example (□), the moisture-proof film was formed with good adhesion, and no warping of the optical information recording medium was observed.
【0050】[0050]
【発明の効果】防湿膜の密着性が良好であり、吸湿によ
る基板の変形を長期間にわたりおさえた長期信頼性の高
い光情報記録媒体を得ることが可能となった。[Effects of the Invention] It has become possible to obtain an optical information recording medium with high long-term reliability in which the adhesion of the moisture-proof film is good and the deformation of the substrate due to moisture absorption is suppressed for a long period of time.
【図1】 実施例に係る光情報記録媒体の断面構造図
である。FIG. 1 is a cross-sectional structural diagram of an optical information recording medium according to an example.
【図2】 比較例1に係る光情報記録媒体断面構造図
である。FIG. 2 is a cross-sectional structural diagram of an optical information recording medium according to Comparative Example 1.
【図3】 比較例2に係る光情報記録媒体断面構造図
である。FIG. 3 is a cross-sectional structural diagram of an optical information recording medium according to Comparative Example 2.
【図4】 本発明製造方法において用いる成膜装置例
の概念図である。FIG. 4 is a conceptual diagram of an example of a film forming apparatus used in the manufacturing method of the present invention.
【図5】 防湿膜の赤外吸収スペクトルを示すグラフ
である。FIG. 5 is a graph showing an infrared absorption spectrum of a moisture-proof film.
【図6】 光情報記録媒体の反りを測定するための装
置の外面図である。FIG. 6 is an external view of an apparatus for measuring warpage of an optical information recording medium.
【図7】 反り量の測定結果を示すグラフである。FIG. 7 is a graph showing the measurement results of the amount of warpage.
1 光情報記録媒体
10 プラスチック基板
11 誘電体層 12
記録層 13 保護層
14 防湿膜
14a プラズマ重合膜とスパッタ
膜との混合膜14b プラズマ重合
14c スパッタ膜1 Optical information recording medium 10 Plastic substrate 11 Dielectric layer 12
Recording layer 13 Protective layer 14 Moisture-proof film
14a Mixed film of plasma polymerized film and sputtered film 14b Plasma polymerized film 14c Sputtered film
Claims (2)
らなる記録層を有する光情報記録媒体において、該記録
層が形成されている面とは反対側の基板面に、プラズマ
重合膜とスパッタ膜とからなる防湿膜を有することを特
徴とする光情報記録媒体。Claim 1: In an optical information recording medium having a recording layer made of an amorphous magnetic material on a plastic substrate, a plasma polymerized film and a sputtered film are provided on the surface of the substrate opposite to the surface on which the recording layer is formed. An optical information recording medium characterized by having a moisture-proof film consisting of.
に、プラズマ重合用の原料を供給して放電を開始し、次
いで、プラズマ重合用の原料の供給量を徐々に減少させ
るとともにスパッタ用のガスの供給を開始し、最終的に
スパッタ用のガスのみを供給してプラズマ重合膜とスパ
ッタ膜とからなる防湿膜をプラスチック基板上の記録層
が形成される面とは反対側の面に形成することを特徴と
する光情報記録媒体の製造方法。2. A raw material for plasma polymerization is supplied to a film forming chamber in which a plastic substrate is placed, and discharge is started, and then the supply amount of the raw material for plasma polymerization is gradually decreased, and a gas for sputtering is gradually reduced. and finally only the sputtering gas is supplied to form a moisture-proof film consisting of a plasma polymerized film and a sputtered film on the surface of the plastic substrate opposite to the surface on which the recording layer is formed. A method for manufacturing an optical information recording medium, characterized in that:
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP40703790A JPH04222940A (en) | 1990-12-26 | 1990-12-26 | Optical information recording medium and its production |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP40703790A JPH04222940A (en) | 1990-12-26 | 1990-12-26 | Optical information recording medium and its production |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH04222940A true JPH04222940A (en) | 1992-08-12 |
Family
ID=18516665
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP40703790A Pending JPH04222940A (en) | 1990-12-26 | 1990-12-26 | Optical information recording medium and its production |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH04222940A (en) |
-
1990
- 1990-12-26 JP JP40703790A patent/JPH04222940A/en active Pending
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