JPH0422128A - Nitriding treatment method of silicon oxide film - Google Patents
Nitriding treatment method of silicon oxide filmInfo
- Publication number
- JPH0422128A JPH0422128A JP12749190A JP12749190A JPH0422128A JP H0422128 A JPH0422128 A JP H0422128A JP 12749190 A JP12749190 A JP 12749190A JP 12749190 A JP12749190 A JP 12749190A JP H0422128 A JPH0422128 A JP H0422128A
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- silicon oxide
- nitriding
- substrate
- ammonia gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 32
- 229910052814 silicon oxide Inorganic materials 0.000 title claims abstract description 29
- 238000005121 nitriding Methods 0.000 title claims abstract description 28
- 238000000034 method Methods 0.000 title claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 18
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 17
- 238000000137 annealing Methods 0.000 claims description 4
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 abstract description 7
- 229910052753 mercury Inorganic materials 0.000 abstract description 7
- 238000010438 heat treatment Methods 0.000 abstract description 6
- 230000008646 thermal stress Effects 0.000 abstract description 5
- 230000000717 retained effect Effects 0.000 abstract 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 229910052736 halogen Inorganic materials 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- -1 tungsten halogen Chemical class 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】 （イ）産業上の利用分野 この発明は、酸化シリコン膜の窒化処理方法に関する。[Detailed description of the invention] (b) Industrial application fields The present invention relates to a method for nitriding a silicon oxide film.
ことに、半導体装置の製造に用いられる。In particular, it is used in the manufacture of semiconductor devices.
（ロ）従来の技術
従来、ゲート絶縁膜（酸化シリコン）の膜質を高め信頼
性を向上させるのに、Ｎ Ｈ３ガスによる酸化／リコノ
膜の窒化技術が検討されている。特に、最近では、短時
間処理で空気の巻き込みも防止できるＲ Ｔ Ａ （Ｒ
ａｐｔｄ Ｔｈｅｒｎａｌ Ａｒｒｅａｌｉｎｇ）によ
る酸化シリコン膜の窒化技術が積極的に開発されている
。このＲＴＡの加熱用光源は、通常長波長側ノスペクト
ルをＷするタノグステノハロケ７ランプか用いられる。(b) Conventional Technology Conventionally, oxidation/nitriding technology of silicon film using NH3 gas has been studied to improve the film quality of gate insulating film (silicon oxide) and improve reliability. In particular, recently, RTA (R
A technology for nitriding a silicon oxide film using aptd (thermal arrealing) technology is being actively developed. The heating light source for this RTA is usually a Tanogsteno Haloke 7 lamp that emits a W spectrum on the long wavelength side.
（ハ）発明が解決しようとする課題
上述の酸化シリコン膜の窒化処理方法は、有効な窒化反
応を行うには１２００°Ｃ程度の高温が必要となる。し
かし、この様な高温域では基板表面に熱ストレスによる
スリップラインか発生するとＬ）う問題がある。(c) Problems to be Solved by the Invention The method for nitriding a silicon oxide film described above requires a high temperature of about 1200° C. to carry out an effective nitriding reaction. However, in such a high temperature range, there is a problem that slip lines may be generated on the substrate surface due to thermal stress.
この発明は、上記問題を！決するｆ二めになされた乙の
であって、窒化処理の粍による基板表面の熱ストレスか
小さく基板表面にスリップラインを発生させることなく
窒化処理を行うことのできろ酸化シリコン膜の窒化処理
方法を提供しようとするものである。This invention solves the above problem! The second step was to develop a method for nitriding a silicon oxide film, which minimizes the thermal stress on the substrate surface due to nitriding and allows nitriding to be performed without generating slip lines on the substrate surface. This is what we are trying to provide.
（ニ）課題を解決するｒニめの手段
この発明によれば、アンモニアガス雰囲気中に表面に酸
化シリコン膜か形成されｆこ基板が配置されｒ二状態で
、アンモニアガス分解性の光を照射すると共に該基板に
約７００−１０５（１℃の瞬時熱アニルを施すことによ
り上記酸化シリコン膜を窒化することを特徴とする酸化
ンリコン膜の窒化処理方法か提供されろ。(d) Second means for solving the problem According to the present invention, a silicon oxide film is formed on the surface of the substrate in an ammonia gas atmosphere, and the substrate is placed in the second state and irradiated with light that decomposes the ammonia gas. In addition, please provide a method for nitriding a silicon oxide film, characterized in that the silicon oxide film is nitrided by subjecting the substrate to instantaneous thermal annealing at about 700-105°C (1°C).
上記アンモニアガス雰囲気は、基板上の酸化シリコン膜
の窒化処理には対する窒素の供給を行うためのらのであ
って、通常真空又は不活性ガス中に、１００〜７６０Ｔ
ｏｒｒの分圧（標準状態換算値）を有するようにアンモ
ニアガスを供給して形成することができる。The ammonia gas atmosphere mentioned above is for supplying nitrogen for the nitriding process of the silicon oxide film on the substrate, and is usually in vacuum or inert gas at a temperature of 100 to 760 T.
It can be formed by supplying ammonia gas so as to have a partial pressure (converted value under standard conditions) of orr.
上記酸化シリコン膜は、窒化処理を施して窒化酸化シリ
コン膜を構成するためのものであって、ンリコン基板上
の所定領域に、通常０００５〜０．０２μｍの膜厚にし
て形成することかできる。この膜の形成は、例えば熱酸
化法、ＣＶＤ法等によって行うことができる。The above-mentioned silicon oxide film is to be subjected to nitriding treatment to form a silicon nitride oxide film, and can be formed in a predetermined region on the silicon substrate to a thickness of usually 0.005 to 0.02 μm. This film can be formed by, for example, a thermal oxidation method, a CVD method, or the like.
上記アンモニアガス分解性の光は、上記アンモニアガス
を分解してこの分解物と上記酸化シリコン膜との反応を
促進するためのらのであって、通常波長０１８５．０２
５４μｍ（水銀ランプ）の光を用いることができる。ま
た、この光の光強度は、通常２０〜３０Ｋｗとするのが
好ましい。The ammonia gas decomposing light is a light for decomposing the ammonia gas and promoting the reaction between the decomposed product and the silicon oxide film, and has a normal wavelength of 0185.02.
Light of 54 μm (mercury lamp) can be used. Moreover, it is preferable that the light intensity of this light is usually 20 to 30 Kw.
この光の光源装置としては、例えば水銀ラップ等が好ま
しい。As a light source device for this light, for example, a mercury wrap or the like is preferable.
上記瞬時熱アニールは、該基板表面の酸化ンリコン膜を
比較的低温て加熱処理するｆこめのらのであって、通常
約７００〜１０５０℃好ましくは９００〜１０５０℃の
温度で１０〜１２０秒間基板を加熱して行うことかでき
る。この温度か約７ＤｒＪ℃未満では上記酸化シリコン
膜を窒化酸化シリコン膜に変換するための反応が遅すぎ
るので好ましくない。この温度か１０５０℃超では基板
表面に熱ストレスによるスリップラインが発生するので
好ましくない。瞬時熱アニール装置としては、例えばタ
ングステンハロゲンランプ、アークランプ等を用いるこ
とができる。The above-mentioned instantaneous thermal annealing is a process of heating the silicon oxide film on the surface of the substrate at a relatively low temperature. It can be done by heating. If the temperature is less than about 7 DrJ°C, the reaction for converting the silicon oxide film into a silicon nitride oxide film is too slow, which is not preferable. If this temperature exceeds 1050° C., slip lines will occur on the substrate surface due to thermal stress, which is not preferable. As the instantaneous thermal annealing device, for example, a tungsten halogen lamp, an arc lamp, etc. can be used.
上記酸化シリコン膜の窒化処理によって形成された窒化
酸化シリコン膜は、例えばトランジスタのゲート絶縁膜
、キャパンター絶縁膜等に用いられ、半導体装置を構成
することかできる。A silicon nitride oxide film formed by the nitriding treatment of the silicon oxide film described above can be used, for example, as a gate insulating film of a transistor, a capantor insulating film, etc., and can constitute a semiconductor device.
（ホ）作用
アンモニアガス分解性の光が、アンモニアガスを分解し
、この分解物と酸化シリコン膜との反応を促進し窒化処
理に必要な温度を低下させる。(E) Effect The ammonia gas decomposing light decomposes the ammonia gas, promotes the reaction between the decomposed products and the silicon oxide film, and lowers the temperature required for the nitriding process.
（へ）実施例 この発明の実施例を図面を用いて説明する。(f) Example Embodiments of the invention will be described with reference to the drawings.
窒化装置
第１図に示すように、水冷可能な金＠壁ｌ′の内部にチ
ャンバー１が形成され、このチャンバーの上方は石英窓
６で区切られこの上部に水銀ラップ２を配設する。この
チャンバーの下方は石英窓７で区切られこの下部にタン
グステンハロゲンランプ３を並列配設する。Nitriding Apparatus As shown in FIG. 1, a chamber 1 is formed inside a water-coolable gold@wall l', the upper part of this chamber is partitioned by a quartz window 6, and a mercury wrap 2 is disposed above this. The lower part of this chamber is divided by a quartz window 7, and tungsten halogen lamps 3 are arranged in parallel in the lower part.
水冷可能な金属壁１°にはチャンバー１内の排気及びア
ンモニアガスの吸気のための排吸気口４を設置して窒化
装置を構成する。A nitriding apparatus is constructed by installing an exhaust inlet 4 for exhausting the chamber 1 and inlet of ammonia gas at 1° of the water-coolable metal wall.
酸化シリコン膜の窒化処理
上記窒化装置のチャンバー１内にサセプター８で支持し
て表面に酸化ノリクン膜か形成されｒニウエハ−５を配
設する。Nitriding treatment of silicon oxide film A wafer 5 having an oxide film formed on its surface is placed in the chamber 1 of the nitriding apparatus, supported by a susceptor 8.
次に、このチャンバー１内を真空度１ ｘｘＴｏｒｒ以
下になるまで排吸気口４から真空ポンプによって排気す
る。Next, the inside of this chamber 1 is evacuated from the exhaust inlet 4 by a vacuum pump until the degree of vacuum becomes 1 xx Torr or less.
次に、このチャツバ−１内に排吸気口４を通して１ｏＯ
Ｔｏｒｒになるまてアンモニアガスを吸気させる。Next, pass the exhaust air inlet 4 into this chatbar 1 and
Inhale ammonia gas until Torr becomes low.
次に、出力２０ＫＷの水銀ランプ２に電流を流して波長
０１８５．０２５４μｍ（水銀ランプ）の光をチャンバ
ー内に照射すると共に２０ＫＹのタングステンハロゲン
ランプを１０〜１５１ｔｌ並へて構成し几ランプ加熱装
置に電流を流して上記ウェハー５を９００〜１０５０℃
で６０秒間加鴫処理し、ウェハー５表面の酸化シリコン
膜を窒化する。Next, a current is applied to the mercury lamp 2 with an output of 20 KW to irradiate light with a wavelength of 0185.0254 μm (mercury lamp) into the chamber, and a 20 KY tungsten halogen lamp is arranged in a row of 10 to 151 liters to form a lamp heating device. A current is applied to the wafer 5 at 900 to 1050°C.
Then, the silicon oxide film on the surface of the wafer 5 is nitrided by a oxidizing process for 60 seconds.
この加熱処理後金属壁ｌ°に冷水を通してチャンバー内
を冷却し、上記窒化処理された酸化シリコン膜を有する
ウェハーを取り出す。After this heat treatment, cold water is passed through the metal wall l° to cool the inside of the chamber, and the wafer having the nitrided silicon oxide film is taken out.
得られたウェハーは、その表面の酸化シリコン膜が、ス
リップラインの発生かなく絶縁性が高く信頼性に優れに
窒化酸化シリコン膜に変換れていることか認められた。It was confirmed that the silicon oxide film on the surface of the obtained wafer had been converted into a silicon nitride oxide film with high insulating properties and excellent reliability without the occurrence of slip lines.
（ト）発明の効果
この発明によれば、窒化処理温度を比較的低下させるこ
とかでき、窒化処理の熱による基板表面の熱ストレスを
小さくて基板表面にスリップラインを発生させることな
く窒化処理を行うことのできる酸化ンリコン膜の窒化処
理方法を提供することかできる。この発明の方法を用い
てトランジスタのゲート絶縁膜を形成することにより、
絶縁性に優れ、信頼性の高いトランジスタからなる半導
体装置を製造することができる。(G) Effects of the Invention According to this invention, the nitriding temperature can be relatively lowered, the thermal stress on the substrate surface due to the heat of the nitriding process can be reduced, and the nitriding process can be performed without generating slip lines on the substrate surface. It is also possible to provide a method for nitriding a silicon oxide film that can be performed. By forming a gate insulating film of a transistor using the method of this invention,
A semiconductor device including a transistor with excellent insulation and high reliability can be manufactured.
第１図は、この発明の実施例で用いた窒化装置の説明図
である。
チャンバー １′・・・・冷却可能な金属壁、水銀ラン
プ、
・タングステンハロゲンランプ、
吸排気口、５・ ・ウェハー
７・・・・石英窓、８ ・サセプター１ ・
２・・ ・
３ ・
４ ・
箪
図FIG. 1 is an explanatory diagram of a nitriding apparatus used in an embodiment of the present invention. Chamber 1'... Coolable metal wall, mercury lamp, ・Tungsten halogen lamp, intake/exhaust port, 5... Wafer 7... Quartz window, 8 ・Susceptor 1 ・ 2 ・ ・ 3 ・ 4 ・commode
Claims (1)
形成された基板が配置された状態で、アンモニアガス分
解性の光を照射すると共に該基板に約７００〜１０５０
℃の瞬時熱アニールを施すことにより上記酸化シリコン
膜を窒化することを特徴とする酸化シリコン膜の窒化処
理方法。1. With a substrate on which a silicon oxide film is formed on the surface placed in an ammonia gas atmosphere, ammonia gas decomposable light is irradiated and the substrate is heated to about 700 to 1050
A method for nitriding a silicon oxide film, characterized in that the silicon oxide film is nitrided by instantaneous thermal annealing at .degree.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12749190A JPH0422128A (en) | 1990-05-17 | 1990-05-17 | Nitriding treatment method of silicon oxide film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12749190A JPH0422128A (en) | 1990-05-17 | 1990-05-17 | Nitriding treatment method of silicon oxide film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0422128A true JPH0422128A (en) | 1992-01-27 |
Family
ID=14961273
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12749190A Pending JPH0422128A (en) | 1990-05-17 | 1990-05-17 | Nitriding treatment method of silicon oxide film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0422128A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009212537A (en) * | 2000-11-28 | 2009-09-17 | Sumco Corp | Method for producing silicon wafer and silicon wafer |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6260226A (en) * | 1985-09-10 | 1987-03-16 | Seiko Epson Corp | High speed optical oxidation and nitrification device |
| JPS63276270A (en) * | 1987-05-08 | 1988-11-14 | Nec Corp | Manufacture of radiation resistant semiconductor device |
-
1990
- 1990-05-17 JP JP12749190A patent/JPH0422128A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6260226A (en) * | 1985-09-10 | 1987-03-16 | Seiko Epson Corp | High speed optical oxidation and nitrification device |
| JPS63276270A (en) * | 1987-05-08 | 1988-11-14 | Nec Corp | Manufacture of radiation resistant semiconductor device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009212537A (en) * | 2000-11-28 | 2009-09-17 | Sumco Corp | Method for producing silicon wafer and silicon wafer |
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