JPH04220905A - Manufacture of sintered body for high frequency dielectric substance - Google Patents

Manufacture of sintered body for high frequency dielectric substance

Info

Publication number
JPH04220905A
JPH04220905A JP2404558A JP40455890A JPH04220905A JP H04220905 A JPH04220905 A JP H04220905A JP 2404558 A JP2404558 A JP 2404558A JP 40455890 A JP40455890 A JP 40455890A JP H04220905 A JPH04220905 A JP H04220905A
Authority
JP
Japan
Prior art keywords
sintered body
oxide
high frequency
calcined
mgo
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2404558A
Other languages
Japanese (ja)
Other versions
JPH0817053B2 (en
Inventor
Kunio Tochi
邦生 土地
Hisakazu Fujimoto
藤本 久和
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikko Co Ltd
Nikko KK
Original Assignee
Nikko Co Ltd
Nikko KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikko Co Ltd, Nikko KK filed Critical Nikko Co Ltd
Priority to JP2404558A priority Critical patent/JPH0817053B2/en
Publication of JPH04220905A publication Critical patent/JPH04220905A/en
Publication of JPH0817053B2 publication Critical patent/JPH0817053B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Abstract

PURPOSE:To provide a sintered body for high frequency dielectric substance having excellent dielectric characteristic and high density easily at a low cost by adding B-oxide to a provisionally baked object expressed by AB1/3C2/3O3, and subjecting the resultant to a baking process. CONSTITUTION:To obtain a BMT sintered body for perovskite type high frequency dielectric substance expressed by AB1/3C2/3O3, first the powders of BaCO3, MgO, and Ta2O5 as starting material are measured and subjected to preliminary baking at 1100 deg.C. Then the powders are cooled, crushed in pure water, dried, and subjected to two runs of provisional baking at 1300 deg.C. A powder of MgO is added to this provisionally baked object, and the resultant is subjected to pressure molding into a specified shape, a baking process at 1600 deg.C, and further a heat treatment at 1450 deg.C. Therein the B-oxide added in the regular baking process exerts a sintering promoting effect for the provisionally baked object, so as to accomplish a dense sintered substance with no cracks. Thus a sintered substance equipped with excellent dielectric characteristics is obtained easily and at a low cost.

Description

【発明の詳細な説明】[Detailed description of the invention]

【0001】0001

【産業上の利用分野】この発明は、高周波誘電体用焼結
体の製造方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a sintered body for high frequency dielectrics.

【0002】0002

【従来の技術】従来、マイクロ波領域において高誘電率
および高Q値をもつ高周波誘電体用焼結体として、Ba
Mg1/3 Ta2/3 O3 (=Ba3 MgTa
2 O9 )であらわされるペロブスカイト型高周波誘
電体用焼結体(以下、適宜「BMT焼結体」と言う)が
ある。
[Prior Art] Conventionally, Ba
Mg1/3 Ta2/3 O3 (=Ba3 MgTa
There is a perovskite-type sintered body for high-frequency dielectrics (hereinafter appropriately referred to as "BMT sintered body") represented by 2O9).

【0003】この高周波誘電体用焼結体は、原料配合物
を仮焼して得た仮焼物を本焼成し焼結させることで得ら
れている。しかし、BMT焼結体は、一般に、誘電特性
の良い焼結体を歩留まりよく得ることが困難であるとさ
れている。得られた焼結体の緻密度が低かったり、焼結
体にクラックが入っていたりすることが多いからである
[0003] This sintered body for high-frequency dielectrics is obtained by calcining a calcined material obtained by calcining a raw material mixture, and then subjecting it to main firing and sintering. However, it is generally said that it is difficult to obtain a sintered body with good dielectric properties at a high yield of BMT sintered bodies. This is because the density of the obtained sintered body is often low or cracks are present in the sintered body.

【0004】緻密度を高めるために、本焼成での昇温速
度を100℃/分と急速に上げる方法が提案されている
が、この急速昇温焼成では、焼成コストが高くて電子デ
バイス(例えば、共振器)の低価格化が困難であるため
、量産に適さず実用性が低い。
[0004] In order to increase the density, a method has been proposed in which the temperature increase rate in the main firing is rapidly increased to 100°C/min. , resonators), making them unsuitable for mass production and of low practicality.

【0005】[0005]

【発明が解決しようとする課題】上記事情に鑑み、この
発明は誘電特性の優れた安価な高周波誘電体用焼結体を
容易に製造することのできる方法を提供することを課題
とする。
SUMMARY OF THE INVENTION In view of the above-mentioned circumstances, it is an object of the present invention to provide a method for easily producing an inexpensive sintered body for high-frequency dielectrics having excellent dielectric properties.

【0006】[0006]

【課題を解決するための手段】発明者は、上記課題を解
決するため、BMT焼結体について、様々な方向から検
討し、つぎのようなことを見出した。すなわち、100
0〜1100℃程度で仮焼した仮焼物の粉末を用いた場
合の焼結体には、クラック発生があるために誘電特性は
十分でないが、緻密度は十分である。クラック発生が起
こるのは、仮焼物中に未反応で残るBaCO3 、Mg
OおよびBaTa2 O6 の3者が焼成過程で再反応
するからと考えた。他方、1300〜1400℃程度で
仮焼した粉末を焼成して得た焼結体には、クラックの発
生はないが緻密度で劣るということを見出した。そこで
、緻密度の劣る原因を詳しく検討した結果、仮焼温度が
1300〜1400℃の場合には反応が十分に進んでい
るためにMgOは殆ど残存しないが、仮焼温度1000
〜1100℃の場合にはMgOが残存するためではない
か、と推察したのである。この推察に基づいて、130
0℃を超える温度で十分に焼成したBaMg1/3 T
a2/3 O3 であらわされる難焼結性仮焼物に、少
量のMgOを積極的に添加すれば、クラック発生を抑制
しつつ、緻密度の高い焼結体とすることができるのでは
ないかと推定し、実験によってこの推定の正しいことを
確かめた結果、ここに、この発明を完成させることがで
きたのである。
[Means for Solving the Problems] In order to solve the above problems, the inventors studied BMT sintered bodies from various aspects and found the following. That is, 100
A sintered body obtained by using calcined powder calcined at about 0 to 1100°C does not have sufficient dielectric properties because of cracks, but it has sufficient density. Cracks occur because of BaCO3 and Mg that remain unreacted in the calcined product.
It was thought that this is because O and BaTa2O6 re-react during the firing process. On the other hand, it has been found that a sintered body obtained by firing a powder calcined at about 1300 to 1400° C. has no cracks but is poor in density. Therefore, as a result of a detailed study of the causes of poor density, we found that when the calcination temperature is 1300 to 1400°C, the reaction has progressed sufficiently and almost no MgO remains;
They surmised that this is because MgO remains when the temperature is between 1100°C and 1100°C. Based on this inference, 130
BaMg1/3T fully fired at a temperature above 0℃
It is estimated that if a small amount of MgO is actively added to the hard-to-sinter calcined material represented by a2/3 O3, it may be possible to suppress the occurrence of cracks and create a highly dense sintered material. However, as a result of confirming the correctness of this assumption through experiments, we were able to complete this invention.

【0007】したがって、この発明にかかる誘電体用焼
結体の製造方法は、AB1/3 C2/3 O3 であ
らわされるペロブスカイト型高周波誘電体用焼結体を得
るにあたり、AB1/3 C2/3 O3 であらわさ
れる仮焼物にB酸化物を添加して焼成するようにしてい
る。この発明におけるAB1/3 C2/3 O3 で
あらわされる仮焼物およびB酸化物のA、B、Cは下記
A、B、Cの中から適宜選んで組み合される。
Therefore, the method for manufacturing a sintered body for a dielectric according to the present invention is to obtain a sintered body for a perovskite-type high-frequency dielectric body represented by AB1/3 C2/3 O3. The B oxide is added to the calcined product represented by . In this invention, A, B, and C of the calcined product and B oxide represented by AB1/3 C2/3 O3 are appropriately selected and combined from the following A, B, and C.

【0008】A;Ba、Sr、Ba1−x Srx (
但し、0<X<1) B;Mg、Zn、Ni、Mn等 C;Ta、Nb 例えば、BMT焼結体の場合、請求項2のように、仮焼
物はBaMg1/3Ta2/3 O3 であらわされる
ものであり、B酸化物はMgOである。
A; Ba, Sr, Ba1-x Srx (
However, 0 < The B oxide is MgO.

【0009】仮焼物に加えるB酸化物の添加量は、通常
、請求項3のように、仮焼物1 molに対し、3〜8
mol %、より好ましくは、4〜6mol%の範囲と
する。3 mol%を下回ると緻密度を高める効果が十
分でない傾向がみられ、8 mol%を上回ると却って
誘電特性や緻密化の十分な焼結体が得難くなるからであ
る。なお、ペロブスカイト型高周波誘電体用焼結体を得
るための仮焼物と、添加される酸化物の組み合せとして
は、上記のBMTの場合の他、つぎのようなものも挙げ
られる。 (a)仮焼物;BaZn1/3 Ta2/3 O3 酸
化物;ZnO (b)仮焼物;BaNi1/3 Ta2/3 O3 酸
化物;NiO (c)仮焼物;BaMn1/3 Ta2/3 O3 酸
化物;MnO (d)仮焼物;BaMg1/3 Nb2/3 O3 酸
化物;MgO (e)仮焼物;BaZn1/3 Nb2/3 O3 酸
化物;ZnO (f)仮焼物;BaMn1/3 Nb2/3 O3 酸
化物;MnO (g)仮焼物;SrMg1/3 Ta2/3 O3 酸
化物;MgO (h)仮焼物;SrZn1/3 Ta2/3 O3 酸
化物;ZnO (i)仮焼物;SrNi1/3 Ta2/3 O3 酸
化物;NiO (j)仮焼物;Ba1−x Srx Mg1/3 Ta
2/3 O3 酸化物;MgO (k)仮焼物;Ba1−x Srx Ni1/3 Ta
2/3 O3 酸化物;NiO 以下、この発明を、BMT焼結体の場合を例にとって、
具体的に説明する。
[0009] The amount of B oxide added to the calcined product is usually 3 to 8 with respect to 1 mol of the calcined product.
mol %, more preferably in the range of 4 to 6 mol %. This is because if the content is less than 3 mol%, the effect of increasing density tends to be insufficient, and if it exceeds 8 mol%, it becomes difficult to obtain a sintered body with sufficient dielectric properties and densification. In addition to the above-mentioned BMT, the combination of the calcined material and the oxide added to obtain the perovskite-type sintered body for high-frequency dielectrics may include the following. (a) Calcined product; BaZn1/3 Ta2/3 O3 oxide; ZnO (b) Calcined product; BaNi1/3 Ta2/3 O3 oxide; NiO (c) Calcined product; BaMn1/3 Ta2/3 O3 oxide; MnO (d) Calcined product; BaMg1/3 Nb2/3 O3 oxide; MgO (e) Calcined product; BaZn1/3 Nb2/3 O3 oxide; ZnO (f) Calcined product; BaMn1/3 Nb2/3 O3 oxide ;MnO (g) Calcined product; SrMg1/3 Ta2/3 O3 oxide; MgO (h) Calcined product; SrZn1/3 Ta2/3 O3 oxide; ZnO (i) Calcined product; SrNi1/3 Ta2/3 O3 oxide material; NiO (j) calcined material; Ba1-x Srx Mg1/3 Ta
2/3 O3 oxide; MgO (k) calcined product; Ba1-x Srx Ni1/3 Ta
2/3 O3 oxide; NiO Hereinafter, this invention will be described using the case of a BMT sintered body as an example.
I will explain in detail.

【0010】■  BaMg1/3 Ta2/3 O3
 の化学量論比に従って、出発原料BaCO3 、Mg
OおよびTa2 O5 の粉末をそれぞれ計量する。通
常、各粉末の平均粒径は以下の程度である。 BaCO3 粉末…1 〜15μm程度MgO粉末…1
〜15μm程度 Ta2 O5 粉末…1〜15μm程度BaCO3 の
代わりにBaOを用いてもよいが、BaCO3 は高純
度で粒径の揃ったものが安価に入手できる。
■BaMg1/3 Ta2/3 O3
According to the stoichiometric ratio of starting materials BaCO3, Mg
Weigh the O and Ta2O5 powders respectively. Usually, the average particle size of each powder is of the following order. BaCO3 powder…1 ~15μm MgO powder…1
Ta2 O5 powder...approximately 1 to 15 μm BaO may be used instead of BaCO3, but BaCO3 with high purity and uniform particle size can be obtained at low cost.

【0011】■  1000〜1100℃の温度で予備
仮焼を行う。予備仮焼は、後の仮焼や本焼成の際にMg
Oが揮発するのを抑えるためである。但し、この予備仮
焼は省いてもよい。 ■  予備仮焼を終えた粉末は、冷却後、純水中で24
時間程度ボール・ミルを用い粉砕し、乾燥してから、1
300〜1400℃の温度で2〜10時間仮焼する。こ
の仮焼は、2回以上行うことが好ましい。仮焼を繰り返
すことにより組成の均一性が高まる。更に、一回の仮焼
毎に仮焼物を粉砕し攪拌するようにする。この仮焼物は
、BaMg1/3 Ta2/3O3 であらわされるも
のとなっている。最終仮焼処理の後で粉砕して得た粉末
の平均粒径は、1〜15μm程度である。
(2) Preliminary calcination is performed at a temperature of 1000 to 1100°C. Preliminary calcination is used to remove Mg during subsequent calcination and main firing.
This is to prevent O from volatilizing. However, this preliminary calcination may be omitted. ■ After pre-calcining, the powder is cooled and soaked in pure water for 24 hours.
Grind with a ball mill for about an hour, dry, and then
Calcinate at a temperature of 300-1400°C for 2-10 hours. This calcination is preferably performed two or more times. By repeating calcination, the uniformity of the composition increases. Furthermore, the calcined material is crushed and stirred every time it is calcined. This calcined product is represented by BaMg1/3 Ta2/3O3. The average particle size of the powder obtained by pulverization after the final calcination treatment is about 1 to 15 μm.

【0012】仮焼工程での反応は下記の通りである。The reaction in the calcination step is as follows.

【化1】 である。 ■  得られた仮焼物の粉末1mol に対してMgO
粉末を、αmol%(但し、0<α≦8の範囲)添加し
、加圧成形により所定形状の圧粉体にする。添加するM
gO粉末の平均粒径は、1〜15μm程度である。
[Chemical formula 1] ■ MgO per 1 mol of the obtained calcined powder
α mol % of powder (however, in the range of 0<α≦8) is added, and a green compact of a predetermined shape is formed by pressure molding. M to add
The average particle size of the gO powder is about 1 to 15 μm.

【0013】MgOは、通常、単独で用いられるが、他
の酸化物、例えば、BaTa2 O6 をも含めてもよ
い。 このように、1300℃以上の温度で仮焼したものに原
料のひとつであるMgOを少量添加するだけですむため
、極めて容易かつ安価に製造できるのである。仮焼温度
は、1300℃以上であることが望ましい。これは、原
料同士の反応が十分に進み仮焼物中に緻密化を阻害する
未反応原料物が残留することを抑えられるからである。 特に、仮焼物のX線回折分析における回折線(10・2
)、(20・2)、(21・2)、(20・4)および
(21・4)の半値幅が、それぞれ、0.20°、0.
22°、0.29°、0.33°および0.36°以下
となるように仮焼されたものは組成の均一性が高くQ値
が十分となる傾向にある。
[0013] MgO is usually used alone, but other oxides such as BaTa2 O6 may also be included. In this way, it is only necessary to add a small amount of MgO, which is one of the raw materials, to the product calcined at a temperature of 1300° C. or higher, so it can be produced extremely easily and at low cost. The calcination temperature is preferably 1300°C or higher. This is because the reaction between the raw materials progresses sufficiently and it is possible to prevent unreacted raw materials from remaining in the calcined product, which inhibits densification. In particular, the diffraction line (10.2
), (20・2), (21・2), (20・4), and (21・4) have half widths of 0.20° and 0.20°, respectively.
Those calcined to angles of 22°, 0.29°, 0.33°, and 0.36° or less tend to have high compositional uniformity and a sufficient Q value.

【0014】■  この後、本焼成を行う。 (1)  1500℃以上の温度で2〜5時間焼成する
。 昇温速度には特に制限はない。この(1)の焼成は、緻
密化を進行させるためのものである。ついで、(2) 
 1200〜1450℃で10〜120時間熱処理する
。この(2)の処理は、BMT結晶を理想的な六方晶と
するためになされる。
[0014] After this, main firing is performed. (1) Baking at a temperature of 1500°C or higher for 2 to 5 hours. There is no particular restriction on the heating rate. This firing (1) is for advancing densification. Next, (2)
Heat treatment is performed at 1200 to 1450°C for 10 to 120 hours. This treatment (2) is performed to make the BMT crystal into an ideal hexagonal crystal.

【0015】これにより、優れたBMT焼結体が容易に
得られるようになる。
[0015] This makes it possible to easily obtain an excellent BMT sintered body.

【0016】[0016]

【作用】この発明では、本焼成において添加されるB酸
化物は、AB1/3C2/3 O3 であらわされる仮
焼物に対し焼結を促す作用を発揮するため、クラックの
ない緻密な焼結体が確実に(歩留まりよく)得られる。 少量添加するB酸化物は、通常、仮焼物を作る際の原料
であって格別なものではなく、また、急速昇温焼成など
の特殊な処理の必要もないので、製造は容易であってコ
スト高を招来するようなこともない。
[Function] In this invention, the B oxide added in the main firing has the effect of promoting sintering of the calcined material represented by AB1/3C2/3 O3, so that a dense sintered body without cracks is produced. It can be obtained reliably (with high yield). B oxide, which is added in small amounts, is usually a raw material for making calcined products and is not special, and there is no need for special treatment such as rapid heating firing, so manufacturing is easy and low cost. There is no such thing as inducing high school.

【0017】ペロブスカイト型高周波誘電体用焼結体が
BaMg1/3 Ta2/3 O3 であらわされるも
のである場合は、他の組成のものの場合に比べ、誘電特
性の優れたものが得やすい。B酸化物の添加量がAB1
/3 C2/3 O3 であらわされる仮焼物1mol
 に対し3〜8mol %である場合には、適切な焼結
促進作用が確実にあらわれる。
When the perovskite-type sintered body for high-frequency dielectric material is represented by BaMg1/3 Ta2/3 O3, it is easier to obtain one with excellent dielectric properties compared to the case of other compositions. The amount of B oxide added is AB1
1 mol of calcined material expressed as /3 C2/3 O3
When the amount is 3 to 8 mol %, an appropriate sintering promotion effect is reliably exhibited.

【0018】[0018]

【実施例】以下、この発明の実施例を説明する。 −実施例1〜5− 上記■〜■に従って、BMT焼結体を得た。但し、仮焼
物1mol に対するMgOの添加割合は、表1の通り
とした。
[Embodiments] Examples of the present invention will be described below. -Examples 1 to 5- BMT sintered bodies were obtained according to the above-mentioned procedures. However, the addition ratio of MgO to 1 mol of calcined material was as shown in Table 1.

【0019】なお、■予備仮焼工程では、1100℃、
10時間の処理を行い、■仮焼工程では、1300℃、
10時間の処理を2回行い、■本焼成の(1)焼成工程
では、1600℃、2時間の焼成を行い、(2)焼成工
程では、1450℃、100時間の処理を行った。なお
、原料粉末の平均粒径は、BaCO3粉末が約4μm、
MgO粉末が約4μm、Ta2 O5 粉末が約4μm
である。
[0019] In addition, in the preliminary calcination step (1), the temperature is 1100°C,
Treatment was carried out for 10 hours, and in the calcination step, the temperature was 1300℃
The 10-hour treatment was performed twice, and the (1) firing step of (1) main firing was performed at 1600° C. for 2 hours, and the (2) firing step was performed at 1450° C. for 100 hours. The average particle size of the raw material powder is approximately 4 μm for BaCO3 powder,
MgO powder is about 4μm, Ta2O5 powder is about 4μm
It is.

【0020】粉砕後における仮焼物の粉末の平均粒径は
約4μmであり、添加するMgO粉末の平均粒径も約4
μmである。 −比較例1− 実施例1において、MgOを添加しなかった他は、同様
にしてBMT焼結体を得た。
The average particle size of the calcined powder after pulverization is about 4 μm, and the average particle size of the MgO powder added is also about 4 μm.
It is μm. - Comparative Example 1 - A BMT sintered body was obtained in the same manner as in Example 1, except that MgO was not added.

【0021】−比較例2− 仮焼温度が1100℃である他は比較例1と同様にして
、BMT焼結体を得た。実施例および比較例の焼結体に
ついて、緻密度(焼結体の相対密度)を測定するととも
に、誘電率とQ値を誘電体円柱共振法により測定(測定
周波数10G  Hz)した。また、クラックの有無に
ついても調べた。測定結果を表1に示す。
-Comparative Example 2- A BMT sintered body was obtained in the same manner as in Comparative Example 1 except that the calcination temperature was 1100°C. Regarding the sintered bodies of Examples and Comparative Examples, the compactness (relative density of the sintered bodies) was measured, and the dielectric constant and Q value were also measured by the dielectric cylinder resonance method (measurement frequency: 10 GHz). The presence or absence of cracks was also investigated. The measurement results are shown in Table 1.

【0022】[0022]

【表1】[Table 1]

【0023】表1の実施例の各焼結体と比較例1、2の
焼結体と比べれば、実施例の焼結体は、緻密であり、ク
ラックもなく、十分に実用に足る誘電特性をもつ誘電体
であることが分かる。
Comparing the sintered bodies of the examples in Table 1 and the sintered bodies of Comparative Examples 1 and 2, the sintered bodies of the examples are dense, have no cracks, and have dielectric properties sufficient for practical use. It can be seen that it is a dielectric material with .

【0024】[0024]

【発明の効果】以上に述べたように、請求項1〜3記載
の発明では、AB1/3 C2/3 O3 であらわさ
れる仮焼物に焼結促進作用をもつB酸化物を微量添加す
ればよいだけであるため、優れた高周波誘電特性の安価
な焼結体を容易に得ることができる。請求項2記載の発
明では、ペロブスカイト型高周波誘電体用焼結体の組成
がBaMg1/3 Ta2/3 O3 であるため、誘
電特性が顕著に優れており、より実用性が高い。
Effects of the Invention As described above, in the invention according to claims 1 to 3, it is sufficient to add a small amount of B oxide having a sintering promoting effect to the calcined material represented by AB1/3 C2/3 O3. Therefore, an inexpensive sintered body with excellent high-frequency dielectric properties can be easily obtained. In the invention as claimed in claim 2, since the composition of the perovskite-type sintered body for high-frequency dielectric is BaMg1/3 Ta2/3 O3, the dielectric properties are significantly excellent and the practicality is higher.

【0025】請求項3記載の発明では、B酸化物の添加
量が3〜8 mol%であるため、適切な焼結促進作用
が確実にあらわれる。
In the third aspect of the invention, since the amount of B oxide added is 3 to 8 mol %, an appropriate sintering promoting effect is reliably exerted.

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】  AB1/3 C2/3 O3 であら
わされるペロブスカイト型高周波誘電体用焼結体を得る
にあたり、AB1/3 C2/3 O3 であらわされ
る仮焼物にB酸化物を添加して焼成するようにすること
を特徴とする高周波誘電体用焼結体の製造方法。
[Claim 1] To obtain a perovskite-type sintered body for high-frequency dielectrics represented by AB1/3 C2/3 O3, B oxide is added to a calcined material represented by AB1/3 C2/3 O3 and fired. A method of manufacturing a sintered body for high frequency dielectric material, characterized in that:
【請求項2】  仮焼物がBaMg1/3 Ta2/3
 O3 であらわされるものであり、添加酸化物がMg
Oである請求項1記載の高周波誘電体用焼結体の製造方
法。
[Claim 2] The calcined product is BaMg1/3 Ta2/3
O3, and the added oxide is Mg
2. The method for producing a sintered body for high frequency dielectric material according to claim 1, wherein the sintered body is O.
【請求項3】  AB1/3 C2/3 O3 であら
わされる仮焼物1mol に対しB酸化物を3〜8mo
l %の割合で添加するようにする請求項1または2記
載の高周波誘電体用焼結体の製造方法。
[Claim 3] 3 to 8 mo of B oxide per 1 mol of calcined material expressed as AB1/3 C2/3 O3
3. The method for producing a sintered body for high frequency dielectric material according to claim 1 or 2, wherein the addition amount is 1%.
JP2404558A 1990-12-20 1990-12-20 Method for manufacturing sintered body for high frequency dielectric Expired - Lifetime JPH0817053B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2404558A JPH0817053B2 (en) 1990-12-20 1990-12-20 Method for manufacturing sintered body for high frequency dielectric

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2404558A JPH0817053B2 (en) 1990-12-20 1990-12-20 Method for manufacturing sintered body for high frequency dielectric

Publications (2)

Publication Number Publication Date
JPH04220905A true JPH04220905A (en) 1992-08-11
JPH0817053B2 JPH0817053B2 (en) 1996-02-21

Family

ID=18514219

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
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* Cited by examiner, † Cited by third party
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KR100487204B1 (en) * 2001-08-30 2005-05-03 (주)에어링크테크놀로지 Microwave dielectric ceramic composition and method for manufacturing the same
CN109437899A (en) * 2018-12-20 2019-03-08 中国科学院上海硅酸盐研究所 A kind of microwave medium ceramic material with ultrahigh Q-value and preparation method thereof
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CN110483042A (en) * 2018-05-15 2019-11-22 中国科学院上海硅酸盐研究所 A kind of novel single phase microwave dielectric ceramic material and preparation method thereof

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100487204B1 (en) * 2001-08-30 2005-05-03 (주)에어링크테크놀로지 Microwave dielectric ceramic composition and method for manufacturing the same
CN110407579A (en) * 2018-04-28 2019-11-05 中国科学院上海硅酸盐研究所 One kind having ultrahigh Q-value microwave dielectric material and preparation method thereof
CN110483042A (en) * 2018-05-15 2019-11-22 中国科学院上海硅酸盐研究所 A kind of novel single phase microwave dielectric ceramic material and preparation method thereof
CN110483042B (en) * 2018-05-15 2021-11-02 中国科学院上海硅酸盐研究所 Novel single-phase microwave dielectric ceramic material and preparation method thereof
CN109437899A (en) * 2018-12-20 2019-03-08 中国科学院上海硅酸盐研究所 A kind of microwave medium ceramic material with ultrahigh Q-value and preparation method thereof

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