JPH04218524A - Production of electrically conductive resin paste and semiconductor device - Google Patents
Production of electrically conductive resin paste and semiconductor deviceInfo
- Publication number
- JPH04218524A JPH04218524A JP8373691A JP8373691A JPH04218524A JP H04218524 A JPH04218524 A JP H04218524A JP 8373691 A JP8373691 A JP 8373691A JP 8373691 A JP8373691 A JP 8373691A JP H04218524 A JPH04218524 A JP H04218524A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- epoxy resin
- paste
- manufactured
- type epoxy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229920005989 resin Polymers 0.000 title claims abstract description 44
- 239000011347 resin Substances 0.000 title claims abstract description 44
- 239000004065 semiconductor Substances 0.000 title claims abstract description 19
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 239000003822 epoxy resin Substances 0.000 claims abstract description 30
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 30
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229920003986 novolac Polymers 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 19
- 239000003085 diluting agent Substances 0.000 claims abstract description 13
- -1 silane compound Chemical class 0.000 claims abstract description 12
- 239000000843 powder Substances 0.000 claims abstract description 9
- 229910000077 silane Inorganic materials 0.000 claims abstract description 6
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 claims abstract description 5
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 150000001642 boronic acid derivatives Chemical class 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract description 6
- 238000002156 mixing Methods 0.000 abstract description 6
- 239000000203 mixture Substances 0.000 abstract description 5
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 abstract description 5
- 239000002966 varnish Substances 0.000 abstract description 5
- 238000010438 heat treatment Methods 0.000 abstract description 4
- 239000003795 chemical substances by application Substances 0.000 abstract description 3
- 238000004898 kneading Methods 0.000 abstract description 2
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 abstract 1
- 230000002542 deteriorative effect Effects 0.000 abstract 1
- USFPINLPPFWTJW-UHFFFAOYSA-N tetraphenylphosphonium Chemical compound C1=CC=CC=C1[P+](C=1C=CC=CC=1)(C=1C=CC=CC=1)C1=CC=CC=C1 USFPINLPPFWTJW-UHFFFAOYSA-N 0.000 abstract 1
- 239000000853 adhesive Substances 0.000 description 10
- 230000001070 adhesive effect Effects 0.000 description 10
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 239000004593 Epoxy Substances 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 239000011888 foil Substances 0.000 description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- URLKBWYHVLBVBO-UHFFFAOYSA-N Para-Xylene Chemical group CC1=CC=C(C)C=C1 URLKBWYHVLBVBO-UHFFFAOYSA-N 0.000 description 2
- FQYUMYWMJTYZTK-UHFFFAOYSA-N Phenyl glycidyl ether Chemical compound C1OC1COC1=CC=CC=C1 FQYUMYWMJTYZTK-UHFFFAOYSA-N 0.000 description 2
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000007822 coupling agent Substances 0.000 description 2
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 2
- 125000003700 epoxy group Chemical group 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- ZFSLODLOARCGLH-UHFFFAOYSA-N isocyanuric acid Chemical compound OC1=NC(O)=NC(O)=N1 ZFSLODLOARCGLH-UHFFFAOYSA-N 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- WUOACPNHFRMFPN-SECBINFHSA-N (S)-(-)-alpha-terpineol Chemical compound CC1=CC[C@@H](C(C)(C)O)CC1 WUOACPNHFRMFPN-SECBINFHSA-N 0.000 description 1
- NJPAJFFEXRMGDR-UHFFFAOYSA-N 1,2,3,4,8,9,10,10a-octahydropyrimido[1,2-a]azepine;benzo[a]anthracen-7-yloxyboronic acid Chemical compound C1CCC=CN2CCCNC21.C1=CC2=CC=CC=C2C2=C1C(OB(O)O)=C(C=CC=C1)C1=C2 NJPAJFFEXRMGDR-UHFFFAOYSA-N 0.000 description 1
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 1
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 description 1
- CUFXMPWHOWYNSO-UHFFFAOYSA-N 2-[(4-methylphenoxy)methyl]oxirane Chemical compound C1=CC(C)=CC=C1OCC1OC1 CUFXMPWHOWYNSO-UHFFFAOYSA-N 0.000 description 1
- HHRACYLRBOUBKM-UHFFFAOYSA-N 2-[(4-tert-butylphenoxy)methyl]oxirane Chemical compound C1=CC(C(C)(C)C)=CC=C1OCC1OC1 HHRACYLRBOUBKM-UHFFFAOYSA-N 0.000 description 1
- HPILSDOMLLYBQF-UHFFFAOYSA-N 2-[1-(oxiran-2-ylmethoxy)butoxymethyl]oxirane Chemical compound C1OC1COC(CCC)OCC1CO1 HPILSDOMLLYBQF-UHFFFAOYSA-N 0.000 description 1
- NQBXSWAWVZHKBZ-UHFFFAOYSA-N 2-butoxyethyl acetate Chemical compound CCCCOCCOC(C)=O NQBXSWAWVZHKBZ-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 2-phenyl-1h-imidazole Chemical compound C1=CNC(C=2C=CC=CC=2)=N1 ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 0.000 description 1
- VPWNQTHUCYMVMZ-UHFFFAOYSA-N 4,4'-sulfonyldiphenol Chemical compound C1=CC(O)=CC=C1S(=O)(=O)C1=CC=C(O)C=C1 VPWNQTHUCYMVMZ-UHFFFAOYSA-N 0.000 description 1
- 229910015365 Au—Si Inorganic materials 0.000 description 1
- 229930185605 Bisphenol Natural products 0.000 description 1
- BRLQWZUYTZBJKN-UHFFFAOYSA-N Epichlorohydrin Chemical compound ClCC1CO1 BRLQWZUYTZBJKN-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 238000005727 Friedel-Crafts reaction Methods 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- OVKDFILSBMEKLT-UHFFFAOYSA-N alpha-Terpineol Natural products CC(=C)C1(O)CCC(C)=CC1 OVKDFILSBMEKLT-UHFFFAOYSA-N 0.000 description 1
- 229940088601 alpha-terpineol Drugs 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000001808 coupling effect Effects 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- OTARVPUIYXHRRB-UHFFFAOYSA-N diethoxy-methyl-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCO[Si](C)(OCC)CCCOCC1CO1 OTARVPUIYXHRRB-UHFFFAOYSA-N 0.000 description 1
- GYZLOYUZLJXAJU-UHFFFAOYSA-N diglycidyl ether Chemical compound C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 description 1
- WHGNXNCOTZPEEK-UHFFFAOYSA-N dimethoxy-methyl-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](C)(OC)CCCOCC1CO1 WHGNXNCOTZPEEK-UHFFFAOYSA-N 0.000 description 1
- OYWALDPIZVWXIM-UHFFFAOYSA-N dimethyl-[3-(oxiran-2-ylmethoxy)propyl]-trimethylsilyloxysilane Chemical compound C[Si](C)(C)O[Si](C)(C)CCCOCC1CO1 OYWALDPIZVWXIM-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- HHBOIIOOTUCYQD-UHFFFAOYSA-N ethoxy-dimethyl-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCO[Si](C)(C)CCCOCC1CO1 HHBOIIOOTUCYQD-UHFFFAOYSA-N 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- AYEKOFBPNLCAJY-UHFFFAOYSA-O thiamine pyrophosphate Chemical compound CC1=C(CCOP(O)(=O)OP(O)(O)=O)SC=[N+]1CC1=CN=C(C)N=C1N AYEKOFBPNLCAJY-UHFFFAOYSA-O 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Landscapes
- Compositions Of Macromolecular Compounds (AREA)
- Epoxy Resins (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Die Bonding (AREA)
- Conductive Materials (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は導電性樹脂ペースト、さ
らに詳しくは半導体素子を支持部材に接合させるのに好
適な導電性樹脂ペーストおよびこれを用いた半導体装置
の製造法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a conductive resin paste, and more particularly to a conductive resin paste suitable for bonding a semiconductor element to a support member, and a method for manufacturing a semiconductor device using the same.
【０００２】0002
【従来の技術】従来、半導体素子をリードフレーム等の
支持部材に接合させる方法として、（１）Ａｕ−Ｓｉ共
晶法、（２）半田法、（３）樹脂ペースト法などが知ら
れている。しかし、（１）の方法では金を用いるため、
コスト高となり、また作業温度も約４００℃と高い欠点
がある。（２）の方法は（１）に較べると割安であるが
、半導体素子裏面に金の薄膜を設ける必要があり、金の
薄膜形成にコストがかかる等の欠点がある。（３）の方
法は、エポキシ樹脂またはポリイミド樹脂のベースレジ
ンに銀粉をフィラーとして混合させた樹脂ペーストを用
いるものであり、上記（１）および（２）の方法より安
価な方法であり、また２００℃以下の温度で使用できる
等の利点があるため、現在ではこの樹脂ペースト法が主
流となってきている。[Prior Art] Conventionally, known methods for bonding semiconductor elements to support members such as lead frames include (1) Au-Si eutectic method, (2) soldering method, and (3) resin paste method. . However, since method (1) uses gold,
It has the drawbacks of high cost and high working temperature of approximately 400°C. Method (2) is cheaper than method (1), but has drawbacks such as the need to provide a thin gold film on the back surface of the semiconductor element, which increases the cost of forming the thin gold film. Method (3) uses a resin paste made by mixing silver powder as a filler into a base resin of epoxy resin or polyimide resin, and is a cheaper method than methods (1) and (2) above. Currently, this resin paste method has become mainstream because it has advantages such as being able to be used at temperatures below ℃.
【０００３】0003
【発明が解決しようとする課題】しかしながら、従来の
樹脂ペーストは、１５０〜２００℃のオーブンで１〜２
時間加熱して硬化する必要があるため、半導体組立工程
のインライン化による合理化がしにくい欠点があった。
また１分以内での硬化を可能にした場合には、シェルフ
ライフが短く、接着強度、特に２００〜３５０℃に加熱
したときの熱時接着強度が低く、またボイドの発生が多
い等の問題があった。[Problems to be Solved by the Invention] However, conventional resin pastes cannot be heated for 1 to 2 hours in an oven at 150 to 200°C.
Because it requires heating for a long time to cure, it has the drawback that it is difficult to rationalize the semiconductor assembly process by in-line. In addition, when curing is enabled within 1 minute, there are problems such as short shelf life, low adhesive strength, especially when heated to 200 to 350°C, and frequent occurrence of voids. there were.
【０００４】本発明の目的は、上記従来技術の問題点を
解決し、２００〜３５０℃で加熱したときの接着強度お
よび作業性に優れた導電性樹脂ペーストおよびこれを用
いた半導体装置の製造法を提供することにある。An object of the present invention is to solve the above-mentioned problems of the prior art and to provide a conductive resin paste that has excellent adhesive strength and workability when heated at 200 to 350°C, and a method for manufacturing a semiconductor device using the same. Our goal is to provide the following.
【０００５】[0005]
【課題を解決するための手段】本発明は、（Ａ）フェノ
ールノボラック型エポキシ樹脂およびエピ・ビス型エポ
キシ樹脂からなる混合エポキシ樹脂、（Ｂ）フェノール
ノボラック樹脂および／またはフェノールアラルキル樹
脂、（Ｃ）有機ボレート塩、（Ｄ）グリシジル基を１個
有するシラン化合物を少なくとも１成分として含む希釈
剤ならびに（Ｅ）導電性金属粉を含有してなる導電性樹
脂ペーストおよびこれを用いた半導体装置の製造法に関
する。[Means for Solving the Problems] The present invention provides (A) a mixed epoxy resin consisting of a phenol novolak type epoxy resin and an epi-bis type epoxy resin, (B) a phenol novolak resin and/or a phenol aralkyl resin, (C) A conductive resin paste containing an organic borate salt, (D) a diluent containing as at least one component a silane compound having one glycidyl group, and (E) conductive metal powder, and a method for manufacturing a semiconductor device using the same. Regarding.
【０００６】本発明に用いられる混合エポキシ樹脂（Ａ
）は、フェノールノボラック型エポキシ樹脂とエピ・ビ
ス型エポキシ樹脂の混合物であり、これらの混合割合は
、耐熱性および接着強度の点から、重量比（フェノール
ノボラック型エポキシ樹脂／エピ・ビス型エポキシ樹脂
）で２０／８０〜９５／５の範囲が好ましい。Mixed epoxy resin (A
) is a mixture of phenol novolac type epoxy resin and epi-bis type epoxy resin, and the mixing ratio of these is determined by the weight ratio (phenol novolac type epoxy resin / epi-bis type epoxy resin) from the viewpoint of heat resistance and adhesive strength. ) is preferably in the range of 20/80 to 95/5.
【０００７】フェノールノボラック型エポキシ樹脂は、
フェノールノボラック樹脂またはクレゾールノボラック
樹脂のグリシジルエーテルであり、例えばダウケミカル
社製商品名ＤＥＮ−４３８、東都化成社製商品名ＹＤＣ
Ｎ−７０１、７０２などが挙げられる。[0007] Phenol novolac type epoxy resin is
Glycidyl ether of phenol novolac resin or cresol novolac resin, such as DEN-438 (trade name, manufactured by Dow Chemical Company), YDC (trade name, manufactured by Toto Kasei Co., Ltd.)
Examples include N-701 and 702.
【０００８】エピ・ビス型エポキシ樹脂は、ビスフェノ
ールＡ、ビスフェノールＡＤ、ビスフェノールＦ、ビス
フェノールＳ、アルキル化ビスフェノールＡまたはハロ
ゲン化ビスフェノールＡとエピクロロヒドリンとの縮合
物であり、例えば油化シェルエポキシ社製商品名ＥＰ−
８２８、ＥＰ−１００１、ＥＰ−１００４、東都化成社
製商品名ＹＤＦ−１７０、ＹＤＢ−３４０、三井石油化
学社製商品名Ｒ−７１０などが挙げられる。Epi-bis type epoxy resin is a condensate of bisphenol A, bisphenol AD, bisphenol F, bisphenol S, alkylated bisphenol A or halogenated bisphenol A and epichlorohydrin, and is manufactured by Yuka Shell Epoxy Co., Ltd. Product name EP-
828, EP-1001, EP-1004, Toto Kasei Co., Ltd. product name YDF-170, YDB-340, Mitsui Petrochemical Co., Ltd. product name R-710, and the like.
【０００９】本発明に用いられるフェノールノボラック
樹脂（Ｂ）はエポキシ樹脂の主硬化剤として用いられ、
例えば明和化成社製商品名Ｈ−１、日立化成社製商品名
Ｈｐ−６０７Ｎなどが挙げられる。本発明に用いられる
フェノールアラルキル樹脂は、α、α′−ジメトキシ−
ｐ−キシレンとフェノールモノマをフリーデルクラフツ
触媒で重縮合させて得られる樹脂であり、上記エポキシ
樹脂の硬化剤として用いられる。この市販品としては三
井東圧化学社製商品名ＸＬ−２２５、アルブライトアン
ドウィルソン社製商品名ＸＹＬＯＫ−２２５などが挙げ
られる。フェノールノボラック樹脂および／またはフェ
ノールアラルキル樹脂（Ｂ）の配合量は、硬化性および
硬化物特性の点から、混合エポキシ樹脂（Ａ）のエポキ
シ基１当量に対してフェノールノボラック樹脂および／
またはフェノールアラルキル樹脂（Ｂ）の水酸基が０．
６〜１．５当量の範囲となるように用いるのが好ましい
。The phenol novolac resin (B) used in the present invention is used as a main curing agent for epoxy resin,
For example, the product name H-1 manufactured by Meiwa Kasei Co., Ltd. and the product name Hp-607N manufactured by Hitachi Chemical Co., Ltd. are listed. The phenol aralkyl resin used in the present invention is α,α′-dimethoxy-
It is a resin obtained by polycondensing p-xylene and a phenol monomer using a Friedel-Crafts catalyst, and is used as a curing agent for the above-mentioned epoxy resin. Examples of the commercially available products include XL-225 (trade name) manufactured by Mitsui Toatsu Chemical Co., Ltd. and XYLOK-225 (trade name) manufactured by Albright & Wilson. The blending amount of the phenol novolak resin and/or phenol aralkyl resin (B) is determined based on 1 equivalent of epoxy group of the mixed epoxy resin (A) from the viewpoint of curability and properties of the cured product.
Or, the hydroxyl group of the phenol aralkyl resin (B) is 0.
It is preferable to use it in an amount of 6 to 1.5 equivalents.
【００１０】本発明で用いられる有機ボレート塩（Ｃ）
は硬化促進剤として用いられ、例えばテトラフェニルホ
スホニウム・テトラフェニルボレート塩（北興化学社製
）、１，８−ジアザビシクロ（５，４，０）ウンデセン
−７・テトラフェニルボレート塩（サンアプロ社製）、
２−エチル−４−メチルイミダゾール・テトラフェニル
ボレート塩（北興化学社製）が挙げられる。有機ボレー
ト塩（Ｃ）の配合量は、硬化性および保存安定性の点か
ら、混合エポキシ樹脂（Ａ）とフェノールノボラック樹
脂および／またはフェノールアラルキル樹脂（Ｂ）の総
量１００重量部に対して０．１〜３０重量部とするのが
好ましい。Organic borate salt (C) used in the present invention
are used as curing accelerators, such as tetraphenylphosphonium tetraphenylborate salt (manufactured by Hokko Chemical Co., Ltd.), 1,8-diazabicyclo(5,4,0) undecene-7 tetraphenylborate salt (manufactured by San-Apro Co., Ltd.),
2-ethyl-4-methylimidazole tetraphenylborate salt (manufactured by Hokko Chemical Co., Ltd.) is mentioned. From the viewpoint of curability and storage stability, the amount of the organic borate salt (C) is 0.00 parts by weight based on 100 parts by weight of the mixed epoxy resin (A) and the phenol novolak resin and/or phenol aralkyl resin (B). The amount is preferably 1 to 30 parts by weight.
【００１１】本発明で用いられる希釈剤（Ｄ）は、その
１成分としてグリシジル基を１個有するシラン化合物を
含む。このシラン化合物としては、例えばγ−グリシド
キシプロピルトリメトキシシラン（信越化学製 ＫＢ
Ｍ−４０３）、γ−グリシドキシプロピルメチルジメト
キシシラン（東芝シリコーン製 ＴＳＬ−８３５５）
、γ−グリシドキシプロピルペンタメチルジシロキサン
（東芝シリコーン製 ＴＳＬ−９９０５）、γ−グリ
シドキシプロピルメチルジエトキシシラン（チッソ製）
、γ−グリシドキシプロピルジメチルエトキシシラン（
チッソ製）、（γ−グリシドキシプロピル）−ビス−（
トリメチルシロキシ）メチルシラン（チッソ製）などが
挙げられ、その含有量は、接着強度の点から、希釈剤（
Ｄ）の総量に対して２０〜１００重量％とするのが好ま
しい。The diluent (D) used in the present invention contains as one component a silane compound having one glycidyl group. As this silane compound, for example, γ-glycidoxypropyltrimethoxysilane (KB manufactured by Shin-Etsu Chemical Co., Ltd.
M-403), γ-glycidoxypropylmethyldimethoxysilane (TSL-8355 manufactured by Toshiba Silicone)
, γ-glycidoxypropylpentamethyldisiloxane (TSL-9905 manufactured by Toshiba Silicone), γ-glycidoxypropylmethyldiethoxysilane (manufactured by Chisso)
, γ-glycidoxypropyldimethylethoxysilane (
(manufactured by Chisso), (γ-glycidoxypropyl)-bis-(
trimethylsiloxy) methylsilane (manufactured by Chisso), and its content is determined by diluent (
It is preferably 20 to 100% by weight based on the total amount of D).
【００１２】シラン化合物以外の希釈剤としては、例え
ばエチルセロソルブ、ブチルセロソルブ、セロソルブア
セテート、ブチルセロソルブアセテート、エチルカルビ
トール、エチルカルビトールアセテート、ブチルカルビ
トール、ブチルカルビトールアセテート、α−テルピネ
オールなどの沸点が１００℃以上の有機溶剤、フェニル
グリシジルエーテル、クレジルグリシジルエーテル、ｐ
−（ｔ−ブチル）フェニルグリシジルエーテル、ｐ−（
ｓｅｃ−ブチル）フェニルグリシジルエーテル、ブタン
ジオールジグリシジルエーテルなどの１分子中にエポキ
シ基を１〜２個有する反応性希釈剤等が用いられる。Examples of diluents other than silane compounds include ethyl cellosolve, butyl cellosolve, cellosolve acetate, butyl cellosolve acetate, ethyl carbitol, ethyl carbitol acetate, butyl carbitol, butyl carbitol acetate, and α-terpineol, which have a boiling point of 100 Organic solvents above ℃, phenyl glycidyl ether, cresyl glycidyl ether, p
-(t-butyl)phenyl glycidyl ether, p-(
Reactive diluents having 1 to 2 epoxy groups in one molecule, such as sec-butyl) phenyl glycidyl ether and butanediol diglycidyl ether, are used.
【００１３】希釈剤（Ｄ）は、導電性樹脂ペーストの粘
度を調整し、作業性を改善するために用いられるが、上
記シラン化合物の使用によりカップリング効果を付与す
るとともに２００〜３５０℃における導電性樹脂ペース
ト硬化物の熱時接着強さを向上することができる。これ
らの希釈剤の配合量は、作業性および導電性樹脂ペース
トの安定性の点から、混合エポキシ樹脂（Ａ）とフェノ
ールノボラック樹脂および／またはフェノールアラルキ
ル樹脂（Ｂ）の総量１００重量部に対して５〜８００重
量部とするのが好ましい。The diluent (D) is used to adjust the viscosity of the conductive resin paste and improve workability, and the use of the silane compound imparts a coupling effect and improves conductivity at 200 to 350°C. The heat adhesion strength of the cured resin paste can be improved. From the viewpoint of workability and stability of the conductive resin paste, the blending amount of these diluents is determined based on 100 parts by weight of the total amount of mixed epoxy resin (A) and phenol novolak resin and/or phenol aralkyl resin (B). It is preferably 5 to 800 parts by weight.
【００１４】本発明に用いられる導電性金属粉（Ｅ）は
、導電性樹脂ペーストに導電性を付与するものであり、
銀、金、銅、ニッケル、鉄、ステンレスなどの導電性粉
体が用いられる。例えば、銀粉としては徳力化学社製商
品名ＴＣＧ−１、金粉としては徳力化学社製商品名ＴＡ
−１、銅粉としては福田金属箔粉社製商品名ＣＥ−１１
５、ニッケル粉としてはインコ社製商品名Ｔｙｐｅ−１
２３、鉄粉としては福田金属箔粉社製商品名Ｆｅ−Ｓ−
１００、ステンレス粉としては福田金属箔粉社製商品名
ＳＵＳ３０４Ｌがある。これらのうち耐酸化性および導
電性の点から銀が好ましい。該導電性金属粉（Ｅ）の配
合量は、混合エポキシ樹脂（Ａ）およびフェノールノボ
ラック樹脂および／またはフェノールアラルキル樹脂（
Ｂ）の総量１００重量部に対して１００〜１０００重量
部の範囲が好ましい。The conductive metal powder (E) used in the present invention imparts conductivity to the conductive resin paste,
Conductive powders of silver, gold, copper, nickel, iron, stainless steel, etc. are used. For example, the silver powder is manufactured by Tokuriki Chemical Co., Ltd. under the trade name TCG-1, and the gold powder is manufactured by Tokuriki Chemical Company under the trade name TA.
-1, Copper powder is manufactured by Fukuda Metal Foil Powder Co., Ltd., product name CE-11
5. As the nickel powder, Inco's product name Type-1
23. As iron powder, product name Fe-S- manufactured by Fukuda Metal Foil Powder Co., Ltd.
100, and the stainless steel powder is SUS304L, a trade name manufactured by Fukuda Metal Foil and Powder Co., Ltd. Among these, silver is preferred from the viewpoint of oxidation resistance and conductivity. The amount of the conductive metal powder (E) is determined by mixing the mixed epoxy resin (A) and the phenol novolac resin and/or the phenol aralkyl resin (
It is preferably in the range of 100 to 1000 parts by weight based on 100 parts by weight of the total amount of B).
【００１５】本発明になる導電性樹脂ペーストには、シ
ランカップリング剤、チタンカップリング剤等の接着力
向上剤、ノニオン系界面活性剤、フッ素系界面活性剤な
どの濡れ向上剤、シリコーン油などの消泡剤を適宜加え
ることができる。The conductive resin paste of the present invention may contain adhesion improvers such as silane coupling agents and titanium coupling agents, wetting improvers such as nonionic surfactants and fluorine surfactants, silicone oil, etc. An antifoaming agent can be added as appropriate.
【００１６】本発明になる導電性樹脂ペーストは、例え
ば、フェノールノボラック型エポキシ樹脂、エピ・ビス
型エポキシ樹脂およびフェノールノボラック樹脂および
／またはフェノールアラルキル樹脂の所定量を一括また
は分割して希釈剤の所定量と混合し、必要に応じて加熱
しながら混合、撹拌して溶解させ、得られたワニスの所
定量と硬化促進剤、希釈剤、導電性金属粉および必要に
応じて添加されるカップリング剤等の添加剤を一括また
は分割して加え、撹拌器、らいかい器、３本ロール、ボ
ールミルなどの分散機を適宜組合わせて混練または溶解
して作製することができる。The conductive resin paste of the present invention can be prepared by adding a predetermined amount of a phenol novolac type epoxy resin, an epi-bis type epoxy resin, a phenol novolac resin and/or a phenol aralkyl resin all at once or in portions to a diluent. A fixed amount of varnish is mixed, stirred and dissolved while heating as necessary, and a predetermined amount of the obtained varnish, a curing accelerator, a diluent, a conductive metal powder, and a coupling agent added as necessary are added. It can be prepared by adding additives such as the following at once or in portions, and kneading or dissolving the mixture using an appropriate combination of dispersers such as a stirrer, a sieve, a three-roll mill, and a ball mill.
【００１７】本発明になる導電性樹脂ペーストを用いて
半導体素子を支持部材に接合させて半導体装置とされる
。例えば、本発明になる導電性樹脂ペーストを支持部材
に塗布し、この上に半導体素子を置いて圧着し加熱して
このペーストを硬化させて半導体素子を支持部材に接合
させて半導体装置とする。A semiconductor device is manufactured by bonding a semiconductor element to a support member using the conductive resin paste of the present invention. For example, a conductive resin paste according to the present invention is applied to a support member, a semiconductor element is placed thereon, pressure-bonded, and heated to harden the paste and bond the semiconductor element to the support member to form a semiconductor device.
【００１８】本発明になる導電性樹脂ペーストは、ＩＣ
、ＬＳＩ等の半導体素子のリードフレーム、セラミック
配線板、ガラスエポキシ配線板等の支持部材への接合、
タンタルコンデンサチップのリードフレームへの接合等
の接合材料として好適である。The conductive resin paste of the present invention is suitable for IC
, bonding of semiconductor elements such as LSI to support members such as lead frames, ceramic wiring boards, glass epoxy wiring boards, etc.
It is suitable as a bonding material for bonding tantalum capacitor chips to lead frames, etc.
【００１９】[0019]
【実施例】以下、本発明を実施例により説明する。実施
例１〜９および比較例１〜４表１に示すそれぞれの組成
のＤＥＮ−４３８、ＥＰ−１００１、Ｈ−１、ＸＬ−２
２５、ＫＢＭ−４０３およびブチルセロソルブを１００
℃加熱下で溶解してワニスを調製し、このワニスとＴＣ
Ｇ−１をらいかい機で混練し、導電性樹脂ペーストを作
製し、その特性を下記の方法で測定し、その結果を表１
に示した。[Examples] The present invention will be explained below with reference to Examples. Examples 1 to 9 and Comparative Examples 1 to 4 DEN-438, EP-1001, H-1, XL-2 with respective compositions shown in Table 1
25, KBM-403 and butyl cellosolve 100
A varnish is prepared by melting it under heating at °C, and this varnish and TC
G-1 was kneaded using a milling machine to prepare a conductive resin paste, and its properties were measured using the method below. The results are shown in Table 1.
It was shown to.
【００２０】（１）導電性樹脂ペーストの粘度東京計器
社製のＥＨＤ型回転粘度計を用い、２５℃における粘度
を測定した。
（２）接着強さ
得られた導電性樹脂ペーストを銀メッキ付銅リードフレ
ーム上に塗布した後、２ｍｍ×２ｍｍのシリコンチップ
を乗せて圧着し、２５０℃に設定したヒートブロック上
に３０秒間放置して硬化させた。この硬化した試料の室
温での剪断接着強さおよび３５０℃での熱時剪断接着強
さを、プッシュプルゲージ（アイコーエンジニアリング
社製）を用いて測定した。
（３）粘度安定性
導電性樹脂ペーストを２５℃で１０日間放置したのちの
粘度を測定し、この粘度が初期の粘度の０．８〜１．２
倍の範囲内にあるものを○で示し、範囲外のものを×で
示した。また表１で使用した原料は次のとおりである。
ＤＥＮ−４３８：フェノールノボラック型エポキシ樹脂
（ダウケミカル社製商品名、エポキシ当量２００）ＥＰ
−１００１：エピ・ビス型エポキシ樹脂（油化シェルエ
ポキシ社製商品名、エポキシ当量＝４５０）
ＸＬ−２２５：フェノールアラルキル樹脂（三井東圧化
学社製商品名、水酸基当量１８５）Ｈ−１：フェノール
ノボラック樹脂
（明和化成社製商品名、水酸基当量１０６）ＫＢＭ−４
０３：希釈剤
（信越化学社製商品名、γ−グリシドキシプロピルトリ
メトキシシラン）ブチルセロソルブ：希釈剤（関東化学
社製商品名、試薬特級）
ＴＣＧ−１：導電性金属粉
（徳力化学社製、フレーク状銀粉）
ＴＰＰ・ＴＰＢ：硬化促進剤
（テトラフェニルホスホニウム・テトラフェニルボレー
ト塩、北興化学社製）
２Ｅ４ＭＺ・ＴＰＢ：硬化促進剤
（２−エチル−４−メチルイミダゾール・テトラフエニ
ルボレート塩、北興化学社製）
ＤＢＵ・ＴＰＢ：硬化促進剤
（１，８−ジアザビシクロ（５，４，０）ウンデセン−
７・テトラフェニルボレート塩、サンアプロ社製）２Ｐ
Ｚ−ＯＫ：硬化促進剤
（２−フェニルイミダゾール・イソシアヌール酸付加物
、四国化成社製商品名）(1) Viscosity of conductive resin paste The viscosity at 25° C. was measured using an EHD type rotational viscometer manufactured by Tokyo Keiki Co., Ltd. (2) Adhesive strength After applying the obtained conductive resin paste onto a silver-plated copper lead frame, place a 2 mm x 2 mm silicon chip on it, press it, and leave it on a heat block set at 250°C for 30 seconds. and cured. The shear adhesive strength at room temperature and the thermal shear adhesive strength at 350° C. of this cured sample were measured using a push-pull gauge (manufactured by Ikoh Engineering Co., Ltd.). (3) Viscosity stability After the conductive resin paste was left at 25°C for 10 days, the viscosity was measured, and the viscosity was 0.8 to 1.2 of the initial viscosity.
Those within the double range are marked with a circle, and those outside the range are marked with an x. The raw materials used in Table 1 are as follows. DEN-438: Phenol novolac type epoxy resin (trade name manufactured by Dow Chemical Company, epoxy equivalent weight 200) EP
-1001: Epi-bis type epoxy resin (trade name manufactured by Yuka Shell Epoxy Co., Ltd., epoxy equivalent = 450) XL-225: Phenol aralkyl resin (trade name manufactured by Mitsui Toatsu Chemical Co., Ltd., hydroxyl equivalent weight 185) H-1: Phenol Novolac resin (trade name manufactured by Meiwa Kasei Co., Ltd., hydroxyl equivalent: 106) KBM-4
03: Diluent (trade name manufactured by Shin-Etsu Chemical Co., Ltd., γ-glycidoxypropyltrimethoxysilane) Butyl cellosolve: Diluent (trade name manufactured by Kanto Chemical Co., Ltd., reagent special grade) TCG-1: Conductive metal powder (manufactured by Tokuriki Chemical Co., Ltd.) , flaky silver powder) TPP/TPB: Curing accelerator (tetraphenylphosphonium tetraphenylborate salt, manufactured by Hokko Chemical Co., Ltd.) 2E4MZ/TPB: Curing accelerator (2-ethyl-4-methylimidazole tetraphenylborate salt, Manufactured by Hokko Chemical Co., Ltd.) DBU/TPB: Curing accelerator (1,8-diazabicyclo(5,4,0) undecene-
7. Tetraphenylborate salt, manufactured by San-Apro) 2P
Z-OK: Curing accelerator (2-phenylimidazole/isocyanuric acid adduct, product name manufactured by Shikoku Kasei Co., Ltd.)
【００２１】[0021]
【表１】[Table 1]
【００２２】表１から、フェノールノボラック型エポキ
シ樹脂とエピ・ビス型エポキシ樹脂を併用した実施例１
〜３は、これらのエポキシ樹脂を単独で用いた比較例１
、２に比較して接着強さが高く、またグリシジル基を１
個有する化合物（ＫＢＭ−４０３）を添加しない比較例
３では、３５０℃における接着強さが低く、さらに硬化
促進剤としてイミダゾール類を用いた比較例４では、充
分な接着強さは得られるが、粘度安定性に欠けることが
示される。From Table 1, Example 1 using a combination of phenol novolac type epoxy resin and epi-bis type epoxy resin
~3 is Comparative Example 1 using these epoxy resins alone
, has higher adhesive strength than 2, and has a glycidyl group of 1
In Comparative Example 3, in which no proprietary compound (KBM-403) was added, the adhesive strength at 350°C was low, and in Comparative Example 4, in which imidazoles were used as a curing accelerator, sufficient adhesive strength was obtained, but It is shown to lack viscosity stability.
【００２３】[0023]
【発明の効果】本発明の導電性樹脂ペーストによれば、
２００〜３５０℃の熱時接着強さを低下させずに短時間
でＩＣ、ＬＳＩ等の半導体素子を、リードフレーム、セ
ラミック配線板、ガラスエポキシ基板等への支持部材に
接合することができるため、接合工程のインライン化が
可能となり、半導体装置の大幅なコスト低減を図ること
ができる。[Effects of the invention] According to the conductive resin paste of the present invention,
Semiconductor elements such as ICs and LSIs can be bonded to support members for lead frames, ceramic wiring boards, glass epoxy substrates, etc. in a short time without reducing adhesive strength when heated at 200 to 350°C. The bonding process can be performed in-line, and the cost of semiconductor devices can be significantly reduced.
Claims (2)
シ樹脂およびエピ・ビス型エポキシ樹脂からなる混合エ
ポキシ樹脂、 （Ｂ）フェノールノボラック樹脂および／またはフェノ
ールアラルキル樹脂、 （Ｃ）有機ボレート塩、 （Ｄ）グリシジル基を１個有するシラン化合物を少なく
とも１成分として含む希釈剤ならびに （Ｅ）導電性金属粉を含有してなる導電性樹脂ペースト
。Claim 1: (A) a mixed epoxy resin consisting of a phenol novolac type epoxy resin and an epi-bis type epoxy resin, (B) a phenol novolak resin and/or a phenol aralkyl resin, (C) an organic borate salt, (D) glycidyl A conductive resin paste comprising a diluent containing a silane compound having one group as at least one component, and (E) conductive metal powder.
用いて半導体素子を支持部材に接合させる半導体装置の
製造法。2. A method for manufacturing a semiconductor device, comprising bonding a semiconductor element to a support member using the conductive resin paste according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP08373691A JP3191243B2 (en) | 1990-04-27 | 1991-04-16 | Method of manufacturing conductive resin paste and semiconductor device |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2-112131 | 1990-04-27 | ||
| JP11213190 | 1990-04-27 | ||
| JP08373691A JP3191243B2 (en) | 1990-04-27 | 1991-04-16 | Method of manufacturing conductive resin paste and semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04218524A true JPH04218524A (en) | 1992-08-10 |
| JP3191243B2 JP3191243B2 (en) | 2001-07-23 |
Family
ID=26424774
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP08373691A Expired - Lifetime JP3191243B2 (en) | 1990-04-27 | 1991-04-16 | Method of manufacturing conductive resin paste and semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3191243B2 (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06302213A (en) * | 1993-04-14 | 1994-10-28 | Sumitomo Metal Mining Co Ltd | Conductive resin paste |
| WO2004044936A1 (en) * | 2002-11-13 | 2004-05-27 | Matsushita Electric Industrial Co., Ltd. | Solid electrolytic capacitor and process for producing the same |
| JP2008138147A (en) * | 2006-12-05 | 2008-06-19 | Shin Etsu Chem Co Ltd | Adhesive composition |
| JP2008218901A (en) * | 2007-03-07 | 2008-09-18 | The Inctec Inc | Curable conductive paste composition and printed wiring board |
| WO2009017253A1 (en) * | 2007-07-31 | 2009-02-05 | Sumitomo Bakelite Co., Ltd. | Liquid resin composition for adhesive, semiconductor device, and process for producing semiconductor device |
| JP2011129335A (en) * | 2009-12-17 | 2011-06-30 | Sumitomo Metal Mining Co Ltd | Heating curing type silver paste and conductive film formed using the same |
| CN111491994A (en) * | 2017-12-20 | 2020-08-04 | Ppg工业俄亥俄公司 | Coating compositions comprising phenol novolaks and organosilanes |
-
1991
- 1991-04-16 JP JP08373691A patent/JP3191243B2/en not_active Expired - Lifetime
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06302213A (en) * | 1993-04-14 | 1994-10-28 | Sumitomo Metal Mining Co Ltd | Conductive resin paste |
| WO2004044936A1 (en) * | 2002-11-13 | 2004-05-27 | Matsushita Electric Industrial Co., Ltd. | Solid electrolytic capacitor and process for producing the same |
| US7123468B2 (en) | 2002-11-13 | 2006-10-17 | Matsushita Electric Industrial Co., Ltd. | Solid electrolytic capacitor and process for producing the same |
| JP2008138147A (en) * | 2006-12-05 | 2008-06-19 | Shin Etsu Chem Co Ltd | Adhesive composition |
| JP2008218901A (en) * | 2007-03-07 | 2008-09-18 | The Inctec Inc | Curable conductive paste composition and printed wiring board |
| WO2009017253A1 (en) * | 2007-07-31 | 2009-02-05 | Sumitomo Bakelite Co., Ltd. | Liquid resin composition for adhesive, semiconductor device, and process for producing semiconductor device |
| JP5585760B2 (en) * | 2007-07-31 | 2014-09-10 | 住友ベークライト株式会社 | Liquid resin composition for adhesive, semiconductor device, and method for manufacturing semiconductor device |
| KR101489021B1 (en) * | 2007-07-31 | 2015-02-02 | 스미또모 베이크라이트 가부시키가이샤 | Liquid resin composition for adhesive, semiconductor device, and process for producing semiconductor device |
| JP2011129335A (en) * | 2009-12-17 | 2011-06-30 | Sumitomo Metal Mining Co Ltd | Heating curing type silver paste and conductive film formed using the same |
| CN111491994A (en) * | 2017-12-20 | 2020-08-04 | Ppg工业俄亥俄公司 | Coating compositions comprising phenol novolaks and organosilanes |
| CN111491994B (en) * | 2017-12-20 | 2022-04-29 | Ppg工业俄亥俄公司 | Coating compositions comprising phenol novolaks and organosilanes |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3191243B2 (en) | 2001-07-23 |
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