JPH042125A - Surface treatment of silicon - Google Patents
Surface treatment of siliconInfo
- Publication number
- JPH042125A JPH042125A JP10355490A JP10355490A JPH042125A JP H042125 A JPH042125 A JP H042125A JP 10355490 A JP10355490 A JP 10355490A JP 10355490 A JP10355490 A JP 10355490A JP H042125 A JPH042125 A JP H042125A
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- halogen
- low
- halogen atoms
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 34
- 239000010703 silicon Substances 0.000 title claims abstract description 33
- 238000004381 surface treatment Methods 0.000 title claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 19
- 229910052736 halogen Inorganic materials 0.000 claims abstract description 17
- 125000005843 halogen group Chemical group 0.000 claims abstract description 17
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 14
- 239000001257 hydrogen Substances 0.000 claims abstract description 13
- 150000002367 halogens Chemical class 0.000 claims description 16
- 239000007789 gas Substances 0.000 claims description 12
- 238000003672 processing method Methods 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 9
- YZCKVEUIGOORGS-IGMARMGPSA-N Protium Chemical compound [1H] YZCKVEUIGOORGS-IGMARMGPSA-N 0.000 abstract description 5
- 238000010438 heat treatment Methods 0.000 abstract description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 abstract description 2
- 229910052990 silicon hydride Inorganic materials 0.000 abstract description 2
- -1 halogen hydride Chemical class 0.000 abstract 2
- 239000012808 vapor phase Substances 0.000 abstract 2
- 229910008045 Si-Si Inorganic materials 0.000 abstract 1
- 229910006411 Si—Si Inorganic materials 0.000 abstract 1
- 238000005530 etching Methods 0.000 description 11
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 4
- 229910052753 mercury Inorganic materials 0.000 description 4
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 239000012495 reaction gas Substances 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000001657 homoepitaxy Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000007348 radical reaction Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔概要〕
シリコン（Ｓｉ）の表面処理方法に係り、特にＳｉ表面
を覆うハロゲン原子の低温除去方法に関し。DETAILED DESCRIPTION OF THE INVENTION [Summary] The present invention relates to a method for surface treatment of silicon (Si), and in particular to a method for low-temperature removal of halogen atoms covering the surface of Si.
本発明はシリコン（Ｓｔ）の表面処理方法に係り。 The present invention relates to a method for surface treatment of silicon (St).
特にＳｉ表面を覆うハロゲン原子の低温除去方法に関す
る。In particular, the present invention relates to a method for low-temperature removal of halogen atoms covering the Si surface.
近年、デバイスの微細化にともない、Ｓｉデ）＜４スの
製造プロセスにおいても低温プロセスが要望される。In recent years, with the miniaturization of devices, low-temperature processes are also required in the manufacturing process of Si devices.
そのため、成膜前のＳｔウェハの表面に生成する自然酸
化膜の除去に、ハロゲンを用いたエツチングを行ってい
るが、その際にＳｉ表面を覆うハロゲン原子の低温除去
方法として本発明を利用することができる。For this reason, etching using halogen is used to remove the natural oxide film that forms on the surface of the St wafer before film formation, and the present invention can be used as a low-temperature method for removing halogen atoms covering the Si surface. be able to.
面がハロゲン原子で覆われてしまい、これを除去するた
めには７５０°Ｃ以上の熱処理を必要とする。The surface is covered with halogen atoms, and heat treatment at 750°C or higher is required to remove them.
本発明はＳｉ表面をハロゲンエツチングし−た際。 In the present invention, the Si surface is subjected to halogen etching.
Ｓｉ表面を覆うハロゲン原子の低温除去方法を提供して
、低温プロセスによるデバイスの微細化に寄与すること
を目的とする。The present invention aims to provide a low-temperature removal method for halogen atoms covering the Si surface, thereby contributing to miniaturization of devices through low-temperature processes.
低温でＳｉのホモエピタキシーを行おうとする場合、成
長前にＳｉ表面を覆うＳｉ酸化膜の除去が必要である。When attempting to homoepitaxy Si at low temperatures, it is necessary to remove the Si oxide film covering the Si surface before growth.
このために、高温での処理は可能であるが。For this reason, processing at high temperatures is possible.
７５０〜１０００°Ｃの温度を必要とするため、デバイ
ス形成の上で制約となっていた。Since it requires a temperature of 750 to 1000°C, it has been a constraint on device formation.
一方、低温での酸化膜の除去は、塩素（ＣＩ）や弗素（
Ｆ）等のハロゲンを用いてＳｉ酸化膜をエツチング除去
する試みがなされている。On the other hand, oxide film removal at low temperatures is possible using chlorine (CI) or fluorine (
Attempts have been made to remove the Si oxide film by etching using a halogen such as F).
しかし、この場合の欠点はエツチング後の３１表〔課題
を解決するための手段〕
上記課題の解決は。However, the drawback in this case is Table 31 after etching [Means for Solving the Problem] The solution to the above problem is as follows.
■）シリコン表面を覆うハロゲン原子を除去する方法で
あって、シリコン水素ラジカルを該シリコンと反応させ
、水素化ハロゲンとして気相中に除去するシリコンの表
面処理方法、あるいは２）ハロゲンを含むガスによりシ
リコン表面の自然酸化膜をエツチング除去した後に行う
上記１）記載のシリコンの表面処理方法、あるいは３）
シリコンのエピタキシャル成長を行う前に行う上記ｌ）
記載の記載のシリコンの表面処理方法により達成される
。(2) A silicon surface treatment method for removing halogen atoms covering the silicon surface, in which silicon hydrogen radicals are reacted with the silicon and removed in the gas phase as hydrogenated halogen, or (2) A method for removing halogen atoms covering the silicon surface. The silicon surface treatment method described in 1) above, which is carried out after removing the natural oxide film on the silicon surface by etching, or 3)
The above l) performed before epitaxial growth of silicon.
This is achieved by the silicon surface treatment method described herein.
本発明は、Ｓｉ表面を覆うハロゲン原子をシリコン水素
化物ラジカルと反応させて、水素化ハロゲン分子として
気相中に除去するようにしたものである。In the present invention, halogen atoms covering the Si surface are reacted with silicon hydride radicals and removed as hydrogenated halogen molecules into the gas phase.
このときの反応は第１図のようになる。The reaction at this time is as shown in Figure 1.
第１図（ａ）〜（Ｃ）は本発明の原理説明図である。FIGS. 1(a) to 1(C) are diagrams explaining the principle of the present invention.
第１図（ａ）において、ハロゲン原子Ｘで覆われたＳｉ
表面にシリコン水素ラジカル（：５ｉＨｚ）を接近させ
ると、第１図（ロ）のようにシリコン水素ラジカルはＳ
ｉ表面にインサートされて５ｔ−Ｓｉ結合を形成し、そ
の後、６５０°Ｃ程度の低温熱処理により第１図（Ｃ）
のようにハロゲン原子Ｘは水素化ハロゲン（ＨＸ）とな
って気相中に放出される。In FIG. 1(a), Si covered with halogen atoms
When silicon hydrogen radicals (:5iHz) are brought close to the surface, the silicon hydrogen radicals become S as shown in Figure 1 (b).
Figure 1 (C)
The halogen atom X becomes a hydrogenated halogen (HX) and is released into the gas phase.
この反応の結果、 Ｓｉ表面は水素原子で覆われること
になるが、水素は６５０°Ｃ程度の熱処理で除去される
ことが分かっているので問題はない。As a result of this reaction, the Si surface is covered with hydrogen atoms, but it is known that hydrogen can be removed by heat treatment at about 650°C, so there is no problem.
また、この反応の結果、Ｓｉ層が１層増えることになる
が、このことはデバイス形成上の問題にはならない。Further, as a result of this reaction, the number of Si layers increases by one layer, but this does not pose a problem in device formation.
第２図は本発明の一実施例を説明する処理装置の模式断
面図である。FIG. 2 is a schematic sectional view of a processing apparatus for explaining an embodiment of the present invention.
図において、１は反応室、２は反応ガスの導入口、３は
排気口、４はウェハ台、５は加熱ヒータ。In the figure, 1 is a reaction chamber, 2 is a reaction gas inlet, 3 is an exhaust port, 4 is a wafer stand, and 5 is a heater.
６はマイクロ波発振・共振器、Ｗは被処理Ｓｔウェハで
ある。6 is a microwave oscillator/resonator, and W is a St wafer to be processed.
実施例で留意する点はつぎの２点である。The following two points should be noted in the embodiment.
■ シリコン水素ラジカルを生成させる■ Ｓｔの不要
な成長を抑制する
上記の■に対して、実施例では次の２通りの方法を用い
た。(2) Generating silicon hydrogen radicals (2) Suppressing unnecessary growth of St In response to the above (2), the following two methods were used in the examples.
（ａ） モノシラン（ＳｉＨ２）のマイクロ波プラズ
マによるシリコン水素ラジカルの生成
（ｂ） 四弗化シリコン（ＳｉＦ４）と水素（Ｈ２）
のマイクロ波プラズマによるシリコン水素ラジカルの生
成
上記の■に対しては、Ｈ２による反応ガスの希釈。(a) Generation of silicon hydrogen radicals by microwave plasma of monosilane (SiH2) (b) Silicon tetrafluoride (SiF4) and hydrogen (H2)
Generation of silicon hydrogen radicals by microwave plasma.For ① above, dilute the reaction gas with H2.
Ｓｉｎ、の添加によって処理時間を調整すれば＋Ｓｉの
不要な成長を抑制することができる。By adjusting the processing time by adding Sin, unnecessary growth of +Si can be suppressed.
なお、弗素（Ｆｇ）ガスはＳｔ酸化膜除去のためのエツ
チングガスである。Note that fluorine (Fg) gas is an etching gas for removing the St oxide film.
つぎに、 Ｓｉウェハのハロゲンエツチングからシリコ
ン水素ラジカル処理までの具体的な条件例について記載
する。Next, specific examples of conditions from halogen etching of a Si wafer to silicon hydrogen radical treatment will be described.
ｉ）ハロゲンエツチング
Ｆ２の流量： １０ ＳＣＣＭ
Ｆ２の圧カニ １０ Ｔｏｒｒ
ウェハ温度：２５°Ｃ
処理時間： ５分
１ｉ−ａ） シリコン水素ラジカルの反応Ｈ２の流量：
５００５ＣＣＦＩ
ＳｉＨ＜の流量： ０．Ｉ ＳＣＣＭガス圧カニ
０．Ｉ Ｔｏｒｒ
ウェハ温度：５００°Ｃ
マイクロ被電カニ ＩＫＷ／ウェハ処理時間：１０
分
１ｉ−ｂ） シリコン水素ラジカルの反応Ｈ２の流量：
５００ ＳＣＣＭ
ＳｉＦａの流量： ０．Ｉ ＳＣＣＭガス圧カニ
０．Ｉ Ｔｏｒｒ
ウェハ温度：５００°Ｃ
マイクロ被電カニ ＩＫＷ／ウェハ処理時間：１０
分
ｉｊ）水素化ハロゲンの除去
Ｈ２の流量： １ｏｏｏ ＳＣＣＭ
ウェハ温度：５００°Ｃ
加熱時間： ５分
第３図は本発明の他の実施例を説明する処理装置の模式
断面図である。i) Halogen etching F2 flow rate: 10 SCCM F2 pressure crab 10 Torr Wafer temperature: 25°C Processing time: 5 minutes 1i-a) Silicon hydrogen radical reaction H2 flow rate:
Flow rate of 5005CCFI SiH<: 0. I SCCM gas pressure crab
0. I Torr Wafer temperature: 500°C Micro-electrified crab IKW/Wafer processing time: 10
min 1i-b) Flow rate of reaction H2 of silicon hydrogen radicals:
500 SCCM SiFa flow rate: 0. I SCCM gas pressure crab
0. I Torr Wafer temperature: 500°C Micro-electrified crab IKW/Wafer processing time: 10
min ij) Removal of hydrogenated halogen H2 flow rate: 1 ooo SCCM Wafer temperature: 500°C Heating time: 5 minutes FIG. 3 is a schematic cross-sectional view of a processing apparatus illustrating another embodiment of the present invention.
図において、１は反応室、 ＩＡは合成石英の窓。In the figure, 1 is the reaction chamber and IA is the synthetic quartz window.
２は反応ガスの導入口、３は排気口、４はウェハ台、５
は加熱ヒータ、７は低圧水銀灯、Ｗは被処理Ｓｉウェハ
である。2 is a reaction gas inlet, 3 is an exhaust port, 4 is a wafer stand, 5
is a heater, 7 is a low-pressure mercury lamp, and W is a Si wafer to be processed.
この例は、ジシラン（ＳｉＪ６）の低圧水銀灯によりシ
リコン水素ラジカルを生成している。In this example, silicon hydrogen radicals are generated using a low-pressure mercury lamp of disilane (SiJ6).
その他のガスは第２図の例と同様である。Other gases are the same as in the example shown in FIG.
つぎに、Ｓｉウェハのハロゲンエツチングがらシリコン
水素ラジカル処理までの具体的な条件について記載する
。Next, specific conditions from halogen etching of the Si wafer to silicon hydrogen radical treatment will be described.
１）ハロゲンエツチング
第２図の例と同様
１１）シリコン水素ラジカルの反応
Ｈ２の流量： １０００ ＳＣＣＭ
Ｓｉ、Ｈ，の流量： ０．Ｉ ＳＣＣＭＳｉｎ、の
流ｉｔ ： ０．０５５ＣＣＭガス圧カニ ２００
Ｔｏｒｒ
ウェハ温度： ５００℃
低圧水銀打電カフ ３ＫＨ／ウ工ハ
処理時間；１０分
ｉｉｉ ）水素化ハロゲンの除去
第２図の例と同様
〔発明の効果〕
以上説明したように本発明によれば、 Ｓｉ表面をハロ
ゲンエツチングした際＋Ｓｚ表面を覆うハロゲン原子の
低温除去が可能となり、低温プロセスによるデバイスの
微細化に寄与することができる。1) Halogen etching Same as the example in Figure 2 11) Reaction of silicon hydrogen radicals Flow rate of H2: 1000 SCCM Flow rate of Si, H,: 0. I SCCMSin, flow: 0.055CCM gas pressure crab 200
Torr Wafer temperature: 500°C Low-pressure mercury electric cuff 3KH/wafer processing time: 10 minutes iii) Removal of hydrogenated halogen Same as the example in FIG. 2 [Effects of the invention] As explained above, according to the present invention, When the Si surface is subjected to halogen etching, the halogen atoms covering the +Sz surface can be removed at a low temperature, contributing to miniaturization of devices by low-temperature processes.
例えば、Ｓｉのエピタキシャル成長が６５０°Ｃで実現
でき、浅い接合や結晶欠陥の少ないエピタキシャル成長
が可能となる。For example, epitaxial growth of Si can be realized at 650° C., making it possible to achieve shallow junctions and epitaxial growth with few crystal defects.
第１図（ａ）〜（Ｃ）は本発明の原理説明図。
第２図は本発明の一実施例を説明する処理装置の模式断
面図。
第３図は本発明の他の実施例を説明する処理装置の模式
断面図である。
図において。
１は反応室。
２は反応ガスの導入口。
３は排気口。
４はウェハ台。
５は加熱ヒータ。
６はマイクロ波発振・共振器。
７は低圧水銀灯。
Ｗは被処理Ｓｔウェハ
Ｈｘ
（α）接近
（ｂ）インサート
（Ｃ）９定
派理
説明図
第
閃FIGS. 1(a) to 1(C) are diagrams explaining the principle of the present invention. FIG. 2 is a schematic cross-sectional view of a processing device illustrating an embodiment of the present invention. FIG. 3 is a schematic sectional view of a processing apparatus for explaining another embodiment of the present invention. In fig. 1 is a reaction chamber. 2 is an inlet for reactant gas. 3 is the exhaust port. 4 is a wafer stand. 5 is a heater. 6 is a microwave oscillator/resonator. 7 is a low pressure mercury lamp. W is St wafer to be processed Hx (α) Approach (b) Insert (C) 9th theorem explanatory diagram flash
Claims (1)
あって、シリコン水素ラジカルを該シリコンと反応させ
、水素化ハロゲンとして気相中に除去することを特徴と
するシリコンの表面処理方法。 ２）ハロゲンを含むガスによりシリコン表面の自然酸化
膜をエッチング除去した後に行うことを特徴とする請求
項１記載のシリコンの表面処理方法。 ３）シリコンのエピタキシャル成長を行う前に行うこと
を特徴とする請求項１記載のシリコンの表面処理方法。[Claims] 1) A method for removing halogen atoms covering a silicon surface, which comprises reacting silicon hydrogen radicals with the silicon and removing them as hydrogenated halogens into a gas phase. Processing method. 2) The silicon surface treatment method according to claim 1, wherein the silicon surface treatment is carried out after a natural oxide film on the silicon surface has been etched away using a gas containing halogen. 3) The method for surface treatment of silicon according to claim 1, characterized in that the treatment is carried out before epitaxial growth of silicon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10355490A JPH042125A (en) | 1990-04-19 | 1990-04-19 | Surface treatment of silicon |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10355490A JPH042125A (en) | 1990-04-19 | 1990-04-19 | Surface treatment of silicon |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH042125A true JPH042125A (en) | 1992-01-07 |
Family
ID=14357042
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10355490A Pending JPH042125A (en) | 1990-04-19 | 1990-04-19 | Surface treatment of silicon |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH042125A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0613333A (en) * | 1992-02-18 | 1994-01-21 | Nec Corp | Thermal cvd method |
| JPH08260443A (en) * | 1995-03-27 | 1996-10-08 | Kiso Kogyo Kk | Method of water-channel forming construction and water channel formed by method of construction thereof |
| WO2013171988A1 (en) * | 2012-05-16 | 2013-11-21 | 株式会社アルバック | Film deposition method and film deposition apparatus |
| JP2014053643A (en) * | 2006-03-31 | 2014-03-20 | Tokyo Electron Ltd | Removal of oxide using fluorine and hydrogen in order |
-
1990
- 1990-04-19 JP JP10355490A patent/JPH042125A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0613333A (en) * | 1992-02-18 | 1994-01-21 | Nec Corp | Thermal cvd method |
| JPH08260443A (en) * | 1995-03-27 | 1996-10-08 | Kiso Kogyo Kk | Method of water-channel forming construction and water channel formed by method of construction thereof |
| JP2014053643A (en) * | 2006-03-31 | 2014-03-20 | Tokyo Electron Ltd | Removal of oxide using fluorine and hydrogen in order |
| WO2013171988A1 (en) * | 2012-05-16 | 2013-11-21 | 株式会社アルバック | Film deposition method and film deposition apparatus |
| US20140287588A1 (en) * | 2012-05-16 | 2014-09-25 | Ulvac, Inc. | Deposition Method and Deposition Apparatus |
| JPWO2013171988A1 (en) * | 2012-05-16 | 2016-01-12 | 株式会社アルバック | Film forming method and film forming apparatus |
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