JPH04212214A - Manufacture of oxide superconductive thin film - Google Patents
Manufacture of oxide superconductive thin filmInfo
- Publication number
- JPH04212214A JPH04212214A JP3030402A JP3040291A JPH04212214A JP H04212214 A JPH04212214 A JP H04212214A JP 3030402 A JP3030402 A JP 3030402A JP 3040291 A JP3040291 A JP 3040291A JP H04212214 A JPH04212214 A JP H04212214A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- oxide superconducting
- base material
- superconducting thin
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 34
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 239000010408 film Substances 0.000 claims abstract description 37
- 239000000463 material Substances 0.000 claims abstract description 33
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 22
- 230000008021 deposition Effects 0.000 claims abstract description 11
- 239000002245 particle Substances 0.000 claims abstract description 6
- 238000000608 laser ablation Methods 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 239000004332 silver Substances 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910000856 hastalloy Inorganic materials 0.000 claims description 2
- 229910001293 incoloy Inorganic materials 0.000 claims description 2
- 229910001026 inconel Inorganic materials 0.000 claims description 2
- 239000007769 metal material Substances 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910002077 partially stabilized zirconia Inorganic materials 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 229910002076 stabilized zirconia Inorganic materials 0.000 claims description 2
- 229910001220 stainless steel Inorganic materials 0.000 claims description 2
- 239000010935 stainless steel Substances 0.000 claims description 2
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 7
- 238000005299 abrasion Methods 0.000 abstract 1
- 239000000523 sample Substances 0.000 description 10
- 238000000151 deposition Methods 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 239000013078 crystal Substances 0.000 description 5
- 239000007788 liquid Substances 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 238000002679 ablation Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- QRSFFHRCBYCWBS-UHFFFAOYSA-N [O].[O] Chemical compound [O].[O] QRSFFHRCBYCWBS-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000003378 silver Chemical class 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Abstract
Description
【０００１】0001
【産業上の利用分野】この発明は、レーザアブレーショ
ンによる成膜方法を用いる酸化物超電導薄膜の製造方法
に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing an oxide superconducting thin film using a laser ablation method.
【０００２】0002
【従来の技術】レーザビームをターゲットに照射すると
、レーザビームの照射部分においてアブレーションが生
じ、このアブレーションによりターゲットを構成する物
質の粒子が原子および分子の状態で飛散する。飛散した
粒子は、ターゲットに対向するように配置された基材上
に堆積され、それによって、基材上にターゲットを構成
する物質からなる薄膜が形成される。2. Description of the Related Art When a target is irradiated with a laser beam, ablation occurs in the irradiated portion of the laser beam, and this ablation causes particles of the substance constituting the target to be scattered in the form of atoms and molecules. The scattered particles are deposited on a base material placed to face the target, thereby forming a thin film of the substance constituting the target on the base material.
【０００３】このようなレーザアブレーションによる成
膜方法が、酸化物超電導薄膜の製造方法として、最近注
目されている。レーザアブレーション法によれば、ター
ゲットと堆積された薄膜との間での組成のずれがないと
いう特徴を有しているとともに、比較的低温かつ高速で
酸化物超電導薄膜を製造することができるという特徴を
有している。したがって、基材として、長尺の可撓性基
材を用いると、長尺の可撓性基材の表面に酸化物超電導
薄膜が形成された酸化物超電導線材を能率的に製造する
ことが可能になる。[0003] Such a film forming method using laser ablation has recently attracted attention as a method for manufacturing oxide superconducting thin films. According to the laser ablation method, there is no compositional deviation between the target and the deposited thin film, and the oxide superconducting thin film can be produced at a relatively low temperature and high speed. have. Therefore, by using a long flexible base material as the base material, it is possible to efficiently manufacture an oxide superconducting wire in which an oxide superconducting thin film is formed on the surface of the long flexible base material. become.
【０００４】0004
【発明が解決しようとする課題】上述したような酸化物
超電導線材を構成するために用いられる長尺の可撓性基
材は、金属またはセラミックスのような材料から構成さ
れるが、金属、セラミックスに関わらず、可撓性を有す
る材料は、一般的に多結晶状態である。したがって、酸
化物超電導線材を製造しようとする場合、多くは、多結
晶状態にある基材を用いなければならないことになる。[Problems to be Solved by the Invention] The long flexible base material used to construct the oxide superconducting wire as described above is made of a material such as metal or ceramics. Regardless, flexible materials are generally in a polycrystalline state. Therefore, when attempting to manufacture an oxide superconducting wire, it is often necessary to use a base material in a polycrystalline state.
【０００５】一般に、レーザアブレーションのような気
相法による成膜方法によって酸化物超電導薄膜を製造し
ようとする場合、基材が単結晶であれば、成膜速度を高
速化しても、高品質の酸化物超電導薄膜を得ることが可
能であった。これに対して、基材が多結晶である場合に
は、成膜速度を比較的高速化すると、高品質の酸化物超
電導薄膜を得ることが困難であった。この原因は、基材
が多結晶であれば、基材を構成している個々の結晶粒子
が種々の方向を向いており、その結果、成膜の初期に種
々の方向に向いた析出粒子が成長してしまうためである
と考えられる。Generally, when attempting to manufacture an oxide superconducting thin film by a vapor phase deposition method such as laser ablation, if the base material is a single crystal, even if the deposition rate is increased, high quality cannot be achieved. It was possible to obtain oxide superconducting thin films. On the other hand, when the base material is polycrystalline, it is difficult to obtain a high-quality oxide superconducting thin film when the film formation rate is relatively high. The reason for this is that if the base material is polycrystalline, the individual crystal grains that make up the base material are oriented in various directions, and as a result, precipitated particles oriented in various directions occur at the beginning of film formation. This is thought to be due to growth.
【０００６】なお、基材が多結晶の場合であっても、成
膜速度を低くすれば、高品質の酸化物超電導薄膜が得ら
れている。しかしながら、たとえば酸化物超電導線材の
ように、長尺の基材上に酸化物超電導薄膜を形成しなけ
ればならない場合には、成膜速度が高速でなければ、工
業的生産を能率的に行なうことができない。[0006] Even when the base material is polycrystalline, a high quality oxide superconducting thin film can be obtained by lowering the deposition rate. However, when an oxide superconducting thin film must be formed on a long base material, such as an oxide superconducting wire, it is difficult to efficiently perform industrial production unless the film formation rate is high. I can't.
【０００７】それゆえに、この発明の目的は、たとえ多
結晶状態の基材を用いる場合であっても、高品質の酸化
物超電導薄膜を能率的に製造することができる方法を提
供しようとすることである。Therefore, an object of the present invention is to provide a method that can efficiently produce a high quality oxide superconducting thin film even when using a polycrystalline base material. It is.
【０００８】[0008]
【課題を解決するための手段】この発明は、レーザビー
ムをターゲットに照射し、ターゲットより飛散した粒子
を基材上に堆積させる、レーザアブレーションによる成
膜方法を用いる、酸化物超電導薄膜の製造方法に向けら
れるものであって、上述した技術的課題を解決するため
、堆積の初期には、成膜速度を比較的低速化し、その後
、成膜速度を比較的高速化することを特徴としている。[Means for Solving the Problems] The present invention provides a method for producing an oxide superconducting thin film using a film forming method by laser ablation, in which a laser beam is irradiated onto a target and particles scattered from the target are deposited on a base material. In order to solve the above-mentioned technical problem, the film formation rate is relatively low in the initial stage of deposition, and then the film formation rate is relatively high.
【０００９】この発明において、基材として、長尺の可
撓性基材が用いられるとき、そのような基材上に酸化物
超電導薄膜が形成された酸化物超電導線材を有利に製造
するとこができる。可撓性基材としては、部分安定化ジ
ルコニア、安定化ジルコニア、アルミナ、イットリア、
シリカもしくはチタニアのセラミックス、または、白金
、金、銀、アルミニウム、ニッケル、ハステロイ、イン
コネル、インコロイもしくはステンレス鋼の金属材料か
ら構成されたものを用いることができる。In the present invention, when a long flexible base material is used as the base material, it is possible to advantageously produce an oxide superconducting wire having an oxide superconducting thin film formed on such a base material. can. Flexible base materials include partially stabilized zirconia, stabilized zirconia, alumina, yttria,
Ceramics such as silica or titania, or metal materials such as platinum, gold, silver, aluminum, nickel, Hastelloy, Inconel, Incoloy or stainless steel can be used.
【００１０】0010
【作用】この発明において、堆積の初期に成膜速度を下
げることによって、たとえ多結晶の基材上であっても、
粒子の方向が揃った成膜が達成される。このような粒子
の方向が揃った成膜が一旦なされると、その後、成膜速
度が高められても、すでに形成された膜と結晶軸が揃っ
た状態で成膜されることができる。[Operation] In this invention, by lowering the film formation rate at the initial stage of deposition, even on a polycrystalline substrate,
Film formation with uniform grain orientation is achieved. Once such a film is formed with the grains aligned in the same direction, even if the film formation rate is increased thereafter, the film can be formed with the crystal axes aligned with those of the already formed film.
【００１１】[0011]
【発明の効果】したがって、この発明によれば、たとえ
多結晶状態の基材上であっても、高品質の酸化物超電導
薄膜を製造することができる。それゆえに、多結晶状態
であることがほとんどである可撓性を有する材料からな
る基材を有利に用いることができる。そのため、長尺の
可撓性基材を用いて構成される酸化物超電導線材の製造
に有利に適用することができる。Therefore, according to the present invention, a high quality oxide superconducting thin film can be produced even on a polycrystalline substrate. Therefore, a substrate made of a flexible material that is mostly in a polycrystalline state can be advantageously used. Therefore, it can be advantageously applied to manufacturing an oxide superconducting wire constructed using a long flexible base material.
【００１２】また、この発明では、堆積の初期において
のみ成膜速度を比較的低速化すれば済むので、所望の厚
みの酸化物超電導薄膜を得るために、それほど長い時間
を必要としない。むしろ、得ようとする酸化物超電導薄
膜の厚み方向での大部分が、比較的高速の成膜速度をも
って形成されるので、全体としては、能率的に酸化物超
電導薄膜を製造することができる。堆積の初期において
低い成膜速度で成膜される薄膜の厚みは、たとえば５０
０オングストローム程度あれば十分である。このような
意味からも、この発明によれば、長尺の基材上に酸化物
超電導薄膜を能率的に形成することができるので、長尺
の基材を用いる酸化物超電導線材の製造を能率的に進め
ることができる。Furthermore, in the present invention, since it is only necessary to reduce the film formation rate to a relatively low speed only in the initial stage of deposition, it is not necessary to take a very long time to obtain an oxide superconducting thin film of a desired thickness. Rather, since most of the desired oxide superconducting thin film in the thickness direction is formed at a relatively high deposition rate, the oxide superconducting thin film can be efficiently produced as a whole. The thickness of a thin film formed at a low deposition rate at the initial stage of deposition is, for example, 50
A thickness of about 0 angstrom is sufficient. From this point of view, according to the present invention, an oxide superconducting thin film can be efficiently formed on a long base material, so that the production of oxide superconducting wire using a long base material can be made more efficient. You can move forward.
【００１３】[0013]
実験例１
エキシマレーザを用いて、ＹＢａＣｕＯ系酸化物超電導
薄膜の製造を行なった。Experimental Example 1 A YBaCuO-based oxide superconducting thin film was manufactured using an excimer laser.
【００１４】より詳細には、レーザビーム源から放出さ
れたレーザビームを、球面レンズを通してターゲット上
に照射した。このとき、球面レンズとして直径６０ｍｍ
のものを用い、この球面レンズに入射されるレーザビー
ムの幅を３０ｍｍとした。球面レンズを通過したレーザ
ビームは、ターゲット上に集光されるが、球面レンズと
ターゲット上の集光点との距離を３００ｍｍとした。ま
た、ターゲットへのレーザビームの入射角度を４５度と
した。また、ターゲット上の集光点から垂線方向に７０
ｍｍ離して、基材を設置した。More specifically, a laser beam emitted from a laser beam source was irradiated onto a target through a spherical lens. At this time, the diameter of the spherical lens is 60 mm.
The width of the laser beam incident on this spherical lens was set to 30 mm. The laser beam that passed through the spherical lens was focused on the target, and the distance between the spherical lens and the focal point on the target was 300 mm. Further, the angle of incidence of the laser beam on the target was set to 45 degrees. Also, in the perpendicular direction from the focal point on the target,
The base materials were placed with a distance of mm.
【００１５】
その他の成膜条件は、以下のとおりである。
レーザ：ＡｒＦ，１９３ｎｍ
ターゲット：Ｙ１ Ｂａ２ Ｃｕ３ ＯＸ 雰囲気ガス
：酸素
酸素圧力：５００ｍＴｏｒｒ
レーザエネルギ密度：１Ｊ／ｃｍ２
基材：ＭｇＯを片面被覆した銀テープ
基材温度：６５０℃
成膜開始時に、低速で成膜するため、レーザ周波数１Ｈ
ｚで１０分間成膜し、その後、高速で成膜するため、レ
ーザ周波数１００Ｈｚで１分間成膜した。成膜後、成膜
室よりサンプルを取出し、得られた超導電薄膜の厚みを
調べたところ、１μｍであった。Other film forming conditions are as follows. Laser: ArF, 193 nm Target: Y1 Ba2 Cu3 OX Atmosphere gas: Oxygen Oxygen pressure: 500 mTorr Laser energy density: 1 J/cm2 Base material: Silver tape coated on one side with MgO Temperature: 650°C At the start of film formation, the film was formed at a low speed. Laser frequency 1H for coating
The film was formed for 10 minutes at a laser frequency of 100 Hz, and then for 1 minute at a laser frequency of 100 Hz to form a film at high speed. After the film formation, a sample was taken out from the film formation chamber and the thickness of the obtained superconducting thin film was examined and found to be 1 μm.
【００１６】Ｘ線回折装置で超電導薄膜の結晶配向性を
調べたところ、ｃ軸が、基材に対して垂直に配向してい
ることが確認できた。When the crystal orientation of the superconducting thin film was examined using an X-ray diffractometer, it was confirmed that the c-axis was oriented perpendicularly to the base material.
【００１７】４端子法を用いて液体窒素中におけるサン
プルの臨界電流密度を測定した。臨界電流密度は、４１
００００Ａ／ｃｍ２ であった。また、臨界温度を測定
したところ、８９．５Ｋであった。The critical current density of the sample in liquid nitrogen was measured using the four-probe method. The critical current density is 41
0000A/cm2. Moreover, when the critical temperature was measured, it was 89.5K.
【００１８】基材を１０ｍｍ／分の速度で移動させるこ
と以外は上記と同じ条件で成膜を行なった。得られたサ
ンプルの液体窒素中での臨界電流密度は、３５００００
Ａ／ｃｍ２ であった。Film formation was carried out under the same conditions as above except that the substrate was moved at a speed of 10 mm/min. The critical current density of the obtained sample in liquid nitrogen was 350,000
It was A/cm2.
【００１９】比較例として、成膜時のレーザ周波数を最
初から１００Ｈｚに設定した以外は、上記と同じ条件で
酸化物超電導薄膜の製造を行なった。As a comparative example, an oxide superconducting thin film was manufactured under the same conditions as above, except that the laser frequency during film formation was set to 100 Hz from the beginning.
【００２０】成膜後、サンプルの酸化物超電導薄膜の厚
みを調べたところ、成膜速度は、上記実施例とほぼ同じ
であった。After the film formation, the thickness of the sample oxide superconducting thin film was examined, and it was found that the film formation rate was almost the same as in the above example.
【００２１】Ｘ線回折装置で酸化物超電導薄膜の結晶配
向性を調べたところ、ｃ軸が、基材に対して垂直に配向
していることが確認できた。When the crystal orientation of the oxide superconducting thin film was examined using an X-ray diffractometer, it was confirmed that the c-axis was oriented perpendicularly to the substrate.
【００２２】４端子法を用いて液体窒素中におけるサン
プルの臨界電流密度を測定した。臨界電流密度は９００
０Ａ／ｃｍ２ であった。また、臨界温度を測定したと
ころ、８３．１Ｋであった。The critical current density of the sample in liquid nitrogen was measured using the four-probe method. Critical current density is 900
It was 0A/cm2. Moreover, when the critical temperature was measured, it was 83.1K.
【００２３】
実験例２
基材として、厚み０．２ｍｍ、幅１０ｍｍ、長さ１ｍの
銀テープを用いた。この実験例２では、前述した実験例
１と異なり、銀テープにＭｇＯ被覆が施されていない。Experimental Example 2 A silver tape with a thickness of 0.2 mm, a width of 10 mm, and a length of 1 m was used as a base material. In Experimental Example 2, unlike Experimental Example 1 described above, the silver tape was not coated with MgO.
【００２４】この銀テープを、実験例１と同じように設
置し、これをテープ面と平行に１ｃｍ／分のスピードで
移動させながら、その上にレーザアブレーション法によ
り成膜を行なった。なお、特に指摘する条件以外の条件
については、前述した実験例１と同様である。This silver tape was placed in the same manner as in Experimental Example 1, and a film was formed thereon by laser ablation while moving it parallel to the tape surface at a speed of 1 cm/min. Note that conditions other than those specifically pointed out are the same as those in Experimental Example 1 described above.
【００２５】まず、レーザ繰返し周波数を１Ｈｚとして
、１０分の成膜を行ない、銀テープのほぼ全長にわたっ
て厚み４００オングストローム程度の膜を形成した。
次に、レーザ繰返し周波数を１００Ｈｚとして、５分の
成膜を行ない、上述した膜のさらに上に厚み２μｍ程度
の膜を形成した。First, film formation was carried out for 10 minutes at a laser repetition frequency of 1 Hz to form a film approximately 400 angstroms thick over almost the entire length of the silver tape. Next, film formation was performed for 5 minutes at a laser repetition frequency of 100 Hz to form a film with a thickness of about 2 μm further above the above film.
【００２６】このようにして得られたサンプルの臨界温
度は、８８Ｋであり、液体窒素温度における臨界電流密
度は、２７２０００Ａ／ｃｍ２ であった。The critical temperature of the sample thus obtained was 88 K, and the critical current density at liquid nitrogen temperature was 272,000 A/cm2.
【００２７】他方、上述したサンプルにおいて、第１回
目の低速での成膜を省略した場合に得られたサンプルの
臨界温度は、８７Ｋであり、臨界電流密度は、１１５０
００Ａ／ｃｍ２ であった。On the other hand, in the above-mentioned sample, the critical temperature of the sample obtained when the first low-speed film formation was omitted was 87 K, and the critical current density was 1150 K.
00A/cm2.
【００２８】したがって、この実験例からもわかるよう
に、堆積の初期において成膜速度を低速化することによ
り、超電導特性が向上される。Therefore, as can be seen from this experimental example, the superconducting properties can be improved by slowing down the film formation rate in the initial stage of deposition.
Claims (3)
ターゲットより飛散した粒子を基材上に堆積させる、レ
ーザアブレーションによる成膜方法を用いる、酸化物超
電導薄膜の製造方法において、堆積の初期には、成膜速
度を比較的低速化し、その後、成膜速度を比較的高速化
することを特徴とする酸化物超電導薄膜の製造方法。[Claim 1] Irradiating a target with a laser beam,
In a method for producing an oxide superconducting thin film using laser ablation, in which particles scattered from a target are deposited on a substrate, the film formation rate is relatively slow in the early stage of deposition, and then A method for producing an oxide superconducting thin film characterized by relatively high speed.
用いられる、請求項１に記載の酸化物超電導薄膜の製造
方法。2. The method for producing an oxide superconducting thin film according to claim 1, wherein a long flexible base material is used as the base material.
ニア、安定化ジルコニア、アルミナ、イットリア、シリ
カもしくはチタニアのセラミックス、または、白金、金
、銀、アルミニウム、ニッケル、ハステロイ、インコネ
ル、インコロイもしくはステンレス鋼の金属材料から構
成される、請求項２に記載の酸化物超電導薄膜の製造方
法。3. The flexible substrate is made of partially stabilized zirconia, stabilized zirconia, alumina, yttria, silica or titania ceramics, or platinum, gold, silver, aluminum, nickel, Hastelloy, Inconel, Incoloy or The method for producing an oxide superconducting thin film according to claim 2, wherein the oxide superconducting thin film is made of a stainless steel metal material.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5066790 | 1990-03-01 | ||
| JP2-50667 | 1990-03-01 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04212214A true JPH04212214A (en) | 1992-08-03 |
| JP3110473B2 JP3110473B2 (en) | 2000-11-20 |
Family
ID=12865302
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP03030402A Expired - Fee Related JP3110473B2 (en) | 1990-03-01 | 1991-02-25 | Method for producing oxide superconducting thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3110473B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003091158A1 (en) * | 2002-04-26 | 2003-11-06 | Sumitomo Electric Industries, Ltd. | Oxide superconductive thin-film, process for producing the same and superconducting fault current limiter |
| WO2003091157A1 (en) * | 2002-04-26 | 2003-11-06 | Sumitomo Electric Industries, Ltd. | Process for producing oxide superconductive thin-film |
| JP2012500901A (en) * | 2008-08-25 | 2012-01-12 | ソルマテス・ベスローテン・フェンノートシャップ | How to deposit materials |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0652106U (en) * | 1992-12-24 | 1994-07-15 | ジャパンコミュニケーションアート株式会社 | magnet |
| JPH0664273U (en) * | 1993-02-08 | 1994-09-09 | 株式会社 広報ピーアール | Magnetic target achievement indicator |
-
1991
- 1991-02-25 JP JP03030402A patent/JP3110473B2/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003091158A1 (en) * | 2002-04-26 | 2003-11-06 | Sumitomo Electric Industries, Ltd. | Oxide superconductive thin-film, process for producing the same and superconducting fault current limiter |
| WO2003091157A1 (en) * | 2002-04-26 | 2003-11-06 | Sumitomo Electric Industries, Ltd. | Process for producing oxide superconductive thin-film |
| CN100379684C (en) * | 2002-04-26 | 2008-04-09 | 住友电气工业株式会社 | Process for producing oxide superconductive thin-film |
| JP2012500901A (en) * | 2008-08-25 | 2012-01-12 | ソルマテス・ベスローテン・フェンノートシャップ | How to deposit materials |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3110473B2 (en) | 2000-11-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6933065B2 (en) | High temperature superconducting thick films | |
| US5872080A (en) | High temperature superconducting thick films | |
| JPH0217685A (en) | Manufacture of metal oxide superconducting material layer using laser vaporization | |
| JPH04212214A (en) | Manufacture of oxide superconductive thin film | |
| EP0444698B1 (en) | Method of and apparatus for preparing oxide superconducting film | |
| US7560291B2 (en) | Method for fabrication of high temperature superconductors | |
| JP3447077B2 (en) | Thin film laminate, oxide superconducting conductor, and method for producing the same | |
| Balachandran et al. | Development of coated conductors by inclined substrate deposition | |
| Lichtenwalner et al. | Uniform deposition of YBa2Cu3O7− δ films over large areas using ion‐beam sputtering | |
| US7727934B2 (en) | Architecture for coated conductors | |
| JPH01309956A (en) | Production of oxide superconductor | |
| JP3522402B2 (en) | Method and apparatus for producing oxide superconducting conductor | |
| Gao et al. | Growth and characterization of zirconium oxide films | |
| JP2853164B2 (en) | Manufacturing method of oxide superconducting film | |
| JP4593300B2 (en) | Manufacturing method and manufacturing apparatus for oxide superconducting wire | |
| JP3856995B2 (en) | Oxide superconducting thin film manufacturing apparatus and oxide superconducting thin film manufacturing method | |
| JPH04214008A (en) | Production of oxide superconducting thin film | |
| KR20030049756A (en) | Step-flow mode growth method of metal oxide films at low temperature and synthesis method of nano wires therewith | |
| JP3995772B2 (en) | Oxide superconductor manufacturing equipment | |
| JP3705874B2 (en) | Oxide superconductor manufacturing equipment | |
| JP2817299B2 (en) | Preparation method of composite oxide superconducting thin film | |
| Ma et al. | Biaxially aligned template films fabricated by inclined-substrate deposition for YBCO-coated conductor applications | |
| Yoshimoto et al. | Atomic-scale Analysis of Laser MBE Growth of Oxide Thin Films by in situ Rheed and Caiciss | |
| JPH1180939A (en) | Formation of thin film | |
| JPH04175206A (en) | Method and apparatus for production of oxide superconducting thin film |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20000829 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20070914 Year of fee payment: 7 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080914 Year of fee payment: 8 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090914 Year of fee payment: 9 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090914 Year of fee payment: 9 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100914 Year of fee payment: 10 |
|
| LAPS | Cancellation because of no payment of annual fees |