JPH04209624A - Epoxy resin composition for photosemiconductor sealing - Google Patents
Epoxy resin composition for photosemiconductor sealingInfo
- Publication number
- JPH04209624A JPH04209624A JP40974290A JP40974290A JPH04209624A JP H04209624 A JPH04209624 A JP H04209624A JP 40974290 A JP40974290 A JP 40974290A JP 40974290 A JP40974290 A JP 40974290A JP H04209624 A JPH04209624 A JP H04209624A
- Authority
- JP
- Japan
- Prior art keywords
- epoxy resin
- resin composition
- anhydride
- present
- epoxy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003822 epoxy resin Substances 0.000 title claims abstract description 34
- 229920000647 polyepoxide Polymers 0.000 title claims abstract description 34
- 239000000203 mixture Substances 0.000 title claims abstract description 21
- 238000007789 sealing Methods 0.000 title description 2
- LGRFSURHDFAFJT-UHFFFAOYSA-N Phthalic anhydride Natural products C1=CC=C2C(=O)OC(=O)C2=C1 LGRFSURHDFAFJT-UHFFFAOYSA-N 0.000 claims abstract description 9
- JHIWVOJDXOSYLW-UHFFFAOYSA-N butyl 2,2-difluorocyclopropane-1-carboxylate Chemical compound CCCCOC(=O)C1CC1(F)F JHIWVOJDXOSYLW-UHFFFAOYSA-N 0.000 claims abstract description 8
- -1 tetraphenylphosphonium tetraphenylborate Chemical compound 0.000 claims abstract description 8
- 239000004065 semiconductor Substances 0.000 claims description 17
- 230000003287 optical effect Effects 0.000 claims description 15
- 239000000126 substance Substances 0.000 claims description 5
- 238000002156 mixing Methods 0.000 abstract description 7
- 239000003795 chemical substances by application Substances 0.000 abstract description 6
- 239000004841 bisphenol A epoxy resin Substances 0.000 abstract description 3
- 229920005989 resin Polymers 0.000 abstract description 3
- 239000011347 resin Substances 0.000 abstract description 3
- 238000000149 argon plasma sintering Methods 0.000 abstract description 2
- 125000003700 epoxy group Chemical group 0.000 abstract description 2
- VYKXQOYUCMREIS-UHFFFAOYSA-N methylhexahydrophthalic anhydride Chemical compound C1CCCC2C(=O)OC(=O)C21C VYKXQOYUCMREIS-UHFFFAOYSA-N 0.000 abstract description 2
- 150000008064 anhydrides Chemical class 0.000 abstract 1
- 239000003381 stabilizer Substances 0.000 abstract 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 9
- USFPINLPPFWTJW-UHFFFAOYSA-N tetraphenylphosphonium Chemical compound C1=CC=CC=C1[P+](C=1C=CC=CC=1)(C=1C=CC=CC=1)C1=CC=CC=C1 USFPINLPPFWTJW-UHFFFAOYSA-N 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 4
- WADSJYLPJPTMLN-UHFFFAOYSA-N 3-(cycloundecen-1-yl)-1,2-diazacycloundec-2-ene Chemical compound C1CCCCCCCCC=C1C1=NNCCCCCCCC1 WADSJYLPJPTMLN-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 2
- 238000002845 discoloration Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 229920003986 novolac Polymers 0.000 description 2
- MUTGBJKUEZFXGO-OLQVQODUSA-N (3as,7ar)-3a,4,5,6,7,7a-hexahydro-2-benzofuran-1,3-dione Chemical compound C1CCC[C@@H]2C(=O)OC(=O)[C@@H]21 MUTGBJKUEZFXGO-OLQVQODUSA-N 0.000 description 1
- KMOUUZVZFBCRAM-OLQVQODUSA-N (3as,7ar)-3a,4,7,7a-tetrahydro-2-benzofuran-1,3-dione Chemical compound C1C=CC[C@@H]2C(=O)OC(=O)[C@@H]21 KMOUUZVZFBCRAM-OLQVQODUSA-N 0.000 description 1
- PMUPSYZVABJEKC-UHFFFAOYSA-N 1-methylcyclohexane-1,2-dicarboxylic acid Chemical compound OC(=O)C1(C)CCCCC1C(O)=O PMUPSYZVABJEKC-UHFFFAOYSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- MWSKJDNQKGCKPA-UHFFFAOYSA-N 6-methyl-3a,4,5,7a-tetrahydro-2-benzofuran-1,3-dione Chemical compound C1CC(C)=CC2C(=O)OC(=O)C12 MWSKJDNQKGCKPA-UHFFFAOYSA-N 0.000 description 1
- 229930185605 Bisphenol Natural products 0.000 description 1
- BRLQWZUYTZBJKN-UHFFFAOYSA-N Epichlorohydrin Chemical group ClCC1CO1 BRLQWZUYTZBJKN-UHFFFAOYSA-N 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- 125000002723 alicyclic group Chemical group 0.000 description 1
- 239000004844 aliphatic epoxy resin Substances 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 239000004842 bisphenol F epoxy resin Substances 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- FPVGTPBMTFTMRT-NSKUCRDLSA-L fast yellow Chemical compound [Na+].[Na+].C1=C(S([O-])(=O)=O)C(N)=CC=C1\N=N\C1=CC=C(S([O-])(=O)=O)C=C1 FPVGTPBMTFTMRT-NSKUCRDLSA-L 0.000 description 1
- 125000000623 heterocyclic group Chemical group 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000011342 resin composition Substances 0.000 description 1
- 125000003003 spiro group Chemical group 0.000 description 1
Landscapes
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
［０００１１ [00011
【産業上の利用分野］本発明は、透明性に優れた光半導
体封止用エポキシ樹脂組成物に関する。
［０００２］
【従来の技術】発光ダイオード等の発光装置は、種々の
表示用として使用されている。この発光装置は、主に透
明エポキシ樹脂で封止されている。透明エポキシ樹脂の
多くは、酸無水物系を硬化剤とするエポキシ樹脂に、硬
化促進剤としてジアザビシクロウンデセン（ＤＢＵ）系
、イミダゾール系等が使用されている。
［０００３］Ｌかしながら、これらの硬化促進剤を用い
た場合、硬化時のエポキシ樹脂の温度が１３０℃以上に
なると、硬化物が着色する欠点がある。このため硬化物
の透明性を損なわないように低温で、長時間かけ硬化さ
せて、実用に供する樹脂強度を有するように成形されて
いる。
［０００４］[Industrial Field of Application] The present invention relates to an epoxy resin composition for encapsulating optical semiconductors with excellent transparency. [0002] Light emitting devices such as light emitting diodes are used for various display purposes. This light emitting device is mainly sealed with transparent epoxy resin. Most transparent epoxy resins use an acid anhydride-based curing agent and a diazabicycloundecene (DBU)-based, imidazole-based, etc. as a curing accelerator. [0003] However, when these curing accelerators are used, if the temperature of the epoxy resin during curing is 130° C. or higher, the cured product will be colored. For this reason, the resin is cured at a low temperature for a long time so as not to impair the transparency of the cured product, and is molded to have resin strength suitable for practical use. [0004]
【発明が解決しようとする課題】本発明は、上記の事情
に鑑みてなされたもので、透明性、広範囲な硬化温度条
件に対応できる、信頼性の高い光半導体封止用エポキシ
樹脂組成物を提供することを目的としている。
［０００５１OBJECTS OF THE INVENTION The present invention has been made in view of the above circumstances, and provides a highly reliable epoxy resin composition for optical semiconductor encapsulation that is transparent and can be used in a wide range of curing temperature conditions. is intended to provide. [00051
【課題を解決するための手段］本発明者らは、上記の目
的を達成しようと鋭意研究を重ねた結果、硬化促進剤と
してテトラフェニルホスホニウムテトラフェニルボレー
トを用いることによって上記目的が達成されることを見
いだし、本発明を完成したものである。
［０００６］すなわち、本発明は、
（Ａ）エポキシ樹脂、
（Ｂ）フタル酸系無水物及び
（Ｃ）次の化学式化１で示されるテトラフェニルホスホ
ニウムテトラフェニルボレート
［０００７］
【化１】
を必須成分としてなることを特徴とする光半導体封止用
エポキシ樹脂組成物である。
［０００８１以下、本発明を説明する。
［０００９１本発明に用いる（Ａ）エポキシ樹脂として
は、ビスフェノールＡ型エポキシ樹脂、ビスフェノール
ＡＤ型エポキシ樹脂、ビスフェノールＦ型エポキシ樹脂
、脂環式エポキシ樹脂等の透明性を有するエポキシ樹脂
が挙げられ、これらは単独又は２種以上混合して使用す
ることができる。また、本発明の目的に反しない範囲に
おいて他のエポキシ樹脂、例えばフェノールノボラック
型エポキシ樹脂、クレゾールノボラック型エポキシ樹脂
、含複素環式エポキシ樹脂、水添型ビスフェノールＡ型
エポキシ樹脂、脂肪族エポキシ樹脂、芳香族、脂肪族も
しくは脂環式のカルボン酸とエピクロルヒドリンとの反
応によって得られるエポキシ樹脂、スピロ環含有エポキ
シ樹脂等を適宜併用することができる。
［００１０１本発明に用いる （Ｂ）フタル酸系無水物
は、硬化剤として使用されるもので、ヘキサヒドロ無水
フタル酸、テトラヒドロ無水フタル酸、メチルへキサヒ
ドロ無水フタル酸、メチルテトラヒドロ無水フタル酸等
の無色又は淡黄色の酸無水物が挙げられ、これらは単独
又は２種以上混合して使用することができる。フタル酸
系無水物の配合割合は、前述した（Ａ）エポキシ樹脂の
エポキシ基１当量に対し、０．５〜１．８当量配合する
ことが望ましい。この範囲を外れると好ましい反応が行
われず、硬化物の特性に悪影響を及ぼし好ましくない。
［００１１１本発明に用いる（Ｃ）テトラフェニルホス
ホニウムテトラフェニルボレートは硬化促進剤として使
用されるもので、前記の化１で示されるものを使用する
。テトラフェニルホスホニウムテトラフェニルポレート
の配合割合は、前述したフタル酸系無水物１００重量部
に対して１．０〜５４０重量部配合することが望ましい
。配合量が１．０重量部未満では、樹脂組成物の初期硬
化速度が遅く実用に適さず、また、５．ＯＭ量部を超え
ると硬化物の信頼性に悪影響を及ぼし好ましくない。
［００１２］本発明の光半導体封止用エポキシ樹脂組成
物は、エポキシ樹脂、フタル酸系無水物、およびテトラ
フェニルホスホニウムテトラフェニルポレートを必須成
分とするが、本発明の目的に反しない限度において、ま
た必要に応じて変色防止剤、光散乱剤、染料等の他の成
分を添加配合することができる。こうした各成分は、そ
れらを均一に混合して、容易に光半導体封止用エポキシ
樹脂組成物を製造することができる。この組成物は、能
動もしくは受動の光半導体、その他の半導体素子の封止
用として好適なものである。
［００１３］[Means for Solving the Problem] As a result of intensive research aimed at achieving the above object, the present inventors have found that the above object can be achieved by using tetraphenylphosphonium tetraphenylborate as a curing accelerator. They discovered this and completed the present invention. [0006] That is, the present invention essentially comprises (A) an epoxy resin, (B) a phthalic anhydride, and (C) a tetraphenylphosphonium tetraphenylborate represented by the following chemical formula 1 [0007] [Chemical formula 1] This is an epoxy resin composition for encapsulating an optical semiconductor, characterized in that it is a component. [00081 The present invention will be described below. [00091 The epoxy resin (A) used in the present invention includes transparent epoxy resins such as bisphenol A epoxy resin, bisphenol AD epoxy resin, bisphenol F epoxy resin, and alicyclic epoxy resin. These can be used alone or in a mixture of two or more. In addition, other epoxy resins, such as phenol novolac type epoxy resins, cresol novolac type epoxy resins, heterocyclic epoxy resins, hydrogenated bisphenol A type epoxy resins, aliphatic epoxy resins, within the scope of the purpose of the present invention, Epoxy resins obtained by reacting aromatic, aliphatic or alicyclic carboxylic acids with epichlorohydrin, spiro ring-containing epoxy resins, etc. can be used in combination as appropriate. [00101 The phthalic anhydride (B) used in the present invention is used as a curing agent, and includes colorless phthalic anhydrides such as hexahydrophthalic anhydride, tetrahydrophthalic anhydride, methylhexahydrophthalic anhydride, and methyltetrahydrophthalic anhydride. or pale yellow acid anhydrides, which can be used alone or in a mixture of two or more. The blending ratio of the phthalic anhydride is preferably 0.5 to 1.8 equivalents per equivalent of the epoxy group of the epoxy resin (A). If it is outside this range, the desired reaction will not take place and the properties of the cured product will be adversely affected. [00111 The tetraphenylphosphonium tetraphenylborate (C) used in the present invention is used as a curing accelerator, and is represented by the chemical formula 1 above. The blending ratio of tetraphenylphosphonium tetraphenylporate is preferably 1.0 to 540 parts by weight per 100 parts by weight of the above-mentioned phthalic anhydride. If the blending amount is less than 1.0 parts by weight, the initial curing speed of the resin composition will be slow, making it unsuitable for practical use. Exceeding the amount of OM is not preferable since it adversely affects the reliability of the cured product. [0012] The epoxy resin composition for encapsulating optical semiconductors of the present invention contains an epoxy resin, a phthalic anhydride, and tetraphenylphosphonium tetraphenyl porate as essential components, but within the range not contrary to the purpose of the present invention, Further, other components such as a discoloration inhibitor, a light scattering agent, and a dye may be added and blended as necessary. By uniformly mixing these components, an epoxy resin composition for encapsulating an optical semiconductor can be easily produced. This composition is suitable for encapsulating active or passive optical semiconductors and other semiconductor devices. [0013]
【作用】本発明の光半導体封止用エポキシ樹脂組成物は
、硬化促進剤としてテトラフェニルホスホニウムテトラ
フェニルポレートを所定の割合用いたことによって、優
れた透明性と、従来光半導体封止には困難であった１３
０℃以上にわたる広範囲な適合硬化温度を付与すること
ができたものである。
［００１４］[Function] The epoxy resin composition for encapsulating optical semiconductors of the present invention uses a predetermined proportion of tetraphenylphosphonium tetraphenyl porate as a curing accelerator, and thus has excellent transparency and is difficult to encapsulate conventional optical semiconductors. It was 13
It was possible to provide a wide range of compatible curing temperatures over 0°C. [0014]
【実施例】次に本発明を実施例によって具体的に説明す
るが、本発明はこれらの実施例によって限定されるもの
ではない。以下の実施例および比較例において「部」と
は「重量部」を意味する。
［００１５］実施例１
ビスフェノールＡ型エポキシ樹脂のエピコート８２８（
油化シェルエポキシ社製、商品名）１００部に硬化剤の
メチルへキサヒドロフタル酸１００部を加え、更に硬化
促進剤としてテトラフェニルホスホニウムテトラフェニ
ルボレート１部を加えて均一に混合して光半導体封止用
エポキシ樹脂組成物を製造した。
［００１６］実施例２〜３
表１に示した組成によって硬化促進剤の配合割合を変え
た以外は実施例１と同様にして光半導体封止用エポキシ
樹脂組成物を製造した。
［００１７］比較例 １
＊
＊実施例１においてテトラフェニルホスホニウムテトラ
フェニルポレートの替わりに１，８−ジアザ−ビシクロ
（５゜４．０）ウンデセン−７を用いた以外はすべて実
施例１同様にして光半導体封止用エポキシ樹脂組成物を
製造した。
［００１８］比較例２
実施例１においてテトラフェニルホスホニウムテトラフ
ェニルポレートの替わりに１−シアンエチル−４−イミ
ダゾールを用いた以外はすべて実施例１と同様にして光
半導体封止用エポキシ樹脂組成物を製造した。
［００１９］実施例１〜３および比較例１〜２で製造し
た光半導体封止用エポキシ樹脂組成物を用いて、半導体
素子を封止して成形品（封止品）を得た。この成形品に
ついて硬化温度条件による変色性の試験を行ったのでそ
の結果を表１に示したが、いずれも本発明が優れており
、本発明の効果を確認することができた。[Examples] Next, the present invention will be specifically explained with reference to Examples, but the present invention is not limited to these Examples. In the following examples and comparative examples, "parts" means "parts by weight." [0015] Example 1 Bisphenol A epoxy resin Epicoat 828 (
100 parts of methyl hexahydrophthalic acid as a hardening agent was added to 100 parts of Yuka Shell Epoxy Co., Ltd. (trade name), and 1 part of tetraphenylphosphonium tetraphenylborate was added as a hardening accelerator, and the mixture was uniformly mixed to form an optical semiconductor. An epoxy resin composition for sealing was manufactured. [0016] Examples 2 to 3 Epoxy resin compositions for optical semiconductor encapsulation were produced in the same manner as in Example 1, except that the blending ratio of the curing accelerator was changed according to the composition shown in Table 1. [0017] Comparative Example 1 * *All procedures were carried out in the same manner as in Example 1 except that 1,8-diaza-bicyclo(5°4.0) undecene-7 was used instead of tetraphenylphosphonium tetraphenylporate in Example 1. An epoxy resin composition for encapsulating optical semiconductors was manufactured. [0018] Comparative Example 2 An epoxy resin composition for encapsulating optical semiconductors was prepared in the same manner as in Example 1 except that 1-cyanethyl-4-imidazole was used instead of tetraphenylphosphonium tetraphenylporate in Example 1. Manufactured. [0019] Using the epoxy resin compositions for encapsulating optical semiconductors produced in Examples 1 to 3 and Comparative Examples 1 to 2, semiconductor elements were encapsulated to obtain molded products (sealed products). This molded article was tested for discoloration depending on curing temperature conditions, and the results are shown in Table 1. The present invention was superior in all cases, confirming the effects of the present invention.
【００２０】[0020]
【表１】
［００２１１
【発明の効果］以上の説明および表１の結果から明らか
なように、本発明の光半導体封止用エポキシ樹脂組成物
は、透明性に優れ、広範囲な硬化温度条件に対応する信
頼性の高いものである。[Table 1] [Effects of the Invention] As is clear from the above explanation and the results in Table 1, the epoxy resin composition for encapsulating optical semiconductors of the present invention has excellent transparency and is resistant to a wide range of curing temperature conditions. It is highly reliable.
Claims (1)
ニウムテトラフェニルボ レート 【化１】 ▲数式、化学式、表等があります▼ を必須成分としてなることを特徴とする光半導体封止用
エポキシ樹脂組成物。[Claim 1] (A) Epoxy resin, (B) Phthalic anhydride, and (C) Tetraphenylphosphonium tetraphenylborate represented by the following chemical formula 1 [Claim 1] ▲ Numerical formulas, chemical formulas, tables, etc. ▼ An epoxy resin composition for encapsulating optical semiconductors, characterized by comprising as an essential component.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP40974290A JPH04209624A (en) | 1990-12-10 | 1990-12-10 | Epoxy resin composition for photosemiconductor sealing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP40974290A JPH04209624A (en) | 1990-12-10 | 1990-12-10 | Epoxy resin composition for photosemiconductor sealing |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04209624A true JPH04209624A (en) | 1992-07-31 |
Family
ID=18519029
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP40974290A Pending JPH04209624A (en) | 1990-12-10 | 1990-12-10 | Epoxy resin composition for photosemiconductor sealing |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04209624A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002019440A1 (en) * | 2000-09-01 | 2002-03-07 | General Electric Company | Encapsulants for solid state devices |
| EP1285938A1 (en) * | 2001-08-23 | 2003-02-26 | General Electric Company | Epoxy resin encapsulation compositions |
| US6617400B2 (en) * | 2001-08-23 | 2003-09-09 | General Electric Company | Composition of cycloaliphatic epoxy resin, anhydride curing agent and boron catalyst |
| WO2005092980A1 (en) * | 2004-03-25 | 2005-10-06 | Matsushita Electric Works Ltd. | Epoxy resin composition for sealing photosemiconductor element and photosemiconductor device |
| US7112636B2 (en) | 2002-12-06 | 2006-09-26 | Nichia Corporation | Epoxy resin composition |
| US20100104864A1 (en) * | 2007-04-05 | 2010-04-29 | Tesa Se | Thermally crosslinking polyacrylates and method for producing the same |
-
1990
- 1990-12-10 JP JP40974290A patent/JPH04209624A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002019440A1 (en) * | 2000-09-01 | 2002-03-07 | General Electric Company | Encapsulants for solid state devices |
| EP1285938A1 (en) * | 2001-08-23 | 2003-02-26 | General Electric Company | Epoxy resin encapsulation compositions |
| US6617401B2 (en) | 2001-08-23 | 2003-09-09 | General Electric Company | Composition comprising cycloaliphatic epoxy resin, 4-methylhexahydrophthalic anhydride curing agent and boron catalyst |
| US6617400B2 (en) * | 2001-08-23 | 2003-09-09 | General Electric Company | Composition of cycloaliphatic epoxy resin, anhydride curing agent and boron catalyst |
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| US6878783B2 (en) * | 2001-08-23 | 2005-04-12 | General Electric Company | Solid state device with encapsulant of cycloaliphatic epoxy resin, anhydride, and boron catalyst |
| US7112636B2 (en) | 2002-12-06 | 2006-09-26 | Nichia Corporation | Epoxy resin composition |
| WO2005092980A1 (en) * | 2004-03-25 | 2005-10-06 | Matsushita Electric Works Ltd. | Epoxy resin composition for sealing photosemiconductor element and photosemiconductor device |
| US20100104864A1 (en) * | 2007-04-05 | 2010-04-29 | Tesa Se | Thermally crosslinking polyacrylates and method for producing the same |
| US8802777B2 (en) * | 2007-04-05 | 2014-08-12 | Tesa Se | Thermally crosslinking polyacrylates and method for producing the same |
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