JPH04209587A - Metallic substrate and its manufacture - Google Patents
Metallic substrate and its manufactureInfo
- Publication number
- JPH04209587A JPH04209587A JP40538190A JP40538190A JPH04209587A JP H04209587 A JPH04209587 A JP H04209587A JP 40538190 A JP40538190 A JP 40538190A JP 40538190 A JP40538190 A JP 40538190A JP H04209587 A JPH04209587 A JP H04209587A
- Authority
- JP
- Japan
- Prior art keywords
- insulating layer
- layer
- metal
- substrate
- oxide layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 45
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000000463 material Substances 0.000 claims abstract description 26
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 24
- 239000000919 ceramic Substances 0.000 claims abstract description 21
- 239000002245 particle Substances 0.000 claims abstract description 18
- 239000011521 glass Substances 0.000 claims abstract description 15
- 150000004703 alkoxides Chemical class 0.000 claims abstract description 6
- 239000000843 powder Substances 0.000 claims abstract description 5
- 229910052751 metal Inorganic materials 0.000 claims description 36
- 239000002184 metal Substances 0.000 claims description 36
- 150000004706 metal oxides Chemical class 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 14
- 238000010304 firing Methods 0.000 claims description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052593 corundum Inorganic materials 0.000 abstract description 4
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract description 4
- 239000003960 organic solvent Substances 0.000 abstract description 2
- 230000005855 radiation Effects 0.000 abstract 1
- 230000017525 heat dissipation Effects 0.000 description 5
- 230000035939 shock Effects 0.000 description 5
- 210000003298 dental enamel Anatomy 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- -1 aluminum alkoxide Chemical class 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Landscapes
- Insulating Bodies (AREA)
- Surface Heating Bodies (AREA)
- Laminated Bodies (AREA)
- Insulated Metal Substrates For Printed Circuits (AREA)
Abstract
Description
［０００１］ [0001]
【産業上の利用分野】本発明は、金属基板及びその製造
方法に関し、特に厚膜電気回路や電気ヒータ等、高強度
或いは高耐熱性を必要とする分野に用いるのに好適な金
属基板及びその製造方法に関する。
［０００２］[Field of Industrial Application] The present invention relates to a metal substrate and a method for manufacturing the same, and in particular to a metal substrate and its manufacturing method suitable for use in fields that require high strength or high heat resistance, such as thick film electric circuits and electric heaters. Regarding the manufacturing method. [0002]
【従来の技術】従来から、機械的衝撃及び熱が加わるよ
うな用途に、セラミック単体からなる基板に代えて機械
的強度や熱伝導性に優れた金属基板を用いることが提案
されている。この金属基板を電気回路用基板として使用
するために、金属からなる基材層の表面にガラス材から
なる絶縁層を形成したほうろう基板がある。
［０００３］2. Description of the Related Art Conventionally, it has been proposed to use a metal substrate with excellent mechanical strength and thermal conductivity in place of a substrate made of a single ceramic for applications where mechanical shock and heat are applied. In order to use this metal substrate as an electric circuit board, there is an enamel substrate in which an insulating layer made of glass material is formed on the surface of a base material layer made of metal. [0003]
【発明が解決しようとする課題】しかしながら、はうろ
う基板にあっては、ガラスからなる絶縁層の強度、靭性
がセラミック単体からなる基板に比較して劣る問題があ
るばかりでなく、異なる種類の材料同士を接着しており
、かつ基材層と絶縁層との熱膨脹係数が異なることから
両者間に所望の密着性を得ることができず、耐熱衝撃性
が比較的低い問題があった。また、上記密着性の問題か
ら金属基板として望まれる衝撃強度を得ることができな
かった。加えて、ガラス材の熱伝導性が比較的低いこと
から金属基板としては高い熱伝導性を得ることができな
かった。
［０００４］このような従来技術の課題に鑑み、本発明
の主な目的は、基材層と絶縁層との間の密着性が向上し
、耐衝撃性及び耐熱衝撃性が改善されると共に放熱性の
高い金属基板及びその製造方法を提供することにある。
［０００５］[Problems to be Solved by the Invention] However, in the case of a floating substrate, there is a problem that not only is the strength and toughness of the insulating layer made of glass inferior to that of a substrate made of a single ceramic, but also that there are Since the materials are bonded to each other and the base layer and the insulating layer have different coefficients of thermal expansion, it is impossible to obtain the desired adhesion between them, resulting in a relatively low thermal shock resistance. Furthermore, due to the adhesion problem described above, it was not possible to obtain the impact strength desired for a metal substrate. In addition, since the thermal conductivity of the glass material is relatively low, high thermal conductivity could not be obtained as a metal substrate. [0004] In view of the problems of the prior art, the main objects of the present invention are to improve the adhesion between the base material layer and the insulating layer, improve impact resistance and thermal shock resistance, and improve heat dissipation. An object of the present invention is to provide a metal substrate with high properties and a method for manufacturing the same. [0005]
【課題を解決するための手段】このような目的は、本発
明によれば、金属からなる基材層と、セラミック粒子が
分散したガラス材からなる絶縁層とをこの順に積層して
なることを特徴とする金属基板及び金属からなる基材層
と、絶縁層とをこの順に積層する金属基板の製造方法で
あって、セラミック粒子及びガラス粉末をビヒクルに均
一に分散してなるペーストを前記基材層の表面に塗布し
、焼成することにより該絶縁層を形成する過程を有する
ことを特徴とする金属基板の製造方法を提供することに
より達成される。特に、前記金属基板に於ける前記基材
層と前記絶縁層との間に金属酸化物層が介在すると良く
、前記金属基板の製造方法に於ける前記絶縁層の形成過
程の前に、前記基材層の表面に該基材層とは別の部材か
らなる金属酸化物層を形成する過程を有し、前記絶縁層
を前記金属酸化物層の表面に形成すると良い。
［０００６］[Means for Solving the Problems] According to the present invention, this object is achieved by laminating in this order a base material layer made of metal and an insulating layer made of glass material in which ceramic particles are dispersed. A metal substrate and a method for manufacturing a metal substrate in which a base material layer made of metal and an insulating layer are laminated in this order, wherein a paste made by uniformly dispersing ceramic particles and glass powder in a vehicle is used as the base material. This is achieved by providing a method for manufacturing a metal substrate, which comprises a process of forming the insulating layer by coating the surface of the layer and firing it. In particular, a metal oxide layer may be interposed between the base material layer and the insulating layer in the metal substrate, and the metal oxide layer may be interposed between the base material layer and the insulating layer in the metal substrate manufacturing method. It is preferable to include a step of forming a metal oxide layer made of a member different from the base material layer on the surface of the material layer, and form the insulating layer on the surface of the metal oxide layer. [0006]
【作用】このように、絶縁層にガラスよりも熱伝導性の
高いセラミック粒子を分散させることにより放熱性が向
上し、分散させるセラミック粒子の種類と割合を選択す
れば基板表面の特性を所望に応じて設定でき、例えば基
材層の金属の熱膨脹係数に近い熱膨脹係数を絶縁層に持
たせることができ、温度変化時の密着性が向上する。ま
た、基材層と絶縁層との間に金属酸化物層を設ければ両
者間の密着性が一層が向上する。また、金属酸化物層を
、金属アルコキシド溶液を基材層の表面に塗布、焼成す
ることにより形成すれば、金属酸化物層形成過程が簡便
になる。
［０００７］[Effect] In this way, heat dissipation is improved by dispersing ceramic particles with higher thermal conductivity than glass in the insulating layer, and by selecting the type and proportion of ceramic particles to be dispersed, desired characteristics of the substrate surface can be achieved. For example, the insulating layer can have a coefficient of thermal expansion close to that of the metal of the base layer, which improves adhesion when the temperature changes. Furthermore, if a metal oxide layer is provided between the base material layer and the insulating layer, the adhesion between them is further improved. Further, if the metal oxide layer is formed by applying a metal alkoxide solution to the surface of the base material layer and baking it, the process of forming the metal oxide layer becomes simple. [0007]
【実施例】以下、本発明の好適実施例を添付の図面につ
いて詳しく説明する。図１は本発明が適用された第１の
実施例を示す厚膜電気回路用基板の模式的斜視図であり
、図２は図１の側断面図である。これら図１及び図２に
併せて示すように、基板１は、−フェライト系ステンレ
ス（ＳＵＳ４３０など）からなる金属基材層２と、この
基板２の表面に形成されたδ−Ａ１２Ｏ３からなる厚さ
数μｍ以下の透明な金属酸化物層３と、Ａｌ２Ｏ３であ
って良いセラミック粒子４ａが分散するガラスからなる
厚さ２５μｍの絶縁層４とを有し、この絶縁層４の表面
に所望の配線パターン５が形成されている。
［０００８］実際に基板１を形成するには、まず、金属
基材層２の表面に金属アルコキシド溶液（アルミナクリ
アーゾル ５Ｈ−５，商品名二川研ファインケミカル株
式会社製）を塗布し、この基板１を室温〜２００℃程度
で乾燥させた後、大気中にて毎分２０℃の速度で昇温さ
せ６００℃にて１０分間保持し、その後毎分２０℃の速
度で冷却することにより金属酸化物層３を焼成している
。
［０００９］次に、この金属酸化物層３の表面に、セラ
ミック（Ａ１２Ｏ３）粒子と鉛ホウケイ酸系結晶化ガラ
ス粉末とを１対１の割合で有機溶剤からなるビヒクル中
に均一に分散させたペーストをスクリーン印刷を３回行
う二とにより塗布し、乾燥させた後、大気中にて毎分的
３５℃の速度で昇温させて９１０℃にて１０分間保持し
、その後毎分３５℃の速度で冷却させることにより絶縁
層４を焼成している。
［００１０１ここで、本実施例では金属酸化物層３を６
００℃で焼成したが、実際には６００℃〜１０００℃の
範囲で焼成して良い。また、絶縁層４も本実施例では９
１０℃にて焼成したが、８００℃〜１０００℃の範囲で
５分間〜３０分間焼成すれば良い。更に、本実施例では
絶縁層４の厚さを２５μｍとしたが、例えばスクリーン
印刷の回数を変えることにより数十μｍ〜数百μｍの範
囲で任意に設定して良い。加えて、本実施例ではセラミ
ック（Ａｌ２Ｏ３）粒子と鉛ホウケイ酸系結晶化ガラス
粉末とを１対１の割合で混ぜたが、実際には所望の基板
表面特性に応じた割合として良い。このようにして形成
した金属基板１について、衝撃強度、耐熱性、絶縁耐圧
及び熱伝導性の試験を行い、その結果を表１に示す。ま
た、基材層と絶縁層との密着性、耐熱衝撃性を従来のは
＊＊うろう基板と比較した結果及び放熱性を従来のセラ
ミック基板、はうろう基板と比較した結果を表２に示す
。
［００１１］表１
［００１２］
表２
［００１３１本発明に基づく金属基板は、表１に於ける
衝撃強度に於て実際には従来のほうろう基板に比較して
２倍以上であった。また、表２に良く示すように、本発
明に基づく金属基板は、従来のセラミック基板及びほう
ろう基板に比較して特に放熱性に於て優れていることが
わかる。
（００１４］尚、本実施例では、金属アルコキシド溶液
としてアルミニウムアルコキシド溶液を塗布したが、チ
タンアルコキシド溶液を用いればＴｉＯ２からなる金属
酸化層が形成される。また、本実施例ではセラミック粒
子４ａとしてＡｌ２Ｏ３粒子を用いたが、実際にはそれ
以外にＭｇＯ，Ｂｅｄ、Ｓｉ３Ｎ４、ＳｉＣ，ＡＩＮ等
、様々なセラミック材料を用いることができる。この場
合、例えばＳｉ３Ｎ４等を用いれば耐摩耗性の高い基板
が得られ、ＡＩＮ、ＢｅＯ等を用いれば熱伝導性の高い
基板が得られる。このセラミック粒子の種類、混合する
割合を変化させることにより所望に応じた基板表面の特
性を得ることができると共に基材層との密着性などを改
善することができる。更に、本実施例では金属アルコキ
シドを焼成して金属酸化物層を得たが、ＰＶＤ法、ＣＶ
Ｄ法、イオンスパッタリング法、陽極酸化法等により金
属酸化物層を形成しても良い。
［００１５］図３は第２の実施例を示す図１と同様な模
式的斜視図であり、本発明を発熱回路を有する電気ヒー
タ用基板１１に適用している。本実施例に於ても第１の
実施例と同様に金属基材層１２の表面に金属酸化物層１
３が形成され、その表面にセラミック粒子が分散された
ガラスからなる絶縁層１４が形成されている。そして、
この絶縁層の表面に発熱回路１５がパターン形成されて
いる。それ以外の構成は第１の実施例と同様である。
［００１６］DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the present invention will now be described in detail with reference to the accompanying drawings. FIG. 1 is a schematic perspective view of a thick film electrical circuit board showing a first embodiment to which the present invention is applied, and FIG. 2 is a side sectional view of FIG. 1. As shown in FIGS. 1 and 2, the substrate 1 includes a metal base material layer 2 made of -ferritic stainless steel (SUS430, etc.) and a thickness made of δ-A12O3 formed on the surface of the substrate 2. It has a transparent metal oxide layer 3 with a thickness of several μm or less, and an insulating layer 4 with a thickness of 25 μm made of glass in which ceramic particles 4a, which may be Al2O3, are dispersed, and a desired wiring pattern is formed on the surface of this insulating layer 4. 5 is formed. [0008] To actually form the substrate 1, first, a metal alkoxide solution (Alumina Clear Sol 5H-5, trade name manufactured by Futagawaken Fine Chemical Co., Ltd.) is applied to the surface of the metal base layer 2, and this substrate 1 is After drying at room temperature to about 200°C, the metal oxide is heated at a rate of 20°C per minute in the air, held at 600°C for 10 minutes, and then cooled at a rate of 20°C per minute. Layer 3 is being fired. [0009] Next, on the surface of this metal oxide layer 3, ceramic (A12O3) particles and lead borosilicate crystallized glass powder were uniformly dispersed in a 1:1 ratio in a vehicle made of an organic solvent. The paste was applied by screen printing three times and, after drying, was heated at a rate of 35°C per minute in air, held at 910°C for 10 minutes, and then heated at a rate of 35°C per minute in air. The insulating layer 4 is fired by cooling at a high speed. [00101 Here, in this example, the metal oxide layer 3 is
Although the temperature was set at 00°C, the temperature may actually be 600°C to 1000°C. Further, the insulating layer 4 is also 9 in this embodiment.
Although firing was performed at 10°C, firing may be performed in the range of 800°C to 1000°C for 5 minutes to 30 minutes. Furthermore, although the thickness of the insulating layer 4 was set to 25 μm in this embodiment, it may be arbitrarily set within the range of several tens of μm to several hundreds of μm, for example, by changing the number of times of screen printing. In addition, in this example, ceramic (Al2O3) particles and lead borosilicate crystallized glass powder were mixed at a ratio of 1:1, but in reality, the ratio may be adjusted depending on the desired substrate surface characteristics. The metal substrate 1 thus formed was tested for impact strength, heat resistance, dielectric strength and thermal conductivity, and the results are shown in Table 1. In addition, Table 2 shows the results of comparing the adhesion between the base material layer and the insulating layer and the thermal shock resistance with the conventional HA** URO board, and the results of comparing the heat dissipation with the conventional ceramic substrate and the LOWER board. show. [0011] Table 1 [0012] Table 2 [00131 The impact strength of the metal substrate according to the present invention in Table 1 was actually more than twice that of the conventional enamel substrate. Furthermore, as clearly shown in Table 2, the metal substrate according to the present invention is particularly superior in heat dissipation compared to conventional ceramic substrates and enamel substrates. (0014) In this example, an aluminum alkoxide solution was applied as the metal alkoxide solution, but if a titanium alkoxide solution is used, a metal oxide layer consisting of TiO2 is formed.Also, in this example, the ceramic particles 4a are Al2O3 Although particles were used, in reality, various other ceramic materials such as MgO, Bed, Si3N4, SiC, AIN, etc. can be used.In this case, for example, if Si3N4 etc. is used, a highly wear-resistant substrate can be obtained. By using AIN, BeO, etc., a substrate with high thermal conductivity can be obtained. By changing the type of ceramic particles and the mixing ratio, desired substrate surface characteristics can be obtained, and the base material layer can be Furthermore, in this example, the metal alkoxide was fired to obtain the metal oxide layer, but the PVD method, CVD method, etc.
The metal oxide layer may be formed by the D method, ion sputtering method, anodic oxidation method, or the like. [0015] FIG. 3 is a schematic perspective view similar to FIG. 1 showing a second embodiment, in which the present invention is applied to an electric heater substrate 11 having a heating circuit. In this embodiment, as in the first embodiment, a metal oxide layer 1 is formed on the surface of the metal base layer 12.
3 is formed, and an insulating layer 14 made of glass in which ceramic particles are dispersed is formed on the surface thereof. and,
A heating circuit 15 is patterned on the surface of this insulating layer. The rest of the configuration is the same as the first embodiment. [0016]
【発明の効果】このように本発明によれば、絶縁層にセ
ラミック粒子を分散させたガラスを用いることにより、
放熱性が向上する。また、分散させるセラミック粒子を
選択して基板表面の特性を所望に応じて設定できること
から、基材層の金属の熱膨脹係数に近い熱膨脹係数を絶
縁層に持たせることができ、温度変化時の密着性が向上
する。また、上記基材層と絶縁層との間に金属酸化物層
を介在させることにより両者間の密着性が一層向上し、
衝撃強度、耐熱衝撃性が向上する。以上のことから本発
明の効果は極めて大である。[Effects of the Invention] According to the present invention, by using glass in which ceramic particles are dispersed in the insulating layer,
Improves heat dissipation. In addition, since the characteristics of the substrate surface can be set as desired by selecting the ceramic particles to be dispersed, it is possible to give the insulating layer a thermal expansion coefficient close to that of the metal of the base material layer, which allows for close contact during temperature changes. Improves sex. In addition, by interposing a metal oxide layer between the base material layer and the insulating layer, the adhesion between the two is further improved.
Impact strength and thermal shock resistance are improved. From the above, the effects of the present invention are extremely large.
【図１】本発明が適用された第１の実施例を示す厚膜電
気回路用基板の模式的斜視図である。FIG. 1 is a schematic perspective view of a thick film electric circuit board showing a first embodiment to which the present invention is applied.
【図２】図１の要部側断面図である。FIG. 2 is a side sectional view of the main part of FIG. 1;
【図３１本発明が適用された第２の実施例を示す電気ヒ
ータ用基板の模式的斜視図である。
【符号の説明】
１ 基板
２ 基材層
３ 金属酸化物層
４ 絶縁層
４ａ セラミック粒子
５ 配線パターン
１１ 基板
１２ 基材層
１３ 金属酸化物層
１４ 絶縁層
１５ 配線パターンFIG. 31 is a schematic perspective view of an electric heater substrate showing a second embodiment to which the present invention is applied. [Explanation of symbols] 1 Substrate 2 Base material layer 3 Metal oxide layer 4 Insulating layer 4a Ceramic particles 5 Wiring pattern 11 Substrate 12 Base material layer 13 Metal oxide layer 14 Insulating layer 15 Wiring pattern
Claims (5)
が分散したガラス材からなる絶縁層とをこの順に積層し
てなることを特徴とする金属基板。1. A metal substrate comprising a base layer made of metal and an insulating layer made of glass material in which ceramic particles are dispersed, which are laminated in this order.
化物層が介在することを特徴とする請求項１に記載の金
属基板。2. The metal substrate according to claim 1, wherein a metal oxide layer is interposed between the base material layer and the insulating layer.
順に積層する金属基板の製造方法であって、セラミック
粒子及びガラス粉末をビヒクルに均一に分散してなるペ
ーストを前記基材層の表面に塗布し、焼成することによ
り該絶縁層を形成する過程を有することを特徴とする金
属基板の製造方法。3. A method for manufacturing a metal substrate in which a base layer made of metal and an insulating layer are laminated in this order, the base layer comprising a paste made by uniformly dispersing ceramic particles and glass powder in a vehicle. 1. A method for manufacturing a metal substrate, comprising the step of forming the insulating layer by applying the insulating layer to the surface of the insulating layer and firing the insulating layer.
層の表面に該基材層とは別の部材からなる金属酸化物層
を形成する過程を有し、前記絶縁層を前記金属酸化物層
の表面に形成することを特徴とする請求項３に記載の金
属基板の製造方法。4. Before the step of forming the insulating layer, there is a step of forming a metal oxide layer made of a material different from the base layer on the surface of the base layer; 4. The method for manufacturing a metal substrate according to claim 3, wherein the step is formed on a surface of a metal oxide layer.
記基材層の表面に金属アルコキシド溶液を塗布し、焼成
する過程からなることを特徴とする請求項４に記載の金
属基板の製造方法。5. The method of producing a metal substrate according to claim 4, wherein the step of forming the metal oxide layer comprises a step of applying a metal alkoxide solution to the surface of the base layer and firing it. Method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP40538190A JP3090962B2 (en) | 1990-12-05 | 1990-12-05 | Metal substrate and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP40538190A JP3090962B2 (en) | 1990-12-05 | 1990-12-05 | Metal substrate and method of manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04209587A true JPH04209587A (en) | 1992-07-30 |
| JP3090962B2 JP3090962B2 (en) | 2000-09-25 |
Family
ID=18514985
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP40538190A Expired - Fee Related JP3090962B2 (en) | 1990-12-05 | 1990-12-05 | Metal substrate and method of manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3090962B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100800119B1 (en) * | 2005-05-18 | 2008-01-31 | 주식회사 에너지코리아 | Electrical heating apparatus radiating radiant heat |
| JP2008521200A (en) * | 2004-11-23 | 2008-06-19 | フェロ テクニーク ホールディング ビー．ヴイ． | Enamel compositions for application as dielectrics and uses of such enamel compositions |
-
1990
- 1990-12-05 JP JP40538190A patent/JP3090962B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008521200A (en) * | 2004-11-23 | 2008-06-19 | フェロ テクニーク ホールディング ビー．ヴイ． | Enamel compositions for application as dielectrics and uses of such enamel compositions |
| KR100800119B1 (en) * | 2005-05-18 | 2008-01-31 | 주식회사 에너지코리아 | Electrical heating apparatus radiating radiant heat |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3090962B2 (en) | 2000-09-25 |
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