JPH04209443A - Photoelectric surface evaporation source and x-ray image tube - Google Patents
Photoelectric surface evaporation source and x-ray image tubeInfo
- Publication number
- JPH04209443A JPH04209443A JP34027790A JP34027790A JPH04209443A JP H04209443 A JPH04209443 A JP H04209443A JP 34027790 A JP34027790 A JP 34027790A JP 34027790 A JP34027790 A JP 34027790A JP H04209443 A JPH04209443 A JP H04209443A
- Authority
- JP
- Japan
- Prior art keywords
- evaporation source
- photocathode
- image tube
- ray image
- filament
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000008020 evaporation Effects 0.000 title claims abstract description 54
- 238000001704 evaporation Methods 0.000 title claims abstract description 54
- 229910052751 metal Inorganic materials 0.000 claims abstract description 7
- 239000002184 metal Substances 0.000 claims abstract description 7
- 230000002950 deficient Effects 0.000 abstract description 2
- 230000035945 sensitivity Effects 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910052783 alkali metal Inorganic materials 0.000 description 2
- 150000001340 alkali metals Chemical class 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012634 fragment Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
Abstract
Description
【発明の詳細な説明】
［発明の目的］
（産業上の利用分野）
この発明は、例えばＸ線イメージ管の光電面を形成する
場合に使用して好適な光電面蒸発源およびＸ線イメージ
管に関する。Detailed Description of the Invention [Object of the Invention] (Industrial Application Field) The present invention provides a photocathode evaporation source and an X-ray image tube suitable for use in forming a photocathode of an X-ray image tube, for example. Regarding.
（従来の技術）
Ｘ線イメージ管の光電面を形成する場合に使用する蒸発
源としては、従来、第４図に示すようにモリブデン板１
の凹部２に溶融アンチモン（以下、Ｓｂと言う）３が融
着されたものや、第５図に示すように白金被覆モリブデ
ン線４に溶融Ｓｂ５が融着されたものがある。(Prior Art) Conventionally, as an evaporation source used to form the photocathode of an X-ray image tube, a molybdenum plate 1 is used as shown in FIG.
There is one in which molten antimony (hereinafter referred to as Sb) 3 is fused to the recess 2 of the wire, and another in which molten Sb 5 is fused to a platinum-coated molybdenum wire 4 as shown in FIG.
このような蒸発源は、使用に当たって例えばＸ線イメー
ジ管の管内に複数個配置されるが、通電加熱により温度
上昇し、真空中においてＳｂ３．５は蒸発し、Ｘ線イメ
ージ管の光電面形成材料のＳｂ薄膜となる。このＳｂ薄
膜はアルカリ金属等と化合物を形成して光電面となり、
Ｘｌｊイメージ管のほか撮像管、光電管等の光電面形成
にも用いられる。In use, a plurality of such evaporation sources are placed, for example, inside the tube of an X-ray image tube, but the temperature rises due to heating with electricity, and Sb3.5 evaporates in a vacuum, causing the photocathode forming material of the X-ray image tube to rise. This results in an Sb thin film. This Sb thin film forms a compound with an alkali metal etc. and becomes a photocathode,
In addition to Xlj image tubes, it is also used to form photocathode surfaces in image pickup tubes, phototubes, etc.
（発明が解決しようとする課題）
上記のような従来の蒸発源を使用した場合、光電面形成
時にＳｂ３．５の多数の破片が落ち、撮像管等の光電面
品位を低下させる欠点がある。(Problems to be Solved by the Invention) When the conventional evaporation source as described above is used, there is a drawback that a large number of Sb3.5 fragments fall during the formation of a photocathode, degrading the quality of the photocathode of an image pickup tube or the like.
又、管内に蒸発源を複数個配設し、通電加熱によりＳｂ
蒸着を行なうわけであるが、この場合、蒸発源毎に加熱
温度が異なり、それに伴ない蒸発速度が異なる結果、入
力面に蒸着されるＳｂの膜厚にむらか発生し、Ｘ線イメ
ージ管の輝度−様性が損なわれるという欠点がある。第
６図は従来の蒸発源をＸ線イメージ管に使用した場合に
おける蒸着時間とＳｂ蒸発量との関係を示した特性曲線
図であり、蒸発源の場所毎例えば円周方向に１２０’間
隔３箇所それぞれＡボート、Ｂボート、Ｃボートを配設
した時ばらつきが大きいことか判る。In addition, multiple evaporation sources are installed inside the tube, and Sb is
In this case, the heating temperature differs depending on the evaporation source, and the evaporation rate differs accordingly, resulting in uneven Sb film thickness deposited on the input surface, which causes problems with the X-ray image tube. The disadvantage is that the brightness quality is impaired. FIG. 6 is a characteristic curve diagram showing the relationship between evaporation time and Sb evaporation amount when a conventional evaporation source is used in an X-ray image tube. It can be seen that there is a large variation when A boats, B boats, and C boats are placed at each location.
ところで蒸発速度のばらつきは、蒸発源の温度の不均一
によりもたらされるものであり、蒸発源のＳｂの融着量
の不均一による抵抗値の不均一が最大の要因である。従
来、Ｓｂ蒸発源は高融点金属基体に直接又は間接的に溶
融Ｓｂを融着させることにより形成しているため、Ｓｂ
の融着量を均一にすることは困難であった。Incidentally, the variation in the evaporation rate is caused by the non-uniformity of the temperature of the evaporation source, and the biggest factor is the non-uniformity of the resistance value due to the non-uniformity of the amount of Sb fused in the evaporation source. Conventionally, Sb evaporation sources have been formed by directly or indirectly fusing molten Sb to a high-melting point metal substrate.
It was difficult to make the amount of fusion bond uniform.
又、蒸発速度のばらつきをもたらす蒸発源の温度の不均
一の他の要因は、局所的に設けられた蒸発源の絶縁支持
部での熱伝導や電流供給端子からの熱伝導の影響も挙げ
ることが出来る。In addition, other factors contributing to the non-uniformity of the temperature of the evaporation source, which causes variations in the evaporation rate, include the effects of heat conduction at the locally provided insulating support part of the evaporation source and heat conduction from the current supply terminal. I can do it.
更に、従来のＳｂ蒸発源では、Ｓｂの融着量を正確に制
御することが難しいため、必要量以上のＳｂ量をＳｂ蒸
発源に付けておかねばならないため、光電面形成後もＳ
ｂ蒸発源にＳｂの残滓が生じていた。このＳｂ残滓は、
光電面形成時に導入されるアルカリ金属と反応しており
、僅かの振動により離脱し易い状態にあった。その結果
、Ｘ線イメージ管では欠点となったり、放電現象を引き
起こす原因の１つともなっていた。Furthermore, with conventional Sb evaporation sources, it is difficult to accurately control the amount of Sb fused, so it is necessary to attach an amount of Sb greater than the required amount to the Sb evaporation source, so even after the photocathode is formed, Sb is not fused.
b Sb residue was present at the evaporation source. This Sb residue is
It had reacted with the alkali metal introduced during the formation of the photocathode, and was in a state where it was easily separated by slight vibration. As a result, this has become a drawback in X-ray image tubes and one of the causes of discharge phenomena.
この発明は、上記課題を解決すると共に、Ｓｂ蒸発速度
のばらつきを防止して、輝度−様性を改善することが出
来る光電面蒸発源およびＸ線イメージ管を提供すること
を目的とする。It is an object of the present invention to provide a photocathode evaporation source and an X-ray image tube that can solve the above problems, prevent variations in Sb evaporation rate, and improve brightness characteristics.
［発明の構成コ
（課題を解決するための手段）
この発明は、金属からなる面状フィラメントと、この面
状フィラメントの表面の少なくとも一部に直接又は間接
に被着された５μｍ以下の膜厚のＳｂ層とを具備する光
電面蒸発源である。[Structure of the Invention (Means for Solving the Problems) This invention relates to a planar filament made of metal, and a film having a thickness of 5 μm or less that is directly or indirectly applied to at least a part of the surface of the planar filament. This is a photocathode evaporation source comprising an Sb layer.
又、この発明は、上記の光電面蒸発源を用いて形成され
た光電面を有するＸ線イメージ管である。The present invention also provides an X-ray image tube having a photocathode formed using the photocathode evaporation source described above.
（作 用）
この発明によれば、Ｓｂ蒸発源の温度むらの主原因であ
ったＳｂ付看むらがなくなり、Ｓｂ蒸発速度のばらつき
が著しく改善された。又、この発明によれば、Ｘ線イメ
ージ管の輝度−様性が大幅に改善され、且つＳｂ残滓に
よる不都合も生しることなく、管内異物の量が低減した
。(Function) According to the present invention, the Sb deposition unevenness, which was the main cause of temperature unevenness in the Sb evaporation source, has been eliminated, and the variation in the Sb evaporation rate has been significantly improved. Further, according to the present invention, the brightness characteristics of the X-ray image tube are greatly improved, and the amount of foreign matter inside the tube is reduced without causing any inconvenience due to Sb residue.
（実施例）
以下、図面を参照して、この発明の一実施例を詳細に説
明する。(Example) Hereinafter, an example of the present invention will be described in detail with reference to the drawings.
先ず、光電面蒸発源について述べると、この発明による
光電面蒸発源１１は第１図（ａ）、（ｂ）に示すように
構成され、符号１２は高融点金属例えばモリブデン（以
下、ＭＯと言う）からなる面状にして且つリング状に形
成されたフィラメントである。このフィラメント１２の
表面の少なくとも一部に、直接又は間接に、Ｓｂ層１３
が５μｍ以下の膜厚に被着されている。尚、被着に当た
っては、例えばスパッタリング法等によりコーティング
している。又、フィラメントを構成する金属としでは、
上記のＭｏ以外にＴａ、Ｗ、Ｎｉ。First, referring to the photocathode evaporation source, the photocathode evaporation source 11 according to the present invention is constructed as shown in FIGS. ) is a planar and ring-shaped filament. A Sb layer 13 is formed directly or indirectly on at least a part of the surface of the filament 12.
is deposited to a film thickness of 5 μm or less. Incidentally, the coating is applied by, for example, a sputtering method. In addition, as for the metal that makes up the filament,
In addition to the above-mentioned Mo, Ta, W, and Ni.
Ｆｅ、ステンレス等が適する。Fe, stainless steel, etc. are suitable.
尚、フィラメント上に直接Ｓｂを形成させることも可能
であるが、フィラメントとＳｂとの反応を防止する目的
、又はＳｂ層の密着度を向上させる目的で、例えばｐｔ
等の中間層を予めフィラメント上に形成させておいても
良い。Although it is possible to form Sb directly on the filament, for the purpose of preventing the reaction between the filament and Sb or improving the adhesion of the Sb layer,
An intermediate layer such as the above may be formed on the filament in advance.
さて次に、この発明の光電面蒸発源１１を使用して形成
された光電面を有するＸ線イメージ管について説明する
。Next, an X-ray image tube having a photocathode formed using the photocathode evaporation source 11 of the present invention will be described.
即ち、この発明のＸ線イメージ管は第２図に示すように
構成され、主としてガラスからなる真空外囲器１４内の
入力側には入力面１５が配設され、出力側には陽極１６
と出力面１７が設けられている。又、真空外囲器１４の
側壁内面に沿って、集束電極１８が設けられている。That is, the X-ray image tube of the present invention is constructed as shown in FIG. 2, in which an input surface 15 is disposed on the input side of a vacuum envelope 14 mainly made of glass, and an anode 16 is disposed on the output side.
and an output surface 17 are provided. A focusing electrode 18 is also provided along the inner surface of the side wall of the vacuum envelope 14.
上記の入力面１５は、球面状の基板１９に入力蛍光膜２
０及び光電面２１が順次形成されて構成されている。上
記の出力面１７は、基板２２に出力蛍光膜２３が順次形
成されて構成されている。The input surface 15 has an input fluorescent film 2 on a spherical substrate 19.
0 and a photocathode 21 are sequentially formed. The output surface 17 described above is configured by sequentially forming an output fluorescent film 23 on a substrate 22.
更に、この発明では真空外囲器１４内の出力側に、入力
面１５に対向して環状支持板２４が配設され、この支持
板２４の入力面１５側に上記の光電面蒸発源１１が取付
けられている。Further, in the present invention, an annular support plate 24 is disposed on the output side of the vacuum envelope 14 facing the input surface 15, and the photocathode evaporation source 11 is mounted on the input surface 15 side of the support plate 24. installed.
光電面２１の形成に当たっては、通電加熱により光電面
蒸発源１１の温度を上昇させ、Ｓｂ層１３を全て蒸発さ
せることにより、入力蛍光膜２０上にＳｂむらのない均
一な光電面２１か形成される。In forming the photocathode 21, the temperature of the photocathode evaporation source 11 is raised by electrical heating to completely evaporate the Sb layer 13, thereby forming a uniform photocathode 21 without Sb unevenness on the input fluorescent film 20. Ru.
尚、第３図は、環状支持板１２０°間隔の位置Ａ点、Ｂ
点、０点に対応する位置での膜厚分布を示す。この発明
の光電面蒸発源１］を使用した場合における蒸着時間と
Ｓｂ蒸発量との関係を示した特性曲線図であり、蒸発源
の場所毎のばらつきが著しく小さくなっていることが判
る。第３図及び第６図の尺度は、横軸、縦軸を同一とし
た場合を示す。In addition, FIG. 3 shows positions A and B at 120° intervals on the annular support plate.
The film thickness distribution at the position corresponding to point 0 is shown. 1 is a characteristic curve diagram showing the relationship between the evaporation time and the amount of Sb evaporation when the photocathode evaporation source 1 of the present invention is used, and it can be seen that the variation among the locations of the evaporation source is significantly reduced. The scales in FIGS. 3 and 6 are based on the case where the horizontal and vertical axes are the same.
［発明の効果］
この発明によれば、光電面蒸発源は高融点金属からなる
面状フィラメントと、この面状フィラメントの表面の少
なくとも一部に直接又は間接に被着された必要且つ十分
な５μｍ以下の膜厚のＳｂ層とから構成されているので
、Ｘ線イメージ管の光電面形成時に光透過率センサを使
用する必要かない。又、Ｓｂの蒸着ムラの発生が防止さ
れ、Ｓｂの膜厚分布は局部的な膜厚のばらつきがなく、
−様な特性を有している。[Effects of the Invention] According to the present invention, the photocathode evaporation source includes a planar filament made of a high-melting point metal, and a necessary and sufficient 5 μm film directly or indirectly adhered to at least a portion of the surface of the planar filament. Since the Sb layer has the following thickness, there is no need to use a light transmittance sensor when forming the photocathode of the X-ray image tube. In addition, the occurrence of uneven deposition of Sb is prevented, and the Sb film thickness distribution is free from local variations in film thickness.
- It has various characteristics.
この結果、この発明の光電面蒸発源を使用して得られた
光電面の感度は均一となり、画像の輝度ムラか防止され
る。As a result, the sensitivity of the photocathode obtained using the photocathode evaporation source of the present invention becomes uniform, and uneven brightness of the image is prevented.
又、この発明の光電面蒸発源は、Ｓｂ層がスパッタリン
グ法等によりコーティングされているので、非常に強固
であり、面状フィラメントから破片が脱落せず、管内異
物とはならない。又、Ｓｂ蒸発後にはフィラメント上に
はＳｂが全く存在しなくなる。つまり、この発明では管
内にＳｂの残滓が実質上存在しない。Furthermore, since the photocathode evaporation source of the present invention is coated with an Sb layer by sputtering or the like, it is very strong, and fragments do not fall off from the planar filament and do not become foreign objects in the tube. Further, after Sb evaporates, no Sb exists on the filament at all. That is, in this invention, there is substantially no Sb residue inside the pipe.
従って、この発明の光電面蒸発源を使用して形成された
光電面を有するＸ線イメージ管は、輝度−様行か大幅に
改善される。又、管内異物量が減少する結果、従来見ら
れたＸ線イメージ管の欠点像や放電現象を未然に防止す
ることが出来る。Therefore, an X-ray image tube having a photocathode formed using the photocathode evaporation source of the present invention has significantly improved brightness characteristics. In addition, as a result of the reduction in the amount of foreign matter in the tube, it is possible to prevent defective images and discharge phenomena of conventional X-ray image tubes.
第１図（ａ）、（ｂ）はこの発明の一実施例に係る光電
面蒸発源を示す平面図と断面図、第２図はこの発明の一
実施例に係るＸ線イメージ管を模式的に示す概略断面図
、第３図はこの発明の光電面蒸発源による蒸着時間とＳ
ｂ蒸発量との関係を示す特性曲線図、第４図及び第５図
は従来の光電面蒸発源（２例）を示す斜視図、第６図は
従来の光電面蒸発源による蒸着時間とＳｂ蒸発量との関
係を示す特性曲線図である。
１］・・・光電面蒸発源、１２・・・フィラメント、１
３・・・Ｓｂ層、２１・・・光電面。
出願人代理人 弁理士 鈴江武彦
ｔ３
蒸着時間□
第４図
Ａポート1(a) and 1(b) are a plan view and a sectional view showing a photocathode evaporation source according to an embodiment of the present invention, and FIG. 2 is a schematic diagram of an X-ray image tube according to an embodiment of the present invention. The schematic cross-sectional view shown in FIG. 3 and the evaporation time and S
Characteristic curve diagram showing the relationship between b evaporation amount, Figures 4 and 5 are perspective views showing conventional photocathode evaporation sources (two examples), and Figure 6 shows the relationship between evaporation time and Sb by conventional photocathode evaporation source. It is a characteristic curve diagram showing the relationship with the amount of evaporation. 1]...Photocathode evaporation source, 12...Filament, 1
3...Sb layer, 21... Photocathode. Applicant's agent Patent attorney Takehiko Suzue t3 Vapor deposition time □ Figure 4 A port
Claims (2)
メントの表面の少なくとも一部に直接又は間接に被着さ
れた５μｍ以下の膜厚のＳｂ層とを具備することを特徴
とする光電面蒸発源。(1) Photocathode evaporation characterized by comprising a planar filament made of metal and an Sb layer with a thickness of 5 μm or less deposited directly or indirectly on at least a part of the surface of the planar filament. source.
れた光電面を有することを特徴とするＸ線イメージ管。(2) An X-ray image tube comprising a photocathode formed using the photocathode evaporation source according to claim 1 above.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2340277A JP3001968B2 (en) | 1990-11-30 | 1990-11-30 | Photocathode evaporation source and X-ray image tube |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2340277A JP3001968B2 (en) | 1990-11-30 | 1990-11-30 | Photocathode evaporation source and X-ray image tube |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04209443A true JPH04209443A (en) | 1992-07-30 |
| JP3001968B2 JP3001968B2 (en) | 2000-01-24 |
Family
ID=18335401
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2340277A Expired - Lifetime JP3001968B2 (en) | 1990-11-30 | 1990-11-30 | Photocathode evaporation source and X-ray image tube |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3001968B2 (en) |
-
1990
- 1990-11-30 JP JP2340277A patent/JP3001968B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JP3001968B2 (en) | 2000-01-24 |
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