JP2955317B2 - Evaporation source, its manufacturing method and image tube - Google Patents

Evaporation source, its manufacturing method and image tube

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Publication number
JP2955317B2
JP2955317B2 JP3718290A JP3718290A JP2955317B2 JP 2955317 B2 JP2955317 B2 JP 2955317B2 JP 3718290 A JP3718290 A JP 3718290A JP 3718290 A JP3718290 A JP 3718290A JP 2955317 B2 JP2955317 B2 JP 2955317B2
Authority
JP
Japan
Prior art keywords
evaporation source
photocathode
compound layer
linear
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP3718290A
Other languages
Japanese (ja)
Other versions
JPH03241632A (en
Inventor
隆司 野地
正三 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
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Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP3718290A priority Critical patent/JP2955317B2/en
Publication of JPH03241632A publication Critical patent/JPH03241632A/en
Application granted granted Critical
Publication of JP2955317B2 publication Critical patent/JP2955317B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Physical Vapour Deposition (AREA)
  • Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)
  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)

Description

【発明の詳細な説明】 [発明の目的] (産業上の利用分野) この発明はイメージ管の光電面を形成する場合に使用
して好適な蒸発源とその製造方法及びイメージ管に関す
る。
The present invention relates to an evaporation source suitable for forming a photocathode of an image tube, a method for manufacturing the same, and an image tube.

(従来の技術) イメージ管の光電面を形成する場合に使用する蒸発源
は、従来、例えば特開昭51−36821号公報に開示された
ものがある。この蒸発源は第3図に示すように構成さ
れ、白金クラッド線16にアンチモン(以下、Sbと言う)
が所々に溶着されて粒状になり、Sb粒状部17が形成され
ている。
2. Description of the Related Art An evaporation source used for forming a photocathode of an image tube has been disclosed in, for example, Japanese Patent Application Laid-Open No. Sho 51-36821. This evaporation source is configured as shown in FIG. 3, and the platinum clad wire 16 has antimony (hereinafter referred to as Sb).
Are welded in places and become granular, and Sb granular portions 17 are formed.

このような蒸発源は通電加熱により温度上昇し、真空
中においてSb粒状部17のSbは蒸発し、イメージ管の光電
面形成材料のSb薄膜となる。このSb薄膜はアルカリ金属
等と化合物を形成して光電面となり、イメージ管のほか
撮像管、光電管等の光電面形成に用いられる。
The temperature of such an evaporation source rises due to electric heating, and the Sb of the Sb granular portion 17 evaporates in a vacuum to become an Sb thin film of a material for forming a photocathode of an image tube. The Sb thin film forms a compound with an alkali metal or the like to form a photocathode, and is used for forming a photocathode such as an image tube, an imaging tube, a phototube, and the like.

(発明が解決しようとする課題) 上記のような従来の蒸発源を使用した場合、光電面形
成時に白金クラッド線16に溶着されたSbからなるSb粒状
部17の多数の破片が落ち、撮像管等の光電面品位を低下
させる欠点がある。
(Problems to be Solved by the Invention) When the above-mentioned conventional evaporation source is used, a large number of fragments of the Sb granular portion 17 made of Sb deposited on the platinum clad wire 16 at the time of forming the photocathode are dropped, and the imaging tube is removed. There is a disadvantage that the quality of the photocathode deteriorates.

又、光電面形成の面積が広い場合に粒状のSbの量で
は、光電面形成に必要な膜を得ることが出来なく、良好
な感度が得られない欠点がある。そして、局部的な点蒸
発源であるため、Sb薄膜の付着ムラが発生する問題があ
り、不都合であった。
Further, when the area for forming the photocathode is large, if the amount of granular Sb is used, a film required for forming the photocathode cannot be obtained, and there is a disadvantage that good sensitivity cannot be obtained. In addition, since this is a local point evaporation source, there is a problem that unevenness in adhesion of the Sb thin film occurs, which is inconvenient.

この発明は、上記課題を解決すると共に、光電面を大
面積に形成する場合に均一な光電面を全面に形成するこ
とにより、感度の一様性を改善することが出来る蒸発源
とその製造方法及びイメージ管を提供することを目的と
する。
SUMMARY OF THE INVENTION The present invention solves the above problems, and further provides an evaporation source capable of improving sensitivity uniformity by forming a uniform photocathode over the entire surface when a photocathode is formed in a large area, and a method of manufacturing the same. And an image tube.

[発明の構成] (課題を解決するための手段) この発明は、高融点金属線と、この高融点金属線上に
被覆された白金属元素の1種又は複数種とSbとが化合し
てなる化合物層と、この化合物層上に被覆されたSb層と
を具備してなる蒸発源である。
[Constitution of the Invention] (Means for Solving the Problems) The present invention comprises a refractory metal wire, and one or more kinds of white metal elements coated on the refractory metal wire combined with Sb. An evaporation source comprising a compound layer and an Sb layer coated on the compound layer.

又、この発明は、高融点金属線上に白金属元素の1種
又は複数種を被覆する工程と、次に、非反応雰囲気又は
真空中において上記白金属元素の1種又は複数種が被覆
された高融点金属線をSb融液中に連続的に浸漬して、高
融点金属線上に化合物層を被覆する工程と、次に、上記
化合物層上にSb層を被覆する工程とを具備してなる蒸発
源の製造方法である。
Further, according to the present invention, a step of coating one or more kinds of white metal elements on a high melting point metal wire, and then, one or more kinds of the above white metal elements are coated in a non-reactive atmosphere or vacuum. The step of continuously immersing the high-melting metal wire in the Sb melt to cover the compound layer on the high-melting metal wire, and then covering the compound layer with the Sb layer. This is a method for producing an evaporation source.

更に、この発明は、上記の蒸発源を用いて形成された
光電面を有するイメージ管である。
Further, the present invention is an image tube having a photocathode formed using the above-mentioned evaporation source.

(作 用) この発明によれば、通電加熱された線状Sb蒸発源は、
高融点金属線の加熱によって白金−Sbの化合物が分解
し、Sbのみが低蒸気圧のために真空中に蒸発する。そし
て、Sbの蒸発部位は線状Sb蒸発源の全てに亘っており、
被光電面形成面に蒸発したSBが薄膜形成され、容易に光
電面を形成出来る動きをする。
(Operation) According to the present invention, the linearly heated Sb evaporation source is
The heating of the refractory metal wire decomposes the platinum-Sb compound, and only Sb evaporates in vacuum due to low vapor pressure. And the Sb evaporation site extends over all of the linear Sb evaporation sources,
The evaporated SB is formed as a thin film on the surface to be photocathode-formed, and moves so that the photocathode can be easily formed.

(実施例) 以下、図面を参照して、この発明の一実施例を詳細に
説明する。
Hereinafter, an embodiment of the present invention will be described in detail with reference to the drawings.

先ず、蒸発源について述べると、この発明による蒸発
源は第1図に示すように構成され、高融点金属線例えば
モリブデン(以下、Moと言う)からなる芯線に白金がめ
っきされた白金クラッド線1上に、白金(Pt)と化合し
たPt−Sb化合物層2が被覆される。更に、このPt−Sb化
合物層2の上に、Sb層3が被覆されて線状Sb蒸発源4が
構成されている。
First, the evaporation source will be described. The evaporation source according to the present invention is constructed as shown in FIG. 1 and has a platinum clad wire 1 in which platinum is plated on a core wire made of a high melting point metal wire, for example, molybdenum (hereinafter referred to as Mo). A Pt—Sb compound layer 2 combined with platinum (Pt) is coated thereon. Further, an Sb layer 3 is coated on the Pt—Sb compound layer 2 to form a linear Sb evaporation source 4.

この場合、白金クラッド線1の直径は0.2〜0.7mmの範
囲に設定され、Pt−Sb化合物層2の厚さは50〜150μm
の範囲に設定され、Sb層3の厚さは10〜50μmの範囲に
設定されている。
In this case, the diameter of the platinum clad wire 1 is set in the range of 0.2 to 0.7 mm, and the thickness of the Pt—Sb compound layer 2 is 50 to 150 μm.
And the thickness of the Sb layer 3 is set in the range of 10 to 50 μm.

尚、Pt−Sb化合物層2の厚さもSb層3の厚さも、いず
れも線状に亘り同じ厚さになっている。又、PtとSbの原
子数比は1:1乃至2:1が好適である。
Note that both the thickness of the Pt—Sb compound layer 2 and the thickness of the Sb layer 3 are the same over a linear shape. Further, the atomic ratio of Pt to Sb is preferably from 1: 1 to 2: 1.

この線状Sb蒸発源4は、例えば後述のイメージ管にお
ける光電面の形成に使用する場合は、大面積の入力面に
対向して例えば環状に配設される。イメージ管のような
均一な光電面を形成する際には、幾何学的配置を満たし
て、この線状Sb蒸発源4を配置することが出来る。
When the linear Sb evaporation source 4 is used, for example, for forming a photocathode in an image tube described later, the linear Sb evaporation source 4 is arranged, for example, in an annular shape so as to face a large-area input surface. When forming a uniform photocathode such as an image tube, the linear Sb evaporation source 4 can be arranged so as to satisfy the geometrical arrangement.

次に、上記の線状Sb蒸発源4の製造方法について、説
明する。
Next, a method for manufacturing the linear Sb evaporation source 4 will be described.

先ず、直径が0.3mmのMo芯線にPtを被覆して白金クラ
ッド線1を形成する。
First, a Pt clad wire 1 is formed by coating a Mo core wire having a diameter of 0.3 mm with Pt.

次に、この白金クラッド線1を非酸化性雰囲気例えば
窒素ガス雰囲気中に設置し、Sb溶融ルツボ例えば500℃
〜650℃の溶液中に連続的に浸漬する。
Next, the platinum clad wire 1 is placed in a non-oxidizing atmosphere, for example, a nitrogen gas atmosphere, and a Sb melting crucible, for example, 500 ° C.
Continuous immersion in a solution at ~ 650 ° C.

浸漬後の白金クラッド線1はMoを芯線としPt−Sbの化
合物層2、Sb層3が順次形成されたものとなり、巻取り
保管する。
After the immersion, the platinum clad wire 1 has Mo as a core wire, a Pt—Sb compound layer 2 and an Sb layer 3 sequentially formed, and is wound up and stored.

上記の場合、Sb溶融ルツボはMo、Ta等の高融点金属製
又はセラミックス製を用いることによって、Sb融液の温
度をほぼ一定に保つことが出来る。
In the above case, the temperature of the Sb melt can be kept substantially constant by using a high melting point metal such as Mo or Ta or a ceramic as the Sb melt crucible.

又、線の搬送は、線を巻き付けたスプールの回転速度
を調整し、Pt−Sbの化合物組成、その厚さ、及び表面の
Sb層3の厚さを選択することが出来る。
In addition, the wire is transported by adjusting the rotation speed of the spool around which the wire is wound, and the composition of the Pt-Sb compound, its thickness, and the surface.
The thickness of the Sb layer 3 can be selected.

この製造方法により、線状Sb蒸発源4はPt−Sb化合物
層2の組成・厚さが連続的に均一となり、Sb層3の厚
さ、付着強度も均一となる。而も、酸化や汚染が発生し
ないため、線状Sb蒸発源4の品質が向上する。
According to this manufacturing method, the composition and thickness of the Pt—Sb compound layer 2 of the linear Sb evaporation source 4 are continuously uniform, and the thickness and adhesion strength of the Sb layer 3 are also uniform. In addition, since no oxidation or contamination occurs, the quality of the linear Sb evaporation source 4 is improved.

尚、高融点金属線の素材は、上記実施例以外にTa、W
等が適する。
The material of the high melting point metal wire is Ta, W
Etc. are suitable.

さて次に、この発明の線状Sb蒸発源4を使用して形成
された光電面を有するイメージ管について説明する。
Next, an image tube having a photocathode formed by using the linear Sb evaporation source 4 of the present invention will be described.

即ち、この発明のイメージ管は第2図に示すように構
成され、主としてガラスからなる真空外囲器5内の入力
側には入力面が配設され、出力側には陽極7と出力面
が設けられている。又、真空外囲器5の側壁内面に沿
って、集束電極9が設けられている。
That is, the image tube of the present invention is constructed as shown in FIG. 2, in which an input surface 6 is provided on the input side in a vacuum envelope 5 mainly made of glass, and an anode 7 and an output surface are provided on the output side.
8 are provided. A focusing electrode 9 is provided along the inner surface of the side wall of the vacuum envelope 5.

上記の入力面は、球面状の基板10に入力蛍光膜11及
び光電面12が順次形成されて構成されている。上記の出
力面は、基板13に出力蛍光膜14が順次形成されて構成
されている。
The input surface 6 is configured by sequentially forming an input fluorescent film 11 and a photoelectric surface 12 on a spherical substrate 10. The output surface 8 is formed by sequentially forming an output fluorescent film 14 on a substrate 13.

更に、この発明では真空外囲器5内の出力側に、入力
に対向して環状電極15が配設され、この電極15にこ
の発明の線状Sb蒸発源4が配置されている。
Further, in the present invention, an annular electrode 15 is disposed on the output side in the vacuum envelope 5 so as to face the input surface 6 , and the linear Sb evaporation source 4 of the present invention is disposed on the electrode 15.

この場合、線状Sb蒸発源4の配置形状は、入力面
面積と線状Sb蒸発源4と光電面12の距離によって選択さ
れるが、この実施例のように電極15上に環状に配置する
のが、最も簡単である。
In this case, the arrangement shape of the linear Sb evaporation source 4 is selected according to the area of the input surface 6 and the distance between the linear Sb evaporation source 4 and the photocathode 12. It is the easiest to place.

さて、光電面12形成に当たっては、通電加熱により線
状Sb蒸発源4は温度が上昇し、Pt−Sb化合物層2の熱分
解によるSbの蒸発及び表面のSb層3の蒸発が生じる。こ
の時、線状Sb蒸発源4は加熱されると、通電部分の全て
が同一温度になり、Pt−Sb化合物層2の分解蒸発は線上
で均一となる。
In forming the photocathode 12, the temperature of the linear Sb evaporation source 4 rises due to electric heating, and evaporation of Sb due to thermal decomposition of the Pt-Sb compound layer 2 and evaporation of the Sb layer 3 on the surface occur. At this time, when the linear Sb evaporation source 4 is heated, all of the energized portions have the same temperature, and the decomposition and evaporation of the Pt—Sb compound layer 2 become uniform on the line.

このため、線状Sb蒸発源4のSbは均一に蒸発されて、
光電面12となるSb薄膜となる。このSb薄膜の膜圧分布
は、光電面全面に均一となり、点蒸発源に対応していた
Sb薄膜の膜厚ムラがなくなる。その結果、光電面12の感
度特性は全面一様になるので、イメージ管の画像輝度を
一様にすることが出来る。
For this reason, Sb of the linear Sb evaporation source 4 is uniformly evaporated,
The Sb thin film which becomes the photocathode 12 is obtained. The film pressure distribution of this Sb thin film became uniform over the entire photocathode, and corresponded to the point evaporation source.
The thickness unevenness of the Sb thin film is eliminated. As a result, the sensitivity characteristics of the photocathode 12 are uniform over the entire surface, so that the image luminance of the image tube can be uniform.

又、この発明の線状Sb蒸発源4は、その表面層である
Sb層3は密に形成されており、Pt−Sb化合物層2の熱分
解によるSbの蒸発、及びSb層3の蒸発に際して線状Sb蒸
発源4の破損がなく、異物として脱落することがないた
め、画像品位を低下させることがない。
The linear Sb evaporation source 4 of the present invention is a surface layer thereof.
The Sb layer 3 is formed densely, so that there is no damage of the linear Sb evaporation source 4 during evaporation of Sb due to thermal decomposition of the Pt-Sb compound layer 2 and evaporation of the Sb layer 3 and does not fall off as foreign matter. Therefore, the image quality is not reduced.

尚、上記の場合、線状Sb蒸発源4は抵抗体としては均
一であるため、細線上のどの部分の温度もほぼ同じであ
り、発熱体としては発生熱は小さく、加熱によるガス発
生源としては他の接続用リード線がないため、微量であ
る。
In the above case, since the linear Sb evaporation source 4 is uniform as a resistor, the temperature of any part on the thin wire is almost the same, the heat generated as a heating element is small, and the heat generation gas source is used. Is small because there is no other connection lead wire.

又、このような線状Sb蒸発源4は、点蒸発源を複数個
配置するか乃至線状に一体のものであり、構造が簡単な
ため、電極15上への固定が容易である。その結果、組立
て時間は短縮され、組立てに伴なう固定用部品数は減少
する。
In addition, such a linear Sb evaporation source 4 has a plurality of point evaporation sources arranged or is linearly integrated. Since the structure is simple, it can be easily fixed on the electrode 15. As a result, the assembling time is shortened, and the number of fixing parts involved in the assembling is reduced.

[発明の効果] この発明によれば、蒸発源は高融点金属線上に被覆さ
れた2種類の層が連続的に均一に形成されているので、
広い面積にSbを一様に蒸着する場合、Sbの膜厚分布は局
部的な膜厚のバラツキがなく、一様な特性を有してい
る。
[Effects of the Invention] According to the present invention, the evaporation source is formed by continuously and uniformly forming two types of layers coated on the high melting point metal wire.
When Sb is uniformly deposited over a large area, the Sb film thickness distribution has no local variation in film thickness and has uniform characteristics.

この結果、この発明の蒸発源を使用して得られた光電
面の感度は均一となり、画像の輝度ムラが防止される。
As a result, the sensitivity of the photocathode obtained by using the evaporation source of the present invention becomes uniform, and uneven brightness of an image is prevented.

又、この発明の蒸発源は、Pt−Sb化合物層及びSb層の
積層構造であるため、非常に強固であり、芯線から破片
が脱落せず、面品位の低下が引き起こされない。
Further, since the evaporation source of the present invention has a laminated structure of the Pt—Sb compound layer and the Sb layer, it is very strong, no fragments are dropped off from the core wire, and the surface quality is not deteriorated.

更に、この発明の蒸発源を使用した光電面の形成法に
よれば、安定した品質が得られ、連続製作が出来るため
極めて能率的である。
Further, according to the method for forming a photocathode using the evaporation source of the present invention, stable quality can be obtained and continuous production can be performed, which is extremely efficient.

【図面の簡単な説明】[Brief description of the drawings]

第1図はこの発明の一実施例に係る蒸発源を示す横断面
図、第2図はこの発明の一実施例に係るイメージ管を模
式的に示す縦断面図、第3図は従来の蒸発源を示す斜視
図である。 1……白金クラッド線(高融点金属線)、2……Pt−Sb
化合物層、3……Sb層、4……線状Sb蒸発源、12……光
電面。
FIG. 1 is a transverse sectional view showing an evaporation source according to one embodiment of the present invention, FIG. 2 is a longitudinal sectional view schematically showing an image tube according to one embodiment of the present invention, and FIG. It is a perspective view which shows a source. 1 ... Platinum clad wire (high melting point metal wire) 2 ... Pt-Sb
Compound layer, 3 ... Sb layer, 4 ... Linear Sb evaporation source, 12 ... Photocathode.

フロントページの続き (58)調査した分野(Int.Cl.6,DB名) H01J 9/12 H01J 29/38 H01J 31/50 H01J 29/45 H01J 9/233 Continuation of the front page (58) Field surveyed (Int.Cl. 6 , DB name) H01J 9/12 H01J 29/38 H01J 31/50 H01J 29/45 H01J 9/233

Claims (3)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】高融点金属線と、この高融点金属線上に被
覆された白金属元素の1種又は複数種とSbとが化合して
なる化合物層と、この化合物層上に被覆されたSb層とを
具備してなることを特徴とする蒸発源。
1. A high melting point metal wire, a compound layer formed by combining one or more kinds of white metal elements coated on the high melting point metal wire with Sb, and a Sb coated on the compound layer And an evaporation source.
【請求項2】高融点金属線上に白金属元素の1種又は複
数種を被覆する工程と、 次に、非反応雰囲気又は真空中において上記白金属元素
の1種又は複数種が被覆された高融点金属線をSb融液中
に連続的に浸漬して、高融点金属線上に化合物層を被覆
する工程と、 次に、上記化合物層上にSb層を被覆する工程とを具備し
てなることを特徴とする蒸発源の製造方法。
2. A step of coating one or more kinds of white metal elements on a refractory metal wire; and a step of coating one or more kinds of white metal elements in a non-reactive atmosphere or vacuum. A step of continuously immersing the melting point metal wire in the Sb melt to coat a compound layer on the high melting point metal wire, and then a step of coating the compound layer with an Sb layer. A method for producing an evaporation source.
【請求項3】上記請求項1の蒸発源を用いて形成された
光電面を有することを特徴とするイメージ管。
3. An image tube having a photocathode formed by using the evaporation source according to claim 1.
JP3718290A 1990-02-20 1990-02-20 Evaporation source, its manufacturing method and image tube Expired - Lifetime JP2955317B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3718290A JP2955317B2 (en) 1990-02-20 1990-02-20 Evaporation source, its manufacturing method and image tube

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3718290A JP2955317B2 (en) 1990-02-20 1990-02-20 Evaporation source, its manufacturing method and image tube

Publications (2)

Publication Number Publication Date
JPH03241632A JPH03241632A (en) 1991-10-28
JP2955317B2 true JP2955317B2 (en) 1999-10-04

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JP3718290A Expired - Lifetime JP2955317B2 (en) 1990-02-20 1990-02-20 Evaporation source, its manufacturing method and image tube

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JPH03241632A (en) 1991-10-28

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