JPH0135458B2 - - Google Patents
Info
- Publication number
- JPH0135458B2 JPH0135458B2 JP17637783A JP17637783A JPH0135458B2 JP H0135458 B2 JPH0135458 B2 JP H0135458B2 JP 17637783 A JP17637783 A JP 17637783A JP 17637783 A JP17637783 A JP 17637783A JP H0135458 B2 JPH0135458 B2 JP H0135458B2
- Authority
- JP
- Japan
- Prior art keywords
- cathode
- impregnated
- coating layer
- tungsten
- impregnated cathode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052721 tungsten Inorganic materials 0.000 claims description 15
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 12
- 239000010937 tungsten Substances 0.000 claims description 12
- 239000011247 coating layer Substances 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 229910052741 iridium Inorganic materials 0.000 claims description 8
- 229910001080 W alloy Inorganic materials 0.000 claims description 5
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 3
- 239000011148 porous material Substances 0.000 claims description 3
- IGUHATROZYFXKR-UHFFFAOYSA-N [W].[Ir] Chemical compound [W].[Ir] IGUHATROZYFXKR-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 9
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 229910052788 barium Inorganic materials 0.000 description 4
- 229910052791 calcium Inorganic materials 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 229910052762 osmium Inorganic materials 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/13—Solid thermionic cathodes
- H01J1/14—Solid thermionic cathodes characterised by the material
Description
【発明の詳細な説明】 〔発明の技術分野〕 本発明は、含浸型陰極の改良に関する。[Detailed description of the invention] [Technical field of invention] The present invention relates to improvements in impregnated cathodes.
従来より用いられている含浸型陰極の構造及び
製造法を第１図により説明する。含浸型陰極は、
次のような工程で製作される。粒径が約3μｍの
Ｗ（タングステン）Mo（モリブデン）等の高融点
金属粉末をプレスした後、比重が約16（空孔率約
17％）になるように高温雰囲気中で焼結し、多孔
質高融点金属基体１を製作する。次に上記基体１
の空孔部にBaO、CaO、Al2O3よりなる電子放射
物質を高温（例えば1800℃）の還元性雰囲気中で
溶融含浸する。図中２のカソードスリーブはTa、
Mo、Re−Mo製で、基体１にレーザ溶接法で固
着される。図中３は陰極の電子放射特性を向上さ
せるために、基体１の表面にスパツタリング法等
により被着形成されたオスミウム（Os）膜（厚
さ約2000Å）で、このOs膜を被覆することによ
り含浸型陰極は完成する。図中４は、上記陰極を
加熱するためのヒータである。
The structure and manufacturing method of a conventionally used impregnated cathode will be explained with reference to FIG. The impregnated cathode is
It is manufactured using the following process. After pressing high melting point metal powder such as W (tungsten) and Mo (molybdenum) with a particle size of approximately 3 μm, the specific gravity is approximately 16 (porosity is approximately
17%) in a high temperature atmosphere to produce a porous high melting point metal substrate 1. Next, the base 1
The pores are melted and impregnated with an electron-emitting material made of BaO, CaO, and Al 2 O 3 in a reducing atmosphere at a high temperature (for example, 1800° C.). The cathode sleeve 2 in the figure is Ta,
It is made of Mo or Re-Mo and is fixed to the base 1 by laser welding. 3 in the figure is an osmium (Os) film (approximately 2000 Å thick) deposited on the surface of the substrate 1 by sputtering or the like in order to improve the electron emission characteristics of the cathode. The impregnated cathode is completed. 4 in the figure is a heater for heating the cathode.
一般的にOs等の金属を被覆した含浸型陰極は、
被覆層のない従来型の含浸型陰極に較べて同じ動
作温度で約３倍のエミツシヨン能力を有してい
る。Os金属被覆型含浸型陰極を例にとつて説明
する。陰極温度1050℃で、両方の陰極の零電界エ
ミツシヨンは、
従来型含浸型陰極…３〜4A／cm2
Os金属被覆型含浸型陰極…10〜13A／cm2
という結果が得られている。しかしながら、この
特性が得られるのは、第２図に曲線Ｂで示すよう
に動作時間（ライフタイム）が500時間を経過し
て以降のことであり、初期から約500時間までの
間は本来の能力を発揮しないことも実験結果から
判明した。なお従来型含浸型陰極のエミツシヨン
能力は、第２図に曲線Ａで示している。 Generally, impregnated cathodes coated with metal such as Os,
Compared to a conventional impregnated cathode without a coating layer, it has approximately three times the emission capacity at the same operating temperature. This will be explained using an Os metal-coated impregnated cathode as an example. At a cathode temperature of 1050 DEG C., the zero field emission of both cathodes is: Conventional impregnated cathode: 3-4 A/cm 2 Os metal-coated impregnated cathode: 10-13 A/cm 2 . However, this characteristic is obtained only after the operating time (lifetime) has passed 500 hours, as shown by curve B in Figure 2. The experimental results also revealed that they did not demonstrate their abilities. The emission capacity of the conventional impregnated cathode is shown by curve A in FIG.
この原因を調査するため、Ｘ線マイクロアナラ
イザを用いライフ途中に取り出した陰極の電子放
射面観察を行なつた。その結果、初期及び250時
間までの陰極表面からは、主にOsが検出され、
部分的に電子放射物質であるBa、Ca等が検出さ
れ、動作時間が500時間を経過したもの、及び
1000時間経過品の陰極表面からは、全面にわたつ
てOs、Ｗ、Ba、Caが検出された。 In order to investigate the cause of this, an X-ray microanalyzer was used to observe the electron emitting surface of the cathode taken out during its life. As a result, Os was mainly detected on the cathode surface at the initial stage and up to 250 hours.
Items with partially detected electron emitting substances such as Ba and Ca, and which have been operated for 500 hours, and
Os, W, Ba, and Ca were detected over the entire surface of the cathode after 1000 hours.
この結果からエミツシヨン能力を向上するに
は、Ba、Ca等が全面に分布することが必要であ
り、Os、Ｗの存在もBa、Caの分布へ好影響を与
えているものと推定した。 From this result, it was assumed that in order to improve the emission ability, it is necessary for Ba, Ca, etc. to be distributed over the entire surface, and that the presence of Os and W also has a positive influence on the distribution of Ba and Ca.
そこで高融点金属粉末と共に、Os、Ir、Ru、
Re等を混合して焼結し、電子放射物質を含浸さ
せた含浸型陰極を試作し、エミツシヨン能力を評
価したが、結果は第２図に曲線Ｂで示す特性と同
様に好ましくなかつた。 Therefore, along with high melting point metal powder, Os, Ir, Ru,
An impregnated cathode was prototyped by mixing and sintering Re, etc. and impregnating it with an electron-emitting substance, and its emission ability was evaluated, but the results were unfavorable, similar to the characteristics shown by curve B in Figure 2.
本発明は、従来の含浸型陰極が有する本来の電
子放射能力を発揮するまでに長時間を要するとい
う欠点を改良した新規な含浸型陰極を提供するこ
とを目的とする。
An object of the present invention is to provide a novel impregnated cathode that improves the disadvantage of conventional impregnated cathodes in that it takes a long time to exhibit their original electron emission ability.
本発明は空孔部に電子放射物質が含浸された多
孔質金属基体の表面に、10〜90重量％のイリジウ
ム（Ir）およびタングステン（Ｗ）のスパツタ
膜、蒸着膜又はCVD法による膜等の合金被覆層
が形成されてなる含浸型陰極である。発明者等は
含浸型陰極のエミツシヨン能力を短時間で発揮で
きるようにするための数々の実験を行う中で、多
孔質タングステン基体表面にIrとＷとの合金被覆
層を形成すれば、エミツシヨン能力の早期発揮が
可能であることを見出し本発明を完成した。この
Ir−Ｗ合金被覆層を形成する手段としてスパツタ
法、蒸着法、CVD法等を採用することができる。
そして、合金被覆層の厚さは、200〜20000Åの範
囲が好ましい。200Å末満では薄過ぎてエミツシ
ヨン能力を十分に発揮することができない。一方
20000Åを越えると、やはりエミツシヨン能力が
十分に発揮されない。これは陰極基体からの電子
放射物質の拡散が合金膜により妨げられ、Ba原
子の分布が不十分になるためであろう。
In the present invention, a sputtered film, vapor deposited film, or CVD film of 10 to 90% by weight of iridium (Ir) and tungsten (W) is applied to the surface of a porous metal substrate whose pores are impregnated with an electron-emitting substance. This is an impregnated cathode formed with an alloy coating layer. The inventors conducted a number of experiments to demonstrate the emission ability of impregnated cathodes in a short time, and found that by forming an alloy coating layer of Ir and W on the surface of a porous tungsten substrate, the emission ability could be improved. The present invention was completed based on the discovery that early onset of the effects is possible. this
A sputtering method, a vapor deposition method, a CVD method, etc. can be employed as a means for forming the Ir-W alloy coating layer.
The thickness of the alloy coating layer is preferably in the range of 200 to 20,000 Å. At the end of 200 Å, it is too thin and cannot fully demonstrate its emission ability. on the other hand
If it exceeds 20,000 Å, the emission ability will not be fully demonstrated. This is probably because diffusion of the electron-emitting substance from the cathode substrate is hindered by the alloy film, resulting in insufficient distribution of Ba atoms.
IrとＷとの比率は10対90〜90対10（重量比）の
如く広い範囲でも発明の効果は得られ特にＷが70
重量％のときが最良である。 The effects of the invention can be obtained even when the ratio of Ir and W is in a wide range from 10:90 to 90:10 (weight ratio).
% by weight is best.
Irは単独で用いてもよいが、他の元素を微量含
んでいてもよい。 Ir may be used alone, but may also contain trace amounts of other elements.
従来と同じ方法により電子放射物質を含浸した
多孔質タングステン基体１を第３図に示す蒸着装
置に装着する。この装置の真空ベルジヤー１１の
中のに、タングステンリボン１２とイリジウムリ
ボン１３とが、保持板１４上に並べられた多孔質
タングステン基体１に対向して設置されている。
両リボンの間には仕切板１５が設けられている。
基体１の近くには蒸着膜を測定する水晶膜厚計１
６が置かれる。バルブ１７をあけてベルジヤ内を
圧力10-5Paまで排気し、電源１８，１９を投入
する。それにより、タングステンリボン１２及び
イリジウム１３は加熱されてそれぞれ蒸発する。
このときタングステンリボン１２の温度はほゞ
2800〓に、イリジウムリボン１３の温度はほゞ
2100〓になるようにコントロールする。蒸着速度
を水晶膜厚計で測定しながら蒸着する。
A porous tungsten substrate 1 impregnated with an electron-emitting material by the same conventional method is mounted in a vapor deposition apparatus shown in FIG. A tungsten ribbon 12 and an iridium ribbon 13 are placed in a vacuum bell gear 11 of this device, facing a porous tungsten substrate 1 arranged on a holding plate 14.
A partition plate 15 is provided between both ribbons.
Near the substrate 1 is a crystal film thickness gauge 1 for measuring the deposited film.
6 is placed. Open the valve 17 to evacuate the inside of the bell gear to a pressure of 10 -5 Pa, and turn on the power supplies 18 and 19. Thereby, the tungsten ribbon 12 and the iridium 13 are heated and evaporated, respectively.
At this time, the temperature of the tungsten ribbon 12 is approximately
At 2800, the temperature of the iridium ribbon 13 is approximately
Control it so that it becomes 2100〓. Vapor deposition is performed while measuring the deposition rate with a crystal film thickness meter.
このようにして、第４図に示すように基体１上
に厚さ約1000ÅのIr−Ｗ合金被覆層３１に形成し
た。なお同図において第１図と同一部分は同一符
号であらわしている。 In this manner, an Ir--W alloy coating layer 31 having a thickness of about 1000 Å was formed on the substrate 1, as shown in FIG. In this figure, the same parts as in FIG. 1 are represented by the same reference numerals.
この含浸型陰極を、電子銃に組込でエミツシヨ
ン能力の評価をしたところ、第２図に曲線Ｃで示
す結果を得た。すなわち、この実施例の含浸型陰
極は、動作開始初期から、安定で十分高いエミツ
シヨン特性を示すことが裏づけられた。 When this impregnated cathode was incorporated into an electron gun and its emission ability was evaluated, the results shown by curve C in FIG. 2 were obtained. That is, it was confirmed that the impregnated cathode of this example exhibited stable and sufficiently high emission characteristics from the initial stage of operation.
なお、Ir−Ｗ合金被覆層３１は、高周波スパツ
タリング法、CVD法などを利用して形成するこ
とができる。 Note that the Ir-W alloy coating layer 31 can be formed using a high frequency sputtering method, a CVD method, or the like.
以上説明したようにこの発明によれば、動作開
始の初期から安定で高いエミツシヨン特性が得ら
れる。 As explained above, according to the present invention, stable and high emission characteristics can be obtained from the initial stage of operation.
第１図は従来の含浸型陰極の構造を示す縦断面
図、第２図は従来及び本発明に係る陰極のエミツ
シヨン特性図、第３図は本発明の陰極の製造に用
いる装置の概略図、第４図は本発明の含浸型陰極
の構造を示す縦断図である。
１……多孔質タングステン基体、３１……Ir−
Ｗ合金被覆層。
FIG. 1 is a vertical cross-sectional view showing the structure of a conventional impregnated cathode, FIG. 2 is an emission characteristic diagram of cathodes according to the conventional method and the present invention, and FIG. 3 is a schematic diagram of an apparatus used for manufacturing the cathode of the present invention. FIG. 4 is a longitudinal sectional view showing the structure of the impregnated cathode of the present invention. 1...Porous tungsten base, 31...Ir-
W alloy coating layer.
Claims (1)
ン基体の空孔部に含浸された電子放射物質と、上
記タングステン基体上に被覆された表面金属被覆
層とを具備する含浸型陰極において、上記表面金
属被覆層は、イリジウムが10重量％乃至90重量％
の範囲のイリジウム−タングステン合金層からな
り、且つこの被覆層が200Å乃至20000Åの範囲の
厚さに形成されてなることを特徴とする含浸型陰
極。1. In an impregnated cathode comprising a porous tungsten base, an electron emitting material impregnated into the pores of the tungsten base, and a surface metal coating layer coated on the tungsten base, the surface metal coating layer is , 10% to 90% iridium by weight
An impregnated cathode comprising an iridium-tungsten alloy layer having a thickness ranging from 200 Å to 20,000 Å.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58176377A JPS6068527A (en) | 1983-09-26 | 1983-09-26 | Impregnated cathode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58176377A JPS6068527A (en) | 1983-09-26 | 1983-09-26 | Impregnated cathode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6068527A JPS6068527A (en) | 1985-04-19 |
| JPH0135458B2 true JPH0135458B2 (en) | 1989-07-25 |
Family
ID=16012565
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58176377A Granted JPS6068527A (en) | 1983-09-26 | 1983-09-26 | Impregnated cathode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6068527A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0777115B2 (en) * | 1985-05-20 | 1995-08-16 | 株式会社日立製作所 | Impregnated cathode |
| DE3782543T2 (en) * | 1986-06-06 | 1993-05-06 | Toshiba Kawasaki Kk | IMPREGNATED CATHODE. |
| KR930008611B1 (en) * | 1991-06-13 | 1993-09-10 | 삼성전관 주식회사 | Dispenser-type cathode and manufacturing method thereof |
-
1983
- 1983-09-26 JP JP58176377A patent/JPS6068527A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6068527A (en) | 1985-04-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |