JPH04208527A - Production device for semiconductor device - Google Patents

Abstract

PURPOSE:To prevent the generation of the flying-up of articles due to a turbulent flow at the time of the opening of two vacuum chambers by connecting a tank for absorbing the pressure difference of the two vacuum chambers between the two vacuum chambers by a bypass pipe. CONSTITUTION:A chamber 1 and a load locking chamber 2 are connected through a cut pipe 3A, pressure gages 4A, 4B are installed to the chamber 1 and the load locking chamber 2 respectively, and the load locking chamber 2 and the outside are connected through a cut pipe 3B. A tank 5 for absorbing pressure connected by a valve 6 and a valve 7 is mounted between the chamber 1 and the load locking chamber 2. Accordingly, pressure difference between the chamber 1 and the load locking chamber 2 is absorbed by the tank 5, thus preventing the flying-up of foreign matters due to the generation of a turbulent flow even when the cut valve 3A is opened.

Description

[Detailed description of the invention]

[00011

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus for manufacturing semiconductor devices, and more particularly to an apparatus for manufacturing semiconductor devices that utilizes vacuum. [0002] A conventional semiconductor device manufacturing apparatus using vacuum will be described with reference to the drawings. [00031] FIG. 3 is a block diagram of a conventional dry etching apparatus. A chamber 1 provided with a pair of electrodes 8 for processing wafers is connected to a load lock chamber 2 via a cut valve 3A. Pressure gauges 4A and 4B are attached to the chamber 1 and the load lock chamber 2, respectively. And cut valve 3 in load lock chamber 2
Wafers are carried in from the outside via B. Next, the operation will be explained. [0004] The load lock chamber 2 is brought to atmospheric pressure, the cut valve 3B is opened, the wafer is carried into the load lock chamber 2, and the cut valve 3B is closed. At the same time, load lock chamber 2
is evacuated by a vacuum pump or the like. When the pressure gauge 4A in the chamber 1 and the pressure gauge 4B in the load lock chamber determine that the pressure is the same, the cut valve 3A is opened, and the wafer is transferred into the chamber 1 and etched. Since there is a normal error between pressure gauge 4A and pressure gauge 4B,
When the pressure is judged to be the same and the cut valve 3A is opened,
The pressure difference between chamber 1 and load lock chamber 2 causes turbulence. [0005] Due to this turbulent flow, foreign matter deposited in the chamber 1 and the load lock chamber 2 is rolled up and attached to the wafer. Furthermore, when the etching in the chamber 1 is completed and the wafer is taken out, the cut valve 3 is opened again.
When A opens, turbulence occurs again and the wafer is contaminated by foreign matter. [0006]

[Problems to be Solved by the Invention] In the case of the above-mentioned conventional semiconductor device manufacturing equipment, even though pressure gauges are installed in each of the chamber and load lock chamber, there are errors in each pressure gauge and the mounting position of the pressure gauges may vary. Due to the effects of this, it was difficult to bring the two vacuum chambers to an equal pressure state where turbulence would not occur even if the two vacuum chambers were opened. [00073] Therefore, in the case of conventional semiconductor device manufacturing equipment, a slight pressure difference occurs between the two vacuum chambers, and turbulence occurs when the two vacuum chambers are opened. This causes a problem in that foreign matter in the vacuum chamber flies up and re-attaches to the wafer, resulting in a decrease in the yield of semiconductor devices. [0008]

[Means for Solving the Problems] The semiconductor device manufacturing apparatus of the present invention includes two vacuum chambers connected via a cut valve, and a pressure difference between the two vacuum chambers connected between the two vacuum chambers. It consists of a tank for absorbing water. [0009]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be explained with reference to the drawings. FIG. 1 is a block diagram of Embodiment 1 of the present invention, in which the present invention is applied to a dry etching apparatus. [00101 In FIG. 1, chamber 1 and load lock chamber 2 are connected via cut valve 3A, and chamber 1 and load lock chamber 2 are each equipped with a pressure gauge 4A.
, 4B are installed. Further, the load lock chamber 2 and the outside are connected via a cut valve 3B. Particularly, a pressure absorbing tank 5 is installed between the chamber 1 and the load lock chamber 2 and is connected through valves 6 and 7. The operation will be explained below. [0011] After the load lock chamber 2 is brought to atmospheric pressure, the cut valve 3B is opened to carry the wafer into the load lock chamber 2, and then the cut valve 3B is closed. At this time, the load lock chamber 2 is simultaneously evacuated. At this time, the valve 6 connected to the tank 5 is closed, and the valve 7 is opened. Therefore, the pressure inside the tank 5 is the same as that in the load lock chamber 2. When the pressure of the pressure gauge 4B is determined to be the same as that of the pressure gauge 4A, the valve 7 is closed, the valve 6 is opened, and the slight pressure difference between the chamber 1 and the load lock chamber 2 is absorbed by the tank 5. Thereafter, the cut valve 3A is opened to open the chamber 1 and the load lock chamber 2. Then, when the wafer is carried into the chamber 1 and the cut valve 3A is closed, the valve 6 is closed and the valve 7 is opened. Then, etching processing of the wafer is performed within the chamber 1. When the etching is completed and the pressure gauge 4B is determined to be at the same pressure as the pressure gauge 4A, the valve 7 closes and the valve 6 opens, just as at the time of delivery, and the slight pressure difference between the chamber 1 and the load lock chamber 2 is removed from the tank. Absorb by 5. After that, open the cut valve 3A and transfer the processed wafer to chamber 1.
Move it out further. [0012] As described above, according to the first embodiment, the pressure difference between the chamber 1 and the load lock chamber 2 is absorbed by the tank 5, so even when the cut valve 3A is opened, foreign matter due to the generation of air turbulence is prevented as in the conventional case. There will be no soaring. [00131 FIG. 2 is a configuration diagram of Embodiment 2 of the present invention,
This is a case where the present invention is applied to a dry etching apparatus. As in the first embodiment, the chamber 1 and the load-lock chamber 2 are connected via a cut valve 3A, and pressure gauges 4A and 4B are attached to the chamber 1 and the load-lock chamber 2, respectively. Further, the load lock chamber 2 and the outside are connected via a cut valve 3B. A pressure absorption tank 5 is installed as a bypass pipe between the chamber 1 and the load lock chamber 2, and the chamber 1 is connected to two valves 6.
A, 6B, and the load lock chamber 2 have two valves 7A.
, 7B. In particular, filters 9A and 9B are connected to valves 6A and 7A, respectively. Next, the operation will be explained. [0014] During the etching waiting time when there is no wafer in chamber 1 and load lock chamber 2, chamber 1
Filter 9
A and Ilter 9B are used to capture foreign matter in chamber 1 and load lock chamber 2. First, with valve 7B open and valve 6A closed, the inside of load lock chamber 2 is
Vacuum to a low pressure of about %. (However, in these patents 6B and 7A, the pressure is in the closed state.) Then, the pressure in the load lock chamber 2 and the open tank 5 become the same. Next, close valve 7B1. When the valve 6A is opened, the filter 9A is closed due to the pressure difference between the chamber 1 and the load lock chamber 2.
Foreign matter in the chamber 1 is drawn into the tank via the . The foreign matter is then captured by the filter 9A. [00151] First, the valve 6B is opened, and the chamber 1 is evacuated to a pressure approximately 5% lower than that of the load lock chamber 2 with the valve 7A closed. (However, this patent 6A
And valve 7B is closed. ) Then the pressures in the chamber 1 and the open tank S become the same. Then, when the valve 6B is closed and the valve 7A is opened, the foreign matter in the load-lock chamber 2 is drawn into the tank S via the filter 9B due to the pressure difference between the chamber 1 and the load-lock chamber 2. The foreign matter is then captured by the filter 9B. By repeating these series of operations, chamber 1
After removing foreign matter in the load lock chamber 2, the wafer is processed. This operation reduces the amount of foreign matter and improves the yield of semiconductor devices. [0016] In the above embodiment, the case of a dry etching apparatus was explained, but the present invention is not limited to this, and can be applied to semiconductor device manufacturing equipment having two vacuum chambers, such as a plasma CVD apparatus or a sputtering apparatus. Of course. [0017]

Effects of the Invention As explained above, the present invention enables two vacuum chambers to be connected by a bypass pipe to a tank for absorbing the pressure difference between the two vacuum chambers. Before the two vacuum chambers are opened, the pressure difference between the two vacuum chambers can be absorbed and eliminated by the tank via the bypass pipe, which eliminates the possibility of objects being lifted up by turbulence when the two vacuum chambers are opened, as was the case in the past. It won't happen anymore. Therefore, there is an effect that the manufacturing yield of semiconductor devices can be improved.

[Brief explanation of the drawing]

FIG. 1 is a configuration diagram of a first embodiment of the present invention.

FIG. 2 is a configuration diagram of a second embodiment of the present invention.

FIG. 3 is a configuration diagram of an example of a conventional semiconductor device manufacturing apparatus.

[Explanation of symbols]

1 Chamber 2 Load lock room 3A, 3B Cut pulp 4A, 4B Pressure gauge 5 Tank 6, 6A, 6B valve 7, 7A, 7B valve 8 Electrode 9A, 9B filter

Claims (1)

[Claims] Claim 1: A device comprising two vacuum chambers connected through a cut valve, and a tank connected between the two vacuum chambers for absorbing a pressure difference between the two vacuum chambers. Manufacturing equipment for semiconductor devices.