JPH04207588A - Image pickup device - Google Patents
Image pickup deviceInfo
- Publication number
- JPH04207588A JPH04207588A JP2336123A JP33612390A JPH04207588A JP H04207588 A JPH04207588 A JP H04207588A JP 2336123 A JP2336123 A JP 2336123A JP 33612390 A JP33612390 A JP 33612390A JP H04207588 A JPH04207588 A JP H04207588A
- Authority
- JP
- Japan
- Prior art keywords
- layer member
- recording
- electromagnetic radiation
- recorded
- photoreceptor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005670 electromagnetic radiation Effects 0.000 claims abstract description 35
- 230000004907 flux Effects 0.000 claims abstract description 23
- 230000003287 optical effect Effects 0.000 claims abstract description 22
- 108091008695 photoreceptors Proteins 0.000 claims description 56
- 238000003384 imaging method Methods 0.000 claims description 48
- 238000010586 diagram Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 230000005684 electric field Effects 0.000 description 5
- 239000000969 carrier Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000002699 waste material Substances 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 230000001052 transient effect Effects 0.000 description 2
- 241000283690 Bos taurus Species 0.000 description 1
- 239000005264 High molar mass liquid crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 125000000664 diazo group Chemical group [N-]=[N+]=[*] 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Photoreceptors In Electrophotography (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明は、感光体層部材及び記録層部材により電磁放射
線情報を記録する撮像装置に係り、撮像状態に応じて光
学的なンヤソタの開放時間や電気的なシャッタ時間を任
意に可変設定した場合でも良好なコントラストを有する
高品位な撮像かなしつるようにした撮像装置に関するも
のである。Detailed Description of the Invention (Industrial Field of Application) The present invention relates to an imaging device that records electromagnetic radiation information using a photoreceptor layer member and a recording layer member, and the present invention relates to an imaging device that records electromagnetic radiation information using a photoreceptor layer member and a recording layer member. The present invention relates to an imaging device that captures high-quality images with good contrast even when the electrical shutter time is arbitrarily set variably.
(従来の技術)
感光体層部材及び記録層部材により電磁放射線情報を記
録する装置及び方法については、本出願人かすてに発明
、出願したものとして、特願平1−291860号明細
書記載の「記録媒体及び記録、11牛方式」 (平成元
年11月9日出願)、特願平2−29938号明細書記
載の「電磁放射線情報の記録方法」 (平成2年2月1
2日出願)、特願平2−74390号明細書記載の[電
磁放射線情報の記録方法及び撮像装置ゴ (平成2年3
月230出願)なとがある。(Prior Art) The apparatus and method for recording electromagnetic radiation information using a photoreceptor layer member and a recording layer member are disclosed in Japanese Patent Application No. 1-291860, as invented and filed by the present applicant. "Recording medium and recording, 11 cattle system" (filed on November 9, 1989), "Method for recording electromagnetic radiation information" described in patent application No. 2-29938 (February 1, 1990)
(filed on March 2, 1990), [Recording method of electromagnetic radiation information and imaging device method (filed on March 1990) described in Japanese Patent Application No. 74390/1990
There are 230 applications per month).
これは、第5図に示すように、感光体層部材PCL及び
記録層部材CMLを第1の電極Ellと第2の電極Et
2との間に配置して、前記の第1.第2の電極Etl、
Et2間に所定の電圧を供給するように構成したもので
あり、感光体層部材PCLに記録の対象とされる電磁放
射線束(例えば、被写体OからレンズTLを介して入射
した光)を入射させて、前記した記録層部材CMLに記
録の対象にされている電磁放射線情報が記録されるもの
である。As shown in FIG.
2, and the above-mentioned 1. second electrode Etl,
It is configured to supply a predetermined voltage between Et2, and allows electromagnetic radiation flux to be recorded (for example, light incident from the subject O via the lens TL) to be incident on the photoreceptor layer member PCL. Thus, the electromagnetic radiation information to be recorded is recorded on the recording layer member CML.
記録の対象にされている電磁放射線束の感光体層部材P
CLへの露光量は光学的なシャッタPsによって設定し
得るように構成され、さらに、スイッチSW、電源Eか
らなる電気的なシャッタによって、第1.第2の電極E
tl、Et2間に所定の変化態様を示す電圧を印加しう
るように構成されており、例えば第6図に示すタイミン
グで撮像される。Photoreceptor layer member P of electromagnetic radiation flux being recorded
The amount of exposure to CL can be set by an optical shutter Ps, and an electric shutter consisting of a switch SW and a power source E is used to set the amount of exposure to the first CL. Second electrode E
It is configured so that a voltage showing a predetermined variation pattern can be applied between tl and Et2, and images are taken at the timing shown in FIG. 6, for example.
」−1記のように構成された撮像装置では、後に詳述す
るように光(電磁放射線)の入射の有無により、感光体
層部材PCLの抵抗(率)が変化しく光の入射した部位
では、キャリアが発生して見掛は上の抵抗値が小さくな
り、すなわち、暗抵抗率から明抵抗率と変化し)、この
結果、記録層部$4’ CM L両端の電圧としてこの
暗抵抗率による電圧変化と明抵抗率による電圧変化との
差分がコントラスト電圧(コントラスト値)の変化とし
て記録される。In the imaging device configured as described in ``-1 above, the resistance (rate) of the photoreceptor layer member PCL changes depending on whether or not light (electromagnetic radiation) is incident, as will be detailed later. , carriers are generated and the apparent upper resistance value becomes smaller, that is, it changes from dark resistivity to bright resistivity), and as a result, this dark resistivity as the voltage across the recording layer portion $4' CM L The difference between the voltage change due to the bright resistivity and the voltage change due to the bright resistivity is recorded as a change in the contrast voltage (contrast value).
(発明が解決しようとする課題)
このような感光体層部材PCL(光導電層)に被写体像
を与え、記録層部材CML (記録層)に対応した情報
を記録する撮像装置においては、被写体の明るさや使用
目的に応じて光学的なシャッタ時間を種々の値に設定す
る必要がある。例えば、低照度の被写体では長時間シャ
ッタで撮像して必要なコントラストを得たり、動きのあ
る被写体をシャッタ開放で撮像して被写体の運動軌跡を
記録したり、反対に、動きのある被写体を高速シャッタ
で撮像して静止したものとしてを記録したりする等の使
い方がある。(Problems to be Solved by the Invention) In such an imaging device that provides a subject image to the photoconductive layer member PCL (photoconductive layer) and records information corresponding to the recording layer member CML (recording layer), it is necessary to It is necessary to set the optical shutter time to various values depending on the brightness and purpose of use. For example, you can shoot a subject in low light for a long time to obtain the necessary contrast, shoot a moving subject with the shutter open to record the subject's movement trajectory, or conversely, shoot a moving subject at high speed. One way to use it is to capture an image with a shutter and record it as a still image.
ところが、このような撮像装置において、第7図(A)
及び(B)に示すように、記録層部材CML(記録層)
上のコントラスト電圧(明部電位と暗部電位の差)は、
電気的シャッタによる電圧印加時間に応じて過渡的に変
化する。However, in such an imaging device, as shown in FIG.
And as shown in (B), the recording layer member CML (recording layer)
The above contrast voltage (difference between bright and dark potentials) is
It changes transiently depending on the voltage application time by the electric shutter.
この結果、上記ような種々の搬像条件に対応するには、
第6図で説明した単純なシャ・ツタタイミングでは充分
でなく、撮像状態に応じて光学的なシャッタの開放時間
や電気的シャッタ時間を任意ニ可変設定すると、良好な
コントラストを有する高品位な撮像をなすことができな
かった。As a result, in order to accommodate the various image transfer conditions mentioned above,
The simple shutter timing explained in Fig. 6 is not sufficient, but high-quality imaging with good contrast can be achieved by setting the optical shutter opening time and electrical shutter time arbitrarily and variably according to the imaging condition. I couldn't do it.
(課題を解決するための手段)
本発明は上記課題を解決するために、第1の電極と第2
の電極との間に配置させた感光体層部材及び記録層部材
に対して、前記電極間に所定の電圧を供給するとともに
、前記感光体層部材に記録の対象とされる電磁放射線束
を入射させて、前記感光体層部材により過渡的に生じた
コントラスト値として、前記記録層部材に記録の対象に
されている電磁放射線情報を記録させる撮像装置におい
て、前記感光体層部材に記録の対象とされる電磁放射線
束が入射終了した後に、前記コントラスト値が略最大値
となるようにした撮像装置を提供すると共に1、第1の
電極と第2の電極との間に配置させた感光体層部材及び
記録層部材に対して、前記電極間に所定の電圧を供給す
るとともに、前記感光体層部材に記録の対象とされる電
磁放射線束を入射させて、前記感光体層部材により過渡
的に生じたコントラスト値として、前記記録層部材に記
録の対象にされている電磁放射線情報を記録させる撮像
装置において、前記電極間に所定の電圧を供給している
間に、前記コントラスト値が略最大値となるようにした
撮像装置を提供するものである。(Means for Solving the Problems) In order to solve the above problems, the present invention provides a first electrode and a second electrode.
A predetermined voltage is supplied between the electrodes of the photoreceptor layer member and the recording layer member disposed between the electrodes of the photoreceptor layer member, and an electromagnetic radiation flux to be recorded is incident on the photoreceptor layer member. In an imaging apparatus that records electromagnetic radiation information to be recorded on the recording layer member as a contrast value transiently generated by the photoreceptor layer member, 1. A photoreceptor layer disposed between a first electrode and a second electrode. A predetermined voltage is supplied between the electrodes of the member and the recording layer member, and electromagnetic radiation flux to be recorded is made incident on the photoreceptor layer member, so that the photoreceptor layer member transiently generates In an imaging device that records electromagnetic radiation information targeted for recording on the recording layer member, the contrast value is approximately a maximum value while a predetermined voltage is being supplied between the electrodes. The present invention provides an imaging device that satisfies the following.
(作用)
上記のように構成された撮像装置においては、前記記録
層部材CML (記録層)上のコントラスト値(明部電
位と暗部電位の差であるコントラスト電圧)は、前記感
光体層部材PCLの特性(明抵抗及び暗抵抗)に応じて
過渡的に変化し、前記感光体層部材CMLに記録の対象
とされる電磁放射線束が入射終了した後に、コントラス
ト値が略最大となる。したがって、入射した電磁放射線
束のほとんどが無駄なく感光体層部材CMLに撮像され
る。(Function) In the imaging device configured as described above, the contrast value (contrast voltage that is the difference between the bright area potential and the dark area potential) on the recording layer member CML (recording layer) is The contrast value changes transiently depending on the characteristics (bright resistance and dark resistance) of the contrast value, and reaches a substantially maximum value after the electromagnetic radiation flux to be recorded has finished being incident on the photoreceptor layer member CML. Therefore, most of the incident electromagnetic radiation flux is imaged on the photoreceptor layer member CML without waste.
さらに、上記のように構成された撮像装置においては、
前記記録層部材CML (記録層)上のコントラスト値
(明部電位と暗部電位の差であるコントラスト電圧)は
、前記感光体層部材PCLの特性(明抵抗及び暗抵抗)
に応じて過渡的に変化し、電極間に所定の電圧を供給し
ている間に、コントラスト値が略最大となる。Furthermore, in the imaging device configured as described above,
The contrast value (contrast voltage, which is the difference between the bright potential and the dark potential) on the recording layer member CML (recording layer) is determined by the characteristics (bright resistance and dark resistance) of the photoconductor layer member PCL.
The contrast value changes transiently according to the contrast value, and the contrast value becomes approximately maximum while a predetermined voltage is being supplied between the electrodes.
したがって、前記感光体層部材CMLに撮像された電磁
放射線束のほとんどが無駄なく記録層部材CML (記
録層)上に記録される。Therefore, most of the electromagnetic radiation flux imaged on the photoreceptor layer member CML is recorded on the recording layer member CML (recording layer) without waste.
(実施例)
本発明になる撮像装置の一実施例を以下、図面とともに
詳細に説明する。(Embodiment) An embodiment of the imaging device according to the present invention will be described in detail below with reference to the drawings.
最初に、撮像装置に構成について第2図(A)及び(B
)を参照して詳述する。同図(A)及び(B)において
、0は被写体、TLは撮像レンズ、PSは光学的なシャ
ッタ、Etlは透明電極、Et2は電極、PCLは光導
電体による感光体層部材、CMLは記録層部材、SWは
スイッチ、Eは電源(電圧V)であり、また・CTL
(L)は前記した光学的なシャッタPSの開閉動作の制
御に使用される開閉制御信号、CTL (V)は電気的
なシャッタの開閉制御信号、すなわち撮像装置に対する
動作電圧の供給、遮断動作を行なうスイッチSWの切換
制御信号である。同図に例示されている撮像装置におい
ては、透明電極Ellと電極Et2との間にはスイッチ
SWを介して電源Eを接続して前記した透明電極Etl
と電極Et2との間に所定の電界が発生されるようにな
されている。First, let us explain the configuration of the imaging device in Figures 2 (A) and (B).
) for details. In the same figures (A) and (B), 0 is the subject, TL is the imaging lens, PS is the optical shutter, Etl is the transparent electrode, Et2 is the electrode, PCL is the photoconductor layer member made of a photoconductor, and CML is the recording material. layer member, SW is a switch, E is a power supply (voltage V), and CTL
(L) is an opening/closing control signal used to control the opening/closing operation of the optical shutter PS described above, and CTL (V) is an opening/closing control signal of the electrical shutter, that is, the opening/closing control signal used to control the operation of supplying and shutting off the operating voltage to the imaging device. This is a switching control signal for the switch SW. In the imaging device illustrated in the same figure, a power source E is connected between the transparent electrode Ell and the electrode Et2 via a switch SW, and the transparent electrode Etl is
A predetermined electric field is generated between the electrode Et2 and the electrode Et2.
前記した感光体層部材PCLとしては、それの一方の端
面に高精細度の光学像が与えられた場合に、適当な強度
の電界の印加の下において、他方の端面に対して高精細
度の電荷像を発生させることができるような特性を有す
る光導電体材料(例えば、無機材であるアモルファス・
シリコン、有機材であるジアゾ顔料)を用いている。When a high-definition optical image is applied to one end surface of the photoreceptor layer member PCL described above, a high-definition optical image is formed on the other end surface under the application of an electric field of appropriate strength. Photoconductor materials with properties that allow them to generate charge images (e.g., inorganic amorphous materials)
It uses silicone and diazo pigment, which is an organic material.
前記した記録層部材CMLとしては、それの表面に付着
形成された静電潜像(電荷像)が長期間にわたりそのま
まのパターンで残留させうるような高い絶縁抵抗値を有
する材料(例えば、シリコン樹脂)、あるいはそれ自体
で電荷像を保持することにより記録の対象にされている
情報の記録を行なう記録層部材、印加された電界強度に
応じて生じる物理的・化学的な変化により記録の対象に
されている情報の記録が行なわれるような各種の材料(
例えば、液晶、PLZT、エレクトロクロミック材)を
用いている。また、前記した記録層部材CMLとしては
、例えば高分子材料中に液晶を分散させて構成した高分
子一液晶メモリ膜が使用されてもよい。The recording layer member CML described above is made of a material having a high insulation resistance value (for example, silicone resin) that allows the electrostatic latent image (charge image) formed on the surface of the recording layer member CML to remain in the same pattern for a long period of time. ), or a recording layer member that records information targeted for recording by retaining a charge image on its own; various materials on which information is recorded (
For example, liquid crystal, PLZT, electrochromic material) are used. Further, as the recording layer member CML, for example, a polymer-liquid crystal memory film formed by dispersing liquid crystal in a polymer material may be used.
撮像装置は、光学的なシャッタPSが開閉制御信号CT
L (L)により開放状態になされた場合に、撮像レン
ズTLによって被写体Oの光学像が透明基板BP1と透
明電極Etlとを介して感光体層部材PCLに結像され
る。さらに、電気的なシャッタであるスイッチSWの開
閉動作の制御に使用される開閉制御信号CTL (V)
によって、スイッチSWがオンの状態になされると、透
明電極Ellと電極Et2との間に電源Eから所定の電
圧(感光体層部材PCLと記録層部材CMLとの間の放
電開始電圧よりも高い電圧値の電圧)が印加されて、前
記した感光体層部材PCLに結像された被写体Oの光学
像と対応する記録が記録層部材CMLに対して行なわれ
る(第1図参照)。In the imaging device, an optical shutter PS receives an opening/closing control signal CT.
When it is in the open state by L (L), an optical image of the subject O is formed by the imaging lens TL on the photoreceptor layer member PCL via the transparent substrate BP1 and the transparent electrode Etl. Furthermore, an opening/closing control signal CTL (V) used to control the opening/closing operation of switch SW, which is an electric shutter.
When the switch SW is turned on, a predetermined voltage (higher than the discharge starting voltage between the photoconductor layer member PCL and the recording layer member CML) is applied from the power source E between the transparent electrode Ell and the electrode Et2. A voltage of a certain voltage value) is applied, and recording corresponding to the optical image of the subject O formed on the photoreceptor layer member PCL is performed on the recording layer member CML (see FIG. 1).
光学的なシャッタPSが開放状態になされた期間に撮像
レンズTLを介して入射した光束か透明電極Ellを透
過して感光体層部材PCLに入射すると、感光体層部材
PCLは電気抵抗値がそれに入射した光束の光量に応し
て変化して(暗抵抗(率)から明抵抗(率)に変化して
)、感光体層部材PCLの各部の電気抵抗値が被写体の
各部の光量と対応して変化している状態となる。When the light flux incident through the imaging lens TL passes through the transparent electrode Ell and enters the photoreceptor layer member PCL during the period when the optical shutter PS is in the open state, the electric resistance value of the photoreceptor layer member PCL changes to that value. The electric resistance value of each part of the photoreceptor layer member PCL changes according to the amount of light of the incident light flux (changes from dark resistance (rate) to bright resistance (rate)), and the electric resistance value of each part of the photoreceptor layer member PCL corresponds to the light amount of each part of the subject. It is in a state where it is changing.
この状態においてスイッチSWがオンの状態になされて
いて、前記した透明電極Etlと電極Et2との間に、
感光体層部材PCLと記録層部材CMLとの間の電圧を
放電開始電圧よりも高い電圧値の電圧にさせるような電
圧が印加されると、記録層部材CMLに対して、感光体
層部材PCLにおける電気抵抗値の変化の状態と対応し
ている電荷が付着されて、記録層部材CMLに被写体の
光学像と対応している静電潜像(電荷像)や電界の変化
に応じた物理的・化学的変化が記録される。In this state, the switch SW is turned on, and between the transparent electrode Etl and the electrode Et2,
When a voltage is applied that makes the voltage between the photoreceptor layer member PCL and the recording layer member CML higher than the discharge starting voltage, the photoreceptor layer member PCL A charge corresponding to the state of change in the electrical resistance value is attached to the recording layer member CML, and an electrostatic latent image (charge image) corresponding to the optical image of the subject and a physical charge corresponding to the change in the electric field are attached to the recording layer member CML. -Chemical changes are recorded.
すなわち、光(電磁放射線)の入射の有無により、感光
体層部材PCLの抵抗(率)が変化しく光の入射した部
位では、キャリアが発生して見掛は上の抵抗値が小さく
なり、暗抵抗率から明抵抗率と変化し)、この結果、記
録層部材CML両端の電圧としてこの暗抵抗率による電
圧変化と明抵抗率による電圧変化との差分がコントラス
ト電圧(コントラスト値)の変化として記録される。In other words, the resistance (rate) of the photoreceptor layer member PCL changes depending on whether or not light (electromagnetic radiation) is incident, and carriers are generated in the area where light is incident, and the apparent resistance value decreases, causing darkness. As a result, the difference between the voltage change due to the dark resistivity and the voltage change due to the bright resistivity is recorded as a change in contrast voltage (contrast value) as the voltage across the recording layer member CML. be done.
次に、第1図(A)〜(C)に示した撮像装置のシャッ
タタイミングについて詳述する。Next, the shutter timing of the imaging device shown in FIGS. 1(A) to 1(C) will be described in detail.
同図(A)及び(C)に示すように、本撮像装置では、
前記感光体層部材に記録の対象とされる電磁放射線束が
入射終了した後に、前記コントラスト値が略最大値とな
るように(tse<tm)、前記感光体層部材の抵抗値
、特に明抵抗値が適宜設定されている。As shown in (A) and (C) of the same figure, in this imaging device,
The resistance value, especially the bright resistance, of the photoreceptor layer member is adjusted so that the contrast value becomes approximately the maximum value (tse<tm) after the electromagnetic radiation flux to be recorded has finished being incident on the photoreceptor layer member. The value is set appropriately.
また、同図(A)及び(B)に示すように、本撮像装置
では、前記電極間に所定の電圧を供給している間に、前
記コントラスト値が略最大値となるよう(tflI<t
ef’)、例えば、前記感光体層部材の抵抗値、特に明
抵抗値を比較的大きく設定している。 ここで、第2図
(A)及び(B)に示した撮像装置の電気的な特性につ
いて第3図を参照して詳述する。In addition, as shown in FIGS. 3A and 3B, in this imaging device, while a predetermined voltage is being supplied between the electrodes, the contrast value becomes approximately the maximum value (tflI<t
ef'), for example, the resistance value, particularly the bright resistance value, of the photoreceptor layer member is set relatively large. Here, the electrical characteristics of the imaging device shown in FIGS. 2(A) and 2(B) will be described in detail with reference to FIG. 3.
感光体層部材PCLの等価抵抗をRe、同等価容量をC
cとし、記録層部材CMLの等価抵抗をR1、同等価容
量をC,+とする。すると、撮像装置の等価回路は第2
図のようになり、記録層部材CMLの両端電圧Vについ
てステップ応答を求めると、
となる。ただし、
このように、記録層部材CMLの両端電圧Vは、電圧印
加直後では、電圧VOを容量分割(各容量の逆数比)し
たものとなり、時間の経過とともに抵抗分割に移行して
いく。すなわぢ、記録層部材CML上のコントラスト電
圧(明部電位と暗部電位の差)は、電気的シャッタによ
る電圧印加時間に応じて過渡的に変化し、その過渡特性
は感光体層部材CMLの抵抗値、特に明抵抗値に依存し
ている。したがって、前記記録層部材CMLのコントラ
ス]・値が略最大値となる時間は、前記感光体層部材の
抵抗値、特に明抵抗値Peを適宜設定することにより、
任意に調整できる。The equivalent resistance of the photoreceptor layer member PCL is Re, and the equivalent capacitance is C.
c, the equivalent resistance of the recording layer member CML is R1, and the equivalent capacitance is C,+. Then, the equivalent circuit of the imaging device is
As shown in the figure, when the step response is calculated for the voltage V across the recording layer member CML, it becomes as follows. However, in this way, the voltage V across the recording layer member CML becomes the capacitance-divided voltage VO (reciprocal ratio of each capacitance) immediately after voltage application, and shifts to resistance-divided voltage as time passes. In other words, the contrast voltage (difference between bright area potential and dark area potential) on the recording layer member CML changes transiently depending on the voltage application time by the electric shutter, and its transient characteristics depend on the photoreceptor layer member CML. It depends on the resistance value, especially the bright resistance value. Therefore, the time when the contrast value of the recording layer member CML reaches a substantially maximum value can be determined by appropriately setting the resistance value of the photoreceptor layer member, particularly the bright resistance value Pe.
Can be adjusted arbitrarily.
つまり、コントラスト電圧が最大値となるの電圧印加時
間は、光導電層のインピーダンス(等価容量及び抵抗)
に依存しており、光導電層の明抵抗率が大きい場合、記
録層上に生じるコントラスト電位を最大とするためには
長期間(tl)かかり(同図[A] ) 、光導電層の
明抵抗率が小さい場合、短期間(t2)で記録層上のコ
ントラスト電位が最大となる(同図[B] )。In other words, the voltage application time for which the contrast voltage reaches its maximum value is determined by the impedance (equivalent capacitance and resistance) of the photoconductive layer.
When the bright resistivity of the photoconductive layer is large, it takes a long time (tl) to maximize the contrast potential generated on the recording layer (Figure [A]); When the resistivity is small, the contrast potential on the recording layer reaches its maximum in a short period of time (t2) (see [B] in the same figure).
この原理にもとすいて、本撮像装置においては、光学的
なシャッタにより前記感光体層部材に記録の対象とされ
る電磁放射線束が入射終了した後に、前記コントラスト
値が略最大値となるように前記感光体層部材PCLの抵
抗値が設定されている(tsa<ta)。つまり、前記
記録層部材CML(記録層)上のコントラスト値(明部
電位と暗部電位の差であるコントラスト電圧)は、前記
感光体層部材PCLの特性(明抵抗及び暗抵抗)に応じ
て過渡的に変化し、前記感光体層部材CMLに記録の対
象とされる電磁放射線束が入射終了した後に、コントラ
スト値が略最大となる。したがって、入射した電磁放射
線束のほとんどが無駄なく感光体層部材CMLに撮像さ
れ、良好なコントラストを有する高品位な撮像が得られ
る。Based on this principle, in the present imaging device, after the electromagnetic radiation flux to be recorded has finished being incident on the photoreceptor layer member by an optical shutter, the contrast value becomes approximately the maximum value. The resistance value of the photoreceptor layer member PCL is set to (tsa<ta). In other words, the contrast value (contrast voltage, which is the difference between the bright area potential and the dark area potential) on the recording layer member CML (recording layer) is transient depending on the characteristics (bright resistance and dark resistance) of the photoreceptor layer member PCL. After the electromagnetic radiation flux to be recorded finishes being incident on the photoreceptor layer member CML, the contrast value reaches a substantially maximum value. Therefore, most of the incident electromagnetic radiation flux is imaged on the photoreceptor layer member CML without waste, and high-quality imaging with good contrast can be obtained.
また、本撮像装置においては、電気的なシャッタにより
前記電極間に所定の電圧を供給している間に、前記コン
トラスト値が略最大値となるように前記感光体層部材の
抵抗値が設定されている(tIII<ter)。ツまり
、前記記録層部材CML(記録層)上のコントラスト値
(明部電位と暗部電位の差であるコントラスト電圧)は
、前記感光体層部材PCLの特性(明抵抗及び暗抵抗)
に応じて過渡的に変化し、電極間に所定の電圧を供給し
ている間に、コントラスト値が略最大となる。Further, in the present imaging device, while a predetermined voltage is being supplied between the electrodes by an electric shutter, the resistance value of the photoreceptor layer member is set so that the contrast value becomes approximately the maximum value. (tIII<ter). In other words, the contrast value on the recording layer member CML (recording layer) (contrast voltage, which is the difference between the bright area potential and the dark area potential) is determined by the characteristics (bright resistance and dark resistance) of the photoreceptor layer member PCL.
The contrast value changes transiently according to the contrast value, and the contrast value becomes approximately maximum while a predetermined voltage is being supplied between the electrodes.
したがって、前記感光体層部材CMLに撮像された電磁
放射線束のほとんどが無駄なく記録層部材CML (記
録層)上に記録され、良好なコントラストを有する高品
位な記録が得られる。Therefore, most of the electromagnetic radiation flux imaged on the photoreceptor layer member CML is recorded on the recording layer member CML (recording layer) without waste, and high-quality recording with good contrast can be obtained.
このように、本撮像装置によれば、撮像状態に応して光
学的なシャッタ時間や電気的なシャッタ時間(電界印加
時間)を変化させても、撮像結果が変動せず、高品位な
撮像をなすことができる。In this way, according to this imaging device, even if the optical shutter time or electrical shutter time (electric field application time) is changed depending on the imaging state, the imaging results do not change and high-quality imaging can be achieved. can be done.
また、第4図(B)及び(C)に示すように、感光体層
部材PCLが光履歴を有する場合では、光学的シャッタ
閉塞後でも、光励起されたキャリアが残存する。この場
合では、同図(A)及び(C)に示すように、残存キャ
リアがなくなった後に、前記コントラスト値が略最大値
となるようにすればよい(te < tm )。Further, as shown in FIGS. 4(B) and 4(C), when the photoreceptor layer member PCL has an optical history, optically excited carriers remain even after the optical shutter is closed. In this case, as shown in (A) and (C) of the same figure, after the remaining carriers are gone, the contrast value may be set to approximately the maximum value (te < tm).
(発明の効果)
以上詳述したように、本発明によれば、撮像状態に応じ
て光学的な、シャッタの開放時間や電気的シャッタ時間
を任意に可変設定しても、良好なコントラストを有する
高品位な撮像をなすことができる。(Effects of the Invention) As detailed above, according to the present invention, good contrast can be achieved even if the optical shutter opening time and the electrical shutter time are arbitrarily set variably according to the imaging state. High-quality imaging can be achieved.
第1図(A)〜(C)は本発明になる撮像装置の一実施
例を示す図で、シャッタタイミングを示す図、第2図(
A)及び(B)は撮像装置の構成図、第3図は撮像装置
の等価回路、第4図(A)〜(C)は変形例を示す図、
第5図は一般例を説明する図、第6図は従来のシャッタ
タイミングを示す図、第7図(A)及び(B)は電界印
加時間と記録層部材における電圧との関係を示す図であ
る。
0・・・被写体、TL・・・撮像レンズ、PS・・・光
学的なシャッタ、
Etl・・・透明電極、Et2・・・電極、PCL・・
・光導電体による感光体層部材、CML・・・記録層部
材、
SW・・・スイッチ、E・・・電源、
R・・・感光体層部材の等価抵抗、
C・・・感光体層部材の等価容量、
R・・・記録層部材の等価抵抗、
C・・・記録層部材の等価容量。
特許出願人 日本ビクター株式会社第1図
(△) (B)
第2図
第3図
第十図FIGS. 1(A) to 1(C) are diagrams showing an embodiment of the imaging device according to the present invention, and FIG.
A) and (B) are configuration diagrams of the imaging device, FIG. 3 is an equivalent circuit of the imaging device, and FIGS. 4(A) to (C) are diagrams showing modified examples.
Fig. 5 is a diagram explaining a general example, Fig. 6 is a diagram showing conventional shutter timing, and Figs. 7 (A) and (B) are diagrams showing the relationship between electric field application time and voltage in the recording layer member. be. 0...Subject, TL...Imaging lens, PS...Optical shutter, Etl...Transparent electrode, Et2...Electrode, PCL...
・Photoconductor layer member by photoconductor, CML...Recording layer member, SW...Switch, E...Power source, R...Equivalent resistance of photoconductor layer member, C...Photoconductor layer member R: Equivalent resistance of the recording layer member, C: Equivalent capacitance of the recording layer member. Patent applicant: Victor Japan Co., Ltd. Figure 1 (△) (B) Figure 2 Figure 3 Figure 10
Claims (4)
体層部材及び記録層部材に対して、前記電極間に所定の
電圧を供給するとともに、前記感光体層部材に記録の対
象とされる電磁放射線束を入射させて、 前記感光体層部材により過渡的に生じたコントラスト値
として、前記記録層部材に記録の対象にされている電磁
放射線情報を記録させる撮像装置において、 前記感光体層部材に記録の対象とされる電磁放射線束が
入射終了した後に、前記コントラスト値が略最大値とな
るようにしたことを特徴とする撮像装置。(1) A predetermined voltage is applied between the photoreceptor layer member and the recording layer member disposed between the first electrode and the second electrode, and recording is performed on the photoreceptor layer member. In an imaging device, the electromagnetic radiation information targeted for recording is recorded on the recording layer member as a contrast value transiently generated by the photoreceptor layer member by making the electromagnetic radiation flux targeted for recording incident. An imaging device characterized in that the contrast value reaches a substantially maximum value after the electromagnetic radiation flux to be recorded finishes being incident on the photoreceptor layer member.
体層部材及び記録層部材に対して、前記電極間に所定の
電圧を供給するとともに、前記感光体層部材に記録の対
象とされる電磁放射線束を入射させて、 前記感光体層部材により過渡的に生じたコントラスト値
として、前記記録層部材に記録の対象にされている電磁
放射線情報を記録させる撮像装置において、 前記電極間に所定の電圧を供給している間に、前記コン
トラスト値が略最大値となるようにしたことを特徴とす
る撮像装置。(2) A predetermined voltage is applied between the photoreceptor layer member and the recording layer member disposed between the first electrode and the second electrode, and recording is performed on the photoreceptor layer member. In an imaging device, the electromagnetic radiation information targeted for recording is recorded on the recording layer member as a contrast value transiently generated by the photoreceptor layer member by making the electromagnetic radiation flux targeted for recording incident. An imaging device characterized in that the contrast value is approximately at a maximum value while a predetermined voltage is being supplied between the electrodes.
体層部材及び記録層部材に対して、電気的なシャッタに
より前記電極間に所定の電圧を供給するとともに、光学
的なシャッタにより前記感光体層部材に記録の対象とさ
れる電磁放射線束を入射させて、 前記感光体層部材の明抵抗及び暗抵抗により過渡的に生
じたコントラスト値として、前記記録層部材に記録の対
象にされている電磁放射線情報を記録させる撮像装置に
おいて、 前記光学的なシャッタにより前記感光体層部材に記録の
対象とされる電磁放射線束が入射終了した後に、前記コ
ントラスト値が略最大値となるように前記感光体層部材
の抵抗値を設定したことを特徴とする撮像装置。(3) A predetermined voltage is supplied between the electrodes by an electric shutter to the photoreceptor layer member and the recording layer member disposed between the first electrode and the second electrode, and an optical An electromagnetic radiation flux to be recorded is made incident on the photoreceptor layer member by a shutter, and is recorded on the recording layer member as a contrast value transiently generated by the bright resistance and dark resistance of the photoreceptor layer member. In an imaging device for recording electromagnetic radiation information targeted for recording, after the electromagnetic radiation flux to be recorded ends being incident on the photoreceptor layer member by the optical shutter, the contrast value reaches a substantially maximum value. An imaging device characterized in that a resistance value of the photoreceptor layer member is set so that the following is true.
体層部材及び記録層部材に対して、電気的なシャッタに
より前記電極間に所定の電圧を供給するとともに、光学
的なシャッタにより前記感光体層部材に記録の対象とさ
れる電磁放射線束を入射させて、 前記感光体層部材の明抵抗及び暗抵抗により過渡的に生
じたコントラスト値として、前記記録層部材に記録の対
象にされている電磁放射線情報を記録させる撮像装置に
おいて、 前記電気的なシャッタにより前記電極間に所定の電圧を
供給している間に、前記コントラスト値が略最大値とな
るように前記感光体層部材の抵抗値を設定したことを特
徴とする撮像装置。(4) A predetermined voltage is supplied between the electrodes by an electric shutter to the photoreceptor layer member and the recording layer member disposed between the first electrode and the second electrode, and an optical An electromagnetic radiation flux to be recorded is made incident on the photoreceptor layer member by a shutter, and is recorded on the recording layer member as a contrast value transiently generated by the bright resistance and dark resistance of the photoreceptor layer member. In an imaging device for recording electromagnetic radiation information, which is a target of An imaging device characterized in that a resistance value of a body layer member is set.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2336123A JPH04207588A (en) | 1990-11-30 | 1990-11-30 | Image pickup device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2336123A JPH04207588A (en) | 1990-11-30 | 1990-11-30 | Image pickup device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH04207588A true JPH04207588A (en) | 1992-07-29 |
Family
ID=18295934
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2336123A Pending JPH04207588A (en) | 1990-11-30 | 1990-11-30 | Image pickup device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH04207588A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9491376B2 (en) | 2009-02-23 | 2016-11-08 | Flir Systems, Inc. | Flat field correction for infrared cameras |
-
1990
- 1990-11-30 JP JP2336123A patent/JPH04207588A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9491376B2 (en) | 2009-02-23 | 2016-11-08 | Flir Systems, Inc. | Flat field correction for infrared cameras |
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