JPH04205704A - Production of thin film magnetic head - Google Patents
Production of thin film magnetic headInfo
- Publication number
- JPH04205704A JPH04205704A JP33277390A JP33277390A JPH04205704A JP H04205704 A JPH04205704 A JP H04205704A JP 33277390 A JP33277390 A JP 33277390A JP 33277390 A JP33277390 A JP 33277390A JP H04205704 A JPH04205704 A JP H04205704A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- film magnetic
- magnetic head
- glass
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 19
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 239000011521 glass Substances 0.000 claims abstract description 20
- 230000005496 eutectics Effects 0.000 claims abstract description 15
- 229910017767 Cu—Al Inorganic materials 0.000 claims abstract description 13
- 230000008018 melting Effects 0.000 claims abstract description 7
- 238000002844 melting Methods 0.000 claims abstract description 7
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 6
- 239000000956 alloy Substances 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims abstract description 5
- 230000001681 protective effect Effects 0.000 claims description 4
- 239000000758 substrate Substances 0.000 abstract description 9
- 229910000859 α-Fe Inorganic materials 0.000 abstract description 7
- 238000000137 annealing Methods 0.000 abstract description 5
- 230000003746 surface roughness Effects 0.000 abstract description 5
- 238000010030 laminating Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 235000007173 Abies balsamea Nutrition 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 241000218685 Tsuga Species 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
Landscapes
- Magnetic Heads (AREA)
Abstract
Description
【発明の詳細な説明】
ｆａｌ産業上の利用分野
この発明は、Ｃｕ−Ａｌ系合金からなるボンディングパ
ッドを有するウェハに、ガラス材からなる保護板を形成
する方法に関する。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application This invention relates to a method for forming a protective plate made of glass material on a wafer having bonding pads made of Cu--Al alloy.
（ｂ）従来の技術
薄膜磁気ヘッドにおいては、ウェハを保護するためガラ
スフリントが用いられている。ガラスフリットはフェラ
イト基板上に印刷されて薄膜磁気ヘッドウェハに重ねら
れる。そして両者が前記ガラスフリットの溶融温度以上
でアニールされてガラスフリットが溶融されウェハが被
覆保護される。そしてこの後、ウェハのボンディングパ
ッドと基板のボンディングパッドとがワイヤポンディン
グされ接続れる。(b) Prior Art In thin film magnetic heads, glass flint is used to protect the wafer. The glass frit is printed on a ferrite substrate and overlaid onto a thin film magnetic head wafer. Then, both are annealed at a temperature higher than the melting temperature of the glass frit to melt the glass frit and protect the wafer. Thereafter, the bonding pads on the wafer and the bonding pads on the substrate are connected by wire bonding.
（Ｃ１発明が解決しようとする課題
ところが従来の薄膜磁気ヘッドにおいて、ワイヤボンダ
ビリティが劣化する不具合がしばしば生じていた。本発
明者等がこの点について鋭意・検討を行った結果、この
現象はＣｕ−Ａｌ系合金からなるボンディングパッドが
共晶反応を起こしてパッド表面の粗度が増大する現象、
いわゆるヒルロック現象によるものであることが分かっ
た。(C1 Problem to be solved by the invention) However, in conventional thin film magnetic heads, a problem often occurred in which wire bondability deteriorated.As a result of the inventors' intensive study on this point, this phenomenon was found to be A phenomenon in which a bonding pad made of an Al-based alloy undergoes a eutectic reaction and the roughness of the pad surface increases.
It turned out that this was due to the so-called hillock phenomenon.
る薄膜磁気へソドの製造方法を提供することにある。An object of the present invention is to provide a method for manufacturing a thin film magnetic heel.
（ｄ）課題を解決するための手段
この発明は、Ｃｕ−Ａｌ系合金からなるボンディングバ
ソドを有する薄膜磁気へソドウエハに、Ｃｕ −ＡＩの
共晶点以下の溶融点を有するガラスフリットを重ね、両
者をアニールして前記ウェハ上にガラス保護板を形成す
ることを特徴とする。(d) Means for Solving the Problems This invention provides a thin film magnetic hemlock wafer having a bonding bath made of a Cu-Al alloy, overlaid with a glass frit having a melting point below the eutectic point of Cu-AI. The method is characterized in that a glass protective plate is formed on the wafer by annealing.
ｔｅ１作用
この発明においては、薄膜磁気へソドウエハにはＣｕ−
Ａｌの共晶点以下の溶融点を有するガラスフリットが重
ねられてアニールされる。したがってアニール温度はＣ
ｕ−Ａｌの共晶点以下の温度で十分であって、そのため
、Ｃｕ−Ａｌが共晶反応を起こして表面粗度が増大して
しまう、ということがない（「）実施例
第１図（Ａ）〜（Ｃ）はこの発明の実施例である薄膜磁
気ヘッドの製造方法を説明する図である図において１は
保護板用のフェライト基板であり、このフェライト基板
１上にはフリットガラス２が印刷される。このフリット
ガラスはＣｕ−Ａｌの共晶点（５４８°Ｃ）よりも低い
軟化溶融温度を有するものが用いられる。フェライト基
板１へのフリットガラス２印刷後、同図（Ｂ）に示した
ようにフェライト基板１は所定寸法に切断、洗浄される
。そして同図（Ｃ）に示したように薄膜磁気へラドウェ
ハ３上にセットされ、フリットガラス２の軟化溶融点以
上、かつ、Ｃｕ−Ａｌの共晶点以下の温度でアニールさ
れて接着される。−この後、薄膜磁気へソドウエハ３は
通常通り行分断、円筒醜研削、テープ研磨、コンビ化、
チップ切断、支持台接着、ＦＰＣ接着、パッドクリーニ
ング、ＩＣグイボンドの工程後、ワイヤボンディングさ
れる。te1 effect In this invention, the thin film magnetic wafer is made of Cu-
Glass frits having a melting point below the eutectic point of Al are stacked and annealed. Therefore, the annealing temperature is C
The temperature below the eutectic point of u-Al is sufficient, and therefore, the surface roughness does not increase due to the eutectic reaction of Cu-Al. A) to (C) are diagrams illustrating a method of manufacturing a thin film magnetic head according to an embodiment of the present invention. In the diagram, 1 is a ferrite substrate for a protection plate, and a frit glass 2 is placed on this ferrite substrate 1. The frit glass used has a softening and melting temperature lower than the eutectic point (548°C) of Cu-Al.After printing the frit glass 2 on the ferrite substrate 1, the image shown in FIG. As shown, the ferrite substrate 1 is cut to a predetermined size and cleaned.Then, as shown in FIG. - The film is annealed and bonded at a temperature below the eutectic point of Al. - After this, the thin film magnetic wafer 3 is subjected to the usual row cutting, cylindrical grinding, tape polishing, combination processing,
After chip cutting, support adhesion, FPC adhesion, pad cleaning, and IC guide bonding steps, wire bonding is performed.
なお、第２図はガラス保護板が形成された薄膜磁気ヘッ
ドの断面図である。Note that FIG. 2 is a sectional view of a thin film magnetic head on which a glass protective plate is formed.
この実施例ではフリソＩ・ガラス２の接着時のアニール
温度がＣｕ−Ａｌの共晶点以下であるため、Ｃｕ−Ａｌ
系の合金からなるボンディングパッドが共晶反応を起こ
してしまうことがなく、ボンディングパッドの表面粗度
が悪くなってしまう問題を防止することができる。この
ため安定したワイヤボンダビリティを得ることができ、
信頼性および生産性を向上させることができる。In this example, since the annealing temperature during adhesion of Friso I/glass 2 is below the eutectic point of Cu-Al, Cu-Al
The bonding pad made of the alloy of this type does not cause a eutectic reaction, and the problem of poor surface roughness of the bonding pad can be prevented. Therefore, stable wire bondability can be obtained,
Reliability and productivity can be improved.
（ｇ＋発明の効果
以上のようにこの発明によればボンディングパッドの表
面粗度の低下を防止することができ、安定したワイヤポ
ンダビリティを得ることができ、その結果、薄膜磁気ヘ
ッドの信頼性、生産性を向上させることができる。(g+ Effects of the Invention As described above, according to the present invention, it is possible to prevent a decrease in the surface roughness of the bonding pad, and to obtain stable wire bondability. As a result, the reliability of the thin film magnetic head is improved. Productivity can be improved.
第１図（Ａ）〜（Ｃ）は薄膜磁気ヘッドの製造工程を説
明する図、第２図は薄膜磁気ヘッドの断面図である。
１−フェライト基板、２−フリットガラス、３−薄膜磁
気へソドウエハ。FIGS. 1A to 1C are diagrams illustrating the manufacturing process of a thin film magnetic head, and FIG. 2 is a sectional view of the thin film magnetic head. 1-Ferrite substrate, 2-Frit glass, 3-Thin film magnetic hemetal wafer.
Claims (1)
有する薄膜磁気ヘッドウェハに、Ｃｕ−Ａｌの共晶点以
下の溶融点を有するガラスフリットを重ね、両者をアニ
ールして前記ウェハ上にガラス保護板を形成することを
特徴とする薄膜磁気ヘッド製造方法。(1) A glass frit having a melting point below the eutectic point of Cu-Al is layered on a thin film magnetic head wafer having a bonding pad made of a Cu-Al alloy, and both are annealed and a glass protective plate is placed on the wafer. A method for manufacturing a thin film magnetic head, characterized by forming a thin film magnetic head.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33277390A JPH04205704A (en) | 1990-11-28 | 1990-11-28 | Production of thin film magnetic head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33277390A JPH04205704A (en) | 1990-11-28 | 1990-11-28 | Production of thin film magnetic head |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04205704A true JPH04205704A (en) | 1992-07-27 |
Family
ID=18258671
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP33277390A Pending JPH04205704A (en) | 1990-11-28 | 1990-11-28 | Production of thin film magnetic head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04205704A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7760039B2 (en) | 2002-10-15 | 2010-07-20 | Marvell World Trade Ltd. | Crystal oscillator emulator |
-
1990
- 1990-11-28 JP JP33277390A patent/JPH04205704A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7760039B2 (en) | 2002-10-15 | 2010-07-20 | Marvell World Trade Ltd. | Crystal oscillator emulator |
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