JPH04192486A - Semiconductor light-emitting device - Google Patents
Semiconductor light-emitting deviceInfo
- Publication number
- JPH04192486A JPH04192486A JP2324237A JP32423790A JPH04192486A JP H04192486 A JPH04192486 A JP H04192486A JP 2324237 A JP2324237 A JP 2324237A JP 32423790 A JP32423790 A JP 32423790A JP H04192486 A JPH04192486 A JP H04192486A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- contact layer
- wafer
- photoresist
- gaas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 16
- 238000005253 cladding Methods 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 16
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 11
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 5
- 230000004888 barrier function Effects 0.000 abstract description 3
- 238000001312 dry etching Methods 0.000 abstract description 3
- 239000002184 metal Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 238000009826 distribution Methods 0.000 description 4
- 238000005452 bending Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 241000257465 Echinoidea Species 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Landscapes
- Led Devices (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は半導体発光装置に関し、特に、シシットキー
バリアを利用した電流狭窄を高精度化てきるものを実現
するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a semiconductor light emitting device, and in particular, to realizing a device that can achieve highly accurate current confinement using a Schittky barrier.
第２図は文献人ｐｐｌｉｅｄ Ｐｈｙｓｉｃｓ Ｌｅｔ
ｔｅｒｓ、 ３１巻。Figure 2 is a reference person pplied Physics Let
ters, vol. 31.
４６６ページ、 １９７７年に記載された従来の半導体
レーザ装置を示す断面図で、
図において、（１）はｎ型ＧａＡｓ基板、（２）はｎ型
Ａ ｌ ｏ−３ｃ”ｏ−７人Ｓクラッド層、（３）はア
ンドープＧａ人ｓ活性層、（４）はｐ聖人１０−、Ｇａ
人ｓクラッド層、（５）はｐ型ＧａＡｓオーミック・コ
ンタクト層、（７）は金属電極、（８）は ５ｉＯｚ膜
、（９）は ｓｒｏ、 Ｍ（８）のストライプ状開口部
、（ＩＯＡ）は活性層（３）の屈曲部（活性領域）であ
る。そして、第２図（ａ）は、開口部（９）が活性領域
（ＩＯＡ）と一致した理想的な場合、第２図（ｂ）は開
口部（９）と活性領域（ＩＯＡ）との位置がずれた場合
を示している。Page 466 is a cross-sectional view showing a conventional semiconductor laser device described in 1977. In the figure, (1) is an n-type GaAs substrate, (2) is an n-type Alo-3c"o-7 S cladding. layer, (3) is the undoped Ga active layer, (4) is the p Saint 10-, Ga
cladding layer, (5) is p-type GaAs ohmic contact layer, (7) is metal electrode, (8) is 5iOz film, (9) is sro, M(8) striped opening, (IOA) is a bent portion (active region) of the active layer (3). FIG. 2(a) shows the ideal case where the opening (9) coincides with the active area (IOA), and FIG. 2(b) shows the position of the opening (9) and the active area (IOA). This shows a case where the
次に動作について説明する。金属電極（７）間に、活性
層（３）のＰｎ接合に対して順方向となる電圧を印加す
ると ５１０２の開口部（９）に狭窄された電流が流れ
、活性層（３）内で発光再結合が生じる。この発生した
光はクラッド層［２１，（４１と活性層（３）との間の
屈折率段差、及び、活性層（３）の屈曲に起因する実効
的屈折率分布で構成される光導波路によって導波され、
対向する襞襞面で構成されるファブリ・ベロー共振器内
てレーザ発振に至る。ここで第２図（ａ）の場合にζよ
、電流分布で決まる利得分布と、活性層（３）の屈曲に
よる屈折率分布が一致しているので、高出力まで安定に
動作するのに対し、第２図（ｂ）のように位置のずれた
場合、例えば光出力−電流特性の直線性が損われるなど
の性能劣化が発生する。Next, the operation will be explained. When a voltage is applied between the metal electrodes (7) in a forward direction to the Pn junction of the active layer (3), a constricted current flows through the opening (9) of 5102, and light is emitted within the active layer (3). Recombination occurs. This generated light is transmitted through an optical waveguide consisting of an effective refractive index distribution due to the refractive index step between the cladding layer [21, (41) and the active layer (3), and the bending of the active layer (3). wave guided,
Laser oscillation occurs within a Fabry-Bello resonator made up of opposing fold surfaces. In the case of Fig. 2(a), the gain distribution determined by the current distribution and the refractive index distribution due to the bending of the active layer (3) match, so the operation is stable up to high output. , if the position shifts as shown in FIG. 2(b), performance deterioration occurs, such as loss of linearity of the optical output-current characteristic, for example.
従来の半導体レーザ装置は思上のように形成されていた
ので、開口部と屈曲部との位置合わせに高精度を必要と
し、かつ、乙の位置合わせのばらつきによって、素子特
性のばらつきが発生する問題点があった。Conventional semiconductor laser devices are formed in an imaginary manner, requiring high precision in alignment between the aperture and the bent portion, and variations in alignment can cause variations in device characteristics. There was a problem.
この発明は上記のような問題点を解消するためになされ
たもので、位置合わせを必要としない比較的簡単な工程
で電流狭窄部と活性層屈曲部を一致させることが可能で
あることから、良好でかっ揃った特性を有する半導体発
光装置を得ることを目的とする。This invention was made to solve the above-mentioned problems, and since it is possible to align the current confinement part and the active layer bent part with a relatively simple process that does not require alignment, An object of the present invention is to obtain a semiconductor light emitting device having good and consistent characteristics.
この発明に係る半導体発光装置は、活性層の屈曲に対応
して、ウェハ最表面に突起部を有するＬ７−ザウエハに
おいて、
ｆｉｌ： ＧａＡｓコンタクト層の上にさらにＡＩ Ｇ
ａＡｓ 層を設け、
（２）：表面が平たんとなるようにフォトレジス）・を
塗布し、
（３）： ドライエツチングによって、ウェハ突起部
が露出するように部分的にフォトレジストを除去し、
（４）： フォトレジストをマスクとして、ウェハ突起
部のＡｌＧａＡｓ層をエツチングして除去し、ＧａＡｓ
コンタクト層が露出するようにし、
（５）ニ一部Ｇ１Ａｓコンタクト層が露出し、大部分が
人ＩＧａ人Ｓであるウェハ表面に金属電極を形成するよ
うにしてものである。In the semiconductor light emitting device according to the present invention, in the L7-wafer having a protrusion on the outermost surface of the wafer corresponding to the bending of the active layer, an AI G layer is further formed on the fil: GaAs contact layer.
An aAs layer is provided, (2): a photoresist is applied so that the surface is flat, (3) the photoresist is partially removed by dry etching to expose the wafer protrusions, (4): Using the photoresist as a mask, the AlGaAs layer on the wafer protrusion is etched and removed.
(5) Metal electrodes are formed on the wafer surface where the contact layer is partially exposed and most of the G1As contact layer is exposed.
この発明における表面電極は、活性層凸部に一致した
ＧａＡｓに接触する部分はオーミック電極となり電流が
流れ、それ以外のＡｌＧａＡｓに接触する部分はンヨッ
）・キー電極となり電流が阻止される。The surface electrode in this invention corresponds to the convex portion of the active layer.
The part in contact with GaAs becomes an ohmic electrode, through which current flows, and the other part in contact with AlGaAs becomes a key electrode, blocking current flow.
従って、電流の流れる部分が活性層凸部位置に自己整合
的に形成されるので位置合わせの工程を必要としない。Therefore, since the portion through which the current flows is formed in a self-aligned manner at the position of the active layer convex portion, there is no need for an alignment step.
以下、この発明の一実施例を図について説明する。第１
図はこの発明の一実施例による半導体レーザ装置の製造
工程を示す断面図で、図中符号（１）〜（５］、［７１
は前記従来のものと−につきその説明は省略する。図に
おいて、（６）はｎ型あるいはｐ型あるいは絶縁圧のＡ
ｊ ６−３Ｇａｌ）−７Ａｓ層、（ＩＯＢ）は上に凸の
活性層屈曲部である。An embodiment of the present invention will be described below with reference to the drawings. 1st
The figure is a cross-sectional view showing the manufacturing process of a semiconductor laser device according to an embodiment of the present invention, with reference numbers (1) to (5) and [71] in the figure.
is the same as the conventional one, so the explanation thereof will be omitted. In the figure, (6) is n-type, p-type, or insulation voltage A.
j 6-3Gal)-7As layer, (IOB) is an upwardly convex bent portion of the active layer.
次に、製造工程について説明する。初めに（１１図にお
いて、ｎ型Ｇ１Ａｓ基板（１）に写真製版の手法を用い
た選択エツチングによって突起部を形成した後、有機金
属気相結晶成長（ＭＯＣＶ−Ｄ）あるいは分子線エピタ
キシー（ＭＢＥ）等の気相結晶成長法によって、基板（
１）の突起に対応した屈曲部（ＩＯＢ）を有する Ｇａ
Ａｓ、人ｌＧａ人ｓ゛多層膜（２１〜（６１を成長する
。Next, the manufacturing process will be explained. First (in Figure 11, protrusions are formed on the n-type G1As substrate (1) by selective etching using a photolithography technique, and then metal organic vapor phase crystal growth (MOCV-D) or molecular beam epitaxy (MBE) is performed. The substrate (
1) has a bent part (IOB) corresponding to the protrusion of Ga
As, Ga and S multilayer films (21 to 61) are grown.
次に、（ｂ）図において、ウェハ表面にフォトレジスト
（１］）を塗布する。この時、比較的粘度の高いレレス
１．（１１）を用いることによって、レジスト表面にウ
ニへの突起が反影されず、平たんになるようにする。Next, in figure (b), a photoresist (1]) is applied to the wafer surface. At this time, relatively high viscosity Reless 1. By using (11), the projections of the sea urchins are not reflected on the resist surface and the resist surface becomes flat.
ついて（Ｃ）図において、酸素プラズマを用いたドライ
エツチングによって、ウェハの突起部が露出し、他の部
分には残るようにフォ１−レジス１−（Ｉｌｌを部分的
に除去する。In FIG. 1C, dry etching using oxygen plasma exposes the protrusions of the wafer and partially removes the photoresist 1-(Ill) so that it remains in other areas.
さらに（ｄ ）図において、フォトレジスト（１１）１
ｅマスクとして、ウェハ表面の突起部（人Ｉ ＧａＡｓ
７１の一部）をエツチング除去する。エッチャントと
しては、例えば、硫酸と過酸化水素水の混合液を用いる
ことができる。Furthermore, in figure (d), photoresist (11) 1
As an e-mask, the protrusions on the wafer surface (I GaAs
71) is removed by etching. As the etchant, for example, a mixture of sulfuric acid and hydrogen peroxide can be used.
最後に（６１図のように、フォトレジスト（１１）を除
去した後、ウェハ表・裏画面に金属電極（７）を真空蒸
着等の方法で形成してから、各チップに分離して素子が
完成する。Finally (as shown in Figure 61), after removing the photoresist (11), metal electrodes (7) are formed on the front and back surfaces of the wafer by a method such as vacuum evaporation, and then the chips are separated into individual chips. Complete.
なお、上記実施例の動作は基本的には従来例と同様であ
るが、電流狭窄の機構が異なる。すなわち、表金膜電極
の内、ＧａＡｓに接触する部分はオーミック電極が形成
され、電流が流れるのに対し、人ＩＧａ人Ｓに接触する
部分はショットキー電極となり電流が阻止される。そし
て、電流狭窄部は活性層の屈曲部と自動的に一致した位
置に形成されるので、高出力動作時まで、良好なかつ揃
った特性を有するレーザが実現できる。The operation of the above embodiment is basically the same as that of the conventional example, but the mechanism of current confinement is different. That is, the part of the surface gold film electrode that contacts GaAs is formed as an ohmic electrode and current flows through it, whereas the part that contacts the person IGa person S becomes a Schottky electrode and current is blocked. Since the current confinement portion is formed at a position that automatically coincides with the bent portion of the active layer, a laser having good and uniform characteristics can be realized even during high output operation.
なお、上記実施例てはＧａＡｓ及び人ｌ。−３Ｇａｏ−
７人Ｓを材料として用いた場合を示したが、人４Ａｓ組
成はこれに限定するものではない。また、半導体レーザ
装置を構成できる他の半導体材料、例えばＩｎＧａＡｓ
Ｐ、 ＩｎＧａＰ、 （人Ｉ Ｇａ） ＩｎＰ等を用い
ても良い。Note that in the above embodiments, GaAs and GaAs were used. -3Gao-
Although the case where 7As is used as the material is shown, the composition of 4As is not limited to this. In addition, other semiconductor materials that can constitute the semiconductor laser device, such as InGaAs, may also be used.
P, InGaP, (IGa) InP, etc. may be used.
また、ｐＦｎ反対の導電型でも構成可能である。Further, it is also possible to configure the conductivity type opposite to pFn.
また、半導体レーザに限らず、端面発光型ＬＥＤ、スー
パールミネッセント・ダイオード等の他の半導体発光装
置にも適用できる。Further, the present invention is not limited to semiconductor lasers, and can be applied to other semiconductor light emitting devices such as edge-emitting LEDs and superluminescent diodes.
以上のようにこの発明によれば、比較的簡単な工程で屈
曲した活性領域と高精度に一致した電流経路を、ショッ
トキーバリアによって形成できるので、良好な特性が再
現性良く得られ、さらに、ウェハ表面の突起部を無くし
、平たんな素子表面が得られるなどの効果がある。As described above, according to the present invention, a current path that matches the curved active region with high precision can be formed using a Schottky barrier in a relatively simple process, so good characteristics can be obtained with good reproducibility, and further, This has the advantage of eliminating protrusions on the wafer surface and providing a flat element surface.
第１図（ａ）〜（ｅ）はこの発明の一実施例である半導
体レーザ装置の製造工程を示す断面図、第２図（ａ ）
（ｂ ）は従来の半導体レーザ装置の断面図である。
図において、（１）はＧａＡｓ基板、（２）はＡＩ Ｇ
ａＡｓクラッド層、（３）はＧａＡｓ活性層、（４）は
人Ｉ ＧａＡｓクラッド層、（５）はＧａ人Ｓコンタク
１−層、（６）は人Ｉ ＧａＡｓ層、（７）は金属電極
、（ＩＯＢ）は活性層の屈曲部、（１１）はホトレジス
トを示す。
なお、図中、同一符号は同一、または相当部分を示す。FIGS. 1(a) to (e) are cross-sectional views showing the manufacturing process of a semiconductor laser device according to an embodiment of the present invention, and FIG. 2(a)
(b) is a sectional view of a conventional semiconductor laser device. In the figure, (1) is a GaAs substrate, (2) is an AI G
aAs cladding layer, (3) is GaAs active layer, (4) is GaAs cladding layer, (5) is GaAs contact layer, (6) is GaAs layer, (7) is metal electrode, (IOB) indicates a bent portion of the active layer, and (11) indicates a photoresist. In addition, in the figures, the same reference numerals indicate the same or equivalent parts.
Claims (1)
板上に、少なくとも第１のクラッド層、活性層、第２の
クラッド層、オーミックコンタクト層が、各層の形状が
前記基板の一主面形状と略同一であるように形成された
半導体発光装置において、 前記オーミックコンタクト層の突起部の頂上部を除いた
オーミックコンタクト層に接して、ショットキーコンタ
クト層を形成し、かつ前記オーミックコンタクト層の突
起部の頂上部及び前記ショットキーコンタクト層の表面
に接した電極を形成したことを特徴とする半導体発光装
置。[Scope of Claims] At least a first cladding layer, an active layer, a second cladding layer, and an ohmic contact layer are formed on a semiconductor substrate having stripe-shaped protrusions formed on one principal surface, each layer having the shape described above. In a semiconductor light emitting device formed to have substantially the same shape as one principal surface of the substrate, a Schottky contact layer is formed in contact with the ohmic contact layer excluding the top portion of the protrusion of the ohmic contact layer, and A semiconductor light emitting device characterized in that an electrode is formed in contact with the top of the protrusion of the ohmic contact layer and the surface of the Schottky contact layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2324237A JPH04192486A (en) | 1990-11-26 | 1990-11-26 | Semiconductor light-emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2324237A JPH04192486A (en) | 1990-11-26 | 1990-11-26 | Semiconductor light-emitting device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04192486A true JPH04192486A (en) | 1992-07-10 |
Family
ID=18163572
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2324237A Pending JPH04192486A (en) | 1990-11-26 | 1990-11-26 | Semiconductor light-emitting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04192486A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006156639A (en) * | 2004-11-29 | 2006-06-15 | Sharp Corp | Semiconductor laser element, optical disc apparatus, and light transmission system |
-
1990
- 1990-11-26 JP JP2324237A patent/JPH04192486A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006156639A (en) * | 2004-11-29 | 2006-06-15 | Sharp Corp | Semiconductor laser element, optical disc apparatus, and light transmission system |
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