JPH04192484A - Manufacture of semiconductor laser device - Google Patents

Abstract

PURPOSE:To easily form a blocking layer by a method wherein a glass whose melting point is low and whose resistance is high such as an As-S-based glass is used for the blocking layer. CONSTITUTION:A glass whose melting point is low (600 deg.C or lower) and whose resistance is high (10<8>OMEGA.cm or higher) is used for a blocking layer 6a which is used to concentrate an electric current in a definite part. When a potential difference is applied across a p-electrode and an n-electrode 7, 8, electrons are injected from a lower clad layer (n-AlGaAs) 2 and holes are injected into an active layer 3 from an upper clad layer (p-AlGaAs) 4; they are recombined; light is emitted. The electric current is blocked in this part; it is concentrated near a part, other than the part which actually emits light; the light is emitted with high efficiency. Thereby, the blocking layer 6a is formed when it is immersed in an As-S-based glass melt after an etching operation; the blocking layer in other parts is etched selectively and removed by an alkaline aqueous solution; after that, electrodes are formed. A laser is obtained.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to the structure and manufacturing method of a semiconductor laser.

[Conventional technology]

7 to 12 show an example of a conventional manufacturing method for a semiconductor laser device called a buried ridge type. In the figure, (1) is the substrate, (2) is the lower cladding layer, (3) is the active layer, (4) is the upper cladding layer, (is the contact layer (5), (sb) is the block layer, (7) ) indicates an electrode.

Next, the operation will be explained. p, n1! Pole (7), (3
), the lower cladding layer (n-AIGa
As) (2), electrons are transferred to the upper cladding layer (p-A l
Holes are injected from GaAs ) (4) into the active layer (3) and recombined to emit light.

At this time, the current is blocked by the current blocking layer (6a) (As-5 glass) in this portion, and the current flows concentrated near the other portion that actually emits light, emitting light efficiently.

[Problem to be solved by the invention]

Since the conventional manufacturing method of a semiconductor laser device has the structure as described above, when forming the block layer (6-b), it is necessary to perform selective epitaxial growth using a vapor phase method. In order to perform epitaxial crystal growth, it is necessary to sufficiently control each condition of the crystal growth apparatus, and there are problems such as the need for an expensive apparatus.

This invention was made to solve the above problems, and when forming a block layer, for example, As-5
The object of the present invention is to obtain a semiconductor laser device that can use a glass having a low melting point and high resistance, such as a glass based on glass.

[Means to solve the problem]

In the method for manufacturing a semiconductor laser device according to the present invention, the block layer is made of n-GaAs made by an epitaxial growth method.
Instead, for example, a low melting point, high resistance glass such as As-3 glass is used.

[Effect]

In the method for manufacturing a semiconductor laser device in this invention, since the As-5 glass used for the block layer has high resistance,
There is no need to epitaxially form the pn reverse bias layer (it can be applied to As-5 glass melt, taken out and solidified).

〔Example〕

An embodiment of the present invention will be described below.

1 to 6 are process diagrams showing a method of manufacturing a semiconductor laser device according to an embodiment of the present invention.

In Figure 1, (1) l! Substrate (n-GaAs),
(2nd line is down 57)' layer (n-AIGaAs), (
3) (active layer (AIGaAs), (4) (upper cladding layer (p-AlGaAs), (5) LC layer)'
) G layer (p-GaAs), (6-a) +; l block layer (As-8 glass), (7) is p-electrode, (8)
is the n-electrode.

Next, the operation will be explained.

When a potential difference is applied between the p, nli poles (n, (s),
Electrons are injected from the lower cladding layer (n-AlGaAs) (2) and holes from the upper cladding layer (p-AIGaAs) (4) are injected into the active layer (3) and recombine to emit light. At this time, electrophoresis is blocked in this part of the electrophoresis blocking layer (6a) (As-5 glass), and current flows concentrated near the other parts that actually emit light, emitting light efficiently.

Next, the manufacturing process will be explained. In the conventional example, a nitride film is partially formed as shown in FIG. 2, and after the edge is etched as shown in FIG.
- A GaAs block layer was grown epitaxially.

After that, electrodes were formed to create a laser.

In the present invention, after etching, a block layer is formed by simply immersing it in an As-3 glass melt, and the remaining block layer is removed by selective etching with an alkaline aqueous solution, after which electrodes are formed and used as a laser.

〔Effect of the invention〕

Since the block layer was changed from the conventional n-GaAs epitaxial layer to As-5 glass in this way, the formation of the block layer became easier.

[Brief explanation of the drawing]

1 to 6 are process sectional views showing a manufacturing method according to an embodiment of the present invention, and FIGS. 7 to 12 are process sectional views showing a conventional manufacturing method. (11it substrate (n-GaAs), (2) 12 lower cladding layer (n-AIGaAs), (3) C active layer (n-
GaAs), (4)+! Upper cladding layer p-AIGa
As), (May contact layer (p-GaAs), (
6J-(a) i, t block layer (As-5 glass)
, (7) is p! The pole (8) is an n-electrode. In addition, in each figure, the same symbol i+ indicates the same or equivalent part.

Claims (1)

[Claims] As a block layer to concentrate the current to a specific part, we use a low melting point (below 600℃), high resistance (10^8Ω・
1. A method for manufacturing a semiconductor laser device, characterized in that a glass having a diameter of 1 cm or more is used.