JPH0418762A - Insulated gate field-effect transistor - Google Patents

Insulated gate field-effect transistor

Info

Publication number
JPH0418762A
JPH0418762A JP2121326A JP12132690A JPH0418762A JP H0418762 A JPH0418762 A JP H0418762A JP 2121326 A JP2121326 A JP 2121326A JP 12132690 A JP12132690 A JP 12132690A JP H0418762 A JPH0418762 A JP H0418762A
Authority
JP
Japan
Prior art keywords
drain layer
gate
drain
formed
prevented
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2121326A
Inventor
Yuzuru Fujita
Mineo Katsueda
Takeaki Okabe
Shigeo Otaka
Ichiro Takei
Isao Yoshida
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2121326A priority Critical patent/JPH0418762A/en
Publication of JPH0418762A publication Critical patent/JPH0418762A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H01L29/7835Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025Channel region of field-effect devices
    • H01L29/1029Channel region of field-effect devices of field-effect transistors
    • H01L29/1033Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
    • H01L29/1041Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface
    • H01L29/1045Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface the doping structure being parallel to the channel length, e.g. DMOS like
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843Source or drain regions of field-effect devices
    • H01L29/0847Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107Substrate region of field-effect devices
    • H01L29/1075Substrate region of field-effect devices of field-effect transistors
    • H01L29/1079Substrate region of field-effect devices of field-effect transistors with insulated gate
    • H01L29/1083Substrate region of field-effect devices of field-effect transistors with insulated gate with an inactive supplementary region, e.g. for preventing punch-through, improving capacity effect or leakage current
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725Source or drain electrodes for field effect devices
    • H01L29/41766Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor

Abstract

PURPOSE: To enable a field-effect transistor of this design to be possessed of a short channel and a high drain breakdown strength without providing a short gate by a method wherein a second low concentration drain layer other than a first low concentration drain layer is formed, the impurity concentration of the second drain layer is lower than that of the first drain layer, and impurities are prevented from diffusing in a lateral direction under a gate.
CONSTITUTION: A drain layer 4 is set lower than a drain layer 3 in impurity concentration, and a deep diffusion layer is formed in a region which contains a part of the first low concentration drain layer 3 using a gate as a mask. In result, impurities are prevented from diffusing in a lateral direction, whereby a short channel is formed under a gate 1. As the overlap of the second drain layer 4 with the gate 1 becomes small in electrostatic capacitance, the diffused electrostatic capacitance Cgd between a gate and a drain can be prevented from increasing even if the overlap concerned is formed large.
COPYRIGHT: (C)1992,JPO&Japio
JP2121326A 1990-05-14 1990-05-14 Insulated gate field-effect transistor Pending JPH0418762A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2121326A JPH0418762A (en) 1990-05-14 1990-05-14 Insulated gate field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2121326A JPH0418762A (en) 1990-05-14 1990-05-14 Insulated gate field-effect transistor

Publications (1)

Publication Number Publication Date
JPH0418762A true JPH0418762A (en) 1992-01-22

Family

ID=14808484

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2121326A Pending JPH0418762A (en) 1990-05-14 1990-05-14 Insulated gate field-effect transistor

Country Status (1)

Country Link
JP (1) JPH0418762A (en)

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5386134A (en) * 1993-11-23 1995-01-31 Vlsi Technology, Inc. Asymmetric electro-static discharge transistors for increased electro-static discharge hardness
JPH07335834A (en) * 1994-06-07 1995-12-22 Nippon Motorola Ltd Output driver of semiconductor integrated circuit device
US5661312A (en) * 1995-03-30 1997-08-26 Motorola Silicon carbide MOSFET
US5759897A (en) * 1996-09-03 1998-06-02 Advanced Micro Devices, Inc. Method of making an asymmetrical transistor with lightly and heavily doped drain regions and ultra-heavily doped source region
US5789787A (en) * 1996-09-03 1998-08-04 Advanced Micro Devices, Inc. Asymmetrical N-channel and P-channel devices
US5831306A (en) * 1996-09-03 1998-11-03 Advanced Micro Devices, Inc. Asymmetrical transistor with lightly doped drain region, heavily doped source and drain regions, and ultra-heavily doped source region
US5904529A (en) * 1997-08-25 1999-05-18 Advanced Micro Devices, Inc. Method of making an asymmetrical IGFET and providing a field dielectric between active regions of a semiconductor substrate
US5923982A (en) * 1997-04-21 1999-07-13 Advanced Micro Devices, Inc. Method of making asymmetrical transistor with lightly and heavily doped drain regions and ultra-heavily doped source region using two source/drain implant steps
US6051471A (en) * 1996-09-03 2000-04-18 Advanced Micro Devices, Inc. Method for making asymmetrical N-channel and symmetrical P-channel devices
WO2000045437A1 (en) * 1999-01-26 2000-08-03 Hitachi, Ltd. Method of setting back bias of mos circuit, and mos integrated circuit
JP2002504267A (en) * 1997-06-10 2002-02-05 スペクトリアン Lateral diffusion MOS transistor with trench source contact
US6552389B2 (en) 2000-12-14 2003-04-22 Kabushiki Kaisha Toshiba Offset-gate-type semiconductor device
US6864533B2 (en) 2000-09-11 2005-03-08 Kabushiki Kaisha Toshiba MOS field effect transistor with reduced on-resistance
JP2006005204A (en) * 2004-06-18 2006-01-05 Fujitsu Ltd Semiconductor device and method for manufacturing the same
CN100391007C (en) * 2003-10-09 2008-05-28 三洋电机株式会社 Semiconductor device and method for making same
JP2008140817A (en) * 2006-11-30 2008-06-19 Toshiba Corp Semiconductor device
JP2008198851A (en) * 2007-02-14 2008-08-28 Fuji Electric Device Technology Co Ltd Semiconductor device
JP2009170747A (en) * 2008-01-18 2009-07-30 Toshiba Corp Semiconductor device and method for manufacturing the same
WO2009101150A1 (en) * 2008-02-15 2009-08-20 X-Fab Semiconductor Foundries Ag Transistor
WO2014054375A1 (en) * 2012-10-02 2014-04-10 シャープ株式会社 Field-effect transistor and method for manufacturing same
WO2018150467A1 (en) * 2017-02-14 2018-08-23 日産自動車株式会社 Semiconductor device and semiconductor device production method

Cited By (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5386134A (en) * 1993-11-23 1995-01-31 Vlsi Technology, Inc. Asymmetric electro-static discharge transistors for increased electro-static discharge hardness
JPH07335834A (en) * 1994-06-07 1995-12-22 Nippon Motorola Ltd Output driver of semiconductor integrated circuit device
US5661312A (en) * 1995-03-30 1997-08-26 Motorola Silicon carbide MOSFET
US6078080A (en) * 1996-09-03 2000-06-20 Advanced Micro Devices, Inc. Asymmetrical transistor with lightly and heavily doped drain regions and ultra-heavily doped source region
US5759897A (en) * 1996-09-03 1998-06-02 Advanced Micro Devices, Inc. Method of making an asymmetrical transistor with lightly and heavily doped drain regions and ultra-heavily doped source region
US5789787A (en) * 1996-09-03 1998-08-04 Advanced Micro Devices, Inc. Asymmetrical N-channel and P-channel devices
US5831306A (en) * 1996-09-03 1998-11-03 Advanced Micro Devices, Inc. Asymmetrical transistor with lightly doped drain region, heavily doped source and drain regions, and ultra-heavily doped source region
US6504218B1 (en) 1996-09-03 2003-01-07 Advanced Micro Devices, Inc. Asymmetrical N-channel and P-channel devices
US6051471A (en) * 1996-09-03 2000-04-18 Advanced Micro Devices, Inc. Method for making asymmetrical N-channel and symmetrical P-channel devices
US5923982A (en) * 1997-04-21 1999-07-13 Advanced Micro Devices, Inc. Method of making asymmetrical transistor with lightly and heavily doped drain regions and ultra-heavily doped source region using two source/drain implant steps
JP2002504267A (en) * 1997-06-10 2002-02-05 スペクトリアン Lateral diffusion MOS transistor with trench source contact
JP4778127B2 (en) * 1997-06-10 2011-09-21 ロベック アクイジションズ リミテッド エルエルシー Lateral diffusion MOS transistor with trench source contact
US5904529A (en) * 1997-08-25 1999-05-18 Advanced Micro Devices, Inc. Method of making an asymmetrical IGFET and providing a field dielectric between active regions of a semiconductor substrate
WO2000045437A1 (en) * 1999-01-26 2000-08-03 Hitachi, Ltd. Method of setting back bias of mos circuit, and mos integrated circuit
US7002397B2 (en) 1999-01-26 2006-02-21 Renesas Technology Corp. Method of setting back bias of MOS circuit, and MOS integrated circuit
US6864533B2 (en) 2000-09-11 2005-03-08 Kabushiki Kaisha Toshiba MOS field effect transistor with reduced on-resistance
US7026214B2 (en) 2000-12-14 2006-04-11 Kabushiki Kaisha Toshiba Offset-gate-type semiconductor device
US7061060B2 (en) 2000-12-14 2006-06-13 Kabushiki Kaisha Toshiba Offset-gate-type semiconductor device
US6552389B2 (en) 2000-12-14 2003-04-22 Kabushiki Kaisha Toshiba Offset-gate-type semiconductor device
CN100391007C (en) * 2003-10-09 2008-05-28 三洋电机株式会社 Semiconductor device and method for making same
JP2006005204A (en) * 2004-06-18 2006-01-05 Fujitsu Ltd Semiconductor device and method for manufacturing the same
JP2008140817A (en) * 2006-11-30 2008-06-19 Toshiba Corp Semiconductor device
JP2008198851A (en) * 2007-02-14 2008-08-28 Fuji Electric Device Technology Co Ltd Semiconductor device
JP2009170747A (en) * 2008-01-18 2009-07-30 Toshiba Corp Semiconductor device and method for manufacturing the same
WO2009101150A1 (en) * 2008-02-15 2009-08-20 X-Fab Semiconductor Foundries Ag Transistor
US9748383B2 (en) 2008-02-15 2017-08-29 X-Fab Semiconductor Foundries Ag Transistor
WO2014054375A1 (en) * 2012-10-02 2014-04-10 シャープ株式会社 Field-effect transistor and method for manufacturing same
WO2018150467A1 (en) * 2017-02-14 2018-08-23 日産自動車株式会社 Semiconductor device and semiconductor device production method

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