JPH04186761A - High dielectric memory - Google Patents
High dielectric memoryInfo
- Publication number
- JPH04186761A JPH04186761A JP2315455A JP31545590A JPH04186761A JP H04186761 A JPH04186761 A JP H04186761A JP 2315455 A JP2315455 A JP 2315455A JP 31545590 A JP31545590 A JP 31545590A JP H04186761 A JPH04186761 A JP H04186761A
- Authority
- JP
- Japan
- Prior art keywords
- amorphous
- high dielectric
- film
- permittivity
- storage device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims abstract description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- WOIHABYNKOEWFG-UHFFFAOYSA-N [Sr].[Ba] Chemical compound [Sr].[Ba] WOIHABYNKOEWFG-UHFFFAOYSA-N 0.000 claims description 2
- 229910002115 bismuth titanate Inorganic materials 0.000 claims description 2
- XKENYNILAAWPFQ-UHFFFAOYSA-N dioxido(oxo)germane;lead(2+) Chemical compound [Pb+2].[O-][Ge]([O-])=O XKENYNILAAWPFQ-UHFFFAOYSA-N 0.000 claims description 2
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 claims description 2
- 229910052746 lanthanum Inorganic materials 0.000 claims description 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 2
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 claims description 2
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 claims description 2
- 229910002113 barium titanate Inorganic materials 0.000 claims 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims 1
- 229910052451 lead zirconate titanate Inorganic materials 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 4
- 230000015556 catabolic process Effects 0.000 abstract description 3
- 239000000919 ceramic Substances 0.000 abstract description 3
- 239000011521 glass Substances 0.000 abstract description 3
- 229910002112 ferroelectric ceramic material Inorganic materials 0.000 abstract description 2
- 230000010354 integration Effects 0.000 abstract description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 abstract description 2
- 238000004544 sputter deposition Methods 0.000 abstract description 2
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 239000003990 capacitor Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は動的半導体記憶装置（ダイナミックＲＡ Ｍ
）に用いられる電気容量記憶部（キャバシ夕）の誘電体
膜材料構成に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a dynamic semiconductor memory device (dynamic RAM).
) The present invention relates to a dielectric film material structure of a capacitance storage unit (cabacitor) used in a capacitor.
［従来の技術］
従来、動的半導体記憶装置の電気容量記憶部にもちいら
れる誘電体膜材料としては、酸化シリコン膜（誘電率
３．９）、窒化シリコン膜（誘電率 １２）、酸化タン
タル膜（誘電率 ２０〜４０）、酸化チタン膜（誘電率
〜９０）あるいはこれらの積層膜か混合膜等が用いら
れていた。[Prior Art] Conventionally, silicon oxide film (low dielectric constant
3.9), a silicon nitride film (dielectric constant: 12), a tantalum oxide film (dielectric constant: 20-40), a titanium oxide film (dielectric constant: ~90), or a laminated film or mixed film of these films.
［発明が解決しようとする課題］
しかし上記従来技術によると、誘電体膜の誘電率が１０
０以下と小さい為に電気容量記憶部の蓄積電荷量が少な
く成り、記憶作用が少なく成ると言う課題があった。[Problems to be Solved by the Invention] However, according to the above-mentioned prior art, the dielectric constant of the dielectric film is 10.
Since the capacitance is small (0 or less), the amount of charge stored in the capacitance storage section becomes small, and there is a problem that the storage function is reduced.
本発明は、かかる従来技術の課題を解決する為に新しい
誘電体膜材料を提供する事を目的とする。The present invention aims to provide a new dielectric film material to solve the problems of the prior art.
［課題を解決する為の手段］
上記課題を解決する為に、本発明は高誘電体記憶装置に
関し、動的半導体記憶装置の電気容量記憶部に２つの電
極に挟まれた誘電率１００以上のアモルファス高誘電体
膜を形成する手段を取る事を基本とする。[Means for Solving the Problems] In order to solve the above problems, the present invention relates to a high dielectric storage device, and relates to a high dielectric storage device having a dielectric constant of 100 or more and sandwiched between two electrodes in a capacitance storage portion of a dynamic semiconductor storage device. The basic method is to form an amorphous high dielectric film.
［実施例］ 以下、実施例により本発明を詳述する。[Example] Hereinafter, the present invention will be explained in detail with reference to Examples.
いま、動的半導体記憶装置の電気容量記憶部を２つの電
極に上下または左右から挟まれた形にてジルコニウム酸
チタン酸船（ＰＺＴ）膜を低温（常温〜５００度以下）
にてＭＯＣＶＤ法、スパッタ法或は塗布ガラス（スピン
オン ガラス或は５ＯＧ）法にて形成するとアモルフ
ァスＰＺＴ膜を形成する事が出来、該アモルファスＰＺ
Ｔ膜の誘電率は５８０程度と成り、結晶化ＰＺＴ膜（セ
ラミックＰＺＴ膜）の誘電率２００〜４５０と同等かそ
れ以上の誘電率が得られると共に、該アモルファスＰＺ
Ｔ膜の絶縁耐圧は同一誘電率でも高く成りリーク電流も
小さく成り、その分膜厚も小さく出来、−層の高電気容
量化を計る事が出来る。Now, a zirconate titanate (PZT) film is deposited at a low temperature (room temperature to below 500 degrees Celsius) with the capacitance storage part of a dynamic semiconductor memory device sandwiched between two electrodes from above and below or from left and right.
An amorphous PZT film can be formed by using the MOCVD method, sputtering method, or coated glass (spin-on glass or 5OG) method, and the amorphous PZ
The dielectric constant of the T film is about 580, which is equivalent to or higher than the dielectric constant of crystallized PZT film (ceramic PZT film) of 200 to 450, and the amorphous PZ
The dielectric breakdown voltage of the T film is high even with the same dielectric constant, and the leakage current is also small, and the film thickness can be reduced accordingly, making it possible to increase the capacitance of the - layer.
上記実施例に示した如く、通常強誘電体セラミック材料
と言われている材料をアモルファス膜化して用いる事に
より、強誘電体セラミックと同程度の高誘電率が得られ
ると共に、絶縁耐圧の向上及びリーク電流の減少に伴う
一層の薄膜化と高電気容量化も計る事が出来る。As shown in the above example, by using a material that is usually called a ferroelectric ceramic material in the form of an amorphous film, it is possible to obtain a high dielectric constant comparable to that of ferroelectric ceramics, as well as to improve dielectric strength and With the reduction in leakage current, it is also possible to make the film thinner and increase the capacitance.
ちなみに、アモルファス高誘電体膜の誘電率は以下の如
くである。Incidentally, the dielectric constant of the amorphous high dielectric film is as follows.
チタン酸パリュウム： １０００〜１００００ジルコニ
ユウム酸チタン酸鉛：２００〜２００チタン酸鉛： １
００〜３００
ニオブ酸鉛：２００〜４００
チタン酸ストロンチュウム： ３００〜５００ニオブ酸
ストロンチユウムバリユウム＝３００〜５００
尚、以上のアモルファス高誘電体膜の他、誘電率が１０
０以上のアモルファス高誘電体膜としてゲルマニュウム
酸鉛、チタン酸ビスマス及びジルコニュウム酸チタン酸
ランタン鉛等を用いる事も出来る。Pallium titanate: 1000-10000 Lead zirconium titanate: 200-200 Lead titanate: 1
00 to 300 Lead niobate: 200 to 400 Strontium titanate: 300 to 500 Strontium barium niobate = 300 to 500 In addition to the above amorphous high dielectric constant films, films with a dielectric constant of 10
Lead germanate, bismuth titanate, lead lanthanum titanate zirconate, etc. can also be used as the amorphous high dielectric film having a dielectric constant of 0 or more.
［発明の効果］
本発明により動的半導体記憶装置の電気容量記憶部のが
面積化に伴う大集積化を計る事が出来る効果が有ると共
に、本技術をコンデンサに適用する事により、小型コン
デンサが実現出来る効果も有る。[Effects of the Invention] The present invention has the effect that it is possible to achieve large scale integration as the area of the capacitance storage section of a dynamic semiconductor memory device increases, and by applying this technology to capacitors, small capacitors can be made. There are some effects that can be achieved.
以 上 出願人 セイコーニブノン株式会宇土that's all Applicant: Seiko Nibunon Co., Ltd. Uto
Claims (1)
電極間に挟まれた誘電率が１００以上のアモルファス高
誘電体膜が形成されて成る事を特徴とする高誘電体記憶
装置。 （２）アモルファス高誘電体膜をアモルファスチタン酸
バリュウムと成す事を特徴とする第１項記載の高誘電体
記憶装置。 （３）アモルファス高誘電体膜をアモルファスジルコニ
ウム酸チタン酸鉛と成す事を特徴とする第１項記載の高
誘電体記憶装置。 （４）アモルファス高誘電体膜をアモルファスチタン酸
鉛と成す事を特徴とする第１項記載の高誘電体記憶装置
。 （５）アモルファス高誘電体膜をアモルファスニオブ酸
鉛と成す事を特徴とする高誘電体記憶装置。 （６）アモルファス高誘電体膜をアモルファスチタン酸
ストロンチュウムと成す事を特徴とする第１項記載の高
誘電体記憶装置。 （７）アモルファス高誘電体膜をアモルファスニオブ酸
ストロンチュウムバリュウムと成す事を特徴とする第１
項記載の高誘電体記憶装置。（８）アモルファス高誘電
体膜をアモルファスゲルマニュウム酸鉛と成す事を特徴
とする第１項記載の高誘電体記憶装置。 （９）アモルファス高誘電体膜をアモルファスチタン酸
ビスマスと成す事を特徴とする第１項記載の高誘電体記
憶装置。 （１０）アモルファス高誘電体膜をアモルファスジルコ
ニュウム酸チタン酸ランタン鉛と成す事を特徴とする第
１項記載の高誘電体記憶装置。[Claims] (1) The capacitance storage portion of the dynamic semiconductor memory device is characterized in that an amorphous high dielectric film having a dielectric constant of 100 or more is formed between two electrodes. High dielectric storage device. (2) The high dielectric storage device according to item 1, wherein the amorphous high dielectric film is made of amorphous barium titanate. (3) The high dielectric storage device according to item 1, wherein the amorphous high dielectric film is made of amorphous lead zirconate titanate. (4) The high dielectric storage device according to item 1, wherein the amorphous high dielectric film is made of amorphous lead titanate. (5) A high dielectric storage device characterized in that the amorphous high dielectric film is made of amorphous lead niobate. (6) The high dielectric storage device according to item 1, wherein the amorphous high dielectric film is made of amorphous strontium titanate. (7) A first method characterized in that the amorphous high dielectric constant film is made of amorphous strontium barium niobate.
The high dielectric storage device described in . (8) The high dielectric storage device according to item 1, wherein the amorphous high dielectric film is made of amorphous lead germanate. (9) The high dielectric storage device according to item 1, wherein the amorphous high dielectric film is made of amorphous bismuth titanate. (10) The high dielectric storage device according to item 1, wherein the amorphous high dielectric film is made of amorphous lead lanthanum zirconate titanate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2315455A JPH04186761A (en) | 1990-11-20 | 1990-11-20 | High dielectric memory |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2315455A JPH04186761A (en) | 1990-11-20 | 1990-11-20 | High dielectric memory |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04186761A true JPH04186761A (en) | 1992-07-03 |
Family
ID=18065572
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2315455A Pending JPH04186761A (en) | 1990-11-20 | 1990-11-20 | High dielectric memory |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04186761A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20010014838A (en) * | 1999-04-27 | 2001-02-26 | 포만 제프리 엘 | Amorphous dielectric capacitors on silicon |
-
1990
- 1990-11-20 JP JP2315455A patent/JPH04186761A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20010014838A (en) * | 1999-04-27 | 2001-02-26 | 포만 제프리 엘 | Amorphous dielectric capacitors on silicon |
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