JPH04186626A - Etching apparatus - Google Patents

Etching apparatus

Info

Publication number
JPH04186626A
JPH04186626A JP31185690A JP31185690A JPH04186626A JP H04186626 A JPH04186626 A JP H04186626A JP 31185690 A JP31185690 A JP 31185690A JP 31185690 A JP31185690 A JP 31185690A JP H04186626 A JPH04186626 A JP H04186626A
Authority
JP
Japan
Prior art keywords
wafer
cam
shaft
rotating shaft
attached
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP31185690A
Other languages
Japanese (ja)
Inventor
Yoshitaka Harada
原田 義隆
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Yamaguchi Ltd
Original Assignee
NEC Yamaguchi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Yamaguchi Ltd filed Critical NEC Yamaguchi Ltd
Priority to JP31185690A priority Critical patent/JPH04186626A/en
Publication of JPH04186626A publication Critical patent/JPH04186626A/en
Pending legal-status Critical Current

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  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

PURPOSE:To eliminate etching residue by always varying a contact surface of a wafer with a member for holding the wafer during processing, and to prevent generation of particles in a later step and diffusion of impurities into a semiconductor substrate by exposing the entire surface of a wafer with a spray nozzle upon rotation of a rotary shaft and a cam rotary shaft, and always holding the wafer by three chucking pawls. CONSTITUTION:In this etching apparatus, a wafer 21 is held by three chucking pawls. Then, a motor 12 is rotated to rotate a rotary shaft 1 and a cam rotary shaft 2. The position of a bracket 8 of the shaft 1 is varied to a cam 4 so that the pawls 3 are separated from the side of the wafer 21. A push rod 5 is moved in a central direction by the contour of a cam plate, the pawls 3 mounted on the other end are moved forward to push the wafer. As the shaft 1 rotates in this manner, the three pawls 3, always alternately hold the wafer 21. As a result, the wafer 21 is not disturbed in its visual field for spraying, and the wafer 21 can be entirely coated with processing solution uniformly.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体基板であるウェーハの薄膜をエツチング
するエツチング装置に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an etching apparatus for etching a thin film of a wafer, which is a semiconductor substrate.

〔従来の技術〕[Conventional technology]

第3図は従来のエツチング装置の一例を示す斜視図であ
る。従来、このエツチング装置は、同図に示すように、
ウェーハ22をその裏面と側面を保持するチャック1つ
と、このチャック19に保持されたウェーハ21を回転
させる回転機構と、ウェーハ21の表面と裏面とから処
理液を吹き付ける表面スプレーノズル20及び裏面スプ
レーノズル20aとを有していた。
FIG. 3 is a perspective view showing an example of a conventional etching apparatus. Conventionally, this etching apparatus, as shown in the same figure,
One chuck that holds the back and side surfaces of the wafer 22, a rotation mechanism that rotates the wafer 21 held by this chuck 19, and a front spray nozzle 20 and a back spray nozzle that spray processing liquid from the front and back surfaces of the wafer 21. 20a.

このエツチング装置で、ウェーハの薄膜をエツチングす
る場合は、まず、薄膜が形成されたウェーハ19をチャ
ック22で保持し、ウェーハ19を回転させるから、薄
膜面上に表面スプレーノズル20と裏面スプレーノズル
21で処理液を吹き付はエツチングを行っていた。
When etching a thin film on a wafer using this etching apparatus, first the wafer 19 on which the thin film has been formed is held by the chuck 22, and the wafer 19 is rotated, so that the front spray nozzle 20 and the back spray nozzle 21 are placed on the thin film surface. Etching was carried out by spraying a processing solution.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

上述した従来のエツチング装置の場合、次の問題が生じ
る。
In the case of the conventional etching apparatus described above, the following problem occurs.

ウェーハ表裏面からのスプレーにより、薄膜をエツチン
グしようとする場合、ウェーハとチャックとの接触面に
処理液が侵入できないために、こI の部分にエツチン
グ残りが生じる。このエツチング残りは、後工程におい
て湿式処理、熱処理を行なう際に、剥れるためパーティ
クルとなり、半導体デバイスの歩留りを低下させる原因
となっていた。特に半導体基板上の薄膜に不純物導入が
行なわれている場合、後工程での熱処理により不純物が
ウェーハ面内に拡散し、半導体デバイスの電気的特性を
変化させるという欠点がある。
When attempting to etch a thin film by spraying from both the front and back surfaces of the wafer, etching remains are left in this area because the processing liquid cannot enter the contact surface between the wafer and the chuck. This etching residue peels off during wet processing and heat treatment in subsequent steps and becomes particles, causing a reduction in the yield of semiconductor devices. In particular, when impurities are introduced into a thin film on a semiconductor substrate, there is a drawback that the impurities diffuse into the wafer surface due to heat treatment in a post-process, changing the electrical characteristics of the semiconductor device.

本発明の目的はかかる問題を解決するエツチング装置を
提供することにある。
An object of the present invention is to provide an etching apparatus that solves this problem.

〔課題を解決するための手段〕[Means to solve the problem]

1、本発明の第1のエツチング装置は、ウェーハの表裏
面側に配置するとともにウェーハの表裏面に処理液を吹
き付けるスプレーノズルと、一端に中心より外方に伸び
る6等分されたブラケットが取付けられるとともに所定
の回転数で回転する回転軸と、この回転軸と同軸である
とともに前記回転軸の回転数と異なる回転数で回転し、
その先端にカムが取り付けられるカム回転軸と、前記ブ
ラケット上を回転半径方向に摺動するとともにその先端
が前記カムの外側面と接触するプッシュロッドと、この
プッシュロッドの他端に取付けられるとともに前記ウェ
ーハの外側面に接触したり、離間したりするチャック爪
とを備え、前記回転軸と前記カム回転軸の回転に伴い、
前記ウェーハ全面を前記スプレーノズルに対して露呈し
、常に3個の前記チャック爪で前記ウェーハを保持する
ことを特徴としている。
1. The first etching apparatus of the present invention has a spray nozzle placed on the front and back sides of the wafer and spraying a processing liquid onto the front and back surfaces of the wafer, and a bracket divided into six equal parts extending outward from the center at one end. a rotating shaft that is rotated at a predetermined rotational speed while being coaxial with the rotating shaft and rotating at a rotational speed that is different from the rotational speed of the rotating shaft;
a cam rotation shaft with a cam attached to its tip; a push rod that slides on the bracket in the radial direction of rotation and whose tip comes into contact with the outer surface of the cam; and a push rod with a cam attached to the other end of the push rod; A chuck claw that contacts and separates from the outer surface of the wafer, and as the rotation shaft and the cam rotation shaft rotate,
The entire surface of the wafer is exposed to the spray nozzle, and the wafer is always held by the three chuck claws.

2、本発明の第2のエツチング装置は、相対する前記ブ
ラケットの先端に取付けられる鼓状の自転ローラ及び回
転ローラと、この回転ローラの軸の他端に取付けらるプ
ーリーと、前記回転軸を包むとともに一端に前記プーリ
ーをベルトを介して前記回転軸の回転に伴い回転させる
固定プーリーが取付けられる固定軸とを備え、前記ウェ
ーハの外側面を前J己自転ローラと前記回転ローラとで
挟み保持することを特徴としている。
2. The second etching device of the present invention comprises a drum-shaped rotating roller and a rotating roller attached to the tips of the opposing brackets, a pulley attached to the other end of the axis of the rotating roller, and a rotating shaft. A fixed shaft is provided at one end to which a fixed pulley is attached which wraps the wafer and rotates the pulley via a belt as the rotating shaft rotates, and the outer surface of the wafer is held between the front self-rotating roller and the rotating roller. It is characterized by

〔実施例〕〔Example〕

次に本発明について、図面を参照して説明する。第1図
(a)及び(b)は本発明の一実施例を示すエツチング
装置の上面図及び部分断面図である。このエツチング装
置は、第1図(a)及び(b)に示すように、中心より
6等分されて外方に伸びるブラケット8を一端に設け、
他端が1−リー11b及びベルト10bを介してモータ
12により回転される回転軸1と、この回転軸4にはめ
込まれるとともに一端にカム4を取付け、他端がプーリ
ー11a及びベルト10aを介してモータ12により回
転されるカム回転軸2と、ブラケット8の溝にはめ込ま
れ、回転半径方向に摺動し、ウェーハ21の側面を押し
付けるチャック爪3と、先端がカム4の外側面にスプリ
ング6により所定圧で接触するとともに他端がチャック
爪3に取付けられたプッシュロッド5とで構成されてい
る。また、この図面には示されていないが、ウェーハ2
1の表裏側に処理液を吹き付けるスプレーノズルが配置
されている。さらに、回転軸1とカム回転軸とは回転数
に差があり、外周では所定の速度差が生ずるようにされ
ている。
Next, the present invention will be explained with reference to the drawings. FIGS. 1(a) and 1(b) are a top view and a partial sectional view of an etching apparatus showing an embodiment of the present invention. As shown in FIGS. 1(a) and 1(b), this etching device is equipped with a bracket 8 at one end that is divided into six equal parts from the center and extends outward.
A rotating shaft 1 whose other end is rotated by a motor 12 via a pulley 11b and a belt 10b, a rotating shaft 1 that is fitted into the rotating shaft 4, and a cam 4 attached to one end, and whose other end is rotated by a motor 12 via a pulley 11a and a belt 10a. A cam rotating shaft 2 rotated by a motor 12, a chuck claw 3 that is fitted into a groove in a bracket 8, slides in the rotational radial direction and presses against the side surface of the wafer 21, and a tip is attached to the outer surface of the cam 4 by a spring 6. It is comprised of a push rod 5 that is in contact with a predetermined pressure and whose other end is attached to the chuck claw 3. Although not shown in this drawing, the wafer 2
Spray nozzles for spraying a treatment liquid on the front and back sides of 1 are arranged. Furthermore, there is a difference in rotational speed between the rotating shaft 1 and the cam rotating shaft, and a predetermined speed difference is created at the outer periphery.

次に、このエツチング装置の動作を説明する。Next, the operation of this etching apparatus will be explained.

まず、各チャック爪3をスプリング6に抗して、チャッ
ク爪3を開き、ウェーハ21を三つのチャック爪3で挟
む、このことは、残りのチャック爪3は、必ず、カム4
の輪郭でプッシュロッド5が押され、開いているからで
ある。次に、モータ12を回転し、回転軸1及びカム回
転軸2を回転させる。このことにより、互いに回転数の
差があるなめに、回転軸1のブラケット8の位置がカム
4に対して変る。この変ることにより、チャック爪3が
ウェーハ21の側面より離れていたものは、カム板の輪
郭によりプッシュロッド5が中心方向に移動し、他端に
取付けられたチャック爪3前進し、ウェーハを押し付け
る。このような、回転軸1の回転にともない、常に、三
つのチャック爪3が交互にウェーハ21を挟み固定する
ことになる。また、ウェーハ21にはオリエンテーショ
ンフラット23が形成されているが、この部分は、中心
角が60°より小さいので、チャック爪3と接触するこ
とがない。
First, each chuck jaw 3 is opened against the spring 6, and the wafer 21 is sandwiched between the three chuck jaws 3. This means that the remaining chuck jaws 3 must be attached to the cam 4.
This is because the push rod 5 is pushed and opened by the contour. Next, the motor 12 is rotated to rotate the rotating shaft 1 and the cam rotating shaft 2. As a result, the position of the bracket 8 of the rotary shaft 1 changes with respect to the cam 4 due to the difference in rotation speed. Due to this change, if the chuck jaw 3 was located away from the side of the wafer 21, the push rod 5 moves toward the center due to the contour of the cam plate, and the chuck jaw 3 attached to the other end moves forward to press the wafer. . As the rotating shaft 1 rotates, the three chuck claws 3 alternately sandwich and fix the wafer 21 at all times. Further, although an orientation flat 23 is formed on the wafer 21, this portion does not come into contact with the chuck jaws 3 because the central angle is smaller than 60°.

このような構造にすることにより、ウェーハ21はスプ
レーに対して視界を妨げるものがなくなり、ウェーハ2
3の全面に一様の処理液が塗布される。
With this structure, there is no obstacle to the wafer 21's view of the spray, and the wafer 21 is
A uniform treatment liquid is applied to the entire surface of 3.

第2図(a>及び(b)は本発明の他の実施例を示すエ
ツチング装置の上面図及び側面図である。このエツチン
グ装置は、第2図(a)及び<b>に示すように、回転
軸1aの一端側より中心を6等分した位置から外方に伸
びるブラケット8aの先端に相対して自転ローラ16と
回転ローラ15とを設け、この回転ローラ15とベルト
14を介して連結される固定のプーリー17を固定軸1
3の一端に設けたことである。それ以外は、前述の実施
例とほぼ同じである。
FIGS. 2(a) and 2(b) are a top view and a side view of an etching apparatus showing another embodiment of the present invention. , an autorotating roller 16 and a rotating roller 15 are provided facing the tip of a bracket 8a extending outward from a position dividing the center into six equal parts from one end of the rotating shaft 1a, and are connected to the rotating roller 15 via a belt 14. The fixed pulley 17 is connected to the fixed shaft 1
This is because it was installed at one end of 3. Other than that, this embodiment is almost the same as the previous embodiment.

このエツチング装置の動作は、まず、自転ローラ16を
半径方向に引張る。この自転ローラ16が取付けられて
いるブラケット8aは、図面には示していないが、二枚
の板が重さね、一方の板と回転軸側の板とはスプリング
介して取付けられているので、この引張力で間隔を拡げ
ることが出来る。この拡げられた自転ローラ16と回転
ローラ15との間にウェーハ21を挿入し、自転ローラ
16を離すと、ウェーハ21は自転ローラ1と回転ロー
ラ15とで挟み固定される。次に、モータ12aを回転
させ、プーリー11cとlldにより回転軸1aを回転
させる。このことにより回転軸11と固定軸12との相
対的な回転差により、回転ローラ15が回転し、ウェー
ハ21と回転ローラ15との接触面は刻々と変化する。
In operation of this etching device, first, the rotating roller 16 is pulled in the radial direction. Although the bracket 8a to which the rotating roller 16 is attached is not shown in the drawing, it is made up of two overlapping plates, and one plate and the plate on the rotating shaft side are attached via a spring. This tensile force can widen the gap. When the wafer 21 is inserted between the expanded rotating roller 16 and the rotating roller 15 and the rotating roller 16 is released, the wafer 21 is sandwiched and fixed between the rotating roller 1 and the rotating roller 15. Next, the motor 12a is rotated, and the rotating shaft 1a is rotated by the pulley 11c and lld. As a result, the rotation roller 15 rotates due to the relative rotation difference between the rotation shaft 11 and the fixed shaft 12, and the contact surface between the wafer 21 and the rotation roller 15 changes every moment.

また、自転ローラ16は固定軸13に接続されていない
ため自由に回転てき、ウェーハのオリエンテーションフ
ラット23が回転ローラ15の部分に移動したときの回
転中心ずれ、及びすべりを防止する機構となっている。
Further, since the rotating roller 16 is not connected to the fixed shaft 13, it can rotate freely, and this mechanism prevents the center of rotation from shifting and slipping when the wafer orientation flat 23 moves to the rotating roller 15. .

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明のエツチング装置は、処理中
にウェーハとウェーハを保持する部材との接触面を常に
変化させる手段を設けることによって、スプレーノズル
に対して露呈させることが出来、接触部分及びその近傍
にもエツチング残りを無くなり、後工程での剥れによる
パーティクルの発生、及び熱処理時の不純物の半導体基
板内への拡散を防止することができるという効果がある
As explained above, in the etching apparatus of the present invention, by providing means for constantly changing the contact surface between the wafer and the member holding the wafer during processing, it is possible to expose the contact portion and the member to the spray nozzle. There is also an effect that there is no etching residue in the vicinity, and generation of particles due to peeling in a subsequent process and diffusion of impurities into the semiconductor substrate during heat treatment can be prevented.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図(a)及び(b)は本発明の一実施例を示すエツ
チング残の上面図及び部分断面区、第2図(a)及び(
b)は本発明の他の実施例を示すエツチング装置の上面
図及び側面図、第3図は従来の一例を示すエツチング装
置の斜視図である。 1.1a・・・回転軸、2・・・カム回転軸、3・・・
タップ爪、4・・・カム、5・・・プッシュロッド、6
・・スプリング、7・・・スリーブ、8.8a・・・ブ
ラケット、9・・・溝、10a、10b、10cm・1
4・−ベルト、lla、llb、17.18=−プーリ
ー、12.12a・・・モータ、13・・・固定軸、1
5・・・回転ローラ、16・・・自転ローラ、19・・
・チャック、20・・・表面スプレーノズル、20a・
・・裏面スプレーノズル、21・・・ウェーハ、22・
・・欠番、23・・・オリエンテーションフラット。
FIGS. 1(a) and (b) are a top view and partial cross-sectional area of etching residue showing one embodiment of the present invention, and FIGS. 2(a) and (b) are
b) is a top view and a side view of an etching apparatus showing another embodiment of the present invention, and FIG. 3 is a perspective view of an etching apparatus showing a conventional example. 1.1a... Rotating shaft, 2... Cam rotating shaft, 3...
Tap claw, 4...Cam, 5...Push rod, 6
...Spring, 7...Sleeve, 8.8a...Bracket, 9...Groove, 10a, 10b, 10cm・1
4.-belt, lla, llb, 17.18=-pulley, 12.12a...motor, 13...fixed shaft, 1
5... Rotating roller, 16... Autorotating roller, 19...
・Chuck, 20...Surface spray nozzle, 20a・
...Backside spray nozzle, 21...Wafer, 22.
...missing number, 23...orientation flat.

Claims (1)

【特許請求の範囲】 1、ウェーハの表裏面側に配置するとともにウェーハの
表裏面に処理液を吹き付けるスプレーノズルと、一端に
中心より外方に伸びる6等分されたブラケットが取付け
られるとともに所定の回転数で回転する回転軸と、この
回転軸と同軸であるとともに前記回転軸の回転数と異な
る回転数で回転し、その先端にカムが取り付けられるカ
ム回転軸と、前記ブラケット上を回転半径方向に摺動す
るとともにその先端が前記カムの外側面と接触するプッ
シュロッドと、このプッシュロッドの他端に取付けられ
るとともに前記ウェーハの外側面に接触したり、離間し
たりするチャック爪とを備え、前記回転軸と前記カム回
転軸の回転に伴い、前記ウェーハ全面を前記スプレーノ
ズルに対して露呈し、常に3個の前記チャック爪で前記
ウェーハを保持することを特徴とするエッチング装置。 2、相対する前記ブラケットの先端に取付けられる鼓状
の自転ローラ及び回転ローラと、この回転ローラの軸の
他端に取付けらるプーリーと、前記回転軸を包むととも
に一端に前記プーリーをベルトを介して前記回転軸の回
転に伴い回転させる固定プーリーが取付けられる固定軸
とを備え、前記ウェーハの外側面を前記自転ローラと前
記回転ローラとで挟み保持することを特徴とする請求項
1記載のエッチング装置。
[Claims] 1. A spray nozzle is arranged on the front and back sides of the wafer and sprays a processing liquid onto the front and back surfaces of the wafer, and a bracket divided into six equal parts extending outward from the center is attached to one end, and a predetermined A rotating shaft that rotates at a rotational speed, a cam rotating shaft that is coaxial with the rotating shaft and rotates at a different rotational speed than the rotating shaft, and has a cam attached to its tip, and a cam rotating shaft that rotates on the bracket in a radial direction. a push rod that slides on the wafer and whose tip contacts the outer surface of the cam; and a chuck claw that is attached to the other end of the push rod and that contacts and separates from the outer surface of the wafer; An etching apparatus characterized in that the entire surface of the wafer is exposed to the spray nozzle as the rotation shaft and the cam rotation shaft rotate, and the wafer is always held by the three chuck claws. 2. A drum-shaped rotating roller and rotating roller attached to the tips of the opposing brackets, a pulley attached to the other end of the shaft of this rotating roller, and a belt that wraps around the rotating shaft and connects the pulley to one end. 2. The etching device according to claim 1, further comprising: a fixed shaft to which a fixed pulley is attached which rotates as the rotating shaft rotates; and the outer surface of the wafer is held between the rotating roller and the rotating roller. Device.
JP31185690A 1990-11-16 1990-11-16 Etching apparatus Pending JPH04186626A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP31185690A JPH04186626A (en) 1990-11-16 1990-11-16 Etching apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP31185690A JPH04186626A (en) 1990-11-16 1990-11-16 Etching apparatus

Publications (1)

Publication Number Publication Date
JPH04186626A true JPH04186626A (en) 1992-07-03

Family

ID=18022243

Family Applications (1)

Application Number Title Priority Date Filing Date
JP31185690A Pending JPH04186626A (en) 1990-11-16 1990-11-16 Etching apparatus

Country Status (1)

Country Link
JP (1) JPH04186626A (en)

Cited By (13)

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US6537416B1 (en) * 1999-10-01 2003-03-25 Novellus Systems, Inc. Wafer chuck for use in edge bevel removal of copper from silicon wafers
WO2003058686A3 (en) * 2002-01-09 2003-10-02 Mattson Wet Products Gmbh Device and method for the treatment of disk-shaped substrates
JP2004111902A (en) * 2002-07-26 2004-04-08 Dainippon Screen Mfg Co Ltd Method and device for treating substrate
JP2005244196A (en) * 2004-01-27 2005-09-08 Shibaura Mechatronics Corp Spin processor and spin processing method
US7018555B2 (en) 2002-07-26 2006-03-28 Dainippon Screen Mfg. Co., Ltd. Substrate treatment method and substrate treatment apparatus
US7607967B2 (en) 2005-12-20 2009-10-27 Dainippon Screen Mfg. Co., Ltd. Substrate processing method and substrate processing apparatus
US7780867B1 (en) * 1999-10-01 2010-08-24 Novellus Systems, Inc. Edge bevel removal of copper from silicon wafers
US8100081B1 (en) 2006-06-30 2012-01-24 Novellus Systems, Inc. Edge removal of films using externally generated plasma species
US8172646B2 (en) 2009-02-27 2012-05-08 Novellus Systems, Inc. Magnetically actuated chuck for edge bevel removal
US8419964B2 (en) 2008-08-27 2013-04-16 Novellus Systems, Inc. Apparatus and method for edge bevel removal of copper from silicon wafers
US9272310B2 (en) 2012-03-09 2016-03-01 Tokyo Electron Limited Liquid processing apparatus
US9412639B2 (en) 2013-12-06 2016-08-09 Tel Fsi, Inc. Method of using separate wafer contacts during wafer processing
US9732416B1 (en) 2007-04-18 2017-08-15 Novellus Systems, Inc. Wafer chuck with aerodynamic design for turbulence reduction

Cited By (19)

* Cited by examiner, † Cited by third party
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US6967174B1 (en) 1999-10-01 2005-11-22 Novellus Systems, Inc. Wafer chuck for use in edge bevel removal of copper from silicon wafers
US6537416B1 (en) * 1999-10-01 2003-03-25 Novellus Systems, Inc. Wafer chuck for use in edge bevel removal of copper from silicon wafers
US7780867B1 (en) * 1999-10-01 2010-08-24 Novellus Systems, Inc. Edge bevel removal of copper from silicon wafers
WO2003058686A3 (en) * 2002-01-09 2003-10-02 Mattson Wet Products Gmbh Device and method for the treatment of disk-shaped substrates
JP2004111902A (en) * 2002-07-26 2004-04-08 Dainippon Screen Mfg Co Ltd Method and device for treating substrate
US7018555B2 (en) 2002-07-26 2006-03-28 Dainippon Screen Mfg. Co., Ltd. Substrate treatment method and substrate treatment apparatus
US7241362B2 (en) 2002-07-26 2007-07-10 Dainippon Screen Mfg. Co., Ltd. Substrate treatment method and substrate treatment apparatus
US7413628B2 (en) 2002-07-26 2008-08-19 Dainippon Screen Mfg. Co., Ltd. Substrate treatment method and substrate treatment apparatus
JP4571515B2 (en) * 2004-01-27 2010-10-27 芝浦メカトロニクス株式会社 Spin processing equipment
JP2005244196A (en) * 2004-01-27 2005-09-08 Shibaura Mechatronics Corp Spin processor and spin processing method
US7607967B2 (en) 2005-12-20 2009-10-27 Dainippon Screen Mfg. Co., Ltd. Substrate processing method and substrate processing apparatus
US8100081B1 (en) 2006-06-30 2012-01-24 Novellus Systems, Inc. Edge removal of films using externally generated plasma species
US9732416B1 (en) 2007-04-18 2017-08-15 Novellus Systems, Inc. Wafer chuck with aerodynamic design for turbulence reduction
US10563298B1 (en) 2007-04-18 2020-02-18 Novellus Systems, Inc. Wafer chuck with aerodynamic design for turbulence reduction
US8419964B2 (en) 2008-08-27 2013-04-16 Novellus Systems, Inc. Apparatus and method for edge bevel removal of copper from silicon wafers
US9685353B2 (en) 2008-08-27 2017-06-20 Novellus Systems, Inc. Apparatus and method for edge bevel removal of copper from silicon wafers
US8172646B2 (en) 2009-02-27 2012-05-08 Novellus Systems, Inc. Magnetically actuated chuck for edge bevel removal
US9272310B2 (en) 2012-03-09 2016-03-01 Tokyo Electron Limited Liquid processing apparatus
US9412639B2 (en) 2013-12-06 2016-08-09 Tel Fsi, Inc. Method of using separate wafer contacts during wafer processing

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