JPH04180264A - Contact image sensor and manufacture thereof - Google Patents
Contact image sensor and manufacture thereofInfo
- Publication number
- JPH04180264A JPH04180264A JP2309351A JP30935190A JPH04180264A JP H04180264 A JPH04180264 A JP H04180264A JP 2309351 A JP2309351 A JP 2309351A JP 30935190 A JP30935190 A JP 30935190A JP H04180264 A JPH04180264 A JP H04180264A
- Authority
- JP
- Japan
- Prior art keywords
- interlayer insulating
- insulating layer
- hole
- electrode
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000010410 layer Substances 0.000 claims abstract description 97
- 239000011229 interlayer Substances 0.000 claims abstract description 68
- 238000000605 extraction Methods 0.000 claims abstract description 32
- 238000006243 chemical reaction Methods 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 10
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 6
- 239000011241 protective layer Substances 0.000 claims description 5
- 239000004642 Polyimide Substances 0.000 abstract description 9
- 229920001721 polyimide Polymers 0.000 abstract description 9
- 238000009413 insulation Methods 0.000 abstract description 7
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 abstract description 3
- 230000001629 suppression Effects 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 235000010724 Wisteria floribunda Nutrition 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、ファクンミリ等に用いられる密着型イメージ
センサ及びその製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a contact type image sensor used in facunmills, etc., and a method for manufacturing the same.
密着型イメージセンサには、駆動用ＩＣの数を減らすた
めに、主走査方向に並設した多数の受光素子を、複数ブ
ロックに分割して受光素子アレイを形成し、各受光素子
に発生した原稿画像の信号電荷を、スイッチング素子を
駆動して各ブロック単位毎に時系列的に読み出し、マト
リ・７クス回路を介して読み取り１０回路に出力する形
式のイメージセンサが知られている。In order to reduce the number of drive ICs in a contact image sensor, a large number of light receiving elements arranged in parallel in the main scanning direction are divided into multiple blocks to form a light receiving element array. 2. Description of the Related Art An image sensor is known in which signal charges of an image are read out in time series for each block by driving a switching element, and outputted to ten reading circuits via a matrix circuit.
この形式のイメージセンサに用いられる受光素子アレイ
のうちの一つの受光素子について、第３図（Ａ）、（Ｂ
）により説明する。Figures 3(A) and 3(B) show one light receiving element in the light receiving element array used in this type of image sensor.
).
第３図（Ａ）は受光素子の拡大平面図、（Ｂ）は同図（
Ａ）のＢ−Ｂ線で切断した面から眺めた拡大断面図で、
絶縁性基板３９に設けた下部共通電極３３には、光電変
換層３１及び透明な個別電極３２の順に積層してなるほ
ぼＴ字型の受光素子が設けられ、下部共通電極３３及び
受光素子上にポリイミドよりなる透明な層間絶縁層３４
が設けられている。そして、透明電極３２の一部の上面
の層間絶縁層３４には穴が穿たれ、この穴にアルミニュ
ーム（以下、Ａ１という）を着膜し、コンタクト・ホー
ル３５を具備する引き出し電極３６が形成され、さらに
、透明なポリイミドの保護層３７が設けられている。Figure 3 (A) is an enlarged plan view of the light receiving element, and (B) is the same figure (
This is an enlarged cross-sectional view taken from the plane taken along line B-B in A).
The lower common electrode 33 provided on the insulating substrate 39 is provided with a substantially T-shaped light receiving element formed by laminating a photoelectric conversion layer 31 and a transparent individual electrode 32 in this order. Transparent interlayer insulating layer 34 made of polyimide
is provided. Then, a hole is made in the interlayer insulating layer 34 on the upper surface of a part of the transparent electrode 32, and a film of aluminum (hereinafter referred to as A1) is deposited in this hole to form an extraction electrode 36 having a contact hole 35. Furthermore, a transparent polyimide protective layer 37 is provided.
〔発明が解決しようとする課題〕
しかるに、引き出し電極３６の外側下面部分と光電変換
層３！との間に介在する層間絶縁層３４が吸水性を有す
るポリイミドで形成されているため、高温状態で作動さ
せると、このポリイミドを介し、引き出し電極３６の下
面と光電変換層３１との間や、引き出し電極３６の下面
と共通電極３３との間の絶縁が破れ易くなる他、層間絶
縁層３４形成時の着膜不良により、光電変換層３１と引
き出し電極３６との間に形成された段差３８が規定どお
りの厚さを持たず、これにより絶縁性能がさらに低下す
るという要因が重なり、点線で示すようにリーク電流が
流れ、暗状態時の暗電流が増大するという問題があり、
これがイメージセンサの温度特性を低下させる一要因と
なっていた。[Problem to be Solved by the Invention] However, the outer lower surface portion of the extraction electrode 36 and the photoelectric conversion layer 3! Since the interlayer insulating layer 34 interposed between the two is made of water-absorbing polyimide, when operated at high temperatures, the interlayer insulating layer 34 interposed between the bottom surface of the extraction electrode 36 and the photoelectric conversion layer 31, In addition to easily breaking the insulation between the lower surface of the extraction electrode 36 and the common electrode 33, the step 38 formed between the photoelectric conversion layer 31 and the extraction electrode 36 due to poor film deposition during formation of the interlayer insulating layer 34 The problem is that the thickness is not as specified, which further deteriorates the insulation performance, and as a result, leakage current flows as shown by the dotted line, increasing the dark current in the dark state.
This was one of the factors that reduced the temperature characteristics of the image sensor.
本発明は、上記した問題に鑑みてなされたもので、その
目的とするこ止ろは、高温状態時の暗電流の増加を大幅
に抑制し、もって、温度特性を向上せしめた密着型イメ
ージセンサを提供するにある。The present invention has been made in view of the above-mentioned problems.The purpose of the present invention is to provide a close-contact image sensor that significantly suppresses the increase in dark current during high-temperature conditions, thereby improving temperature characteristics. is to provide.
また、本発明の目的は、層間絶縁層を複層着膜するとい
う工程を採用することにより、高温動作時のリーク電流
の発生を大幅に抑制し、もって温度特性を良好にすると
ともに、製造の際に、引き出し電極の面に切れが発生す
るの防止することが出来る密着型イメージセンサの製造
方法を提供するにある。Another object of the present invention is to significantly suppress the occurrence of leakage current during high-temperature operation by adopting a process of depositing multiple interlayer insulating layers, thereby improving the temperature characteristics and improving manufacturing efficiency. It is an object of the present invention to provide a method for manufacturing a contact type image sensor that can prevent cuts from occurring on the surface of an extraction electrode.
本発明は、上記した課題を解消するために、絶縁性基板
上に下部共通電極と光電変換層及び個別電極を有する受
光素子を複数設け、下部共通電極及び受光素子上に層間
絶縁層を設けるとともに、受光素子に接続するコンタク
ト・ホールを有する引き出し電極を備えた密着型イメー
ジセンサにおいて、引き出し電極外周部と受光素子の周
辺部との間に介在する層間絶縁層を複層設けるようにし
た点にある。In order to solve the above problems, the present invention provides a plurality of light receiving elements having a lower common electrode, a photoelectric conversion layer, and individual electrodes on an insulating substrate, and provides an interlayer insulating layer on the lower common electrode and the light receiving elements. In a close-contact image sensor equipped with an extraction electrode having a contact hole connected to a light-receiving element, a multi-layer interlayer insulating layer is provided between the outer periphery of the extraction electrode and the periphery of the light-receiving element. be.
また、本発明は、絶縁性基板上に下部共通電極と光電変
換層及び個別電極を有する受光素子を複数設け、下部共
通電極及び受光素子に透明な層間絶縁層を着膜し、個別
電極上部引き出し電極を形成し、層間絶縁層及び引き出
し電極に透明な保護層を着膜して受光部を形成する密着
型イメージセンサを製造する方法において、下部共通電
極及び受光素子に透明な第１の層間絶縁層を着膜し、個
別電極上部の第１の層間絶縁層に引き出し電極接続用の
第１の穴を設け、第１の層間絶縁層及び第１の穴にかけ
透明な第２の層間絶縁層を着膜し、第２の層間絶縁層の
、第１の穴を形成した位置上に第１の穴よりも大なる第
２の孔を設け、第１及び第２の穴に導電性金属を着膜し
て引き出し電極を形成するように構成した点にある。Furthermore, the present invention provides a plurality of light receiving elements having a lower common electrode, a photoelectric conversion layer, and individual electrodes on an insulating substrate, a transparent interlayer insulating layer is deposited on the lower common electrode and the light receiving elements, and an upper part of the individual electrodes is drawn out. A method for manufacturing a contact image sensor in which a light receiving part is formed by forming an electrode and depositing a transparent protective layer on an interlayer insulating layer and an extraction electrode, wherein a transparent first interlayer insulating layer is formed on a lower common electrode and a light receiving element. A first hole for connecting an extraction electrode is provided in the first interlayer insulating layer above the individual electrode, and a transparent second interlayer insulating layer is formed over the first interlayer insulating layer and the first hole. A second hole larger than the first hole is provided in the second interlayer insulating layer at the position where the first hole is formed, and a conductive metal is deposited in the first and second holes. The main feature is that the film is configured to form an extraction electrode.
引き出し電極外周部と、下部共通電極及び受光素子との
間に複層の透明な層間絶縁層を介在させ、これらの間に
充分な絶縁距離を確保して高温状態時の暗電流の増大を
抑制する。A multi-layer transparent interlayer insulating layer is interposed between the outer periphery of the extraction electrode, the lower common electrode and the light receiving element, and a sufficient insulation distance is ensured between them to suppress the increase in dark current during high temperature conditions. do.
また、絶縁性基板に設けた受光素子と下部共通電極とに
透明な第１の層間絶縁層を着膜し、受光素子上部の第１
の層間絶縁層に第１の穴を設け、次に透明な第２の層間
絶縁層を着膜し、次に、第１の穴を設けた位置上にこれ
よりも大きな第２の穴を設けた後、第１、第２の穴に導
電性金属を着腹巳で引き出し電極を形成する。In addition, a transparent first interlayer insulating layer is deposited on the light receiving element and the lower common electrode provided on the insulating substrate, and the first interlayer insulating layer on the upper part of the light receiving element is
A first hole is provided in the interlayer insulating layer, then a transparent second interlayer insulating layer is deposited, and then a second hole larger than the first hole is provided at the position where the first hole is provided. After that, conductive metal is drawn out into the first and second holes using a padding pad to form electrodes.
以下に本発明の詳細を、添付した図面を参照して説明す
る。The invention will now be described in detail with reference to the accompanying drawings.
第１図（Ａ）は本発明の密着型イメージセンサの一つの
受光素子の拡大平面を、同図（Ｂ）は同図（Ａ）切断線
Ａ−Ａより眺めた拡大断面を示す。FIG. 1(A) shows an enlarged plan view of one of the light receiving elements of the contact type image sensor of the present invention, and FIG. 1(B) shows an enlarged cross section taken along the cutting line A--A in FIG. 1(A).
第１図（Ａ）、（Ｂ）において、絶縁性基板１３の上に
設けられたＣｒ（クローム）よりなる共通下部Ｈｉ３に
は、アモルファス・シリコン（ａ−５ｉ）よりなる光電
変換層１と、その上面にＩＴｏ（酸化インジューム錫）
よりなる透明な個別電極２を設けてなる受光素子が複数
設けられている。この受光素子と下部共通電極３上に、
層厚とほぼ同し厚みを有する段差９を形成するようにし
て透明なポリイミドの第１の層間絶縁層４が設けられて
おり、さらに、この第１の層間絶縁層４の上に、層間絶
縁層４と等厚で、はぼ同し厚みを持つ段差１０を有する
、透明なポリイミドよりなる第２の層間絶縁層５が着膜
されている。In FIGS. 1A and 1B, a common lower portion Hi3 made of Cr (chromium) provided on an insulating substrate 13 includes a photoelectric conversion layer 1 made of amorphous silicon (a-5i), ITo (indium tin oxide) on the top surface
A plurality of light receiving elements each having transparent individual electrodes 2 are provided. On this light receiving element and the lower common electrode 3,
A first interlayer insulating layer 4 made of transparent polyimide is provided so as to form a step 9 having a thickness that is approximately the same as the thickness of the first interlayer insulating layer 4. A second interlayer insulating layer 5 made of transparent polyimide is deposited, having a step 10 having the same thickness and the same thickness as layer 4.
そして、個別電極２上ニこＡ１着膜用の第１の穴＋１（
第２図（Ｃ）参照）が設けられ、さら二こ、第２の層間
絶縁層５には、第１の穴１１よりも大きなＡ１着膜用の
第２の穴１２（第２図（Ｄ）参照）が設けられ、これら
の穴１１．１２！こＡ１金属が着膜され、そして、コン
タクト・ホール６を介して個別電極２に接続された引き
出し電極７が形成され、さらに、これらに透明なポリイ
ミドの保護層８を着膜してイメージセンサが構成される
。Then, the first hole +1 (
Further, the second interlayer insulating layer 5 is provided with a second hole 12 (see FIG. 2(D)) for A1 film deposition, which is larger than the first hole 11 (see FIG. 2(D)). ) are provided, and these holes 11.12! This A1 metal is deposited, and extraction electrodes 7 connected to the individual electrodes 2 through contact holes 6 are formed.Furthermore, a protective layer 8 of transparent polyimide is deposited on these to form an image sensor. configured.
上記したように、引き出し電極７の外周部の２個の段部
１４．１５と、光電変換層１及び個別電極２との間に、
第１、第２層間絶縁層４．５の段差９．１０が介在する
ため、引き出し電極７の外周部と、光電変換層１、ある
いは下部共通電極３との間の絶縁距離が長くなり、高温
状態における暗電流の増加が抑制される。As described above, between the two steps 14 and 15 on the outer periphery of the extraction electrode 7 and the photoelectric conversion layer 1 and the individual electrode 2
Since the step 9.10 of the first and second interlayer insulating layers 4.5 is present, the insulation distance between the outer periphery of the extraction electrode 7 and the photoelectric conversion layer 1 or the lower common electrode 3 becomes long, resulting in a high temperature. The increase in dark current in the state is suppressed.
次に、一つの受光素子を例示し、本発明による上記した
密着型イメージセンサの製造方法を第２図（Ａ）乃至（
Ｄ）に示す工程図により説明する。Next, a method of manufacturing the above-described contact type image sensor according to the present invention will be explained by illustrating one light receiving element as shown in FIGS. 2(A) to (2).
This will be explained using the process diagram shown in D).
まず、第２図（Ａ）において、絶縁性基板１３の上に、
スパッタリング法により１５００人の厚さに着膜したＣ
ｒ（クローム）をパターニングし、これにより形成され
た下部の共通電極３の上に、光電変換層ｌとしてアモル
ファス・シリコン（ａ−３ｉ）をＣＶＤ法により１３０
００人着膜し、この光電変換層１の上に、スパッタリン
グにより透明な個別電極２としてＩＴＯ（酸化インジュ
ーム錫）を６００人の厚みに積層し、パターニングを行
って受光素子を形成する。First, in FIG. 2(A), on the insulating substrate 13,
C deposited to a thickness of 1500 mm by sputtering method
R (chrome) is patterned, and on the lower common electrode 3 thus formed, amorphous silicon (a-3i) is deposited as a photoelectric conversion layer l by the CVD method.
On this photoelectric conversion layer 1, ITO (indium tin oxide) is laminated to a thickness of 600 mm as transparent individual electrodes 2 by sputtering, and patterned to form a light receiving element.
次に、透明なポリイミドの第１の層間絶縁層４を光電変
換層１と同一の厚み１３０００人にて、しかも、同し厚
みを持つ段差９が形成、保持されるようにして塗布し、
焼成、固化する。Next, a first interlayer insulating layer 4 of transparent polyimide is applied to the same thickness as the photoelectric conversion layer 1 with a thickness of 13,000 ml, and a step 9 having the same thickness is formed and maintained.
Firing and solidifying.
第２図（Ｂ）において、フォトリソグラフィ技術により
、個別電極２の上面の第１の層間絶縁層４に引き出し電
極接続用の穴１１を形成する。In FIG. 2(B), a hole 11 for connecting an extraction electrode is formed in the first interlayer insulating layer 4 on the upper surface of the individual electrode 2 by photolithography.
次に、第２図（Ｃ）に示すように、透明なポリイミドよ
りなる第２の層間絶縁層５を、１３０００人の厚みにて
、しかも、第２の層間絶縁層５の厚みと同し厚みの段差
ｌＯを有するようにして第１の層間絶縁層４及び穴１１
にわたって塗布し、焼成、固化する。Next, as shown in FIG. 2(C), a second interlayer insulating layer 5 made of transparent polyimide is formed to a thickness of 13,000 mm, and the same thickness as the second interlayer insulating layer 5. The first interlayer insulating layer 4 and the hole 11 have a step lO of
It is applied over a wide range of areas, fired, and solidified.
そして、第２図（Ｄ）！こ示すようシム層間絶縁層４に
設けた穴ＩＩの位置上に位置する第２の層間絶縁層５に
、第１の層間絶縁層４に設けた穴１１よりも大きな穴１
２をフォトリソグラフィ技術により形成し、これにより
、階段状をなすとともに、穴１１とこれより大きな穴１
２とが連続して形成される。And Figure 2 (D)! As shown, a hole 1 larger than the hole 11 provided in the first interlayer insulating layer 4 is formed in the second interlayer insulating layer 5 located above the position of the hole II provided in the shim interlayer insulating layer 4.
2 is formed by photolithography technology, thereby forming a stepped shape and forming a hole 11 and a larger hole 1.
2 are formed consecutively.
次にスパッタリング技術により、Ａ１を１００００人の
厚みにて着膜するのであるが、第１の層間絶縁層４の穴
１１は第２の層間絶縁層５の穴よりも小さいため、先に
第１の層間絶縁層４の穴１１の表面から着膜が行われ、
次に、大きな穴１２の表面が着膜された後、パターニン
グして引き出し電極７が形成される。これに、コンタク
ト・ホール６を設け、第１図（Ａ）、（Ｂ）に示すよう
に、イメージセンサの受光素子が構成される。Next, A1 is deposited to a thickness of 10,000 layers using sputtering technology, but since the holes 11 in the first interlayer insulating layer 4 are smaller than the holes in the second interlayer insulating layer 5, the first The film is deposited from the surface of the hole 11 of the interlayer insulating layer 4,
Next, after a film is deposited on the surface of the large hole 12, it is patterned to form the extraction electrode 7. A contact hole 6 is provided in this, and a light receiving element of an image sensor is constructed as shown in FIGS. 1(A) and 1(B).
ところで、第２の層間絶縁層５の穴１２の太きさを第１
の層間絶縁層４の穴１１の大きさと同−シム形成してＡ
Ｉをスバ、タリング法により着膜すると、同一の大きさ
で、２６０００人の深さの穴に、換言すると、狭い空間
にて１００００人の厚みを形成するようにＡＩを着膜す
るため、六周面の全面にわたって−様な着膜を行うこと
が困難となり、Ａ１電極表面に傷、所謂、「切れ」を生
しる場合がある。By the way, the thickness of the hole 12 in the second interlayer insulating layer 5 is
A shim is formed with the same size as the hole 11 in the interlayer insulating layer 4.
When I is deposited by the thinning method, the AI is deposited in a hole of the same size and 26,000 people deep, or in other words, in a narrow space with a thickness of 10,000 people. It becomes difficult to form a uniform film over the entire circumferential surface, and scratches, so-called "cuts" may occur on the surface of the A1 electrode.
しかるに、本発明のように、穴１１、穴１１よりも大き
な穴１２の順に連続した穴が形成されているため、上記
したように小さい穴１１から着膜され、次に、大きい穴
１２が着膜されるため、−様な着膜が行われ、このため
、着膜したＡＩ金属面に切れを生しる事が無い。However, as in the present invention, since the holes are formed in the order of hole 11 and hole 12 larger than hole 11, the film is deposited from the small hole 11 as described above, and then the large hole 12 is deposited. Since the film is coated, the film is deposited in a negative manner, and therefore no cuts occur on the coated AI metal surface.
このようにして製造された受光部を搭載した、Ｂ４４層
サイズ、３００ｓｐｉの密着型イメージセンサを暗状態
にし、２５℃、及び７０℃にて動作させた所、従来の密
着型イメージセンサの暗状態の暗電流出力信号が、２５
℃動作時では５０ｍＶ、７０℃動作時では１２０ｍＶで
あったのに対し、本発明により製造されたものによれば
、２５℃動作時では５０ｍＶ、７０℃動作時でも６０ｍ
Ｖとなり、高温時の暗電流が抑制され、良好な温度特性
が得られた。A contact type image sensor with a B44 layer size and 300 spi equipped with the light receiving section manufactured in this way was put into a dark state and operated at 25°C and 70°C. The dark state of the conventional contact type image sensor was The dark current output signal of 25
While the voltage was 50 mV when operating at 25°C and 120 mV when operating at 70°C, the voltage of the product manufactured according to the present invention was 50 mV when operating at 25°C and 60 mV when operating at 70°C.
V, dark current at high temperatures was suppressed, and good temperature characteristics were obtained.
なお、密着型イメージセンサのマトリックス回路に２層
の絶縁層を設けるのが普通であるので、マトリックス回
路側の絶縁層と共通にすることにより、受光部用の層間
絶縁層を新たに設ける工程を省略することが可能となる
。Note that it is common to provide two insulating layers in the matrix circuit of a contact image sensor, so by using the same insulating layer on the matrix circuit side, it is possible to eliminate the process of creating a new interlayer insulating layer for the light receiving section. It is possible to omit it.
以上述べたように本発明によれば、絶縁性基板上に下部
共通電極と光電変換層及び個別電極を有する受光素子を
複数設け、下部共通電極及び受光素子上に層間絶縁層を
設けるとともに、受光素子に接続するコンタクト・ホー
ルを備える引き出し電極を設けた密着型イメージセンサ
において、引き出し電極外周部と受光素子の周辺部との
間に介在する層間絶縁層を複層構造に構成したので、引
き出し電極外周部と、下部共通電極及び受光素子との間
の絶縁距離を大きくすることが可能となり、これにより
、高温状態時の暗電流の増加を大幅に抑制するこが可能
となり、温度特性を向上することが出来る。As described above, according to the present invention, a plurality of light receiving elements having a lower common electrode, a photoelectric conversion layer and individual electrodes are provided on an insulating substrate, an interlayer insulating layer is provided on the lower common electrode and the light receiving elements, and a light receiving element is provided on an insulating substrate. In a contact image sensor equipped with an extraction electrode with a contact hole connected to the element, the interlayer insulating layer interposed between the outer periphery of the extraction electrode and the periphery of the light-receiving element has a multilayer structure. It is possible to increase the insulation distance between the outer periphery, the lower common electrode, and the light receiving element, which makes it possible to significantly suppress the increase in dark current during high temperature conditions, and improves temperature characteristics. I can do it.
また、本発明によれば、イメージセンサを製造する際に
、絶縁基板に設けた下部共通電極及び受光素子に透明な
第１の層間絶縁層を着膜し、個別電極上部の第１の層間
絶縁層に引き出し電極接続用の第１の穴を設け、第１の
層間絶縁層及び第１の穴にかけて透明な第２の層間絶縁
層を着膜し、第１の穴を形成した位置の、第２の層間絶
縁層の、第１の穴を形成した位置上に第１の穴よりも大
なる第２の穴を設け、第１及び第２の穴に導電性金属を
着膜して引き出し電極を形成するようにしたので、第１
、第２の層間絶縁層により、引き出し電極と受光部側及
び下部共通電極側との間の絶縁距離を大にすることが可
能となり、このため、高温動作時のリーク電流の増加を
大幅に抑制し、これにより、イメージセンサの温度特性
を良好すにすることが可能になる。Further, according to the present invention, when manufacturing an image sensor, a transparent first interlayer insulating layer is deposited on the lower common electrode and the light receiving element provided on the insulating substrate, and the first interlayer insulating layer on the upper part of the individual electrodes is formed. A first hole for connecting an extraction electrode is provided in the layer, a transparent second interlayer insulating layer is deposited over the first interlayer insulating layer and the first hole, and a first hole is formed at the position where the first hole is formed. A second hole larger than the first hole is provided in the second interlayer insulating layer at the position where the first hole is formed, and a conductive metal is deposited on the first and second holes to form an extraction electrode. Since the first
, the second interlayer insulating layer makes it possible to increase the insulation distance between the extraction electrode and the light-receiving section side and the lower common electrode side, thereby greatly suppressing the increase in leakage current during high-temperature operation. However, this makes it possible to improve the temperature characteristics of the image sensor.
また、第２の層間絶縁層の第２の穴を、第１の層間絶縁
層の第１の穴よりも大きくして導電性金属を着膜するた
め、導電性金属よりなる引き出し電極面に切れを生しさ
せることなく、傷のない引き出し電極を製造することが
出来る。In addition, since the second hole of the second interlayer insulating layer is made larger than the first hole of the first interlayer insulating layer and the conductive metal is deposited, a cut is made on the surface of the lead-out electrode made of the conductive metal. It is possible to manufacture a scratch-free extraction electrode without causing any scratches.
第１図（Ａ）は本発明の密着型イメージセンサの一つの
受光素子の拡大平面図、同図（Ｂ）は同図（Ａ）の切断
線Ａ−Ａから眺めた拡大断面図、第２図（Ａ）乃至（Ｄ
）は本発明のイメージセンサの製造方法の工程を示す図
、第３図（Ａ）は従来のイメージセンサの一つの受光素
子の拡大平面図、同図（Ｂ） ハ同図（Ａ） ノｔｉｌ
Ｊ断ｖＡＢ−Ｂから眺めた拡大断面図である。
１・・光電変換層、２・・透明な個別電極、３・・下部
共通電極、４・・第１の層間絶縁層、５・・第２の層間
絶縁層、６・・コンタクト・ホール、７・・引き出し電
極、８・・透明な保護層、９及び１０・・第１及び第２
の層間絶縁層の段差、１１・・第１の層間絶縁層５に穿
設した穴、１２・・第２の層間絶縁層５二穿設した穴、
１３・・絶縁性基板、１４及び１５・・引き出し電極の
外周部に形成した段部、
出 願 人 富士ゼロ、クス株式会社代理人 弁理
士 阿部 配置（外７名）第１図
第２図
第３図FIG. 1(A) is an enlarged plan view of one light-receiving element of the contact type image sensor of the present invention, FIG. Figures (A) to (D
3(A) is an enlarged plan view of one light-receiving element of a conventional image sensor, FIG.
It is an enlarged sectional view seen from J section vAB-B. DESCRIPTION OF SYMBOLS 1...Photoelectric conversion layer, 2...Transparent individual electrode, 3...Lower common electrode, 4...First interlayer insulating layer, 5...Second interlayer insulating layer, 6...Contact hole, 7 ...Extraction electrode, 8..Transparent protective layer, 9 and 10..first and second
Steps in the interlayer insulating layer, 11...holes drilled in the first interlayer insulating layer 5, 12...holes drilled in the second interlayer insulating layer 52,
13... Insulating substrate, 14 and 15... Stepped portion formed on the outer periphery of the extraction electrode, Applicant: Fuji Zero, Kusu Co., Ltd. Agent: Patent Attorney: Abe Layout (7 persons) Figure 1 Figure 2 Figure 3
Claims (2)
別電極を有する受光素子を複数設け、上記下部共通電極
及び受光素子上に層間絶縁層を設けるとともに、上記受
光素子に接続するコンタクト・ホールを有する引き出し
電極を備えた密着型イメージセンサにおいて、上記引き
出し電極外周部と受光素子の周辺部との間に介在する層
間絶縁層を複層構造になしたことを特徴とする密着型イ
ージセンサ。(1) A plurality of light receiving elements having a lower common electrode, a photoelectric conversion layer, and individual electrodes are provided on an insulating substrate, an interlayer insulating layer is provided on the lower common electrode and the light receiving elements, and a contact A close-contact image sensor equipped with an extraction electrode having a hole, characterized in that an interlayer insulating layer interposed between the outer periphery of the extraction electrode and the periphery of a light-receiving element has a multilayer structure.
別電極を有する受光素子を複数設け、上記下部共通電極
及び受光素子に透明な層間絶縁層を着膜し、上記個別電
極上部に引き出し電極を形成し、上記層間絶縁層及び引
き出し電極に透明な保護層を着膜して密着型イメージセ
ンサを製造する方法において、上記下部共通電極及び受
光素子に透明な第１の層間絶縁層を着膜し、上記個別電
極の上部の第１の層間絶縁層に引き出し電極接続用の第
１の穴を設け、上記第１の層間絶縁層及び第１の穴にか
けて透明な第２の層間絶縁層を着膜し、上記第２の層間
絶縁層の、上記第１の穴を形成した位置上に該第１の穴
よりも大なる第２の穴を設け、上記第１及び第２の穴に
導電性金属を着膜して引き出し電極を形成することを特
徴とする密着型イージセンサの製造方法。(2) A plurality of light-receiving elements having a lower common electrode, a photoelectric conversion layer, and individual electrodes are provided on an insulating substrate, a transparent interlayer insulating layer is deposited on the lower common electrode and the light-receiving elements, and the layer is drawn out above the individual electrodes. In the method of manufacturing a contact image sensor by forming an electrode and depositing a transparent protective layer on the interlayer insulating layer and the extraction electrode, a transparent first interlayer insulating layer is deposited on the lower common electrode and the light receiving element. A first hole for connecting an extraction electrode is provided in the first interlayer insulating layer above the individual electrode, and a transparent second interlayer insulating layer is formed over the first interlayer insulating layer and the first hole. A second hole larger than the first hole is provided in the second interlayer insulating layer at the position where the first hole is formed, and the first and second holes are conductive. 1. A method for manufacturing a close-contact type easy sensor, the method comprising forming an extraction electrode by depositing a metal film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2309351A JP2910227B2 (en) | 1990-11-15 | 1990-11-15 | Manufacturing method of contact image sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2309351A JP2910227B2 (en) | 1990-11-15 | 1990-11-15 | Manufacturing method of contact image sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04180264A true JPH04180264A (en) | 1992-06-26 |
| JP2910227B2 JP2910227B2 (en) | 1999-06-23 |
Family
ID=17991964
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2309351A Expired - Lifetime JP2910227B2 (en) | 1990-11-15 | 1990-11-15 | Manufacturing method of contact image sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2910227B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6600172B1 (en) | 1999-11-26 | 2003-07-29 | Nec Corporation | Image sensor and method of fabricating the same |
-
1990
- 1990-11-15 JP JP2309351A patent/JP2910227B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6600172B1 (en) | 1999-11-26 | 2003-07-29 | Nec Corporation | Image sensor and method of fabricating the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2910227B2 (en) | 1999-06-23 |
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