JPH0417713B2 - - Google Patents
Info
- Publication number
- JPH0417713B2 JPH0417713B2 JP4350983A JP4350983A JPH0417713B2 JP H0417713 B2 JPH0417713 B2 JP H0417713B2 JP 4350983 A JP4350983 A JP 4350983A JP 4350983 A JP4350983 A JP 4350983A JP H0417713 B2 JPH0417713 B2 JP H0417713B2
- Authority
- JP
- Japan
- Prior art keywords
- water
- delay
- storage tank
- tank
- harmful metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 116
- 229910052751 metal Inorganic materials 0.000 claims description 32
- 239000002184 metal Substances 0.000 claims description 32
- 238000005342 ion exchange Methods 0.000 claims description 21
- 238000003860 storage Methods 0.000 claims description 19
- 150000002739 metals Chemical class 0.000 claims description 12
- 229910021645 metal ion Inorganic materials 0.000 claims description 5
- 239000011347 resin Substances 0.000 claims description 5
- 229920005989 resin Polymers 0.000 claims description 5
- 238000005192 partition Methods 0.000 claims description 4
- 239000012634 fragment Substances 0.000 claims description 2
- 239000000843 powder Substances 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 10
- 239000002351 wastewater Substances 0.000 description 7
- 231100001261 hazardous Toxicity 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 5
- 238000003754 machining Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- 239000002699 waste material Substances 0.000 description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 231100000331 toxic Toxicity 0.000 description 3
- 230000002588 toxic effect Effects 0.000 description 3
- 230000003111 delayed effect Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000002440 industrial waste Substances 0.000 description 2
- NWUYHJFMYQTDRP-UHFFFAOYSA-N 1,2-bis(ethenyl)benzene;1-ethenyl-2-ethylbenzene;styrene Chemical compound C=CC1=CC=CC=C1.CCC1=CC=CC=C1C=C.C=CC1=CC=CC=C1C=C NWUYHJFMYQTDRP-UHFFFAOYSA-N 0.000 description 1
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- -1 GaAs compound Chemical class 0.000 description 1
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 239000003456 ion exchange resin Substances 0.000 description 1
- 229920003303 ion-exchange polymer Polymers 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000008213 purified water Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、有害な金属物質が微粉末状で含まれ
ている、有害金属含有水から、有害金属を取り除
き、この液を再度利用することを可能にした有害
金属含有水の処理装置に関する。[Detailed Description of the Invention] Industrial Application Field The present invention makes it possible to remove harmful metals from water containing harmful metals, which contains harmful metal substances in the form of fine powder, and to reuse this liquid. This invention relates to a treatment device for water containing hazardous metals.
従来例の構成とその問題点
半導体装置産業の分野では、シリコン、ゲルマ
ニウムがその原材料の主流であつたが、近年、こ
れらの原材料に加えて、−族化合物半導体も
多用されるに至つている。この−Ｖ族化合物半
導体は、発光ダイオード、半導体レーザあるいは
ホール素子などの原材料となつている。Structures of Conventional Examples and Their Problems In the field of semiconductor device industry, silicon and germanium have been the mainstream raw materials, but in recent years, in addition to these raw materials, - group compound semiconductors have also come into widespread use. This -V group compound semiconductor is a raw material for light emitting diodes, semiconductor lasers, Hall elements, and the like.
ところで、たとえば、砒化ガリウム（GaAs）、
砒化インジウム（InAs）あるいは砒化アルミニ
ウム（AlAs）などの化合物半導体の構成要素で
ある砒素（As）は、人体に対して極めて有害な
ものであり、このような物質によつて、作業環境
は勿論のこと自然環境が汚染されることを防ぐこ
とは、これを使用するものに課せられる最大の義
務でもある。上記の−Ｖ族化合物半導体を用い
て各種の半導体装置を製作するにあたり、−Ｖ
族化合物半導体ウエーハに対する機械研磨、切
削、切断などの機械加工を施す場合があるが、こ
の機械加工工程では微粉末状の加工屑の発生が避
けられない。そして、この加工屑にAsが含まれ
ているときには、これの飛散による作業環境汚染
を防止することが極めて大切となる。このため、
従来は、機械加工時に加工部へ水を流し、加工手
段の冷却と加工屑の飛散の防止をはかる方法が採
用されていた。 By the way, for example, gallium arsenide (GaAs),
Arsenic (As), which is a component of compound semiconductors such as indium arsenide (InAs) and aluminum arsenide (AlAs), is extremely harmful to the human body, and such substances can cause harm to the work environment as well as to the human body. Preventing the natural environment from being polluted is the greatest duty of those who use them. When manufacturing various semiconductor devices using the above-mentioned -V group compound semiconductor, -V
BACKGROUND ART Group compound semiconductor wafers are sometimes subjected to mechanical processing such as mechanical polishing, cutting, cutting, etc., but the generation of fine powder-like processing waste is unavoidable in this machining process. When this processing waste contains As, it is extremely important to prevent contamination of the working environment due to its scattering. For this reason,
Conventionally, a method has been adopted in which water is flowed into the machining area during machining to cool the machining means and prevent the scattering of machining debris.
ところで、この方法によると、加工屑の飛散で
作業環境が汚染される問題は解決できるが、加工
部から排出される水の中に微粉末状の加工屑が含
まれるところとなり、これをそのまま排出水とし
て外部へ排出させることができなくなる。 By the way, this method solves the problem of contaminating the working environment due to scattering of processing waste, but the water discharged from the processing section contains fine powder of processing waste, and this method cannot be directly discharged. It becomes impossible to discharge it outside as water.
したがつて、加工部から排出された廃水を産業
廃棄物と取り扱わねばならず、これにかなりの費
用がかかる。また、半導体装置産業の分野で使用
する水の大半は、通常の水よりも高価格な純水で
あるため、これの消費を極力抑えねばならない
が、上記の加工部から排出される水にAs等の有
害な物質が含まれたときには、全ての水を廃棄物
として処分しなければならず、このため、純水の
消費量を少くすることは困難であつた。 Therefore, the wastewater discharged from the processing section must be treated as industrial waste, which incurs considerable costs. In addition, most of the water used in the semiconductor device industry is pure water, which is more expensive than regular water, so consumption of this water must be minimized, but the water discharged from the processing areas mentioned above is If the water contains harmful substances such as deionized water, all of the water must be disposed of as waste, making it difficult to reduce the amount of pure water consumed.
発明の目的
本発明は、有害な金属を含有する水の再利用を
はかり、排出水としてこれを外部に排出させるこ
とあるいは産業廃棄物として処理することを不要
にし、しかも、水の消費を抑えることのできる処
理装置の提供を目的とするものである。Purpose of the Invention The present invention aims to reuse water containing harmful metals, eliminates the need to discharge it to the outside as wastewater or treat it as industrial waste, and further reduces water consumption. The purpose is to provide a processing device that can perform
発明の構成
本発明の有害金属含有水の処理装置は、加工部
から排出される有害金属含有水の流入ならびに流
出口をもち、前記有害金属含有水の流入、流出の
間に所定の時間遅れを付加する遅延貯水槽と、同
遅延貯水槽から流出する有害金属含有水が流入
し、同有害金属含有水中の有害金属イオンをイオ
ン交換吸着するイオン交換手段と、同イオン交換
手段を通過した水を貯水する貯水槽と、同貯水槽
の水を前記加工部へ送水する送水手段と具備する
ものである。このように構成された本発明の有害
金属含有水の処理装置では、加工部から排出され
る水の中に混入した有害金属微粉末の大半が遅延
貯水槽における遅延期間に水に溶け、また、この
期間に溶けきれなかつたものは沈降する。このた
め、遅延貯水槽からは有害金属イオンを含んだ水
がイオン交換手段へ向けて流出する。したがつ
て、イオン交換手段においてイオン交換吸着され
ることのない有害金属微粉末が、このイオン交換
手段を通過して貯水槽に到達することはなく、加
工部には清浄化された水が戻されることになる。Structure of the Invention The apparatus for treating hazardous metal-containing water of the present invention has an inlet and an outlet for the hazardous metal-containing water discharged from a processing section, and has a predetermined time delay between the inflow and outflow of the hazardous metal-containing water. An additional delay storage tank, an ion exchange means for ion exchange adsorption of harmful metal ions in the water containing harmful metals, into which the water containing harmful metals flows out from the delay storage tank, and an ion exchange means for ion exchange adsorption of harmful metal ions in the water containing harmful metals; The apparatus includes a water storage tank for storing water, and a water supply means for transporting water from the water storage tank to the processing section. In the hazardous metal-containing water treatment apparatus of the present invention configured as described above, most of the hazardous metal fine powder mixed in the water discharged from the processing section is dissolved in the water during the delay period in the delay water storage tank, and Anything that is not completely dissolved during this period will settle. Therefore, water containing harmful metal ions flows out from the delay water tank toward the ion exchange means. Therefore, harmful metal fine powder that is not ion-exchanged and adsorbed by the ion exchange means does not pass through the ion exchange means and reach the water tank, and purified water is returned to the processing area. It will be.
実施例の説明
以下に図面を参照して本発明を詳しく説明す
る。第１図は、本発明の有害金属含有水の処理装
置をGaAs半導体装置のウエーハ切断工程に適用
した実施例を示す図である。第１図において、１
はウエーハを単位素子に切断するためのダイシン
グソー、２はダイシングソーで使用され、ここか
ら排出される有害金属含有水を貯め、しかも、こ
れの流入と流出との間に所定の遅延時間を与える
遅延貯水槽、３はイオン交換樹脂を有するイオン
交換手段、４はイオン交換手段において処理され
た水を貯める貯水槽、５および６は送水ポンプ、
そして７はダイシングソー１へ貯水槽４の水を送
る給水管である。DESCRIPTION OF EMBODIMENTS The present invention will be described in detail below with reference to the drawings. FIG. 1 is a diagram showing an embodiment in which the apparatus for treating harmful metal-containing water of the present invention is applied to a wafer cutting process for GaAs semiconductor devices. In Figure 1, 1
is a dicing saw for cutting the wafer into unit elements, and 2 is used in the dicing saw to store harmful metal-containing water discharged from the dicing saw, and also provides a predetermined delay time between the inflow and outflow of this water. 3 is an ion exchange means having an ion exchange resin; 4 is a water storage tank for storing water treated in the ion exchange means; 5 and 6 are water pumps;
A water supply pipe 7 supplies water from the water tank 4 to the dicing saw 1.
以上のように構成された本発明の処理装置では
以下のような処理が実行される。 The processing device of the present invention configured as described above executes the following processing.
ダイシングソー１において、たとえば、GaAs
ウエーハの切断がなされるものとすると、ダイシ
ングソー１から排出される水には、GaAs化合物
の切屑である微粉末が混入し、これが遅延貯水槽
２へ流入する。遅延貯水槽２は、その流入口２１
へ流入した水が流出口２２から流出するまでの間
に所定の時間（３時間程度）の遅延時間を与える
ためのものであり、この遅延の間に有害金属であ
るAsが酸化物となり、水に溶け込んでしまう。
また、この間に完全に溶解しきらないものは沈降
し、さらに長時間にわたつて遅延貯水槽２の中に
とどまるところとなり、これもまた完全に溶解す
る。したがつて、流出口２２からイオン交換手段
３へ向つて流出する水にはAsイオンのみが含ま
れるところとなり、イオン交換手段３を通過する
過程でAsイオンはイオン交換吸着により除去さ
れる。貯水槽４には、Asイオンが殆んど除去さ
れた水が流入する。 In the dicing saw 1, for example, GaAs
When the wafer is cut, the water discharged from the dicing saw 1 is mixed with fine powder, which is the chips of the GaAs compound, and this flows into the delay water storage tank 2. The delay water tank 2 has an inlet 21 thereof.
This is to provide a predetermined delay time (approximately 3 hours) before the water flowing into the outlet flows out from the outlet 22. During this delay, the toxic metal As becomes oxide and the water It blends into.
Additionally, during this time, any material that is not completely dissolved will settle and remain in the delay storage tank 2 for an even longer period of time, and will also be completely dissolved. Therefore, the water flowing out from the outlet 22 toward the ion exchange means 3 contains only As ions, and in the process of passing through the ion exchange means 3, the As ions are removed by ion exchange adsorption. Water from which most of the As ions have been removed flows into the water storage tank 4.
ところで、この貯水槽４は、ダイシングソー１
へ送り込む水を常時必要量だけ確保し、送水が途
絶えることのないようにするためのものであり、
その容量は単位時間当りの送水量を考慮して決定
する。この貯水槽４に貯められた水は、給水管７
を通つて再びダイシングソー１へ送水される。 By the way, this water tank 4 is connected to the dicing saw 1.
This is to ensure that only the necessary amount of water is sent to the facility at all times, and that water supply is never interrupted.
Its capacity is determined by considering the amount of water conveyed per unit time. The water stored in this water tank 4 is transferred to the water supply pipe 7
The water is sent to the dicing saw 1 again through the dicing saw.
以上説明した本発明の処理装置では、遅延貯水
槽２を配設することが特に大切であり、これが配
設されていない場合には、微粉末状の切屑が混入
した水がそのままイオン交換手段３へ流入するた
め、有害金属であるAsの除去が不十分となり、
この水を再利用することはできない。 In the treatment apparatus of the present invention described above, it is particularly important to provide the delay water storage tank 2. If this is not provided, the water mixed with fine powder chips will be directly transferred to the ion exchange means 3. As a result, the removal of As, a toxic metal, is insufficient.
This water cannot be reused.
第２図ａ〜ｃは、上記の遅延貯水槽の具体的な
構造例を示す図である。同図ａは、長大なパイプ
８を図示するように蛇行させたものであり、ダイ
シングソー１から排出される単位時間当りの排水
量と、このパイプ８での遅延時間とを考慮してパ
イプ８の内径と長さは決定される。例えば、パイ
プ８として内径が４cmのものを用い、毎分１の
排水を貯めて、これに３時間の遅延時間を与える
ものとすると、パイプ８の流さは、
＝1000／２×２×3.14×180＝14331（cm）
となる。すなわち、内径４cm、長さが約140ｍの
パイプを蛇行させたものを遅延貯水槽２として用
いればよいことになる。 FIGS. 2a to 2c are diagrams showing specific structural examples of the above-mentioned delay water tank. Figure a shows a long pipe 8 meandering as shown, and the pipe 8 is designed in consideration of the amount of water discharged from the dicing saw 1 per unit time and the delay time in this pipe 8. The inner diameter and length are determined. For example, if we use a pipe 8 with an inner diameter of 4 cm and store wastewater at a rate of 1 per minute and give it a delay time of 3 hours, the flow rate of pipe 8 is: = 1000/2 x 2 x 3.14 x 180=14331 (cm). In other words, a meandering pipe with an inner diameter of 4 cm and a length of approximately 140 m may be used as the delay water tank 2.
第２図ｂは、単一の貯水槽９の中に多数の隔壁
板１０〜１３を配置したものである。この貯水槽
では、流入口９１から流入した水の流出口９２へ
向う水平方向の流れが隔壁板１０〜１３によつて
阻止され、矢印で示すように貯水槽内を流れる。
そして、上記と同様、毎分１の排水が流入口９
１から流入し、これに約３時間の遅延時間を与え
るものとすると、貯水槽９の実質貯水量（破線以
下の容積）を180程度に設定することにより目
的が達成される。 FIG. 2b shows a single water tank 9 in which a large number of partition plates 10 to 13 are arranged. In this water tank, a horizontal flow of water flowing from an inlet 91 toward an outlet 92 is blocked by the partition plates 10 to 13, and flows within the tank as shown by arrows.
Then, as above, 1 waste water per minute flows into the inlet 9.
1, and a delay time of about 3 hours is given to this, the purpose can be achieved by setting the actual water storage amount (volume below the broken line) of the water tank 9 to about 180.
第２図ｃは第３図ａ，ｂで示したものにくらべ
てより簡略化した貯水槽であり、貯水槽１４の中
に、例えば、ポリプロピレン樹脂塊を粉砕して得
た樹脂破片１５を充填して構成されている。この
貯水槽では、流入口１４１から流入した水は、樹
脂破片１５の〓間を通過して流出口１４２の方向
へ向う。この通路は、樹脂破片１５を微細なもの
とすることによつて極めて長くなり、このことに
より遅延時間が与えられる。また、イオン化して
ない金属微粉末が樹脂破片１５の表面に付着し、
流出口１４２から金属微粉末が流出する効果も奏
される。この構造の貯水槽では、遅延時間を単純
な計算に基いて定めることは容易でなく、このた
め、予め実験を行つて遅延時間を定めておくこと
がのぞましい。 FIG. 2c shows a water storage tank that is more simplified than those shown in FIGS. It is configured as follows. In this water tank, water flowing in from the inlet 141 passes between the resin pieces 15 and heads toward the outlet 142 . This path is made extremely long by the fineness of the resin debris 15, which provides a delay time. In addition, non-ionized metal fine powder adheres to the surface of the resin fragments 15,
The effect of the metal fine powder flowing out from the outlet 142 is also achieved. In a water tank having this structure, it is not easy to determine the delay time based on simple calculations, and therefore it is desirable to determine the delay time by conducting experiments in advance.
次に、本発明の処理装置の効果確認のための実
験結果について説明する。この実験では、遅延貯
水槽２を第２図ｃで示した構造で容量が100の
第１貯水槽と、単に貯水のみを行う構造で容量が
100の第２貯水槽とを直列に繋いで構成し、前
者の流入口にGaAsウエーハのダイシングソーか
ら排出されるAs含有水を１分間当り１の量で
流入させた。なお、遅延貯水槽２における遅延時
間を約３時間、イオン交換手段の通過時間を約30
分に定め、遅延貯水槽２の流入口、すなわち第１
貯水槽の流入口でのAs濃度N1、遅延貯水槽２の
流出口、すなわち第２貯水槽の流出口でのAs濃
度N2、そして、イオン交換手段の流出口でのAs
濃度をN3とし、これらを測定したところ、N1＝
2.5ppm、N2＝1.2ppmそしてN3＜0.005ppmの結
果が得られた。また、N2は、時間の経過とはほ
ぼ無関係な一定値であつた。 Next, experimental results for confirming the effects of the processing apparatus of the present invention will be explained. In this experiment, the delay water storage tank 2 has the structure shown in Figure 2c and has a capacity of 100 ml, and the structure that only stores water has a capacity of 1.
100 second water tanks were connected in series, and As-containing water discharged from a GaAs wafer dicing saw was allowed to flow into the inlet of the former at a rate of 1 per minute. The delay time in the delay water tank 2 is approximately 3 hours, and the passage time through the ion exchange means is approximately 30 hours.
the inlet of the delay water tank 2, i.e. the first
As concentration N 1 at the inlet of the water tank, As concentration N 2 at the outlet of the delayed water tank 2, that is, the outlet of the second water tank, and As at the outlet of the ion exchange means.
When the concentration was set to N 3 and these were measured, N 1 =
Results were obtained of 2.5 ppm, N 2 = 1.2 ppm and N 3 <0.005 ppm. Furthermore, N 2 was a constant value that was almost unrelated to the passage of time.
以上、本発明を有害金属としてAsを含有する
排出水の処理を例に説明したのであるが、本発明
の装置による処理はこの例に限られるものではな
く、遅延の過程で微粉末水中に溶けうる他の有害
金属の処理にも適用することができること勿論で
ある。また、イオン交換手段３の交換は、ここか
ら流出する水の純度をチエツクし、純度が所定値
以下に達したところで行うようにすればよい。 The present invention has been explained above using as an example the treatment of waste water containing As as a toxic metal, but the treatment by the apparatus of the present invention is not limited to this example, Of course, the present invention can also be applied to the treatment of other harmful metals. Furthermore, the ion exchange means 3 may be replaced when the purity of the water flowing out from the ion exchange means 3 is checked and the purity reaches a predetermined value or less.
発明の効果
本発明の処理装置は、閉ループ形の構成により
排出される水の再利用をはかるものであるため、
排出水に有害な金属が含まれていても、これの廃
棄処理が不要となり、廃棄費用が不要となるこ
と、使用する水が高価格の純水であつても、これ
が再利用されるため、消費量は極めて少いものと
なることなどの効果を奏する。また、本発明の処
理装置の使用によれば、有害は金属微粉末を水中
にとり込み、これの飛散を防ぐことによつて作業
環境の清浄化をはかつても、有害金属を含む水の
廃棄処理が不要であるため、有害な金属微粉末が
飛散するおそれがある各種の加工工程に適用して
その環境を清浄化することが容易となる。なお、
本発明の処理装置は、単一の加工工程に常に対応
させて設置する必要はなく、複数の加工部から排
出される排出水を処理装置へ流入させ、集中的に
処理するようにしてもよい。Effects of the Invention Since the treatment device of the present invention aims to reuse discharged water through a closed loop configuration,
Even if the waste water contains harmful metals, there is no need to dispose of it and there are no disposal costs, and even if the water used is expensive pure water, it is reused. This has the effect of reducing consumption to an extremely low level. In addition, by using the treatment device of the present invention, the work environment can be purified by introducing harmful metal fine powder into the water and preventing it from scattering, but it is also possible to dispose of water containing harmful metals. Since this method is unnecessary, it is easy to apply it to various processing steps where harmful fine metal powder may be scattered to clean the environment. In addition,
The treatment device of the present invention does not need to be installed always in correspondence with a single processing step, and wastewater discharged from a plurality of processing sections may be made to flow into the treatment device for intensive treatment. .
第１図は、本発明の処理装置の構成を示す図、
第２図ａ〜ｃは、本発明の処理装置で用いる遅延
貯水槽の構造を示す図である。
１……ダイシングソー、２……遅延貯水槽、３
……イオン交換手段、４……貯水槽、５，６……
送水ポンプ、７……給水管、８……遅延貯水槽形
成用のパイプ、９，１４……貯水槽、２１，９
１，１４１……有害金属含有水の流入口、２２，
９２，１４２……流出口、１０〜１３……隔壁
板、１５……樹脂破片。
FIG. 1 is a diagram showing the configuration of a processing device of the present invention,
FIGS. 2a to 2c are diagrams showing the structure of a delay water storage tank used in the processing apparatus of the present invention. 1... Dicing saw, 2... Delay water tank, 3
...Ion exchange means, 4...Water tank, 5, 6...
Water pump, 7... Water supply pipe, 8... Pipe for forming a delayed water tank, 9, 14... Water tank, 21, 9
1,141...Inlet of water containing harmful metals, 22,
92,142... Outlet, 10-13... Partition plate, 15... Resin debris.
Claims (1)
ならびに流出口をもち、前記有害金属含有水の流
入、流出の間に所定の時間遅れを与える遅延貯水
槽と、同遅延貯水槽から流出する有害金属イオン
を含有する水を通過させ、通過の過程で前記有害
金属イオンをイオン交換吸着するイオン交換手段
と、同イオン交換手段を通過した水を貯水する貯
水槽と、同貯水槽の水を前記加工部へ送水する循
環路形成用の送水手段を具備する有害金属含有水
の処理装置。 ２ 遅延貯水槽が、長大なパイプで構成されてい
ることを特徴とする特許請求の範囲第１項に記載
の有害金属含有水の処理装置。 ３ 遅延貯水槽が、複数枚の隔壁板で横方向の流
れを阻止した貯水槽であることを特徴とする特許
請求の範囲第１項に記載の有害金属含有水の処理
装置。 ４ 遅延貯水槽が、樹脂破片を充填した貯水槽で
あることを特徴とする特許請求の範囲第１項に記
載の有害金属含有水の処理装置。[Scope of Claims] 1. A delay storage tank having an inlet and an outlet for harmful metal-containing water discharged from a processing section and providing a predetermined time delay between the inflow and outflow of the harmful metal-containing water; An ion exchange means for passing water containing harmful metal ions flowing out from a water storage tank and ion-exchanging and adsorbing the harmful metal ions during the passage, and a water storage tank for storing water that has passed through the ion exchange means. A treatment device for water containing harmful metals, comprising a water supply means for forming a circulation path for supplying water from a water storage tank to the processing section. 2. The apparatus for treating harmful metal-containing water according to claim 1, wherein the delay water storage tank is composed of a long pipe. 3. The apparatus for treating harmful metal-containing water according to claim 1, wherein the delay water tank is a water tank in which lateral flow is blocked by a plurality of partition plates. 4. The apparatus for treating harmful metal-containing water according to claim 1, wherein the delay water tank is a water tank filled with resin fragments.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4350983A JPS59169592A (en) | 1983-03-15 | 1983-03-15 | Apparatus for treatment of water containing noxious metal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4350983A JPS59169592A (en) | 1983-03-15 | 1983-03-15 | Apparatus for treatment of water containing noxious metal |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59169592A JPS59169592A (en) | 1984-09-25 |
| JPH0417713B2 true JPH0417713B2 (en) | 1992-03-26 |
Family
ID=12665700
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4350983A Granted JPS59169592A (en) | 1983-03-15 | 1983-03-15 | Apparatus for treatment of water containing noxious metal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59169592A (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000334449A (en) * | 1999-05-27 | 2000-12-05 | Miura Co Ltd | Pure water production device and operation therefor |
| JP5086123B2 (en) * | 2008-02-15 | 2012-11-28 | 株式会社ディスコ | Processing waste liquid treatment equipment |
| JP5086124B2 (en) * | 2008-02-19 | 2012-11-28 | 株式会社ディスコ | Processing waste liquid treatment equipment |
| JP5086125B2 (en) * | 2008-02-19 | 2012-11-28 | 株式会社ディスコ | Processing waste liquid treatment equipment |
| JP5149035B2 (en) * | 2008-02-28 | 2013-02-20 | 株式会社ディスコ | Processing waste liquid treatment equipment |
| GB2547727B (en) * | 2016-02-29 | 2022-05-04 | Gold Standard Phantoms Ltd | Perfusion phantom |
-
1983
- 1983-03-15 JP JP4350983A patent/JPS59169592A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59169592A (en) | 1984-09-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3575859B2 (en) | Semiconductor substrate surface treatment method and surface treatment device | |
| JP2000190223A (en) | Grinding waste liquid reutilizing method and its device in semiconductor manufacturing | |
| JP2003234320A (en) | Method, chemical liquid, and device for cleaning substrate, and semiconductor device | |
| JPH0684875A (en) | Method and apparatus for reduction of fine- particle concentration in working fluid | |
| JPH0417713B2 (en) | ||
| JPH0225030A (en) | Wet chemical surfa ce treatment of semiconductor wafer | |
| US4935064A (en) | Iodine sterilization of deionized water in semiconductor processing | |
| Wu et al. | Process-to-process recycling of high-purity water from semiconductor wafer backgrinding wastes | |
| JP2021087911A (en) | Ion exchange unit and exchange method of ion exchange resin | |
| JPS62140423A (en) | Manufacturing equipment for semiconductor integrated circuit device | |
| US6907891B2 (en) | Radioactive substance decontamination method and apparatus | |
| US6116986A (en) | Drainage structure in polishing plant and method of polishing using structure | |
| JP6246537B2 (en) | Sampling mechanism | |
| JP7466999B2 (en) | Pure Water Generator | |
| JP6360441B2 (en) | Water storage tank | |
| JPH04162627A (en) | Treatment apparatus by chemical liquid | |
| CN113767071B (en) | Apparatus for treating washing water for semiconductor manufacturing/liquid crystal manufacturing and electronic parts, and method for treating washing water for semiconductor manufacturing/liquid crystal manufacturing and electronic parts | |
| JP7337442B2 (en) | Machining fluid circulation system | |
| JP6328912B2 (en) | Pure water purification equipment | |
| JP2022186379A (en) | Cleaning device | |
| JPH0631267A (en) | Removing filter for heavy metal in chemical liquid | |
| JPH04286328A (en) | Manufacture of high efficiency eilter for removing heavy metal contained in hf chemical solution | |
| KR0174986B1 (en) | Liquid Circulation System of Semiconductor Process | |
| JP2021030106A (en) | Processing liquid circulation device | |
| JPH03102827A (en) | Etching method for hf chemical |