JPH04175257A - Voltage-nonlinear resistance ceramic composition - Google Patents
Voltage-nonlinear resistance ceramic compositionInfo
- Publication number
- JPH04175257A JPH04175257A JP2301964A JP30196490A JPH04175257A JP H04175257 A JPH04175257 A JP H04175257A JP 2301964 A JP2301964 A JP 2301964A JP 30196490 A JP30196490 A JP 30196490A JP H04175257 A JPH04175257 A JP H04175257A
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- mol
- ceramic composition
- nonlinear resistance
- resistance ceramic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 12
- 239000000919 ceramic Substances 0.000 title claims abstract description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 22
- 239000011787 zinc oxide Substances 0.000 claims abstract description 11
- 229910052692 Dysprosium Inorganic materials 0.000 claims abstract 3
- 229910052691 Erbium Inorganic materials 0.000 claims abstract 3
- 229910052769 Ytterbium Inorganic materials 0.000 claims abstract 3
- 229910052797 bismuth Inorganic materials 0.000 claims abstract 3
- 229910052719 titanium Inorganic materials 0.000 claims abstract 3
- 239000010936 titanium Substances 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims 1
- 229910017052 cobalt Inorganic materials 0.000 claims 1
- 239000010941 cobalt Substances 0.000 claims 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 1
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 claims 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 claims 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 claims 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract description 7
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 abstract description 6
- NLQFUUYNQFMIJW-UHFFFAOYSA-N dysprosium(III) oxide Inorganic materials O=[Dy]O[Dy]=O NLQFUUYNQFMIJW-UHFFFAOYSA-N 0.000 abstract description 4
- UPWOEMHINGJHOB-UHFFFAOYSA-N oxo(oxocobaltiooxy)cobalt Chemical compound O=[Co]O[Co]=O UPWOEMHINGJHOB-UHFFFAOYSA-N 0.000 abstract description 4
- FIXNOXLJNSSSLJ-UHFFFAOYSA-N ytterbium(III) oxide Inorganic materials O=[Yb]O[Yb]=O FIXNOXLJNSSSLJ-UHFFFAOYSA-N 0.000 abstract description 4
- VQCBHWLJZDBHOS-UHFFFAOYSA-N erbium(III) oxide Inorganic materials O=[Er]O[Er]=O VQCBHWLJZDBHOS-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052748 manganese Inorganic materials 0.000 abstract 2
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 abstract 2
- 238000010521 absorption reaction Methods 0.000 abstract 1
- 230000006641 stabilisation Effects 0.000 abstract 1
- 238000011105 stabilization Methods 0.000 abstract 1
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 10
- 239000011230 binding agent Substances 0.000 description 2
- 229910000416 bismuth oxide Inorganic materials 0.000 description 2
- 229910000428 cobalt oxide Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005469 granulation Methods 0.000 description 2
- 230000003179 granulation Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 241000405217 Viola <butterfly> Species 0.000 description 1
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 1
- 229910003440 dysprosium oxide Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- UZLYXNNZYFBAQO-UHFFFAOYSA-N oxygen(2-);ytterbium(3+) Chemical compound [O-2].[O-2].[O-2].[Yb+3].[Yb+3] UZLYXNNZYFBAQO-UHFFFAOYSA-N 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 229910003454 ytterbium oxide Inorganic materials 0.000 description 1
- 229940075624 ytterbium oxide Drugs 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Thermistors And Varistors (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、各種電子機器などの回路電圧の安定化やサー
ジ及びノイズ吸収などに適用される電圧非直線性抵抗体
磁器組成物に関するものであり、特に低電圧回路で用い
られる低電圧用非直線性抵抗器として利用されるもので
ある。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a voltage nonlinear resistor ceramic composition that is applied to stabilizing circuit voltage and absorbing surges and noise in various electronic devices, etc. In particular, it is used as a low-voltage nonlinear resistor used in low-voltage circuits.
従来の技術
電圧非直線性抵抗器の代表的なものとして、酸化亜鉛（
ＺｎＯ）を主成分とするＺｎＯバリスタが一般的に知ら
れている。このＺｎＯバリスタは、電圧非直線性が良く
、サージ電流耐量が大きいなどの特徴を有するものであ
る。A typical conventional voltage nonlinear resistor is zinc oxide (
ZnO varistors whose main component is ZnO are generally known. This ZnO varistor has characteristics such as good voltage nonlinearity and large surge current withstand capacity.
その製造方法は、主成分のＺｎＯにＢ １２０３゜ＣＯ
２Ｏ３，ＭｎＯ２，Ｔ ｉ ０２などの゛副成分を微量
添加し、有機バインダなどとともに均一混合を行った後
、通常スプレードライヤーなどにより造粒を行い、その
粉体を所定の形状に成形し、１０００〜１３５０℃で焼
成するものである。上記の副成分の種類及び比率により
、任意のバリスタ電圧を得ることができるものである。The manufacturing method is to add B 1203°CO to the main component ZnO.
After adding a small amount of subcomponents such as 2O3, MnO2, TiO2, etc. and uniformly mixing them with an organic binder etc., granulation is usually performed using a spray dryer, etc., and the powder is molded into a predetermined shape. It is fired at ~1350°C. Any desired varistor voltage can be obtained depending on the types and ratios of the above-mentioned subcomponents.
そしてバリスタ電圧の低い（６０Ｖ以下）低電圧用バリ
スタの場合には、一般的にＴｉ（ｈを副成分として用い
る場合が多い。In the case of a low-voltage varistor with a low varistor voltage (60 V or less), Ti (h) is generally used as a subcomponent in many cases.
発明が解決しようとする課題
しかし、従来のＴ ｉ ０２を用いた磁器組成の場合、
サージ電流耐量が小さ（、サージ電流耐量を確保するに
は素子径を太き（しなければならないという課題を有し
ていた。Problems to be Solved by the Invention However, in the case of a porcelain composition using conventional T i 02,
The problem was that the surge current withstand capacity was small, and the element diameter had to be increased to ensure the surge current capacity.
本発明は上記従来の課題を解決するもので、サージ電流
耐量に優れたバリスタ電圧６０Ｖ以下の低電圧用電圧非
直線性抵抗体磁器組成物を提供することを目的とするも
のである。The present invention solves the above-mentioned conventional problems, and aims to provide a voltage nonlinear resistor ceramic composition for low voltages with a varistor voltage of 60 V or less and excellent surge current resistance.
課題を解決するための手段
上記課題を解決するために本発明の電圧非直線性抵抗体
磁器組成物は、ＺｎＯ，Ｂ １２０３゜ＣＯ２Ｏ３，Ｍ
ｎＯ２，Ｔ ｉ ０２からなる組成に、Ｄｙ２Ｏ３，Ｅ
ｒ２０３．Ｙｂ２Ｏ３のうち少なくとも１種を０．０
１〜１．００モル％含有するものである。Means for Solving the Problems In order to solve the above problems, the voltage nonlinear resistor ceramic composition of the present invention is composed of ZnO,B 1203°CO2O3,M
In the composition consisting of nO2, T i 02, Dy2O3, E
r203. 0.0 of at least one of Yb2O3
It contains 1 to 1.00 mol%.
作用
本発明によれば、ＺｎＯ，Ｂ １２０３．Ｃｏ２Ｏ３゜
ＭｎＯ２，ＴｉＯ２からなる組成に、Ｄ’Ｓ’２０３゜
Ｅ ｒ２０３．Ｙｂ２Ｏ３のうち少なくとも１種を０．
０１〜１．００モル％含有することにより、サージ電流
耐量が向上し、素子の小形化が図られることとなる。Effect According to the invention, ZnO,B 1203. In the composition consisting of Co2O3°MnO2, TiO2, D'S'203°E r203. At least one of Yb2O3 is added to 0.
By containing 01 to 1.00 mol %, the surge current resistance is improved and the device can be made smaller.
実施例 以下、本発明を実施例にもとづき説明する。Example Hereinafter, the present invention will be explained based on examples.
まず、主原料の酸化亜鉛（Ｚｎ○）に副成分として酸化
ビスマス（Ｂ Ｉ２０３） 、酸化コバルト（ＣＯ２０
３）、酸化マンガン（ＭｎＯ２）、酸化チタン（ＴｉＯ
２）、酸化ジスプロシウム（Ｄｙ２（ｈ）、酸化エルビ
ウム（Ｅ ｒ２Ｃｈ）、酸化イッテルビウム（Ｙｂ２０
３）をそれぞれ下記の第１表に示す比率で配合する。そ
して、ボールミルを用いて２４時時間式混合・粉砕を行
った。この原料に有機バインダを加え、スプレードライ
ヤーで造粒を行い、１０００ ｋｇ ／ ｃＩＩｉの圧
力で直径１３ｍ、厚み１．３ｍの大きさに成形を行った
。First, zinc oxide (Zn○) is the main raw material, and bismuth oxide (BI203) and cobalt oxide (CO20) are added as subcomponents.
3), manganese oxide (MnO2), titanium oxide (TiO
2), dysprosium oxide (Dy2(h), erbium oxide (E r2Ch), ytterbium oxide (Yb20
3) are blended in the ratios shown in Table 1 below. Then, 24-hour mixing and pulverization was performed using a ball mill. An organic binder was added to this raw material, granulation was performed using a spray dryer, and molding was performed at a pressure of 1000 kg/cIIi to a size of 13 m in diameter and 1.3 m in thickness.
この成形体を１３００℃の温度で３時間焼成し、焼結体
を得た。この焼結体の両手面に銀電極を４５０〜８５０
℃で焼き付けて設け、その電極部にリード線を半田付け
し、熱硬化性樹脂でコーティングした。This molded body was fired at a temperature of 1300° C. for 3 hours to obtain a sintered body. Silver electrodes with a thickness of 450 to 850
The electrodes were baked at ℃, lead wires were soldered to the electrodes, and the electrodes were coated with thermosetting resin.
以上のようにして得られた試料について、ノ（リスク電
圧（ｖｌ、＾／ｍ）、電圧非直線性係数−（α）を測定
した。その結果を第１表に併せて示す。第１表で、Ｖ’
１ｌｌＡ／−は、１ ｍ Ａの電流を流した時の素子厚
み１■当りの端子間電圧値を示す。また、αは１ｍＡ及
び１００μＡの各電流を流した時のバリスタ電圧から下
記の式により算出した。For the sample obtained as above, the risk voltage (vl, ^/m) and voltage nonlinearity coefficient -(α) were measured.The results are also shown in Table 1.Table 1 So, V'
1llA/- indicates the inter-terminal voltage value per 1 inch of element thickness when a current of 1 mA is applied. Further, α was calculated from the varistor voltage when each current of 1 mA and 100 μA was applied using the following formula.
但し、Ｉ＋、’Ｌ：測定電流
Ｖｌ、Ｖ２： Ｉ、、Ｉ２におけるパリ、ｌｔ圧また、
各試料にＪＥＣに規定される８／２０μｓの標準波形で
２０００Ａのサージ電流を２回印加し、バリスタ電圧を
測定した。その際のバリスタ電圧（Ｖｌ−Ａ）と初期値
の変化率（ΔＶ １１１Ａ）を第１表に示す。However, I+, 'L: Measured current Vl, V2: Paris, lt pressure at I, I2,
A surge current of 2000 A was applied twice to each sample with a standard waveform of 8/20 μs specified by JEC, and the varistor voltage was measured. Table 1 shows the varistor voltage (Vl-A) and the rate of change of the initial value (ΔV 111A) at that time.
（ｋＡＴ今り
第１表の結果から、Ｂｉ２Ｏ３が０．０５モル％より少
ない場合はＶ１ｍ＾が太き（、またΔＶＩ＋ｓＡも大き
くなる。また、Ｂｉ２Ｏ３が３．００モル％を超えると
αが小さくなり、ΔＶ１ｍＡも大きくなる。(From the results in kAT Imari Table 1, when Bi2O3 is less than 0.05 mol%, V1m^ becomes thick (and ΔVI+sA also becomes large. Also, when Bi2O3 exceeds 3.00 mol%, α becomes small. Therefore, ΔV1mA also increases.
さらに、ＣＯ２Ｏ３，ＭｎＯ２が０．０５モル％未満や
３．００モル％を超える場合には、αが低下し、ΔＶ１
ｍ＾も太き（なる。そして、Ｔ ｉ ０２が０．１０モ
ル％未１のときは、Ｖｌ＋ｍＡ＜”ｌ１１ｍが６０ Ｖ
以上となり、２．０モル％を超えるとαか低下し、ΔＶ
ｌ＋ｓ＾も大きくなる。Furthermore, when CO2O3 and MnO2 are less than 0.05 mol% or more than 3.00 mol%, α decreases and ΔV1
m^ is also thick (becomes. And when T i 02 is 0.10 mol% less than 1, Vl+mA<"l11m is 60 V
If it exceeds 2.0 mol%, α decreases, and ΔV
l+s^ also increases.
また、Ｄｙ２Ｏ３，Ｅ ｒ２０３．Ｙｂ２Ｏ３が０．０
１モル％未満ではΔＶＩｍＡ大きくなり、１．００モル
％を超える場合には、ＶＩｏｌＡ／’ｍｎｌが上昇し、
６０Ｖ以上となる。Also, Dy2O3,E r203. Yb2O3 is 0.0
If it is less than 1 mol%, ΔVImA increases, and if it exceeds 1.00 mol%, VIolA/'mnl increases,
It becomes 60V or more.
なお、副成分として、さらに５ｂ２０３゜Ｃｒ２Ｏ３，
Ｎｉｐ、５ｉ０２．Ａｉ！２０３゜８２０５などを加え
ることにより、非直線性を一層改善することができる。In addition, as a subcomponent, 5b203゜Cr2O3,
Nip, 5i02. Ai! By adding 203°8205, etc., nonlinearity can be further improved.
発明の効果
以上、このようにＤ ｙ２ｃｈ、 Ｅ ｒ２０３゜Ｙｂ
２Ｏ３のうち少なくとも１種を０．０１〜１．００モル
％含有することにより、サージ電流耐量に優れたものと
なり、小形の低電圧用電圧非直線性抵抗器を提供するこ
とができる。Beyond the effects of the invention, D y2ch, E r203°Yb
By containing 0.01 to 1.00 mol % of at least one of 2O3, it becomes possible to provide an excellent surge current withstand capacity and a small-sized voltage nonlinear resistor for low voltage.
Claims (1)
マス，コバルト，マンガン，チタンをそれぞれＢｉ＿２
Ｏ＿３，Ｃｏ＿２Ｏ＿３，ＭｎＯ＿２，ＴｉＯ＿２に換
算して、 Ｂｉ＿２Ｏ＿３ ０．０５〜３．００モル％Ｃｏ＿２Ｏ
＿３ ０．０５〜３．００モル％ＭｎＯ＿２ ０．０５
〜３．００モル％ ＴｉＯ＿２ ０．１０〜２．００モル％ からなる組成に、ジスプロシウム，エルビウム，イッテ
ルビウムのうち少なくとも１種をそれぞれＤｙ＿２Ｏ＿
３，Ｅｒ＿２Ｏ＿３，Ｙｂ＿２Ｏ＿３に換算して、０．
０１〜１．００モル％含有することを特徴とする電圧非
直線性抵抗体磁器組成物。[Scope of Claims] Zinc oxide is the main component, and at least bismuth, cobalt, manganese, and titanium are each Bi_2 as subcomponents.
Bi_2O_3 0.05-3.00 mol% Co_2O in terms of O_3, Co_2O_3, MnO_2, TiO_2
_3 0.05-3.00 mol% MnO_2 0.05
~3.00 mol% TiO_2 0.10~2.00 mol%, and at least one of dysprosium, erbium, and ytterbium is added to each Dy_2O_
3, Er_2O_3, Yb_2O_3, 0.
A voltage nonlinear resistor ceramic composition characterized by containing 01 to 1.00 mol%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2301964A JPH04175257A (en) | 1990-11-06 | 1990-11-06 | Voltage-nonlinear resistance ceramic composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2301964A JPH04175257A (en) | 1990-11-06 | 1990-11-06 | Voltage-nonlinear resistance ceramic composition |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04175257A true JPH04175257A (en) | 1992-06-23 |
Family
ID=17903247
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2301964A Pending JPH04175257A (en) | 1990-11-06 | 1990-11-06 | Voltage-nonlinear resistance ceramic composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04175257A (en) |
-
1990
- 1990-11-06 JP JP2301964A patent/JPH04175257A/en active Pending
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