JPH0417206A - Wiring paste for aluminum nitride multilayered substrate - Google Patents
Wiring paste for aluminum nitride multilayered substrateInfo
- Publication number
- JPH0417206A JPH0417206A JP11957890A JP11957890A JPH0417206A JP H0417206 A JPH0417206 A JP H0417206A JP 11957890 A JP11957890 A JP 11957890A JP 11957890 A JP11957890 A JP 11957890A JP H0417206 A JPH0417206 A JP H0417206A
- Authority
- JP
- Japan
- Prior art keywords
- aln
- aluminum nitride
- aqn
- paste
- wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 title claims abstract description 24
- 239000000758 substrate Substances 0.000 title claims abstract description 23
- 239000000203 mixture Substances 0.000 claims abstract description 12
- 239000000126 substance Substances 0.000 claims abstract description 6
- 238000010304 firing Methods 0.000 claims description 8
- 238000010030 laminating Methods 0.000 claims description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract description 13
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 239000000853 adhesive Substances 0.000 abstract 2
- 230000001070 adhesive effect Effects 0.000 abstract 2
- 239000000463 material Substances 0.000 description 5
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 4
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 2
- 238000007606 doctor blade method Methods 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
- H05K1/092—Dispersed materials, e.g. conductive pastes or inks
Landscapes
- Conductive Materials (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、窒化アルミニウム多層基板の配線用ペースト
に関する。さらに、具体的にいうと、ＩＣ（集積回路）
パッケージやパーワーダイオード等を実装するための基
板として利用されている窒化アルミニウム多層基板に配
線を施すためのペーストに関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a wiring paste for aluminum nitride multilayer substrates. Furthermore, to be more specific, IC (integrated circuit)
This invention relates to a paste for wiring an aluminum nitride multilayer substrate used as a substrate for mounting packages, power diodes, etc.
［背景技術］
半導体デバイスの高密度化、高速化及び高出力化に伴う
発熱量の増大に対応させるため、基板材料としては、放
熱性に優れた材料が要求されている。[Background Art] In order to cope with the increase in heat generation due to higher density, higher speed, and higher output of semiconductor devices, materials with excellent heat dissipation properties are required as substrate materials.
放熱性に優れた基板材料としては、従来より利用されて
いるアルミナ（ＡＱ２０．）に替わって、窒化アルミニ
ウム（ＡＱＮ）が注目されている。このＡＱＮを用いて
高密度実装が可能な多層基板を製作する方法としては、
従来では、ＮＱＮグリーンシートの表面にタングステン
（Ｗ）のペーストを所定パターンに印刷し、この後、Ａ
ＱＮグリーンシートを積層し、積層されたＡ１２Ｎグリ
ーンシートとタングステンペーストを同時焼成し、窒化
アルミニウム多層基板に金属の導電路を形成して、いた
。As a substrate material with excellent heat dissipation properties, aluminum nitride (AQN) is attracting attention in place of the conventionally used alumina (AQ20.). A method for manufacturing a multilayer board that can be mounted at high density using this AQN is as follows.
Conventionally, tungsten (W) paste is printed in a predetermined pattern on the surface of an NQN green sheet, and then A
QN green sheets were stacked, and the stacked A12N green sheets and tungsten paste were co-fired to form metal conductive paths on the aluminum nitride multilayer substrate.
［発明か解決しようとする課題］
しかしなから、従来のように、タングステンペーストを
用いて導電路を配線した窒化アルミニウム多層基板では
、多層基板を構成するＡＱＮ層と導電路との接合強度が
充分でなく、製品としての信頼性に欠けることがあった
。[Problem to be solved by the invention] However, in conventional aluminum nitride multilayer substrates in which conductive paths are wired using tungsten paste, the bonding strength between the AQN layer and the conductive paths constituting the multilayer substrate is insufficient. However, there were times when the product lacked reliability.
本発明は、叙上の従来例の欠点に鑑みてなされたもので
あり、その目的とするところは、窒化アルミニウム多層
基板のＡＱＮ層との接合強度が高い導電路を形成するこ
とかできる配線用ペーストを提供することにある。The present invention has been made in view of the drawbacks of the conventional examples described above, and its purpose is to provide a wiring device that can form a conductive path with high bonding strength to the AQN layer of an aluminum nitride multilayer substrate. The goal is to provide a paste.
［課題を解決するための手段］
本発明の窒化アルミニウム多層基板の配線用ペーストは
、ＡＱＮのグリーンシートを積層し、焼成して形成され
る窒化アルミニウム多層基板の層間に導電路を形成する
ための配線用ペーストであって、ＡＱＮ、 Ｔｉｅｓ及
び有機物質の混合物からなり、上記混合物の組成のうち
、ＡＱＮ層（ＡＱＮ十ＴｉＯ□）が５重量％以上４０重
量％、以下であることを特徴としている。[Means for Solving the Problems] The wiring paste for an aluminum nitride multilayer board of the present invention is a paste for forming conductive paths between layers of an aluminum nitride multilayer board formed by laminating and firing AQN green sheets. The wiring paste is composed of a mixture of AQN, Ties, and an organic substance, and is characterized in that the AQN layer (AQN + TiO□) accounts for 5% by weight or more and 40% by weight or less of the composition of the mixture. .
［作用コ
上記組成の配線用ペーストをＡＱＮのグリーンシートに
印刷して導電路を形成した後、各グリーンシートを積層
し、グリーンシートと配線用ペーストを同時焼成して窒
化アルミニウム多層基板を製作すると、配線用ペースト
中のＡＱＮとＴｉＯ□が焼成時に反応し、高導電性を有
する窒化チタン（ＴｉＮ）が生成される。従って、窒化
アルミニウム多層基板には、ＴｉＮからなる高導電性の
導電路が形成される。[Operation: After printing the wiring paste with the above composition on AQN green sheets to form conductive paths, the green sheets are laminated and the green sheets and wiring paste are co-fired to produce an aluminum nitride multilayer board. , AQN and TiO□ in the wiring paste react during firing to produce highly conductive titanium nitride (TiN). Therefore, highly conductive conductive paths made of TiN are formed in the aluminum nitride multilayer substrate.
しかも、配線用ペーストには、基板材料と同じＡＱＮが
含まれており、また、配線用ペースト中の７１０２とグ
リーンシートのＡＱＮの間でも焼成時に反応してＴｉＮ
を生成するので、導電路と多層基板のＡＱＮ層との間で
高い接合強度を得ることができる。Moreover, the wiring paste contains the same AQN as the board material, and the 7102 in the wiring paste and the AQN of the green sheet react during firing to form TiN.
Therefore, high bonding strength can be obtained between the conductive path and the AQN layer of the multilayer substrate.
なお、ＡＱ Ｎ／ （ＡＱ Ｎ 十Ｔ ｉＯ□）が５重
量％未満、あるいは４０重量％を超過している場合には
、充分な導電性を得ることが困難である。Note that if AQ N/(AQ N + TiO□) is less than 5% by weight or more than 40% by weight, it is difficult to obtain sufficient conductivity.
［実施例］ 以下、本発明の詳細な説明する。[Example] The present invention will be explained in detail below.
本発明の配線用ペーストは、ＡｌＮ，ＴｉＯ２及びポリ
ビニルブチラールや有機溶媒等の有機物質からなってお
り、ＡＱ Ｎ／ （ＡＱ Ｎ ＋ Ｔ ｉｏｇ）が５〜
４０重量％となるように調製されている。この配線用ペ
ーストは、窒化アルミニウム多層基板に用いられるもの
であり、ドクターブレード法等によってシート状に成形
されたＡＱＮのグリーンシートの表面に配線用ペースト
を所定のパターンで印刷して導電路を形成し、このＡＱ
Ｎグリーンシートを複数枚積層して互いに圧着させた後
、Ａｆ２Ｎグリーンシートの積層体と配線用ペーストと
を同時焼成し、窒化アルミニウム多層基板にＴｉＮから
なる高導電性の導電路を形成する。すなわち、焼成時に
、配線用ペースト内のＡＱＮとＴｉ０ａとが反応してＴ
ｉＮの導電路が形成される。また、配線用ペーストのＴ
ｉｏ２とグリーンシートのＡＱＮとが反応してＴｉＮ
を生成されるので、導電路とＡＱＮ層との間で結合が得
られ、しかも配線用ペーストにはグリーンシートと同じ
ＡＱＮが含まれているので、焼成時に導電路のＡＱＮの
領域とＡＱＮ層との間で結晶学的な連続性が得られ、焼
成された導電路は、窒化アルミニウム多層基板のＡＱＮ
層に対して大きな強度で接合される。The wiring paste of the present invention is made of AlN, TiO2, and organic substances such as polyvinyl butyral and organic solvents, and has an AQ N/(AQ N + Tiog) of 5 to 5.
The content is adjusted to 40% by weight. This wiring paste is used for aluminum nitride multilayer boards, and conductive paths are formed by printing the wiring paste in a predetermined pattern on the surface of an AQN green sheet that is formed into a sheet shape using a doctor blade method etc. And this AQ
After stacking a plurality of N green sheets and pressing them together, the stack of Af2N green sheets and wiring paste are co-fired to form highly conductive conductive paths made of TiN on the aluminum nitride multilayer substrate. That is, during firing, AQN in the wiring paste and Ti0a react and T
An iN conductive path is formed. Also, the wiring paste T
io2 and AQN of the green sheet react to form TiN
is generated, so a bond can be obtained between the conductive path and the AQN layer, and since the wiring paste contains the same AQN as the green sheet, the AQN area of the conductive path and the AQN layer are bonded during firing. Crystallographic continuity is obtained between the AQN and sintered conductive paths of the aluminum nitride multilayer substrate.
It is bonded to the layers with great strength.
次に、具体的な数値と共に本発明の一実施例を添付図に
従って説明する。Next, an embodiment of the present invention will be described with reference to the accompanying drawings along with specific numerical values.
まず、ＡＱＮ原料に、焼結助剤としてＹ２Ｏ３を３重量
％の割合で添加し、さらにブチラール樹脂を８重量％添
加し、これらをよく混合した後、これをドクターブレー
ド法等によってシート成形し、絞Ｎグリーンシートを用
意した。次に、ＡＱＮ粉末とＴｉＯ□粉末ヲ、 ソＦＬ
ソｔＬＡＱＮ／ （ＡＱＮ層 Ｔｉ０２）が５重量％
、２０重量％、４０重量％となるように混合し、各混合
粉末に対してポリビニルブチラールを５重量％と有機溶
媒を加え、３種の異なる配線用ペーストを用意した。First, 3% by weight of Y2O3 as a sintering aid is added to the AQN raw material, and 8% by weight of butyral resin is added to the AQN raw material. After mixing these thoroughly, this is formed into a sheet by a doctor blade method etc. A Shibori N green sheet was prepared. Next, AQN powder and TiO□ powder, SOFL
SotLAQN/ (AQN layer Ti02) is 5% by weight
, 20% by weight, and 40% by weight, and 5% by weight of polyvinyl butyral and an organic solvent were added to each mixed powder to prepare three different wiring pastes.
次に、用意した３種の配線用ペーストのうちから１種を
選択し、縦横各３０ｍｍにカットした厚さ０．１ｍｍの
ＡＱＮグリーンシー）１ａの上面に当該内部配線用ペー
スト２を第１図（ａ）に示すようなパターンＣＩＣ２，
Ｄ ＋Ｄ ｓに印刷した後、乾燥させた。Next, select one type of wiring paste from among the three types of wiring paste prepared and apply the internal wiring paste 2 on the top surface of AQN Green Sea) 1a with a thickness of 0.1 mm cut into 30 mm lengthwise and widthwise pieces as shown in Figure 1. Pattern CIC2 as shown in (a),
After printing on D+Ds, it was dried.
次に、同じサイズのＡＱＮグリーンシート１ｂに、第１
図（ｂ）に示すようなスルーホール３ａ、３ｂ。Next, on the AQN green sheet 1b of the same size,
Through holes 3a and 3b as shown in figure (b).
３ｃ、３ｄを形成し、このＡｆ２Ｎグリーンシート１ｂ
をＡＱＮグリーンシート１ａのパターン印刷面に重ねて
圧着させた。さらに、この積層体のヌル−ホール３ａ、
３ｂ、３ｃ、３ｄの存在する側の外面に、第１図（ｃ）
に示すパターンＡ １Ａ ａ、 Ｂ ｒ ８２で当該配
線用ペースト２を印刷し、乾燥させた。3c and 3d, and this Af2N green sheet 1b
was layered on the pattern-printed surface of the AQN green sheet 1a and pressure-bonded. Furthermore, the null hole 3a of this laminate,
1(c) on the outer surface of the side where 3b, 3c, and 3d exist.
The wiring paste 2 was printed with a pattern A 1A a, B r 82 shown in , and dried.
同様にして、他の２種の配線用ペーストを用いて同じ構
成の積層体を得た。さらに、これらの３種の積層体を窒
素雰囲気中において８５０℃で、２時間脱脂した後、同
じく窒素雰囲気中で１８００℃、５時間の焼成を行なっ
た。Similarly, laminates with the same configuration were obtained using two other types of wiring pastes. Further, these three types of laminates were degreased at 850° C. for 2 hours in a nitrogen atmosphere, and then fired at 1800° C. for 5 hours in the same nitrogen atmosphere.
このようにして得られた窒化アルミニウム多層基板４に
おいては、内部のＡＱＮ層５ａ、５ｂ間に第１図（ａ）
のようなパターンＣＩｃ ２． Ｄ ＩＤ ２の導電路
Ｅｔａ、６ｂが形成され、スルーホール３ａ。In the aluminum nitride multilayer substrate 4 obtained in this way, there is a gap between the internal AQN layers 5a and 5b as shown in FIG. 1(a).
Pattern CIc like 2. A conductive path Eta, 6b of D ID 2 is formed, and a through hole 3a.
３ｂ、３ｃ、３ｄを有する順Ｎ層５ｂの外表面に第１図
（ｃ）のようなパターンＡ ＩＡ ２． Ｂ ＩＢ ２
の導電路７ａ、７ｂが形成されており、スルーホール３
ａを通して導電路６ａの端部Ｃ２と導電路７ａの端部Ａ
２とが接続されており、スルーホール３ｂ ＋ ３ ｃ
、３ ｄから導電路６ａの端部Ｃ１、導電路８ｂの端
部り、及びＤ２がそれぞれ露出させられている。A pattern AIA2 as shown in FIG. 1(c) is formed on the outer surface of the sequential N layer 5b having layers 3b, 3c, and 3d. B IB 2
Conductive paths 7a and 7b are formed, and the through hole 3
a through the end C2 of the conductive path 6a and the end A of the conductive path 7a.
2 is connected, and through hole 3b + 3c
, 3d, the end C1 of the conductive path 6a, the end C1 of the conductive path 8b, and D2 are exposed, respectively.
第２図（ａ）に示す各点（導電路の端部）間で導通の有
無を調べたところ、いずれの窒化アルミニウム多層基板
４も、Ａ、−ＣＩ、ＢＩＢ２、Ｄ＋−Ｄ２間では金属に
等しい導電性を示し、上記各組成の内部配線用ペースト
２を印刷した部分は、焼成後には完全に導電層となって
いることがわかった。また、Ａ＋Ｂｔ、Ａ＋Ｄ１、Ｂ
、−Ｄ 、間では導電性は全くなく、配線用ペースト２
を印刷していない部分は、焼成後も絶縁層として有効に
働いていることがわかった。When examining the presence or absence of conduction between each point (end of the conductive path) shown in FIG. It was found that the areas printed with internal wiring paste 2 having the same conductivity and each composition described above became completely conductive layers after firing. Also, A+Bt, A+D1, B
, -D, there is no conductivity at all, and the wiring paste 2
It was found that the unprinted area still functioned effectively as an insulating layer even after firing.
一方、比較例として、ＡＱ Ｎ／ （ＡＱ Ｎ ＋ Ｔ
ｉＯ□）を３重量％及び５０重量％とじた配線用ペー
ストも作成したが、この場合は導電路で充分な導電性が
得られなかった。On the other hand, as a comparative example, AQ N/(AQ N + T
Wiring pastes containing 3% and 50% by weight of iO□) were also prepared, but in these cases sufficient conductivity could not be obtained in the conductive paths.
従って、上記実施例及び比較例より、本発明の配線用ペ
ーストは、ＡＱ Ｎ／ （ＡＱ Ｎ ＋ Ｔ １ｏ２）
が５重量％以上４０重量％以下の範囲で有効であること
が確証された。Therefore, from the above Examples and Comparative Examples, the wiring paste of the present invention has AQ N/(AQ N + T 1o2)
was confirmed to be effective in the range of 5% by weight or more and 40% by weight or less.
［発明の効果コ
本発明によれば、ＡＱＮ、 ＴｌＯ２及び有機物質から
なる配線用ペーストなＡｆ２Ｎのグリーンシートの上に
印刷した後、同時焼成すると、焼成時にＡＱＮとＴ ｉ
ｏ２が反応して高導電性を有するＴｉＮの導電路が生成
されるので、窒化アルミニウム多層基板に導電路を形成
することができる。また、導電路の出発物質の一部は基
板材料と同じＡＱＮであるので、導電路とＡｆ２Ｎ層の
結合が強く、しかも配線用ペーストのＴ ｉｏ２とグリ
ーンシートのＡＱＮも反応するので、導電路とＡＱＮ層
との間で高い接合強度を得ることができ、極めて信頼性
の高い窒化アルミニウム多層基板を得ることができる。[Effects of the Invention] According to the present invention, when printed on a green sheet of Af2N, which is a wiring paste made of AQN, TlO2, and an organic substance, and then fired simultaneously, AQN and Ti
Since the o2 reacts to produce a highly conductive TiN conductive path, it is possible to form a conductive path in an aluminum nitride multilayer substrate. In addition, since part of the starting material for the conductive path is AQN, which is the same as the substrate material, the bond between the conductive path and the Af2N layer is strong, and the Tio2 of the wiring paste and AQN of the green sheet also react, so the conductive path and High bonding strength can be obtained between the AQN layer and an extremely reliable aluminum nitride multilayer substrate.
第１図（ａ） （ｂ）は本発明の一実施例における窒化
アルミニウム多層基板を構成する２層のＡＱＮグリーン
シートとを示す平面図、第１図（Ｃ）は第１図（ｂ）の
ＡＱＮグリーンシートの表面に印刷される配線用ペース
トのパターンを示す図、第２図（ａ）は第１図（ａ）
（ｂ） （ｃ）の各グリーンシートを積層して形成され
た多層基板の平面図、第２図（ｂ）は第２図（ａ）のＩ
−Ｉ線断面図である。
ｌａ、ｌｂ・・・絞Ｎグリーンシート
２・・・配線用ペースト
３ａ、３ｂ、３ｃ、３ｄ・・−スルーホール４・・・窒
化アルミニウム多層基板
５ ａ 、 ５ ｂ−ＡｆｌＮ層
６ａ、６ｂ・・・導電路
７ａ、７ｂ・・・導電路FIGS. 1(a) and 1(b) are plan views showing two layers of AQN green sheets constituting an aluminum nitride multilayer substrate in one embodiment of the present invention, and FIG. 1(C) is a plan view of FIG. 1(b). A diagram showing the wiring paste pattern printed on the surface of the AQN green sheet, Figure 2 (a) is similar to Figure 1 (a)
(b) A plan view of a multilayer board formed by laminating each green sheet in (c), Figure 2(b) is the I of Figure 2(a)
- I is a sectional view taken along the line. la, lb...Aperture N green sheet 2...Wiring paste 3a, 3b, 3c, 3d...-Through hole 4...Aluminum nitride multilayer substrate 5a, 5b-AflN layer 6a, 6b... - Conductive path 7a, 7b... conductive path
Claims (1)
成して形成される窒化アルミニウム多層基板の層間に導
電路を形成するための配線用ペーストであって、 ＡｌＮ，ＴｉＯ＿２及び有機物質の混合物からなり、上
記混合物の組成のうち、ＡｌＮ／（ＡｌＮ＋ＴｉＯ＿２
）が５重量％以上４０重量％以下であることを特徴とす
る窒化アルミニウム多層基板の配線用ペースト。(1) A wiring paste for forming conductive paths between the layers of an aluminum nitride multilayer substrate formed by laminating and firing aluminum nitride green sheets, which is made of a mixture of AlN, TiO_2 and an organic substance, Among the compositions of the above mixture, AlN/(AlN+TiO_2
) is 5% by weight or more and 40% by weight or less, a wiring paste for an aluminum nitride multilayer board.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2119578A JP2734170B2 (en) | 1990-05-09 | 1990-05-09 | Aluminum nitride multilayer substrate wiring paste |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2119578A JP2734170B2 (en) | 1990-05-09 | 1990-05-09 | Aluminum nitride multilayer substrate wiring paste |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0417206A true JPH0417206A (en) | 1992-01-22 |
| JP2734170B2 JP2734170B2 (en) | 1998-03-30 |
Family
ID=14764821
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2119578A Expired - Fee Related JP2734170B2 (en) | 1990-05-09 | 1990-05-09 | Aluminum nitride multilayer substrate wiring paste |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2734170B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60158204A (en) * | 1984-01-30 | 1985-08-19 | Toho Titanium Co Ltd | Olefin polymerization catalyst component and catalyst |
| JPS60161404A (en) * | 1984-01-31 | 1985-08-23 | Toho Titanium Co Ltd | Catalytic component for polymerizing olefin |
| CN115838303A (en) * | 2023-02-22 | 2023-03-24 | 西安石油大学 | Silver paste for aluminum nitride ceramic |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6276596A (en) * | 1985-09-27 | 1987-04-08 | 日本電気株式会社 | Multilayer ceramic circuit substrate |
| JPS62197379A (en) * | 1986-02-20 | 1987-09-01 | 株式会社東芝 | Aluminum nitride substrate |
| JPH01260713A (en) * | 1988-04-08 | 1989-10-18 | Toshiba Corp | Metallized paste composition for nitride-based ceramic substrate |
-
1990
- 1990-05-09 JP JP2119578A patent/JP2734170B2/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6276596A (en) * | 1985-09-27 | 1987-04-08 | 日本電気株式会社 | Multilayer ceramic circuit substrate |
| JPS62197379A (en) * | 1986-02-20 | 1987-09-01 | 株式会社東芝 | Aluminum nitride substrate |
| JPH01260713A (en) * | 1988-04-08 | 1989-10-18 | Toshiba Corp | Metallized paste composition for nitride-based ceramic substrate |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60158204A (en) * | 1984-01-30 | 1985-08-19 | Toho Titanium Co Ltd | Olefin polymerization catalyst component and catalyst |
| JPS60161404A (en) * | 1984-01-31 | 1985-08-23 | Toho Titanium Co Ltd | Catalytic component for polymerizing olefin |
| CN115838303A (en) * | 2023-02-22 | 2023-03-24 | 西安石油大学 | Silver paste for aluminum nitride ceramic |
| CN115838303B (en) * | 2023-02-22 | 2023-04-28 | 西安石油大学 | Silver paste for aluminum nitride ceramics |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2734170B2 (en) | 1998-03-30 |
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