JPH04168743A - Life time measuring instrument - Google Patents
Life time measuring instrumentInfo
- Publication number
- JPH04168743A JPH04168743A JP29614190A JP29614190A JPH04168743A JP H04168743 A JPH04168743 A JP H04168743A JP 29614190 A JP29614190 A JP 29614190A JP 29614190 A JP29614190 A JP 29614190A JP H04168743 A JPH04168743 A JP H04168743A
- Authority
- JP
- Japan
- Prior art keywords
- carriers
- semiconductor substrate
- laser
- laser beam
- detector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 239000000969 carrier Substances 0.000 claims abstract description 14
- 238000005215 recombination Methods 0.000 claims abstract description 4
- 230000006798 recombination Effects 0.000 claims abstract description 4
- 230000003287 optical effect Effects 0.000 claims description 5
- 230000007423 decrease Effects 0.000 claims description 4
- 238000005259 measurement Methods 0.000 abstract description 5
- 230000035945 sensitivity Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Lasers (AREA)
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明はライフタイム測定器に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to a lifetime measuring device.
従来のこの種のライフタイム測定は、第３図に示すよう
にマイクロ波発生器１より発生したマイクロ波をサーキ
ュレータ−２を介して半導体基板上に照射し、又、キャ
リア励起用レーサーをパルス波にして半導体基板６上に
照射し、半導体基板Ｇ中のキャリアの変化を半導体基板
６からの反射波の出力変化として、検出器８で検出し、
計算機１０にライフタイムを算出する機構となっていた
。Conventional lifetime measurement of this type involves irradiating microwaves generated from a microwave generator 1 onto a semiconductor substrate via a circulator 2, as shown in FIG. irradiate onto the semiconductor substrate 6, and detect the change in carriers in the semiconductor substrate G as a change in the output of the reflected wave from the semiconductor substrate 6 with the detector 8,
The calculator 10 had a mechanism for calculating the lifetime.
上述した従来のライフタイム測定器は、レーザースポッ
ト径が固定で半導体基板支持ステージをコントロールす
るユニットおよび半導体基板上を観察する光学系を有し
ていないので、直接半導体基板製造工程中でライフタイ
ムを測定できなく、代用の素子パターンのない専用の半
導体基板で測定しなければならない為、直接に半導体素
子製造工程中の汚染状態をモニタできないという欠点が
あった。The conventional lifetime measurement device described above has a fixed laser spot diameter and does not have a unit to control the semiconductor substrate support stage or an optical system to observe the semiconductor substrate, so it is possible to measure the lifetime directly during the semiconductor substrate manufacturing process. This method has the disadvantage that it is not possible to directly monitor the contamination state during the semiconductor device manufacturing process because it cannot be measured and must be measured using a dedicated semiconductor substrate that does not have a substitute device pattern.
本発明のライフタイム測定器は、半導体基板中のキャリ
アを励起させるレーザーをパルス波としたレーザービー
ムスポットを、移動する支持ステージに裁置された半導
体基板の表面の一部に照射し、前記半導体基板中のキャ
リアを励起させてキャリアの再結合によるキャリア数の
減少に対応するマイクロ波の反射波強度変化を、前記半
導体基板の上面を観察する光学系によってライフタイム
を測定するライフタイム測定器において、前記レーザー
ビームスポットの径を制御するコントロールユニットを
有して構成されている。The lifetime measuring device of the present invention irradiates a part of the surface of a semiconductor substrate placed on a moving support stage with a laser beam spot made of a pulsed laser that excites carriers in the semiconductor substrate, and In a lifetime measuring instrument that excites carriers in the substrate and measures the lifetime by an optical system that observes the upper surface of the semiconductor substrate by changing the intensity of reflected microwave waves corresponding to a decrease in the number of carriers due to carrier recombination. , a control unit for controlling the diameter of the laser beam spot.
本発明について図面を参照して説明する。 The present invention will be explained with reference to the drawings.
第１図は本発明の一実施例の模式図である。FIG. 1 is a schematic diagram of an embodiment of the present invention.
第１図に示すようにマイクロ波をサーキュレータ−２を
介して半導体基板６上に照射し、又、キャリア励起用レ
ーザーをオシレーター５によりパルス波にして、可変倍
率レンズ１３の倍率に対応するレーザースポット径にレ
ーザースポット径コントローラ１５でしぼって半導体基
板上に照射する。As shown in FIG. 1, microwaves are irradiated onto the semiconductor substrate 6 through a circulator 2, and a carrier excitation laser is made into a pulse wave by an oscillator 5 to produce a laser spot corresponding to the magnification of the variable magnification lens 13. The laser spot diameter controller 15 narrows down the laser spot to a diameter and irradiates it onto the semiconductor substrate.
半導体基板６上のレーザーが照射された箇所のキャリア
が励起され、レーザー出力の０時に、キャリアの再結合
によりキャリア数が減少し、それに伴ない検波器８のマ
イクロ波反射波強度も減少する。Carriers on the semiconductor substrate 6 at a location irradiated with the laser are excited, and when the laser output is 0, the number of carriers decreases due to carrier recombination, and the microwave reflected wave intensity of the detector 8 decreases accordingly.
検波器８の出力とオシレータ５よりパルス波の基準波を
Ｐ ＣＤ （Ｐｈａｓｅ ５ｅｎｓｉｔｉｖｉｔｙ Ｄ
ｅｔｅｃｔｏｒ）１６に入力し、パルス波と同一周波数
のみを増幅し、計算機１０にてライフタイムを測定する
。The output of the detector 8 and the reference wave of the pulse wave from the oscillator 5 are
detector) 16, amplify only the same frequency as the pulse wave, and measure the lifetime using the calculator 10.
尚、測定までの一連の動作は、光学系のモニタ１４が第
２図に示すように位置合わせした後、ステージコントロ
ーラ１１により半導体基板６上を観察する光学系とレー
ザー元系の間隔だけ、半導体基板６支持ステージ７を（
１／１００）μｍの精度で移動させ、測定開始する。The series of operations up to the measurement is as follows: After the optical system monitor 14 is aligned as shown in FIG. The substrate 6 support stage 7 (
Move with an accuracy of 1/100) μm and start measurement.
以上説明したように本発明は、レーザービームスポット
径をコン１〜ロールするユニットと半導体基板支持ステ
ージをコントロールするユニットおよび半導体基板上を
観察する光学系を有することにより、半導体素子製造工
程中に測定する半導体素子パターンに合わせてレーザー
ビームスポット径をしぼり、その箇所のキャリアのみを
励起する事ができ半導体基板上の任意の半導体素子パタ
ーンでライフタイムが測定できるという効果がある。As explained above, the present invention has a unit that controls the diameter of the laser beam spot, a unit that controls the semiconductor substrate support stage, and an optical system that observes the top of the semiconductor substrate. The laser beam spot diameter can be narrowed down to match the semiconductor element pattern to be used, and only the carriers at that location can be excited, making it possible to measure the lifetime of any semiconductor element pattern on the semiconductor substrate.
第１図は本発明の一実施例の模式図、第２図は半導体基
板上を観察するモニタの画面図、第３図は従来のライフ
タイム測定器の一例の模式図である。
１・・・マイクロ波発生器、２・・・サーキュレータ、
３・・・導波管、４・・・レーザ発生器、５・・・オシ
レータ、６・・・半導体基板、７・・・半導体基板支持
ステージ、１０・・・計算機、１１・・・ステージコン
トローラ、１２・・・対物レンズ、１３・・・可変倍率
レンズ、１４・・・モニタ、１５・・・レーザービーム
スポット径コントローラ、１６・・・ＰＳＤ、１７・・
・モニタ画面、１８・・・半導体素子パターン、１つ・
・・レーザービームスポット。FIG. 1 is a schematic diagram of an embodiment of the present invention, FIG. 2 is a screen diagram of a monitor for observing a semiconductor substrate, and FIG. 3 is a schematic diagram of an example of a conventional lifetime measuring device. 1...Microwave generator, 2...Circulator,
3... Waveguide, 4... Laser generator, 5... Oscillator, 6... Semiconductor substrate, 7... Semiconductor substrate support stage, 10... Computer, 11... Stage controller , 12... Objective lens, 13... Variable magnification lens, 14... Monitor, 15... Laser beam spot diameter controller, 16... PSD, 17...
・Monitor screen, 18...semiconductor element pattern, 1・
...Laser beam spot.
Claims (1)
波としたレーザービームスポットを、移動する支持ステ
ージに裁置された半導体基板の表面の一部に照射し、前
記半導体基板中のキャリアを励起させてキャリアの再結
合によるキャリア数の減少に対応するマイクロ波の反射
波強度変化を、前記半導体基板の上面を観察する光学系
によってライフタイムを測定するライフタイム測定器に
おいて、前記レーザービームスポットの径を制御するコ
ントロールユニットを有することを特徴とするライフタ
イム測定器。A part of the surface of the semiconductor substrate placed on a moving support stage is irradiated with a laser beam spot made of a pulsed laser that excites carriers in the semiconductor substrate, and the carriers in the semiconductor substrate are excited to become carriers. The diameter of the laser beam spot is controlled in a lifetime measuring device that measures the lifetime of the microwave reflected wave intensity change corresponding to the decrease in the number of carriers due to recombination using an optical system that observes the upper surface of the semiconductor substrate. A lifetime measuring instrument characterized by having a control unit that performs.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29614190A JPH04168743A (en) | 1990-10-31 | 1990-10-31 | Life time measuring instrument |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29614190A JPH04168743A (en) | 1990-10-31 | 1990-10-31 | Life time measuring instrument |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04168743A true JPH04168743A (en) | 1992-06-16 |
Family
ID=17829682
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29614190A Pending JPH04168743A (en) | 1990-10-31 | 1990-10-31 | Life time measuring instrument |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04168743A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2484551C1 (en) * | 2012-01-31 | 2013-06-10 | Закрытое Акционерное Общество "ТЕЛЕКОМ-СТВ" | Measurement method of life cycle of minor charge carriers in silicon |
| RU2486629C1 (en) * | 2012-01-31 | 2013-06-27 | Закрытое Акционерное Общество "ТЕЛЕКОМ-СТВ" | Method to monitor life time of minority charge carrier in silicon bars |
-
1990
- 1990-10-31 JP JP29614190A patent/JPH04168743A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2484551C1 (en) * | 2012-01-31 | 2013-06-10 | Закрытое Акционерное Общество "ТЕЛЕКОМ-СТВ" | Measurement method of life cycle of minor charge carriers in silicon |
| RU2486629C1 (en) * | 2012-01-31 | 2013-06-27 | Закрытое Акционерное Общество "ТЕЛЕКОМ-СТВ" | Method to monitor life time of minority charge carrier in silicon bars |
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