JPH04168401A - Manufacture of optical wave-guiding channel - Google Patents

Abstract

PURPOSE:To manufacture an optical wave-guiding channel having a high refraction factor area as a wave guide for light by conducting one or more ion implantation on a substrate to form a high refraction factor layer. CONSTITUTION:Masking is applied to a Y3Fe5O12 substrate 10 by a mask 12 with a stripe form 11 left. The implantation of an ion 13 is conducted several times to form an ion implantation area 24, and the mask 12 is removed. The area forms an area having a high refraction factor in the center part to the refraction factor of the substrate 10. The substrate 10 is cut vertically to the form 11, and an optical polishing is conducted to form incident and outgoing ends 25, 26. The resulting high refraction factor layer is used as a wave guide for light.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method of manufacturing an optical waveguide used in optical circuits and passive and active optical components for optical imaging, optical information processing, optical measurement, and the like.

Conventional technology A conventional three-dimensional optical waveguide is a loaded waveguide method as shown in FIGS. 4(a) and (b). Like a ridge-type waveguide, a loading layer 2 is placed on a two-dimensional waveguide layer 1. There is a method in which the high refractive index layer 3 is effectively formed by forming or changing the film thickness of the waveguide layer 1, and the high refractive index layer 3 is used as the optical waveguide layer 4. Also, Figure 5 (
As shown in a) and (b), the composition of a part of the substrate 5 is changed by exchanging ions and protons using an ion exchange method or a proton exchange method to create a three-dimensional high refractive index. The problem to be solved by the invention is to continuously change the composition of a part of the latter substrate. In the type of waveguide that forms the high refractive index region 6 (by the conventional techniques, ion exchange method and proton exchange method are possible only with materials that are made possible by the ionic affinity, dissociation constant, etc.), and any material can be used. It is impossible to replace a part of the substrate with arbitrary ions, and a high refractive index region can be formed by replacing said arbitrary material with an arbitrary ion that can form a high refractive index region. There is no optical waveguide.The present invention aims to perform any ion exchange that can obtain a high refractive index region in any material, which was a problem with the conventional technology, and forms a high refractive index region. To provide a method for manufacturing an optical waveguide as a waveguide layer. Means for Solving the Problems The present invention aims to solve the above problems by implanting ions onto a substrate by one or more ion implantation steps. , a high refractive index layer is formed, and the high refractive index layer is used as an optical waveguide layer. The present invention proposes a method for manufacturing an optical waveguide, which includes a step of forming a high refractive index layer as a layer and a step of forming light input and output ends.According to the present invention, one or more ion implantation steps are performed. By physically implanting arbitrary ions that can obtain a high refractive index region into an arbitrary material, a fine annealing treatment, etc. is performed.
A method for recovering damage to any material caused by multiple ion implantation processes.Exchanging any ion to any material, which could not be done with conventional proton exchange or ion exchange methods. By exchanging a part of an arbitrary material with an arbitrary ion, a high refractive index region is formed, and an optical waveguide using the high refractive index region as a light waveguide layer can be realized. 2 is a flowchart illustrating a method for manufacturing an optical waveguide according to the present invention. YsFesO+ 2 (Y I G ) substrate 1
Masking is performed using a mask 12 leaving a stripe shape 11 on the surface (a). Next, 3° Bi ions 13 were implanted three times to form an ion implantation region 24 (b).

For the first time, the ion implantation was performed using IMV at a dose of 70 m.The concentration distribution 20 of Bi by the first ion implantation was at a depth of 5000 m from the substrate surface as shown in Figure 2. The second ion implantation was performed at a dose of 10"/cm2 at 60CHV. The Bi2 concentration distribution 21 resulting from the second ion implantation peaked at 2500 m from the substrate surface as shown in Figure 2. The third ion implantation was performed at a dose of 10"/cn+" at 100 KV.Bi"
The ion concentration peaks at a depth of 200 mm from the substrate surface. Bi'' concentration distribution 2 due to the third ion implantation.
The Bi'' concentration distribution 23 resulting from three fSo ion implantations has a peak at approximately 2,000 points from the substrate surface as shown in FIG. The formed ion implantation region 24 is Ys
Fes O+ was applied perpendicularly to the stripe shape 11 of the ion implantation region 24, which is a high refractive index layer having a stripe shape 11, which was a region having a high refractive index of about 2% in the center with respect to the refractive index of the substrate 10. The input/output end 25
．． The substrate 1o is cut into a length of about 1 mm perpendicular to the stripe shape 11 to form a light input/output end 25. 26 was formed by performing optical gradation (d).

FIG. 3 shows an optical waveguide of the present invention produced by the above-described manufacturing method of the present invention.
) Bi ions are implanted into the − part by ion implantation.
A high refractive index layer consisting of the injection region 24 is formed, this high refractive index layer 30 is used as a light waveguide layer, and a light input/output end 26 is formed by optical polishing.
Where the 3 μm light was incident, the waveguide length was 1 mm, and the output light was confirmed from the output end 26. The waveguide loss was 1
cm-' Amazing effect of the invention By using the optical waveguide of the present invention, a high refractive index layer can be formed by implanting arbitrary ions that can form a high refractive index layer into an arbitrary material and changing the composition. An optical waveguide in which a layer is an optical waveguide layer cannot be obtained.Furthermore, according to the method of manufacturing an optical waveguide of the present invention, an optical waveguide in which a part of an arbitrary material is exchanged with an arbitrary ion to form a high refractive index layer can be obtained. A process cross-section showing the process flow of the Asahi example after the manufacturing method was obtained. Figure 3 shows the relationship between the implanted Bi'' ion concentration and the depth from the substrate surface during each ion implantation when ion implantation is performed. Figure 4 (a), (b) and Figure 5 (a), (
b) is a cross-sectional view of a conventional optical waveguide. 21. 2
2... Ion concentration distribution 25, 26... Incoming group Name of outgoing salt agent Patent attorney Akira Okaji and 2 others 24-1
＞=L entry 411tA 2f light Φ people's evacuation, thickness and compensation f IOX et al.
(b), S1 type S substrate

Claims (2)

[Claims] (1) Manufacture of an optical waveguide characterized in that a high refractive index layer is formed by implanting ions onto a substrate by one or more ion implantation steps, and the high refractive index layer is used as a light waveguide layer. Method. (2) A step of forming a high refractive index layer that becomes a light waveguide layer by performing ion implantation on the substrate one or more times, and a step of forming light input/output ends on a part of the high refractive index layer. A method for manufacturing an optical waveguide, comprising: