JPH02181483A - Manufacture of superconducting circuit - Google Patents
Manufacture of superconducting circuitInfo
- Publication number
- JPH02181483A JPH02181483A JP1001673A JP167389A JPH02181483A JP H02181483 A JPH02181483 A JP H02181483A JP 1001673 A JP1001673 A JP 1001673A JP 167389 A JP167389 A JP 167389A JP H02181483 A JPH02181483 A JP H02181483A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- ion beam
- film
- focused ion
- implanted
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 239000010409 thin film Substances 0.000 claims abstract description 34
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 23
- 238000000034 method Methods 0.000 claims abstract description 18
- 150000002500 ions Chemical class 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 239000000126 substance Substances 0.000 claims abstract description 4
- 239000007943 implant Substances 0.000 claims abstract description 3
- 239000010408 film Substances 0.000 abstract description 6
- 239000012212 insulator Substances 0.000 abstract description 3
- 230000001678 irradiating effect Effects 0.000 abstract description 2
- 239000007788 liquid Substances 0.000 description 5
- 230000001133 acceleration Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000001307 helium Substances 0.000 description 4
- 229910052734 helium Inorganic materials 0.000 description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 4
- 125000004430 oxygen atom Chemical group O* 0.000 description 4
- 238000000605 extraction Methods 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 239000002887 superconductor Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910021521 yttrium barium copper oxide Inorganic materials 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Landscapes
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
〈産業上の利用分野〉
本発明は超電導回路、詳しくは超電導薄膜回路、の製造
方法に関する。DETAILED DESCRIPTION OF THE INVENTION <Industrial Field of Application> The present invention relates to a method for manufacturing a superconducting circuit, specifically a superconducting thin film circuit.
〈従来の技術〉
超電導薄膜回路を製作するには、゛従来、基板上にＮｂ
等の超電導体を蒸着させて−様な超電ｉ薄膜を形成し、
次いでその表面にレジストを塗布し、露光および現像後
にエツチングを行い、更にレジストを除去するという工
程により、所望のパターンを有する超電導薄膜を得てい
た。<Conventional technology> In order to fabricate a superconducting thin film circuit, 'conventionally, Nb was deposited on a substrate.
By depositing superconductors such as - to form a superelectric i thin film,
A superconducting thin film having a desired pattern was then obtained by applying a resist to the surface, performing etching after exposure and development, and then removing the resist.
〈発明が解決しようとする課題〉
上述のような従来の超電Ｗ薄膜回路の製造方法によると
、工程が多く繁雑で、完成までに長時間を要するととも
に、光露光のためにはフォトマスクを製作する必要があ
り、また、薄膜を人気中にさらし、あるいは大気中と真
空中を往復させる工程があるため、大気からの吸着汚染
の惧れもある。<Problems to be Solved by the Invention> According to the conventional method for manufacturing superelectric W thin film circuits as described above, there are many and complicated steps, it takes a long time to complete the circuit, and a photomask is not required for light exposure. In addition, there is a risk of adsorption contamination from the atmosphere as there is a process of exposing the thin film to the atmosphere or moving it back and forth between the atmosphere and vacuum.
本発明の目的は、前車な工程で、しかも、工程途中で超
電導薄膜を大気にさらす必要のない、超電導薄膜回路の
製造方法を提供することにある。An object of the present invention is to provide a method for manufacturing a superconducting thin film circuit in a simple process and in which there is no need to expose the superconducting thin film to the atmosphere during the process.
く課題を解決するための手段〉
上記の目的を達成するため、本発明では、実施例に対応
する第１図、第２図に示すように、まず、基板賃上に、
ある元素との化合によって臨界温度が上昇する物質から
なる薄膜２を形成し、次に、上記の元素の集束イオンビ
ームＢを薄膜２に所定のパターンで照射してそのイオン
を打ち込む。Means for Solving the Problems> In order to achieve the above object, in the present invention, as shown in FIGS. 1 and 2 corresponding to the embodiment, first, on a substrate,
A thin film 2 made of a substance whose critical temperature increases when combined with a certain element is formed, and then a focused ion beam B of the above element is irradiated onto the thin film 2 in a predetermined pattern to implant the ions.
く作用〉
例えばＭｏは、単体での臨界温度は０．９２にであるが
、Ｎと化合してＭ″ｏＮとなればその臨界温度は１２．
ＯＫとなる。For example, the critical temperature of Mo alone is 0.92, but when it is combined with N to form M″oN, the critical temperature is 12.
OK.
一方、集束イオンビームをあるエネルギの範囲でターゲ
ット物質に照射すれば、そのイオンはターゲット物質内
に注入されることは知られている。On the other hand, it is known that when a target material is irradiated with a focused ion beam within a certain energy range, the ions are implanted into the target material.
本発明はこれらを利用し、集束イオンビームの照射によ
りイオンを打ち込んでその部分のみの臨界温度を上昇さ
せることにより、薄膜２の臨界温度とイオン打ち込み部
Ｓの臨界温度の間の温度で動作する、パターンＳの超電
導薄膜回路を得ている。The present invention takes advantage of these factors and operates at a temperature between the critical temperature of the thin film 2 and the critical temperature of the ion implantation part S by implanting ions by irradiation with a focused ion beam and raising the critical temperature of only that part. , a superconducting thin film circuit with pattern S was obtained.
〈実施例〉
第１図および第２図は本発明実施例の工程説明図で、第
３図はその工程で使用される集束イオンビーム装置の構
造説明図である。<Embodiment> FIGS. 1 and 2 are process explanatory diagrams of an embodiment of the present invention, and FIG. 3 is a structural explanatory diagram of a focused ion beam device used in the process.
まず、第１図に示すように、絶縁体基板１の上面に、−
様なＭ０単体の薄膜２を蒸着する。この薄膜２の臨界温
度は０．９２にであり、液体ヘリウム温度において常電
導体である。First, as shown in FIG. 1, -
A thin film 2 of M0 alone is deposited. This thin film 2 has a critical temperature of 0.92 and is a normal conductor at liquid helium temperatures.
次に、第３図に例示する集束イオンビーム装置のサンプ
ルステージ１６上に基板１を載せ、薄膜２にＮｏの集束
イオンビームＢを照射する。Next, the substrate 1 is placed on the sample stage 16 of the focused ion beam apparatus illustrated in FIG. 3, and the thin film 2 is irradiated with the focused ion beam B of No.
集束イオンビー１、装置は、真空チャンバ（図示せず）
内にイオン源１１、引出し電極１２、静電型レンズ１３
ａおよび１３ｂ１マスフイルタ１４、偏向電極１５、お
よびサンプルステージ１６を備えるとともに、イオンに
加速エネルギを与える加速電源１７と、イオン源１１と
引出し電極１２間に電位差を与える引出し電源１８を有
しており、イオン源１１から引出されたイオンビームは
静電型レンズ１３ａおよび１３ｂで集束されると同時に
、マスフィルタ１４で所望のイオンのみが偏向量１５を
介してサンプルステージ１６に導かれる。Focused ion beam 1, the device includes a vacuum chamber (not shown)
Inside, an ion source 11, an extraction electrode 12, an electrostatic lens 13
a and 13b1 includes a mass filter 14, a deflection electrode 15, and a sample stage 16, as well as an acceleration power source 17 that provides acceleration energy to ions, and an extraction power source 18 that provides a potential difference between the ion source 11 and the extraction electrode 12, The ion beam extracted from the ion source 11 is focused by electrostatic lenses 13a and 13b, and at the same time only desired ions are guided by the mass filter 14 to the sample stage 16 via the amount of deflection 15.
その集束イオンビームＢのエネルギは、加速電源１７の
調節によって変化させることができる。The energy of the focused ion beam B can be changed by adjusting the acceleration power source 17.
さて、このような集束イオンビーム装置によってＮｏの
集束イオンビームＢを作り、その加速エネルギを、Ｎｏ
がＭ。薄膜２に効率よく注入されるエネルギに設定する
。そして、第２図（ａ）に縦断面図、同図（ｂｌに斜視
図で示すように、その集束イオンビームＢを偏向重上１
５によって偏向させつつ、所定のパターンで薄膜２に照
射する。Now, a focused ion beam B of No. is created using such a focused ion beam device, and its acceleration energy is
is M. The energy is set to be efficiently injected into the thin film 2. As shown in FIG. 2(a) in a vertical cross-sectional view and in FIG. 2(bl) in a perspective view, the focused ion beam B is deflected and
5, the thin film 2 is irradiated in a predetermined pattern.
これにより、Ｍ０単体のＷＪ膜２にはその照射部分に所
定パターンのＮｏ打ち込み部Ｓが形成されることになる
。このＮｏ打ち込み部Ｓの臨界温度は、その打ち込み量
によって異なるが、充分なＮｏを打ち込んでその部分が
Ｍ、Ｎとなれば１２．ＯＫにまで上昇する。つまり、こ
のＮｏ打ち込み部Ｓは液体ヘリウム温度で超電導体とな
り、液体ヘリウム温度で動作するパターンＳを持つ超電
導薄膜回路が得られる。As a result, a predetermined pattern of No. implanted portions S is formed in the irradiated portion of the single M0 WJ film 2. The critical temperature of this No. implanted part S varies depending on the amount of No. implanted, but if sufficient No. is implanted and the part becomes M or N, the temperature will be 12. It rises to OK. In other words, the No implanted portion S becomes a superconductor at the liquid helium temperature, and a superconducting thin film circuit having the pattern S that operates at the liquid helium temperature is obtained.
なお、回路中に特に絶縁体部分を必要とする場合には、
集束イオンビー１１装置のイオン種を変え、例えば０°
イオンの集束イオンビームを作り、これをＭ、単体の薄
膜２に所望のパターンで照射して注入する。これにより
、その０°モ
はＭｇ０ｘとなり、絶縁体となる。In addition, if an insulator part is particularly required in the circuit,
Change the ion species of the focused ion bee 11 device, for example, 0°
A focused ion beam of ions is created, and the single thin film 2 is irradiated with it in a desired pattern for implantation. As a result, the 0° mole becomes Mg0x and becomes an insulator.
また、ある元素との化合によって臨界温度が上昇する物
質からなる薄膜、のその薄膜と打ち込むべき元素イオン
の組み合わせは、ＭｏとＮｏのほか、例えば次のような
組み合わせが考えられる。In addition to Mo and No, the combination of the thin film made of a substance whose critical temperature increases when combined with a certain element and the element ions to be implanted may be, for example, the following combinations.
Ａ１．１！：Ｎｂ”：Ａｌ単体での臨界温度（以下、Ｔ
、と称す）が１．１９６にで、Ｎｂ３八ｌとなると１８
．８Ｋ
ＳｎとＮｂ”：５ｎｉｉ″Ｌ体の′ｒ、が３．７２２に
、 Ｎ ｂ、Ｓ ｎが１８．３Ｋ
ＺｒとＮ”：Ｚｒ単体の１゛ｏが０．５４６Ｋ 、 Ｚ
ｒ Ｎが８．９に
以上の組み合わせにより、本発明方法で液体ヘリウム温
度で動作する超電導薄膜回路が得られる。A1.1! :Nb”:Critical temperature of Al alone (hereinafter referred to as T
) is 1.196, and when Nb38L is 18
．． 8K Sn and Nb": 5nii"'r of L body is 3.722, N b, Sn is 18.3K Zr and N": 1゛o of Zr alone is 0.546K, Z
With the above combination of r N of 8.9, a superconducting thin film circuit operating at liquid helium temperature can be obtained by the method of the invention.
また、ＹＢＣＯ等の酸化物高温超電導体では、Ｙ、Ｂａ
およびＣｕをターゲットとするスパッタリングによる製
膜時に、酸素原子を反応させて超電導化しているが、一
般に酸素原子の薄膜結晶内への採り込みが不足しがらで
ある。そこで、スパッタリング時に酸素原子を反応させ
ず、あるいは超電導化するには不充分な量の酸素原子を
反応させて薄膜を作っておき、これにＯ゛集束イオンビ
ームを所望のパターンで照射して打ち込めば、そのパタ
ーンのみを酸化物高温超電導薄膜とすることができ、こ
の場合、本発明の方法によって液体窒素温度で動作する
超電うｒ薄膜回路が得られる。In addition, in oxide high temperature superconductors such as YBCO, Y, Ba
During film formation by sputtering using Cu as a target, superconductivity is achieved by reacting oxygen atoms, but generally the oxygen atoms are not sufficiently incorporated into the thin film crystal. Therefore, during sputtering, a thin film is made by not reacting oxygen atoms, or by reacting an insufficient amount of oxygen atoms to make it superconducting, and then an O゛ focused ion beam is irradiated and implanted in the desired pattern. For example, only the pattern can be an oxide high temperature superconducting thin film, in which case the method of the invention provides a superconducting thin film circuit operating at liquid nitrogen temperatures.
〈発明の効果〉
以上説明したように、本発明によれば、−様な薄膜に集
束イオンビームを所定パターンで照射することで薄膜内
にそのイオンを注入し、その部分の臨界温度を上昇させ
ることによって超電導回路パターンを形成するので、実
質的に製膜工程とイオン注入工程の２つの工程で所望の
超電導回路パターンが得られ、工程の簡略化と製造の所
要時間の短縮が達成され、コストダウンが実現する。<Effects of the Invention> As explained above, according to the present invention, by irradiating a --like thin film with a focused ion beam in a predetermined pattern, the ions are implanted into the thin film and the critical temperature of that part is raised. As a result, the desired superconducting circuit pattern can be obtained in essentially two steps: the film forming process and the ion implantation process, simplifying the process and shortening the time required for manufacturing, thereby reducing costs. Down is realized.
また、従来の製法のようにレジストのめ布工程や露光、
現像工程等を必要とせず、マスクの製作が不要となると
ともに、工程の途中で大気ｔ４ｔ４こ超電導薄膜をさら
す必要がなくなり、吸着汚染の惧れがなく、信頼性の高
い超電導回路が得られる。In addition, unlike conventional manufacturing methods, there is no resist coating process, exposure,
There is no need for a developing process or the like, there is no need to manufacture a mask, there is no need to expose the superconducting thin film to the atmosphere during the process, there is no risk of adsorption contamination, and a highly reliable superconducting circuit can be obtained.
第１図および第２図は本発明実施例の工程説明図、
第３図はその工程で使用される望束イオンビーム装置の
構造説明図である。
・基板
・薄膜
・集束イオンビーム
・イオン打ち込み部1 and 2 are process explanatory diagrams of an embodiment of the present invention, and FIG. 3 is a structural explanatory diagram of a focused ion beam device used in the process.・Substrate, thin film, focused ion beam, ion implantation section
Claims (1)
昇する物質からなる薄膜を形成した後、上記元素の集束
イオンビームを上記薄膜に所定のパターンで照射してそ
のイオンを打ち込むことを特徴とする超電導回路の製造
方法。A thin film made of a substance whose critical temperature increases when combined with a predetermined element is formed on a substrate, and then a focused ion beam of the above element is irradiated onto the thin film in a predetermined pattern to implant the ions. A method for manufacturing superconducting circuits.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1001673A JPH02181483A (en) | 1989-01-06 | 1989-01-06 | Manufacture of superconducting circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1001673A JPH02181483A (en) | 1989-01-06 | 1989-01-06 | Manufacture of superconducting circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02181483A true JPH02181483A (en) | 1990-07-16 |
Family
ID=11508038
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1001673A Pending JPH02181483A (en) | 1989-01-06 | 1989-01-06 | Manufacture of superconducting circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02181483A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06212422A (en) * | 1991-03-07 | 1994-08-02 | Natl Res Inst For Metals | Method for reforming high temperature superconducting oxide thin film |
| WO1996027226A1 (en) * | 1995-02-28 | 1996-09-06 | National Research Council Of Canada | Bandgap tuning of semiconductor well structure |
-
1989
- 1989-01-06 JP JP1001673A patent/JPH02181483A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06212422A (en) * | 1991-03-07 | 1994-08-02 | Natl Res Inst For Metals | Method for reforming high temperature superconducting oxide thin film |
| WO1996027226A1 (en) * | 1995-02-28 | 1996-09-06 | National Research Council Of Canada | Bandgap tuning of semiconductor well structure |
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