JPH04168354A - Humidity sensor - Google Patents

Humidity sensor

Info

Publication number
JPH04168354A
JPH04168354A JP29563890A JP29563890A JPH04168354A JP H04168354 A JPH04168354 A JP H04168354A JP 29563890 A JP29563890 A JP 29563890A JP 29563890 A JP29563890 A JP 29563890A JP H04168354 A JPH04168354 A JP H04168354A
Authority
JP
Japan
Prior art keywords
sensor
stress
humidity
sensor part
humidity sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP29563890A
Other languages
Japanese (ja)
Other versions
JPH0827231B2 (en
Inventor
Yasuhiro Takeda
安弘 武田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP2295638A priority Critical patent/JPH0827231B2/en
Publication of JPH04168354A publication Critical patent/JPH04168354A/en
Publication of JPH0827231B2 publication Critical patent/JPH0827231B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)

Abstract

PURPOSE:To obtain a humidity sensor having the simple structure and the high reliability by providing a constitution wherein a semiconductor has the structure for concentrating stress caused by the expansion and the contraction of a moisture sensitive expanding and contracting body and piezoelectric resistor element regions are arranged at the position of the structure. CONSTITUTION:A sensor part 1 is fixed to a package part 9 with soft bonding agent 8 and connected to electrodes 11, 11... through metal wires 10, 10.... The sensor part 1 is covered with a case which is fixed to the package 9. The sensor part 1 is exposed to humidity atmosphere by way of holes which are provided in the case. When the humidity atmosphere is changed, a moisture sensitive expanding and contracting film 6 is expanded and contracted, and stress is applied on an Si substrate. The stress is concentrated on a cutout groove 7 having the weak structure, and the resistances of piezoelectric resistors 2 and 3 are changed. The stress on the cutout groove 7 in the direction of <1 -10> in the sensor part 1 changes the resistors 2 in the positive direction and changes the resistors 3 in the negative direction. Therefore, the output is doubled, and the humidity sensor characterized by the large output can be realized.

Description

【発明の詳細な説明】 (イ)産業上の利用分野 本発明は湿度センサに関するものである。[Detailed description of the invention] (b) Industrial application field The present invention relates to a humidity sensor.

(ロ)従来の技術 従来、湿度検出体として、セラミックスやポリマーなど
、吸湿により電気的特性の変わるものが知られている。
(B) Conventional Technology Conventionally, materials such as ceramics and polymers, whose electrical characteristics change due to moisture absorption, have been known as humidity detecting materials.

これらの検出体は、検出部がたえず測定雰囲気に晒され
ているため、汚染の影響を受けやすく長期的安定性に欠
ける。このことから、長期の安定性が期待できる感湿伸
縮体を81半導体圧カセンサのダイヤフラム上に被着し
た構造などが提案されている。
These detection bodies are susceptible to contamination and lack long-term stability because their detection parts are constantly exposed to the measurement atmosphere. For this reason, a structure has been proposed in which a moisture-sensitive stretchable body, which can be expected to have long-term stability, is adhered to the diaphragm of the 81 semiconductor pressure sensor.

(ハ)発明が解決しようとする課題 ところで、感湿伸縮体の伸縮を電気信号に変換する従来
タイプの湿度センサは、ダイヤフラム構造やカンチレバ
ー構造を取っていたため製造工程が複雑になる問題があ
った。また、このような構造は、パッケージへの固定方
法が難しく、センサ一部とパッケージの熱膨張係数の差
から歪みが発生し出力が変動する欠点があった。
(c) Problems to be solved by the invention Conventional humidity sensors that convert the expansion and contraction of a moisture-sensitive expandable body into electrical signals had a diaphragm or cantilever structure, which complicated the manufacturing process. . In addition, such a structure has the disadvantage that it is difficult to fix it to the package, and the difference in thermal expansion coefficient between a part of the sensor and the package causes distortion and fluctuations in output.

本発明は、上記の点に鑑みてなされたもので、構造が簡
単でしかも信頼性の高い湿度センサを提供することを目
的とする。
The present invention has been made in view of the above points, and an object of the present invention is to provide a humidity sensor that has a simple structure and is highly reliable.

(ニ)課題を解決するための手段 本発明は、感湿伸縮体の伸縮を半導体のピエゾ抵抗効果
を用いて電気信号に変換する湿度センサにおいて、前記
半導体は感湿伸縮体の伸縮による応力を集中させる構造
を有し、その位置にピエゾ抵抗素領域を配置したことを
特徴とする。
(D) Means for Solving the Problems The present invention provides a humidity sensor that converts the expansion and contraction of a moisture-sensitive expandable body into an electrical signal using the piezoresistance effect of a semiconductor, in which the semiconductor converts stress caused by expansion and contraction of the moisture-sensitive expandable body. It is characterized by having a structure in which the piezoresistive element region is concentrated at that position.

(ホ)作用 上記の構成により、感湿伸縮体の伸縮を半導体のピエゾ
抵抗効果を用いて効率よく電気信号に変換できる。また
、構造が簡単であるためその保持方法に自由度が大きく
且つ保持することによって発生するセンサ一部への歪み
の発生も小さくできる。
(E) Effect With the above configuration, the expansion and contraction of the moisture-sensitive expandable body can be efficiently converted into an electric signal using the piezoresistance effect of the semiconductor. In addition, since the structure is simple, there is a large degree of freedom in how to hold the sensor, and the strain on a part of the sensor caused by holding the sensor can be reduced.

(へ)実施例 以下本発明を図面に示す実施例に基づき説明する。(f) Example The present invention will be explained below based on embodiments shown in the drawings.

センサ一部1はSi  (100)の基板からなり、該
基板の<110>方向と<1−10>方向にそれぞれ2
本づつのピエゾ抵抗体2.2及び3.3を拡散などによ
り形成している。前記各ピエゾ抵抗体2.3は第1図に
示すように、拡散や蒸着による配線4.419.でブリ
ッジ結線されている。このブリッジ結線後に第2図に示
すようにSiNなとのパッシベーション膜5を形成し、
その後ポリアミド、ポリアミドイミドなどによって感湿
伸縮体膜6を形成する。その後更にセンサ一部1の<1
−10>方向のピエゾ抵抗体3.3に添って基板裏面側
からダイシングなどによってV字状の切り込み溝7が形
成される。
The sensor part 1 is made of a Si (100) substrate, and there are two electrodes in the <110> direction and the <1-10> direction of the substrate.
Each piezoresistor 2.2 and 3.3 is formed by diffusion or the like. As shown in FIG. 1, each piezoresistor 2.3 is formed by wiring 4.419. by diffusion or vapor deposition. are bridge-wired. After this bridge connection, a passivation film 5 of SiN is formed as shown in FIG.
Thereafter, a moisture-sensitive stretchable film 6 is formed using polyamide, polyamideimide, or the like. Then further sensor part 1 <1
A V-shaped cut groove 7 is formed by dicing or the like from the back side of the substrate along the piezoresistor 3.3 in the -10> direction.

このようにして作製したセンサ一部1は、軟質接着剤8
によってパッケージ9に固定され、金属ワイヤ10.1
013.によって電極11.1110.に接続されて湿
度センサ12となる。またセンサ一部1はパッケージ9
に固定される図示されないケースにより被覆されると共
にケースに設けられる孔により湿度雰囲気に晒される。
The sensor part 1 produced in this way is attached to a soft adhesive 8.
fixed to the package 9 by a metal wire 10.1
013. By electrode 11.1110. The humidity sensor 12 is connected to the humidity sensor 12. Also, sensor part 1 is packaged in package 9.
It is covered by a case (not shown) that is fixed to the case, and is exposed to a humid atmosphere through holes provided in the case.

上記の構成により、湿度センサ12の湿度雰囲気が変わ
ると感湿伸縮体膜6が伸縮しSi基板に応力が加わる。
With the above configuration, when the humidity atmosphere of the humidity sensor 12 changes, the moisture sensitive expandable film 6 expands and contracts, and stress is applied to the Si substrate.

この応力は構造的に弱い切り込み!17に集中しピエゾ
抵抗体2.3の抵抗を変化させる。センサ一部lにおけ
る<1−10>方向の切り込み溝7に対する応力は、ピ
エゾ抵抗体2を正の方向へ、ピエゾ抵抗体3を負の方向
へ変化させるため、出力は倍増し大きな出力の湿度セン
サーが実現できる。
This stress is a structurally weak cut! 17 and change the resistance of the piezoresistor 2.3. The stress on the cut groove 7 in the <1-10> direction in the sensor part l changes the piezoresistor 2 in the positive direction and the piezoresistor 3 in the negative direction, so the output doubles and the humidity of the large output increases. sensor can be realized.

第3図及び第4図に示すものは他の実施例で、感湿伸縮
体膜6をセンサ一部1の<1−10>方向のピエゾ抵抗
体3.3に添って基板裏面側に形成されたV字状の切り
込み溝7に設けたもので、それ以外の構成は第1図及び
第2図に示す実施例のものと同じであり、その説明は省
略する。
3 and 4 are other embodiments in which a moisture-sensitive stretchable film 6 is formed on the back side of the substrate along the piezoresistor 3.3 in the <1-10> direction of the sensor part 1. The other structure is the same as that of the embodiment shown in FIGS. 1 and 2, and the explanation thereof will be omitted.

(ト)発明の効果 本発明によれば、感湿伸縮体の伸縮を半導体のピエゾ抵
抗効果を利用して電気信号に変換する場合に、半導体基
板に感;2伸縮体の伸縮により応力が集中する構造を設
け、この位置にピエゾ抵抗素領域を配置したものである
から、信頼性の高いしかも構造の簡単な湿度センサーを
安価に提供できる。
(G) Effects of the Invention According to the present invention, when the expansion and contraction of the moisture-sensitive expandable body is converted into an electrical signal using the piezoresistance effect of the semiconductor, stress is concentrated on the semiconductor substrate due to the expansion and contraction of the moisture-sensitive expandable body. Since a piezoresistive element region is arranged at this position, a highly reliable humidity sensor with a simple structure can be provided at a low cost.

また、半導体基板の方位を最適化することで、S/Nの
良い湿度センサーが実現できる。
Furthermore, by optimizing the orientation of the semiconductor substrate, a humidity sensor with good S/N can be realized.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の実施例を示す要部説明図、第2図は第
1図のものにパッシベーション膜と感湿伸縮体膜を形成
した側面図、第3図及び第4図は第1図と第2図に対応
する他の実施例の要部説明図と側面図である。 1−センサ一部、  2.3−ピエゾ抵抗体4−配線、
     5−パッシベーション膜6−感湿伸縮体膜、
7−切り込み溝 8−軟質接着剤、  9−パッケージ 1〇−金属ワイヤ、11−電極
FIG. 1 is an explanatory view of the main part showing an embodiment of the present invention, FIG. 2 is a side view of the same as shown in FIG. FIG. 2 is an explanatory diagram of main parts and a side view of another embodiment corresponding to FIG. 2; 1-part of the sensor, 2.3-piezoresistor 4-wiring,
5-passivation film 6-moisture sensitive stretchable film,
7-Notch groove 8-Soft adhesive, 9-Package 10-Metal wire, 11-Electrode

Claims (1)

【特許請求の範囲】[Claims] (1) 感湿伸縮体の伸縮を半導体のピエゾ抵抗効果を
用いて電気信号に変換する湿度センサにおいて、前記半
導体は感湿伸縮体の伸縮による応力を集中させる構造を
有し、その位置にピエゾ抵抗素領域を配置したことを特
徴とする湿度センサ。
(1) In a humidity sensor that converts the expansion and contraction of a moisture-sensitive expandable body into an electrical signal using the piezoresistance effect of a semiconductor, the semiconductor has a structure that concentrates stress due to the expansion and contraction of the moisture-sensitive expandable body, and a piezoelectric sensor is placed at that position. A humidity sensor characterized by having a resistor region arranged therein.
JP2295638A 1990-10-31 1990-10-31 Humidity sensor Expired - Fee Related JPH0827231B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2295638A JPH0827231B2 (en) 1990-10-31 1990-10-31 Humidity sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2295638A JPH0827231B2 (en) 1990-10-31 1990-10-31 Humidity sensor

Publications (2)

Publication Number Publication Date
JPH04168354A true JPH04168354A (en) 1992-06-16
JPH0827231B2 JPH0827231B2 (en) 1996-03-21

Family

ID=17823246

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2295638A Expired - Fee Related JPH0827231B2 (en) 1990-10-31 1990-10-31 Humidity sensor

Country Status (1)

Country Link
JP (1) JPH0827231B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5482678A (en) * 1993-05-25 1996-01-09 Rosemount Inc. Organic chemical sensor
JP2014174100A (en) * 2013-03-12 2014-09-22 Asahi Kasei Electronics Co Ltd Humidity sensor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6378048A (en) * 1986-09-19 1988-04-08 Sanyo Electric Co Ltd Humidity sensor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6378048A (en) * 1986-09-19 1988-04-08 Sanyo Electric Co Ltd Humidity sensor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5482678A (en) * 1993-05-25 1996-01-09 Rosemount Inc. Organic chemical sensor
JP2014174100A (en) * 2013-03-12 2014-09-22 Asahi Kasei Electronics Co Ltd Humidity sensor

Also Published As

Publication number Publication date
JPH0827231B2 (en) 1996-03-21

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