JPH0416551A - Low-temperature sintered porcelain composition - Google Patents
Low-temperature sintered porcelain compositionInfo
- Publication number
- JPH0416551A JPH0416551A JP2118001A JP11800190A JPH0416551A JP H0416551 A JPH0416551 A JP H0416551A JP 2118001 A JP2118001 A JP 2118001A JP 11800190 A JP11800190 A JP 11800190A JP H0416551 A JPH0416551 A JP H0416551A
- Authority
- JP
- Japan
- Prior art keywords
- ratio
- low
- weight
- terms
- temp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052573 porcelain Inorganic materials 0.000 title claims description 25
- 239000000203 mixture Substances 0.000 title claims description 22
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Chemical compound [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 abstract description 8
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 abstract description 8
- 238000009413 insulation Methods 0.000 abstract description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 7
- 238000005476 soldering Methods 0.000 abstract description 7
- 229910011255 B2O3 Inorganic materials 0.000 abstract description 5
- 230000007423 decrease Effects 0.000 abstract description 2
- 238000001354 calcination Methods 0.000 abstract 8
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 abstract 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 3
- 229910000019 calcium carbonate Inorganic materials 0.000 abstract 3
- 235000010216 calcium carbonate Nutrition 0.000 abstract 3
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052593 corundum Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 3
- 238000010304 firing Methods 0.000 description 21
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 7
- 239000010949 copper Substances 0.000 description 7
- 239000000654 additive Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
この発明は、低温焼結磁器組成物に関し、特に、電気回
路基板、たとえば、複数のシート状磁器を積層し、磁器
間に回路を形成してなる多層電気回路基板に適した低温
焼結磁器組成物に関する。Detailed Description of the Invention (Industrial Application Field) The present invention relates to a low-temperature sintered porcelain composition, and in particular to an electric circuit board, for example, a composition for laminating a plurality of sheet-like porcelains to form a circuit between the porcelains. The present invention relates to a low-temperature sintered porcelain composition suitable for multilayer electric circuit boards.
（従来技術）
従来、この発明の発明者らは、低温で焼成でき、しかも
絶縁抵抗が高く誘電率が低い磁器を得ることができる、
数種の磁器組成物を提案した。これらの磁器組成物は、
たとえば特開昭６２−１２８９６４号公報および特開昭
６２−２２６８５５号公報に開示されている。なお、特
開昭６２−１２８９６４号公報には、５ｉＣｈ２５〜８
０重量％、Ｂａｄ、ＳｒＯのうち１種または２種が１５
〜７０重量％およびＢｚ Ｏｓ １．５〜５重量％さら
に必要に応じてＡｌｚＯｘ３０重量％以下からなる主成
分に、Ｃｒ、０．、Ｃｕｂ、Ｎｉｐ、ＣｏｔＯ３および
Ｆｅｚｅ３のいずれか１種が添加含有された磁器組成物
であって、添加物がＣｒ ｚ Ｏ３またはＣｕＯの場合
には０．２〜ｌＯ重量％の範囲で添加され、添加物がＮ
Ｚ Ｏ＋ Ｃ’ ｚ ＯｓおよびＦｅ、０．の場合
には１〜１０重量％の範囲で添加される、磁器組成物が
開示されている。(Prior Art) The inventors of the present invention have previously discovered that it is possible to obtain porcelain that can be fired at low temperatures, has high insulation resistance, and has a low dielectric constant.
Several types of porcelain compositions were proposed. These porcelain compositions are
For example, it is disclosed in JP-A-62-128964 and JP-A-62-226855. In addition, 5iCh25-8
0% by weight, one or two of Bad and SrO is 15
~70% by weight, BzOs 1.5~5% by weight, and if necessary, AlzOx 30% by weight or less, Cr, 0. , Cub, Nip, CotO3 and Feze3, and when the additive is CrzO3 or CuO, it is added in a range of 0.2 to 10% by weight, Additives are N
Z O+ C' z Os and Fe, 0. A porcelain composition is disclosed in which the additive is added in an amount ranging from 1 to 10% by weight.
これらの従来の磁器組成物では、非酸化性雰囲気で１０
００℃以下の低温で焼結することが可能であり、たとえ
ば内部電極などの導体材料として銅を用いることができ
る。For these conventional porcelain compositions, 10
It is possible to sinter at a low temperature of 00° C. or lower, and copper can be used as a conductive material for internal electrodes and the like.
（発明が解決しようとする課題）
しかしながら、これらの従来の磁器組成物では、その最
適焼成温度範囲が１５℃以下と狭く、それから得られる
磁器の歩留りが低いという欠点があった。(Problems to be Solved by the Invention) However, these conventional porcelain compositions have the disadvantage that the optimum firing temperature range is narrow, 15° C. or less, and the yield of porcelain obtained from them is low.
それゆえに、この発明の主たる目的は、低温で焼成でき
、最適焼成温度範囲が広く、しかも絶縁抵抗が高く誘電
率が低い磁器を得ることができる、低温焼結磁器組成物
を提供することである。Therefore, the main object of the present invention is to provide a low-temperature sintered porcelain composition that can be fired at low temperatures, has a wide optimum firing temperature range, and can yield porcelain with high insulation resistance and low dielectric constant. .
（課題を解決するための手段）
この発明は、Ｓｉ成分をＳ ｉ Ｏｚに換算して４０．
０〜７０．０重量％、Ｂａ成分をＢａＣＯ３に換算して
２０．０〜５０．０重量％、Ａｔ’成分をＡＩｔｏ３に
換算して２．０〜１０．０重量％、Ｂ成分をＢｔｕｓに
換算して１．０〜３．０重量％、Ｃｒ成分をＣｒ２Ｏ３
に換算して０．３〜３Ｏ重量％、およびＣａ成分をＣａ
Ｃ０１に換算して０．３〜３．０重量％含む、低温焼結
磁器組成物である。(Means for Solving the Problems) This invention provides Si components of 40.
0 to 70.0% by weight, Ba component converted to BaCO3 20.0 to 50.0% by weight, At' component converted to AIto3 2.0 to 10.0% by weight, B component converted to Btus. Converted to 1.0 to 3.0% by weight, Cr component is Cr2O3
0.3 to 30% by weight in terms of Ca
It is a low-temperature sintered porcelain composition containing 0.3 to 3.0% by weight in terms of C01.
（発明の効果）
この発明によれば、低温で焼成でき、最適焼成温度範囲
が広く、しかも絶縁抵抗が高く誘電率が低い磁器を得る
ことができる、低温焼結磁器組成物が得られる。そのた
め、この発明にかかる低温焼結磁器組成物は、それをた
とえばバ・７チ炉や連続焼成炉にフルチャージで焼成す
ることができる。(Effects of the Invention) According to the present invention, a low-temperature sintered porcelain composition can be obtained that can be fired at a low temperature, has a wide optimum firing temperature range, and can yield a porcelain with high insulation resistance and low dielectric constant. Therefore, the low-temperature sintered porcelain composition according to the present invention can be fired at full charge in, for example, a batch furnace or a continuous firing furnace.
したがって、この発明にかかる低温焼結磁器組成物は、
それから得られる磁器の歩留りが高くなり、たとえば多
層電気回路基板などの電気回路基板の量産実用化に大き
く寄与することができる。Therefore, the low temperature sintered porcelain composition according to the present invention is
The yield of the porcelain obtained therefrom is increased, and can greatly contribute to the practical application of mass production of electric circuit boards such as multilayer electric circuit boards.
この発明の上述の目的、その他の目的、特徴および利点
は、以下の実施例の詳細な説明から一層明らかとなろう
。The above objects, other objects, features and advantages of the present invention will become more apparent from the detailed description of the following embodiments.
（実施例）
Ｓ ｉＯｚ 、ＢａＣ０１、Ａｌｚ ０３ 、Ｂ２０３
Ｃｒ、０．およびＣａ ＣＯｓを別表に示す組成比率の
磁器が得られるように秤量し混合した。この原料混合物
を８５０〜９５０℃で仮焼し、粉砕した後、有機バイン
ダーを加えて混練し、ドクターブレード法によって厚さ
１削のシート状に成形し、グリーンシートとした。(Example) S iOz , BaC01, Alz 03 , B203
Cr, 0. and CaCOs were weighed and mixed to obtain porcelain having the composition ratio shown in the attached table. This raw material mixture was calcined at 850 to 950°C, pulverized, then kneaded with an organic binder added thereto, and formed into a sheet with a thickness of 1 cut using a doctor blade method to obtain a green sheet.
このグリーンシートを縦３０鶴、横１０ｍｍの角板状に
カットし、その表面上に銅電極となるべき銅粉末と有機
質ビヒクルとを重量比８０ ： ２０の割合で混合した
銅ペーストを印刷した。そして、これを窒素−水蒸気の
還元性もしくは非酸化性雰囲気の中で、９００〜１０４
０℃で１時間焼成して試験試料とした。This green sheet was cut into a rectangular plate shape with a length of 30 squares and a width of 10 mm, and a copper paste containing a mixture of copper powder to be used as a copper electrode and an organic vehicle at a weight ratio of 80:20 was printed on the surface of the green sheet. Then, in a reducing or non-oxidizing atmosphere of nitrogen and water vapor,
A test sample was prepared by firing at 0° C. for 1 hour.
焼成する温度の上昇にともなっである温度までは試料の
収縮率が大きくなってい（が、その収縮率が最大となっ
た場合の温度を試料の最適な焼成温度として第１表に示
した。As the firing temperature increases, the shrinkage rate of the sample increases up to a certain temperature (however, the temperature at which the shrinkage rate reaches the maximum is shown in Table 1 as the optimum firing temperature for the sample.
さらに、第１表には、試料の最適焼成温度範囲を示した
。この最適焼成温度範囲は、表中の焼成温度を中心とし
てその下限を試料が０．５％大きくなる温度とし、その
上限をはんだ付は性が不良となる温度として、それらの
差から求めた。なお、試料のはんだ付は性を調べるため
には、試料について、予め１５０℃で２０秒予熱し、銅
電極の表面に塩素系のフラックスを付けた後、２３０−
１：１０℃の鉛−錫はんだ槽に５秒間浸漬し、はんだ付
けを行った。そして、目視で銅電極の表面を見たとき、
銅電極の表面の９０％以上がはんだで覆われているもの
をはんだ付は性がよいものとし、９０％未満しか覆われ
れていないものをはんだ付は性が不良であるものとした
。Furthermore, Table 1 shows the optimum firing temperature range for the samples. This optimum firing temperature range was determined from the difference between the firing temperature in the table, the lower limit being the temperature at which the sample becomes larger by 0.5%, and the upper limit being the temperature at which soldering becomes poor. To check the soldering properties of the sample, preheat the sample at 150°C for 20 seconds, apply chlorine-based flux to the surface of the copper electrode, and then heat the sample at 230°C.
1: Soldering was performed by immersing the sample in a lead-tin solder bath at 10° C. for 5 seconds. When looking at the surface of the copper electrode with the naked eye,
If 90% or more of the surface of the copper electrode was covered with solder, the soldering properties were considered to be good, and if less than 90% was covered, the soldering properties were judged to be poor.
さらに、これらの試料について、絶縁抵抗および誘電率
を測定した。それらの特性はすべて良好なものであった
が、特に、誘電率について第１表に示した。Furthermore, the insulation resistance and dielectric constant of these samples were measured. All of their properties were good, especially the dielectric constant shown in Table 1.
なお、表で番号に率を付した試料は、この発明の範囲外
のものであり、それ以外はこの発明の範囲内のものであ
る。Note that the samples with numbers and percentages attached in the table are outside the scope of this invention, and the others are within the scope of this invention.
この発明の低温焼結磁器組成物における組成範囲を限定
した理由はつぎの通りである。The reason for limiting the composition range of the low temperature sintered porcelain composition of this invention is as follows.
（１）Ｓ ｉＯｘが４０重量％未満では、誘電率が９．
０より高くなり使用周波数が高い場合に電子回路の特性
が低下する。５ｉＱ２が７０重量％を超えると、焼成温
度が１０００’Ｃ以上となり、たとえば内部電極などの
導体材料として銅を使用できなくなり好ましくない。(1) When SiOx is less than 40% by weight, the dielectric constant is 9.
When it becomes higher than 0 and the frequency used is high, the characteristics of the electronic circuit deteriorate. When 5iQ2 exceeds 70% by weight, the firing temperature becomes 1000'C or more, which is not preferable because copper cannot be used as a conductive material for internal electrodes, for example.
（２）ＢａＣＯ＝が２ｏ重量％未満では、抗折強度が１
５００ｋｇ／Ｊとやや低く焼成温度も高くなりがちで好
ましくない。ＢａＣＯ５が５０重量％を超えると、誘電
率が９より大きくなり好ましくない。(2) When BaCO= is less than 20% by weight, the bending strength is 1
The firing temperature is rather low at 500 kg/J, and the firing temperature tends to be high, which is not preferable. When BaCO5 exceeds 50% by weight, the dielectric constant becomes greater than 9, which is not preferable.
（３）Ａｊ！ｚ ｏ２が２重量％未満あるいは１０重量
％を趨える場合には、焼成温度が上昇する傾向にあり好
ましくない。(3) Aj! If z o2 is less than 2% by weight or exceeds 10% by weight, the firing temperature tends to increase, which is not preferable.
（４）Ｂ２０３がＩＩ量％未満でば焼成温度が１０００
℃以上になり、３重量％を超えると最適焼成温度範囲が
１５℃以下となって、それぞれ好ましくない。(4) If B203 is less than II%, the firing temperature is 1000%.
℃ or more, and if it exceeds 3% by weight, the optimum firing temperature range becomes 15°C or less, which is not preferable.
（５）Ｃｒｚ ０３が０．３重量％未満でははんだ付は
性が悪くなり、３重量％を超えると絶縁抵抗が下がる場
合があって、それぞれ好ましくない。(5) If Crz 03 is less than 0.3% by weight, soldering properties will be poor, and if it exceeds 3% by weight, insulation resistance may decrease, which are both undesirable.
（６） Ｃａ ＣＯｘが０．３重量％未満では最適焼成
温度範囲が１５℃以下と狭く、また、３重量％を超える
と焼成温度が１０００℃を超えて、それぞれ好ましくな
い。(6) If Ca COx is less than 0.3% by weight, the optimum firing temperature range is narrow, 15°C or less, and if it exceeds 3% by weight, the firing temperature exceeds 1000°C, which is not preferable.
それに対して、この発明の範囲内の低温焼結磁器組成物
では、低温で焼成でき、絶縁抵抗が高く誘電率が低い磁
器を得ることができるとともに、最適焼成温度範囲が２
０℃前後となり、バッチ炉あるいは連続焼成炉ともフル
チャージで焼成することができる。そのため、この発明
にかかる低温焼結磁器組成物は、それから得られる磁器
の歩留りが高くなり、たとえば多層電気回路基板などの
電気回路基板の量産実用化に大きく寄与することができ
る。In contrast, the low-temperature sintered porcelain composition within the scope of the present invention can be fired at low temperatures, yielding porcelain with high insulation resistance and low dielectric constant, and the optimum firing temperature range is 2.
The temperature is around 0°C, and firing can be performed at full charge in either a batch furnace or a continuous firing furnace. Therefore, the low-temperature sintered porcelain composition according to the present invention has a high yield of porcelain obtained therefrom, and can greatly contribute to the practical application of mass production of electric circuit boards such as multilayer electric circuit boards.
特許出願人 株式会社 村田製作所 代理人 弁理士 岡 １） 全 啓Patent applicant Murata Manufacturing Co., Ltd. Agent: Patent Attorney Oka 1) Zenhiro
Claims (1)
重量％、 Ｂａ成分をＢａＣＯ＿３に換算して２０．０〜５０．０
重量％、 Ａｌ成分をＡｌ＿２Ｏ＿３に換算して２．０〜１０．０
重量％、 Ｂ成分をＢ＿２Ｏ＿３に換算して１．０〜３．０重量％
、 Ｃｒ成分をＣｒ＿２Ｏ＿３に換算して０．３〜３．０重
量％、および Ｃａ成分をＣａＣＯ＿３に換算して０．３〜３．０重量
％含む、低温焼結磁器組成物。[Claims] The Si component is 40.0 to 70.0 in terms of SiO_2.
Weight%, Ba component converted to BaCO_3 is 20.0 to 50.0
Weight%, Al component converted to Al_2O_3 is 2.0 to 10.0
Weight%, 1.0 to 3.0% by weight when B component is converted to B_2O_3
A low-temperature sintered porcelain composition containing 0.3 to 3.0% by weight of a Cr component in terms of Cr_2O_3 and 0.3 to 3.0% by weight of a Ca component in terms of CaCO_3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2118001A JPH0798679B2 (en) | 1990-05-07 | 1990-05-07 | Low temperature sintered porcelain composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2118001A JPH0798679B2 (en) | 1990-05-07 | 1990-05-07 | Low temperature sintered porcelain composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0416551A true JPH0416551A (en) | 1992-01-21 |
| JPH0798679B2 JPH0798679B2 (en) | 1995-10-25 |
Family
ID=14725596
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2118001A Expired - Lifetime JPH0798679B2 (en) | 1990-05-07 | 1990-05-07 | Low temperature sintered porcelain composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0798679B2 (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0861816A2 (en) * | 1997-02-28 | 1998-09-02 | Murata Manufacturing Co., Ltd. | Insulating ceramic composition and ceramic inductor using the same |
| EP1022264A2 (en) * | 1999-01-22 | 2000-07-26 | Ngk Insulators, Ltd. | Low temperature-fired porcelain articles and electronic parts including such porcelain articles |
| JP2002173362A (en) * | 2000-12-06 | 2002-06-21 | Murata Mfg Co Ltd | Dielectric ceramic composition and multilayer substrate using the same |
| KR100621195B1 (en) * | 2004-02-06 | 2006-09-13 | 주식회사 아이엠텍 | LTCC Ceramic Powder Composition and Manufacturing Method Of The Same |
| US7211533B2 (en) | 2005-04-28 | 2007-05-01 | Murata Manufacturing Co., Ltd. | Oxide porcelain composition, ceramic multilayer substrate, and ceramic electronic component |
| WO2011093489A1 (en) * | 2010-02-01 | 2011-08-04 | 株式会社村田製作所 | Process for producing electronic component |
-
1990
- 1990-05-07 JP JP2118001A patent/JPH0798679B2/en not_active Expired - Lifetime
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0861816A2 (en) * | 1997-02-28 | 1998-09-02 | Murata Manufacturing Co., Ltd. | Insulating ceramic composition and ceramic inductor using the same |
| EP0861816A3 (en) * | 1997-02-28 | 1998-11-11 | Murata Manufacturing Co., Ltd. | Insulating ceramic composition and ceramic inductor using the same |
| US6080693A (en) * | 1997-02-28 | 2000-06-27 | Murata Manufacturing Co., Ltd. | Insulating ceramic composition and ceramic inductor using the same |
| EP1022264A2 (en) * | 1999-01-22 | 2000-07-26 | Ngk Insulators, Ltd. | Low temperature-fired porcelain articles and electronic parts including such porcelain articles |
| EP1022264A3 (en) * | 1999-01-22 | 2000-11-29 | Ngk Insulators, Ltd. | Low temperature-fired porcelain articles and electronic parts including such porcelain articles |
| US6379805B1 (en) | 1999-01-22 | 2002-04-30 | Ngk Insulators, Ltd. | Low temperature-fired porcelain articles and electronic parts including such porcelain articles |
| JP2002173362A (en) * | 2000-12-06 | 2002-06-21 | Murata Mfg Co Ltd | Dielectric ceramic composition and multilayer substrate using the same |
| JP4714986B2 (en) * | 2000-12-06 | 2011-07-06 | 株式会社村田製作所 | Dielectric ceramic composition and multilayer substrate using the same |
| KR100621195B1 (en) * | 2004-02-06 | 2006-09-13 | 주식회사 아이엠텍 | LTCC Ceramic Powder Composition and Manufacturing Method Of The Same |
| US7211533B2 (en) | 2005-04-28 | 2007-05-01 | Murata Manufacturing Co., Ltd. | Oxide porcelain composition, ceramic multilayer substrate, and ceramic electronic component |
| WO2011093489A1 (en) * | 2010-02-01 | 2011-08-04 | 株式会社村田製作所 | Process for producing electronic component |
| CN102741956A (en) * | 2010-02-01 | 2012-10-17 | 株式会社村田制作所 | Process for producing electronic component |
| US8590123B2 (en) | 2010-02-01 | 2013-11-26 | Murata Manufacturing Co., Ltd. | Method for producing electronic component |
| JP5382144B2 (en) * | 2010-02-01 | 2014-01-08 | 株式会社村田製作所 | Manufacturing method of electronic parts |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0798679B2 (en) | 1995-10-25 |
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