JPH04165078A - Coating device for long-sized body and method therefor - Google Patents

Abstract

PURPOSE:To prevent the outflow of reactive gases and to form thin films having high adhesive strength by providing an inlet preliminary chamber, a reaction chamber and an outlet preliminary chamber which are communicated with each other through fine holes to serve as the passage for a long-sized body, increasing the pressures in the two preliminary chambers and forming coating layers within the reaction chamber. CONSTITUTION:The long-sized body 59 moves continuously from the inlet preliminary chamber 50 through the reaction chamber 51 up to the outlet preliminary chamber 52. The above-mentioned chambers 50, 51, 52 are segmented by partition walls 61, 62 and have the fine holes 64, 65 to serve as the passage for the long-sized body 59. The fine holes 64, 65 have the sectional area larger than the cross sectional area of the long-sized body. After the inside of the above-mentioned inlet preliminary chamber 50, the reaction chamber 51 and the outlet preliminary chamber 52 is evacuated, inert gases 71, 78 are introduced into the above-mentioned two preliminary chambers 50, 52. The reactive gases 72 are simultaneously introduced into the reaction chamber 51 to generate plasma 73 and the long-sized body 59 is subjected to a coating treatment, by which the coating layers are formed thereon.

Description

DETAILED DESCRIPTION OF THE INVENTION E. Industrial Field of Application This invention relates to a coating device and a coating method for elongated objects for forming a coating layer on the surface of elongated objects such as wires and stripes by vapor phase growth. In particular,
The present invention relates to a coating device and a coating method for forming a surface coating layer on the outer peripheral surface of a continuously moving electric wire.

[Background Art] Chemical vapor deposition (CVD) is a method of forming a film on a material to be processed using a gas phase chemical reaction of a source gas. CV
The D method is used in the semiconductor field, for example, to form an insulating film on a silicon wafer, and in the cemented carbide tool field, it is used to form a hard film on a chip.

Thin film formation using the CVD method on silicon wafers and carbide chips is typically performed in batch processing.

In other words, after a plurality of materials to be processed are placed in the processing chamber, the processing chamber is brought into a vacuum state, then raw material gas is introduced into the processing chamber to form a thin film, and finally, the vacuum in the processing chamber is leaked. Remove the material to be treated.

In the above-described batch processing, there is a limit to the number of materials to be processed that can be processed at one time. Furthermore, thin film formation by batch processing is not suitable for elongated objects such as lines or stripes.

In order to improve the productivity of forming thin films on wafers and chips, apparatuses that perform semi-continuous coating processing have been proposed. An example of such a semi-continuous coating apparatus is shown in FIG.

A coating apparatus having a structure similar to that shown in FIG. 7 is disclosed, for example, in "Thin Film Notebook" published by Ohm Co., Ltd. in December 1983.

The semi-continuous coating apparatus shown in FIG. 7 comprises an inlet prechamber 1, a reaction chamber 2, and an outlet prechamber 3. Communication between the inlet preliminary chamber 1 and the reaction chamber 2 is interrupted by an openable/closeable gate 4.

Communication between the reaction chamber 2 and the outlet preliminary chamber 3 is cut off by a gate 5 that can be opened and closed. The inlet preliminary chamber 1, the reaction chamber 2, and the outlet preliminary chamber 3 are each equipped with a vacuum pump 6.7.
8 are connected. The illustrated coating apparatus is a plasma CVD apparatus, and includes a plasma generation electrode 10,
A plasma generator 11 is provided. In the figure, 9 is a gas introduction pipe for introducing reaction gas into the reaction chamber 2, and 12
1 is a heater for heating the material to be coated located in the reaction chamber 2, and 13, 14, and 15 is a cassette moving device for transporting the cassette 16.

In the semi-continuous coating apparatus having the above-described structure, thin film formation is performed by the following procedure.

(1) Place the material to be coated on the cassette 16,
This cassette 16 is inserted into the entrance preliminary chamber 1 through the cassette insertion port 17.

(2) Activate the vacuum pump 6 to evacuate the inlet preliminary chamber 1 to a predetermined degree of vacuum.

(3) After the pressure in the inlet preliminary chamber 1 becomes the same as the pressure in the reaction chamber 2, open the gate 4 and transfer the cassette 16 from the inlet preliminary chamber 1 to the reaction chamber 2.

(4) Close the gate 4 to cut off communication between the inlet preliminary chamber 1 and the reaction chamber 2.

(5) Raw material gas is introduced into the reaction chamber 2 through the gas introduction pipe 9, and plasma is generated under a predetermined pressure to form a thin film.

(6) After the thin film formation is completed, open the gate 5 and move the cassette 16 from the reaction chamber 2 to the exit preliminary chamber 3.

(7) After leaking the vacuum in the outlet preliminary chamber 3, take out the cassette 16 from the cassette outlet 18.

Another example of a coating device is a roll-to-roll type coating device. FIG. 8 schematically shows a roll-to-roll type coating apparatus. A coating apparatus having a structure similar to that shown in FIG. 8 is disclosed, for example, in the aforementioned "Thin Film Handbook."

The roll-to-roll type coating device shown in FIG. 8 was developed as an effective device for forming thin films on elongated objects such as wires.

The coating apparatus shown in FIG. 8 includes a vacuum chamber 30, a vacuum pump 31, plasma generation electrodes 32 and 33, a plasma generation device 34, heaters 35 and 36, and a gas introduction pipe 37.
Equipped with. A supply roll 38 and a take-up roll 39 are arranged within the vacuum chamber 30 . The metal wire 40 continuously moves from the supply roll 38 to the take-up roll 39.

Thin film formation on the continuously moving metal wire 40 is performed in a region sandwiched between the electrodes 32 and 33.

[Problem to be solved by the invention] A semi-continuous coating device as shown in Fig. 7 is suitable for single-sided coating of components such as silicon wafers and carbide chips, but It cannot be applied to forming a thin film on a long body such as a moving line or strip.

A roll-to-roll type coating device as shown in FIG. 8 was developed with the intention of forming a thin film on a long object such as a line or strip. Since the take-up roll 39 is placed within the vacuum chamber 30 for forming the thin film, the following problems arise.

The region sandwiched between the pair of plasma generation electrodes 32 and 33 becomes a plasma generation region 41. Thin film formation on the metal wire 40 is performed within the plasma generation region 41. However, since the supply roll 38 and the take-up roll 39 are placed in the vacuum chamber 30 for performing plasma CVD, unreacted gas or reaction product gas may be present on the surface of the metal wire 40 outside the plasma generation area. Attach to. This adhesion layer has weak adhesion. For example, plasma generation area 41
If an adhesion layer with weak adhesion is formed on the surface of the metal wire 40 before entering the plasma generation region 41, even if a thin film is formed on the adhesion layer, the thin film will not adhere to the surface of the metal wire 40. Peeling occurs at the interface between the layer and the surface of the metal wire 40.

This invention was made in view of the above-mentioned circumstances, and its purpose is to
An object of the present invention is to provide a coating device for a long body that can form a thin film with strong adhesion.

Another object of the present invention is to provide a coating device for a long body that can prevent reaction gas from flowing out from the thin film forming region.

Still another object of the present invention is to provide a coating device for a long body that can infinitely increase the length of the long body on which a thin film is continuously formed.

Still another object of the present invention is to provide a coating method for a long body that can form a thin film with strong adhesion on a continuously moving long body.

[Means for Solving the Problems] and [Operations and Effects of the Invention] In one aspect of the present invention, a coating apparatus for a long body includes an inlet preliminary chamber, a reaction chamber, and an outlet preliminary chamber, and includes an inlet preliminary chamber, a reaction chamber, and an outlet preliminary chamber. A surface coating layer is formed in the reaction chamber by a vapor phase growth method on the elongated body that is continuously moved to the outlet preparatory chamber via the reaction chamber. The reaction chamber and each preliminary chamber are separated by a partition wall. The partition wall has pores that are to be passages for continuously moving elongated bodies. The pores have a cross-sectional area larger than the cross-sectional area of the elongate body.

In the coating apparatus for a long body having the above structure, the reaction chamber and each preparatory chamber communicate only through the pores that serve as passages in the long body. Therefore, it is possible to prevent reaction gas and evaporated substances for thin film formation from flowing out from the reaction chamber to each preliminary chamber.

In other words, since the thin film is formed on the surface of the elongated body only in the predetermined thin film forming area, it is possible to form a thin film with strong adhesion.

It is conceivable to place an airtight seal in the pores of the partition wall to completely block communication between the reaction chamber and each preliminary chamber. However, a seal structure for achieving complete airtightness while allowing movement of the elongated body is complicated and difficult to realize. Even if it could be realized, such a seal structure may cause damage to the surface of the elongated body. moreover,
It is necessary to prepare a seal structure with a shape that matches the cross-sectional shape of the elongated object to be processed. Therefore, when the type of elongated object to be processed is changed, it is not possible to respond quickly.

The pores provided in the partition wall eliminate the drawbacks of the airtight seal structure as described above. The ratio of the cross-sectional area of the pores to the cross-sectional area of the elongated body is preferably within the range of 1.1 to 25. If this ratio is smaller than 1°1, the pores and the elongated body will come into contact with each other, which may damage the substrate before coating or the thin film after coating. In addition, if the above ratio is greater than 25, the amount of gas (air, reaction gas, atmosphere forming gas) flowing through the pores will increase, and the degree of vacuum will not be stable or the desired degree of vacuum will not be reached. .

In order to better suppress the outflow of reaction gases and vaporized substances from the reaction chamber, it is desirable to constantly supply an inert gas to each preliminary chamber.

A coating device for a long body according to another aspect of the present invention coats a long body that continuously moves between a supply means and a recovery means arranged in the atmosphere by a vapor phase growth method. Form a covering layer. This coating device for a long body has an inlet preliminary chamber having an inlet hole that serves as an inlet passage for the long body sent out from the supply means, and an exit hole that serves as a six-port passage for the long body toward the recovery means. Exit reserve room,
a reaction chamber located between the inlet preliminary chamber and the 8-port preliminary chamber;
A partition wall that separates the reaction chamber from each preliminary chamber and has pores that serve as a passage for the continuously moving elongated body, and a partition wall that forms a coating layer on the surface of the elongated body within the reaction chamber. and an inert gas supply means for supplying inert gas to each preparatory chamber.

In the coating apparatus configured as described above, since the supply means and the recovery means are arranged in the atmosphere, the length of the elongated body on which thin films are continuously formed can be infinitely increased. On the other hand, in the coating apparatus shown in FIG. 8, the supply roll 38 and the take-up roll 39
Since the metal wire 40 is placed in the vacuum chamber 30, there is a restriction on the length of the metal wire 40 on which the thin film is formed.

Since inert gas is constantly supplied to each preliminary chamber during thin film formation, it is possible to prevent atmospheric air from entering each preliminary chamber. In turn, it is possible to prevent atmospheric air from entering the reaction chamber.

The inlet prechamber communicates with the atmosphere through the inlet hole, and the outlet prechamber communicates with the atmosphere through the outlet hole.

In order to better suppress the intrusion of air into each preparatory chamber, it is desirable that the ratio of the cross-sectional area of the inlet hole and the outlet hole to the cross-sectional area of the elongated body be within the range of 1.1 to 25. If this ratio is smaller than 1°1, the pores and the elongated body will come into contact with each other, which may damage the substrate before coating or the thin film after coating. If the ratio is greater than 25, the amount of air flowing through the pores increases, and the degree of vacuum becomes unstable or fails to reach the desired degree of vacuum.

In order to better suppress the outflow of reaction gases and vaporized substances from the reaction chamber, it is desirable that the ratio of the cross-sectional area of the pores to the cross-sectional area of the elongated body be within the range of 1.1 to 10.

In yet another aspect of the invention, by means of a coating apparatus comprising an inlet prechamber, a reaction chamber and an outlet prechamber communicating with each other through pores to be passages in the elongated body,
A coating method for forming a coating layer on the surface of a long body is disclosed. This coating method involves the steps of continuously moving the elongated body from the inlet preliminary chamber via the reaction chamber to the outlet preliminary chamber, and the pressure in the inlet preliminary chamber and the outlet preliminary chamber is lower than the pressure in the reaction chamber. and a step of forming a coating layer on the surface of the elongated body by a gas phase chemical reaction in a reaction chamber.

Through experiments, the inventor of the present invention found that when the pressure in the reaction chamber is lower than the pressure in the preliminary chamber, the adhesion of the thin film formed on the surface of the elongated body is extremely low, and the film is likely to peel off. When we investigated the cause of this, the following facts were discovered. If the pressure in the reaction chamber is higher than the pressure in the prechamber, a pressure gradient from the reaction chamber towards the prechamber occurs, so that the reaction gas flows out of the reaction chamber into the prechamber. As a result, unreacted gas and reaction product gas adhere to the surface of the elongated body in a relatively low temperature region located outside the predetermined thin film formation region. The presence of this adhesion layer makes it easier for the film to peel off.

Therefore, in the method of the present invention, the pressure in the inlet preliminary chamber and the outlet preliminary chamber is made higher than the pressure in the reaction chamber. As a result, unreacted gas and reaction product gas can be prevented from flowing out from the reaction chamber to the preliminary chamber, and a thin film with excellent adhesion can be formed on the surface of the elongated body.

In order to better suppress the outflow of unreacted gas and reaction product gas from the reaction chamber, it is desirable to supply an inert gas to the inlet preliminary chamber and the outlet preliminary chamber.

[Embodiments of the Invention] Example 1 Using the plasma CVD apparatus shown in FIG.
A titanium nitride (T j N) film with a thickness of 5 μm was formed on the surface of an oxygen-free copper wire 59 with a thickness of 5 μm.

First, the schematic configuration of the device will be explained. Illustrated plasma C
The VD device. It includes an inlet preliminary chamber 5o, a reaction chamber 51, and an outlet preliminary chamber 52. The inlet preliminary chamber 50 and the reaction chamber 51 are separated by a distance W61. The reaction chamber 51 and the outlet preliminary chamber 52 are separated by a partition wall 62. Each of the partition walls 61 and 62 has pores 64 and 65 formed therein to serve as passages for the oxygen-free copper wire 59.

The supply roll 58 and the take-up roll 6o are placed in the atmosphere. The oxygen-free copper wire 59 continuously fed out from the supply roll 58 passes through the inlet preliminary chamber 50°, the reaction chamber 51 and the outlet preliminary chamber 52, and is collected by the take-up roll 60.

The inlet preliminary chamber 50 has an inlet hole 63 that serves as an inlet passage for the oxygen-free copper wire 59 fed from the supply roll 58. The outlet prechamber 52 has an outlet hole 66 to provide 80 passages of the oxygen-free copper wire 59 to the winding roll 60. The inlet preliminary chamber 50 includes two inlet side compartments 50a and 50b separated by a partition wall 67 having a pore 69 for passage of the oxygen-free copper wire 59. Similarly, the outlet preliminary chamber 52 has a cleavage hole 7 that serves as a passage for the oxygen-free copper wire 59.
Two outlet compartments 52a, 52b are provided, separated by a partition wall 68 having a diameter of 0. An inert gas is introduced through an inert gas introduction pipe 71 into the endmost inlet side compartment 50a that communicates with the atmosphere through the inlet hole 63.

An inert gas is also introduced through an inert gas introduction pipe 78 into the endmost outlet side compartment 52a which communicates with the atmosphere through the 80 hole 66.

The ratio of the cross-sectional area of the pores 64.65 of the partition walls 61.62 to the cross-sectional area of the oxygen-free copper wire 59 is 1.96. In addition, an inlet hole 63 and an outlet hole 66 for the oxygen-free copper wire 59
The ratio of the cross-sectional areas of is 2.56. In the figure, 53.54
．． 55, 56, and 57 are vacuum pumps, 72 is a reaction gas introduction pipe, 73 is a plasma generation device, 74.75 is a pair of flat plasma generation electrodes, and 76.77 is a heater.

It is also possible to use cylindrical electrodes instead of the pair of flat plate-shaped plasma generation electrodes 74 and 75.

Thin film formation using a plasma CVD apparatus having the structure shown in FIG. 1 was carried out under the following coating conditions.

Reaction gas: T i C14, H2, NH3 reaction temperature =
400° C. Reaction pressure + 0.5 Torr High frequency power = 300 W Coating time = 50 hours The operating procedure is as follows. First, supply roll 5
The oxygen-free copper wire 59 pulled out from the
It passed through the inside of the reaction chamber 51 and the outlet preliminary chamber 52, and was wound around a winding roll 601.

After that, entrance preliminary room 50. The reaction chamber 51 and the outlet preliminary chamber 52 were evacuated to a predetermined degree of vacuum, and it was confirmed that the pressure in the reaction chamber 51 became constant. Next, the temperature of the heaters 76 and 77 for heating the oxygen-free copper wire 59 was increased, and it was confirmed that the ambient temperature in the reaction chamber 51 reached a predetermined temperature. after that,
A reaction gas and a carrier gas were introduced into the reaction chamber from the reaction gas introduction pipe 72, and the pressure inside the reaction chamber 51 was set to 0.5 Torr.

Nitrogen gas is introduced at a flow rate of 1000 cc/min into the inlet side compartment 50a and outlet side compartment 52a closest to the atmosphere side, and the degree of vacuum in each preliminary chamber 50.52 is set to 5 Torr.
It was set to Next, after turning on the power of the plasma generator 73 to generate plasma, the oxygen-free copper wire 59 was moved by a drive motor, and coating treatment was performed for 50 hours. In this way, a corrosion-resistant electric wire having a length of 50 m and uniformly coated with a TiN film having a thickness of 3 μm was obtained.

Example 2 Using an apparatus having the structure shown in Fig. 1, a stainless steel clad copper wire (SUS/Cu) with a diameter of 0.5 mm, in which the copper wire is clad with stainless steel, was coated under the following coating conditions. A ceramic electric wire was obtained by coating with a 5IO2 film. Although the obtained wire was bent to a diameter of 30 mm, the 5i02 film did not peel off.

Reaction gas S i C14, H2, CO2 Reaction temperature: 5
00°C Reaction pressure: 1.0 Torr High frequency type: 300 W Coating time: 30 hours Example 3 Using a vapor deposition apparatus with a structure as shown in FIG.
A zinc coating was continuously formed on a 5 mm Fe-42% Ni alloy wire 101.

The schematic configuration of the apparatus shown in FIG. 2 will be explained. The illustrated vapor deposition apparatus includes an inlet preliminary chamber 90, a reaction chamber 91, and an outlet preliminary chamber 92. The inlet preliminary chamber 90 and the reaction chamber 91 are separated by a partition wall 93 having pores 94 . The reaction chamber 91 and the outlet preliminary chamber 92 are separated by a partition wall 9 having pores 96.
Separated by 5. The entrance preliminary chamber 90 is Fe-
It has an inlet hole 97 that serves as a passage for the 42% Ni alloy wire 101, and the outlet preliminary chamber 92 has an outlet hole 98. The entrance preliminary chamber 90 includes two entrance compartments 90a and 90b separated by a partition wall 103. The exit preliminary chamber 92 includes two exit compartments 92a and 92b separated by a partition wall 102. An inlet compartment 90 communicating with the atmosphere through an inlet hole 97 and an outlet hole 98
Inert gas is introduced into the compartments 92a and 92a on the outlet side through inert gas introduction pipes 105 and 104.

The supply roll 99 and the take-up roll 100 are placed in the atmosphere. F continuously fed out from the supply roll 99
The e-42% Ni alloy wire 101 passes through an inlet preliminary chamber 90, a reaction chamber 91 and an outlet preliminary chamber 92, and is then delivered to a supply roll 100.
It is wound up. In the reaction chamber 91, four crucibles 108 storing molten zinc and a heater 107 for evaporating the molten zinc are arranged. 4 crucibles 108
The positional relationship between the wire and the Fe-42%Ni alloy wire 101 is shown in FIG.

The ratio of the cross-sectional area of the pores 94 and 96 to the cross-sectional area of the Fe-42%Ni alloy wire was 1.56. Fe-
Entrance hole 97 for cross-sectional area of 42% Ni alloy wire 101
The ratio of the cross-sectional area of the outlet hole 98 and the cross-sectional area of the outlet hole 98 was 1.56. In the figure, 110, 111, 112, 113, 114 are vacuum pumps.

Zinc was vapor-deposited on the Fe-42%Ni alloy wire 101 under the following processing conditions using the vapor deposition apparatus having the structure as described above.

Heater temperature: 2600° C. Pressure: 4.0XIO-' Torr Time: 10 hours No air was trapped during the deposition process, and good deposition could be performed.

Example 4 A thin film was formed using a plasma CVD apparatus having the structure shown in FIG. First, the schematic configuration of the plasma CVD apparatus shown in FIG. 4 will be explained.

The illustrated plasma CVD apparatus includes an entrance preliminary chamber 120,
It includes a reaction chamber 121 and an outlet preliminary chamber 122. The inlet preliminary chamber 120 and the reaction chamber 121 are separated by a partition wall 123 having pores 124 . The reaction chamber 121 and the outlet preliminary chamber 122 are separated by a partition wall 125 having pores 126.

A supply roll 127 is arranged in the entrance preliminary chamber 120,
A take-up roll 128 is arranged in the outlet preliminary chamber 122 .

The linear elongated body 140 that is continuously sent out from the supply roll 127 passes through the reaction chamber 121 to the take-up roll 128.
It is wound up.

Inert gas is introduced into the inlet preliminary chamber 120 and the outlet preliminary chamber 122 through active gas introduction pipes 129 and 130, respectively. In the reaction chamber 121, there is a reaction gas introduction pipe 1.
Reactant gas is introduced through 31. The illustrated plasma CVD apparatus further includes a plasma generation device 134, plasma generation electrodes 132, 133, and a heater 135.1.
36. A pair of plasma generation electrodes 132,1
Although 33 is a flat electrode, it is also possible to use a cylindrical electrode instead of such an electrode. Note that 137, 138, and 139 are vacuum pumps, respectively. - There are two reaction gas introduction pipes 131. Reaction gas introduction pipe 1
31 and the elongated body 140 are shown in FIGS. 5 and 6.
This becomes clear by referring to the figure.

The ratio of the cross-sectional area of the pores 124° 126 to the cross-sectional area of the elongate body 140 is preferably in the range of 1.1-10. Further, the pressure in each preliminary chamber 120° 122 is set to be higher than the pressure in the reaction chamber 121. The pressure difference is set to be at least 0.01 Torr or more.

Preferably, the pressure difference is 1.0 Torr or more.

By making the pressure in each preliminary chamber 120, 122 higher than the pressure in the reaction chamber 121, the flow pressure of unreacted gas or reaction product gas in the reaction chamber 121 can be prevented. If the pressure difference is 0.01 Torr or less, such gas outflow prevention effect becomes small.

Using a plasma CVD apparatus having the structure shown in FIG. 4, a diameter of 1.8. Titanium nitride (TiN
) coating was performed. The operating procedure is as follows.

First, an oxygen-free copper wire with a diameter of 1.8 mm is placed on the supply roll 12.
7 and the take-up roll 1 via the reaction chamber 121.
I wrapped it around 28. Thereafter, the inlet preliminary chamber 120, the reaction chamber 121, and the outlet preliminary chamber 122 were evacuated to a predetermined degree of vacuum, and it was confirmed that the pressure in the reaction chamber 121 was constant. Heater 135 for heating oxygen-free copper wire 140
, 136 to bring the atmospheric temperature inside the reaction chamber 121 to a predetermined temperature. Thereafter, a reaction gas and a carrier gas are introduced into the reaction chamber from the gas introduction pipe 131, and a predetermined pressure Q, 8
It was set to Torr. In the inlet preliminary chamber 120 and the outlet preliminary chamber 122, an inert gas introduction pipe 129,
Argon gas was introduced through 130 to increase the pressure in each preliminary chamber to l, QT.

It was set to rr.

Thereafter, the plasma generator 134 was powered on to generate plasma, and then the oxygen-free copper wire 140 was moved by a drive motor to perform coating for 50 hours.

In this way, an electric wire was obtained in which the surface of an oxygen-free copper wire having a diameter of 1.3 mm was uniformly coated with a TiN film having a thickness of 3 μm. For confirmation, coating conditions are listed below.

Reaction gas: T t CLa, H2, NH3 Reaction temperature = 500°C Reaction pressure 0.8 Torr High frequency electric power 300 W Coating time: 50 hours To investigate the thickness of the TiN film on the wire obtained as described above The wire was embedded in resin, and the cross section was observed using an optical microscope. As a result, it was confirmed that the film thickness was 5±01.2 μm. This electric wire was wound around rods of various diameters and a film peeling test was performed. As a result, 10m
No peeling of the film occurred for bending up to m.

Example 5 Using a plasma CVD apparatus having the structure shown in FIG. 4, a stainless steel clad copper wire (SUS/
A 5iO9 film was formed around the Cu ) to obtain a ceramic electric wire. The pressure in each preliminary chamber 120° 122 was set to be higher than the pressure in the reaction chamber 121 by 0°02 Torr. Other coating conditions are as follows.

Reaction gas: 5iC14, H2, CO2 Reaction temperature: 600°C Reaction pressure: 2 Torr Coating time: 10 hours A bending test with a diameter of 30 mm was performed on the wire obtained as described above, but the film did not peel off. There wasn't.

[Brief explanation of the drawing]

FIG. 1 is a diagram schematically showing a coating apparatus that is an embodiment of the present invention. FIG. 2 is a diagram schematically showing a vapor deposition apparatus according to another embodiment of the present invention. FIG. 3 is an illustrative view of the reaction chamber of the vapor deposition apparatus shown in FIG. 2, viewed from above. FIG. 4 is a diagram schematically showing a coating apparatus according to still another embodiment of the present invention. FIG. 5 is an illustrative view taken along line V-V in FIG. 4. 6 is an illustrative view taken along line VI-VI in FIG. 4. FIG. FIG. 7 is a diagram schematically showing a conventional semi-continuous coating apparatus. FIG. 8 is a diagram schematically showing a conventional roll-to-roll coating apparatus. In the figure, 50 is an inlet preliminary chamber, 51 is a reaction chamber, 52 is an outlet preliminary chamber, 58 is a supply roll, 59 is an oxygen-free copper wire, 6
0 is a winding roll, 61.62 is a partition wall, 63 is an inlet hole, 6
4.65 is a pore, 66 is an exit hole, 67.68 is a partition wall,
69.70 is a pore, 71 is an inert gas introduction pipe, 72 is a reactive gas introduction pipe, 73 is a plasma generator, 74.75 is a plasma generation electrode, 76.77 is a heater, 78 is an inert gas introduction pipe shows. Patent applicant: Sumitomo Electric Industries, Ltd., -1 (and 2 others) -=”- j 50: Entrance + Minute 51: Eta room 52: Exit 1-Itti 58: Iy Itogo 0-Rule 61. 62: Shima 63: Person 01 Mi 64.65: Koidego Otsu 66: De D'+L 67.68: I110,000 wall 69.70: Spear Q [L Figure 3 131 Figure 6 Figure 8

Claims (19)

[Claims] (1) Vapor phase growth is performed in the reaction chamber on a long body that is equipped with an inlet preliminary chamber, a reaction chamber, and an outlet preliminary chamber, and moves continuously from the inlet preliminary chamber via the reaction chamber to the outlet preliminary chamber. In the coating device for a long object that forms a surface coating layer by a method, the reaction chamber and each of the preparatory chambers are separated by a partition wall, and the partition wall serves as a passage for the continuous movement of the long object. 1. A coating device for a long body, characterized in that the pores have a cross-sectional area larger than the cross-sectional area of the long body. (2) The coating device for an elongated body according to claim 1, wherein the ratio of the cross-sectional area of the pores to the cross-sectional area of the elongated body is within the range of 1.1 to 25. (3) The coating apparatus for a long body according to claim 1 or 2, further comprising an inert gas supply means for supplying inert gas to each of the preliminary chambers. (4) Any one of claims 1 to 3, comprising: a reaction chamber vacuum pump for creating a reduced pressure atmosphere in the reaction chamber; and a preliminary chamber vacuum pump for creating a reduced pressure atmosphere in each of the preliminary chambers. The coating device for long bodies described above. (5) The coating device for an elongated body according to any one of claims 1 to 4, further comprising a chemical vapor deposition means for forming a coating layer on the surface of the elongated body by a gas phase chemical reaction in the reaction chamber. (6) The coating device for a long body according to claim 5, wherein the chemical vapor deposition means is a plasma CVD device. (7) The coating device for an elongated body according to any one of claims 1 to 6, further comprising a heating means for heating the elongated body in the reaction chamber. (8) A coating device for a long body that forms a surface coating layer by vapor phase growth on a long body that continuously moves between a supply means and a recovery means arranged in the atmosphere, , an inlet pre-chamber having an inlet hole that should serve as an inlet passage for the elongated body sent out from the supply means, an outlet pre-chamber having an outlet hole that should serve as an outlet passage for the elongated body heading toward the collecting means; and the inlet. A reaction chamber disposed between the preparatory chamber and the exit preparatory chamber, and a pore for separating the reaction chamber and each of the preparatory chambers and serving as a passage for a continuously moving elongated body. a membrane growth means for forming a coating layer on the surface of the elongated body within the reaction chamber; and an inert gas supply means for supplying inert gas to each of the preliminary chambers. Coating device for ulnar body. (9) The coating device for an elongated body according to claim 8, wherein the ratio of the cross-sectional area of the pores to the cross-sectional area of the elongated body is within the range of 1.1 to 25. (10) The coating device for an elongated body according to claim 8 or 9, wherein the ratio of the cross-sectional area of the inlet hole and the outlet hole to the cross-sectional area of the elongated body is within the range of 1.1 to 25. (11) Any one of claims 8 to 10, comprising: a reaction chamber vacuum pump for creating a reduced pressure atmosphere in the reaction chamber; and a preliminary chamber vacuum pump for creating a reduced pressure atmosphere in each of the preliminary chambers. The coating device for long bodies described above. (12) Claims 8 to 1, wherein the film growth means forms a coating layer on the surface of the elongated body by a gas phase chemical reaction.
1. The coating device for a long body according to any one of 1. (13) The inlet preliminary chamber includes a plurality of inlet compartments separated by partition walls having pores that are to serve as passages for elongated bodies, and the outlet preliminary chambers that are to serve as passages for elongated bodies. a plurality of outlet compartments separated by partition walls having pores, the inert gas supply means communicating with the atmosphere through the inlet aperture; The coating device for a long object according to any one of claims 8 to 12, wherein an inert gas is supplied to the outlet-side compartment at the end communicating with the atmosphere. (14) A coating method in which a coating layer is formed on the surface of a long body using a coating device equipped with an inlet preliminary chamber, a reaction chamber, and an outlet preliminary chamber that communicate with each other through pores that are to become passages of the long body. A step of continuously moving the elongated body from the inlet preliminary chamber via the reaction chamber to the outlet preliminary chamber, and making the pressure in the inlet preliminary chamber and the outlet preliminary chamber higher than the pressure in the reaction chamber. A method for coating a long body, comprising: a step of forming a coating layer on the surface of the long body by a gas phase chemical reaction in a reaction chamber. (15) The coating method for a long body according to claim 14, comprising the step of supplying an inert gas to the inlet preliminary chamber and the outlet preliminary chamber. (16) The coating method for an elongate body according to claim 14 or 15, comprising the step of heating the elongate body located in the reaction chamber. (17) The coating method for a long body according to any one of claims 14 to 16, comprising a step of causing a plasma discharge from the reaction gas introduced into the reaction chamber. (18) Claims 14 to 1, wherein the elongated body is a metal wire.
7. The method for coating a long body according to any one of 7. (19) The pressure difference between each preliminary chamber and the reaction chamber is 0.
The coating method for a long object according to any one of claims 14 to 18, wherein the pressure is 0.01 Torr or more.