JPH04163950A - Resin sealed semiconductor device - Google Patents
Resin sealed semiconductor deviceInfo
- Publication number
- JPH04163950A JPH04163950A JP2291211A JP29121190A JPH04163950A JP H04163950 A JPH04163950 A JP H04163950A JP 2291211 A JP2291211 A JP 2291211A JP 29121190 A JP29121190 A JP 29121190A JP H04163950 A JPH04163950 A JP H04163950A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- lead frame
- sealed
- semiconductor element
- photosensitive resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011347 resin Substances 0.000 title claims abstract description 67
- 229920005989 resin Polymers 0.000 title claims abstract description 67
- 239000004065 semiconductor Substances 0.000 title claims abstract description 56
- 238000007789 sealing Methods 0.000 abstract description 21
- 238000000059 patterning Methods 0.000 abstract description 9
- 230000008646 thermal stress Effects 0.000 abstract description 5
- 239000003822 epoxy resin Substances 0.000 abstract description 4
- 229920000647 polyepoxide Polymers 0.000 abstract description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052709 silver Inorganic materials 0.000 abstract description 3
- 239000004332 silver Substances 0.000 abstract description 3
- 230000015556 catabolic process Effects 0.000 abstract 1
- 230000008642 heat stress Effects 0.000 abstract 1
- 230000035515 penetration Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 description 13
- 230000003287 optical effect Effects 0.000 description 5
- 238000005336 cracking Methods 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 238000001721 transfer moulding Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229920002454 poly(glycidyl methacrylate) polymer Polymers 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- UOCLXMDMGBRAIB-UHFFFAOYSA-N 1,1,1-trichloroethane Chemical compound CC(Cl)(Cl)Cl UOCLXMDMGBRAIB-UHFFFAOYSA-N 0.000 description 1
- ILBBNQMSDGAAPF-UHFFFAOYSA-N 1-(6-hydroxy-6-methylcyclohexa-2,4-dien-1-yl)propan-1-one Chemical compound CCC(=O)C1C=CC=CC1(C)O ILBBNQMSDGAAPF-UHFFFAOYSA-N 0.000 description 1
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- OYUNTGBISCIYPW-UHFFFAOYSA-N 2-chloroprop-2-enenitrile Chemical compound ClC(=C)C#N OYUNTGBISCIYPW-UHFFFAOYSA-N 0.000 description 1
- 241000602850 Cinclidae Species 0.000 description 1
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 1
- 239000005062 Polybutadiene Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000004760 aramid Substances 0.000 description 1
- 229920003235 aromatic polyamide Polymers 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- HNEGQIOMVPPMNR-IHWYPQMZSA-N citraconic acid Chemical compound OC(=O)C(/C)=C\C(O)=O HNEGQIOMVPPMNR-IHWYPQMZSA-N 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- WGXGKXTZIQFQFO-CMDGGOBGSA-N ethenyl (e)-3-phenylprop-2-enoate Chemical compound C=COC(=O)\C=C\C1=CC=CC=C1 WGXGKXTZIQFQFO-CMDGGOBGSA-N 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 238000000016 photochemical curing Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 238000004382 potting Methods 0.000 description 1
- 239000012487 rinsing solution Substances 0.000 description 1
- 239000005060 rubber Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000001029 thermal curing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］−
本発明は、半導体素子を有し、樹脂封止により封止が行
われる樹脂封止型半導体装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a resin-sealed semiconductor device that includes a semiconductor element and is encapsulated with resin.
［従来の技術］
半導体装置の封止方法の一つに、半導体素子等を樹脂に
よって封止する、いわゆるモールドパッケージがある。[Prior Art] One of the methods for sealing semiconductor devices is a so-called mold package in which semiconductor elements and the like are sealed with resin.
・
第６図はモールドパッケージによって封止を行った樹脂
封止型半導体装置の従来例を示す断面図である。図にお
いて、１は封止体たる樹脂、２は半導体素子、３はリー
ドフレーム、４は半導体素子２とリードフレーム３とを
接続させるボンディングワイヤである。- FIG. 6 is a sectional view showing a conventional example of a resin-sealed semiconductor device sealed using a mold package. In the figure, 1 is a resin as a sealing body, 2 is a semiconductor element, 3 is a lead frame, and 4 is a bonding wire for connecting the semiconductor element 2 and the lead frame 3.
しかしながら、この種のパッケージは封止用樹脂１とリ
ードフレーム３の界面において使用中クラックが発生し
て、封止機能が阻害されるという欠点があった。この対
策として、′ｔＳ７図（実公昭６２−２３０９７号公報
等）に示されているように、半導体素子２の載置されて
いるリードフレーム３の下面部に、ボッティング法によ
り軟買樹脂層５を形成するという方法が考えられてきた
。However, this type of package has the drawback that cracks occur during use at the interface between the sealing resin 1 and the lead frame 3, impeding the sealing function. As a countermeasure against this, as shown in Figure 'tS7 (Japanese Utility Model Publication No. 62-23097, etc.), a soft resin layer is applied by a botting method to the lower surface of the lead frame 3 on which the semiconductor element 2 is mounted. 5 has been considered.
［発明が解決しようとする課題］
従来技術による樹脂封止型半導体装置は、半導体素子の
載置されているリードフレームの下面では、クラックの
発生を防止することができるが、以下に示すような問題
点を有している。[Problems to be Solved by the Invention] In the resin-sealed semiconductor device according to the prior art, cracks can be prevented from occurring on the lower surface of the lead frame on which the semiconductor element is mounted, but the following problem occurs. There are problems.
（１）封止用樹脂とリードフレームの界面からの水分浸
入により、半導体装置の信頼性を著しく低下させる。(1) Moisture intrusion from the interface between the sealing resin and the lead frame significantly reduces the reliability of the semiconductor device.
（２）軟質樹脂層の形成されていない、封止用樹脂とリ
ードフレームの界面の接着力が弱く、装置実装時などに
おける温度変化や、熱ストレスの印加によって、クラッ
クや剥れが生じる。(2) The adhesive force at the interface between the sealing resin and the lead frame, where a soft resin layer is not formed, is weak, and cracks and peeling occur due to temperature changes or application of thermal stress during device mounting.
（３）半導体素子の載置されるリードフレーム裏面にボ
ッティングで軟質樹脂を滴下する為、軟質樹脂が半導体
素子の搭載されるべき面にまでまわりこみ、半導体素子
とリードフレームとの接着を阻害する要因となる。(3) Since the soft resin is dropped by botting on the back side of the lead frame on which the semiconductor element is mounted, the soft resin wraps around the surface where the semiconductor element is to be mounted, inhibiting the adhesion between the semiconductor element and the lead frame. It becomes a factor.
本発明の目的は、上記問題点を解決し、高品質で、高信
頼性の樹脂封止型゛半導体装置を提供することにある。An object of the present invention is to solve the above-mentioned problems and provide a high-quality, highly reliable resin-sealed semiconductor device.
ｃａｎを解決するための手段］
本発明による樹脂封止型半導体装置は、半導体素子を有
し、樹脂封止により封止が行われる樹脂封止型半導体装
置において、リードフレーム表面の樹脂封止される部分
に、感光性樹脂をパターニングすることで、樹脂封止部
内の半導体素子載置部とワイヤボンディング部を除いた
該リードフレーム表面に樹脂膜を形成したことを特徴と
する。Means for Solving the Problem] A resin-sealed semiconductor device according to the present invention has a semiconductor element and is encapsulated by resin encapsulation. The present invention is characterized in that a resin film is formed on the surface of the lead frame excluding the semiconductor element mounting part and the wire bonding part in the resin sealing part by patterning a photosensitive resin on the part where the lead frame is attached.
［作用コ
本発明によれば、リードフレーム表面の樹脂封止される
部分に、感光性樹脂をパターニングし、該リードフレー
ム表面の半導体素子載置部とワイヤボンディングを除い
た部分に樹脂膜を形成することにより、封止用樹脂とリ
ードフレームの界面に発生するクラックを防止すること
ができ、樹脂封止部内の半導体素子載置部とワイヤボン
ディング部を除いたリードフレーム表面において、リー
ドフレームと封止用樹脂との密着性を向上させることが
できる。 ゛
以下に、本発明を図面を用いて説明する。[Operations] According to the present invention, a photosensitive resin is patterned on the portion of the lead frame surface to be sealed with resin, and a resin film is formed on the portion of the lead frame surface excluding the semiconductor element mounting portion and wire bonding. By doing so, it is possible to prevent cracks from occurring at the interface between the sealing resin and the lead frame. Adhesion with the stopper resin can be improved.゛The present invention will be explained below using the drawings.
第１図は、本発明により製造された半導体装置の断面図
であり、第２図〜第５図は、本発明に用いたリードフレ
ームに感光性樹脂をパターニングする工程を説明する断
面図である。FIG. 1 is a cross-sectional view of a semiconductor device manufactured according to the present invention, and FIGS. 2 to 5 are cross-sectional views illustrating the process of patterning a photosensitive resin on a lead frame used in the present invention. .
なお、第１図から第５図において、＠ｅ図および′ｓ７
図に示した構成部材と同一の部材については、同一番号
を付し説明を略す。In addition, in Figures 1 to 5, @e figure and 's7
Components that are the same as those shown in the figures are designated by the same numbers and descriptions thereof will be omitted.
すなわち、６は感光性樹脂をパターニングした樹脂膜で
あり、７はパターニング前の感光性樹脂膜であり、８は
感光性樹脂ｗＡ７をパターニングする際に用いるマスク
である。That is, 6 is a resin film obtained by patterning a photosensitive resin, 7 is a photosensitive resin film before patterning, and 8 is a mask used when patterning the photosensitive resin wA7.
＄３図に示すように、リードフレーム３の表面に感光性
樹脂、たとえばネガ型フォトレジストが塗布等の方法に
より積層される。As shown in FIG. 3, a photosensitive resin such as a negative photoresist is laminated on the surface of the lead frame 3 by coating or the like.
感光性樹脂としては、リードフレーム３および封止用樹
脂１との密着性の良い樹脂が適宜選択され、一般に用い
られるレジスト材料であり、ポジ型よりもネガ型が好ま
しく、たとえば環状ゴム系、ポリ桂皮酸ビニル系、ポリ
グリシジルメタクリレート、ポリグリシジルメタクリレ
ート−〇〇−エチルアクリレート、ポリグリシジルメタ
クリレートのメチルマレイン酸添加物、クロルメチル化
ポリスチレン、ポリジアリールオルソフタレート、エポ
キシ化ポリブタジェン、ポリエチルアクリレート−ＣＯ
−αクロロアクリロニトリル、ポリスチレン−テトラチ
オフルバレン系、ポリメチルメタクリレート・アクリル
酸系等のレジスト材料を挙げることができ、特に好まし
くは耐湿性にもすぐれる感光性ポリアミノ系樹脂、たと
えば、感光性基をその分子内に持つ芳香族系のポリアミ
ド樹脂およびポリイミド樹脂等が挙げられる。As the photosensitive resin, a resin with good adhesion to the lead frame 3 and the sealing resin 1 is appropriately selected, and it is a commonly used resist material, and is preferably negative type than positive type, such as annular rubber type, polyester resin, etc. Vinyl cinnamate, polyglycidyl methacrylate, polyglycidyl methacrylate-〇〇-ethyl acrylate, methylmaleic acid additive of polyglycidyl methacrylate, chloromethylated polystyrene, polydiaryl orthophthalate, epoxidized polybutadiene, polyethyl acrylate-CO
- Resist materials such as α-chloroacrylonitrile, polystyrene-tetrathiofulvalene, and polymethyl methacrylate/acrylic acid may be mentioned, and particularly preferred are photosensitive polyamino resins with excellent moisture resistance, such as photosensitive group Examples include aromatic polyamide resins and polyimide resins that have in their molecules.
感光性樹脂の形成手段としては、たとえばデイツプ、ス
ピンナー、ロールコータ−等の塗布装置が挙げられるが
、感光性樹脂膜をリードフレーム上に形成できる手段で
あれば何でもよい。Examples of means for forming the photosensitive resin include coating devices such as dippers, spinners, and roll coaters, but any means that can form a photosensitive resin film on the lead frame may be used.
また、感光性樹脂の厚さとしては０．５〜２０μｍ程度
が好ましく、゛１〜５μｍ程度がより好ましい。Further, the thickness of the photosensitive resin is preferably about 0.5 to 20 μm, more preferably about 1 to 5 μm.
次いで、感光性樹脂膜７を光硬化するのに必要な露光量
で、リードフレーム３の樹脂封止部のうち、半導体素子
搭載部およびワイヤボンディング部を遮光するパターン
マスク８を介して露光、現像することで感光性樹脂ＷＡ
７をパターニングする。Next, the semiconductor element mounting part and the wire bonding part of the resin sealing part of the lead frame 3 are exposed and developed through a pattern mask 8 that shields the semiconductor element mounting part and the wire bonding part from light at an exposure amount necessary to photocure the photosensitive resin film 7. By doing this, photosensitive resin WA
Pattern 7.
しかる後、熱硬化を行うことにより、第５図に示すよう
に、樹脂封止されるリードフレーム３の表面の半導体素
子載置部とワイヤボンディング部を除いた場所に感光性
樹脂膜６が形成される。Thereafter, by thermal curing, a photosensitive resin film 6 is formed on the surface of the lead frame 3 to be resin-sealed except for the semiconductor element mounting area and the wire bonding area, as shown in FIG. be done.
このリードフレーム３を用い、アイランド部９に半導体
素子２をダイボンディングし、該半導体素子２の電極と
リードフレームを、ボンディングワイヤー４によりワイ
ヤーボンディングする。Using this lead frame 3, the semiconductor element 2 is die-bonded to the island portion 9, and the electrodes of the semiconductor element 2 and the lead frame are wire-bonded using the bonding wire 4.
そして、リードフレーム３の中央部を封止用樹脂工で封
止することにより、′Ｍ１図に示すようなｌＢ脂封止型
半導体装置を得ることができる。Then, by sealing the central portion of the lead frame 3 with a sealing resin, an IB resin-sealed semiconductor device as shown in Figure 'M1 can be obtained.
封止に用いられる樹脂としては、半導体装置の封入に用
いることができるものであれば何でもよいが、たとえば
、エポキシ樹脂、シリコン樹脂、フェノール樹脂、ポリ
イミド樹脂等が挙げられる。The resin used for sealing may be any resin as long as it can be used for encapsulating a semiconductor device, and examples thereof include epoxy resin, silicone resin, phenol resin, polyimide resin, and the like.
また、封止方法としては、たとえばキャスティング法、
インチエクシコン法、ポツティング法等が挙げられるが
、好ましくはトランスファーモールディング法が挙げら
れる。In addition, as a sealing method, for example, a casting method,
Examples include the inch excicon method and the potting method, but preferably the transfer molding method is used.
［実施例コ 以下に本発明の実施例を示す。[Example code] Examples of the present invention are shown below.
（実施例１）
リードフレーム上に感光性樹脂（商品名：ＰＡ−１００
０Ｃ１宇部興産社製）をデイツプ法により、リードフレ
ーム３の表面に３μｍの膜厚に塗布した。(Example 1) Photosensitive resin (product name: PA-100) was placed on the lead frame.
0C1 (manufactured by Ube Industries, Ltd.) was applied to the surface of the lead frame 3 to a thickness of 3 μm using a dip method.
次に、８０℃、３０分間のブリベータを行った後、形成
しようとするパターン形状に対応したパターンマスク８
を介して、高圧水銀灯にてＰＡ−１０００Ｃの光硬化に
必要な露光量にて露光した。Next, after performing blebbing at 80°C for 30 minutes, a pattern mask 8 corresponding to the pattern shape to be formed is formed.
The sample was exposed to light using a high-pressure mercury lamp at an exposure amount necessary for photocuring PA-1000C.
露光終了後、感光性樹脂膜７を溶解する専用現像液（Ｎ
−メチル−２−ピロリドンを主成分とする現像液）にて
現像し、専用リンス液（１，１，１トリクロロエタンを
主成分とするリンス液）で処理した後、１５０℃、３０
分間のボストベークを行い、パターン形状を有した感光
性樹脂膜６を形成した。After the exposure, a special developer (N
- Developed with a developer containing methyl-2-pyrrolidone as the main component) and treated with a special rinse solution (rinsing solution containing 1,1,1 trichloroethane as the main component), then heated at 150℃ for 30 minutes.
Bost baking was performed for a minute to form a photosensitive resin film 6 having a patterned shape.
得られたリードフレーム３のアイランド部９に銀ペース
トを用い半導体素子２をダイボンディングし、リードフ
レーム３と半導体素子２の電極を金ワイヤ−４でワイヤ
ーボンディングを行フた後、トランスファーモールディ
ング法によりエポキシ樹脂１で封止した。The semiconductor element 2 is die-bonded to the island portion 9 of the obtained lead frame 3 using silver paste, and the electrodes of the lead frame 3 and the semiconductor element 2 are wire-bonded with a gold wire 4, and then transferred by a transfer molding method. It was sealed with epoxy resin 1.
得られた樹脂封止型半導体装置は、封止用樹脂とリード
フレームの密着性が良く、装置実装時における温度変化
や熱ストレスの印加時に、クラックや剥れの発生は無か
った。The resulting resin-sealed semiconductor device had good adhesion between the sealing resin and the lead frame, and no cracking or peeling occurred during temperature changes or application of thermal stress during device mounting.
また、耐湿性が向上したために水分侵入による半導体素
子の破壊等はおこらなくなった。In addition, since moisture resistance has been improved, damage to semiconductor elements due to moisture intrusion no longer occurs.
さらに、リードフレームの樹脂封止部の半導体素子載置
部およびワイヤーボンディング部に樹脂膜が形成されな
いため、リードフレームと半導体素子が剥れたり、ワイ
ヤーとリードフレームが剥れたりすることが無くなった
。Furthermore, since no resin film is formed on the semiconductor element mounting area and the wire bonding area of the resin-sealed part of the lead frame, there is no longer any possibility that the lead frame and the semiconductor element will peel off or the wire and the lead frame will separate. .
（実施例２）
リードフレーム上に感光性ポリイミド（商品名：セミコ
ファイン、東し社製）をデイツプ法により塗布し、１μ
ｍ厚の感光性樹脂１１！７を形成し、実施例−１と同様
にして感光性樹脂膜６を形成した。(Example 2) Photosensitive polyimide (trade name: Semicofine, manufactured by Toshisha Co., Ltd.) was coated on the lead frame by the dip method, and
A photosensitive resin film 11!7 having a thickness of m was formed, and a photosensitive resin film 6 was formed in the same manner as in Example-1.
得られたリードフレーム３のアイランド部９に銀ペース
トを用い光半導体素子２をダイボンディングし、リード
フレーム３と光半導体素子２の電極を金ワイヤ−４でワ
イヤーボンディングを行フた後、トランスファーモール
ディング法によりエポキシ樹脂１で封止した。The optical semiconductor element 2 is die-bonded to the island portion 9 of the obtained lead frame 3 using silver paste, and the electrodes of the lead frame 3 and the optical semiconductor element 2 are wire-bonded with a gold wire 4, and then transfer molding is performed. It was sealed with epoxy resin 1 by the method.
得られた樹脂封止型半導体装置は、封止用樹脂とリード
フレームの密着性が良く、装置実装時における温度変化
や熱ストレスの印加時に、クラックや剥れの発生は無か
った。The resulting resin-sealed semiconductor device had good adhesion between the sealing resin and the lead frame, and no cracking or peeling occurred during temperature changes or application of thermal stress during device mounting.
また、耐湿性が向上したために水分侵入による光半導体
素子の破壊等はおこらなくなった。Furthermore, since the moisture resistance has been improved, destruction of the optical semiconductor element due to moisture intrusion no longer occurs.
ざらに、リードフレームの樹脂封止部の光半導体素子載
置部およびワイヤーボンディング部に樹脂膜が形成され
ないため、リードフレームと光半導体素子が剥れたり、
ワイヤーとリードフレームが剥れたりすることが無くな
った。In general, since a resin film is not formed on the optical semiconductor element mounting part and the wire bonding part of the resin-sealed part of the lead frame, the lead frame and the optical semiconductor element may peel off or
Wires and lead frames no longer peel off.
［発明の効果コ
本発明によれば、樹脂封止されるリードフレーム表面に
感光性樹脂をパターンニングすることで、樹脂封止部内
の半導体素子載置部とワイヤーボンディング部を除いた
リードフレーム表面に樹脂膜を形成するため、以下のよ
うな効果が得られる。[Effects of the Invention] According to the present invention, by patterning a photosensitive resin on the surface of a lead frame to be resin-sealed, the surface of the lead frame excluding the semiconductor element mounting part and the wire bonding part in the resin-sealed part is Since the resin film is formed on the surface, the following effects can be obtained.
樹脂封止部内のリードフレーム表面と封止樹脂の密着力
が向上したために、
（１）リード界面からの水分侵入を防ぐことができ、半
導体装置の信頼性が向上した。Since the adhesion between the lead frame surface and the sealing resin in the resin sealing section has been improved, (1) moisture can be prevented from entering from the lead interface, improving the reliability of the semiconductor device.
（２）装置実装時などにおける温度変化や熱ストレスの
印加時にも、ネラックや剥れの発生が全く無くなり、半
導体装置の品質と信頼性が向上した。(2) Even when temperature changes or thermal stress is applied during device mounting, there is no occurrence of cracking or peeling, improving the quality and reliability of the semiconductor device.
また、樹脂封止部内の半導体素子載置部およびワイヤー
ボンディング部には感光性樹脂膜が形成されていないの
で、
（３）半導体素子とリードフレームおよびボンディング
ワイヤーとリードフレームの剥れが無くなり、半導体装
置の品質と信頼性が向上した。In addition, since a photosensitive resin film is not formed on the semiconductor element mounting area and the wire bonding area within the resin sealing part, (3) there is no peeling between the semiconductor element and the lead frame, and between the bonding wire and the lead frame, and the semiconductor The quality and reliability of the equipment has improved.
以上説明したように、本発明によれば、高品質で高信頼
性の樹脂封止型半導体装置を提供することができる。As described above, according to the present invention, a high quality and highly reliable resin-sealed semiconductor device can be provided.
３４１図は、本発明による樹脂封止型半導体装置の実施
例を示す断面図である。
第２図から′ｔＳ５図は、リードフレームに感光性樹脂
膜をパターンニングする工程を示す断面図である。
＄６図および第７図は、従来技術による樹脂封止型半導
体装置の断面図である。
（符号の説明）
１・・・封止用樹脂、２・・・半導体素子、３，３°・
・・リードフレーム、４・・・ボンディングワイヤー、
５・・・軟質樹脂層、６．７・・・感光性樹脂膜、８・
・・パターンニングマスク、９・・・アイランド部。
第１図
第２図
第５図FIG. 341 is a sectional view showing an example of a resin-sealed semiconductor device according to the present invention. Figures 2 to 5 are cross-sectional views showing the process of patterning a photosensitive resin film on a lead frame. FIG. 6 and FIG. 7 are cross-sectional views of a resin-sealed semiconductor device according to the prior art. (Explanation of symbols) 1... Sealing resin, 2... Semiconductor element, 3,3°.
... Lead frame, 4... Bonding wire,
5... Soft resin layer, 6.7... Photosensitive resin film, 8.
...Patterning mask, 9...Island part. Figure 1 Figure 2 Figure 5
Claims (1)
脂封止型半導体装置において、リードフレーム表面の樹
脂封止される部分に、感光性樹脂をパターニングするこ
とで、樹脂封止部内の半導体素子載置部とワイヤボンデ
ィング部を除いた該リードフレーム表面に樹脂膜を形成
したことを特徴とする樹脂封止型半導体装置。In a resin-sealed semiconductor device that has a semiconductor element and is sealed with resin, the semiconductor inside the resin-sealed part is patterned with photosensitive resin on the resin-sealed part of the lead frame surface. 1. A resin-sealed semiconductor device characterized in that a resin film is formed on the surface of the lead frame except for an element mounting part and a wire bonding part.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2291211A JPH04163950A (en) | 1990-10-29 | 1990-10-29 | Resin sealed semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2291211A JPH04163950A (en) | 1990-10-29 | 1990-10-29 | Resin sealed semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04163950A true JPH04163950A (en) | 1992-06-09 |
Family
ID=17765904
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2291211A Pending JPH04163950A (en) | 1990-10-29 | 1990-10-29 | Resin sealed semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04163950A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003124406A (en) * | 2001-08-06 | 2003-04-25 | Denso Corp | Semiconductor device |
| JP2008288566A (en) * | 2007-04-20 | 2008-11-27 | Nec Electronics Corp | Semiconductor device |
| CN102201525A (en) * | 2010-03-25 | 2011-09-28 | Lg伊诺特有限公司 | Light emitting device package and lighting system having the same |
-
1990
- 1990-10-29 JP JP2291211A patent/JPH04163950A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003124406A (en) * | 2001-08-06 | 2003-04-25 | Denso Corp | Semiconductor device |
| JP2008288566A (en) * | 2007-04-20 | 2008-11-27 | Nec Electronics Corp | Semiconductor device |
| CN102201525A (en) * | 2010-03-25 | 2011-09-28 | Lg伊诺特有限公司 | Light emitting device package and lighting system having the same |
| JP2011205100A (en) * | 2010-03-25 | 2011-10-13 | Lg Innotek Co Ltd | Light-emitting element package and illumination system equipped with the same |
| US8309983B2 (en) | 2010-03-25 | 2012-11-13 | Lg Innotek Co., Ltd. | Light emitting device package and lighting system having the same |
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