JPH04162714A - Method and apparatus for manufacturing semiconductor device - Google Patents

Abstract

PURPOSE:To improve a yield of manufacture and performance by a construction wherein support plates being larger than a semiconductor substrate are arranged perpendicularly to the direction of exhaust and at intervals being equal to or shorter than the length of projection of the semiconductor substrate support plate outside the peripheral edge of the semiconductor substrate, and the semiconductor substrate is provided between these support plates. CONSTITUTION:Support plates being larger than a semiconductor substrate 11 are arranged perpendicularly to the direction of exhaust and at intervals being equal to or shorter than the length of projection of the semiconductor substrate support plate 12 outside the peripheral edge of the semiconductor substrate 11, and the semiconductor substrate 11 is provided between these support plates. Accordingly, the uniformity of a growth speed and an etching speed in the substrate and among the substrates can be improved and execution of a precise control on a semiconductor and a thin film such as an insulating film is enabled. Thereby a yield of manufacture of a semiconductor device and the performance thereof can be improved.

Description

[Detailed Description of the Invention] [Objective of the Invention] (Industrial Application Field) This invention relates to a method for manufacturing a semiconductor device, and in particular to a method for forming and processing thin films with good controllability and precision under reduced pressure. .

(Prior Art) As the performance of semiconductor devices increases, techniques for forming and processing thin films of semiconductors and insulating films with good uniformity are becoming increasingly important. Thin film formation and thin film processing under reduced pressure have advantages such as less contamination of impurities, good pattern step coverage, and ease of precise control of the thickness of the thin film.

In particular, thin film formation and thin film processing under reduced pressure have been conventionally performed on arsenic polysilicon, silicon nitride films, and the like.

A conventional manufacturing method and manufacturing apparatus will be explained with reference to FIGS. 7 and 8. -For example, when forming an arsenic polysilicon thin film on a semiconductor substrate by low pressure CVD method,
In the reaction chamber 201, which is a vacuum container of the vD device (Fig. 8),
As shown in FIG. 7, the semiconductor substrate 101 is placed on the substrate holder 1.
Semiconductor substrates 1 at both ends are arranged facing each other on
An auxiliary plate 102 is arranged on the outside of 01 and is installed inside.

A heating device 202 is provided outside the reaction chamber 201 so as to face and surround the group of semiconductor substrates.
1 is provided with a gas inlet 203 and an exhaust port 204.

An example of the manufacturing method is to heat the reaction chamber 201 to about 600° C. and exhaust it in the direction shown by the arrow in the figure using an exhaust pump (not shown), and then introduce a mixed gas of dichlorosilane and arsine into the reaction chamber by inhaling the mixture gas with the exhaust pump. Helium (not shown) is introduced into each side. An arsenic polysilicon thin film can be formed on a semiconductor substrate by setting the atmospheric pressure in the reaction chamber to about 10<-2 >atmospheres.

(Problems to be Solved by the Invention) In the conventional manufacturing method and manufacturing apparatus described above, significant non-uniformity occurs in the film thickness and sheet resistance within the substrate for multiple semiconductor substrates, and in extreme cases, the surface of the thin film There are serious problems such as clouding and failure to obtain the desired surface condition.

SUMMARY OF THE INVENTION In view of the above conventional problems, an object of the present invention is to provide an improved manufacturing method and manufacturing apparatus.

[Structure of the invention]

(Means for Solving the Problems) A semiconductor device manufacturing method according to the present invention includes a step of forming a thin film on a semiconductor substrate and processing the thin film in a reduced pressure atmosphere. are arranged perpendicularly to the exhaust direction and at an interval equal to or less than the protruding length of the semiconductor substrate support plate that the semiconductor substrate has on the outside of its periphery, and the semiconductor substrate is installed between these auxiliary plates.

Next, the semiconductor device manufacturing apparatus includes a semiconductor substrate support plate having a semiconductor substrate mounting mechanism and larger than the semiconductor substrate, the semiconductor substrate support plate facing each other, perpendicular to the exhaust direction, and the semiconductor substrate having an interval outside the periphery of the semiconductor substrate support plate. a semiconductor substrate support plate holder arranged so as to have a length equal to or less than the protrusion length of the semiconductor substrate support plate on the side; a vacuum container housing the semiconductor substrate support plate holder; and heating the semiconductor substrate supported by the semiconductor substrate support plate. It is characterized by being equipped with a device.

(Function) By applying the present invention, the uniformity of growth rate and etching rate within a substrate and between substrates can be greatly improved, so that precise control of thin films such as semiconductors and insulating films becomes possible.

(Example) Embodiments of the present invention will be described below with reference to the drawings.

First Embodiment The arrangement of a semiconductor substrate when forming an arsenic polysilicon thin film on a semiconductor substrate by the low pressure CVD method will be explained with reference to FIG. As shown in FIG. 1, a semiconductor substrate 11 is mounted on a support plate 12 by a mounting mechanism 1 shown in FIGS. 4(a) and 4(b).
3. - Supported by example three claws, this support plate 12 is mounted on a support plate holder 10. The support plate 12 is provided larger than the semiconductor substrate 11, and when the semiconductor substrate 11 is arranged approximately concentrically with the support plate 12, the protrusion length (b) outside the periphery of the semiconductor substrate (due to the size difference, - for example, the support plate The distance (a) between the support plates 12 is set to be smaller than (b).

Using the new arrangement described above, the reaction chamber is heated to about 600°C and thoroughly evacuated, and then a mixed gas of dichlorosilane and arsine is introduced into the reaction chamber, and helium is introduced into the intake side of the exhaust pump. The atmospheric pressure was set at about 10'''2 atm. In this way, it was possible to significantly improve the film thickness uniformity of the arsenic polysilicon thin film compared to the conventional arrangement (FIG. 7).

As a result of various experiments, the uniformity of the arsenic polysilicon thin film within the semiconductor substrate was determined by making the support plate 12 larger than the semiconductor substrate 11 and by increasing the size difference (b) between the support plate 12 and the semiconductor substrate 11.
), it was found that the improvement could be achieved by reducing the distance (a) between the support plates 12. For example, in the case of a=15■, the film thickness uniformity of arsenic polysilicon in a semiconductor substrate is shown in FIG. 6 when b is varied. It is the peripheral part film thickness/central part film thickness that shows the uniformity of film thickness for the semiconductor substrate in the figure. It is clear that this significantly improves the uniformity within the range of condition b>a.

Second Embodiment Another embodiment will be explained with reference to FIG. Figure 2 shows freon:r! Substrate holder 20 in the reaction chamber when chemically etching arsenic polysilicon in plasma under the condition of & element = 1 = 1. The arrangement state of the semiconductor substrate 21 and the support plate 22 is shown. Note that 23 in the figure is a support that connects between the support plates and between the support plates and the substrate holder. Then, the size difference (b) between the support plate 22 and the semiconductor substrate 21 and the support 22
By setting the relationship between the distance (a) as b>a, the etching uniformity within the semiconductor substrate 21 could be significantly improved.

In the embodiments of the present invention, the case of forming a thin film of arsenic polysilicon and chemical dry etching using silicon as a semiconductor substrate has been described as an example. A similar improvement in film thickness uniformity can be expected in the formation and processing of other thin films such as nitride films.

Further, in the example, the case where the semiconductor substrate was brought into close contact with the auxiliary plate was illustrated, but the same effect could be obtained even if the semiconductor substrate was separated from the auxiliary plate if the conditions of the present invention were satisfied.

Third Embodiment A sectional view of a semiconductor device manufacturing apparatus according to the present invention is shown in FIG.

In FIG. 3, a support plate 12 has a semiconductor substrate mounting mechanism 13, which is a claw, as an example of locking the semiconductor substrate 11.
is larger than the semiconductor substrate 11, as shown in FIGS. 4(a) and 4(b). and.

These support plates 12 are arranged to face each other, perpendicular to the exhaust direction, and have an interval (a) equal to or less than the protrusion length (b) of the support plates that the semiconductor substrate 11 has on the outside of the periphery of the support plate holder 10. Arranged. Further, the support plate holder 10 is placed inside a reaction chamber 31 which is a reduced pressure container. Furthermore, a heating device 32 is provided outside the reaction chamber 31 to face the semiconductor substrate 11 and heat the semiconductor substrate 11.
1 is provided with a gas inlet 33 and an exhaust port 34.

The manufacturing equipment like the example mentioned above is a horizontal type (first example)
, vertical type (second embodiment), but in the case of the vertical type, as shown in FIG. The only difference is that a support 51 is required to hold the plate holder, and this is provided. Therefore, the numbers of each part in FIG. 5, which shows the vertical type, are the same as the numbers of each part shown in FIG. 3, except for the support column 51, and a description thereof will be omitted.

〔Effect of the invention〕

According to the present invention, it is possible to form and process a thin film with extremely high uniformity, which can greatly contribute to a significant improvement in the manufacturing yield and performance of semiconductor devices.

[Brief explanation of the drawing]

FIG. 1 is a side view for explaining a first embodiment according to the present invention, FIG. 2 is a side view for explaining a second embodiment according to the present invention, and FIG. 3 is a side view for explaining a second embodiment according to the present invention. FIG. 4 is a cross-sectional view of the manufacturing apparatus of the embodiment, FIG. 4 shows a mounting mechanism of the first embodiment of the present invention, (a) is a front view, (b) is a side view, and FIG. 5 is a second embodiment of the present invention. 6 is a diagram for explaining film thickness uniformity according to the present invention, FIG. 7 is a side view for explaining the conventional example, and FIG. 8 is a manufacturing apparatus for the conventional example. FIG. 2 is a cross-sectional view of the device. 10.20.100...Substrate holder, ]1.21.1
01...Semiconductor substrate, 12.22...Support plate, 13...Mounting mechanism, 23...Strut, 102...Auxiliary plate, 31, 201...Reaction chamber (decompression vessel), 32 .202
...Heating device, 33.203...Gas inlet, 34.204...Exhaust port. Agent Patent Attorney Norihiro Ogo 33: ``rr' Suzuki Entrance 34: Stitching mechanism (Fig. 3) 13: Mounting mechanism/mechanism (Fig. 4): Post 15 (10 x 9 x 1 side) Thick/Central G-family Liao Figure 6

Claims (1)

[Claims] (1) In a semiconductor device manufacturing method that includes a process of forming a thin film on a semiconductor substrate and processing the thin film in a reduced pressure atmosphere, a support plate larger than the semiconductor substrate is placed perpendicular to the exhaust direction, and the distance between the support plates is such that the semiconductor substrate A method for manufacturing a semiconductor device, comprising arranging the semiconductor substrates so as to have a length equal to or less than the protrusion length of the semiconductor substrate support plates provided on the outer side of the periphery, and installing semiconductor substrates between these support plates. (2) A support plate that has a mounting mechanism for a semiconductor substrate and is larger than the semiconductor substrate, and the semiconductor substrate support plate has the support plates facing each other, perpendicular to the exhaust direction, and the distance between the semiconductor substrate and the semiconductor substrate being on the outer side of the periphery thereof. What is claimed is: 1. A semiconductor device manufacturing apparatus comprising: support plate holders arranged to have a protrusion length or less; a vacuum container housing the support plate holders; and a heating device for a semiconductor substrate supported by the support plates.