JPH04159553A - Photosensitive resin composition - Google Patents

Abstract

PURPOSE:To enhance sensitivity and to reduce exposure light by using the photosensitive resin composition comprising a siloxane resin having groups to be allowed to chain polymerize by action of acid and a substance to be allowed to generate acid by exposure to radiation and a sensitizer to be added when needed. CONSTITUTION:This photosensitive resin composition comprises the siloxane resin having groups to be allowed to chain polymerize by action of acid and the substance 1 to be allowed to generate acid by exposure to radiation and the sensitizer to be added when needed, and when it is imagewise exposed to radiation, the substance 1 generates in the exposed parts to cause chain polymerization of the siloxane resin, gelling of the exposed parts and insolubilizing it in a developing solution, and forming a pattern, thus permitting high O2-RIE resistance and sensitivity higher than the conventional ones to be obtained.

Description

Detailed Description of the Invention (Industrial Field of Application) The present invention can be used as a component material for resists used in the manufacture of semiconductor devices, etc., and is sensitive to radiation such as light, electron beams, X-rays, or ion beams. The present invention relates to a novel photosensitive resin composition.

(Prior Art) As LSIs become more highly integrated, submicron order processing technology is becoming necessary. For this reason, for example, LSI
In the etching process during the manufacturing process, a tri-etching technique that allows for high precision and fine processing is adopted.

Here, the tri-etching technique involves covering the substrate to be processed with resist, patterning the resist using light or electron beams, and using the resulting pattern as a mask, reactive gas plasma is applied to the exposed portions of the substrate through the mask. This is a technique for etching. Therefore, the resist used in the tri-etching technique is composed of a material having submicron order resolution and sufficient resistance to reactive gas plasma.

However, as LSIs become more highly integrated, the steps on the substrate to be processed are becoming larger and larger, and patterns with high aspect ratios are being formed on the substrate to be processed. For this reason, there is a tendency for the thickness of the resist layer to be increased in order to flatten the step and to maintain the resist layer as a mask until the end of processing. Therefore, when resist is exposed with light, it is significantly limited by the depth of focus of the exposure optical system, and when it is exposed with an electron beam, it is significantly affected by electron scattering phenomenon, which reduces the resolution of the resist and makes it difficult to make a single image. With resist layers, it is becoming difficult to process substrates as desired.

Therefore, a resist process called a two-layer resist method is being considered as one of the new resist processes. This is a thick polymer layer (hereinafter referred to as a lower layer) for flattening the substrate step.

(usually a layer consisting of polyimide or heat-cured photoresist) and a 02-day IE formed on this lower layer.
This is a resist process using a resistant thin photoresist layer or electron beam resist layer (hereinafter, these layers are referred to as upper layers).

Specifically, the upper layer plays the role of obtaining a high-resolution pattern, and using this upper layer pattern as a mask, the lower layer is patterned by 02-RIE, and the resulting lower layer pattern is used as a mask for dry etching during substrate processing. It is a process of composition that takes on a role.

The upper layer resist has a higher 02-RI than the lower layer resist.
Since it is necessary to have E resistance, it is often composed of a silicone-based photosensitive resin composition. Specifically, a silicone polymer having a group sensitive to light or an electron beam is used alone or in combination with a sensitizer if necessary.

Conventional examples of such photosensitive resin compositions include, for example, poly(phenylsilsesquioxane) or poly(methylsilsesquioxane) in which 3,3'-diazidodiphenylsulfone or barazidobenzoic acid 2-( Some added azide compounds such as dimethylamino)ethyl.

This was sensitive to deep-UV and could be used as a negative resist.

As a type of this type of photosensitive resin composition, for example, the literature
(Journal of Vacuum Science and Technology (J, Vac, Sci,
Technol, ), 84 (1), (1986), p.
, 414) contains partially methacryloylated bo-1no(phenylsilsesquioxane) and 2,6-bis(4
Disclosed is a photosensitive resin comprising 4-methylcyclohexanone. This is said to be useful as an upper layer resist in a two-layer resist method.

(Problems to be Solved by the Invention) However, the conventional photosensitive resin composition disclosed in Document (2) has a phenyl group as a substituent in the siloxane, and in order to increase sensitivity, (1) ...In order to increase the crosslinking density due to nitrene emitted from bisazide, the methacryloyl ratio should be made close to 70%, and ■... It is necessary to add about 15% of bisazide (Fi9 of document ■)
．． This can be understood with the explanation related to 6. ), so
There was a problem in that the silicon content decreased, and as a result, the 02-day IE resistance decreased.

Roughly speaking, this photosensitive resin composition has 9 rays (wavelength: 436 nm).
There was a problem that the sensitivity to m) was as low as 500 mJ/cm2.

In addition, in a bisazide photoresist such as this conventional photosensitive resin composition, the polymer in the exposed area is insolubilized by the main nitrene as the photosensitive agent present in this area decomposes, resulting in buttering. However, at this time, only one or less photosensitizer is decomposed per absorbed photon, so a certain amount of exposure is required to decompose the photosensitizer to the extent necessary to insolubilize the exposed area. . For this reason, there was naturally a limit to the ability to improve sensitivity (reduce the amount of exposure light).

The present invention has been made in view of these points, and therefore, an object of the present invention is to provide a novel photosensitive resin composition that has high 02-RIE resistance and is more sensitive than conventional photosensitive resin compositions.

(Means and effects for solving the problem) In order to achieve this object, the inventor of this application has conducted numerous studies. As a result, first, in order to achieve higher sensitivity, we focused on the use of so-called chain reactions in which one or more reactants can cause one or more elementary cheers.

Here, the chain reaction is commonly used in the field of polymer synthesis chemistry as radical chain polymerization, anionic polymerization, cationic polymerization, etc. However, in consideration of adaptability to photosensitive resin compositions, a configuration in which the polymerization initiator is decomposed by radiation irradiation and a chain reaction occurs is preferable. Therefore, we considered using an acid-generating substance that generates acid upon radiation irradiation as a polymerization initiator.

On the other hand, the Haas resin of the photosensitive resin composition contains a group that is chain-polymerized by the action of the acid emitted from the above-mentioned acid generating substance, and has a high silicon content in order to obtain high 0□-RIEjt properties. Therefore, in the present invention, it was considered to use a siloxane resin containing a group that can be chain-polymerized by the action of an acid.

In addition, it has been considered to add a suitable sensitizer depending on the absorption characteristics of the acid generating substance for exposure light.

Therefore, according to the photosensitive resin composition of the present invention, a siloxane resin containing a group that is chain-polymerized by the action of an acid;
It is characterized by consisting of an acid-generating substance that generates acid upon irradiation with radiation, and a sensitizer that is added as necessary.

According to this configuration, the acid generating substance emits acid in the radiation irradiated portion of the photosensitive resin composition, and this acid acts on the groups of the siloxane resin in the radiation irradiated portion that polymerize in a chain manner due to the action of the acid. Therefore, the radiation-irradiated area becomes polymerized and becomes insoluble in the developer. As a result, pattern formation can be performed.

In general, since a siloxane resin having a high silicon content can be used, the photosensitive resin composition has a high silicon content and exhibits high 02-day IE resistance.

In addition, the exposure amount when irradiating the radiation is i! i
The exposure amount can be small as long as it can generate I.

Therefore, the throughput of the exposure process is improved compared to the conventional method. Incidentally, the chain polymerization reaction in the radiation irradiated portion of the photosensitive resin occurs efficiently due to the heat during baking after exposure.

Here, the siloxane resin (hereinafter sometimes referred to as the siloxane resin according to the present invention) containing a group that can be chain-polymerized by the action of an acid is an epoxidized poly(allylic siloxane resin) represented by the following formula 0. sesquioxane) is preferred. However, R in the formula 0 is hydrogen or a trialkylsilyl group. Further, m and n are values indicating the epoxy ratio of the resin (where m + n = 100%).

The reason why the epoxidized poly(allyl silsesquioxane) shown in (2) is suitable as the silo-based sun resin according to the present invention is as follows.

The reason for No. 1 is that silsesquioxane has a T structure (ladder structure) and therefore has a high silicon content of about 30%.

Moreover, the second reason is as follows. As is well known, epoxides are easily obtained by peracid oxidation of carbon-carbon double bonds. Therefore, as a starting material for obtaining epoxide, poly(
Vinyl silsesquioxane) or poly(allyl silsesquioxane) can be used. From the former, epoxide (A) can be obtained through a reaction as shown in formula 0 below,
From the latter, epoxide (B) can be obtained by the reaction shown in the following formula (1). However, these epoxides (A) or (B)
All of the cationic intermediates formed when the ring is opened with an acid become secondary cations, or the cation at the β-position of silicon is stabilized. This is because it is thought that it is easier to generate (D) from CB) than from CB) (see formula 0 below).

(C) (B) (A) (C) (B) (D) In the epoxidized poly(allyl silsesquioxane) represented by formula 0, when the terminal is not protected, R=)-1, For protection, days are (CH3)5Si, (C2Ha)z
It becomes various trialkylsilyl groups such as Si, (CH3)C(CH3)2Si, etc. The storage stability of the photosensitive resin composition is improved if the terminals are protected than if they are not protected. However, even when the ends are not protected, a practical level of storage stability can be obtained.

Epoxidation of poly(allyl silsesquioxane) can be efficiently carried out, for example, by placing poly(allyl silsesquioxane) in dichloromethane and allowing metachloroperbenzoic acid to act thereon at room temperature. The epoxy ratio at this time can be controlled by the number of molar equivalents of peracid (metachloroperbenzoic acid in this example). However, if the epoxy ratio is low, the sensitivity of the photosensitive resin composition will decrease, and the crosslinking density will decrease, resulting in a decrease in resolution.
The epoxy ratio is 10% or more, that is, the ratio of m and n in formula 0 m
:n is preferably in the range of 90:10 to 0°100.

Furthermore, if the molecular weight of the siloxane resin according to the present invention is too low, problems such as the coating of the photosensitive resin composition will occur, while if it is too high, the sensitivity of the photosensitive resin composition can be increased. Since this may cause problems such as a reduction in resolution, it is better to take these points into account and set the range to an appropriate range. In the example of the siloxane resin represented by the formula (1), it is preferable that the weight average molecular weight is in the range of 2.000 to 20°, ooo.

On the other hand, the acid generating substance, which is another essential component of the photosensitive resin composition of the present invention, is exposed to radiation with an acid strong enough to initiate polymerization of the groups that are polymerized by the action of the acid in the siloxane resin. Various materials can be used as long as they occur as a result of this. However, it must be compatible with the siloxane resin according to the present invention, and must also be soluble in the solvent used to prepare the coating solution for spin coding.

Specifically, for example, diphenyl represented by the following formula 0 (
4-t~butylphenyl) sulfonium p-toluenesulfonate, diphenyl (4-t-
Various triarylsulfonium salts such as butylphenyl)sulfonium trifluoromethanesulfonate, bis(4-1-butylphenyl)iodonium p-1-luninsulfonate represented by the following formula 0, bis(4- Mention may be made of various diaryliodonium salts such as 1-butylphenyl)iodonium trifluoromethanesulfonate. Salts generally do not have high compatibility, but compatibility is increased by bonding an alkyl group.

Further, α-sulfonyloxyketones such as hengeyne arylsulfonate and hengeyne alkylsulfonate can also be used as acid generating substances in the present invention, and specifically, for example, hengeyne p-toluenesulfonate represented by the following formula 0, Examples include hendiintrifluoromethanesulfonate represented by the following formula 0.

In addition, polyhalogen compounds can also be used as acid generators in this invention. Specifically, carbon tetrabromide (CBr, )
, trihaloacetamide such as trichloroacetamide (Cβ3CCONH2)W, and aromatic compounds having a trihalomethyl group. Here, as specific examples of aromatic compounds having a trihalomethyl group, α, α shown in the following formula 0,
, α.

α', α', α'-hexachloro-p-xylene, 2,4-dichlorohencytrichloride represented by the following formula 0,
Tribromoquinaldine represented by the following formula 0, 2,4.6-t-lis(trichloromethyl)- represented by the following formula 0
3-triazine, 2-phenyl-4 represented by the following formula 0
, 6-bis(trichloromethyl)-5-triazine, 2-methoxyphenyl-4,6-bis(trichloromethyl>-5-r-riazine represented by the following formula 0), the following [phase]
2-styryl-4,6-bis(trichloromethyl)-3-triazine represented by, 2-(4
-methoxystyryl)-4,6-bis(trichloromethyl)-3-triazine, 2-(4-
Examples include dimethylaminostyryl)-4,6-bis(trichloromethyl)-8-triazine.

C(CH3)3 CCj! 3N(C113)2 In this invention, the acid generating substance exhibits the desired catalytic function also in image quantity. If the amount is too large, problems such as acid-generating substances precipitating in the film during film formation of the photosensitive resin composition may occur. From these points, the content ratio of the acid generating substance to the siloxane resin according to the present invention is 0.01.
It is preferable to set the range to 20%.

Furthermore, the photosensitive resin composition of the present invention may contain a sensitizer depending on the absorption characteristics of the acid generating substance with respect to exposure light. As the sensitizer, polycyclic condensed aromatic compounds are suitable. For example, the acid generating substance shown by the above-mentioned formula 0 to 0 exhibits absorption in the deep-UV region, but has extremely low or no sensitivity to the 9-ray. Therefore, in this case, for example, by containing perylene represented by the following formula 0, a photosensitive resin composition that is highly sensitive even to 9-rays can be obtained. Of course, the 9-ray sensitizer is not limited to perylene, and other suitable sensitizers may be used.

Furthermore, in order to increase the sensitivity to i-rays (wavelength 365 nm), for example, Michler's ketone or the like may be added.

(Example) Examples of the photosensitive resin composition of the present invention will be described below. By the way, the numerical conditions such as the materials used, the amount of materials used, processing time, temperature, film thickness, etc., described in the following explanation are as follows:
This is merely a preferred example within the scope of this invention. Therefore, it should be understood that the present invention is not limited only to these conditions.

Eboxyhibori AllylsilsesquioxaneIntroduction, ■
An epoxidized poly(allyl silsesquioxane) represented by the formula 0 in which R7 and R2 are both H (hydrogen) is synthesized as follows.

First, poly(allyl silsesquioxane) having hydrogen terminals, which is a starting material for obtaining this epoxidized poly(allyl silsesquioxane), was disclosed in Japanese Unexamined Patent Publication No. 62-283128 of the applicant. Synthesized by the disclosed method. Here, poly(allyl silsesquioxane) having a weight average molecular weight Mw of 14,700 was synthesized.

Next, 9.8q of this poly(allylsilsesquioxane)
! Dissolve in 200 mρ of dry dichloromethane (distilled from CaH2).

Next, 8.79 ml of metachloroperbenzoic acid is added little by little to this solution while stirring the solution at room temperature. After adding the entire amount of metachlorobenzoin M, the mixture was stirred for 4 hours.
Thereafter, dichloromethane is distilled off from this solution under reduced pressure at room temperature until the total amount of the solution becomes about 100 mβ.

Next, this solution! Pour into 500mρ methanol. The precipitate formed at this time is collected by filtration. This precipitation is separately 1
This is redissolved in the prepared 100 mA of dichloroethane and then poured back into the 500 ml of methanol mentioned above.

Next, the filtered product was washed several times with 50 ml of methanol and then vacuum-dried overnight to obtain 8.39 g of epoxidized poly(allyl silsesquioxane) of Synthesis Example 1.

The epoxy ratio (n in formula 0) of this product is approximately 50 from the integrated intensity ratio of the vinyl proton at 65-6 and the epoxide methylene proton at around 62.7 in the NMR spectrum.
It was found that %. When the yield was calculated based on this, it was found to be 78%.

Further, when the weight average molecular weight of this product was measured by GPC (gel permeation chromatography), it was found to be 16.000.

Epoxy Polysilsesquioxane QjU1 Example 2 - Next, we prepared an epoxidized poly(allylsilsesquioxane) represented by the formula (■) in which both R1 and R2 in the formula
Epoxidized poly(allyl silsesquioxane), which is (CH3)3, is synthesized as follows.

In this case, 9°89 of the poly(allylsilsesquioxane) with hydrogen terminals used as the starting material in Synthesis Example 1 was prepared, and this! Dissolve in 200 mff of toluene and then add 10 mβ of chlorotrimethylsilane to this solution.

Next, while stirring this solution in a water bath, 10 ml of triethylamine was added dropwise into the solution and the mixture was stirred for 12 hours.

Next, the reaction solution is filtered to remove (CzHa)3N-HCQ, and then the solvent is distilled off under reduced pressure until the total amount of the filtrate becomes about 50 mβ, and this is roughly filtered.

Next, the filtrate is poured into 500 mρ methanol to form a precipitate.

Next, the precipitate was collected by filtration, washed several times with 50 ml of methanol, and then vacuum-dried overnight to obtain poly(allylsilsesquioxane) with -3i (CH3) 3 terminals represented by the following formula 0. It will be done. However, p in the formula is the degree of polymerization.

Next, add this poly(allylsilsesquioxane) to 2
Dissolve oOmI2 in dry dichloromethane (distilled from CaH2).

After that, epoxidation is performed by the same procedure as in Synthesis Example 1. As a result, 6.89% of the epoxidized poly(allyl silsesquioxane) of Synthesis Example 2 is obtained.

The epoxy ratio of this product was determined in the same manner as in Synthesis Example 1, and was found to be approximately 10%.

It was also found that the yield was about 75%.

Further, it was found that the average weight molecular weight Mw was 15,500.

Epoxidized poly(allyl silsesquioxane) obtained in Synthesis Example 1, J! fJchiR' = R2 = H, Mw = 16.
000 and epoxidized poly(
Allylsilsesquioxane) 1. og and 10 m9 of diphenyl(4-t-butylphenyl)sulfonium trifluoromethanesulfonate (formula 0 above) as an acid generator in this case are dissolved in 10 m1 of chlorohensen,
Next, this solution is filtered through a Teflon filter having pores of 0.2 um in diameter to prepare a coating solution of the photosensitive resin composition of Example 1.

Next, this coating solution was applied using a spin coating method with an M diameter of 3 inches (
1 inch is about 2.54 cm), and then this sample was prebaked at a temperature of 80° C. for 1 minute using a hot plate to coat the photosensitive resin composition of Example 1 on the silicon substrate. A skin III with a thickness of 0.2 um is formed.

Next, a chrome mask having a test pattern is brought into close contact with this sample, and then exposed to light using a Xe-Hg lamp, and then baked for 1 minute at a temperature of 120° C. using a hot plate. The above exposure was performed using a Canon PLA501 aligner equipped with a CM250 cold mirror. Therefore, the light beam mainly has a wavelength of 220 to 280 nm.

The sample that has been baked after exposure is developed for 30 seconds using a mixed solution of methyl isobutyl ketone and isoprodol alcohol (1:1 in volume ratio).

Next, lyse for 1 minute using isopropyl alcohol.

A plurality of samples are prepared according to the above procedure except that the exposure amount is changed, and various resist patterns with different exposure amounts are obtained.

When each resist pattern was observed using an MSEM (scanning electron microscope), it was found that a 0.5 um line and space pattern was resolved in the sample exposed at an exposure dose of 20 mJ/cm2.

In the configuration of Example 1, the acid generating substance is 2-phenyl-
4,6-bis(trichloromethyl)-S-triazine (
The above type 0. ) A coating solution of the photosensitive resin composition of Example 2 was prepared in the same manner as in Example 1 except that the amount was changed to 0.109.

Next, using this, a patterning experiment is conducted in the same manner as the patterning experiment procedure of Example 1.

As a result, it was found that a 0.5 um line-and-space pattern was resolved in the sample exposed with an exposure dose of 50 mJ/cm2.

Epoxidized poly(allylsilsesquioxane) obtained in Synthesis Example 2, namely R' = R2 = Si (CH3) 3 ,
Mw = 15.500 and epoxy ratio 10%
Epoxidized poly(allylsilsesquioxane) 1.0
9 and 20 mL of diphenyl(4-1-butylphenyl)sulfonium trifluoromethanesulfonate (used in Example 1) as an acid generator were dissolved in ]Omρ chlorohensen, and then this solution was .2u
A coating solution of the photosensitive resin composition of Example 3 is prepared by filtering through a Teflon filter having pores of m.

Next, using this, a buttering experiment is conducted in the same manner as the buttering experiment procedure of Example 1.

As a result, it was found that a 0.5 um line-and-space pattern was resolved in the sample exposed with an exposure dose of 60 mJ/cm2.

K Client A 1.09% of the epoxidized poly(allylsilsesquioxane obtained in Synthesis Example 2) and 2-styryl-4, 2-styryl-4, as an acid generator.
20 m9 of 6-bis(trichloromethyl)-S-t-lyazine (of the above [phase] formula) and 10 m9 of perylene (of the above formula 0) as a sensitizer were mixed with 10 mρ chlorochlorohensen, and then to this solution 18 diameter 0.2u
A coating solution of the photosensitive resin composition of Example 4 is prepared by filtering through a Teflon filter having pores of m.

Next, a buttering experiment was conducted in the same manner as in Example 1 except that the exposure light was changed to 9-line (using an ultra-high pressure mercury lamp).

As a result, it was found that a 0.5 um line and space pattern was resolved in the sample exposed with an exposure dose of 30 mJ/cm2.

As a comparative example of Example 4, a coating solution of a photosensitive resin composition of the comparative example was prepared in exactly the same manner as in Example 4 except that perylene was not added, and then the same procedure as in Example 4 was carried out. Perform a buttering experiment using 9 wires.

As a result, the photosensitive resin composition of the comparative example had an exposure jl! I
It was found that a resist pattern could be formed even at J/cm2, but no practical sensitivity could be obtained.

Although Examples of the photosensitive resin composition of the present invention have been described above, the present invention is not limited to the above-mentioned Examples.

In the above example, the siloxane resin containing a group that can be chain-polymerized by the action of an acid was an epoxidized poly(allyl silsesquioxane) represented by the formula (2), but the epoxy group was aziridine. Siloxane resins (the epoxy group in the formula ■ has oxygen or NH), siloxane resins in which the epoxy group is thiirane (the epoxy group in the formula ■ has the oxygen or S), etc. can also be used as examples. Similar effects can be expected.

(Effects of the Invention) As is clear from the above explanation, according to the photosensitive resin composition of the present invention, when the photosensitive resin composition is selectively irradiated with radiation, the acid generating substance emits acid at the radiation irradiated portion, Since this acid acts on the siloxane resin containing groups that are chain-polymerized by the action of the acid, the irradiated area gels (polymerizes) and becomes insoluble in the developer, allowing pattern formation. Moreover, the amount of exposure at this time is sufficient as long as it can generate acid from the acid-generating substance in the radiation-irradiated portion of the photosensitive resin composition, and the chain polymerization requires less heat during baking after exposure. You can use it to move forward.

Therefore, the throughput of the photolithography process is improved compared to the conventional method. In order to improve the productivity of semiconductor devices, etc., it is important to shorten the time required for each process, and considering that it is especially effective to shorten the time required for the photolithography process, which is the most repeated process, this invention was developed. It turns out that the photosensitive resin compositions are very useful.

In addition, since the siloxane resin has a high silicon content of about 30%, the photosensitive resin composition of the present invention has a high silicon content and exhibits high 02-RIE resistance. A good pattern can be obtained.

Furthermore, by adding a sensitizer as necessary, the photosensitive resin composition exhibits practical sensitivity even to, for example, 9 lines, so that a photosensitive resin composition with excellent versatility can be obtained.

Patent applicant: Oki Electric Industry Co., Ltd.

Claims (7)

[Claims] (1) Photosensitivity characterized by consisting of a siloxane resin containing a group that polymerizes in a chain manner by the action of an acid, an acid-generating substance that generates an acid when irradiated with radiation, and a sensitizer added as necessary. Resin composition. (2) The photosensitive resin composition according to claim 1, wherein the siloxane resin is an epoxidized poly(allyl silsesquioxane) represented by the following formula [1]. (However, R in the formula [1] is hydrogen or a trialkylsilyl group, and m and n are values indicating the epoxy ratio of the resin (however, m +
n=100%. )). ▲There are mathematical formulas, chemical formulas, tables, etc.▼…[1] (3) The photosensitive resin composition according to claim 2, wherein the epoxidized poly(allyl silsesquioxane) is
A photosensitive resin composition characterized in that m:n is in the range of 90:10 to 0:100 and the weight average molecular weight Mw is in the range of 2,000 to 200,000. (4) In the photosensitive resin composition according to claim 1, the acid generating substance is a substance selected from diarylsulfonium salts, diaryliodonium salts, α-sulfonyloxyketones, and polyhalogen compounds. A photosensitive resin composition characterized by: (5) The photosensitive resin composition according to claim 1 or 4, wherein the content of the acid generating substance with respect to the siloxane resin is in the range of 0.01 to 20% by weight. thing. (6) The photosensitive resin composition according to claim 1, wherein the sensitizer is a polycyclic condensed aromatic compound. (7) The photosensitive resin composition according to claim 6, wherein the sensitizer is perylene.